MUR2020RG
Fast / Ultrafast Diode, 200 V, 20 A, Single, 1.1 V, 75 ns, 250 A
- Manufacturer: ONSEMI
- Product type: Fast & Ultrafast Recovery Rectifier Diodes
- Repetitive Reverse Voltage Vrrm Max:200V; Forward Current If(AV):20A; Diode Configuration:Single; Forward Voltage VF Max:1.1V; Reverse Recovery Time trr Max:75ns; Forward Surge Current Ifs
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 2 Pin
- Product Range: -
- Qualification: -
- Diode Case Style: TO-220AC
- Diode Configuration: Single
- Forward Voltage Max: 1.1V
- Forward Surge Current: 250A
- Reverse Recovery Time: 75ns
- Average Forward Current: 20A
- Operating Temperature Max: 175°C
- Repetitive Peak Reverse Voltage: 200V
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 0.746 € |
| Current stock | 1000+ |
| Lead time | 30 days |
## MUR2020R ## SWITCHMODE Ultrafast Power Rectifier ## **Features and Benefits** - Reverse Polarity Rectifier - Low Forward Voltage ## **http://onsemi.com** - Low Power Loss/High Efficiency - High Surge Capacity - 175°C Operating Junction Temperature - These are Pb−Free Devices* ## **Applications** - Power Supply – Output Rectification - Power Management - Instrumentation ## **Mechanical Characteristics** - Case: Epoxy, Molded - Epoxy Meets UL 94, V−0 @ 0.125 in - Weight: 1.9 Grams (Approximately) - Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable - Lead Temperatures for Soldering Purposes: 260°C Max. for 10 Seconds - ESD Rating: Human Body Model 3B Machine Model C *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. **ULTRAFAST RECTIFIER 20 AMPERES, 200 VOLTS trr = 95 ns** **==> picture [114 x 348] intentionally omitted <==** **----- Start of picture text -----**<br> 1<br>4<br>3 et?<br>y 4<br>TO−220AC<br>CASE 221B<br>1 STYLE 2<br>3<br>MARKING DIAGRAM<br>nen<br>AY WWG<br>U2020R<br>AK<br>|<br>A = Assembly Location<br>Y = Year<br>WW = Work Week<br>G = Pb−Free Package<br>AK = Diode Polarity<br>**----- End of picture text -----**<br> **==> picture [192 x 56] intentionally omitted <==** **----- Start of picture text -----**<br> ORDERING INFORMATION<br>Device Package Shipping<br>MUR2020RG TO−220AC 50 Units / Rail<br>(Pb−Free)<br>ee<br>**----- End of picture text -----**<br> Publication Order Number: **MUR2020R** / **D** **1** © Semiconductor Components Industries, LLC, 2013 **July, 2013 − Rev. 5** **MUR2020R** ## **MAXIMUM RATINGS** |**MAXIMUM RATINGS**|||| |---|---|---|---| |**Rating**|**Symbol**|**Value**|**Unit**| |Peak Repetitive Reverse Voltage<br>Working Peak Reverse Voltage<br>DC Blocking Voltage|VRRM<br>VRWM<br>VR|200|V| |Average Rectified Forward Voltage,<br>(Rated VR), TC= 125°C|IF(AV)|20|A| |Peak Repetitive Forward Current<br>(Rated VR), TC= 125°C|IFRM|40|A| |Nonrepetitive Peak Surge Current<br>(Surge applied at rated load conditions halfwave, single phase, 60 Hz)|IFSM|250|A| |OperatingJunction Temperature and Storage Temperature Range|TJ, Tstg|−65 to +175|°C| Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. ## **THERMAL CHARACTERISTICS** |**THERMAL CHARACTERISTICS**||||| |---|---|---|---|---| |**Characteristic**|**Conditions**|**Symbol**|**Max**|**Unit**| |Maximum Thermal Resistance, Junction−to−Case|Min. Pad|R�JC|2.0|°C/W| |Maximum Thermal Resistance, Junction−to−Ambient|Min. Pad|R�JA|70|| ## **ELECTRICAL CHARACTERISTICS** |**ELECTRICAL CHARACTERISTICS**|||||| |---|---|---|---|---|---| |**Characteristic**|**Symbol**|**Min**|**Typical**|**Max**|**Unit**| |Instantaneous Forward Voltage (Note 1)<br>(iF= 20 Amps, Tj= 25°C)<br>(iF= 20 Amps, Tj = 150°C)|vF|−<br>−|0.97<br>0.79|1.1<br>1.0|V| |Instantaneous Reverse Current (Note 1)<br>(Rated dc Voltage, Tj = 25°C)<br>(Rated dc Voltage, Tj = 150°C)|iR|−<br>−|0.1<br>0.225|50<br>1.0|�A<br>mA| |Maximum Reverse Recovery Time<br>(IF= 1.0 Amps, di/dt = 50 A/�s)<br>(IF= 1.0 Amps, di/dt = 100 A/�s)|trr|−<br>−|−<br>−|95<br>75|ns| 1. Pulse Test: Pulse Width = 5.0 ms, Duty Cycle ≤ 10%. **http://onsemi.com** **2** **MUR2020R** ## **TYPICAL CHARACTERISTICS** **==> picture [492 x 611] intentionally omitted <==** **----- Start of picture text -----**<br> 40 20<br>TJ = 175 ° C<br>dc<br>30 15 Square Wave<br>TJ = 175 ° C dc<br>20 10<br>Square Wave<br>10 5<br>0 0<br>0 50 100 150 200 0 5 10 15 20 25<br>TC, CASE TEMPERATURE ( ° C) IF(AV), AVERAGE FORWARD CURRENT (AMPS)<br>Figure 1. Current Derating Figure 2. Power Dissipation<br>100 1000.00<br>Ir @ 175 ° C<br>VF @ 175 ° C<br>Ir @ 100 ° C<br>10 VF @ 25 ° C 100.00<br>VF @ 100 ° C<br>Ir @ 25 ° C<br>1 10.00<br>0.1 1.00<br>0.3 0.5 0.7 0.9 1.1 1.3 1.5 0 50 100 150 200<br>VF, INSTANTANEOUS VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS)<br>Figure 3. Maximum Forward Voltage Figure 4. Maximum Reverse Current<br>100 1000.000<br>VF @ 175 ° C 100.000 Ir @ 175 ° C<br>Ir @ 100 ° C<br>10 VF @ 25 ° C 10.00<br>1.000<br>1 0.100 Ir @ 25 ° C<br>VF @ 100 ° C<br>0.010<br>0.1 0.001<br>0.3 0.5 0.7 0.9 1.1 1.3 1.5 0 50 100 150 200<br>VF, INSTANTANEOUS VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS)<br>(WATTS)<br>, AVERAGE FORWARD<br>IF(AV) AVERAGE POWER DISSIPATIONF(AV),<br>P<br>A)<br>�<br>(AMPS)<br>, REVERSE CURRENT (<br>IR<br>, INSTANTANEOUS FORWARD CURRENT<br>IF<br>A)<br>�<br>(AMPS)<br>, REVERSE CURRENT (<br>IR<br>, INSTANTANEOUS FORWARD CURRENT<br>IF<br>**----- End of picture text -----**<br> **Figure 5. Typical Forward Voltage** **Figure 6. Typical Reverse Current** **http://onsemi.com** **3** **MUR2020R** ## **TYPICAL CHARACTERISTICS** **==> picture [492 x 399] intentionally omitted <==** **----- Start of picture text -----**<br> 10000 10000<br>TJ = 25 ° C<br>1000 1000<br>TJ = 25 ° C<br>100 100<br>0.1 1 10 100 0.1 1 10 100<br>VR, REVERSE VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS)<br>Figure 7. Maximum Capacitance Figure 8. Typical Capacitance<br>10<br>1 D = 0.5<br>0.1<br>0.05<br>0.1 Z � JC(t) = r(t) R � JC<br>0.1 P(pk) D CURVES APPLY FOR POWER<br>t1 PULSE TRAIN SHOWN<br>0.01 t2 READ TIME AT T1<br>DUTY CYCLE, D = t1/t2 TJ(pk) − TC = P(pk) Z � JC(t)<br>Single Pulse<br>0.001<br>0.0000001 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100<br>t, TIME (s)<br>C, CAPACITANCE (pF) C, CAPACITANCE (pF)<br>C/W)<br>°<br>, TRANSIENT THERMAL RESISTANCE (<br>jc(t)<br>R<br>**----- End of picture text -----**<br> **Figure 9. Thermal Response** **http://onsemi.com** **4** MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** **==> picture [470 x 282] intentionally omitted <==** **----- Start of picture text -----**<br> TO−220, 2−LEAD<br>CASE 221B−04<br>ISSUE F<br>DATE 12 APR 2013<br>o<br>NOTES:<br>C 1. DIMENSIONING AND TOLERANCING PER ANSI<br>Y14.5M, 1982.<br>Q B F T S 2. CONTROLLING DIMENSION: INCH.<br>INCHES MILLIMETERS<br>DIM MIN MAX MIN MAX<br>SCALE 1:1 4 A 0.595 0.620 15.11 15.75<br>B 0.380 0.405 9.65 10.29<br>ae A Lt Bobs, C 0.160 0.190 4.06 4.82<br>U D 0.025 0.039 0.64 1.00<br>1 3 F 0.142 0.161 3.61 4.09<br>H G 0.190 0.210 4.83 5.33<br>H 0.110 0.130 2.79 3.30<br>K J 0.014 0.025 0.36 0.64<br>K 0.500 0.562 12.70 14.27<br>L 0.045 0.060 1.14 1.52<br>Q 0.100 0.120 2.54 3.04<br>L R 0.080 0.110 2.04 2.79<br>D R S 0.045 0.055 1.14 1.39<br>T 0.235 0.255 5.97 6.48<br>G J U 0.000 0.050 0.000 1.27<br>STYLE 1: STYLE 2:<br>PIN 1. CATHODE PIN 1. ANODE<br> 2. N/A 2. N/A<br> 3. ANODE 3. CATHODE<br> 4. CATHODE 4. ANODE<br>**----- End of picture text -----**<br> **DOCUMENT NUMBER: 98ASB42149B DESCRIPTION: TO−220, 2−LEAD** ~~_~~ Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. **PAGE 1 OF 1** ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. 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Updated at June 8, 2026
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