MURS105T3G
Fast / Ultrafast Diode, 50 V, 1 A, Single, 875 mV, 35 ns, 40 A
- Manufacturer: ONSEMI
- Product type: Fast & Ultrafast Recovery Rectifier Diodes
- Repetitive Reverse Voltage Vrrm Max:50V; Forward Current If(AV):1A; Diode Configuration:Single; Forward Voltage VF Max:875mV; Reverse Recovery Time trr Max:35ns; Forward Surge Current Ifsm M
- SVHC: Lead (25-Jun-2025)
- No. of Pins: 2 Pin
- Product Range: MURS1
- Qualification: AEC-Q101
- Diode Case Style: DO-214AA (SMB)
- Diode Configuration: Single
- Forward Voltage Max: 875mV
- Forward Surge Current: 40A
- Reverse Recovery Time: 35ns
- Average Forward Current: 1A
- Operating Temperature Max: 175°C
- Repetitive Peak Reverse Voltage: 50V
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 0.137 € |
| Current stock | 1000+ |
| Lead time | 30 days |
## MURS120T3G Series, SURS8120T3G Series, NRVUS120VT3G Series ## Surface Mount Ultrafast Power Rectifiers **www.onsemi.com** **MURS105T3G, MURS110T3G, MURS115T3G, MURS120T3G, MURS140T3G, MURS160T3G, SURS8105T3G, SURS8110T3G, SURS8115T3G, SURS8120T3G, SURS8140T3G, SURS8160T3G, NRVUS110VT3G, NRVUS120VT3G, NRVUS160VT3G** Ideally suited for high voltage, high frequency rectification, or as free wheeling and protection diodes in surface mount applications where compact size and weight are critical to the system. ## **Features** - Small Compact Surface Mountable Package with J−Bend Leads - Rectangular Package for Automated Handling - High Temperature Glass Passivated Junction - Low Forward Voltage Drop (0.71 to 1.05 V Max @ 1.0 A, TJ = 150°C) - NRVUS and SURS8 Prefixes for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable - These Devices are Pb−Free and are RoHS Compliant ## **Mechanical Characteristics:** - Case: Epoxy, Molded - Weight: 95 mg (Approximately) - Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable - Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds - Polarity: Polarity Band Indicates Cathode Lead **ULTRAFAST RECTIFIERS 1.0 AMPERE, 50−600 VOLTS** **==> picture [44 x 16] intentionally omitted <==** **----- Start of picture text -----**<br> SMB<br>CASE 403A<br>**----- End of picture text -----**<br> **==> picture [104 x 135] intentionally omitted <==** **----- Start of picture text -----**<br> MARKING DIAGRAM<br>AYWW<br>U1x<br>‘i<br>A = Assembly Location*<br>Y = Year<br>WW = Work Week<br>U1 = Device Code<br>x = A, B, C, D, G, or J<br>= Pb−Free Package<br>**----- End of picture text -----**<br> **==> picture [147 x 8] intentionally omitted <==** **----- Start of picture text -----**<br> (Note: Microdot may be in either location)<br>**----- End of picture text -----**<br> * The Assembly Location code (A) is front side optional. In cases where the Assembly Location is stamped in the package bottom (molding ejecter pin), the front side assembly code may be blank. ## **ORDERING INFORMATION** See detailed ordering and shipping information in the table on page 2 of this data sheet. - ESD Rating: - ♦ Human Body Model = 3B (> 8 kV) - ♦ Machine Model = C (> 400 V) ## **DEVICE MARKING INFORMATION** See general marking information in the device marking table on page 2 of this data sheet. Publication Order Number: **MURS120T3/D** **1** © Semiconductor Components Industries, LLC, 2017 **April, 2019 − Rev. 16** **MURS120T3G Series, SURS8120T3G Series, NRVUS120VT3G Series** ## **MAXIMUM RATINGS** |**MAXIMUM RATINGS**||||||||| |---|---|---|---|---|---|---|---|---| |**Rating**|**Symbol**|**MURS/SURS8/NRVUS**||||||**Unit**| |||**105T3**|**110T3**|**115T3**|**120T3**|**140T3**|**160T3**|| |Peak Repetitive Reverse Voltage<br>Working Peak Reverse Voltage<br>DC Blocking Voltage|VRRM<br>VRWM<br>VR|50|100|150|200|400|600|V| |Average Rectified Forward Current|IF(AV)|1.0 @ TL= 155°C<br>2.0 @ TL= 145°C||||1.0 @ TL= 150°C<br>2.0 @ TL= 125°C||A| |Non−Repetitive Peak Surge Current, (Surge applied<br>at rated load conditions halfwave, single phase, 60 Hz)|IFSM|40||||35||A| |Operating Junction Temperature|TJ|�65 to +175||||||°C| Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ## **THERMAL CHARACTERISTICS** |**THERMAL CHARACTERISTICS**||||||||| |---|---|---|---|---|---|---|---|---| |**Rating**|**Symbol**|**MURS/SURS8/NRVUS**||||||**Unit**| |||**105T3**|**110T3**|**115T3**|**120T3**|**140T3**|**160T3**|| |Thermal Resistance<br>Junction−to−Lead (TL= 25°C)|R�JL|13||||||°C/W| |**ELECTRICAL CHARACTERISTICS**(TA= 25°C, Unless otherwise noted)||||||||| |Maximum Instantaneous Forward Voltage (Note 1)<br>(iF= 1.0 A, TJ= 25°C)<br>(iF= 1.0 A, TJ= 150°C)|vF|0.875<br>0.71||||1.25<br>1.05||V| |Maximum Instantaneous Reverse Current (Note 1)<br>(Rated DC Voltage, TJ= 25°C)<br>(Rated DC Voltage, TJ= 150°C)|iR|2.0<br>50||||5.0<br>150||�A| |Maximum Reverse Recovery Time<br>(iF= 1.0 A, di/dt = 50 A/�s, VR= 30 V)<br>(iF= 0.5 A, iR= 1.0 A, IRto 0.25 A)|trr|35<br>25||||75<br>50||ns| |Maximum Forward Recovery Time<br>(iF= 1.0 A, di/dt = 100 A/�s, Rec. to 1.0 V)|tfr|25||||50||ns| |Typical Peak Reverse Recovery Current<br>(IF= 1.0 A, di/dt = 50 A/�s)|IRM|0.75||||1.60||A| 1. Pulse Test: Pulse Width = 300 � s, Duty Cycle � 2.0%. ## **DEVICE MARKING AND ORDERING INFORMATION** |**Device**|**Marking**|**Package**|**Shipping**†| |---|---|---|---| |MURS105T3G,<br>SURS8105T3G*|U1A|SMB<br>(Pb−Free)|2,500 Units / Tape & Reel| |MURS110T3G, NRVUS110VT3G*<br>SURS8110T3G*|U1B|SMB<br>(Pb−Free)|2,500 Units / Tape & Reel| |MURS115T3G,<br>SURS8115T3G*|U1C|SMB<br>(Pb−Free)|2,500 Units / Tape & Reel| |MURS120T3G, NRVUS120VT3G*<br>SURS8120T3G*|U1D|SMB<br>(Pb−Free)|2,500 Units / Tape & Reel| |MURS140T3G,<br>SURS8140T3G*|U1G|SMB<br>(Pb−Free)|2,500 Units / Tape & Reel| |MURS160T3G, NRVUS160VT3G*<br>SURS8160T3G*|U1J|SMB<br>(Pb−Free)|2,500 Units / Tape & Reel| †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *NRVUS and SURS8 Prefixes for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable. **www.onsemi.com** **2** **MURS120T3G Series, SURS8120T3G Series, NRVUS120VT3G Series** ## **MURS105T3G, MURS110T3G, MURS115T3G, MURS120T3G, SURS8105T3G, SURS8110T3G, SURS8115T3G, SURS8120T3G, NRVUS110VT3G, NRVUS120VT3G** **==> picture [492 x 616] intentionally omitted <==** **----- Start of picture text -----**<br> 10<br>80<br>7.0 4020 TJ = 175°C<br>8.0<br>5.0 4.0<br>2.0<br>0.8 TJ = 100°C<br>3.0 0.4<br>175°C 100°C 0.2<br>2.0 0.08<br>TC = 25°C 0.040.02 TJ = 25°C<br>0.008<br>1.0<br>0.004<br>0.002<br>0.7<br>0 20 40 60 80 100 120 140 160 180 200<br>0.5 VR, REVERSE VOLTAGE (VOLTS)<br>Figure 2. Typical Reverse Current*<br>0.3 *The curves shown are typical for the highest voltage device in the<br>voltage grouping. Typical reverse current for lower voltage selections<br>0.2 can be estimated from these same curves if applied VR is sufficiently<br>below rated VR.<br>50<br>0.1<br>45<br>0.07 40 NOTE: TYPICAL<br>CAPACITANCE AT<br>0.05 35 0 V = 45 pF<br>30<br>25<br>0.03<br>20<br>0.02<br>15<br>10<br>0.01 5.0<br>0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3<br>0<br>vF, INSTANTANEOUS VOLTAGE (VOLTS) 0 10 20 30 40 50 60 70 80 90 100<br>Figure 1. Typical Forward Voltage VR, REVERSE VOLTAGE (VOLTS)<br>Figure 3. Typical Capacitance<br>10 5.0<br>9.0 RATED VOLTAGE APPLIEDR�JC = 13°C/W T J = 175°C<br>8.0 TJ = 175 ° C 4.0 5.0<br>7.0 I<br>6.0 3.0 (CAPACITANCE�LOAD) I PK � 20 10<br>AV<br>5.0<br>4.0 2.0 DC<br>DC<br>3.0<br>SQUARE WAVE<br>2.0 1.0<br>1.0 SQUARE WAVE<br>0 0<br>80 90 100 110 120 130 140 150 160 170 180 0 0.5 1.0 1.5 2.0 2.5<br>TC, CASE TEMPERATURE (°C) IF(AV), AVERAGE FORWARD CURRENT (AMPS)<br>�<br>, REVERSE CURRENT ( A)<br>IR<br>, INSTANTANEOUS FORWARD CURRENT (AMPS)<br>iF<br>C, CAPACITANCE (pF)<br>, AVERAGE FORWARD CURRENT (AMPS) , AVERAGE POWER DISSIPATION (WATTS)<br>IF(AV) PF(AV)<br>**----- End of picture text -----**<br> **Figure 4. Current Derating, Case** **Figure 5. Power Dissipation** **www.onsemi.com** **3** **MURS120T3G Series, SURS8120T3G Series, NRVUS120VT3G Series** ## **MURS140T3G, MURS160T3G, SURS8140T3G, SURS8160T3G, NRVUS160VT3G** **==> picture [490 x 411] intentionally omitted <==** **----- Start of picture text -----**<br> 10 400<br>200<br>7.0 80 TJ = 175°C<br>175°C 40<br>20<br>5.0<br>100°C 8.0<br>4.02.0 TJ = 100°C<br>3.0<br>TC = 25°C 0.8<br>2.0 0.4<br>0.2<br>0.08 TJ = 25°C<br>0.04<br>1.0 0.02<br>0.008<br>0.7 0.004<br>0 100 200 300 400 500 600 700<br>0.5 VR, REVERSE VOLTAGE (VOLTS)<br>Figure 7. Typical Reverse Current*<br>0.3 *The curves shown are typical for the highest voltage device in the<br>voltage grouping. Typical reverse current for lower voltage selections<br>0.2 can be estimated from these same curves if applied VR is sufficiently<br>below rated VR.<br>25<br>0.1<br>0.07 20 NOTE: TYPICAL<br>CAPACITANCE AT<br>0.05 0 V = 24 pF<br>15<br>0.03<br>10<br>0.02<br>5.0<br>0.01<br>0.3 0.5 0.7 0.9 1.1 1.3 1.5 1.7 1.9 2.1 2.3<br>0<br>vF, INSTANTANEOUS VOLTAGE (VOLTS) 0 4.0 8.0 12 16 20 24 28 32 36 40<br>VR, REVERSE VOLTAGE (VOLTS)<br>�<br>, REVERSE CURRENT ( A)<br>IR<br>i , INSTANTANEOUS FORWARD CURRENT (AMPS)F<br>C, CAPACITANCE (pF)<br>**----- End of picture text -----**<br> **Figure 6. Typical Forward Voltage** **Figure 8. Typical Capacitance** **==> picture [492 x 176] intentionally omitted <==** **----- Start of picture text -----**<br> 10 5.0<br>RATED VOLTAGE APPLIED (CAPACITANCE LOAD) 10 5.0<br>9.0<br>8.0 R�TJCJ = 175 = 13° ° C/WC 4.0 IIPKAV � 20 SQUARE WAVE<br>7.0<br>6.0 3.0<br>DC<br>5.0 T J = 175°C<br>4.0 2.0<br>DC<br>3.0<br>2.0 1.0<br>1.0 SQUARE WAVE<br>0 0<br>0 20 40 60 80 100 120 140 160 180 200 0 0.5 1.0 1.5 2.0 2.5<br>TC, CASE TEMPERATURE (°C) IF(AV), AVERAGE FORWARD CURRENT (AMPS)<br>, AVERAGE FORWARD CURRENT (AMPS) , AVERAGE POWER DISSIPATION (WATTS)<br>IF(AV) PF(AV)<br>**----- End of picture text -----**<br> **Figure 9. Current Derating, Case** **Figure 10. Power Dissipation** **www.onsemi.com** **4** MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** **SMB** CASE 403A−03 ISSUE J DATE 19 JUL 2012 **==> picture [479 x 403] intentionally omitted <==** **----- Start of picture text -----**<br> SCALE 1:1 SCALE 1:1<br>Polarity Band Non−Polarity Band<br>HE<br>NOTES:<br>1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.<br>E 2. CONTROLLING DIMENSION: INCH.<br>3. DIMENSION b SHALL BE MEASURED WITHIN DIMENSION L1.<br>MILLIMETERS INCHES<br>DIM MIN NOM MAX MIN NOM MAX<br>A 1.95 2.30 2.47 0.077 0.091 0.097<br>= b D SS A1 0.05 0.10 0.20 0.002 0.004 0.008<br>b 1.96 2.03 2.20 0.077 0.080 0.087<br>c 0.15 0.23 0.31 0.006 0.009 0.012<br>D 3.30 3.56 3.95 0.130 0.140 0.156<br>E 4.06 4.32 4.60 0.160 0.170 0.181<br>as POLARITY INDICATOROPTIONAL AS NEEDED H E 5.21 5.44 5.60 0.205 0.214 0.220<br>L 0.76 1.02 1.60 0.030 0.040 0.063<br>L1 0.51 REF 0.020 REF<br>A GENERIC<br>MARKING DIAGRAM*<br>A1<br>L L1 c<br>AYWW AYWW<br>XXXXX XXXXX<br>ae Qo (Lal.<br>SOLDERING FOOTPRINT*<br>Polarity Band Non−Polarity Band<br>2.261<br>0.089 XXXXX = Specific Device Code<br>—— A = Assembly Location<br>Y = Year<br>WW = Work Week<br>= Pb−Free Package<br>2.743<br>(Note: Microdot may be in either location)<br>0.108<br>*This information is generic. Please refer to<br>device data sheet for actual part marking.<br>Lrt Pb−Free indicator, “G” or microdot “ ”, |<br>2.159 may or may not be present.<br>0.085 mm<br>SCALE 8:1<br>c— (—) inches<br>**----- End of picture text -----**<br> *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. **DOCUMENT NUMBER: 98ASB42669B DESCRIPTION: SMB** [[_ Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. **PAGE 1 OF 1** ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. www.onsemi.com © Semiconductor Components Industries, LLC, 2019 **onsemi** , , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “ **onsemi** ” or its affiliates and/or subsidiaries in the United States and/or other countries. **onsemi** owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. 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Buyer is responsible for its products and applications using **onsemi** products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by **onsemi** . “Typical” parameters which may be provided in **onsemi** data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. **onsemi** does not convey any license under any of its intellectual property rights nor the rights of others. **onsemi** products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use **onsemi** products for any such unintended or unauthorized application, Buyer shall indemnify and hold **onsemi** and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that **onsemi** was negligent regarding the design or manufacture of the part. **onsemi** is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. ## **PUBLICATION ORDERING INFORMATION** **LITERATURE FULFILLMENT** : **TECHNICAL SUPPORT Email Requests to:** orderlit@onsemi.com **North American Technical Support: Europe, Middle East and Africa Technical Support:** Voice Mail: 1 800−282−9855 Toll Free USA/Canada Phone: 00421 33 790 2910 **onsemi Website:** www.onsemi.com Phone: 011 421 33 790 2910 For additional information, please contact your local Sales Representative ◊ **==> picture [232 x 43] intentionally omitted <==**
Updated at June 8, 2026
onsemi is a premier global supplier of intelligent power and sensing technologies, driving disruptive innovations across the automotive, industrial, and cloud infrastructure markets. Recognized for their commitment to sustainability and reliable supply chains, the company accelerates advancements in vehicle electrification, industrial automation, and 5G networks by solving the industry's most complex design challenges. At the core of their portfolio is an industry-leading selection of discrete semiconductors. This extensive range features thousands of high-performance bipolar transistors, single and dual MOSFETs, and a comprehensive array of diodes, including Zener, Schottky, and fast-recovery rectifiers. Engineered for superior thermal performance and energy efficiency, these foundational components are critical for demanding power conversion, switching, and signal conditioning applications. Beyond essential discretes, onsemi provides a robust suite of advanced power management and circuit protection solutions. Their lineup includes intelligent power modules, single IGBTs, and transient voltage suppression (TVS) diodes designed to safeguard sensitive circuitry. Complimented by integrated passive filters, AC/DC LED driver ICs, and specialized sub-2.4GHz RF transceivers, onsemi equips engineers with the scalable, high-quality technologies needed to build a cleaner, smarter, and more connected world.
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