MURD550PFT4G
Standard Recovery Diode, 520 V, 5 A, Single, 1.15 V, 95 ns, 75 A
- Manufacturer: ONSEMI
- Product type: Standard Recovery Rectifier Diodes
- Repetitive Reverse Voltage Vrrm Max:520V; Forward Current If(AV):5A; Diode Configuration:Single; Forward Voltage VF Max:1.15V; Reverse Recovery Time trr Max:95ns; Forward Surge Curren
- SVHC: Lead (25-Jun-2025)
- No. of Pins: 2Pins
- Product Range: -
- Qualification: -
- Diode Case Style: TO-252 (DPAK)
- Diode Configuration: Single
- Forward Voltage Max: 1.15V
- Forward Surge Current: 75A
- Reverse Recovery Time: 95ns
- Average Forward Current: 5A
- Operating Temperature Max: 175°C
- Repetitive Peak Reverse Voltage: 520V
| Delivery and price | |
|---|---|
| Units per pack | 5000 |
| Price | 0.293 € |
| Current stock | 10+ |
| Lead time | 30 days |
## MUR550APFG, MURD550PFG, MUR550PFG, MURF550PFG, NRVUD550PFT4G, NRVUD550PFT4G-VF01 **www.onsemi.com** ## SWITCHMODE Power Rectifier **ULTRAFAST RECTIFIER 5.0 AMPERES, 520 VOLTS** **MARKING DIAGRAMS** These state−of−the−art devices are designed for power factor correction in discontinuous and critical conduction mode. **==> picture [490 x 432] intentionally omitted <==** **----- Start of picture text -----**<br> AXIAL LEAD<br>correction in discontinuous and critical conduction mode. CASE 267<br>STYLE 1<br>Features<br>• 520 V Rating Meets 80% Derating Requirements of Major OEMs<br>• Low Forward Voltage Drop A<br>• Low Leakage 550APFMUR<br>• Ultrafast 95 Nanosecond Recovery Time YYWW<br>• Reduces Forward Conduction Loss aa<br>DPAK<br>• NRVUD Prefix for Automotive and Other Applications Requiring 4 CASE 369C AYWW<br>Unique Site and Control Change Requirements; AEC−Q101 STYLE 8 U<br>Qualified and PPAP Capable 1 [2] 1 550G<br>> 4)<br>• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS 3 3 4<br>Compliant<br>Pin 1: No Connect<br>Applications 4<br>• DCM PFC Designs TO−220AC<br>• Switching Power Supplies CASE 221B<br>STYLE 1<br>• Power Inverters AY WWG<br>1 MUR550PF<br>Mechanical Characteristics: KA<br>4<br>• Case: Epoxy, Molded 3<br>• Epoxy Meets UL 94 V−0 @ 0.125 in 1 4<br>• Weight: MUR550APFG: 1.1 Gram (Approximately) 3 TO−220FP<br>CASE 221E<br>MURD550PFG, NRVUD550PFT4G, STYLE 1<br>NRVUD550PFT4G−VF01: 0.4 Gram<br>1<br>(Approximately)<br>AYWWG<br>MUR550PFG, MURF550PFG: 1.9 Gram<br>4 MURF550PF<br>(Approximately) 3 KA<br>1<br>• Finish: All External Surfaces Corrosion Resistant and Terminal<br>3<br>Leads are Readily Solderable A = Assembly Location*<br>• Lead and Mounting Surface Temperature for Soldering Purposes: YY, Y = Year<br>260°C Max. for 10 Seconds WW = Work Week rr<br> or G = Pb−Free Package<br>KA = Diode Polarity<br>**----- End of picture text -----**<br> *The Assembly Location Code (A) is front side optional. In cases where the Assembly Location is stamped in the package bottom (molding ejecter pin), the front side assembly code may be blank. (Note: Microdot may be in either location) Publication Order Number: **MUR550/D** **1** © Semiconductor Components Industries, LLC, 2012 **June, 2017 − Rev. 9** **MUR550APFG, MURD550PFG, MUR550PFG, MURF550PFG, NRVUD550PFT4G,** ## **ORDERING INFORMATION** |**ORDERING INFORMATION**||| |---|---|---| |**Device**|**Package**|**Shipping**†| |MUR550APFG|Axial|500 Units/Bag| |MUR550APFRLG|Axial|1,500 Tape & Reel| |MURD550PFT4G|DPAK<br>(Pb−Free)|2,500 Tape & Reel| |NRVUD550PFT4G|DPAK<br>(Pb−Free)|2,500 Tape & Reel| |NRVUD550PFT4G−VF01|TO−220FP<br>(Pb−Free)|50 Units / Rail| |MUR550PFG|TO−220AC<br>(Pb−Free)|50 Units / Rail| |MURF550PFG|TO−220FP<br>(Pb−Free)|50 Units / Rail| †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. ## **MAXIMUM RATINGS** |**Rating**|**Symbol**|**Value**|**Unit**| |---|---|---|---| |Peak Repetitive Reverse Voltage<br>Working Peak Reverse Voltage<br>DC Blocking Voltage|VRRM<br>VRWM<br>VR|520|V| |Average Rectified Forward Current<br>(Rated VR) TC= 65°C<br>MUR550APFG, NRVUD550PFT4G−VF01<br>(Rated VR) TC= 160°C<br>MURD550PFG, NRVUD550PFT4G,<br>MUR550PFG, MURF550PFG|IF(AV)|5.0<br>5.0|A| |Non−Repetitive Peak Surge Current<br>(Surge Applied at Rated Load Conditions Halfwave, 60 Hz)<br>MUR550APFG<br>NRVUD550PFT4G, NRVUD550PFT4G−VF01, MURD550PFG<br>MUR550PFG, MURF550PFG|IFSM|85<br>75<br>100|A| |Operating Junction Temperature Range|TJ|−65 to +175|°C| |Storage Temperature Range|Tstg|−65 to +175|°C| |ESD Ratings:<br>Machine Model = C<br>Human Body Model = 3B|ESD|> 400<br>> 8000|V| Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ## **THERMAL CHARACTERISTICS** |**Characteristic**|**Symbol**|**Value**|**Unit**| |---|---|---|---| |Thermal Resistance, Junction−to−Case (Note 1)<br>MURD550PG, MUR550PFG, NRVUD550PFT4G<br>NRVUD550PFT4G−VF01, MURF550PFG|R�JC|2.8<br>5.75|°C/W| |Thermal Resistance, Junction−to−Ambient<br>NRVUD550PFT4G−VF01, MUR550APFG<br>NRVUD550PFT4G, MURD550PFG (Note 3), MURF550PFG|R�JA|Note 2<br>62<br>75|°C/W| 1. Rating applies when surface mounted on the minimum pad sizes recommended. 2. See Note 2, Ambient Mounting Data. 3. 1 inch square pad size on FR4 board. **www.onsemi.com** **2** **MUR550APFG, MURD550PFG, MUR550PFG, MURF550PFG, NRVUD550PFT4G,** ## **ELECTRICAL CHARACTERISTICS** |**ELECTRICAL CHARACTERISTICS**|||| |---|---|---|---| |**Characteristic**|**Symbol**|**Value**|**Unit**| |Maximum Instantaneous Forward Voltage Drop (Note 4)<br>(IF= 5.0 A, TJ= 25°C)<br>(IF= 5.0 A, TJ= 150°C)|VF|1.15<br>0.98|V| |Maximum Instantaneous Reverse Current (Note 4)<br>(VR= 520 V, TJ= 25°C)<br>(VR= 520 V, TJ= 150°C)|IR|5.0<br>400|�A| |Maximum Reverse Recovery Time (IF= 1.0 A, di/dt = 50 A/�s, VR= 30 V, TJ= 25°C)|trr|95|ns| Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Pulse Test: Pulse Width = 300 � s, Duty Cycle ≤ 2.0%. **www.onsemi.com** **3** # **MUR550APFG, MURD550PFG, MUR550PFG, MURF550PFG, NRVUD550PFT4G,** # **NOTE 2 — AMBIENT MOUNTING DATA** Data shown for thermal resistance junction−to−ambient (R�JA) for the mountings shown is to be used as typical guideline values for preliminary engineering or in case the tie point temperature cannot be measured. **==> picture [495 x 607] intentionally omitted <==** **----- Start of picture text -----**<br> TYPICAL VALUES FOR R � JA IN STILL AIR<br>Mounting Lead Length, L (IN)<br>Method 1/8 1/4 1/2 3/4 Units<br>1 50 51 53 55 ° C/W<br>2 R � JA 58 59 61 63 ° C/W<br>3 28 ° C/W<br>MOUNTING METHOD 1<br>P.C. Board Where Available Copper<br>Surface area is small.<br>L L<br>ÉÉÉÉÉÉÉÉÉÉÉ<br>ÉÉÉÉÉÉÉÉÉÉÉ<br>MOUNTING METHOD 2<br>Vector Push−In Terminals T−28<br>L L<br>ÉÉÉÉÉÉÉÉÉÉÉÉ<br>MOUNTING METHOD 3<br>P.C. Board with<br>1−1/2 ″ x 1−1/2 ″ Copper Surface<br>ÉÉ<br>ÉÉ L = 1/2 ″<br>ÉÉ<br>ÉÉ<br>ÉÉ<br>ÉÉ<br>Board Ground Plane<br>ÉÉ<br>ÉÉ<br>www.onsemi.com<br>4<br>**----- End of picture text -----**<br> **MUR550APFG, MURD550PFG, MUR550PFG, MURF550PFG, NRVUD550PFT4G,** **==> picture [492 x 198] intentionally omitted <==** **----- Start of picture text -----**<br> 100 100<br>10 10<br>150 ° C 150 ° C<br>1.0 1.0<br>125 ° C 25 ° C 125 ° C 25 ° C<br>0.1 0.1<br>0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6<br>vF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) VF, MAXIMUM INSTANTANEOUS FORWARD VOLTAGE<br>(VOLTS)<br>, INSTANTANEOUS FORWARD CURRENT (AMPS)iF , INSTANTANEOUS FORWARD CURRENT (AMPS)IF<br>**----- End of picture text -----**<br> **Figure 1. Typical Forward Voltage** **Figure 2. Maximum Forward Voltage** **==> picture [491 x 393] intentionally omitted <==** **----- Start of picture text -----**<br> 1.0E−3 1.0E−3<br>150 ° C<br>1.0E−4 1.0E−4<br>150 ° C<br>125 ° C<br>1.0E−5 1.0E−5<br>125 ° C<br>1.0E−6 1.0E−6<br>1.0E−7 1.0E−7 25 ° C<br>25 ° C<br>1.0E−8 1.0E−8<br>1.0E−9 1.0E−9<br>0 100 200 300 400 500 0 100 200 300 400 500<br>VR, REVERSE VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS)<br>Figure 3. Typical Reverse Current Figure 4. Maximum Reverse Current<br>10 10<br>9<br>dc<br>8<br>7 SQUARE<br>WAVE<br>SQUARE WAVE 6<br>dc<br>5 5<br>4<br>3<br>2<br>1<br>0 0<br>100 110 120 130 140 150 160 170 180 0 1 2 3 4 5 6 7 8 9 10<br>TC, CASE TEMPERATURE ( ° C) IO, AVERAGE FORWARD CURRENT (AMPS)<br>, REVERSE CURRENT (AMPS)<br>IR<br>, MAXIMUM REVERSE CURRENT (AMPS)<br>IR<br>(WATTS)<br>, AVERAGE POWER DISSIPATION<br>FO<br>P<br>, AVERAGE FORWARD CURRENT (AMPS)<br>IF<br>**----- End of picture text -----**<br> **Figure 5. Current Derating** **Figure 6. Forward Power Dissipation** **www.onsemi.com** **5** **MUR550APFG, MURD550PFG, MUR550PFG, MURF550PFG, NRVUD550PFT4G,** **==> picture [237 x 174] intentionally omitted <==** **----- Start of picture text -----**<br> 100<br>25 ° C<br>10<br>1<br>0 50 100 150 200<br>VR, REVERSE VOLTAGE (VOLTS)<br>C, CAPACITANCE (pF)<br>**----- End of picture text -----**<br> **Figure 7. Capacitance** **==> picture [489 x 381] intentionally omitted <==** **----- Start of picture text -----**<br> 100<br>0.5<br>10 0.2<br>0.1<br>0.05<br>1<br>0.01 P(pk)<br>t1<br>0.1<br>t2<br>Single Pulse DUTY CYCLE, D = t1/t2<br>0.01<br>0.000001 0.00001 0.0001 0.001 0.01 0.1 1.0 10 100 1000<br>t, TIME (s)<br>Figure 8. Thermal Response for MUR550APFG<br>10<br>0.5<br>1<br>0.2<br>0.1<br>0.05<br>0.01 P(pk)<br>0.1<br>t1<br>Single Pulse t2<br>DUTY CYCLE, D = t 1 /t 2<br>0.01<br>0.000001 0.00001 0.0001 0.001 0.01 0.1 1.0 10 100 1000<br>t, TIME (s)<br>, TRANSIENT THERMAL RESISTANCE<br>(t)<br>R<br>, TRANSIENT THERMAL RESISTANCE<br>(t)<br>R<br>**----- End of picture text -----**<br> **Figure 9. Thermal Response for MURD550PFG, NRVUD550PFT4G, NRVUD550PFT4G−VF01** **www.onsemi.com** **6** **MUR550APFG, MURD550PFG, MUR550PFG, MURF550PFG, NRVUD550PFT4G,** **==> picture [489 x 606] intentionally omitted <==** **----- Start of picture text -----**<br> 10<br>0.5<br>1<br>0.2<br>0.1<br>0.05<br>0.01 P(pk)<br>0.1<br>t1<br>Single Pulse t2<br>DUTY CYCLE, D = t 1 /t 2<br>0.01<br>0.000001 0.00001 0.0001 0.001 0.01 0.1 1.0 10 100 1000<br>t, TIME (s)<br>Figure 10. Thermal Response for MUR550PFG<br>10<br>D = 0.5<br>0.2<br>1.0<br>0.1<br>0.05<br>0.02<br>0.1 0.01 P(pk) Z�JC(t) = r(t) R�JC<br>R�JC = 1.6°C/W MAX<br>SINGLE PULSE D CURVES APPLY FOR POWER<br>PULSE TRAIN SHOWN<br>0.01 t1 t2 READ TIME AT t1<br>DUTY CYCLE, D = t 1 /t 2 TJ(pk) - TC = P(pk) Z�JC(t)<br>0.001<br>0.000001 0.00001 0.0001 0.001 0.01 0.1 1.0 10 100 1000<br>t, TIME (s)<br>Figure 11. Thermal Response, (MURF550PFG) Junction−to−Case (R � JC)<br>100<br>D = 0.5<br>0.2<br>10 0.1<br>0.05<br>0.02<br>1.0<br>0.01<br>P (pk) Z�JC(t) = r(t) R�JC<br>0.1 R�JC = 1.6°C/W MAX<br>D CURVES APPLY FOR POWER<br>PULSE TRAIN SHOWN<br>0.01 SINGLE PULSE t1 t2 READ TIME AT t1<br>DUTY CYCLE, D = t1/t2 T J(pk) - T C = P (pk) Z� JC (t)<br>0.001<br>0.000001 0.00001 0.0001 0.001 0.01 0.1 1.0 10 100 1000<br>t, TIME (s)<br>, TRANSIENT THERMAL RESISTANCE<br>(t)<br>R<br>C/W)<br>°<br>(NORMALIZED) (<br>r(t), TRANSIENT THERMAL RESPONSE<br>C/W)<br>°<br>(NORMALIZED) (<br>r(t), TRANSIENT THERMAL RESPONSE<br>**----- End of picture text -----**<br> **Figure 12. Thermal Response, (MURF550PFG) Junction−to−Ambient (R � JA)** **www.onsemi.com** **7** **MUR550APFG, MURD550PFG, MUR550PFG, MURF550PFG, NRVUD550PFT4G,** ## **PACKAGE DIMENSIONS** **AXIAL LEAD** CASE 267−05 ISSUE G **==> picture [220 x 68] intentionally omitted <==** **----- Start of picture text -----**<br> K A<br>D<br>1 2<br>B<br>K<br>**----- End of picture text -----**<br> **==> picture [119 x 109] intentionally omitted <==** **----- Start of picture text -----**<br> NOTES:<br>1. DIMENSIONS AND TOLERANCING PER ANSI<br>Y14.5M, 1982.<br>2. CONTROLLING DIMENSION: INCH.<br>3. 267-04 OBSOLETE, NEW STANDARD 267-05.<br>INCHES MILLIMETERS<br>DIM MIN MAX MIN MAX<br>A 0.287 0.374 7.30 9.50<br>B 0.189 0.209 4.80 5.30<br>D 0.047 0.051 1.20 1.30<br>K 1.000 --- 25.40 ---<br>STYLE 1:<br>PIN 1. CATHODE (POLARITY BAND)<br>2. ANODE<br>**----- End of picture text -----**<br> **DPAK (SINGLE GAUGE)** CASE 369C ISSUE F NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. **==> picture [481 x 269] intentionally omitted <==** **----- Start of picture text -----**<br> A 1. DIMENSIONING AND TOLERANCING PER ASME<br>Y14.5M, 1994.<br>E C 2. CONTROLLING DIMENSION: INCHES.<br>A 3. THERMAL PAD CONTOUR OPTIONAL WITHIN DI-<br>b3 B c2 4. DIMENSIONS D AND E DO NOT INCLUDE MOLDMENSIONS b3, L3 and Z.<br>FLASH, PROTRUSIONS, OR BURRS. MOLD<br>FLASH, PROTRUSIONS, OR GATE BURRS SHALL<br>4 NOT EXCEED 0.006 INCHES PER SIDE.<br>L3 Z 5. DIMENSIONS D AND E ARE DETERMINED AT THE<br>D DETAIL A H OUTERMOST EXTREMES OF THE PLASTIC BODY.<br>6. DATUMS A AND B ARE DETERMINED AT DATUM<br>1 2 3 PLANE H.<br>7. OPTIONAL MOLD FEATURE.<br>L4 NOTE 7 DIM MININCHESMAX MILLIMETERSMIN MAX<br>b2 c BOTTOM VIEW A 0.086 0.094 2.18 2.38<br>e SIDE VIEW A1 0.000 0.005 0.00 0.13<br>b b 0.025 0.035 0.63 0.89<br>TOP VIEW 0.005 (0.13) M C b2b3 0.0280.180 0.0450.215 0.724.57 1.145.46<br>c 0.018 0.024 0.46 0.61<br>c2 0.018 0.024 0.46 0.61<br>H Z Z D 0.235 0.245 5.97 6.22<br>E 0.250 0.265 6.35 6.73<br>e 0.090 BSC 2.29 BSC<br>L2 [GAUGE] PLANE C SEATINGPLANE H 0.370 0.410 9.40 10.41<br>L 0.055 0.070 1.40 1.78<br>L1 0.114 REF 2.90 REF<br>L2 0.020 BSC 0.51 BSC<br>L L3 0.035 0.050 0.89 1.27<br>A1 BOTTOM VIEW L4 −−− 0.040 −−− 1.01<br>L1 CONSTRUCTIONSALTERNATE Z 0.155 −−− 3.93 −−−<br>ROTATED 90 CWDETAIL A � STYLE 8:PIN 1. N/C<br>2. CATHODE<br>3. ANODE<br>4. CATHODE<br>**----- End of picture text -----**<br> ## **SOLDERING FOOTPRINT*** **==> picture [184 x 111] intentionally omitted <==** **----- Start of picture text -----**<br> 6.20 3.00<br>0.244 0.118<br>2.58<br>0.102<br>5.80<br>1.60 6.17<br>0.228<br>0.063 0.243<br>SCALE 3:1<br>� inches [mm] �<br>**----- End of picture text -----**<br> *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. **www.onsemi.com** **8** **MUR550APFG, MURD550PFG, MUR550PFG, MURF550PFG, NRVUD550PFT4G,** ## **PACKAGE DIMENSIONS** **==> picture [353 x 219] intentionally omitted <==** **----- Start of picture text -----**<br> TO−220, 2−LEAD<br>CASE 221B−04<br>ISSUE F<br>NOTES:<br>C 1. DIMENSIONING AND TOLERANCING PER ANSI<br>Y14.5M, 1982.<br>Q B F T S 2. CONTROLLING DIMENSION: INCH.<br>INCHES MILLIMETERS<br>DIM MIN MAX MIN MAX<br>4 A 0.595 0.620 15.11 15.75<br>B 0.380 0.405 9.65 10.29<br>A C 0.160 0.190 4.06 4.82<br>U D 0.025 0.039 0.64 1.00<br>1 3 F 0.142 0.161 3.61 4.09<br>H G 0.190 0.210 4.83 5.33<br>H 0.110 0.130 2.79 3.30<br>K J 0.014 0.025 0.36 0.64<br>K 0.500 0.562 12.70 14.27<br>L 0.045 0.060 1.14 1.52<br>L ea Hl e Q 0.100 0.120 e 2.54 3.04<br>L R 0.080 0.110 2.04 2.79<br>D R S 0.045 0.055 1.14 1.39<br>T 0.235 0.255 5.97 6.48<br>G J U 0.000 0.050 0.000 1.27<br>STYLE 1:<br>PIN 1. CATHODE<br> 2. N/A<br> 3. ANODE<br> 4. CATHODE<br>**----- End of picture text -----**<br> **TO−220 FULLPAK, 2−LEAD** CASE 221E−01 ISSUE A **==> picture [381 x 193] intentionally omitted <==** **----- Start of picture text -----**<br> NOTES:<br>1. DIMENSIONING AND TOLERANCING PER ANSI<br>−T− SEATINGPLANE 2. Y14.5M, 1982.CONTROLLING DIMENSION: INCH.<br>F −B− C INCHES MILLIMETERS<br>DIM MIN MAX MIN MAX<br>S A 0.617 0.633 15.67 16.07<br>Q B 0.392 0.408 9.96 10.36<br>U C 0.177 0.193 4.50 4.90<br>ne === D 0.024 0.039 0.60 1.00<br>A F 0.121 0.129 3.08 3.28<br>G 0.100 BSC 2.54 BSC<br>1 2 3 H 0.117 0.133 2.98 3.38<br>H J 0.018 0.025 0.45 0.64<br>K 0.499 0.562 12.68 14.27<br>K −Y− L 0.045 0.060 1.14 1.52<br>N 0.200 BSC 5.08 BSC<br>Q 0.122 0.138 3.10 3.50<br>an | a === R 0.101 0.117 2.56 2.96<br>G J S 0.092 0.108 2.34 2.74<br>N I R === U 0.255 0.271 6.48 6.88<br>L STYLE 1:<br>PIN 1. CATHODE<br>D 2 PL 2. N/A<br> 3. ANODE<br>0.25 (0.010) M B M Y<br>**----- End of picture text -----**<br> ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. 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Updated at April 14, 2026
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