MURD620CTG

## Switch-mode Power Rectifier **DPAK Surface Mount Package** 

## MURD620CT, NRVUD620CT, SRVUD620CT, SNRVUD620CT 

These state−of−the−art devices are designed for use in switching power supplies, inverters and as free wheeling diodes. 

## **Features** 

- Ultrafast 35 Nanosecond Recovery Time 

- Low Forward Voltage Drop 

- Low Leakage 

- ESD Rating: 

   - ♦ Human Body Model = 3B (> 8 kV) 

   - ♦ Machine Model = C (> 400 V) 

- NRVUD, SRVUD and SNRVUD Prefixes for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable 

- These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant 

## **Mechanical Characteristics:** 

- Case: Epoxy, Molded 

- Weight: 0.4 Gram (Approximately) 

- Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable 

- Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds 

## **www.onsemi.com** 

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ULTRAFAST RECTIFIER<br>6.0 AMPERES<br>200 VOLTS<br>DPAK<br>CASE 369C<br>»<br>1<br>4<br>3 oat<br>MARKING DIAGRAMS<br>AYWW AYWW<br>U U<br>620TG S620TG<br>A 4) = Assembly Location* 4]<br>Y = Year<br>WW = Work Week<br>U620T = Device Code (MURD/NRVUD/<br>SNRVUD620CT)<br>US620T = Device Code (SRVUD620CT)<br>G = Pb−Free Package<br>**----- End of picture text -----**<br>


* The Assembly Location Code (A) is front side optional. In cases where the Assembly Location is stamped in the package bottom (molding ejecter pin), the front side assembly code may be blank. 

## **ORDERING INFORMATION** 

|**Device**|**Package**|**Shipping**†|
|---|---|---|
|MURD620CTG|DPAK<br>(Pb−Free)|75 Units / Rail|
|NRVUD620CTG|DPAK<br>(Pb−Free)|75 Units / Rail|
|MURD620CTT4G|DPAK<br>(Pb−Free)|2,500 /<br>Tape & Reel|
|NRVUD620CTT4G|DPAK<br>(Pb−Free)|2,500 /<br>Tape & Reel|
|SRVUD620CTT4G|DPAK<br>(Pb−Free)|2,500 /<br>Tape & Reel|
|SNRVUD620CTT4G|DPAK<br>(Pb−Free)|2,500 /<br>Tape & Reel|
|NRVUD620CTG−<br>VF01|DPAK<br>(Pb−Free)|2,500 /<br>Tape & Reel|



- †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 

Publication Order Number: 

**1** 

© Semiconductor Components Industries, LLC, 2016 **August, 2020 − Rev. 15** 

**MURD620CT/D** 

**MURD620CT, NRVUD620CT, SRVUD620CT, SNRVUD620CT** 

## **MAXIMUM RATINGS** 

|**MAXIMUM RATINGS**||||
|---|---|---|---|
|**Rating**|**Symbol**|**Value**|**Unit**|
|Peak Repetitive Reverse Voltage<br>Working Peak Reverse Voltage<br>DC Blocking Voltage|VRRM<br>VRWM<br>VR|200|V|
|Average Rectified Forward Current<br>(TC= 140°C)<br>Per Diode<br>Per Device|IF(AV)|3.0<br>6.0|A|
|Peak Repetitive Forward Current<br>(Square Wave, Duty = 0.5, TC= 145°C)<br>Per Diode|IF|6.0|A|
|Non−Repetitive Peak Surge Current<br>(Surge Applied at Rated Load Conditions Halfwave, 60 Hz)|IFSM|50|A|
|Operating Junction and Storage Temperature Range|TJ, Tstg|−65 to +175|°C|



Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 

## **THERMAL CHARACTERISTICS** (Per Diode) 

|**THERMAL CHARACTERISTICS**(Per Diode)||||
|---|---|---|---|
|**Characteristic**|**Symbol**|**Value**|**Unit**|
|Thermal Resistance, Junction−to−Case|R�JC|9|°C/W|
|Thermal Resistance, Junction−to−Ambient (Note 1)|R�JA|80|°C/W|



1. Rating applies when surface mounted on the minimum pad sizes recommended. 

## **ELECTRICAL CHARACTERISTICS** (Per Diode) 

|**ELECTRICAL CHARACTERISTICS**(Per Diode)||||
|---|---|---|---|
|**Characteristic**|**Symbol**|**Value**|**Unit**|
|Maximum Instantaneous Forward Voltage Drop (Note 2)<br>(iF= 3 Amps, TC= 25°C)<br>(iF= 3 Amps, TC= 125°C)<br>(iF= 6 Amps, TC= 25°C)<br>(iF= 6 Amps, TC= 125°C)|vF|1<br>0.96<br>1.2<br>1.13|V|
|Maximum Instantaneous Reverse Current (Note 2)<br>(TJ= 25°C, Rated dc Voltage)<br>(TJ= 125°C, Rated dc Voltage)|iR|5<br>250|�A|
|Maximum Reverse Recovery Time<br>(IF= 1 Amp, di/dt = 50 Amps/�s, VR= 30 V, TJ= 25°C)<br>(IF= 0.5 Amp, iR= 1 Amp, IREC= 0.25 A, VR= 30 V, TJ= 25°C)|trr|35<br>25|ns|



Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 

2. Pulse Test: Pulse Width = 300 � s, Duty Cycle ≤ 2.0%. 

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**2** 

**MURD620CT, NRVUD620CT, SRVUD620CT, SNRVUD620CT** 

## **TYPICAL CHARACTERISTICS** 

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100 100<br>70 TJ = 175 ° C<br>10<br>50<br>1 150 ° C<br>100 ° C<br>30<br>0.1<br>20<br>0.01<br>25 ° C<br>10 0.001<br>7.0<br>0.0001<br>0 20 40 60 80 100 120 140 160 180 200<br>5.0 VR, REVERSE VOLTAGE (V)<br>Figure 2. Typical Leakage Current* (Per Leg)<br>3.0 175°C TJ = 25°C * The curves shown are typical for the highest voltage device in thevoltage grouping. Typical reverse current for lower voltage selections<br>2.0 can be estimated from these curves if VR is sufficiently below rated<br>VR.<br>150°C 100°C 14<br>1.0 13 5.0 SINE<br>12 10 WAVE<br>0.7<br>11<br>10 IPK/IAV = 20 dc<br>0.5<br>9.0<br>8.0<br>7.0 SQUARE<br>0.3<br>6.0 WAVE<br>5.0<br>0.2<br>4.0<br>3.0 T J  = 175°C<br>2.0<br>0.1<br>1.0<br>0 0.2 0.4 0.6 0.8 1.0 1.2 1.4<br>0<br>vF, INSTANTANEOUS VOLTAGE (V) 0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10<br>Figure 1. Typical Forward Voltage (Per Leg) IF(AV), AVERAGE FORWARD CURRENT (A)<br>Figure 3. Average Power Dissipation (Per Leg)<br>8.0 4.0<br>RATED VOLTAGE APPLIED RATED VOLTAGE APPLIED<br>7.0 R�JC = 9°C/W 3.5 R�JA = 80°C/W<br>6.0 3.0<br>TJ = 175°C SURFACE MOUNTED ON<br>5.0 2.5<br>MIN. PAD SIZE RECOMMENDED<br>dc<br>4.0 2.0<br>SINE WAVE<br>dc<br>3.0 OR 1.5 T J  = 175°C<br>SQUARE WAVE<br>2.0 1.0 SINE WAVE<br>OR<br>1.0 0.5 SQUARE WAVE<br>0 0<br>100 110 120 130 140 150 160 170 180 0 20 40 60 80 100 120 140 160 180 200<br>TC, CASE TEMPERATURE ( ° C) TA, AMBIENT TEMPERATURE ( ° C)<br>A)<br>�<br>, REVERSE CURRENT (<br>IR<br>, INSTANTANEOUS FORWARD CURRENT (AMPS)<br>iF<br>, AVERAGE POWER DISSIPATION (WATTS)<br>F(AV)<br>P<br>, AVERAGE FORWARD CURRENT (AMPS) , AVERAGE FORWARD CURRENT (AMPS)<br>IF(AV) IF(AV)<br>**----- End of picture text -----**<br>


**Figure 4. Current Derating, Case (Per Leg)** 

**Figure 5. Current Derating, Ambient (Per Leg)** 

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**3** 

**MURD620CT, NRVUD620CT, SRVUD620CT, SNRVUD620CT** 

## **TYPICAL CHARACTERISTICS** 

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100<br>TJ = 25 ° C<br>10<br>1<br>0 10 20 30 40 50 60 70 80 90 100<br>VR, REVERSE VOLTAGE (V)<br>C, CAPACITANCE (pF)<br>**----- End of picture text -----**<br>


**Figure 6. Typical Capacitance (Per Leg)** 

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**4** 

MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** 

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4 DPAK (SINGLE GAUGE)<br>CASE 369C<br>ISSUE F<br>1 ® [2]<br>DATE 21 JUL 2015<br>3<br>SCALE 1:1<br>NOTES:<br>A 1. DIMENSIONING AND TOLERANCING PER ASME<br>Y14.5M, 1994.<br>E C 2. CONTROLLING DIMENSION: INCHES.<br>A 3. THERMAL PAD CONTOUR OPTIONAL WITHIN DI-<br>b3 B c2 4. DIMENSIONS D AND E DO NOT INCLUDE MOLDMENSIONS b3, L3 and Z.<br>FLASH, PROTRUSIONS, OR BURRS. MOLD<br>FLASH, PROTRUSIONS, OR GATE BURRS SHALL<br>4 NOT EXCEED 0.006 INCHES PER SIDE.<br>L3 Ele 4| Of Z 5. DIMENSIONS D AND E ARE DETERMINED AT THE<br>D DETAIL A H OUTERMOST EXTREMES OF THE PLASTIC BODY.<br>6. DATUMS A AND B ARE DETERMINED AT DATUM<br>1 2 3 PLANE H.<br>7. OPTIONAL MOLD FEATURE.<br>L4 NOTE 7 DIM MININCHESMAX MILLIMETERSMIN MAX<br>b2 c BOTTOM VIEW A 0.086 0.094 2.18 2.38<br>e SIDE VIEW A1 0.000 0.005 0.00 0.13<br>b b 0.025 0.035 0.63 0.89<br>TOP VIEW 0.005 (0.13) M C b2b3 0.0280.180 0.0450.215 0.724.57 1.145.46<br>c 0.018 0.024 0.46 0.61<br>c2 0.018 0.024 0.46 0.61<br>H Z Z D 0.235 0.245 5.97 6.22<br>E 0.250 0.265 6.35 6.73<br>e 0.090 BSC 2.29 BSC<br>L2 [GAUGE] PLANE C SEATINGPLANE H 0.370 0.410 9.40 10.41<br>L 0.055 0.070 1.40 1.78<br>L1 0.114 REF 2.90 REF<br>L2 0.020 BSC 0.51 BSC<br>L L3 0.035 0.050 0.89 1.27<br>A1 BOTTOM VIEW L4 −−− 0.040 −−− 1.01<br>wat L1 h GF CONSTRUCTIONSALTERNATE Z 0.155 −−− 3.93 −−−<br>DETAIL A<br>ROTATED 9  CW GENERIC<br>MARKING DIAGRAM*<br>STYLE 1: STYLE 2: STYLE 3: STYLE 4: STYLE 5:<br>PIN 1. BASE PIN 1. GATE PIN 1. ANODE PIN 1. CATHODE PIN 1. GATE<br>2. COLLECTOR 2. DRAIN 2. CATHODE 2. ANODE 2. ANODE<br>3. EMITTER 3. SOURCE 3. ANODE 3. GATE 3. CATHODE<br>4. COLLECTOR 4. DRAIN 4. CATHODE 4. ANODE 4. ANODE XXXXXXG AYWW<br>ALYWW XXX<br>STYLE 6: STYLE 7: STYLE 8: STYLE 9: STYLE 10: XXXXXG<br>PIN 1. MT1 PIN 1. GATE PIN 1. N/C PIN 1. ANODE PIN 1. CATHODE<br>2. MT2 2. COLLECTOR 2. CATHODE 2. CATHODE 2. ANODE<br>3. GATE 3. EMITTER 3. ANODE 3. RESISTOR ADJUST 3. CATHODE a d<br>4. MT2 4. COLLECTOR 4. CATHODE 4. CATHODE 4. ANODE<br>IC Discrete<br>SOLDERING FOOTPRINT* XXXXXX = Device Code<br>A = Assembly Location<br>6.20 3.00<br>L = Wafer Lot<br>0.244 0.118<br>2.58 Y =  Year<br>0.102 WW = Work Week<br>G = Pb−Free Package<br>5.80 *This information is generic. Please refer<br>0.228 1.60 6.17 to device data sheet for actual part<br>0.063 0.243 marking.<br>Ts.<br>SCALE 3:1 mm<br>inches<br>**----- End of picture text -----**<br>


*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 

Electronic versions are uncontrolled except when accessed directly from the Document Repository. **DOCUMENT NUMBER: 98AON10527D** Printed  versions are uncontrolled  except when stamped  “CONTROLLED COPY” in red. **DESCRIPTION: DPAK (SINGLE GAUGE) PAGE 1 OF 1** ~~ee~~ ON Semiconductor and          are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. 

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