MURHF860CTG
Fast / Ultrafast Diode, 600 V, 8 A, Dual Common Cathode, 2.8 V, 35 ns, 100 A
- Manufacturer: ONSEMI
- Product type: Fast & Ultrafast Recovery Rectifier Diodes
- Repetitive Reverse Voltage Vrrm Max:600V; Forward Current If(AV):8A; Diode Configuration:Dual Common Cathode; Forward Voltage VF Max:2.8V; Reverse Recovery Time trr Max:35ns; Forward Su
- SVHC: Lead (19-Jan-2021)
- No. of Pins: 3 Pin
- Product Range: -
- Qualification: -
- Diode Case Style: TO-220
- Diode Configuration: Dual Common Cathode
- Forward Voltage Max: 2.8V
- Forward Surge Current: 100A
- Reverse Recovery Time: 35ns
- Average Forward Current: 8A
- Operating Temperature Max: 150°C
- Repetitive Peak Reverse Voltage: 600V
| Delivery and price | |
|---|---|
| Units per pack | 100 |
| Price | 1.59 € |
| Current stock | 10+ |
| Lead time | 30 days |
## MURHF860CT ## Switch-mode Power Rectifier These state-of-the-art Switch−mode power rectifiers are designed for use in switching power supplies, inverters and as free wheeling diodes. ## **www.onsemi.com** ## **Features** - Ultrafast 35 Nanosecond Recovery Times - 150°C Operating Junction Temperature **ULTRAFAST RECTIFIER 8.0 AMPERES, 600 VOLTS** - Electrically Isolated. No Isolation Hardware Required - Epoxy Meets UL 94 V−0 @ 0.125 in - High Temperature Glass Passivated Junction - High Voltage Capability to 600 V 3 2 ~~+.~~ 1 - Low Leakage Specified @ 150°C Case Temperature - This is a Pb−Free Package* ## **MARKING DIAGRAM** ## **Mechanical Characteristics:** - Case: Epoxy, Molded - Weight: 1.9 Grams (Approximately) - Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable • Lead Temperature for Soldering Purposes: 260°C Max for 10 Seconds UH860GAYWW **ISOLATED TO−220** A K A **MAXIMUM RATINGS** (Per Leg) **CASE 221AH Rating Symbol Value Unit** 1 2 Peak Repetitive Reverse Voltage VRRM 600 V 3 Working Peak Reverse Voltage VRWM DC Blocking Voltage VR Average Rectified Forward Current(Rated VR, TC = 120 ° C) Total Device IF(AV) 4.08.0 A AY = Assembly Location= Year Peak Repetitive Forward Current IFM 16 A WW = Work Week (Rated VR, Square Wave, UH860 = Device Code 20 kHz, TC = 120 ° C) G = Pb−Free Package AKA = Diode Polarity Non−Repetitive Peak Surge Current IFSM 100 A (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) **ORDERING INFORMATION** Operating Junction and Storage TemperaTJ, Tstg −65 to +150 ° C ture Range **Device Package Shipping THERMAL CHARACTERISTICS** (Per Leg) MURHF860CTG TO−220 50 Units/Rail **Rating Symbol Value Unit** (Pb−Free) Max Thermal Resistance, Junction−to−Case R JC 4.1 ° C/W ~~= Tr~~ Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Publication Order Number: **MURHF860CT/D** **1** © Semiconductor Components Industries, LLC, 2016 **July, 2016 − Rev. 6** **MURHF860CT** ## **ELECTRICAL CHARACTERISTICS** (Per Leg) |**ELECTRICAL CHARACTERISTICS**(Per Leg)|||| |---|---|---|---| |**Characteristic**|**Symbol**|**Value**|**Unit**| |Maximum Instantaneous Forward Voltage (Note 1)<br>(iF= 4.0 A, TC= 150°C)<br>(iF= 4.0 A, TC= 25°C)|vF|2.5<br>2.8|V| |Maximum Instantaneous Reverse Current (Note 1)<br>(Rated DC Voltage, TC= 150°C)<br>(Rated DC Voltage, TC= 25°C)|iR|500<br>10|�A| |Maximum Reverse Recovery Time<br>(IF= 1.0 A, di/dt = 50 A/�s)|trr|35|ns| Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulse Width = 300 � s, Duty Cycle ≤ 2.0% **www.onsemi.com** **2** **MURHF860CT** ## **PACKAGE DIMENSIONS** **TO−220 FULLPACK, 3−LEAD** CASE 221AH ISSUE F **==> picture [455 x 350] intentionally omitted <==** **----- Start of picture text -----**<br> A B SEATINGPLANE NOTES:1. DIMENSIONING AND TOLERANCING PER ASME<br>E Y14.5M, 1994.<br>E/2 P A 2. CONTROLLING DIMENSION: MILLIMETERS.<br>; - 0.14 M B A M H1 = A1 3.4. CONTOUR UNCONTROLLED IN THIS AREA.DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH AND GATE<br>PROTRUSIONS. MOLD FLASH AND GATE PROTRUSIONS NOT TO<br>EXCEED 0.13 PER SIDE. THESE DIMENSIONS ARE TO BE<br>Q aS i y MEASURED AT OUTERMOST EXTREME OF THE PLASTIC BODY.<br>D C 5. DIMENSION b2 DOES NOT INCLUDE DAMBAR PROTRUSION.<br>LEAD WIDTH INCLUDING PROTRUSION SHALL NOT EXCEED 2.00.<br>1 2 3 NOTE 3 6. CONTOURS AND FEATURES OF THE MOLDED PACKAGE BODY<br>MAY VARY WITHIN THE ENVELOP DEFINED BY DIMENSIONS A1<br>AND H1 FOR MANUFACTURING PURPOSES.<br>L L1 MILLIMETERS<br>DIM MIN MAX<br>A 4.30 4.70<br>A1 2.50 2.90<br>3X b c A2 2.50 2.90<br>3X 4als b2 Le 0.25 M B A M C — i| A2 b2b 0.541.10 0.841.40<br>c 0.49 0.79<br>e SIDE VIEW D 14.70 15.30<br>FRONT VIEW E 9.70 10.30<br>e 2.54 BSC<br>H1 6.60 7.10<br>L 12.50 14.73<br>L1 --- 2.80<br>P 3.00 3.40<br>SECTION D−D i . SLSLber . Q 2.80 3.20<br>A<br>NOTE 6<br>NOTE 6<br>H1<br>Re a<br>D D<br>A SECTION A−A<br>ALTERNATE CONSTRUCTION<br>**----- End of picture text -----**<br> ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. ## **PUBLICATION ORDERING INFORMATION** **LITERATURE FULFILLMENT** : **N. American Technical Support** : 800−282−9855 Toll Free **ON Semiconductor Website** : **www.onsemi.com** Literature Distribution Center for ON Semiconductor USA/Canada 19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA **Europe, Middle East and Africa Technical Support: Order Literature** : http://www.onsemi.com/orderlit **Phone** : 303−675−2175 or 800−344−3860 Toll Free USA/Canada Phone: 421 33 790 2910 **Fax** : 303−675−2176 or 800−344−3867 Toll Free USA/Canada **Japan Customer Focus Center** For additional information, please contact your local **Email** : orderlit@onsemi.com Phone: 81−3−5817−1050 Sales Representative ## **LITERATURE FULFILLMENT** : **www.onsemi.com** **MURHF860CT/D** **3**
Updated at June 8, 2026
onsemi is a premier global supplier of intelligent power and sensing technologies, driving disruptive innovations across the automotive, industrial, and cloud infrastructure markets. Recognized for their commitment to sustainability and reliable supply chains, the company accelerates advancements in vehicle electrification, industrial automation, and 5G networks by solving the industry's most complex design challenges. At the core of their portfolio is an industry-leading selection of discrete semiconductors. This extensive range features thousands of high-performance bipolar transistors, single and dual MOSFETs, and a comprehensive array of diodes, including Zener, Schottky, and fast-recovery rectifiers. Engineered for superior thermal performance and energy efficiency, these foundational components are critical for demanding power conversion, switching, and signal conditioning applications. Beyond essential discretes, onsemi provides a robust suite of advanced power management and circuit protection solutions. Their lineup includes intelligent power modules, single IGBTs, and transient voltage suppression (TVS) diodes designed to safeguard sensitive circuitry. Complimented by integrated passive filters, AC/DC LED driver ICs, and specialized sub-2.4GHz RF transceivers, onsemi equips engineers with the scalable, high-quality technologies needed to build a cleaner, smarter, and more connected world.
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