MUR4100ERLG

## **ON Semiconductor** 

## **Is Now** 

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**onsemi** and       and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “ **onsemi** ” or its affiliates and/or subsidiaries in the United States and/or other countries. **onsemi** owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of **onsemi** product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. **onsemi** reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as-is” and **onsemi** makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using **onsemi** products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by **onsemi** . “Typical” parameters which may be provided in **onsemi** data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. **onsemi** does not convey any license under any of its intellectual property rights nor the rights of others. **onsemi** products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use **onsemi** products for any such unintended or unauthorized application, Buyer shall indemnify and hold **onsemi** and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that **onsemi** was negligent regarding the design or manufacture of the part. **onsemi** is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. 

## MUR490E, MUR4100E 

- ~~a~~ ) 

## **MUR4100E is a Preferred Device** 

## SWITCHMODE Power Rectifiers **Ultrafast “E’’ Series with High Reverse Energy Capability** 

These state−of−the−art devices are designed for use in switching power supplies, inverters and as free wheeling diodes. 

## **Features** 

- 20 mJ Avalanche Energy Guaranteed 

## **http://onsemi.com** 

**ULTRAFAST RECTIFIERS 4.0 AMPS, 900 − 1000 VOLTS** 

- Excellent Protection Against Voltage Transients in Switching Inductive Load Circuits 

- Ultrafast 75 Nanosecond Recovery Time 

- 175°C Operating Junction Temperature 

• Low Forward Voltage • Low Leakage Current • High Temperature Glass Passivated Junction **AXIAL LEAD** • Reverse Voltage to 1000 V **CASE 267−05** • These are Pb−Free Devices **STYLE 1 Mechanical Characteristics:** • Case: Epoxy, Molded **MARKING DIAGRAM** • Weight: 1.1 Gram (Approximately) • Finish: All External Surfaces Corrosion Resistant and Terminal A MUR Leads are Readily Solderable 4xxxE • Lead and Mounting Surface Temperature for Soldering Purposes: YYWW 220°C Max for 10 Seconds, 1/16″ from Case • Polarity: Cathode Indicated by Polarity Band hon A = Assembly Location **MAXIMUM RATINGS** MUR4xxxE = Device Code xxx = 90 or 100 **Rating Symbol Value Unit** YY = Year Peak Repetitive Reverse Voltage VRRM V WW = Work Week Working Peak Reverse Voltage VRWM = Pb−Free Package DC Blocking Voltage MUR490E VR 900 (Note: Microdot may be in either location) 

|**MAXIMUM RATINGS**|||||MUR4xxxE = Device Code<br>xxx = 90 or 100|
|---|---|---|---|---|---|
|**Rating**|**Symbol**|**Value**|**Unit**||YY<br>= Year|
|Peak Repetitive Reverse Voltage|VRRMRRM||V||WW<br>= Work Week|
|Working Peak Reverse Voltage<br>DC Blocking Voltage<br>MUR490E<br>MUR4100E<br>Average Rectified Forward Current (Sq. Wave)<br>(Mounting Method #3 Per Note 1)<br>Nonrepetitive Peak Surge Current<br>(Surge Applied at Rated Load Conditions,<br>Halfwave, Single Phase, 60 Hz)<br>Operating Junction Storage Temperature<br>**THERMAL CHARACTERISTICS**<br>**Characteristic**<br>Thermal Resistance, Junction−to−Case|VRWMRWM<br>VRR<br>IF(AV)<br>IFSM<br>TJ, Tstg<br>**Symbol**<br>R JC|900<br>1000<br>4.0 @<br>TA= 35°C<br>70<br>−65 to +175<br>**Max**<br>See Note 1|A<br>A<br>°C<br>**Unit**<br>°C/W||= Pb−Free Package<br>(Note: Microdot may be in either location)<br>MUR4100EG<br>Axial Lead*<br>500 Units / Bulk<br>MUR4100ERL<br>Axial Lead*<br>1,500/Tape & Reel<br>**Device**<br>**Package**<br>**Shipping**†<br>MUR490E<br>Axial Lead*<br>500 Units / Bulk<br>MUR4100E<br>Axial Lead*<br>500 Units / Bulk<br>**ORDERING INFORMATION**<br>MUR4100ERLG<br>Axial Lead*<br>1,500/Tape & Reel<br>~~7~~|



= (Note: Microdot may be in either location) **ORDERING INFORMATION Device Package Shipping**[†] MUR490E Axial Lead* 500 Units / Bulk MUR4100E Axial Lead* 500 Units / Bulk MUR4100EG Axial Lead* 500 Units / Bulk MUR4100ERL Axial Lead* 1,500/Tape & Reel MUR4100ERLG Axial Lead* 1,500/Tape & Reel ~~7~~ †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 

## **THERMAL CHARACTERISTICS** 

Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 

*This package is inherently Pb−Free. 

*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 

**Preferred** devices are recommended choices for future use and best overall value. 

Publication Order Number: **MUR490E/D** 

**1** 

© Semiconductor Components Industries, LLC, 2006 **February, 2006 − Rev. 3** 

**MUR490E, MUR4100E** 

## **ELECTRICAL CHARACTERISTICS** 

|**ELECTRICAL CHARACTERISTICS**||||
|---|---|---|---|
|**Characteristics**|**Symbol**|**Value**|**Unit**|
|Maximum Instantaneous Forward Voltage (Note 1)<br>(iF= 3.0 Amps, TJ= 150°C)<br>(iF= 3.0 Amps, TJ= 25°C)<br>(iF= 4.0 Amps, TJ= 25°C)|vF|1.53<br>1.75<br>1.85|V|
|Maximum Instantaneous Reverse Current (1)<br>(Rated dc Voltage, TJ= 100°C)<br>(Rated dc Voltage, TJ= 25°C)|iR|900<br>25|�A|
|Maximum Reverse Recovery Time<br>(IF= 1.0 Amp, di/dt = 50 Amp/�s)<br>(IF= 0.5 Amp, iR= 1.0 Amp, IREC= 0.25 Amp)|trr|100<br>75|ns|
|Maximum Forward Recovery Time<br>(IF= 1.0 Amp, di/dt = 100 Amp/�s, Recovery to 1.0 V)|tfr|75|ns|
|Controlled Avalanche Energy<br>(See Test Circuit in Figure 6)|WAVAL|20|mJ|



1. Pulse Test: Pulse Width = 300 � s, Duty Cycle � 2.0%. 

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20 1000<br>400200 TJ = 175°C<br>TJ = 175°C 25°C 100<br>10 100°C 402010 100°C<br>7.0 4.0<br>2.0<br>5.0 1.0 25°C<br>0.4<br>0.2<br>0.1<br>3.0<br>0.04<br>*The curves shown are typical for the highest voltage<br>0.02<br>2.0 0.01 device in the voltage grouping. Typical reverse current<br>for lower voltage selections can be estimated from these<br>0.004<br>0.002 same curves if VR is sufficiently below rated VR.<br>0.001<br>0 100 200 300 400 500 600 700 800 900 1000<br>1.0<br>VR, REVERSE VOLTAGE (VOLTS)<br>0.7 Figure 2. Typical Reverse Current*<br>0.5<br>10<br>0.3 Rated VRR<br>8.0 R�JA = 28°C/W�JA = 28°C/WJA = 28°C/W = 28°C/W°C/WC/W<br>0.2<br>6.0<br>0.1<br>4.0 dc<br>0.07<br>SQUARE WAVE<br>0.05 2.0<br>0.03 0<br>0 50 100 150 200<br>0.02 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2 TA, AMBIENT TEMPERATURE (°C)A, AMBIENT TEMPERATURE (°C), AMBIENT TEMPERATURE (°C)°C)C)<br>vF, INSTANTANEOUS VOLTAGE (VOLTS) Figure 3. Current Derating<br>Figure 1. Typical Forward Voltage (Mounting Method #3 Per Note 1)<br>�<br>, REVERSE CURRENT (   A)<br>IR<br>, INSTANTANEOUS FORWARD CURRENT (AMPS)<br>iF<br>, AVERAGE FORWARD CURRENT (AMPS)<br>IF(AV)F(AV)<br>**----- End of picture text -----**<br>


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10<br>Rated VRR<br>R�JA = 28°C/W�JA = 28°C/WJA = 28°C/W = 28°C/W°C/WC/W<br>8.0<br>6.0<br>4.0 dc<br>SQUARE WAVE<br>2.0<br>0<br>0 50 100 150 200<br>TA, AMBIENT TEMPERATURE (°C)A, AMBIENT TEMPERATURE (°C), AMBIENT TEMPERATURE (°C)°C)C) 2<br>Figure 3. Current Derating<br>(Mounting Method #3 Per Note 1)<br>, AVERAGE FORWARD CURRENT (AMPS)<br>IF(AV)F(AV)<br>**----- End of picture text -----**<br>


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**MUR490E, MUR4100E** 

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10<br>9.0 TJ = 175°C<br>8.0<br>5.0<br>7.0<br>6.0<br>10<br>5.0 (Capacitive IPK =20<br>4.0 Load) IAV dc<br>3.0<br>SQUAREWAVE<br>2.0<br>1.0<br>0<br>0 1.0 2.0 3.0 4.0 5.0<br>IF(AV), AVERAGE FORWARD CURRENT (AMPS)<br>, AVERAGE POWER DISSIPATION (WATTS)<br>PF(AV)<br>**----- End of picture text -----**<br>


**Figure 4. Power Dissipation** 

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+VDD<br>IL 40 �H COIL<br>VD<br>ID<br>MERCURY<br>SWITCH<br>DUT<br>S1<br>**----- End of picture text -----**<br>


**Figure 6. Test Circuit** 

The unclamped inductive switching circuit shown in Figure 6 was used to demonstrate the controlled avalanche capability of the new “E’’ series Ultrafast rectifiers. A mercury switch was used instead of an electronic switch to simulate a noisy environment when the switch was being opened. 

When S1 is closed at t0 the current in the inductor IL ramps up linearly; and energy is stored in the coil. At t1 the switch is opened and the voltage across the diode under test begins to rise rapidly, due to di/dt effects, when this induced voltage reaches the breakdown voltage of the diode, it is clamped at BVDUT and the diode begins to conduct the full load current which now starts to decay linearly through the diode, and goes to zero at t2. 

By solving the loop equation at the point in time when S1 is opened; and calculating the energy that is transferred to the diode it can be shown that the total energy transferred is equal to the energy stored in the inductor plus a finite amount of energy from the VDD power supply while the diode is in breakdown (from t1 to t2) minus any losses due to finite 

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70<br>60<br>50<br>40<br>TJ = 25°C<br>30<br>20<br>10<br>9.0<br>8.0<br>7.0<br>0 10 20 30 40 50<br>VR, REVERSE VOLTAGE (VOLTS)<br>C, CAPACITANCE (pF)<br>**----- End of picture text -----**<br>


**Figure 5. Typical Capacitance** 

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BVDUT<br>ID<br>IL<br>VDD<br>t0 t1 t2 t<br>**----- End of picture text -----**<br>


**Figure 7. Current−Voltage Waveforms** 

component resistances. Assuming the component resistive elements are small Equation (1) approximates the total energy transferred to the diode. It can be seen from this equation that if the VDD voltage is low compared to the breakdown voltage of the device, the amount of energy contributed by the supply during breakdown is small and the total energy can be assumed to be nearly equal to the energy stored in the coil during the time when S1 was closed, Equation (2). 

The oscilloscope picture in Figure 8, shows the information obtained for the MUR8100E (similar die construction as the MUR4100E Series) in this test circuit conducting a peak current of one ampere at a breakdown voltage of 1300 V, and using Equation (2) the energy absorbed by the MUR8100E is approximately 20 mjoules. 

Although it is not recommended to design for this condition, the new “E’’ series provides added protection against those unforeseen transient viruses that can produce unexplained random failures in unfriendly environments. 

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**MUR490E, MUR4100E** 

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EQUATION (1): CH1 500V A 20 � s 953 V VERT CHANNEL 2:<br>CH2 50mV IL<br>BVDUT 0.5 AMPS/DIV.<br>LI  [2]<br>WAVAL  � [1] 2 LPK [�] BVDUT–VDD �<br>CHANNEL 1:<br>VDUT<br>EQUATION (2): 500 VOLTS/DIV.<br>LI  [2]<br>WAVAL  � [1] 2 LPK<br>TIME BASE:<br>20 �s/DIV.<br>1 ACQUISITIONS 217:33 HRS<br>SAVEREF SOURCE STACK<br>CH1 CH2 REF REF<br>**----- End of picture text -----**<br>


**Figure 8. Current−Voltage Waveforms** 

## **NOTE 1 — AMBIENT MOUNTING DATA** 

Data shown for thermal resistance junction−to−ambient (R � JA) for the mountings shown is to be used as typical guideline values for preliminary engineering or in case the tie point temperature cannot be measured. 

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TYPICAL VALUES FOR R � JA IN STILL AIR<br>Mounting Lead Length, L (IN)<br>Method 1/8 1/4 1/2 3/4 Units<br>1 50 51 53 55 ° C/W<br>2 R � JA 58 59 61 63 ° C/W<br>3 28 ° C/W<br>MOUNTING METHOD 1 MOUNTING METHOD 2<br>P.C. Board Where Available Copper Vector Push−In Terminals T−28<br>Surface area is small.<br>L L<br>L L<br>ÉÉÉÉÉÉÉÉÉÉÉ ÉÉÉÉÉÉÉÉÉÉÉÉ<br>MOUNTING METHOD 3<br>P.C. Board with<br>1−1/2 ″  x 1−1/2 ″  Copper Surface<br>É L = 1/2 ″<br>É<br>É<br>É<br>É<br>É Board Ground Plane<br>É<br>**----- End of picture text -----**<br>


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**4** 

**MUR490E, MUR4100E** 

## **PACKAGE DIMENSIONS** 

**AXIAL LEAD** CASE 267−05 ISSUE G 

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K A NOTES:<br>1. DIMENSIONS AND TOLERANCING PER ANSI<br>D “T T<br>Y14.5M, 1982.<br>1 2 2. CONTROLLING DIMENSION: INCH.<br>3. 267−04 OBSOLETE, NEW STANDARD 267−05.<br>INCHES MILLIMETERS<br>B DIM MIN MAX MIN MAX<br>K A 0.287 0.374 7.30 9.50<br>B 0.189 0.209 4.80 5.30<br>D 0.047 0.051 1.20 1.30<br>oI aE K 1.000 −−− 25.40 −−−<br>STYLE 1:<br>PIN 1. CATHODE (POLARITY BAND)<br>2. ANODE<br>**----- End of picture text -----**<br>


SWITCHMODE registered trademark of Semiconductor Components Industries, LLC (SCILLC). 

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