MUR220G
Fast / Ultrafast Diode, 200 V, 2 A, Single, 950 mV, 35 ns, 35 A
- Manufacturer: ONSEMI
- Product type: Fast & Ultrafast Recovery Rectifier Diodes
- Repetitive Reverse Voltage Vrrm Max:200V; Forward Current If(AV):2A; Diode Configuration:Single; Forward Voltage VF Max:950mV; Reverse Recovery Time trr Max:35ns; Forward Surge Current Ifsm Ma
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 2 Pin
- Product Range: MUR22
- Qualification: -
- Diode Case Style: Axial Leaded
- Diode Configuration: Single
- Forward Voltage Max: 950mV
- Forward Surge Current: 35A
- Reverse Recovery Time: 35ns
- Average Forward Current: 2A
- Operating Temperature Max: 175°C
- Repetitive Peak Reverse Voltage: 200V
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 0.111 € |
| Current stock | 10+ |
| Lead time | 30 days |
## MUR220 ## **Preferred Device** ## SWITCHMODE Power Rectifier These state−of−the−art devices are designed for use in switching power supplies, inverters and as free wheeling diodes. ## **Features** **http://onsemi.com** - Ultrafast 25 Nanosecond Recovery Times - 175°C Operating Junction Temperature - Low Forward Voltage **ULTRAFAST RECTIFIER 2.0 AMPERES − 200 VOLTS** - Low Leakage Current - High Temperature Glass Passivated Junction - These are Pb−Free Devices* ## **Mechanical Characteristics:** - Case: Epoxy, Molded - Weight: 0.4 Gram (Approximately) - Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable **==> picture [52 x 27] intentionally omitted <==** **----- Start of picture text -----**<br> AXIAL LEAD<br>CASE 059−10<br>PLASTIC<br>**----- End of picture text -----**<br> - Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds - Polarity: Cathode Indicated by Polarity Band **MAXIMUM RATINGS** **MARKING DIAGRAM Rating Symbol Value Unit** Peak Repetitive Reverse Voltage VRRM 200 V Working Peak Reverse Voltage VRWM − DC Blocking Voltage VR A MUR220 Average Rectified Forward Current (Note 1)(Square Wave Mounting Method #3 Per Note 3) IF(AV) TA2.0 @ = 90 ° C A YYWW Non−Repetitive Peak Surge Current IFSM 35 A (Surge applied at rated load conditions, A = Assembly Location halfwave, single phase, 60 Hz) MUR220 = Device Code Operating Junction Temperature and Storage TJ, Tstg −65 to ° C YY = Year Temperature Range +175 WW = Work Week ~~=the~~ = Pb−Free Package **THERMAL CHARACTERISTICS** (Note: Microdot may be in either location) **Characteristic Symbol Max Unit** Thermal Resistance, Junction−to−Ambient R JA (Note 3) ° C/W **ORDERING INFORMATION** Stresses exceeding Maximum Ratings may damage the device. Maximum **Device Package Shipping**[†] Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the MUR220 Axial Lead** 1000 Units / Bulk Recommended Operating Conditions may affect device reliability. MUR220G Axial Lead** 1000 Units / Bulk 1. Pulse Test: Pulse Width = 300 s, Duty Cycle ≤ 2.0%. MUR220RL Axial Lead** 5000 / Tape & Reel MUR220RLG Axial Lead** 5000 / Tape & Reel ~~a~~ †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Pulse Test: Pulse Width = 300 s, Duty Cycle ≤ 2.0%. **This package is inherently Pb−Free. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. **Preferred** devices are recommended choices for future use and best overall value. Publication Order Number: **1** © Semiconductor Components Industries, LLC, 2006 **July, 2006 − Rev. 7** **MUR220/D** **MUR220** ## **ELECTRICAL CHARACTERISTICS** |**ELECTRICAL CHARACTERISTICS**|||| |---|---|---|---| |**Characteristic**|**Symbol**|**Value**|**Unit**| |Maximum Instantaneous Forward Voltage (Note 2)<br>(IF= 2.0 Amp, TJ= 150°C)<br>(IF= 2.0 Amp, TJ= 25°C)|vF|0.75<br>0.95|V| |Maximum Instantaneous Reverse Current (Note 2)<br>(Rated dc Voltage, TJ= 150°C)<br>(Rated dc Voltage, TJ= 25°C)|iR|50<br>2.0|�A| |Maximum Reverse Recovery Time<br>(IF= 1.0 Amp, di/dt = 50 Amp/�s)<br>(IF= 0.5 Amp, IR= 1.0 Amp, IREC= 0.25 A)|trr|35<br>25|ns| |Maximum Forward Recovery Time<br>(IF= 1.0 A, di/dt = 100 A/�s, IRECto 1.0 V)|tfr|25|ns| 2. Pulse Test: Pulse Width = 300 � s, Duty Cycle ≤ 2.0%. **==> picture [487 x 414] intentionally omitted <==** **----- Start of picture text -----**<br> 10 10<br>VF @ 150°C VF @ 150°C<br>1.0 1.0<br>125°C 125°C<br>75°C 75°C<br>25°C 25°C<br>0.1 0.1<br>0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3<br>VF, INSTANTANEOUS VOLTAGE (VOLTS) VF, INSTANTANEOUS VOLTAGE (VOLTS)<br>Figure 1. Maximum Forward Voltage Figure 2. Typical Forward Voltage<br>, INSTANTANEOUS FORWARD CURRENT (AMPS)<br>IF<br>, INSTANTANEOUS FORWARD CURRENT (AMPS)<br>IF<br>**----- End of picture text -----**<br> **http://onsemi.com** **2** **MUR220** **==> picture [488 x 174] intentionally omitted <==** **----- Start of picture text -----**<br> 100 10<br>IR @ 150°C IR @ 150°C<br>125°C 125°C<br>10 1.0<br>75°C<br>75°C<br>1.0 0.1<br>25°C 25°C<br>0.1 0.01<br>0.01 0.001<br>20 40 60 80 100 120 140 160 180 200 20 40 60 80 100 120 140 160 180 200<br>VR, REVERSE VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS)<br>�<br>�<br>, REVERSE CURRENT ( A)<br>IR<br>IR, REVERSE CURRENT ( A)<br>**----- End of picture text -----**<br> **Figure 3. Maximum Reverse Current** **Figure 4. Typical Reverse Current** **==> picture [488 x 178] intentionally omitted <==** **----- Start of picture text -----**<br> 5.0 2.0<br>SQUARE WAVE<br>dc<br>4.0<br>1.5<br>3.0<br>1.0<br>dc<br>2.0<br>SQUARE WAVE 0.5<br>1.0<br>0 0<br>0 50 100 150 200 0 0.5 1.0 1.5 2.0 2.5<br>TA, AMBIENT TEMPERATURE (°C) IF(AV), AVERAGE FORWARD CURRENT (AMPS)<br>, AVERAGE FORWARD CURRENT (AMPS) , AVERAGE POWER DISSIPATION (WATTS)<br>IF(AV) PF(AV)<br>**----- End of picture text -----**<br> **Figure 5. Current Derating** **Figure 6. Power Dissipation** **==> picture [237 x 174] intentionally omitted <==** **----- Start of picture text -----**<br> 50<br>TJ = 25°C<br>30<br>20<br>10<br>7.0<br>5.0<br>0 10 20 30 40 50<br>VR, REVERSE VOLTAGE (VOLTS)<br>C, CAPACITANCE (pF)<br>**----- End of picture text -----**<br> **Figure 7. Typical Capacitance** **http://onsemi.com** **3** **MUR220** **NOTE 3. − AMBIENT MOUNTING DATA** Data shown for Thermal Resistance, Junction−to−Ambient (R�JA) for the mountings shown is to be used as typical guideline values for preliminary engineering or in case the tie point temperature cannot be measured. **==> picture [209 x 491] intentionally omitted <==** **----- Start of picture text -----**<br> TYPICAL VALUES FOR R � JA IN STILL AIR<br>Mounting Lead Length, L<br>Method 1/8 1/4 1/2 Units<br>1 52 65 72 ° C/W<br>2 R � JA 67 80 87 ° C/W<br>3 50 ° C/W<br>MOUNTING METHOD 1<br>L L<br>ÉÉÉÉÉÉÉÉÉÉÉ<br>ÉÉÉÉÉÉÉÉÉÉÉ<br>MOUNTING METHOD 2<br>L L<br>ÉÉÉÉÉÉÉÉÉÉÉÉ<br>ÉÉÉÉÉÉÉÉÉÉÉÉ<br>Vector Pin Mounting<br>MOUNTING METHOD 3<br>ÉÉÉÉ L = 3/8 ″<br>ÉÉ<br>ÉÉ<br>ÉÉ<br>ÉÉ<br>ÉÉ Board Ground Plane<br>P.C. Board with<br>1−1/2 X 1−1/2 Copper Surface ″ ″<br>**----- End of picture text -----**<br> SWITCHMODE is a trademark of Semiconductor Components Industries, LLC. **http://onsemi.com** **4** MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** **==> picture [451 x 350] intentionally omitted <==** **----- Start of picture text -----**<br> AXIAL LEAD<br>CASE 59−10<br>ISSUE U<br>DATE 15 FEB 2005<br>B<br>NOTES:<br>1. DIMENSIONING AND TOLERANCING PER ANSI<br>Y14.5M, 1982.<br>2. CONTROLLING DIMENSION: INCH.<br>K D 3. ALL RULES AND NOTES ASSOCIATED WITHJEDEC DO−41 OUTLINE SHALL APPLY<br>STYLE 1 STYLE 2 4. POLARITY DENOTED BY CATHODE BAND.<br>F 5. LEAD DIAMETER NOT CONTROLLED WITHIN F<br>DIMENSION.<br>A INCHES MILLIMETERS<br>DIM MIN MAX MIN MAX<br>A 0.161 0.205 4.10 5.20<br>SCALE 1:1 OPTIONAL AS NEEDEDPOLARITY INDICATOR(SEE STYLES) F BD 0.0790.028 0.1060.034 2.000.71 2.700.86<br>F −−− 0.050 −−− 1.27<br>K K 1.000 −−− 25.40 −−−<br>GENERIC<br>te| MARKING DIAGRAM*<br> A A<br>STYLE 1: STYLE 2: xxx xxx<br>PIN 1. CATHODE (POLARITY BAND) NO POLARITY<br>2. ANODE xxx xxx<br>4( YYWW GH6G YYWW<br>STYLE 1 STYLE 2<br>xxx = Specific Device Code<br>A = Assembly Location<br>YY = Year<br>WW = Work Week<br>**----- End of picture text -----**<br> **==> picture [159 x 36] intentionally omitted <==** **----- Start of picture text -----**<br> *This information is generic. Please refer to<br>device data sheet for actual part marking.<br>Pb−Free indicator, “G” or microdot “ ”,<br>may or may not be present.<br>**----- End of picture text -----**<br> Electronic versions are uncontrolled except when accessed directly from the Document Repository. **DOCUMENT NUMBER: 98ASB42045B** Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. **DESCRIPTION: AXIAL LEAD PAGE 1 OF 1** ~~[| aT~~ ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. Electronic versions are uncontrolled except when accessed directly from the Document Repository. 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All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. **onsemi** does not convey any license under any of its intellectual property rights nor the rights of others. **onsemi** products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. 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This literature is subject to all applicable copyright laws and is not for resale in any manner. ## **PUBLICATION ORDERING INFORMATION** **LITERATURE FULFILLMENT** : **TECHNICAL SUPPORT Email Requests to:** orderlit@onsemi.com **North American Technical Support: Europe, Middle East and Africa Technical Support:** Voice Mail: 1 800−282−9855 Toll Free USA/Canada Phone: 00421 33 790 2910 **onsemi Website:** www.onsemi.com Phone: 011 421 33 790 2910 For additional information, please contact your local Sales Representative ◊ **==> picture [232 x 43] intentionally omitted <==**
Updated at June 8, 2026
onsemi is a premier global supplier of intelligent power and sensing technologies, driving disruptive innovations across the automotive, industrial, and cloud infrastructure markets. Recognized for their commitment to sustainability and reliable supply chains, the company accelerates advancements in vehicle electrification, industrial automation, and 5G networks by solving the industry's most complex design challenges. At the core of their portfolio is an industry-leading selection of discrete semiconductors. This extensive range features thousands of high-performance bipolar transistors, single and dual MOSFETs, and a comprehensive array of diodes, including Zener, Schottky, and fast-recovery rectifiers. Engineered for superior thermal performance and energy efficiency, these foundational components are critical for demanding power conversion, switching, and signal conditioning applications. Beyond essential discretes, onsemi provides a robust suite of advanced power management and circuit protection solutions. Their lineup includes intelligent power modules, single IGBTs, and transient voltage suppression (TVS) diodes designed to safeguard sensitive circuitry. Complimented by integrated passive filters, AC/DC LED driver ICs, and specialized sub-2.4GHz RF transceivers, onsemi equips engineers with the scalable, high-quality technologies needed to build a cleaner, smarter, and more connected world.
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