MURF1620CTG

## MURF1620CTG 

## Switch-mode Power Rectifier 

These state−of−the−art devices are designed for use in switching power supplies, inverters and as free wheeling diodes. 

## **Features** 

- Ultrafast 35 Nanosecond Recovery Times 

- 150°C Operating Junction Temperature 

- Epoxy Meets UL 94 V−0 @ 0.125 in 

## **www.onsemi.com** 

**ULTRAFAST RECTIFIER 16 AMPERES, 200 VOLTS** 

- High Temperature Glass Passivated Junction 

- Low Leakage Specified @ 150°C Case Temperature 

- Current Derating @ Both Case and Ambient Temperatures 

- Electrically Isolated. No Isolation Hardware Required. 

- ESD Rating: 

   - ♦ Human Body Model = 3B (> 8 kV) 

   - ♦ Machine Model = C (> 400 V) 

- This is a Pb−Free Package* 

## **Mechanical Characteristics:** 

- Case: Epoxy, Molded 

- Weight: 1.9 Grams (Approximately) 

- Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable 

- Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds 

**==> picture [91 x 70] intentionally omitted <==**

**----- Start of picture text -----**<br>
ISOLATED TO−220<br>CASE 221AH<br>1<br>2<br>— 3<br>**----- End of picture text -----**<br>


## **MARKING DIAGRAM** 

**==> picture [163 x 59] intentionally omitted <==**

**----- Start of picture text -----**<br>
A = Assembly Location<br>Y = Year<br>AYWW<br>WW = Work Week<br>U1620G<br>U1620 = Device Code<br>AKA<br>G = Pb−Free Package<br>AKA = Diode Polarity<br>**----- End of picture text -----**<br>


**ORDERING INFORMATION Device Package Shipping**[†] MURF1620CTG TO−220 50 Units / Rail (Pb−Free) ~~Tp~~ †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 

- *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 

Publication Order Number: **MURF1620CT/D** 

**1** 

© Semiconductor Components Industries, LLC, 2016 **July, 2016 − Rev. 11** 

**MURF1620CTG** 

## **MAXIMUM RATINGS** (Per Leg) 

|**Rating**|**Symbol**|**Value**|**Unit**|
|---|---|---|---|
|Peak Repetitive Reverse Voltage<br>Working Peak Reverse Voltage<br>DC Blocking Voltage|VRRM<br>VRWM<br>VR|200|V|
|Average Rectified Forward Current<br>Per Diode, (Rated VR), TC= 150°C<br>Total Device|IF(AV)|8<br>16|A|
|Peak Repetitive Forward Current<br>(Rated VR, Square Wave, 20 kHz), TC= 150°C|IFM|16|A|
|Non−repetitive Peak Surge Current<br>(Surge applied at rated load conditions halfwave, single phase, 60 Hz)|IFSM|100|A|
|Operating Junction and Storage Temperature|TJ, Tstg|−65 to +150|°C|
|RMS Isolation Voltage<br>(t = 0.3 second, R.H.≤30%, TA= 25°C) (Note 1)|Viso1|4500|V|



Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 

1. Proper strike and creepage distance must be provided. 

## **THERMAL CHARACTERISTICS** (Per Leg) 

|**THERMAL CHARACTERISTICS**(Per Leg)||||
|---|---|---|---|
|**Characteristic**|**Symbol**|**Value**|**Unit**|
|Maximum Thermal Resistance, Junction−to−Case|R�JC|4.2|°C/W|
|Lead Temperature for SolderingPurposes: 1/8″from the Case for 5 seconds|TL|260|°C|



## **ELECTRICAL CHARACTERISTICS** (Per Leg) 

|**ELECTRICAL CHARACTERISTICS**(Per Leg)||||
|---|---|---|---|
|**Characteristic**|**Symbol**|**Value**|**Unit**|
|Maximum Instantaneous Forward Voltage (Note 2)<br>(iF= 8.0 A, TC= 150°C)<br>(iF= 8.0 A, TC= 25°C)|vF|0.895<br>0.975|V|
|Maximum Instantaneous Reverse Current (Note 2)<br>(Rated DC Voltage, TC= 150°C)<br>(Rated DC Voltage, TC= 25°C)|iR|250<br>5.0|�A|
|Maximum Reverse Recovery Time<br>(IF= 1.0  A, di/dt = 50 A/�s)<br>(IF= 0.5 A, iR= 1.0  A, IREC= 0.25 A)|trr|35<br>25|ns|



Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse Test: Pulse Width = 300 � s, Duty Cycle ≤ 2.0%. 

**==> picture [489 x 169] intentionally omitted <==**

**----- Start of picture text -----**<br>
100 10 k<br>50<br>1.0 k<br>20 400<br>10 100<br>40<br>5.0<br>10<br>2.01.0 TJ = 100°C 25°C 2.01.0 TJ = 100°C<br>0.4 25°C<br>0.3 0.1<br>0.04<br>0.1 0.01<br>0.2 0.4 0.6 0.8 1.0 1.2 0 20 40 60 80 100 120 140 160 180 200<br>vF, INSTANTANEOUS VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS)<br>�<br>IR, REVERSE CURRENT (��A)<br>, INSTANTANEOUS FORWARD CURRENT (AMPS)<br>iF<br>**----- End of picture text -----**<br>


**Figure 1. Typical Forward Voltage, Per Leg** 

**Figure 2. Typical Reverse Current, Per Leg*** 

**www.onsemi.com** 

**2** 

**MURF1620CTG** 

## **PACKAGE DIMENSIONS** 

**TO−220 FULLPACK, 3−LEAD** CASE 221AH ISSUE F 

**==> picture [411 x 350] intentionally omitted <==**

**----- Start of picture text -----**<br>
A B SEATINGPLANE NOTES:1. DIMENSIONING AND TOLERANCING PER ASME<br>E Y14.5M, 1994.<br>E/2 P A 2. CONTROLLING DIMENSION: MILLIMETERS.<br>; - 0.14 M B A M H1 = A1 3.4.4. CONTOUR UNCONTROLLED IN THIS AREA.DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH AND GATE<br>EXCEED 0.13 PER SIDE. THESE DIMENSIONS ARE TO BE<br>Q aS i y<br>D C 5.<br>1 2 3 NOTE 3 6.<br>AND H1 FOR MANUFACTURING PURPOSES.<br>L L1 MILLIMETERS<br>DIM MIN MAX<br>A 4.30 4.70<br>A1 2.50 2.90<br>3X b c A2 2.50 2.90<br>3X 4als b2 Le 0.25 M B A M C — i| A2 b2b 0.541.10 0.841.40<br>c 0.49 0.79<br>e SIDE VIEW D 14.70 15.30<br>FRONT VIEW E 9.70 10.30<br>e 2.54 BSC<br>H1 6.60 7.10<br>L 12.50 14.73<br>L1 --- 2.80<br>P 3.00 3.40<br>SECTION D−D i . SLSLber . Q 2.80 3.20<br>A<br>NOTE 6<br>NOTE 6<br>H1<br>Re a<br>D D<br>A SECTION A−A<br>ALTERNATE CONSTRUCTION<br>**----- End of picture text -----**<br>


- 3.4.4. CONTOUR UNCONTROLLED IN THIS AREA.DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH AND GATE PROTRUSIONS. MOLD FLASH AND GATE PROTRUSIONS NOT TO EXCEED 0.13 PER SIDE. THESE DIMENSIONS ARE TO BE MEASURED AT OUTERMOST EXTREME OF THE PLASTIC BODY. 

- 5. DIMENSION b2 DOES NOT INCLUDE DAMBAR PROTRUSION. LEAD WIDTH INCLUDING PROTRUSION SHALL NOT EXCEED 2.00. 

- 6. CONTOURS AND FEATURES OF THE MOLDED PACKAGE BODY MAY VARY WITHIN THE ENVELOP DEFINED BY DIMENSIONS A1 AND H1 FOR MANUFACTURING PURPOSES. 

ON Semiconductor and      are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 

## **PUBLICATION ORDERING INFORMATION** 

**LITERATURE FULFILLMENT** : **N. American Technical Support** : 800−282−9855 Toll Free **ON Semiconductor Website** : **www.onsemi.com** Literature Distribution Center for ON Semiconductor USA/Canada 19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA **Europe, Middle East and Africa Technical Support: Order Literature** : http://www.onsemi.com/orderlit **Phone** : 303−675−2175 or 800−344−3860 Toll Free USA/Canada Phone: 421 33 790 2910 **Fax** : 303−675−2176 or 800−344−3867 Toll Free USA/Canada **Japan Customer Focus Center** For additional information, please contact your local **Email** : orderlit@onsemi.com Phone: 81−3−5817−1050 Sales Representative 

## **LITERATURE FULFILLMENT** : 

**www.onsemi.com** 

**MURF1620CT/D** 

**3**