MURS220T3G

## MURS220T3G, SURS8220T3G 

## Surface Mount Ultrafast Power Rectifiers 

Ideally suited for high voltage, high frequency rectification, or as free wheeling and protection diodes in surface mount applications where compact size and weight are critical to the system. 

## **Features** 

- Small Compact Surface Mountable Package with J−Bend Leads 

- Rectangular Package for Automated Handling 

## **http://onsemi.com** 

**ULTRAFAST RECTIFIERS 2 AMPERES 200 VOLTS** 

- High Temperature Glass Passivated Junction 

- Low Forward Voltage Drop 

   - (0.77 Volts Max @ 2.0 A, TJ = 150  C) 

- AEC−Q101 Qualified and PPAP Capable 

- SURS8 Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements 

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SMB<br>CASE 403A<br>**----- End of picture text -----**<br>


## **Mechanical Characteristics:** 

- Case: Epoxy, Molded 

## **MARKING DIAGRAM** 

- Weight: 95 mg (approximately) 

- Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable 

- Lead and Mounting Surface Temperature for Soldering Purposes: 260  C Max. for 10 Seconds 

- Shipped in 12 mm Tape and Reel, 2500 units per reel 

- Polarity: Polarity Band Indicates Cathode Lead 

- Marking: U2D 

- These Packages are Pb-Free* 

- ESD Ratings: 

   - Machine Model = C (> 400 V) 

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AYWW<br>U2D<br>U2D = Specific Device Code<br>A = Assembly Location<br>Y = Year<br>WW = Work Week<br>= Pb-Free Package<br>**----- End of picture text -----**<br>


(Note: Microdot may be in either location) 

- Human Body Model = 3B (> 8 kV) 

**ORDERING INFORMATION** 

**Device Package Shipping**[†] MURS220T3G SMB 2,500 / (Pb−Free) Tape & Reel SURS8220T3G SMB 2,500 / (Pb−Free) Tape & Reel ~~fF~~ †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. 

> *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 

Publication Order Number: **MURS220T3/D** 

**1** 

 Semiconductor Components Industries, LLC, 2012 **January, 2012 − Rev. 3** 

**MURS220T3G, SURS8220T3G** 

## **MAXIMUM RATINGS** 

|**MAXIMUM RATINGS**||||
|---|---|---|---|
|**Rating**|**Symbol**|**Value**|**Unit**|
|Peak Repetitive Reverse Voltage<br>Working Peak Reverse Voltage<br>DC Blocking Voltage|VRRM<br>VRWM<br>VR|200|V|
|Average Rectified Forward Current|IF(AV)|2.0 @ TL= 145C|A|
|Non−Repetitive Peak Surge Current<br>(Surge applied at rated load conditions halfwave, single phase, 60 Hz)|IFSM|40|A|
|Operating Junction Temperature Range|TJ|−65 to +175|C|



Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 

## **THERMAL CHARACTERISTICS** 

|**THERMAL CHARACTERISTICS**||||
|---|---|---|---|
|**Characteristic**|**Symbol**|**Value**|**Unit**|
|Thermal Resistance, Junction to Lead<br>(TL= 25C)|RJL|13|C/W|



## **ELECTRICAL CHARACTERISTICS** 

|**ELECTRICAL CHARACTERISTICS**||||
|---|---|---|---|
|**Characteristic**|**Symbol**|**Value**|**Unit**|
|Maximum Instantaneous Forward Voltage (Note 1)<br>(IF= 2.0 A, TJ= 25C)<br>(IF= 2.0 A, TJ= 150C)|vF|0.95<br>0.77|Volts|
|Maximum Instantaneous Reverse Current (Note 1)<br>(Rated dc Voltage, TJ= 25C)<br>(Rated dc Voltage, TJ= 150C)|IR|2.0<br>50|�A|
|Maximum Reverse Recovery Time<br>(IF= 1.0 A, di/dt = 50 A/�s)<br>(IF= 0.5 A, iR= 1.0 A, IRto 0.25 A)|trr|35<br>25|ns|
|Maximum Forward Recovery Time<br>(IF= 1.0 A, di/dt = 100 A/�s, Rec. to 1.0 V)|tfr|25|ns|



1. Pulse Test: Pulse Width = 300 � s, Duty Cycle  2.0%. 

**http://onsemi.com** 

**2** 

## **MURS220T3G, SURS8220T3G** 

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10 10<br>7.0 7.0<br>5.0 5.0<br>175  C<br>3.0 3.0<br>100  C TC = 175  C<br>2.0 2.0<br>TC = 25  C TC = 100  C<br>1.0 1.0<br>TC = 25  C<br>0.7 0.7<br>0.5 0.5<br>0.3 0.3<br>0.2 0.2<br>0.1 0.1<br>0.07 0.07<br>0.05 0.05<br>0.03 0.03<br>0.02 0.02<br>0.01 0.01<br>0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3<br>VF, INSTANTANEOUS VOLTAGE (VOLTS) VF, INSTANTANEOUS VOLTAGE (VOLTS)<br>Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage<br>80 100<br>4020 TJ = 175  C TJ = 175  C<br>8.0<br>10<br>4.0<br>2.0<br>0.8 TJ = 100  C TJ = 100  C<br>0.4<br>1.0<br>0.2<br>0.080.040.02 TJ = 25  C 0.1 TJ = 25  C<br>0.008<br>0.004<br>0.002<br>0.01<br>0 20 40 60 80 100 120 140 160 180 200 0 20 40 60 80 100 120 140 160 180 200<br>VR, REVERSE VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS)<br>, INSTANTANEOUS FORWARD CURRENT (AMPS) , INSTANTANEOUS FORWARD CURRENT (AMPS)<br>IF IF<br>�<br>�<br>, REVERSE CURRENT (   A)<br>IR<br>IR, REVERSE CURRENT (   A)<br>**----- End of picture text -----**<br>


**Figure 3. Typical Reverse Current*** 

**Figure 4. Maximum Reverse Current** 

* The curves shown are typical for the highest voltage device in the voltage grouping. Typical reverse current for lower voltage selections can be estimated from these same curves if applied VR is sufficiently below rated VR. 

**http://onsemi.com** 

**3** 

**MURS220T3G, SURS8220T3G** 

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50<br>45<br>NOTE: TYPICAL<br>40<br>CAPACITANCE AT<br>35 0 V = 45 pF<br>30<br>25<br>20<br>15<br>10<br>5.0<br>0<br>0 10 20 30 40 50 60 70 80 90 100<br>VR, REVERSE VOLTAGE (VOLTS)<br>C, CAPACITANCE (pF)<br>**----- End of picture text -----**<br>


**Figure 5. Typical Capacitance** 

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10<br>RATED VOLTAGE APPLIED<br>9.0<br>R�JL = 13  C/W<br>8.0 TJ = 175  C<br>7.0<br>6.0<br>5.0<br>4.0<br>dc<br>3.0<br>2.0<br>1.0 SQUARE WAVE<br>0<br>80 90 100 110 120 130 140 150 160 170 180<br>TC, CASE TEMPERATURE (  C)<br>, AVERAGE FORWARD CURRENT (AMPS)<br>IF(AV)<br>**----- End of picture text -----**<br>


**Figure 6. Current Derating, Case** 

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5.0<br>T J  = 175  C<br>4.0<br>3.0<br>2.0 dc<br>SQUARE WAVE<br>1.0<br>0<br>0 0.5 1.0 1.5 2.0 2.5<br>IF(AV), AVERAGE FORWARD CURRENT (AMPS)<br>, AVERAGE POWER DISSIPATION (WATTS)<br>PF(AV)<br>**----- End of picture text -----**<br>


**Figure 7. Power Dissipation** 

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**4** 

**MURS220T3G, SURS8220T3G** 

## **PACKAGE DIMENSIONS** 

**SMB** CASE 403A−03 ISSUE H 

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HE<br>NOTES:<br>1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.<br>E 2. CONTROLLING DIMENSION: INCH.<br>3. D DIMENSION SHALL BE MEASURED WITHIN DIMENSION P.<br>MILLIMETERS INCHES<br>DIM MIN NOM MAX MIN NOM MAX<br>A 1.90 2.20 2.28 0.075 0.087 0.090<br>r > b D ——— A1 0.05 0.10 0.19 0.002 0.004 0.007<br>b 1.96 2.03 2.20 0.077 0.080 0.087<br>c 0.15 0.23 0.31 0.006 0.009 0.012<br>D 3.30 3.56 3.95 0.130 0.140 0.156<br>E 4.06 4.32 4.60 0.160 0.170 0.181<br>IW. POLARITY INDICATOROPTIONAL AS NEEDED H E 5.21 5.44 5.60 0.205 0.214 0.220<br>L 0.76 1.02 1.60 0.030 0.040 0.063<br>L1 0.51 REF 0.020 REF<br>A<br>A1<br>ee L L1 c [oo] O SS<br>SOLDERING FOOTPRINT*<br>2.261<br>0.089<br>P|<br>L 2.743<br>0.108<br>|<br>2.159<br>0.085 mm<br>SCALE 8:1<br>rs (—) inches<br>*For additional information on our Pb−Free strategy and soldering<br>details, please download the ON Semiconductor Soldering and<br>Mounting Techniques Reference Manual, SOLDERRM/D.<br>**----- End of picture text -----**<br>


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**MURS220T3/D** 

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