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MUR105G
Fast / Ultrafast Diode, 50 V, 1 A, Single, 875 mV, 35 ns, 35 A
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: ONSEMI
- Product type: Fast & Ultrafast Recovery Rectifier Diodes
- No. of Pins: 2 Pin
- Product Range: MUR1xx
- Diode Case Style: Axial Leaded
- Diode Configuration: Single
- Forward Voltage Max: 875mV
- Forward Surge Current: 35A
- Reverse Recovery Time: 35ns
- Average Forward Current: 1A
- Operating Temperature Max: 175°C
- Repetitive Peak Reverse Voltage: 50V
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 0.09 € |
| Current stock | 10+ |
| Lead time | 7 days |
Datasheet
## MUR120 Series ## SWITCHMODE Power Rectifiers ## **MUR105, MUR110, MUR115, MUR120, MUR130, MUR140, MUR160** **http://onsemi.com** The MUR120 series of SWITCHMODE power rectifiers are designed for use in switching power supplies, inverters and as free wheeling diodes. **ULTRAFAST RECTIFIERS 1.0 AMPERE, 50 − 600 VOLTS** ## **Features** - Ultrafast 25, 50 and 75 Nanosecond Recovery Times - 175°C Operating Junction Temperature - Low Forward Voltage - Low Leakage Current - High Temperature Glass Passivated Junction - Reverse Voltage to 600 V - Shipped in Plastic Bags; 1,000 per Bag - Available Tape and Reel; 5,000 per Reel, by adding a “RL’’ Suffix to the Part Number - These are Pb−Free Devices* ## **Mechanical Characteristics:** - Case: Epoxy, Molded - Weight: 0.4 Gram (Approximately) **==> picture [49 x 27] intentionally omitted <==** **----- Start of picture text -----**<br> AXIAL LEAD<br>CASE 59<br>STYLE 1<br>**----- End of picture text -----**<br> - Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable - Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds - Polarity: Cathode Indicated by Polarity Band **==> picture [90 x 7] intentionally omitted <==** **----- Start of picture text -----**<br> MARKING DIAGRAM<br>**----- End of picture text -----**<br> A MUR 1xx YYWW ~~CB~~ A = Assembly Location MUR1xx= Specific Device Code Y = Year WW = Work Week = Pb−Free Package (Note: Microdot may be in either location) ## **ORDERING INFORMATION** See detailed ordering and shipping information in the package dimensions section on page 6 of this data sheet. > *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Publication Order Number: **MUR120/D** **1** © Semiconductor Components Industries, LLC, 2013 **May, 2013 − Rev. 12** **MUR120 Series** ## **MAXIMUM RATINGS** |**MAXIMUM RATINGS**|||||||||| |---|---|---|---|---|---|---|---|---|---| |**Rating**|**Symbol**|**MUR**|||||||**Unit**| |||**105**|**110**|**115**|**120**|**130**|**140**|**160**|| |Peak Repetitive Reverse Voltage<br>Working Peak Reverse Voltage<br>DC Blocking Voltage|VRRM<br>VRWM<br>VR|50|100|150|200|300|400|600|V| |Average Rectified Forward Current<br>(Square Wave Mounting Method #3 Per Note 2)|IF(AV)|1.0 @ TA= 130°C||||1.0 @ TA= 120°C|||A| |Nonrepetitive Peak Surge Current<br>(Surge applied at rated load conditions, halfwave,<br>single phase, 60 Hz)|IFSM|35|||||||A| |Operating Junction Temperature and Storage Temperature|TJ, Tstg|�65 to +175|||||||°C| Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. ## **THERMAL CHARACTERISTICS** |**THERMAL CHARACTERISTICS**|||| |---|---|---|---| |**Characteristic**|**Symbol**|**Max**|**Unit**| |Maximum Thermal Resistance, Junction−to−Ambient|R�JA|Note 2|°C/W| ## **ELECTRICAL CHARACTERISTICS** |**ELECTRICAL CHARACTERISTICS**||||| |---|---|---|---|---| |**Characteristic**|**Symbol**|**Value**||**Unit**| |Maximum Instantaneous Forward Voltage (Note 1)<br>(iF= 1.0 Amp, TJ= 150°C)<br>(iF= 1.0 Amp, TJ= 25°C)|vF|0.710<br>0.875|1.05<br>1.25|V| |Maximum Instantaneous Reverse Current (Note 1)<br>(Rated DC Voltage, TJ= 150°C)<br>(Rated DC Voltage, TJ= 25°C)|iR|50<br>2.0|150<br>5.0|�A| |Maximum Reverse Recovery Time<br>(IF= 1.0 A, di/dt = 50 A/�s)<br>(IF= 0.5 A, iR= 1.0 A, IREC= 0.25 A)|trr|35<br>25|75<br>50|ns| |Maximum Forward Recovery Time<br>(IF= 1.0 A, di/dt = 100 A/�s, IRECto 1.0 V)|tfr|25|50|ns| |Typical Peak Reverse Recovery Current<br>(IF= 1.0 A, di/dt = 50 A/�s)|IRM|0.85||A| 1. Pulse Test: Pulse Width = 300 � s, Duty Cycle ≤ 2.0%. **http://onsemi.com** **2** **MUR120 Series** ## **MUR105, MUR110, MUR115, MUR120** **==> picture [242 x 616] intentionally omitted <==** **----- Start of picture text -----**<br> 10<br>7.0<br>5.0<br>3.0<br>TJ = 175°C 100°C<br>2.0<br>25°C<br>1.0<br>0.7<br>0.5<br>0.3<br>0.2<br>0.1<br>0.07<br>0.05<br>0.03<br>0.02<br>0.01<br>0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3<br>vF, INSTANTANEOUS VOLTAGE (VOLTS)<br>Figure 1. Typical Forward Voltage<br>5.0<br>T J = 175°C (CAPACITIVE�LOAD) I PK � 20<br>4.0 I AV 10<br>5.0<br>3.0<br>2.0<br>dc<br>1.0<br>SQUARE WAVE<br>0<br>0 0.5 1.0 1.5 2.0 2.5<br>IF(AV), AVERAGE FORWARD CURRENT (AMPS)<br>, INSTANTANEOUS FORWARD CURRENT (AMPS)<br>iF<br>, AVERAGE POWER DISSIPATION (WATTS)<br>PF(AV)<br>**----- End of picture text -----**<br> **Figure 4. Power Dissipation** **==> picture [241 x 173] intentionally omitted <==** **----- Start of picture text -----**<br> 100<br>TJ = 175°C<br>10<br>1.0 100°C<br>0.1<br>0.01 25°C<br>0.001<br>0 20 40 60 80 100 120 140 160 180 200<br>VR, REVERSE VOLTAGE (VOLTS)<br>�<br>, REVERSE CURRENT ( A)<br>IR<br>**----- End of picture text -----**<br> **Figure 2. Typical Reverse Current*** * The curves shown are typical for the highest voltage device in the voltage grouping. Typical reverse current for lower voltage selections can be estimated from these same curves if VR is sufficiently below rated VR. **==> picture [240 x 172] intentionally omitted <==** **----- Start of picture text -----**<br> 5.0<br>4.0 RATED V R<br>R �JA = 50°C/W<br>3.0<br>2.0 dc<br>SQUARE WAVE<br>1.0<br>0<br>0 50 100 150 200 250<br>TA, AMBIENT TEMPERATURE (°C)<br>, AVERAGE FORWARD CURRENT (AMPS)<br>IF(AV)<br>**----- End of picture text -----**<br> **Figure 3. Current Derating (Mounting Method #3 Per Note 1)** **==> picture [237 x 174] intentionally omitted <==** **----- Start of picture text -----**<br> 50<br>TJ = 25°C<br>30<br>20<br>10<br>7.0<br>5.0<br>0 10 20 30 40 50<br>VR, REVERSE VOLTAGE (VOLTS)<br>C, CAPACITANCE (pF)<br>**----- End of picture text -----**<br> **Figure 5. Typical Capacitance** **http://onsemi.com** **3** **MUR120 Series** ## **MUR130, MUR140, MUR160** **==> picture [242 x 616] intentionally omitted <==** **----- Start of picture text -----**<br> 10<br>7.0<br>5.0<br>3.0<br>TJ = 175°C 100°C<br>2.0<br>25°C<br>1.0<br>0.7<br>0.5<br>0.3<br>0.2<br>0.1<br>0.07<br>0.05<br>0.03<br>0.02<br>0.01<br>0.3 0.5 0.7 0.9 1.1 1.3 1.5 1.7 1.9 2.1 2.3<br>vF, INSTANTANEOUS VOLTAGE (VOLTS)<br>Figure 6. Typical Forward Voltage<br>5.0<br>T J = 175°C<br>4.0<br>5.0<br>3.0 (CAPACITIVE LOAD) 10<br>I<br>PK � 20 dc<br>2.0 I<br>AV<br>SQUARE WAVE<br>1.0<br>0<br>0 0.5 1.0 1.5 2.0 2.5<br>IF(AV), AVERAGE FORWARD CURRENT (AMPS)<br>, INSTANTANEOUS FORWARD CURRENT (AMPS)<br>iF<br>, AVERAGE POWER DISSIPATION (WATTS)<br>PF(AV)<br>**----- End of picture text -----**<br> **Figure 9. Power Dissipation** **==> picture [242 x 173] intentionally omitted <==** **----- Start of picture text -----**<br> 400<br>100 TJ = 175°C<br>40<br>10<br>4.0 100°C<br>1.0<br>0.4<br>0.1 25°C<br>0.04<br>0.01<br>0.004<br>0 100 200 300 400 500 600 700<br>VR, REVERSE VOLTAGE (VOLTS)<br>�<br>, REVERSE CURRENT ( A)<br>IR<br>**----- End of picture text -----**<br> **Figure 7. Typical Reverse Current*** * The curves shown are typical for the highest voltage device in the voltage grouping. Typical reverse current for lower voltage selections can be estimated from these same curves if VR is sufficiently below rated VR. **==> picture [240 x 172] intentionally omitted <==** **----- Start of picture text -----**<br> 5.0<br>4.0 RATED V R<br>R �JA = 50°C/W<br>3.0<br>2.0<br>dc<br>1.0<br>SQUARE WAVE<br>0<br>0 50 100 150 200 250<br>TA, AMBIENT TEMPERATURE (°C)<br>, AVERAGE FORWARD CURRENT (AMPS)<br>IF(AV)<br>**----- End of picture text -----**<br> **Figure 8. Current Derating (Mounting Method #3 Per Note 2)** **==> picture [237 x 174] intentionally omitted <==** **----- Start of picture text -----**<br> 20<br>TJ = 25°C<br>10<br>7.0<br>5.0<br>3.0<br>2.0<br>0 10 20 30 40 50<br>VR, REVERSE VOLTAGE (VOLTS)<br>C, CAPACITANCE (pF)<br>**----- End of picture text -----**<br> **Figure 10. Typical Capacitance** **http://onsemi.com** **4** **MUR120 Series** **NOTE 2. — AMBIENT MOUNTING DATA** Data shown for thermal resistance, junction−to−ambient (R�JA) for the mountings shown is to be used as typical guideline values for preliminary engineering or in case the tie point temperature cannot be measured. **==> picture [209 x 491] intentionally omitted <==** **----- Start of picture text -----**<br> TYPICAL VALUES FOR R � JA IN STILL AIR<br>Mounting Lead Length, L (in.)<br>Method 1/8 1/4 1/2 Units<br>1 52 65 72 ° C/W<br>2 R � JA 67 80 87 ° C/W<br>3 50 ° C/W<br>MOUNTING METHOD 1<br>L L<br>ÉÉÉÉÉÉÉÉÉÉÉ<br>ÉÉÉÉÉÉÉÉÉÉÉ<br>MOUNTING METHOD 2<br>L L<br>ÉÉÉÉÉÉÉÉÉÉÉÉ<br>ÉÉÉÉÉÉÉÉÉÉÉÉ<br>Vector Pin Mounting<br>MOUNTING METHOD 3<br>ÉÉÉÉ L = 3/8 ″<br>ÉÉ<br>ÉÉ<br>ÉÉ<br>ÉÉ Board Ground Plane<br>ÉÉ<br>P.C. Board with<br>1−1/2 X 1−1/2 Copper Surface ″ ″<br>**----- End of picture text -----**<br> # **http://onsemi.com 5** **MUR120 Series** ## **ORDERING INFORMATION** |**ORDERING INFORMATION**|||| |---|---|---|---| |**Device**|**Marking**|**Package**|**Shipping**†| |MUR105|MUR105|Axial Lead*|1000 Units / Bag| |MUR105G|MUR105|Axial Lead*|1000 Units / Bag| |MUR105RL|MUR105|Axial Lead*|5000 Units / Tape & Reel| |MUR105RLG|MUR105|Axial Lead*|5000 Units / Tape & Reel| |MUR110|MUR110|Axial Lead*|1000 Units / Bag| |MUR110G|MUR110|Axial Lead*|1000 Units / Bag| |MUR110RL|MUR110|Axial Lead*|5000 Units / Tape & Reel| |MUR110RLG|MUR110|Axial Lead*|5000 Units / Tape & Reel| |MUR115|MUR115|Axial Lead*|1000 Units / Bag| |MUR115G|MUR115|Axial Lead*|1000 Units / Bag| |MUR115RL|MUR115|Axial Lead*|5000 Units / Tape & Reel| |MUR115RLG|MUR115|Axial Lead*|5000 Units / Tape & Reel| |MUR120|MUR120|Axial Lead*|1000 Units / Bag| |MUR120G|MUR120|Axial Lead*|1000 Units / Bag| |MUR120RL|MUR120|Axial Lead*|5000 Units / Tape & Reel| |MUR120RLG|MUR120|Axial Lead*|5000 Units / Tape & Reel| |MUR130|MUR130|Axial Lead*|1000 Units / Bag| |MUR130G|MUR130|Axial Lead*|1000 Units / Bag| |MUR130RL|MUR130|Axial Lead*|5000 Units / Tape & Reel| |MUR130RLG|MUR130|Axial Lead*|5000 Units / Tape & Reel| |MUR140|MUR140|Axial Lead*|1000 Units / Bag| |MUR140G|MUR140|Axial Lead*|1000 Units / Bag| |MUR140RL|MUR140|Axial Lead*|5000 Units / Tape & Reel| |MUR140RLG|MUR140|Axial Lead*|5000 Units / Tape & Reel| |MUR160|MUR160|Axial Lead*|1000 Units / Bag| |MUR160G|MUR160|Axial Lead*|1000 Units / Bag| |MUR160RL|MUR160|Axial Lead*|5000 Units / Tape & Reel| |MUR160RLG|MUR160|Axial Lead*|5000 Units / Tape & Reel| †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *This package is inherently Pb−Free. **http://onsemi.com** **6** **MUR120 Series** ## **PACKAGE DIMENSIONS** ## **AXIAL LEAD** CASE 59−10 ISSUE U NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. **B** Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. ALL RULES AND NOTES ASSOCIATED WITH JEDEC DO−41 OUTLINE SHALL APPLY 4. POLARITY DENOTED BY CATHODE BAND. 5. LEAD DIAMETER NOT CONTROLLED WITHIN F DIMENSION. **K D INCHES MILLIMETERS DIM MIN MAX MIN MAX F A** 0.161 0.205 4.10 5.20 **B** 0.079 0.106 2.00 2.70 **D** 0.028 0.034 0.71 0.86 **A F** −−− 0.050 −−− 1.27 **K** 1.000 −−− 25.40 −−− **POLARITY INDICATOR OPTIONAL AS NEEDED F** STYLE 1: **(SEE STYLES)** PIN 1. CATHODE (POLARITY BAND) 2. ANODE **K** ~~,_|~~ cau **ON Semiconductor** and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. 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This literature is subject to all applicable copyright laws and is not for resale in any manner. ## **PUBLICATION ORDERING INFORMATION** ## **LITERATURE FULFILLMENT** : Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA **Phone** : 303−675−2175 or 800−344−3860 Toll Free USA/Canada **Fax** : 303−675−2176 or 800−344−3867 Toll Free USA/Canada **Email** : orderlit@onsemi.com **N. American Technical Support** : 800−282−9855 Toll Free **ON Semiconductor Website** : **www.onsemi.com** USA/Canada **Europe, Middle East and Africa Technical Support: Order Literature** : http://www.onsemi.com/orderlit Phone: 421 33 790 2910 **Japan Customer Focus Center** For additional information, please contact your local Phone: 81−3−5817−1050 Sales Representative **http://onsemi.com** **MUR120/D** **7**
Updated at February 9, 2023
onsemi is a premier global supplier of intelligent power and sensing technologies, driving disruptive innovations across the automotive, industrial, and cloud infrastructure markets. Recognized for their commitment to sustainability and reliable supply chains, the company accelerates advancements in vehicle electrification, industrial automation, and 5G networks by solving the industry's most complex design challenges. At the core of their portfolio is an industry-leading selection of discrete semiconductors. This extensive range features thousands of high-performance bipolar transistors, single and dual MOSFETs, and a comprehensive array of diodes, including Zener, Schottky, and fast-recovery rectifiers. Engineered for superior thermal performance and energy efficiency, these foundational components are critical for demanding power conversion, switching, and signal conditioning applications. Beyond essential discretes, onsemi provides a robust suite of advanced power management and circuit protection solutions. Their lineup includes intelligent power modules, single IGBTs, and transient voltage suppression (TVS) diodes designed to safeguard sensitive circuitry. Complimented by integrated passive filters, AC/DC LED driver ICs, and specialized sub-2.4GHz RF transceivers, onsemi equips engineers with the scalable, high-quality technologies needed to build a cleaner, smarter, and more connected world.
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