MUR8100EG
Fast / Ultrafast Diode, 1 kV, 8 A, Single, 1.8 V, 75 ns, 100 A
- Manufacturer: ONSEMI
- Product type: Fast & Ultrafast Recovery Rectifier Diodes
- Repetitive Reverse Voltage Vrrm Max:1kV; Forward Current If(AV):8A; Diode Configuration:Single; Forward Voltage VF Max:1.8V; Reverse Recovery Time trr Max:75ns; Forward Surge Current Ifsm Max
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 2 Pin
- Product Range: -
- Qualification: -
- Diode Case Style: TO-220AC
- Diode Configuration: Single
- Forward Voltage Max: 1.8V
- Forward Surge Current: 100A
- Reverse Recovery Time: 75ns
- Average Forward Current: 8A
- Operating Temperature Max: 175°C
- Repetitive Peak Reverse Voltage: 1kV
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 0.65 € |
| Current stock | 1000+ |
| Lead time | 30 days |
**MUR8100E is a Preferred Device** ## MUR8100E, MUR880E ## SWITCHMODE Power Rectifiers ## **Ultrafast “E’’ Series with High Reverse Energy Capability** The MUR8100 and MUR880E diodes are designed for use in switching power supplies, inverters and as free wheeling diodes. ## **Features** - 20 mJ Avalanche Energy Guaranteed - Excellent Protection Against Voltage Transients in Switching Inductive Load Circuits - Ultrafast 75 Nanosecond Recovery Time - 175°C Operating Junction Temperature - Popular TO−220 Package - Epoxy Meets UL 94 V−0 @ 0.125 in. - Low Forward Voltage - Low Leakage Current - High Temperature Glass Passivated Junction - Reverse Voltage to 1000 V - Pb−Free Packages are Available* ## **Mechanical Characteristics:** - Case: Epoxy, Molded - Weight: 1.9 Grams (Approximately) - Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable - Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds ## **http://onsemi.com** **ULTRAFAST RECTIFIERS 8.0 A, 800 V − 1000 V** **==> picture [118 x 346] intentionally omitted <==** **----- Start of picture text -----**<br> 1<br>4<br>3 at<br>% 4<br>TO−220AC<br>CASE 221B<br>1<br>3<br>MARKING DIAGRAM<br>OO|<br>AY WWG<br>U8xxxE<br>KA<br>)<br>A = Assembly Location<br>Y = Year<br>WW = Work Week<br>G = Pb−Free Package<br>U8xxxE = Device Code<br>xxx = 100 or 80<br>KA = Diode Polarity<br>**----- End of picture text -----**<br> ## **ORDERING INFORMATION** |**Device**|**Package**|**Shipping**| |---|---|---| |MUR8100E|TO−220|50 Units / Rail| |MUR8100EG|TO−220<br>(Pb−Free)|50 Units / Rail| |MUR880E|TO−220|50 Units / Rail| |MUR880EG|TO−220<br>(Pb−Free)|50 Units / Rail| > *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. **Preferred** devices are recommended choices for future use and best overall value. Publication Order Number: **MUR8100E/D** **1** © Semiconductor Components Industries, LLC, 2008 **June, 2008 − Rev. 4** **MUR8100E, MUR880E** ## **MAXIMUM RATINGS** |**MAXIMUM RATINGS**|||| |---|---|---|---| |**Rating**|**Symbol**|**Value**|**Unit**| |Peak Repetitive Reverse Voltage<br>Working Peak Reverse Voltage<br>DC Blocking Voltage<br>MUR880E<br>MUR8100E|VRRM<br>VRWM<br>VR|800<br>1000|V| |Average Rectified Forward Current<br>(Rated VR, TC= 150°C) Total Device|IF(AV)|8.0|A| |Peak Repetitive Forward Current<br>(Rated VR, Square Wave, 20 kHz, TC= 150°C)|IFM|16|A| |Non−Repetitive Peak Surge Current<br>(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)|IFSM|100|A| |Operating Junction and Storage Temperature Range|TJ, Tstg|−65 to +175|°C| Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. ## **THERMAL CHARACTERISTICS** |**THERMAL CHARACTERISTICS**|||| |---|---|---|---| |**Characteristic**|**Symbol**|**Value**|**Unit**| |Maximum Thermal Resistance, Junction−to−Case|R�JC|2.0|°C/W| |**ELECTRICAL CHARACTERISTICS**|||| |**Characteristic**|**Symbol**|**Value**|**Unit**| |Maximum Instantaneous Forward Voltage (Note 1)<br>(iF= 8.0 A, TC= 150°C)<br>(iF= 8.0 A, TC= 25°C)|vF|1.5<br>1.8|V| |Maximum Instantaneous Reverse Current (Note 1)<br>(Rated DC Voltage, TC= 100°C)<br>(Rated DC Voltage, TC= 25°C)|iR|500<br>25|�A| |Maximum Reverse Recovery Time<br>(IF= 1.0 A, di/dt = 50 A/�s)<br>(IF= 0.5 A, iR= 1.0 A, IREC= 0.25 A)|trr|100<br>75|ns| |Controlled Avalanche Energy<br>(See Test Circuit in Figure 6)|WAVAL|20|mJ| 1. Pulse Test: Pulse Width = 300 � s, Duty Cycle ≤ 2.0%. **http://onsemi.com** **2** **MUR8100E, MUR880E** **==> picture [489 x 401] intentionally omitted <==** **----- Start of picture text -----**<br> 100 10,000<br>* The curves shown are typical for the highest voltage device in the voltage<br>* grouping. Typical reverse current for lower voltage selections can be<br>70 1000 * estimated from these same curves if VR is sufficiently below rated VR.<br>50<br>100 175°C<br>150°C<br>30<br>10<br>20 100°C<br>1.0<br>10 0.1 T J = 25°C<br>7.0 TJ = 175°C 0.01<br>100°C 0 200 400 600 800 1000<br>5.0 25°C VR, REVERSE VOLTAGE (VOLTS)<br>3.0 Figure 2. Typical Reverse Current*<br>2.0<br>10<br>9.0 RATED VR APPLIEDR APPLIED APPLIED<br>1.0<br>8.0<br>0.7 7.0 dc<br>0.5 6.0 SQUARE WAVE<br>5.0<br>0.3 4.0<br>3.0<br>0.2<br>2.0<br>1.0<br>0.1 0<br>0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 140 150 160 170 180<br>vF, INSTANTANEOUS VOLTAGE (VOLTS) TC, CASE TEMPERATURE (°C)C, CASE TEMPERATURE (°C), CASE TEMPERATURE (°C)°C)C)<br>�<br>, REVERSE CURRENT ( A)<br>IR<br>iF, INSTANTANEOUS FORWARD CURRENT (AMPS)<br>, AVERAGE FORWARD CURRENT (AMPS)<br>IF(AV)F(AV)<br>**----- End of picture text -----**<br> **==> picture [239 x 173] intentionally omitted <==** **----- Start of picture text -----**<br> 10<br>9.0 RATED VR APPLIEDR APPLIED APPLIED<br>8.0<br>7.0 dc<br>6.0 SQUARE WAVE<br>5.0<br>4.0<br>3.0<br>2.0<br>1.0<br>0<br>140 150 160 170 180<br>TC, CASE TEMPERATURE (°C)C, CASE TEMPERATURE (°C), CASE TEMPERATURE (°C)°C)C)<br>, AVERAGE FORWARD CURRENT (AMPS)<br>IF(AV)F(AV)<br>**----- End of picture text -----**<br> **Figure 3. Current Derating, Case** **Figure 1. Typical Forward Voltage** **==> picture [238 x 174] intentionally omitted <==** **----- Start of picture text -----**<br> 10<br>9.0 R �JA = 16°C/W<br>8.0 R �JA = 60°C/W<br>(No Heat Sink)<br>7.0 dc<br>6.0<br>5.0 SQUARE WAVE<br>4.0<br>3.0 dc<br>2.0<br>1.0 SQUARE WAVE<br>0<br>0 20 40 60 80 100 120 140 160 180 200<br>TA, AMBIENT TEMPERATURE (°C)<br>, AVERAGE FORWARD CURRENT (AMPS)<br>IF(AV)<br>**----- End of picture text -----**<br> **Figure 4. Current Derating, Ambient** **==> picture [237 x 177] intentionally omitted <==** **----- Start of picture text -----**<br> 14<br>TJ = 175°C<br>12<br>SQUARE WAVE<br>10<br>dc<br>8.0<br>6.0<br>4.0<br>2.0<br>0<br>0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10<br>IF(AV), AVERAGE FORWARD CURRENT (AMPS)<br>PF(AV), AVERAGE POWER DISSIPATION (WATTS)<br>**----- End of picture text -----**<br> **Figure 5. Power Dissipation** **http://onsemi.com** **3** **MUR8100E, MUR880E** **==> picture [492 x 203] intentionally omitted <==** **----- Start of picture text -----**<br> +VDD<br>IL 40 �H COIL<br>BVDUT<br>VD<br>ID<br>MERCURY<br>SWITCH ID<br>IL<br>DUT<br>S1<br>VDD<br>t0 t1 t2 t<br>**----- End of picture text -----**<br> **Figure 6. Test Circuit** **Figure 7. Current−Voltage Waveforms** The unclamped inductive switching circuit shown in Figure 6 was used to demonstrate the controlled avalanche capability of the new “E’’ series Ultrafast rectifiers. A mercury switch was used instead of an electronic switch to simulate a noisy environment when the switch was being opened. When S1 is closed at t0 the current in the inductor IL ramps up linearly; and energy is stored in the coil. At t1 the switch is opened and the voltage across the diode under test begins to rise rapidly, due to di/dt effects, when this induced voltage reaches the breakdown voltage of the diode, it is clamped at BVDUT and the diode begins to conduct the full load current which now starts to decay linearly through the diode, and goes to zero at t2. By solving the loop equation at the point in time when S1 is opened; and calculating the energy that is transferred to the diode it can be shown that the total energy transferred is equal to the energy stored in the inductor plus a finite amount of energy from the VDD power supply while the diode is in breakdown (from t1 to t2) minus any losses due to finite component resistances. Assuming the component resistive elements are small Equation (1) approximates the total energy transferred to the diode. It can be seen from this equation that if the VDD voltage is low compared to the breakdown voltage of the device, the amount of energy contributed by the supply during breakdown is small and the total energy can be assumed to be nearly equal to the energy stored in the coil during the time when S1 was closed, Equation (2). The oscilloscope picture in Figure 8, shows the MUR8100E in this test circuit conducting a peak current of one ampere at a breakdown voltage of 1300 V, and using Equation (2) the energy absorbed by the MUR8100E is approximately 20 mjoules. Although it is not recommended to design for this condition, the new “E’’ series provides added protection against those unforeseen transient viruses that can produce unexplained random failures in unfriendly environments. **==> picture [446 x 167] intentionally omitted <==** **----- Start of picture text -----**<br> EQUATION (1): CHANNEL 2:<br>CH1 500V A 20 � s 953 V VERT IL<br>BVDUT CH2 50mV 0.5 AMPS/DIV.<br>LI [2]<br>WAVAL � [1] 2 LPK [�] BVDUTVDD �<br>CHANNEL 1:<br>VDUT<br>EQUATION (2): 500 VOLTS/DIV.<br>LI [2]<br>WAVAL � [1] 2 LPK<br>TIME BASE:<br>20 �s/DIV.<br>1 ACQUISITIO N S 217:33 HRS<br>SAVEREF SOU R CE STACK<br>CH1 CH2 REF REF<br>**----- End of picture text -----**<br> **Figure 8. Current−Voltage Waveforms** **http://onsemi.com** **4** **MUR8100E, MUR880E** **==> picture [489 x 173] intentionally omitted <==** **----- Start of picture text -----**<br> 1.0<br>0.7 D = 0.5<br>0.5<br>0.3<br>0.2<br>0.1<br>0.1 P(pk) Z �JC (t) = r(t) R �JC<br>0.05 R �JC = 1.5°C/W MAX<br>0.07<br>D CURVES APPLY FOR POWER<br>0.05<br>0.01 t 1 PULSE TRAIN SHOWN<br>0.03 t 2 READ TIME AT t1<br>0.02 SINGLE PULSE DUTY CYCLE, D = t 1 /t 2 T J(pk) - T C = P (pk) Z �JC (t)<br>0.01<br>0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1000<br>t, TIME (ms)<br>(NORMALIZED)<br>r(t), TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br> **Figure 9. Thermal Response** **==> picture [242 x 174] intentionally omitted <==** **----- Start of picture text -----**<br> 1000<br>TJ = 25°C<br>300<br>100<br>30<br>10<br>1.0 10 100<br>VR, REVERSE VOLTAGE (VOLTS)<br>C, CAPACITANCE (pF)<br>**----- End of picture text -----**<br> **Figure 10. Typical Capacitance** SWITCHMODE is a trademark of Semiconductor Components Industries, LLC. **http://onsemi.com** **5** MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** **==> picture [470 x 282] intentionally omitted <==** **----- Start of picture text -----**<br> TO−220, 2−LEAD<br>CASE 221B−04<br>ISSUE F<br>DATE 12 APR 2013<br>o<br>NOTES:<br>C 1. DIMENSIONING AND TOLERANCING PER ANSI<br>Y14.5M, 1982.<br>Q B F T S 2. CONTROLLING DIMENSION: INCH.<br>INCHES MILLIMETERS<br>DIM MIN MAX MIN MAX<br>SCALE 1:1 4 A 0.595 0.620 15.11 15.75<br>B 0.380 0.405 9.65 10.29<br>ae A Lt Bobs, C 0.160 0.190 4.06 4.82<br>U D 0.025 0.039 0.64 1.00<br>1 3 F 0.142 0.161 3.61 4.09<br>H G 0.190 0.210 4.83 5.33<br>H 0.110 0.130 2.79 3.30<br>K J 0.014 0.025 0.36 0.64<br>K 0.500 0.562 12.70 14.27<br>L 0.045 0.060 1.14 1.52<br>Q 0.100 0.120 2.54 3.04<br>L R 0.080 0.110 2.04 2.79<br>D R S 0.045 0.055 1.14 1.39<br>T 0.235 0.255 5.97 6.48<br>G J U 0.000 0.050 0.000 1.27<br>STYLE 1: STYLE 2:<br>PIN 1. CATHODE PIN 1. ANODE<br> 2. N/A 2. N/A<br> 3. ANODE 3. CATHODE<br> 4. CATHODE 4. ANODE<br>**----- End of picture text -----**<br> **DOCUMENT NUMBER: 98ASB42149B DESCRIPTION: TO−220, 2−LEAD** ~~_~~ Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. **PAGE 1 OF 1** ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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This literature is subject to all applicable copyright laws and is not for resale in any manner. ## **PUBLICATION ORDERING INFORMATION** **LITERATURE FULFILLMENT** : **TECHNICAL SUPPORT Email Requests to:** orderlit@onsemi.com **North American Technical Support: Europe, Middle East and Africa Technical Support:** Voice Mail: 1 800−282−9855 Toll Free USA/Canada Phone: 00421 33 790 2910 **onsemi Website:** www.onsemi.com Phone: 011 421 33 790 2910 For additional information, please contact your local Sales Representative ◊ **==> picture [232 x 43] intentionally omitted <==**
Updated at June 8, 2026
onsemi is a premier global supplier of intelligent power and sensing technologies, driving disruptive innovations across the automotive, industrial, and cloud infrastructure markets. Recognized for their commitment to sustainability and reliable supply chains, the company accelerates advancements in vehicle electrification, industrial automation, and 5G networks by solving the industry's most complex design challenges. At the core of their portfolio is an industry-leading selection of discrete semiconductors. This extensive range features thousands of high-performance bipolar transistors, single and dual MOSFETs, and a comprehensive array of diodes, including Zener, Schottky, and fast-recovery rectifiers. Engineered for superior thermal performance and energy efficiency, these foundational components are critical for demanding power conversion, switching, and signal conditioning applications. Beyond essential discretes, onsemi provides a robust suite of advanced power management and circuit protection solutions. Their lineup includes intelligent power modules, single IGBTs, and transient voltage suppression (TVS) diodes designed to safeguard sensitive circuitry. Complimented by integrated passive filters, AC/DC LED driver ICs, and specialized sub-2.4GHz RF transceivers, onsemi equips engineers with the scalable, high-quality technologies needed to build a cleaner, smarter, and more connected world.
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