MUR820G

## MUR805G, MUR810G, MUR815G, MUR820G, MUR840G, MUR860G, MURF860G, SUR8820G, SUR8840G 

## Switch-mode Power Rectifiers 

This series is designed for use in switching power supplies, inverters and as free wheeling diodes. 

## **Features** 

- Ultrafast 25 and 50 Nanosecond Recovery Time 

- 175°C Operating Junction Temperature 

- Epoxy Meets UL 94 V−0 @ 0.125 in 

- Low Forward Voltage 

- Low Leakage Current 

- Reverse Voltage to 600 V 

- ESD Ratings: 

   - ♦ Machine Model = C (> 400 V) 

   - ♦ Human Body Model = 3B (> 16,000 V) 

- SUR8 Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable 

- These Devices are Pb−Free and are RoHS Compliant* 

## **Mechanical Characteristics:** 

- Case: Epoxy, Molded 

## **http://onsemi.com** 

**ULTRAFAST RECTIFIERS 8.0 AMPERES, 50−600 VOLTS** 

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1<br>4<br>3 ms<br>. @<br>?<br>TO−220AC TO−220 FULLPAK<br>CASE 221B CASE 221AG<br>STYLE 1 STYLE 1<br>MARKING DIAGRAMS<br>**----- End of picture text -----**<br>


- Weight: 1.9 Grams (Approximately) 

- Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable 

- Lead Temperature for Soldering Purposes: 260°C Max for 10 Seconds 

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AY    WWG AYWWG<br>U8xx<br>MURF860<br>KA<br>KA<br>im<br>A = Assembly Location<br>Y = Year<br>WW = Work Week<br>U8XX = Device Code<br>xx = 05, 10, 15, 20, 40, or 60<br>G = Pb−Free Package<br>KA = Diode Polarity<br>**----- End of picture text -----**<br>


## **ORDERING INFORMATION** 

> *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 

See detailed ordering and shipping information in the package dimensions section on page 7 of this data sheet. 

Publication Order Number: **MUR820/D** 

**1** 

© Semiconductor Components Industries, LLC, 2014 **February, 2014 − Rev. 13** 

## **MUR805G, MUR810G, MUR815G, MUR820G, MUR840G, MUR860G, MURF860G, SUR8820G, SUR8840G** 

## **MAXIMUM RATINGS** 

|**MAXIMUM RATINGS**|||||||||
|---|---|---|---|---|---|---|---|---|
|**Rating**|**Symbol**|**MUR/SUR8**||||||**Unit**|
|||**805**|**810**|**815**|**820**|**840**|**860**||
|Peak Repetitive Reverse Voltage<br>Working Peak Reverse Voltage<br>DC Blocking Voltage|VRRM<br>VRWM<br>VR|50|100|150|200|400|600|V|
|Average Rectified Forward Current<br>Total Device, (Rated VR), TC= 150°C|IF(AV)|8.0||||||A|
|Peak Repetitive Forward Current<br>(Rated VR, Square Wave, 20 kHz), TC= 150°C|IFM|16||||||A|
|Nonrepetitive Peak Surge Current<br>(Surge applied at rated load conditions halfwave, single phase, 60 Hz)|IFSM|100||||||A|
|Operating Junction Temperature and Storage Temperature Range|TJ, Tstg|−65 to +175||||||°C|



Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 

## **THERMAL CHARACTERISTICS** 

|**THERMAL CHARACTERISTICS**|||||||||
|---|---|---|---|---|---|---|---|---|
|**Characteristic**|**Symbol**|**MUR/SUR8**||||||**Unit**|
|||**805**|**810**|**815**|**820**|**840**|**860**||
|Maximum Thermal Resistance, Junction−to−Case|R�JC|3.0||||2.0||°C/W|
|Thermal Resistance, Junction−to−Case<br>MURF860|R�JC|4.75||||||°C/W|
|Thermal Resistance, Junction−to−Ambient|R�JA|73||||||°C/W|
|Thermal Resistance, Junction−to−Ambiente<br>MURF860|R�JA|75||||||°C/W|



## **ELECTRICAL CHARACTERISTICS** 

|**ELECTRICAL CHARACTERISTICS**|||||||||
|---|---|---|---|---|---|---|---|---|
|**Characteristic**|**Symbol**|**MUR/SUR8**||||||**Unit**|
|||**805**|**810**|**815**|**820**|**840**|**860**||
|Maximum Instantaneous Forward Voltage (Note 1)<br>(iF= 8.0 A, TC= 150°C)<br>(iF= 8.0 A, TC= 25°C)|vF|0.895<br>0.975||||1.00<br>1.30|1.20<br>1.50|V|
|Maximum Instantaneous Reverse Current (Note 1)<br>(Rated DC Voltage, TJ= 150°C)<br>(Rated DC Voltage, TJ= 25°C)|iR|250<br>5.0||||500<br>10||�A|
|Maximum Reverse Recovery Time<br>(IF= 1.0 A, di/dt = 50 A/�s)<br>(IF= 0.5 A, iR= 1.0 A, IREC= 0.25 A)|trr|35<br>25||||60<br>50||ns|



Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulse Width = 300 � s, Duty Cycle ≤ 2.0%. 

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**2** 

**MUR805G, MUR810G, MUR815G, MUR820G, MUR840G, MUR860G, MURF860G, SUR8820G, SUR8840G MUR805G, MUR810G, MUR815G, MUR820G, SUR8820G** 

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100<br>70<br>50<br>30<br>20<br>10<br>7.0<br>5.0<br>3.0<br>2.0<br>TJ = 175°C 100°C 25°C<br>1.0<br>0.7<br>0.5<br>0.3<br>0.2<br>0.1<br>0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2<br>vF, INSTANTANEOUS VOLTAGE (VOLTS)<br>, INSTANTANEOUS FORWARD CURRENT (AMPS)<br>iF<br>**----- End of picture text -----**<br>


**Figure 1. Typical Forward Voltage** 

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14<br>R �JA  = 16°C/W<br>12 R� JA  = 60°C/W<br>dc (NO HEAT SINK)<br>10<br>8.0 SQUARE WAVE<br>6.0<br>4.0 dc<br>2.0 SQUARE WAVE<br>0<br>0 20 40 60 80 100 120 140 160 180 200<br>TA, AMBIENT TEMPERATURE (°C)<br>, AVERAGE FORWARD CURRENT (AMPS)<br>IF(AV)<br>**----- End of picture text -----**<br>


**Figure 4. Current Derating, Ambient** 

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1000<br>100 TJ = 175°C<br>10<br>100°C<br>1.0 25°C<br>0.1<br>0.01<br>0 20 40 60 80 100 120 140 160 180 200<br>VR, REVERSE VOLTAGE (VOLTS)<br>Figure 2. Typical Reverse Current*<br>* The curves shown are typical for the highest voltage device in the<br>grouping. Typical reverse current for lower voltage selections can be<br>estimated from these same curves if VR is sufficiently below rated VR.<br>10<br>9.0 RATED VR APPLIED<br>8.0 dc<br>7.0<br>6.0<br>SQUARE WAVE<br>5.0<br>4.0<br>3.0<br>2.0<br>1.0<br>0<br>140 150 160 170 180<br>TC, CASE TEMPERATURE (°C)<br>Figure 3. Current Derating, Case<br>10<br>9.0 T J  = 175°C<br>8.0<br>7.0<br>SQUARE WAVE<br>6.0 dc<br>5.0<br>4.0<br>3.0<br>2.0<br>1.0<br>0<br>0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10<br>IF(AV), AVERAGE FORWARD CURRENT (AMPS)<br>�<br>, REVERSE CURRENT (   A)<br>IR<br>, AVERAGE FORWARD CURRENT (AMPS)<br>IF(AV)<br>, AVERAGE POWER DISSIPATION (WATTS)<br>F(AV)<br>P<br>**----- End of picture text -----**<br>


**Figure 5. Power Dissipation** 

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**3** 

**MUR805G, MUR810G, MUR815G, MUR820G, MUR840G, MUR860G, MURF860G, SUR8820G, SUR8840G MUR840G, SUR8840G** 

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100 1000<br>70 TJ = 175°C<br>100<br>150°C<br>50<br>10 100°C<br>30<br>25°C<br>20 1.0<br>0.1<br>10<br>7.0 0.01<br>0 50 100 150 200 250 300 350 400 450 500<br>5.0 VR, REVERSE VOLTAGE (VOLTS)<br>TJ = 175°C 25°C Figure 7. Typical Reverse Current*<br>3.0 * The curves shown are typical for the highest voltage device in the<br>100°C grouping. Typical reverse current for lower voltage selections can be<br>2.0 estimated from these same curves if VR is sufficiently below rated VR.<br>10<br>1.0 9.0 RATED VR APPLIED<br>8.0 dc<br>0.7<br>7.0<br>0.5 6.0<br>SQUARE WAVE<br>5.0<br>0.3 4.0<br>3.0<br>0.2<br>2.0<br>1.0<br>0.1 0<br>0.4 0.6 0.8 1.0 1.2 1.4 1.6 140 150 160 170 180<br>vF, INSTANTANEOUS VOLTAGE (VOLTS) TC, CASE TEMPERATURE (°C)<br>Figure 6. Typical Forward Voltage Figure 8. Current Derating, Case<br>14 10<br>12 RRR � � JAJAJA  = 16 = 60°°C/WC/W = 60°°C/WC/W°°C/WC/W°C/WC/WC/WC/WC/W 9.0 T J  = 175°C<br>(NO HEAT SINK) 8.0<br>10 dc 7.0 SQUARE WAVE<br>6.0 dc<br>8.0<br>5.0<br>6.0 SQUARE WAVE<br>4.0<br>4.0 dc 3.0<br>2.0<br>2.0 SQUARE WAVE<br>1.0<br>0 0<br>0 20 40 60 80 100 120 140 160 180 200 0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10<br>TA, AMBIENT TEMPERATURE (°C)A, AMBIENT TEMPERATURE (°C), AMBIENT TEMPERATURE (°C)°C)C) IF(AV), AVERAGE FORWARD CURRENT (AMPS)<br>�<br>, REVERSE CURRENT (   A)<br>IR<br>, INSTANTANEOUS FORWARD CURRENT (AMPS)<br>iF<br>, AVERAGE FORWARD CURRENT (AMPS)<br>IF(AV)<br>, AVERAGE FORWARD CURRENT (AMPS) , AVERAGE POWER DISSIPATION (WATTS)<br>IF(AV) PF(AV)<br>**----- End of picture text -----**<br>


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14<br>12 RRR � � JAJAJA  = 16 = 60°°C/WC/W = 60°°C/WC/W°°C/WC/W°C/WC/WC/WC/WC/W<br>(NO HEAT SINK)<br>10 dc<br>8.0<br>6.0 SQUARE WAVE<br>4.0 dc<br>2.0 SQUARE WAVE<br>0<br>0 20 40 60 80 100 120 140 160 180 200<br>TA, AMBIENT TEMPERATURE (°C)A, AMBIENT TEMPERATURE (°C), AMBIENT TEMPERATURE (°C)°C)C)<br>, AVERAGE FORWARD CURRENT (AMPS)<br>IF(AV)<br>**----- End of picture text -----**<br>


**Figure 9. Current Derating, Ambient** 

**Figure 10. Power Dissipation** 

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**4** 

**MUR805G, MUR810G, MUR815G, MUR820G, MUR840G, MUR860G, MURF860G, SUR8820G, SUR8840G MUR860G, MURF860G** 

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100 1000<br>TJ = 150°C TJ = 150°C<br>100<br>100°C<br>10 25°C<br>10<br>100°C<br>1.0<br>1<br>25°C<br>0.1<br>0.1 0.01<br>0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 100 200 300 400 500 600<br>vF, INSTANTANEOUS VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS)<br>�<br>, REVERSE CURRENT (   A)<br>IR<br>, INSTANTANEOUS FORWARD CURRENT (AMPS)<br>iF<br>**----- End of picture text -----**<br>


**Figure 12. Typical Reverse Current*** 

**Figure 11. Typical Forward Voltage** 

* The curves shown are typical for the highest voltage device in the grouping. Typical reverse current for lower voltage selections can be estimated from these same curves if VR is sufficiently below rated VR. 

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10 10<br>9.0 RATED VR APPLIED 9.0 dc RR � � JA JA = 60= 16°°C/WC/W<br>8.0 dc 8.0 (NO HEAT SINK)<br>7.0 7.0<br>6.0 6.0<br>SQUARE WAVE SQUARE WAVE<br>5.0 5.0<br>4.0 4.0<br>dc<br>3.0 3.0<br>2.0 2.0 SQUARE WAVE<br>1.0 1.0<br>0 0<br>140 150 160 170 0 20 40 60 80 100 120 140 160 180 200<br>180<br>TC, CASE TEMPERATURE (°C) TA, AMBIENT TEMPERATURE (°C)<br>Figure 13. Current Derating, Case Figure 14. Current Derating, Ambient<br>14 10,000<br>13<br>12<br>11 SQUARE<br>WAVE<br>10<br>9.0 dc<br>8.0<br>7.0 1,000<br>6.0<br>5.0<br>4.0<br>3.0<br>2.0 TJ = 175 ° C<br>1.0<br>0 100<br>0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10 10 100 1,000 10,000<br>IF(AV), AVERAGE FORWARD CURRENT (AMPS) tp, SQUARE WAVE PULSE DURATION (�s)<br>, AVERAGE FORWARD CURRENT (AMPS) , AVERAGE FORWARD CURRENT (AMPS)<br>IF(AV) IF(AV)<br>, AVERAGE POWER DISSIPATION (WATTS) , NON-REPETITIVE SURGE CURRENT (A)<br>F(AV) IFSM<br>P<br>**----- End of picture text -----**<br>


**Figure 15. Power Dissipation** 

**Figure 16. Typical Non−Repetitive Surge Current** 

* Typical performance based on a limited sample size. ON Semiconductor does not guarantee ratings not listed in the Maximum Ratings table. 

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**5** 

## **MUR805G, MUR810G, MUR815G, MUR820G, MUR840G, MUR860G, MURF860G, SUR8820G, SUR8840G** 

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1.0<br>D = 0.5<br>0.5<br>0.2 0.1<br>0.1 0.050.01 P(pk) ZR��JC(t)JC = 1.5 = r(t°)C/W MAX R�JC<br>0.05 D CURVES APPLY FOR POWER<br>t1 PULSE TRAIN SHOWN<br>SINGLE PULSE t 2 READ TIME AT T 1<br>0.02 DUTY CYCLE, D = t 1 /t 2 T J(pk)  - T C  = P (pk)  Z� JC(t)<br>0.01<br>0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1000<br>t, TIME (ms)<br>Figure 17. Thermal Response<br>10<br>D = 0.5<br>0.2<br>1.0<br>0.1<br>0.05<br>0.02<br>0.1 P(pk) Z�JC(t) = r(t) R�JC<br>0.01 R�JC = 1.6°C/W MAX<br>D CURVES APPLY FOR POWER<br>PULSE TRAIN SHOWN<br>0.01 SINGLE PULSE t1 t2 READ TIME AT t1<br>DUTY CYCLE, D = t 1 /t 2 TJ(pk) - TC = P(pk) Z�JC(t)<br>0.001<br>0.000001 0.00001 0.0001 0.001 0.01 0.1 1.0 10 100 1000<br>t, TIME (s)<br>Figure 18. Thermal Response, (MURF860G) Junction−to−Case (R � JC)<br>100<br>D = 0.5<br>0.2<br>10 0.1<br>0.05<br>0.02<br>1.0<br>0.01<br>P (pk) Z�JC(t) = r(t) R�JC<br>0.1 R�JC = 1.6°C/W MAX<br>D CURVES APPLY FOR POWER<br>PULSE TRAIN SHOWN<br>0.01 SINGLE PULSE t1 t2 READ TIME AT t1<br>DUTY CYCLE, D = t1/t2 T J(pk)  - T C  = P (pk)  Z� JC (t)<br>0.001<br>0.000001 0.00001 0.0001 0.001 0.01 0.1 1.0 10 100 1000<br>t, TIME (s)<br>r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)<br>C/W)<br>°<br>(NORMALIZED) (<br>r(t), TRANSIENT THERMAL RESPONSE<br>C/W)<br>°<br>(NORMALIZED) (<br>r(t), TRANSIENT THERMAL RESPONSE<br>**----- End of picture text -----**<br>


**Figure 19. Thermal Response, (MURF860G) Junction−to−Ambient (R � JA)** 

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**6** 

## **MUR805G, MUR810G, MUR815G, MUR820G, MUR840G, MUR860G, MURF860G, SUR8820G, SUR8840G** 

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1000<br>500 TJ = 25°C<br>200<br>100<br>50<br>20<br>10<br>1.0 2.0 5.0 10 20 50 100<br>VR, REVERSE VOLTAGE (V)<br>C, CAPACITANCE (pF)<br>**----- End of picture text -----**<br>


**Figure 20. Typical Capacitance** 

## **ORDERING INFORMATION** 

|**ORDERING INFORMATION**|||
|---|---|---|
|**Device**|**Package**|**Shipping**|
|MUR805G|TO−220AC<br>(Pb−Free)|50 Units / Rail|
|MUR810G|TO−220AC<br>(Pb−Free)|50 Units / Rail|
|MUR815G|TO−220AC<br>(Pb−Free)|50 Units / Rail|
|MUR820G|TO−220AC<br>(Pb−Free)|50 Units / Rail|
|SUR8820G|TO−220AC<br>(Pb−Free)|50 Units / Rail|
|MUR840G|TO−220AC<br>(Pb−Free)|50 Units / Rail|
|SUR8840G|TO−220AC<br>(Pb−Free)|50 Units / Rail|
|MUR860G|TO−220AC<br>(Pb−Free)|50 Units / Rail|
|MURF860G|TO−220FP<br>(Pb−Free)|50 Units / Rail|



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MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** 

**TO−220 FULLPACK, 2−LEAD** CASE 221AG ISSUE B 

## DATE 27 AUG 2015 

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NOTES:<br>1. DIMENSIONING AND TOLERANCING PER ASME<br>A B SEATINGPLANE Y14.5M, 1994.<br>E 2. CONTROLLING DIMENSION: MILLIMETERS.<br>A 3. CONTOUR UNCONTROLLED IN THIS AREA.<br>E/2 P H1 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH<br>SCALE 1:1 0.14 M B A M A1 AND GATE PROTRUSIONS. MOLD FLASH AND GATEPROTRUSIONS NOT TO EXCEED 0.13 PER SIDE. THESE<br>4 DIMENSIONS ARE TO BE MEASURED AT OUTERMOST<br>Q 4 EXTREME OF THE PLASTIC BODY.<br>D 5. DIMENSION b2 DOES NOT INCLUDE DAMBAR<br>C PROTRUSION. LEAD WIDTH INCLUDING PROTRUSION<br>1 2 3 NOTE 3 SHALL NOT EXCEED 2.00.<br>MILLIMETERS<br>DIM MIN MAX<br>A 4.30 4.70<br>L L1 A1 2.50 2.90<br>A2 2.50 2.90<br>b 0.54 0.84<br>b2 1.10 1.40<br>3X b c c 0.49 0.79<br>3X b2 0.25 M B A M C A2 DE 14.229.65 10.6715.88<br>e e 2.54 BSC<br>e1 > | SIDE VIEW a H1e1 6.405.08 BSC6.90<br>TOP VIEW == L 12.70 14.73<br>L1 --- 2.80<br>P 3.00 3.40<br>A Q 2.80 3.20<br>NOTE 6<br>NOTE 6 GENERIC<br>H1<br>MARKING DIAGRAM*<br>D D O°<br>oe : E+ 4<br>XX<br>A SECTION A−A XXXXXXXXX<br>ALTERNATE AWLYWWG<br>CONSTRUCTION<br>SECTION D−D 1<br>A = Assembly Location<br>WL = Wafer Lot<br>Y = Year<br>WW = Work Week<br>G = Pb−Free Package<br>**----- End of picture text -----**<br>


- *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ ”, may or may not be present. 

**DOCUMENT NUMBER: 98AON52563E DESCRIPTION: TO−220 FULLPACK, 2−LEAD** [[_ 

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ON Semiconductor and          are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. 

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© Semiconductor Components Industries, LLC, 2019 

MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** 

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TO−220, 2−LEAD<br>CASE 221B−04<br>ISSUE F<br>DATE 12 APR 2013<br>o<br>NOTES:<br>C 1. DIMENSIONING AND TOLERANCING PER ANSI<br>Y14.5M, 1982.<br>Q B F T S 2. CONTROLLING DIMENSION: INCH.<br>INCHES MILLIMETERS<br>DIM MIN MAX MIN MAX<br>SCALE 1:1 4 A 0.595 0.620 15.11 15.75<br>B 0.380 0.405 9.65 10.29<br>ae A Lt Bobs, C 0.160 0.190 4.06 4.82<br>U D 0.025 0.039 0.64 1.00<br>1 3 F 0.142 0.161 3.61 4.09<br>H G 0.190 0.210 4.83 5.33<br>H 0.110 0.130 2.79 3.30<br>K J 0.014 0.025 0.36 0.64<br>K 0.500 0.562 12.70 14.27<br>L 0.045 0.060 1.14 1.52<br>Q 0.100 0.120 2.54 3.04<br>L R 0.080 0.110 2.04 2.79<br>D R S 0.045 0.055 1.14 1.39<br>T 0.235 0.255 5.97 6.48<br>G J U 0.000 0.050 0.000 1.27<br>STYLE 1: STYLE 2:<br>PIN 1. CATHODE PIN 1. ANODE<br> 2. N/A  2. N/A<br> 3. ANODE  3. CATHODE<br> 4. CATHODE  4. ANODE<br>**----- End of picture text -----**<br>


**DOCUMENT NUMBER: 98ASB42149B DESCRIPTION: TO−220, 2−LEAD** ~~_~~ 

Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed  versions are uncontrolled  except when stamped  “CONTROLLED COPY” in red. 

**PAGE 1 OF 1** 

ON Semiconductor and          are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. 

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