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MUR805G.
Fast / Ultrafast Diode, 50 V, 8 A, Single, 975 mV, 35 ns, 100 A
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- Manufacturer: ONSEMI
- Product type: Fast & Ultrafast Recovery Rectifier Diodes
- SVHC: Lead (19-Jan-2021)
- No. of Pins: 2 Pin
- Product Range: -
- Qualification: -
- Diode Case Style: TO-220AC
- Diode Configuration: Single
- Forward Voltage Max: 975mV
- Forward Surge Current: 100A
- Reverse Recovery Time: 35ns
- Average Forward Current: 8A
- Operating Temperature Max: 175°C
- Repetitive Peak Reverse Voltage: 50V
| Delivery and price | |
|---|---|
| Units per pack | 500 |
| Price | 0.457 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
**Share Feedback DATA SHEET** Your Opinion Matters **www.onsemi.com** ~~ee~~ ## Switch-mode Power Rectifiers ## MUR810G, MUR815G, MUR820G, MUR840G, MUR860G, MURF860G, This series is designed for use in switching power supplies, inverters and as free wheeling diodes. ## **Features** - Ultrafast 25 and 50 Nanosecond Recovery Time - 175 C Operating Junction Temperature - Epoxy Meets UL 94 V−0 @ 0.125 in - Low Forward Voltage - Low Leakage Current - Reverse Voltage to 600 V - ESD Ratings: - Machine Model = C (> 400 V) - Human Body Model = 3B (> 16,000 V) - SUR8 Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable - These Devices are Pb−Free and are RoHS Compliant* ## **Mechanical Characteristics:** - Case: Epoxy, Molded - Weight: 1.9 Grams (Approximately) - Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable - Lead Temperature for Soldering Purposes: 260 C Max for 10 Seconds ## **ULTRAFAST RECTIFIERS 8.0 AMPERES, 50−600 VOLTS** **==> picture [150 x 415] intentionally omitted <==** **----- Start of picture text -----**<br> 1<br>4<br>3 at<br>. 2<br>» #F<br>TO−220AC TO−220 FULLPAK<br>CASE 221B CASE 221AG<br>STYLE 1 STYLE 1<br>MARKING DIAGRAM<br>pO} [oO<br>AY WWG AYWWG<br>U8xx<br>MURF860<br>KA<br>KA<br>OL<br>A = Assembly Location<br>Y = Year<br>WW = Work Week<br>U8XX = Device Code<br>xx = 05, 10, 15, 20, 40, or 60<br>G = Pb−Free Package<br>KA = Diode Polarity<br>**----- End of picture text -----**<br> ## **ORDERING INFORMATION** See detailed ordering and shipping information in the package dimensions section on page 7 of this data sheet. NOTE: Some of the device on this data sheet have been **DISCONTINUED** . Please refer to the table on page 7 > *For additional information on our Pb−Free strategy and soldering details, please download the **onsemi** Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Publication Order Number: **MUR820/D** **1** Semiconductor Components Industries, LLC, 2014 **January, 2025 − Rev. 14** **MUR810G, MUR815G, MUR820G, MUR840G, MUR860G, MURF860G,** ## **MAXIMUM RATINGS** |**MAXIMUM RATINGS**||||||||| |---|---|---|---|---|---|---|---|---| |**Rating**|**Symbol**|**MUR/SUR8**||||||**Unit**| |||**805**|**810**|**815**|**820**|**840**|**860**|| |Peak Repetitive Reverse Voltage<br>Working Peak Reverse Voltage<br>DC Blocking Voltage|VRRM<br>VRWM<br>VR|50|100|150|200|400|600|V| |Average Rectified Forward Current<br>Total Device, (Rated VR), TC= 150C|IF(AV)|8.0||||||A| |Peak Repetitive Forward Current<br>(Rated VR, Square Wave, 20 kHz), TC= 150C|IFM|16||||||A| |Nonrepetitive Peak Surge Current<br>(Surge applied at rated load conditions halfwave, single phase, 60 Hz)|IFSM|100||||||A| |Operating Junction Temperature and Storage Temperature Range|TJ, Tstg|−65 to +175||||||C| Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ## **THERMAL CHARACTERISTICS** |**Characteristic**<br>**Symbol**<br>**MUR/SUR8**<br>**Unit**<br>**805**<br>**810**<br>**815**<br>**820**<br>**840**<br>**860**<br>Maximum Thermal Resistance, Junction−to−Case<br>R JC<br>3.0<br>2.0<br>C/W<br>Thermal Resistance, Junction−to−Case<br>MURF860<br>R JC<br>4.75<br>C/W<br>Thermal Resistance, Junction−to−Ambient<br>R JA<br>73<br>C/W<br>Thermal Resistance, Junction−to−Ambiente<br>MURF860<br>R JA<br>75<br>C/W<br>~~ee ee~~<br>~~a~~<br>~~ee~~<br>~~ee~~<br>~~a~~<br>~~eo~~| |---| |**ELECTRICAL CHARACTERISTICS**| |**Characteristic**<br>**Symbol**<br>**MUR/SUR8**<br>**Unit**<br>**805**<br>**810**<br>**815**<br>**820**<br>**840**<br>**860**<br>Maximum Instantaneous Forward Voltage (Note 1)<br>(iF= 8.0 A, TC= 150C)<br>(iF= 8.0 A, TC= 25C)<br>vF<br>0.895<br>0.975<br>1.00<br>1.30<br>1.20<br>1.50<br>V<br>Maximum Instantaneous Reverse Current (Note 1)<br>(Rated DC Voltage, TJ= 150C)<br>(Rated DC Voltage, TJ= 25C)<br>iR<br>250<br>5.0<br>500<br>10<br>A<br>Maximum Reverse Recovery Time<br>(IF= 1.0 A, di/dt = 50 A/ s)<br>(IF= 0.5 A, iR= 1.0 A, IREC= 0.25 A)<br>trr<br>35<br>25<br>60<br>50<br>ns<br>Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product<br>~~ee ee~~<br>~~ae~~<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~| |performance may not be indicated by the Electrical Characteristics if operated under different conditions.| |1. Pulse Test: Pulse Width = 300 s, Duty Cycle2.0%.| **www.onsemi.com 2** ~~—~~ **Share Feedback** Your Opinion Matters **MUR810G, MUR815G, MUR820G, MUR840G, MUR860G, MURF860G,** ## **MUR805G, MUR810G, MUR815G, MUR820G, SUR8820G** **==> picture [492 x 629] intentionally omitted <==** **----- Start of picture text -----**<br> 100 1000<br>70 aee 100 eS TJ = 175 C a<br>50<br>FREESE 6 10 S S 100 C S<br>30 HCCC<br>EC 7, SSS e e<br>20 1.0 25 C<br>SOY e e e<br>0.1<br>10<br>ft | | A ae has<br>7.0 i 0.01 PE<br>a ee ee ee ee i 0 20 40 60 80 100 120 140 160 180 200<br>5.0 Po | | | | | | | CT CE UTI 7 Tf fT | Figure 2. Typical Reverse Current* VR, REVERSE VOLTAGE (VOLTS)<br>3.0 * The curves shown are typical for the highest voltage device in the<br>ee<br>grouping. Typical reverse current for lower voltage selections can be<br>2.0 Pi [tee] estimated from these same curves if VR is sufficiently below rated VR.<br>TJ = 175 C 100 C 25 C 10<br>1.0 Se OTP 9.0 PP RATED VR APPLIED<br>8.0 dc<br>0.7<br>pePR 7.0 et<br>0.5 6.0<br>SQUARE WAVE<br>POPPA 5.0 NR<br>0.3 II 4.0 E R<br>3.0<br>0.2<br>EE 2.0<br>1.0<br>0.1 0<br>0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 EY 1.1 1.2 Oe 140 150 160 170 180<br>vF, INSTANTANEOUS VOLTAGE (VOLTS) TC, CASE TEMPERATURE ( C)<br>Figure 1. Typical Forward Voltage Figure 3. Current Derating, Case<br>14 10<br>12 a RR JAJA = 16 = 60 C/WC/W 9.0 T J = 175 C ee<br>dc (NO HEAT SINK) 8.0<br>SSS Pe<br>10 7.0<br>SQUARE WAVE<br>8.0 SQUARE WAVE 6.0 dc<br>5.0<br>6.04.0 HSERSS dc ee 4.03.0 EEEOO Eee2<br>aN 2.0<br>2.0 SQUARE WAVE<br>Sm 1.0<br>0 0<br>Po TSTee ir tT | | | dT dT dT |<br>0 20 40 60 80 100 120 140 160 180 200 0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10<br>TA, AMBIENT TEMPERATURE ( C) IF(AV), AVERAGE FORWARD CURRENT (AMPS)<br>Figure 4. Current Derating, Ambient Figure 5. Power Dissipation<br>A)<br>, REVERSE CURRENT (<br>IR<br>, INSTANTANEOUS FORWARD CURRENT (AMPS)<br>iF<br>, AVERAGE FORWARD CURRENT (AMPS)<br>IF(AV)<br>, AVERAGE FORWARD CURRENT (AMPS) , AVERAGE POWER DISSIPATION (WATTS)<br>IF(AV) PF(AV)<br>**----- End of picture text -----**<br> **www.onsemi.com 3** ~~OO~~ **www.onsemi.com** **Share Feedback** Your Opinion Matters **MUR810G, MUR815G, MUR820G, MUR840G, MUR860G, MURF860G,** ## **MUR840G, SUR8840G** **==> picture [492 x 629] intentionally omitted <==** **----- Start of picture text -----**<br> 100 1000<br>70 TJ = 175 C<br>PotSe | | | tl tT | tt 100 =———————re ee ee eee eeea 150 C<br>50<br>FSS = a<br>10 100 C<br>30<br>TTT eeSSaae= 25 C<br>20 PL 1.0 =<br>pitti tt | Aeae —eee e ee e<br>0.1<br>7.010 SRRRGE/4)oe 4 0.01 _—_—_=<br>Pot | | | ae TAT YT A | 0 a 50 100 150 200 250 300 350 400 450 500<br>5.0 VR, REVERSE VOLTAGE (VOLTS)<br>Samay TJ = 175 C e40,anne 25 C Figure 7. Typical Reverse Current*<br>3.0 * The curves shown are typical for the highest voltage device in the<br>oA 100 C Peo grouping. Typical reverse current for lower voltage selections can be<br>2.0 PLLAREA EEL estimated from these same curves if VR is sufficiently below rated VR.<br>COO<br>10<br>1.0 9.0 RATED VR APPLIED<br>PETA VE VET ET EL 8.0 poppe dc tf<br>0.50.7 a eee eea 7.06.0 ———TNPA |NOA<br>SQUARE WAVE<br>5.0<br>0.3 HRS 4.0 o S<br>3.0<br>0.2<br>CA E E<br>2.0<br>A<br>1.0<br>0.1 AAA EEE 0 eee<br>0.4 0.6 0.8 1.0 1.2 1.4 1.6 140 150 160 170 180<br>vF, INSTANTANEOUS VOLTAGE (VOLTS) TC, CASE TEMPERATURE ( C)<br>Figure 6. Typical Forward Voltage Figure 8. Current Derating, Case<br>14 10<br>12 ro, RR JAJA = 16 = 60 C/WC/W 9.0 T J = 175 C TEE<br>(NO HEAT SINK) 8.0<br>10 dc 7.0 SQUARE WAVE<br>6.0 dc<br>8.0<br>5.0<br>6.0 RRS SQUARE WAVE we 4.0 EeeZ|<br>4.0 dc 3.0<br>HESS PO<br>2.0<br>ee | |Pee<br>2.0 SQUARE WAVE<br>PRS 1.0 |<br> sses jt<br>0 0<br>iS sr tT | | | dT PT Tt<br>0 20 40 60 80 100 120 140 160 180 200 0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10<br>TA, AMBIENT TEMPERATURE ( C) IF(AV), AVERAGE FORWARD CURRENT (AMPS)<br>Figure 9. Current Derating, Ambient Figure 10. Power Dissipation<br>A)<br>, REVERSE CURRENT (<br>IR<br>, INSTANTANEOUS FORWARD CURRENT (AMPS)<br>iF<br>, AVERAGE FORWARD CURRENT (AMPS)<br>IF(AV)<br>, AVERAGE FORWARD CURRENT (AMPS) , AVERAGE POWER DISSIPATION (WATTS)<br>IF(AV) PF(AV)<br>**----- End of picture text -----**<br> **www.onsemi.com 4** ~~—_—~~ **Share Feedback** Your Opinion Matters **MUR810G, MUR815G, MUR820G, MUR840G, MUR860G, MURF860G,** ## **MUR860G, MURF860G** **==> picture [491 x 174] intentionally omitted <==** **----- Start of picture text -----**<br> 100 1000<br>TJ = 150 C TJ = 150 C<br>100<br>a ee ee eee 100 C P| a | ee a ee ee<br>10 RSS ees 25 C =eee-—_=<br>pj | | | | | ere —————<br>10<br>SSREee ee 100 C<br>| | +44 tf + 1.0 ee<br>1<br>A eS SS SSS<br>25 C<br>Se 2S SSS SSS 0.1 el<br>|, Fy7.2 | 2SSA | SSSft tt eeeSS SS SS SS SS SS<br>0.1 YY i7| | | | [ | | [ | tT ft 0.01 aeeee<br>0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 100 200 300 400 500 600<br>vF, INSTANTANEOUS VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS)<br>A)<br>, REVERSE CURRENT (<br>IR<br>, INSTANTANEOUS FORWARD CURRENT (AMPS)<br>iF<br>**----- End of picture text -----**<br> **Figure 11. Typical Forward Voltage** **Figure 12. Typical Reverse Current*** * The curves shown are typical for the highest voltage device in the grouping. Typical reverse current for lower voltage selections can be estimated from these same curves if VR is sufficiently below rated VR. **==> picture [490 x 174] intentionally omitted <==** **----- Start of picture text -----**<br> 10 10<br>9.0 RATED VR APPLIED 9.0 dc RR JA JA = 60= 16 C/WC/W<br>8.0 dc 8.0 (NO HEAT SINK)<br>7.0 ———— | 7.0 PIN | | Ha<br>NN ee eee pt IN<br>6.0 Pot | KN | 6.0 | |ONIN<br>SQUARE WAVE SQUARE WAVE<br>5.0 i NN e e 5.0 Pe ee<br>4.0 pot N A 4.0 ee NNe ee<br>dc<br>3.0 Pt tT TT NA 3.0 NN<br>2.0 2.0 SQUARE WAVE<br>1.0 potNee| | | rT UR 1.0 iaii Neeeae<br>0 a ee 0 Ft | | | TT SA<br>140 150 160 170 0 20 40 60 80 100 120 140 160 180 200<br>180<br>TC, CASE TEMPERATURE ( C) TA, AMBIENT TEMPERATURE ( C)<br>, AVERAGE FORWARD CURRENT (AMPS) , AVERAGE FORWARD CURRENT (AMPS)<br>IF(AV) IF(AV)<br>**----- End of picture text -----**<br> **Figure 13. Current Derating, Case** **Figure 14. Current Derating, Ambient** **==> picture [490 x 200] intentionally omitted <==** **----- Start of picture text -----**<br> 14 10,000<br>13<br>1211 ee SQUARE as ee sl<br>WAVE<br>10<br>errr | ie a<br>9.0 dc<br>a A<br>8.0<br>7.0 1,000<br>esso<br>6.0<br>ee aeee |ee<br>5.0 ee St<br>4.03.0 ee ee ee a<br>2.0 TJ = 175 C<br>pa Za Sl<br>1.00 cs 100<br>0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10 10 100 1,000 10,000<br>IF(AV), AVERAGE FORWARD CURRENT (AMPS) tp, SQUARE WAVE PULSE DURATION ( u s)<br>Figure 15. Power Dissipation Figure 16. Typical Non−Repetitive Surge<br>Current<br>, AVERAGE POWER DISSIPATION (WATTS) , NON-REPETITIVE SURGE CURRENT (A)<br>F(AV) IFSM<br>P<br>**----- End of picture text -----**<br> * Typical performance based on a limited sample size. ON Semiconductor does not guarantee ratings not listed in the Maximum Ratings table. **www.onsemi.com** **Share Feedback** Your Opinion Matters **5** **MUR810G, MUR815G, MUR820G, MUR840G, MUR860G, MURF860G,** **==> picture [489 x 611] intentionally omitted <==** **----- Start of picture text -----**<br> 1.0<br>————<br>ee D = 0.5 a<br>ee ee ee er<br>0.5 accEE a cr<br>Pott PT Tf eee | eer tt<br>0.2 0.1<br>eae ee aa<br>aa 0 ee<br>0.1 pe—— 0.05 eTCa et er Z 0 JC(t) = r(t ) R 0 JC llCH<br>0.05 |ioreof=eee|Tht| here 0.01 aaa Ps Ss a OO|| P(pk) r | t1 | | | RD CURVES APPLY FOR POWER PULSE TRAIN SHOWN Q JC = 1.5 C/W MAX TIianIT]I<br>SINGLE PULSE t 2 READ TIME AT T 1<br>0.020.01 ae—TCEE TTI PtFEaTTI tT DUTY CYCLE, D = t ° a 1 /t 2 T J(pk) - T C = P (pk) Z ; JC(t) HT | il<br>0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1000<br>t, TIME (ms)<br>Figure 17. Thermal Response<br>10<br>FE D = 0.5 eo<br>0.2 ss gil” _ 1__ § § ||<br>1.0 ne 0.1 te<br>EE 0.05 ee AIH<br>0.02<br>0.1 |eea| eeerce a Tf| P(pk) Z 9 JC(t) = r(t) R 0 JC |Hlat<br>0.01 | Tam a eee ne R JC = 1.6 C/W MAX ty<br>=eeTPeet ttmr et et tt et D CURVES APPLY FOR POWER 0 HHHH]<br>PULSE TRAIN SHOWN<br>0.01 eerrmin SINGLE PULSE E t1 S t2 READ TIME AT t1 l<br>0.001 PrpTPCTPy CoCa Coea he DUTY CYCLE, D = t — 1 /t 2 TJ(pk) - TC = P(pk) Z 0 JC(t) HHHMy Hl<br>0.000001 0.00001 0.0001 0.001 0.01 0.1 1.0 10 100 1000<br>t, TIME (s)<br>Figure 18. Thermal Response, (MURF860G) Junction−to−Case (R 0 JC)<br>100<br>D = 0.5<br>Smet 0.2<br>10 Ee 0.1 a a a —_e|<br>0.05<br>ee, 0.02<br>1.0 SES rr ee<br>0.01<br>Aee P (pk) Z JC(t) = r(t) R JC<br>0.1 = e 8<br>SSS SSS SSS _ ss ===. ==-- = R 8 JC = 1.6 C/W MAX<br>D CURVES APPLY FOR POWER<br>aPta eeett | | | |<br>PULSE TRAIN SHOWN<br>0.01 ee SINGLE PULSE allele,eee = t1 t2 READ TIME AT t1<br>0.001 pTanee DUTY CYCLE, D = t1/t2 T J(pk) - T C = P (pk) Z 6 JC (t)<br>0.000001 0.00001 0.0001 0.001 0.01 0.1 1.0 10 100 1000<br>t, TIME (s)<br>r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)<br>C/W)<br><br>(NORMALIZED) (<br>r(t), TRANSIENT THERMAL RESPONSE<br>C/W)<br><br>(NORMALIZED) (<br>r(t), TRANSIENT THERMAL RESPONSE<br>**----- End of picture text -----**<br> **Figure 19. Thermal Response, (MURF860G) Junction−to−Ambient (R** 0 **JA)** **www.onsemi.com** **Share Feedback** Your Opinion Matters **6** **MUR810G, MUR815G, MUR820G, MUR840G, MUR860G, MURF860G,** **==> picture [241 x 171] intentionally omitted <==** **----- Start of picture text -----**<br> 1000<br>500 TJ = 25 C<br>200<br>Pe et<br>100<br>50<br>20 PEE Ee<br>10<br>1.0 2.0 5.0 10 20 50 100<br>VR, REVERSE VOLTAGE (V)<br>C, CAPACITANCE (pF)<br>**----- End of picture text -----**<br> **Figure 20. Typical Capacitance** ## **ORDERING INFORMATION** |**ORDERING INFORMATION**||| |---|---|---| |**Device**|**Package**|**Shipping**| |MUR810G|TO−220AC<br>(Pb−Free)|50 Units / Rail| |MUR815G|TO−220AC<br>(Pb−Free)|50 Units / Rail| |MUR820G|TO−220AC<br>(Pb−Free)|50 Units / Rail| |MUR840G|TO−220AC<br>(Pb−Free)|50 Units / Rail| |MUR860G|TO−220AC<br>(Pb−Free)|50 Units / Rail| |MURF860G|TO−220FP<br>(Pb−Free)|50 Units / Rail| ## **DISCONTINUED** (Note 2) |**DISCONTINUED**(Note 2)||| |---|---|---| |**Device**|**Package**|**Shipping**†| |MUR805G|TO−220AC<br>(Pb−Free)|50 Units / Rail| |SUR8820G|TO−220AC<br>(Pb−Free)|50 Units / Rail| |SUR8840G|TO−220AC<br>(Pb−Free)|50 Units / Rail| †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 2. **DISCONTINUED:** This device is not recommended for new design. Please contact your **onsemi** representative for information. The most current information on this device may be available on www.onsemi.com. **www.onsemi.com** **Share Feedback** Your Opinion Matters **7** MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** **==> picture [416 x 282] intentionally omitted <==** **----- Start of picture text -----**<br> TO−220, 2−LEAD<br>CASE 221B−04<br>ISSUE F<br>NOTES:<br>C 1. DIMENSIONING AND TOLERANCING PER ANSI<br>Y14.5M, 1982.<br>Q B F T S 2. CONTROLLING DIMENSION: INCH.<br>INCHES MILLIMETERS<br>DIM MIN MAX MIN MAX<br>SCALE 1:1 4 A 0.595 0.620 15.11 15.75<br>B 0.380 0.405 9.65 10.29<br>A C 0.160 0.190 4.06 4.82<br>U D 0.025 0.039 0.64 1.00<br>1 3 F 0.142 0.161 3.61 4.09<br>H G 0.190 0.210 4.83 5.33<br>H 0.110 0.130 2.79 3.30<br>K J 0.014 0.025 0.36 0.64<br>K 0.500 0.562 12.70 14.27<br>L 0.045 0.060 1.14 1.52<br>Q 0.100 0.120 2.54 3.04<br>L R 0.080 0.110 2.04 2.79<br>D R S 0.045 0.055 1.14 1.39<br>T 0.235 0.255 5.97 6.48<br>G J U 0.000 0.050 0.000 1.27<br>STYLE 1: STYLE 2:<br>PIN 1. CATHODE PIN 1. ANODE<br> 2. N/A 2. N/A<br> 3. ANODE 3. CATHODE<br> 4. CATHODE 4. ANODE<br>**----- End of picture text -----**<br> **==> picture [80 x 7] intentionally omitted <==** **----- Start of picture text -----**<br> DATE 12 APR 2013<br>**----- End of picture text -----**<br> **==> picture [492 x 37] intentionally omitted <==** **----- Start of picture text -----**<br> Electronic versions are uncontrolled except when accessed directly from the Document Repository.<br>DOCUMENT NUMBER: 98ASB42149B Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.<br>DESCRIPTION: TO−220, 2−LEAD PAGE 1 OF 1<br>**----- End of picture text -----**<br> **onsemi** and are trademarks of Semiconductor Components Industries, LLC dba **onsemi** or its subsidiaries in the United States and/or other countries. **onsemi** reserves the right to make changes without further notice to any products herein. **onsemi** makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. **onsemi** does not convey any license under its patent rights nor the rights of others. www.onsemi.com © Semiconductor Components Industries, LLC, 2019 MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** **==> picture [116 x 29] intentionally omitted <==** **----- Start of picture text -----**<br> TO−220 FULLPAK, 2−LEAD<br>CASE 221E−01<br>ISSUE A<br>**----- End of picture text -----**<br> DATE 21 JAN 2008 **==> picture [454 x 195] intentionally omitted <==** **----- Start of picture text -----**<br> NOTES:<br>1. DIMENSIONING AND TOLERANCING PER ANSI<br>−T− SEATINGPLANE 2. Y14.5M, 1982.CONTROLLING DIMENSION: INCH.<br>F −B− C INCHES MILLIMETERS<br>DIM MIN MAX MIN MAX<br>SCALE 1:1 S A 0.617 0.633 15.67 16.07<br>Q B 0.392 0.408 9.96 10.36<br>U C 0.177 0.193 4.50 4.90<br>D 0.024 0.039 0.60 1.00<br>A F 0.121 0.129 3.08 3.28<br>G 0.100 BSC 2.54 BSC<br>1 2 3 H 0.117 0.133 2.98 3.38<br>H J 0.018 0.025 0.45 0.64<br>K 0.499 0.562 12.68 14.27<br>K −Y− L 0.045 0.060 1.14 1.52<br>N 0.200 BSC 5.08 BSC<br>Q 0.122 0.138 3.10 3.50<br>R 0.101 0.117 2.56 2.96<br>G J S 0.092 0.108 2.34 2.74<br>N R U 0.255 0.271 6.48 6.88<br>STYLE 1:<br>L PIN 1. CATHODE<br>D 2 PL 2. N/A<br> 3. ANODE<br>0.25 (0.010) M B M Y<br>**----- End of picture text -----**<br> **==> picture [93 x 19] intentionally omitted <==** **----- Start of picture text -----**<br> GENERIC<br>MARKING DIAGRAM*<br>**----- End of picture text -----**<br> **==> picture [111 x 187] intentionally omitted <==** **----- Start of picture text -----**<br> AYWWG<br>xxxxxxxxxx<br>KA<br>Rectifier<br>A = Assembly Location<br>Y = Year<br>WW = Work Week<br>G = Pb−Free Package<br>xxxxxx = Device Code<br>KA = Polarity Designator<br>**----- End of picture text -----**<br> - *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ � ”, may or may not be present. **==> picture [493 x 37] intentionally omitted <==** **----- Start of picture text -----**<br> Electronic versions are uncontrolled except when accessed directly from the Document Repository.<br>DOCUMENT NUMBER: 98ASB42851B Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.<br>DESCRIPTION: TO−220 FULLPAK, 2−LEAD PAGE 1 OF 1<br>**----- End of picture text -----**<br> **onsemi** and are trademarks of Semiconductor Components Industries, LLC dba **onsemi** or its subsidiaries in the United States and/or other countries. **onsemi** reserves the right to make changes without further notice to any products herein. **onsemi** makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. **onsemi** does not convey any license under its patent rights nor the rights of others. www.onsemi.com © Semiconductor Components Industries, LLC, 2008 **onsemi** , , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “ **onsemi** ” or its affiliates and/or subsidiaries in the United States and/or other countries. **onsemi** owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of **onsemi** ’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. **onsemi** reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as−is” and **onsemi** makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using **onsemi** products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by **onsemi** . “Typical” parameters which may be provided in **onsemi** data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. **onsemi** does not convey any license under any of its intellectual property rights nor the rights of others. **onsemi** products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use **onsemi** products for any such unintended or unauthorized application, Buyer shall indemnify and hold **onsemi** and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that **onsemi** was negligent regarding the design or manufacture of the part. **onsemi** is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. ## **ADDITIONAL INFORMATION** **TECHNICAL PUBLICATIONS** : **ONLINE SUPPORT** : www.onsemi.com/support **Technical Library:** www.onsemi.com/design/resources/technical−documentation **For additional information, please contact your local Sales Representative at onsemi Website:** www.onsemi.com www.onsemi.com/support/sales **==> picture [232 x 43] intentionally omitted <==**
Updated at June 8, 2026
onsemi is a premier global supplier of intelligent power and sensing technologies, driving disruptive innovations across the automotive, industrial, and cloud infrastructure markets. Recognized for their commitment to sustainability and reliable supply chains, the company accelerates advancements in vehicle electrification, industrial automation, and 5G networks by solving the industry's most complex design challenges. At the core of their portfolio is an industry-leading selection of discrete semiconductors. This extensive range features thousands of high-performance bipolar transistors, single and dual MOSFETs, and a comprehensive array of diodes, including Zener, Schottky, and fast-recovery rectifiers. Engineered for superior thermal performance and energy efficiency, these foundational components are critical for demanding power conversion, switching, and signal conditioning applications. Beyond essential discretes, onsemi provides a robust suite of advanced power management and circuit protection solutions. Their lineup includes intelligent power modules, single IGBTs, and transient voltage suppression (TVS) diodes designed to safeguard sensitive circuitry. Complimented by integrated passive filters, AC/DC LED driver ICs, and specialized sub-2.4GHz RF transceivers, onsemi equips engineers with the scalable, high-quality technologies needed to build a cleaner, smarter, and more connected world.
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