MUR620CTG
Fast / Ultrafast Diode, 200 V, 6 A, Dual Common Cathode, 975 mV, 35 ns, 75 A
- Manufacturer: ONSEMI
- Product type: Fast & Ultrafast Recovery Rectifier Diodes
- Repetitive Reverse Voltage Vrrm Max:200V; Forward Current If(AV):6A; Diode Configuration:Dual Common Cathode; Forward Voltage VF Max:975mV; Reverse Recovery Time trr Max:35ns; Forward Surge
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 3 Pin
- Product Range: MUR62
- Qualification: -
- Diode Case Style: TO-220AB
- Diode Configuration: Dual Common Cathode
- Forward Voltage Max: 975mV
- Forward Surge Current: 75A
- Reverse Recovery Time: 35ns
- Average Forward Current: 6A
- Operating Temperature Max: 175°C
- Repetitive Peak Reverse Voltage: 200V
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 0.313 € |
| Current stock | 10+ |
| Lead time | 30 days |
## MUR620CTG ## Switch Mode Power Rectifier These state−of−the−art Switch Mode power rectifiers are designed for use in switching power supplies, inverters and as free wheeling diodes. **www.onsemi.com** ## **Features** - Ultrafast 35 Nanosecond Recovery Time - 175°C Operating Junction Temperature **ULTRAFAST RECTIFIER 6.0 AMPERES, 200 VOLTS** - Popular TO−220 Package - These are Pb−Free Devices* **==> picture [447 x 355] intentionally omitted <==** **----- Start of picture text -----**<br> 1<br>Mechanical Characteristics: 2, 4<br>• Case: Epoxy, Molded 3 oe<br>• Weight: 1.9 Grams (Approximately)<br>• Finish: All External Surfaces Corrosion Resistant and Terminal 4<br>Leads are Readily Solderable<br>• Lead Temperature for Soldering Purposes:<br>260°C Max. for 10 Seconds<br>TO−220AB<br>MAXIMUM RATINGS<br>CASE 221A<br>Rating Symbol Value Unit<br>1<br>2<br>Peak Repetitive Reverse Voltage VRRM 200 V 3<br>Working Peak Reverse Voltage VRWM<br>DC Blocking Voltage VR<br>MARKING DIAGRAM<br>Average Rectified Forward Voltage(Rated VR, TC = 130 ° C) Per Diode IF(AV) 3.0 A<br>Total Device 6.0<br>Peak Repetitive Forward Current IFRM 6.0 A<br>per Diode Leg (Rated VR, Square Wave, AY WW<br>20 kHz, TC = 130 ° C) U620G<br>AKA<br>Non−Repetitive Peak Surge Current IFSM 75 A<br>(Surge Applied at Rated Load Conditions<br>Halfwave, Single Phase, 60 Hz)<br>4<br>Operating Junction and Storage TJ, Tstg −65 to +175 ° C<br>Temperature Range A = Assembly Location<br>Stresses exceeding those listed in the Maximum Ratings table may damage the tH i Y = Year 7<br>device. If any of these limits are exceeded, device functionality should not be WW = Work Week<br>assumed, damage may occur and reliability may be affected. U620 = Device Code<br>G = Pb−Free Package<br>AKA = Diode Polarity<br>**----- End of picture text -----**<br> - *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. **ORDERING INFORMATION Device Package Shipping** MUR620CTG TO−220 50 Units/Rail (Pb−Free) ~~Et~~ Publication Order Number: **MUR620CT/D** **1** © Semiconductor Components Industries, LLC, 2015 **January, 2015 − Rev. 5** **MUR620CTG** ## **THERMAL CHARACTERISTICS** (Per Diode Leg) |**Rating**|**Symbol**|**Typical**|**Maximum**|**Unit**| |---|---|---|---|---| |Thermal Resistance, Junction−to−Case|R�JC|5.0−6.0|7.0|°C/W| |**ELECTRICAL CHARACTERISTICS**(Per Diode Leg)||||| |**Rating**|**Symbol**|**Typical**|**Maximum**|**Unit**| |Instantaneous Forward Voltage (Note 1)<br>(iF= 3.0 A, TC= 150°C)<br>(iF= 3.0 A, TC= 25°C)|vF|0.80<br>0.94|0.895<br>0.975|V| |Instantaneous Reverse Current (Note 1)<br>(Rated DC Voltage, TC= 150°C)<br>(Rated DC Voltage, TC= 25°C)|iR|2.0−10<br>0.01−3.0|250<br>5.0|�A| |Reverse Recovery Time<br>(IF= 1.0 A, di/dt = 50 A/�s)|trr|20−30|35|ns| Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulse Width = 300 � s, Duty Cycle ≤ 2.0%. **==> picture [236 x 170] intentionally omitted <==** **----- Start of picture text -----**<br> 10<br>7.0<br>5.0<br>3.0<br>2.0<br>1.0<br>0.7<br>0.5<br>0.3 TJ = 175°C 25°C<br>0.2<br>150°C 100°C<br>0.1<br>0.2 0.4 0.6 0.8 1.0 1.2<br>vF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)<br>, INSTANTANEOUS FORWARD CURRENT (AMPS)<br>iF<br>**----- End of picture text -----**<br> **Figure 1. Typical Forward Voltage** **==> picture [241 x 172] intentionally omitted <==** **----- Start of picture text -----**<br> 100<br>40<br>20 TJ = 175°C<br>10<br>4.0 150°C<br>2.0<br>1.0<br>0.4 100°C<br>0.2<br>0.1<br>0.04<br>0.02 25°C<br>0.01<br>0.004<br>0.002<br>0.001<br>0 20 40 60 80 100 120 140 160 180 200<br>VR, REVERSE VOLTAGE (VOLTS)<br>μ<br>IR, REVERSE CURRENT (��A)<br>**----- End of picture text -----**<br> **Figure 2. Typical Reverse Current** **www.onsemi.com** **2** **MUR620CTG** **==> picture [241 x 408] intentionally omitted <==** **----- Start of picture text -----**<br> 8.0<br>Rated VR Applied<br>7.0<br>6.0<br>DC<br>5.0<br>4.0<br>SQUARE WAVE<br>3.0<br>2.0<br>1.0<br>0<br>100 120 140 160 180<br>TC, CASE TEMPERATURE (°C)<br>Figure 3. Total Device Current Derating, Case<br>7.0<br>R�JA = 16 ° C/W with<br>6.0 a typical TO-220 heat sink<br>dc<br>5.0 SQUARE WAVE<br>4.0<br>dc<br>3.0<br>2.0 SQUARE WAVE<br>1.0 R�JA = 60 ° C/W<br>(free air, no heat sink)<br>0<br>0 20 40 60 80 100 120 140 160 180 200<br>TA, AMBIENT TEMPERATURE (°C)<br>IF(AV), AVERAGE FORWARD CURRENT (AMPS)<br>, AVERAGE FORWARD CURRENT (AMPS)<br>IF(AV)<br>**----- End of picture text -----**<br> **Figure 4. Total Device Current Derating, Ambient** **==> picture [236 x 175] intentionally omitted <==** **----- Start of picture text -----**<br> 8.0<br>7.0<br>SQUARE WAVE<br>DC<br>6.0<br>5.0<br>4.0<br>3.0<br>2.0<br>1.0<br>0<br>0 1 2 3 4 5 6 7 8<br>IF(AV), AVERAGE FORWARD CURRENT (AMPS)<br>PF(AV), AVERAGE POWER DISSIPATION (WATTS)<br>**----- End of picture text -----**<br> **Figure 5. Power Dissipation** **www.onsemi.com** **3** MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** **TO−220** CASE 221A ISSUE AK DATE 13 JAN 2022 **==> picture [34 x 7] intentionally omitted <==** **----- Start of picture text -----**<br> SCALE 1:1<br>**----- End of picture text -----**<br> **==> picture [338 x 122] intentionally omitted <==** **----- Start of picture text -----**<br> STYLE 1: STYLE 2: STYLE 3: STYLE 4:<br>PIN 1. BASE PIN 1. BASE PIN 1. CATHODE PIN 1. MAIN TERMINAL 1<br>2. COLLECTOR 2. EMITTER 2. ANODE 2. MAIN TERMINAL 2<br>3. EMITTER 3. COLLECTOR 3. GATE 3. GATE<br>4. COLLECTOR 4. EMITTER 4. ANODE 4. MAIN TERMINAL 2<br>STYLE 5: STYLE 6: STYLE 7: STYLE 8:<br>PIN 1. GATE PIN 1. ANODE PIN 1. CATHODE PIN 1. CATHODE<br>2. DRAIN 2. CATHODE 2. ANODE 2. ANODE<br>3. SOURCE 3. ANODE 3. CATHODE 3. EXTERNAL TRIP/DELAY<br>4. DRAIN 4. CATHODE 4. ANODE 4. ANODE<br>STYLE 9: STYLE 10: STYLE 11: STYLE 12:<br>PIN 1. GATE PIN 1. GATE PIN 1. DRAIN PIN 1. MAIN TERMINAL 1<br>2. COLLECTOR 2. SOURCE 2. SOURCE 2. MAIN TERMINAL 2<br>3. EMITTER 3. DRAIN 3. GATE 3. GATE<br>4. COLLECTOR 4. SOURCE 4. SOURCE 4. NOT CONNECTED<br>**----- End of picture text -----**<br> **==> picture [492 x 37] intentionally omitted <==** **----- Start of picture text -----**<br> Electronic versions are uncontrolled except when accessed directly from the Document Repository.<br>DOCUMENT NUMBER: 98ASB42148B Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.<br>DESCRIPTION: TO−220 PAGE 1 OF 1<br>**----- End of picture text -----**<br> **onsemi** and are trademarks of Semiconductor Components Industries, LLC dba **onsemi** or its subsidiaries in the United States and/or other countries. **onsemi** reserves the right to make changes without further notice to any products herein. **onsemi** makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. **onsemi** does not convey any license under its patent rights nor the rights of others. www.onsemi.com © Semiconductor Components Industries, LLC, 2019 **onsemi** , , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “ **onsemi** ” or its affiliates and/or subsidiaries in the United States and/or other countries. **onsemi** owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of **onsemi** ’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. **onsemi** reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as−is” and **onsemi** makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using **onsemi** products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by **onsemi** . “Typical” parameters which may be provided in **onsemi** data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. **onsemi** does not convey any license under any of its intellectual property rights nor the rights of others. **onsemi** products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use **onsemi** products for any such unintended or unauthorized application, Buyer shall indemnify and hold **onsemi** and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that **onsemi** was negligent regarding the design or manufacture of the part. **onsemi** is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. ## **PUBLICATION ORDERING INFORMATION** **LITERATURE FULFILLMENT** : **TECHNICAL SUPPORT Email Requests to:** orderlit@onsemi.com **North American Technical Support: Europe, Middle East and Africa Technical Support:** Voice Mail: 1 800−282−9855 Toll Free USA/Canada Phone: 00421 33 790 2910 **onsemi Website:** www.onsemi.com Phone: 011 421 33 790 2910 For additional information, please contact your local Sales Representative ◊ **==> picture [232 x 43] intentionally omitted <==**
Updated at June 8, 2026
onsemi is a premier global supplier of intelligent power and sensing technologies, driving disruptive innovations across the automotive, industrial, and cloud infrastructure markets. Recognized for their commitment to sustainability and reliable supply chains, the company accelerates advancements in vehicle electrification, industrial automation, and 5G networks by solving the industry's most complex design challenges. At the core of their portfolio is an industry-leading selection of discrete semiconductors. This extensive range features thousands of high-performance bipolar transistors, single and dual MOSFETs, and a comprehensive array of diodes, including Zener, Schottky, and fast-recovery rectifiers. Engineered for superior thermal performance and energy efficiency, these foundational components are critical for demanding power conversion, switching, and signal conditioning applications. Beyond essential discretes, onsemi provides a robust suite of advanced power management and circuit protection solutions. Their lineup includes intelligent power modules, single IGBTs, and transient voltage suppression (TVS) diodes designed to safeguard sensitive circuitry. Complimented by integrated passive filters, AC/DC LED driver ICs, and specialized sub-2.4GHz RF transceivers, onsemi equips engineers with the scalable, high-quality technologies needed to build a cleaner, smarter, and more connected world.
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