MURHB860CTT4G
Fast / Ultrafast Diode, 600 V, 8 A, Dual Common Cathode, 1.25 V, 35 ns, 100 A
- Manufacturer: ONSEMI
- Product type: Fast & Ultrafast Recovery Rectifier Diodes
- Repetitive Reverse Voltage Vrrm Max:600V; Forward Current If(AV):8A; Diode Configuration:Dual Common Cathode; Forward Voltage VF Max:1.25V; Reverse Recovery Time trr Max:35ns; Forward S
- SVHC: Lead (19-Jan-2021)
- Product Range: -
- Operating Temperature Max: 175°C
| Delivery and price | |
|---|---|
| Units per pack | 100 |
| Price | 0.796 € |
| Current stock | 10+ |
| Lead time | 30 days |
## MURHB860CT ## Power Rectifier ## **D[2] PAK Power Surface Mount Package** Designed for use in switching power supplies, inverters and as free wheeling diodes, these state−of−the−art devices have the following features: ## **Features** - Package Designed for Power Surface Mount Applications - Ultrafast 35 Nanosecond Recovery Times ## **http://onsemi.com** **ULTRAFAST RECTIFIER 8.0 AMPERES, 600 VOLTS** - 175°C Operating Junction Temperature - Epoxy Meets UL 94 V−0 @ 0.125 in - High Temperature Glass Passivated Junction - High Voltage Capability to 600 V - Low Leakage Specified @ 150°C Case Temperature - Short Heat Sink Tab Manufactured — Not Sheared! - Similar in Size to Industry Standard TO−220 Package - Case: Epoxy, Molded - Weight: 1.7 grams (approximately) - Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable **==> picture [134 x 103] intentionally omitted <==** **----- Start of picture text -----**<br> 1<br>4<br>3 mt<br>4 D [2] PAK<br>CASE 418B<br>STYLE 3<br>1 ><br>3<br>**----- End of picture text -----**<br> ## **MARKING DIAGRAM** - Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds - Pb−Free Packages are Available **MAXIMUM RATINGS** (Per Leg) **Rating Symbol Value Unit** Peak Repetitive Reverse Voltage VRRM 600 V Working Peak Reverse Voltage VRWM DC Blocking Voltage VR Average Rectified Forward Current(Rated VR, TC = 120 ° C) Total Device IF(AV) 4.08.0 A Peak Repetitive Forward Current IFM 8.0 A (Rated VR, Square Wave, 20 kHz, TC = 120 ° C) Non−Repetitive Peak Surge Current IFSM 100 A (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) Operating Junction and Storage TJ, Tstg −65 to +175 ° C Temperature Range ~~tt~~ Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. **==> picture [99 x 115] intentionally omitted <==** **----- Start of picture text -----**<br> AY WW<br>UH860G<br>AKA<br>A = Assembly Location<br>Y = Year<br>WW = Work Week<br>G = Pb−Free Package<br>AKA = Diode Polarity<br>**----- End of picture text -----**<br> ## **ORDERING INFORMATION** |**Device**|**Package**|**Shipping**†| |---|---|---| |MURHB860CT|D2PAK|50 Units/Rail| |MURHB860CTG|D2PAK<br>(Pb−Free)|(Pb−Free)<br>50 Units/Rail| |MURHB860CTT4|D2PAK|800/Tape & Reel| |MURHB860CTT4G|D2PAK<br>(Pb−Free)|(Pb−Free)<br>800/Tape & Reel| - †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: **MURHB860CT/D** **1** © Semiconductor Components Industries, LLC, 2011 **August, 2011 − Rev. 3** **MURHB860CT** ## **THERMAL CHARACTERISTICS** (Per Leg) |**THERMAL CHARACTERISTICS**(Per Leg)|||| |---|---|---|---| |**Rating**|**Symbol**|**Value**|**Unit**| |Maximum Thermal Resistance, Junction−to−Case|R�JC|3.0|°C/W| |Maximum Thermal Resistance, Junction−to−Ambient|R�JA|50|°C/W| |**ELECTRICAL CHARACTERISTICS**(Per Leg)|||| |**Characteristic**|**Symbol**|**Max**|**Unit**| |Maximum Instantaneous Forward Voltage (Note 1)<br>(iF= 4.0 A, TC= 150°C)<br>(iF= 4.0 A, TC= 25°C)|vF|2.5<br>2.8|V| |Maximum Instantaneous Reverse Current (Note 1)<br>(Rated DC Voltage, TC= 150°C)<br>(Rated DC Voltage, TC= 25°C)|iR|500<br>10|�A| |Maximum Reverse RecoveryTime(IF= 1.0 A,di/dt = 50 A/�s)|trr|35|ns| 1. Pulse Test: Pulse Width = 300 � s, Duty Cycle ≤ 2.0% **http://onsemi.com** **2** MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** ## **D[2] PAK 3** CASE 418B−04 **==> picture [442 x 456] intentionally omitted <==** **----- Start of picture text -----**<br> ISSUE L<br>SCALE 1:1 NOTES:<br>C 1. DIMENSIONING AND TOLERANCING<br>PER ANSI Y14.5M, 1982.<br>E 2. CONTROLLING DIMENSION: INCH.<br>−B− V 3. 418B−01 THRU 418B−03 OBSOLETE,NEW STANDARD 418B−04.<br>W<br>4 INCHES MILLIMETERS<br>DIM MIN MAX MIN MAX<br>A 0.340 0.380 8.64 9.65<br>B 0.380 0.405 9.65 10.29<br>A C 0.160 0.190 4.06 4.83<br>S D 0.020 0.035 0.51 0.89<br>1 2 3 E 0.045 0.055 1.14 1.40<br>F 0.310 0.350 7.87 8.89<br>G 0.100 BSC 2.54 BSC<br>−T− H 0.080 0.110 2.03 2.79<br>K J 0.018 0.025 0.46 0.64<br>SEATINGPLANE G J W KL 0.0900.052 0.0720.110 2.291.32 2.791.83<br>M 0.280 0.320 7.11 8.13<br>ae H N 0.197 REF 5.00 REF<br>D 3 PL P 0.079 REF 2.00 REF<br>R 0.039 REF 0.99 REF<br>0.13 (0.005) M T B M S 0.575 0.625 14.60 15.88<br>V 0.045 0.055 1.14 1.40<br>VARIABLE<br>CONFIGURATION<br>ZONE N P<br>R<br>U<br>L L L<br>M M M<br>F F F<br>VIEW W−W VIEW W−W VIEW W−W<br>1 2 3<br>STYLE 1: STYLE 2: STYLE 3: STYLE 4: STYLE 5: STYLE 6:<br>PIN 1. BASE PIN 1. GATE PIN 1. ANODE PIN 1. GATE PIN 1. CATHODE PIN 1. NO CONNECT<br>2. COLLECTOR 2. DRAIN 2. CATHODE 2. COLLECTOR 2. ANODE 2. CATHODE<br>3. EMITTER 3. SOURCE 3. ANODE 3. EMITTER 3. CATHODE 3. ANODE<br>4. COLLECTOR 4. DRAIN 4. CATHODE 4. COLLECTOR 4. ANODE 4. CATHODE<br>**----- End of picture text -----**<br> DATE 17 FEB 2015 ## **MARKING INFORMATION AND FOOTPRINT ON PAGE 2** Electronic versions are uncontrolled except when accessed directly from the Document Repository. **DOCUMENT NUMBER: 98ASB42761B** Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. **DESCRIPTION: D[2] PAK 3 PAGE 1 OF 2** ~~|eee1~~ ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. www.onsemi.com © Semiconductor Components Industries, LLC, 2019 **==> picture [182 x 232] intentionally omitted <==** **----- Start of picture text -----**<br> D [2] PAK 3<br>CASE 418B−04<br>ISSUE L<br>GENERIC<br>MARKING DIAGRAM*<br>xx AYWW<br>xxxxxxxxG<br>xxxxxxxxx xxxxxxxxG<br>AYWW<br>AWLYWWG AKA<br>oe<br>IC Standard Rectifier<br>xx = Specific Device Code<br>A = Assembly Location<br>WL = Wafer Lot<br>Y = Year<br>WW = Work Week<br>G = Pb−Free Package<br>AKA = Polarity Indicator<br>**----- End of picture text -----**<br> DATE 17 FEB 2015 - *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ ”, may or may not be present. ## **SOLDERING FOOTPRINT*** **==> picture [147 x 173] intentionally omitted <==** **----- Start of picture text -----**<br> 10.49<br>8.38<br>16.155 T L 7<br>2X<br>3.504<br>2X<br>UE<br>1.016<br>5.080<br>aro<br>PITCH<br>DIMENSIONS: MILLIMETERS<br>**----- End of picture text -----**<br> *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Electronic versions are uncontrolled except when accessed directly from the Document Repository. **DOCUMENT NUMBER: 98ASB42761B** Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. **DESCRIPTION: D[2] PAK 3 PAGE 2 OF 2** ~~—~~ ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. www.onsemi.com © Semiconductor Components Industries, LLC, 2019 **onsemi** , , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “ **onsemi** ” or its affiliates and/or subsidiaries in the United States and/or other countries. **onsemi** owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of **onsemi’s** product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. **onsemi** reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as−is” and **onsemi** makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using **onsemi** products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by **onsemi** . “Typical” parameters which may be provided in **onsemi** data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. **onsemi** does not convey any license under any of its intellectual property rights nor the rights of others. **onsemi** products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use **onsemi** products for any such unintended or unauthorized application, Buyer shall indemnify and hold **onsemi** and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that **onsemi** was negligent regarding the design or manufacture of the part. **onsemi** is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. ## **PUBLICATION ORDERING INFORMATION** **LITERATURE FULFILLMENT** : **TECHNICAL SUPPORT Email Requests to:** orderlit@onsemi.com **North American Technical Support: Europe, Middle East and Africa Technical Support:** Voice Mail: 1 800−282−9855 Toll Free USA/Canada Phone: 00421 33 790 2910 **onsemi Website:** www.onsemi.com Phone: 011 421 33 790 2910 For additional information, please contact your local Sales Representative ◊ **==> picture [232 x 43] intentionally omitted <==**
Updated at June 8, 2026
onsemi is a premier global supplier of intelligent power and sensing technologies, driving disruptive innovations across the automotive, industrial, and cloud infrastructure markets. Recognized for their commitment to sustainability and reliable supply chains, the company accelerates advancements in vehicle electrification, industrial automation, and 5G networks by solving the industry's most complex design challenges. At the core of their portfolio is an industry-leading selection of discrete semiconductors. This extensive range features thousands of high-performance bipolar transistors, single and dual MOSFETs, and a comprehensive array of diodes, including Zener, Schottky, and fast-recovery rectifiers. Engineered for superior thermal performance and energy efficiency, these foundational components are critical for demanding power conversion, switching, and signal conditioning applications. Beyond essential discretes, onsemi provides a robust suite of advanced power management and circuit protection solutions. Their lineup includes intelligent power modules, single IGBTs, and transient voltage suppression (TVS) diodes designed to safeguard sensitive circuitry. Complimented by integrated passive filters, AC/DC LED driver ICs, and specialized sub-2.4GHz RF transceivers, onsemi equips engineers with the scalable, high-quality technologies needed to build a cleaner, smarter, and more connected world.
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