MURB1620CTT4G
Fast / Ultrafast Diode, 200 V, 8 A, Dual Common Cathode, 975 mV, 35 ns, 100 A
- Manufacturer: ONSEMI
- Product type: Fast & Ultrafast Recovery Rectifier Diodes
- Repetitive Reverse Voltage Vrrm Max:200V; Forward Current If(AV):8A; Diode Configuration:Dual Common Cathode; Forward Voltage VF Max:975mV; Reverse Recovery Time trr Max:35ns; Forward Sur
- SVHC: Lead (25-Jun-2025)
- No. of Pins: 3 Pin
- Product Range: MURB1
- Qualification: -
- Diode Case Style: TO-263 (D2PAK)
- Diode Configuration: Dual Common Cathode
- Forward Voltage Max: 975mV
- Forward Surge Current: 100A
- Reverse Recovery Time: 35ns
- Average Forward Current: 8A
- Operating Temperature Max: 175°C
- Repetitive Peak Reverse Voltage: 200V
| Delivery and price | |
|---|---|
| Units per pack | 250 |
| Price | 0.732 € |
| Current stock | 200+ |
| Lead time | 30 days |
## MURB1620CTG, NRVUB1620CTT4G ## SWITCHMODE Power Rectifier ## **D[2] PAK Power Surface Mount Package** ## **http://onsemi.com** These state−of−the−art devices are designed for use in switching power supplies, inverters and as free wheeling diodes. ## **Features** **ULTRAFAST RECTIFIER 16 AMPERES, 200 VOLTS** - Package Designed for Power Surface Mount Applications - Ultrafast 35 Nanosecond Recovery Times - 175°C Operating Junction Temperature - Epoxy Meets UL 94 V−0 @ 0.125 in - High Temperature Glass Passivated Junction - Low Leakage Specified @ 150°C Case Temperature - Short Heat Sink Tab Manufactured − Not Sheared! - Similar in Size to Industrial Standard TO−220 Package - NRVUB Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable - These Devices are Pb−Free and are RoHS Compliant* ## **Mechanical Characteristics:** - Case: Epoxy, Molded, Epoxy Meets UL 94, V−0 - Weight: 1.7Grams (Approximately) - Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable - Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds - Device Meets MSL1 Requirements - ESD Ratings: - ♦ Machine Model = C (> 400 V) **D[2] PAK CASE 418B STYLE 3** 1 4 3 **MARKING DIAGRAM** AY WW U1620G AKA ~~-~~ A = Assembly Location Y = Year WW = Work Week U1620 = Device Code G = Pb−Free Package AKA = Diode Polarity - ♦ Human Body Model = 3B (> 8000 V) **ORDERING INFORMATION** > *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. **Device Package Shipping**[†] MURB1620CTG D[2] PAK 50 Units / Rail (Pb−Free) MURB1620CTT4G D[2] PAK 800 / (Pb−Free) Tape & Reel NRVUB1620CTT4G D[2] PAK 800 / (Pb−Free) Tape & Reel ~~See~~ †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: **MURB1620CT/D** **1** © Semiconductor Components Industries, LLC, 2012 **November, 2012 − Rev. 7** **MURB1620CTG, NRVUB1620CTT4G** ## **MAXIMUM RATINGS** (Per Leg) |**MAXIMUM RATINGS**(Per Leg)|||| |---|---|---|---| |**Rating**|**Symbol**|**Value**|**Unit**| |Peak Repetitive Reverse Voltage<br>Working Peak Reverse Voltage<br>DC Blocking Voltage|VRRM<br>VRWM<br>VR|200|V| |Average Rectified Forward Current<br>(Rated VR, TC= 150°C) Total Device|IF(AV)|8.0<br>16|A| |Peak Repetitive Forward Current<br>(Rated VR, Square Wave, 20 kHz, TC= 150°C)|IFM|16|A| |Non−Repetitive Peak Surge Current<br>(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)|IFSM|100|A| |Operating Junction and Storage Temperature Range|TJ, Tstg|−65 to +175|°C| Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. ## **THERMAL CHARACTERISTICS** (Per Leg) |**THERMAL CHARACTERISTICS**(Per Leg)|||| |---|---|---|---| |**Characteristic**|**Symbol**|**Value**|**Unit**| |Maximum Thermal Resistance, Junction−to−Case|R�JC|3|°C/W| |Maximum Thermal Resistance, Junction−to−Ambient|R�JA|50|°C/W| |Temperature for Soldering Purposes: 1/8″from Case for 5 Seconds|TL|260|°C| ## **ELECTRICAL CHARACTERISTICS** (Per Leg) |**ELECTRICAL CHARACTERISTICS**(Per Leg)|||| |---|---|---|---| |**Characteristic**|**Symbol**|**Max**|**Unit**| |Maximum Instantaneous Forward Voltage (Note 1)<br>(iF= 8 A, TC= 150°C)<br>(iF= 8 A, TC= 25°C)|vF|0.895<br>0.975|V| |Maximum Instantaneous Reverse Current (Note 1)<br>(Rated DC Voltage, TC= 150°C)<br>(Rated DC Voltage, TC= 25°C)|iR|250<br>5|�A| |Maximum Reverse Recovery Time<br>(IF= 1 A, di/dt = 50 A/�s)<br>(IF= 0.5 A, iR= 1 A, IREC= 0.25 A)|trr|35<br>25|ns| 1. Pulse Test: Pulse Width = 300 � s, Duty Cycle ≤ 2.0% **==> picture [491 x 168] intentionally omitted <==** **----- Start of picture text -----**<br> 100 10 K<br>50<br>1.0 K<br>20 400<br>10 100<br>5.0 20 T J = 175°C<br>2.0 4<br>1.0 TJ = 175°C 100°C 25°C 1 100°C<br>0.7 25°C<br>0.2<br>0.3<br>0.04<br>0.1 0.01<br>0.2 0.4 0.6 0.8 1 1.2 0 20 40 60 80 100 120 140 160 180 200<br>vF, INSTANTANEOUS VOLTAGE (V) VR, REVERSE VOLTAGE (V)<br>μ<br>IR, REVERSE CURRENT (��A)<br>, INSTANTANEOUS FORWARD CURRENT (AMPS)<br>iF<br>**----- End of picture text -----**<br> **Figure 1. Typical Forward Voltage, Per Leg** **Figure 2. Typical Reverse Current, Per Leg*** **http://onsemi.com** **2** ## **MURB1620CTG, NRVUB1620CTT4G** **==> picture [495 x 592] intentionally omitted <==** **----- Start of picture text -----**<br> 10 10<br>RATED VR APPLIED<br>9.0 R�JC = 3°C/W 9.0 TJ = 175°C<br>8.0 8.0<br>DC<br>7.0 7.0<br>SQUARE WAVE<br>6.0 6.0<br>DC<br>5.0 5.0<br>4.0 4.0<br>SQUARE WAVE<br>3.0 3.0<br>2.0 2.0<br>1.0 1.0<br>0<br>140 150 160 170 180 0 0 1 2 3 4 5 6 7 8 9 10<br>TC, CASE TEMPERATURE (°C) IF(AV), AVERAGE FORWARD CURRENT (AMPS)<br>Figure 3. Current Derating Case, Per Leg Figure 4. Power Dissipation, Per Leg<br>1<br>D = 0.5<br>0.5<br>0.2 0.1 P(pk)<br>Z�JC(t) = r(t) R�JC<br>0.1 D curves apply for power<br>0.05<br>pulse train shown<br>0.01<br>0.05 t 1 read time at T1<br>t2<br>SINGLE PULSE Duty Cycle, D = t 1 /t 2 �T J(pk) - T C = P (pk) Z �JC(t)<br>0.02<br>0.01<br>0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10 20 50 100 200 500<br>t, TIME (ms)<br>Figure 5. Thermal Response<br>1 K<br>300<br>TJ = 25°C<br>100<br>30<br>10<br>1 10 100<br>VR, REVERSE VOLTAGE (V)<br>IF(AV), AVERAGE POWER DISSIPATION (WATTS PF(AV), AVERAGE POWER DISSIPATION (WATTS)<br>r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED<br>C, CAPACITANCE (pF)<br>**----- End of picture text -----**<br> **Figure 6. Typical Capacitance, Per Leg** **http://onsemi.com** **3** MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** ## **D[2] PAK 3** CASE 418B−04 **==> picture [442 x 456] intentionally omitted <==** **----- Start of picture text -----**<br> ISSUE L<br>SCALE 1:1 NOTES:<br>C 1. DIMENSIONING AND TOLERANCING<br>PER ANSI Y14.5M, 1982.<br>E 2. CONTROLLING DIMENSION: INCH.<br>−B− V 3. 418B−01 THRU 418B−03 OBSOLETE,NEW STANDARD 418B−04.<br>W<br>4 INCHES MILLIMETERS<br>DIM MIN MAX MIN MAX<br>A 0.340 0.380 8.64 9.65<br>B 0.380 0.405 9.65 10.29<br>A C 0.160 0.190 4.06 4.83<br>S D 0.020 0.035 0.51 0.89<br>1 2 3 E 0.045 0.055 1.14 1.40<br>F 0.310 0.350 7.87 8.89<br>G 0.100 BSC 2.54 BSC<br>−T− H 0.080 0.110 2.03 2.79<br>K J 0.018 0.025 0.46 0.64<br>SEATINGPLANE G J W KL 0.0900.052 0.0720.110 2.291.32 2.791.83<br>M 0.280 0.320 7.11 8.13<br>ae H N 0.197 REF 5.00 REF<br>D 3 PL P 0.079 REF 2.00 REF<br>R 0.039 REF 0.99 REF<br>0.13 (0.005) M T B M S 0.575 0.625 14.60 15.88<br>V 0.045 0.055 1.14 1.40<br>VARIABLE<br>CONFIGURATION<br>ZONE N P<br>R<br>U<br>L L L<br>M M M<br>F F F<br>VIEW W−W VIEW W−W VIEW W−W<br>1 2 3<br>STYLE 1: STYLE 2: STYLE 3: STYLE 4: STYLE 5: STYLE 6:<br>PIN 1. BASE PIN 1. GATE PIN 1. ANODE PIN 1. GATE PIN 1. CATHODE PIN 1. NO CONNECT<br>2. COLLECTOR 2. DRAIN 2. CATHODE 2. COLLECTOR 2. ANODE 2. CATHODE<br>3. EMITTER 3. SOURCE 3. ANODE 3. EMITTER 3. CATHODE 3. ANODE<br>4. COLLECTOR 4. DRAIN 4. CATHODE 4. COLLECTOR 4. ANODE 4. CATHODE<br>**----- End of picture text -----**<br> DATE 17 FEB 2015 ## **MARKING INFORMATION AND FOOTPRINT ON PAGE 2** Electronic versions are uncontrolled except when accessed directly from the Document Repository. **DOCUMENT NUMBER: 98ASB42761B** Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. **DESCRIPTION: D[2] PAK 3 PAGE 1 OF 2** ~~|eee1~~ ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. www.onsemi.com © Semiconductor Components Industries, LLC, 2019 **==> picture [182 x 232] intentionally omitted <==** **----- Start of picture text -----**<br> D [2] PAK 3<br>CASE 418B−04<br>ISSUE L<br>GENERIC<br>MARKING DIAGRAM*<br>xx AYWW<br>xxxxxxxxG<br>xxxxxxxxx xxxxxxxxG<br>AYWW<br>AWLYWWG AKA<br>oe<br>IC Standard Rectifier<br>xx = Specific Device Code<br>A = Assembly Location<br>WL = Wafer Lot<br>Y = Year<br>WW = Work Week<br>G = Pb−Free Package<br>AKA = Polarity Indicator<br>**----- End of picture text -----**<br> DATE 17 FEB 2015 - *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ ”, may or may not be present. ## **SOLDERING FOOTPRINT*** **==> picture [147 x 173] intentionally omitted <==** **----- Start of picture text -----**<br> 10.49<br>8.38<br>16.155 T L 7<br>2X<br>3.504<br>2X<br>UE<br>1.016<br>5.080<br>aro<br>PITCH<br>DIMENSIONS: MILLIMETERS<br>**----- End of picture text -----**<br> *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Electronic versions are uncontrolled except when accessed directly from the Document Repository. **DOCUMENT NUMBER: 98ASB42761B** Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. **DESCRIPTION: D[2] PAK 3 PAGE 2 OF 2** ~~—~~ ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. www.onsemi.com © Semiconductor Components Industries, LLC, 2019 **onsemi** , , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “ **onsemi** ” or its affiliates and/or subsidiaries in the United States and/or other countries. **onsemi** owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of **onsemi’s** product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. **onsemi** reserves the right to make changes at any time to any products or information herein, without notice. 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All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. **onsemi** does not convey any license under any of its intellectual property rights nor the rights of others. **onsemi** products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. 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Updated at June 8, 2026
onsemi is a premier global supplier of intelligent power and sensing technologies, driving disruptive innovations across the automotive, industrial, and cloud infrastructure markets. Recognized for their commitment to sustainability and reliable supply chains, the company accelerates advancements in vehicle electrification, industrial automation, and 5G networks by solving the industry's most complex design challenges. At the core of their portfolio is an industry-leading selection of discrete semiconductors. This extensive range features thousands of high-performance bipolar transistors, single and dual MOSFETs, and a comprehensive array of diodes, including Zener, Schottky, and fast-recovery rectifiers. Engineered for superior thermal performance and energy efficiency, these foundational components are critical for demanding power conversion, switching, and signal conditioning applications. Beyond essential discretes, onsemi provides a robust suite of advanced power management and circuit protection solutions. Their lineup includes intelligent power modules, single IGBTs, and transient voltage suppression (TVS) diodes designed to safeguard sensitive circuitry. Complimented by integrated passive filters, AC/DC LED driver ICs, and specialized sub-2.4GHz RF transceivers, onsemi equips engineers with the scalable, high-quality technologies needed to build a cleaner, smarter, and more connected world.
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