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MUBW15-12A6K
IGBT Module, Three Phase Inverter, 19 A, 3 V, 90 W, 125 °C, Module
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: IXYS SEMICONDUCTOR
- Product type: IGBT Modules
- Transistor Polarity:N Channel; DC Collector Current:19A; Collector Emitter Saturation Voltage Vce(on):3V; Power Dissipation Pd:90W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Cas
- SVHC: No SVHC (12-Jan-2017)
- No. of Pins: 25Pins
- Product Range: -
- IGBT Technology: NPT IGBT [Standard]
- IGBT Termination: Solder
- Power Dissipation: 90W
- IGBT Configuration: Three Phase Inverter
- Transistor Mounting: Panel
- Transistor Polarity: N Channel
- DC Collector Current: 19A
- Power Dissipation Pd: 90W
- Transistor Case Style: Module
- Operating Temperature Max: 125°C
- Junction Temperature Tj Max: 125°C
- Continuous Collector Current: 19A
- Collector Emitter Voltage Max: 1.2kV
- Collector Emitter Voltage V(br)ceo: 1.2kV
- Collector Emitter Saturation Voltage: 3V
- Collector Emitter Saturation Voltage Vce(on): 3V
| Delivery and price | |
|---|---|
| Units per pack | 5 |
| Price | 38.25 € |
| Current stock | 50+ |
| Lead time | 7 days |
Datasheet
**MUBW15-12A6K** ## **Converter - Brake - Inverter** **Module** (CBI 1) NPT IGBT |**Three Phase**<br>**Rectifier**|**Brake**<br>**Chopper**|**Three Phase**<br>**Inverter**| |---|---|---| |VRRM = 1600 V|VCES = 1200 V|VCES = 1200 V| |IDAVM25 = 130 A|IC25<br>=<br>19 A|IC25<br>=<br>19 A| |IFSM<br>= 300 A|VCE(sat) = 2.9 V|VCE(sat) = 2.9 V| **Part name** (Marking on product) ## MUBW15-12A6K **==> picture [108 x 24] intentionally omitted <==** **----- Start of picture text -----**<br> E72873<br>Pin configuration see outlines.<br>**----- End of picture text -----**<br> ## **Features:** - High level of integration - only one power semiconductor module required for the whole drive - Inverter with NPT IGBTs - low saturation voltage - positive temperature coefficient ## **Application:** AC motor drives with - Input from single or three phase grid - Three phase synchronous or asynchronous motor - Electric braking operation ## **Package:** - UL registered - Industry standard E1-pack - fast switching - short tail current - Epitaxial free wheeling diodes with hiperfast and soft reverse recovery - Industry standard package with insu lated copper base plate and soldering pins for PCB mounting - Temperature sense included IXYS reserves the right to change limits, test conditions and dimensions. 20071113a © 2007 IXYS All rights reserved 1 - 9 **MUBW15-12A6K** ## **Ouput Inverter T1 - T6** |**Ratings**|**Ratings**|**Ratings**|**Ratings**| |---|---|---|---| |**Symbol**<br>**Defnitions**<br>**Conditions**<br>**min.**|**typ.**|**max.**|**Unit**| |**VCES**<br>_collector emitter voltage_<br>TVJ= 25°C to 150°C||1200|V| |**VGES**<br>**VGEM**<br>_max. DC gate voltage_<br>_max. transient collector gate voltage_<br>continuous<br>transient||±20<br>±30|V<br>V| |**IC25**<br>**IC80**<br>_collector current_<br>TC= 25°C<br>TC= 80°C||19<br>13|A<br>A| |**Ptot**<br>_total power dissipation_<br>TC= 25°C||90|W| |**VCE(sat)**<br>_collector emitter saturation voltage_<br>IC= 15 A; VGE= 15 V<br>TVJ= 25°C<br>TVJ= 125°C|3.0<br>3.5|3.4|V<br>V| |**VGE(th)**<br>_gate emitter threshold voltage_<br>IC= 0.35 mA; VGE= VCE<br>TVJ= 25°C<br>4.5||6.5|V| |**ICES**<br>_collector emitter leakage current_<br>VCE= VCES; VGE= 0 V<br>TVJ= 25°C<br>TVJ= 125°C|1.3|0.6|mA<br>mA| |**IGES**<br>_gate emitter leakage current_<br>VCE= 0 V; VGE= ±20 V||100|nA| |**Cies**<br>_input capacitance_<br>VCE= 25 V; VGE= 0 V; f = 1 MHz|600||pF| |**QG(on)**<br>_total gate charge_<br>VCE= 600 V; VGE= 15 V; IC= 10 A|45||nC| |**td(on)**<br>**tr**<br>**td(off)**<br>**tf**<br>**Eon**<br>**Eoff**<br>_turn-on delay time_<br>_current rise time_<br>_turn-off delay time_<br>_current fall time_<br>_turn-on energy per pulse_<br>_turn-off energy per pulse_<br>inductive load<br>TVJ= 125°C<br>VCE= 600 V; IC= 10 A<br>VGE= ±15 V; RG= 82W|50<br>40<br>290<br>60<br>1.2<br>1.1||ns<br>ns<br>ns<br>ns<br>mJ<br>mJ| |**ICM**<br>_reverse bias safe operating area_<br>RBSOA; VGE= ±15 V; RG= 82W<br>L = 100 µH;clamped induct. loadTVJ= 125°C<br>VCEmax= VCES- LS**·**di/dt|26||A| |**tSC**<br>**(SCSOA)**<br>_short circuit safe operating area_<br>VCE= 720 V; VGE= ±15 V;<br>TVJ= 125°C<br>RG= 82W; non-repetitive|10||µs| |**RthJC**<br>_thermal resistance junction to case_<br>(per IGBT)||1.35|K/W| |**RthCH**<br>_thermal resistance case to heatsink_<br>(per IGBT)|0.5||K/W| |**Output Inverter D1 - D6**|**Output Inverter D1 - D6**|**Output Inverter D1 - D6**|**Output Inverter D1 - D6**| |---|---|---|---| |**Ratings**|||| |**Symbol**<br>**Defnitions**<br>**Conditions**<br>**min.**|**typ.**|**max.**|**Unit**| |**VRRM**<br>_max. repetitve reverse voltage_<br>TVJ= 150°C<br>**IF25**<br>**IF80**<br>_forward current_<br>TC= 25°C<br>TC= 80°C||1200<br>26<br>17|V<br>A<br>A| |**VF**<br>_forward voltage_<br>IF= 30 A; VGE= 0 V<br>TVJ= 25°C<br>TVJ= 125°C|2.3|3.4|V<br>V| |**IRM**<br>**trr**<br>**Erec(off)**<br>_max. reverse recovery current_<br>_reverse recovery time_<br>_reverse recovery energy_<br>VR= 600 V<br>diF/dt = -400 A/µs<br>TVJ= 100°C<br> IF= 15 A; VGE= 0 V|16<br>130<br>tbd||A<br>ns<br>µJ| |**RthJC**<br>_thermal resistance junction to case_<br>(per diode)||1.6|K/W| |**RthCH**<br>_thermal resistance case to heatsink_<br>(per diode)|0.55||K/W| TC = 25°C unless otherwise stated IXYS reserves the right to change limits, test conditions and dimensions. 20071113a © 2007 IXYS All rights reserved 2 - 9 **MUBW15-12A6K** |**Brake Chopper T7**|**Brake Chopper T7**|**Brake Chopper T7**|**Brake Chopper T7**| |---|---|---|---| |**Ratings**|||| |**Symbol**<br>**Defnitions**<br>**Conditions**<br>**min.**|**typ.**|**max.**|**Unit**| |**VCES**<br>_collector emitter voltage_<br>TVJ= 25°C to 150°C||1200|V| |**VGES**<br>**VGEM**<br>_max. DC gate voltage_<br>_max. transient collector gate voltage_<br>continuous<br>transient||±20<br>±30|V<br>V| |**IC25**<br>**IC80**<br>_collector current_<br>TC= 25°C<br>TC= 80°C||19<br>13|A<br>A| |**Ptot**<br>_total power dissipation_<br>TC= 25°C||90|W| |**VCE(sat)**<br>_collector emitter saturation voltage_<br>IC= 15 A; VGE= 15 V<br>TVJ= 25°C<br>TVJ= 125°C|2.9<br>3.5|3.4|V<br>V| |**VGE(th)**<br>_gate emitter threshold voltage_<br>IC= 0.4 mA; VGE= VCE<br>TVJ= 25°C<br>4.5||6.5|V| |**ICES**<br>_collector emitter leakage current_<br>VCE= VCES; VGE= 0 V<br>TVJ= 25°C<br>TVJ= 125°C|0.8|0.5|mA<br>mA| |**IGES**<br>_gate emitter leakage current_<br>VCE= 0 V; VGE= ±20 V||100|nA| |**Cies**<br>_input capacitance_<br>VCE= 25 V; VGE= 0 V; f = 1 MHz|600||pF| |**QG(on)**<br>_total gate charge_<br>VCE= 600 V; VGE= 15 V; IC= 10 A|45||nC| |**td(on)**<br>**tr**<br>**td(off)**<br>**tf**<br>**Eon**<br>**Eoff**<br>_turn-on delay time_<br>_current rise time_<br>_turn-off delay time_<br>_current fall time_<br>_turn-on energy per pulse_<br>_turn-off energy per pulse_<br>inductive load<br>TVJ= 125°C<br>VCE= 600 V; IC= 10 A<br>VGE= ±15 V; RG= 82W|45<br>40<br>290<br>60<br>1.2<br>1.1||ns<br>ns<br>ns<br>ns<br>mJ<br>mJ| |**ICM**<br>_reverse bias safe operating area_<br>RBSOA; VGE= ±15 V; RG= 82W<br>L = 100 µH;clamped induct. loadTVJ= 125°C<br>VCEmax= VCES- LS**·**di/dt|20||A| |**tSC**<br>**(SCSOA)**<br>_short circuit safe operating area_<br>VCE= 720 V; VGE= ±15 V;<br>TVJ= 125°C<br>RG= 82W; non-repetitive|10||µs| |**RthJC**<br>_thermal resistance junction to case_<br>(per IGBT)||1.35|K/W| |**RthCH**<br>_thermal resistance case to heatsink_<br>(per IGBT)|0.45||K/W| |**Brake Chopper D7**|**Brake Chopper D7**|**Brake Chopper D7**|**Brake Chopper D7**| |---|---|---|---| |**Ratings**|||| |**Symbol**<br>**Defnitions**<br>**Conditions**<br>**min.**|**typ.**|**max.**|**Unit**| |**VRRM**<br>_max. repetitive reverse voltage_<br>TVJ= 150°C||1200|V| |**IF25**<br>**IF80**<br>_forward current_<br>TC= 25°C<br>TC= 80°C||15<br>10|A<br>A| |**VF**<br>_forward voltage_<br>IF= 15 A; VGE= 0 V<br>TVJ= 25°C<br>TVJ= 125°C|2.0|3.5|V<br>V| |**IR**<br>_reverse current_<br>VR= VRRM<br>TVJ= 25°C<br>TVJ= 125°C|0.2|0.06|mA<br>mA| |**IRM**<br>**trr**<br>_max. reverse recovery current_<br>_reverse recovery time_<br>VR= 600 V; IF= 10 A<br>diF/dt = -400 A/µs<br>TVJ= 100°C|13<br>110||A<br>ns| |**RthJC**<br>_thermal resistance junction to case_<br>(per diode)||2.5|K/W| |**RthCH**<br>_thermal resistance case to heatsink_<br>(per diode)|0.85||K/W| TC = 25°C unless otherwise stated IXYS reserves the right to change limits, test conditions and dimensions. 20071113a © 2007 IXYS All rights reserved 3 - 9 **MUBW15-12A6K** ## **Input Rectifier Bridge D8 - D13** |**Input Rectifer Bridge D8 - D13**|**Input Rectifer Bridge D8 - D13**|**Input Rectifer Bridge D8 - D13**|**Input Rectifer Bridge D8 - D13**| |---|---|---|---| |**Symbol**<br>**Defnitions**<br>**Conditions**<br>Maximum Ratings|||| |**VRRM**<br>_max. repetitive reverse voltage_<br>1600|||V| |**IFAV**<br>**IDAVM**<br>**IFSM**<br>_average forward current_<br>_max. average DC output current_<br>_max. surge forward current_<br>sine 180°<br>TC= 80°C<br>rectangular; d =1/3; bridge<br>TC= 80°C<br>t = 10 ms; sine 50 Hz<br>TC= 25°C<br>31<br>89<br>320|||A<br>A<br>A| |**Ptot**<br>_total power dissipation_<br>TC= 25°C<br>80|||W| |**Symbol**<br>**Conditions**<br>**Characteristic Values**|||| |**min.**|**typ.**|**max.**|| |**VF**<br>_forward voltage_<br>IF= 30 A<br>TVJ= 25°C<br>TVJ= 125°C|1.0<br>1.1|1.35|V<br>V| |**IR**<br>_reverse current_<br>VR= VRRM<br>TVJ= 25°C<br> <br>TVJ= 125°C|0.4|0.02|mA<br>mA| |**RthJC**<br>_thermal resistance junction to case_<br>(per diode)<br>TVJ= 25°C||1.4|K/W| |**RthCH**<br>_thermal resistance case to heatsink_<br>(per diode)|0.45||K/W| ## **Temperature Sensor NTC** |**Temperature Sensor NTC**|**Temperature Sensor NTC**|**Temperature Sensor NTC**|**Temperature Sensor NTC**| |---|---|---|---| |**Ratings**|||| |**Symbol**<br>**Defnitions**<br>**Conditions**<br>**min.**|**typ.**|**max.**|**Unit**| |**R25**<br>**B25/85**<br>_resistance_<br>TC= 25°C<br>4.45|4.7<br>3510|5.0|kW<br>K| ||||| |**Module**|||| |**Ratings**|||| |**Symbol**<br>**Defnitions**<br>**Conditions**<br>**min.**|**typ.**|**max.**|**Unit**| |**TVJ**<br>**TVJM**<br>**Tstg**<br>_operating temperature_<br>_max. virtual junction temperature_<br>_storage temperature_<br>-40<br>-40||125<br>150<br>125|°C<br>°C<br>°C| |**VISOL**<br>_isolation voltage_<br>IISOL<1 mA; 50/60 Hz||2500|V~| |**Md**<br>_mounting torque_<br>(M4)<br>2.0||2.2|Nm| |**dS**<br>**dA**<br>_creep distance on surface_<br>_strike distance through air_<br>12.7<br>12.7|||mm<br>mm| |**Weight**|40||g| ## **Equivalent Circuits for Simulation** |**Equivalent Circuits for Simulation**|**Equivalent Circuits for Simulation**|**Equivalent Circuits for Simulation**|**Equivalent Circuits for Simulation**| |---|---|---|---| |I<br>R|||| |**Ratings**<br>V0<br>0|||| |**Symbol**<br>**Defnitions**<br>**Conditions**<br>**min.**|**typ.**|**max.**|**Unit**| |**V0**<br>**R0**<br>_rectifer diode_<br>D8 - D13<br>TVJ= 125°C|0.90<br>9||V<br>mW| |**V0**<br>**R0**<br>_IGBT_<br>T1 - T6<br>TVJ= 125°C|1.50<br>120||V<br>mW| |**V0**<br>**R0**<br>_free wheeling diode_<br>D1 - D6<br>TVJ= 125°C|1.46<br>31||V<br>mW| |**V0**<br>**R0**<br>_IGBT_<br>T7<br>TVJ= 125°C|1.50<br>120||V<br>mW| |**V0**<br>**R0**<br>_free wheeling diode_<br>D7<br>TVJ= 125°C|1.46<br>63||V<br>mW| TC = 25°C unless otherwise stated IXYS reserves the right to change limits, test conditions and dimensions. 20071113a © 2007 IXYS All rights reserved 4 - 9 **MUBW15-12A6K** **==> picture [511 x 16] intentionally omitted <==** **----- Start of picture text -----**<br> Outline Drawing Dimensions in mm (1 mm = 0.0394“)<br>**----- End of picture text -----**<br> **==> picture [37 x 49] intentionally omitted <==** **==> picture [230 x 119] intentionally omitted <==** ## **Product Marking** |**Ordering**|**Part Name**|**Marking on Produc**|**t**<br>**Delivering Mode**|<br>**Base Qty **| |---|---|---|---|---| |Standard|MUBW 15-12A6K|MUBW15-12A6K|Box|10| IXYS reserves the right to change limits, test conditions and dimensions. 20071113a © 2007 IXYS All rights reserved 5 - 9 **MUBW15-12A6K** **==> picture [509 x 657] intentionally omitted <==** **----- Start of picture text -----**<br> 80 200 10 [3]<br>A TVJ = 125°C A A2s<br>TVJ = 25°C TVJ= 45°C<br>60 150<br>IF IFSM I2t<br>TVJ= 45°C<br>40 100<br>TVJ= 150°C TVJ= 150°C<br>20 50<br>50Hz, 80% VRRM<br>0 0 10 [2]<br>0.0 0.6 1.2 1.8 V 2.4 0.001 0.01 0.1 s 1 1 2 3 4 5 6 7ms8 910<br>VF t t<br>Fig. 1 Forward current versus Fig. 2 Surge overload current Fig. 3 I2t versus time per diode<br>voltage drop per diode<br>160 100<br>W RthA: A<br>0.2 K/W<br>0.5 K/W<br>80<br>120 0.8 K/W ID(AV)<br>1.5 K/W<br>Ptot 3 K/W<br>5 K/W 60<br>8 K/W<br>80<br>40<br>40<br>20<br>0 0<br>0 20 40 60 80 A 0 20 40 60 80 100 120 140 °C 0 20 40 60 80 100 120 140 °C<br>ID(AV)M Tamb TC<br>Fig. 4 Power dissipation versus direct output current Fig. 5 Max. forward current<br>and ambient temperature, sin 180° vs. case temperature<br>1.6<br>K/W<br>1.2<br>ZthJC<br>0.8<br>0.4<br>0.0 MUBW15-12A6K<br>0.001 0.01 0.1 1 s 10<br>t<br>Fig. 6 Transient thermal impedance junction to case<br>**----- End of picture text -----**<br> IXYS reserves the right to change limits, test conditions and dimensions. © 2007 IXYS All rights reserved 20071113a 6 - 9 **MUBW15-12A6K** **==> picture [206 x 167] intentionally omitted <==** **----- Start of picture text -----**<br> 30<br>VGE = 17 V 15 V 13 V<br>25A<br>IC<br>20<br>TVJ = 25°C<br>15<br>11 V<br>10<br>5 9 V<br>0<br>0 1 2 3 4 5 6 V 7<br>VCE<br>**----- End of picture text -----**<br> Fig. 7 Typ. output characteristics **==> picture [209 x 168] intentionally omitted <==** **----- Start of picture text -----**<br> 30<br>25A<br>IC 20<br>15<br>10<br>TVJ = 125°C TVJ = 25°C<br>5<br>VCE = 20V<br>0<br>4 6 8 10 12 14 V 16<br>VGE<br>**----- End of picture text -----**<br> Fig. 9 Typ. transfer characteristics **==> picture [210 x 183] intentionally omitted <==** **----- Start of picture text -----**<br> 20<br>V<br>15<br>VGE<br>10<br>5<br>VCE = 600V<br>IC = 10A<br>0<br>0 10 20 30 40 nC50 60<br>QG<br>Fig. 11 Typ. turn on gate charge<br>**----- End of picture text -----**<br> **==> picture [209 x 167] intentionally omitted <==** **----- Start of picture text -----**<br> 30<br>VGE = 17 V 15 V<br>25A<br>IC 13 V<br>20<br>TVJ = 125°C<br>15<br>11 V<br>10<br>5<br>9 V<br>0<br>0 1 2 3 4 5 6 V 7<br>VCE<br>**----- End of picture text -----**<br> Fig. 8 Typ. output characteristics **==> picture [203 x 167] intentionally omitted <==** **----- Start of picture text -----**<br> 50<br>A<br>40<br>IF<br>30<br>TVJ = 125°C<br>20<br>TVJ = 25°C<br>10<br>0<br>0 1 2 3 V 4<br>VF<br>**----- End of picture text -----**<br> Fig. 10 Typ. forward characteristics of free wheeling diode **==> picture [234 x 195] intentionally omitted <==** **----- Start of picture text -----**<br> 50 200<br>trr<br>40A 160ns<br>IRM trr<br>30 120<br>20 80<br>TVJ = 125°C<br>10 VR = 600 V 40<br>IF = 15 A<br>IRM<br>0 MUBW1012A7 0<br>0 200 400 600 800A/ � s 1000<br>-di/dt<br>Fig. 12 Typ. turn off characteristics<br>of free wheeling diode<br>**----- End of picture text -----**<br> IXYS reserves the right to change limits, test conditions and dimensions. 20071113a © 2007 IXYS All rights reserved 7 - 9 **MUBW15-12A6K** **==> picture [234 x 167] intentionally omitted <==** **----- Start of picture text -----**<br> 4 80<br>VCE = 600V<br>mJ V GE = ±15V ns<br>3 RG = 82 � 60<br>Eon TVJ = 125°C t<br>t<br>d(on)<br>2 40<br>tr<br>1 20<br>Eon<br>0 0<br>0 5 10 15 20 A<br>IC<br>**----- End of picture text -----**<br> Fig. 13 Typ. turn on energy and switching times versus collector current **==> picture [234 x 168] intentionally omitted <==** **----- Start of picture text -----**<br> 2.0 100<br>VCE = 600V Eon<br>mJ V GE = ±15V ns<br>Eon 1.5 IT C VJ = 10A = 125°C td(on) 75 t<br>tr<br>1.0 50<br>0.5 25<br>0.0 0<br>0 20 40 60 80 100 120 � 140<br>RG<br>**----- End of picture text -----**<br> Fig. 15 Typ. turn on energy and switching times versus gate resistor **==> picture [224 x 193] intentionally omitted <==** **----- Start of picture text -----**<br> 30<br>A<br>25<br>ICM 20<br>15<br>10<br>5 RG = 82 �<br>TVJ = 125°C<br>0<br>0 200 400 600 800 1000 1200 1400 V<br>VCE<br>Fig. 17 Reverse biased safe operating area<br>RBSOA<br>**----- End of picture text -----**<br> **==> picture [230 x 168] intentionally omitted <==** **----- Start of picture text -----**<br> 4 400<br>mJ<br>ns<br>3 300<br>Eoff VCE = 600V td(off) t<br>2 V RGE G = 82 = ±15V � Eoff 200<br>TVJ = 125°C<br>1 100<br>tf<br>0 0<br>0 5 10 15 20 A<br>IC<br>**----- End of picture text -----**<br> Fig. 14 Typ. turn off energy and switching times versus collector current **==> picture [234 x 169] intentionally omitted <==** **----- Start of picture text -----**<br> 1.2 600<br>Eoff<br>mJ ns<br>Eoff t<br>d(off) t<br>0.8 400<br>VCE = 600V<br>VGE = ±15V<br>IC = 10A<br>TVJ = 125°C<br>0.4 200<br>tf<br>0.0 0<br>0 20 40 60 80 100 120 � 140<br>RG<br>**----- End of picture text -----**<br> Fig.16 Typ. turn off energy and switching times versus gate resistor **==> picture [212 x 165] intentionally omitted <==** **----- Start of picture text -----**<br> 10<br>K/W<br>diode<br>ZthJC<br>1 IGBT<br>0.1<br>single pulse<br>0.01 MUBW 15-12A6K<br>0.001 0.01 0.1 1 s 10<br>t<br>**----- End of picture text -----**<br> Fig. 18 Typ. transient thermal impedance IXYS reserves the right to change limits, test conditions and dimensions. © 2007 IXYS All rights reserved 20071113a 8 - 9 **MUBW15-12A6K** **==> picture [209 x 167] intentionally omitted <==** **----- Start of picture text -----**<br> A<br>VGE = 15V<br>25<br>IC 20<br>15 TVJ = 25°C<br>TVJ = 125°C<br>10<br>5<br>0<br>0 1 2 3 4 5 V 6<br>VCE<br>**----- End of picture text -----**<br> Fig. 19 Typ. output characteristics **==> picture [236 x 169] intentionally omitted <==** **----- Start of picture text -----**<br> 4 400<br>mJ ns<br>Eoff 3 300<br>t t<br>d(off)<br>VCE = 600V<br>2 V GE = ±15V 200<br>R G = 82 �<br>TVJ = 125°C<br>1 100<br>tf<br>0 Eoff 0<br>0 5 10 15 20 A<br>IC<br>**----- End of picture text -----**<br> Fig. 21 Typ. turn off energy and switching times versus collector current **==> picture [214 x 166] intentionally omitted <==** **----- Start of picture text -----**<br> 10<br>K/W<br>diode<br>ZthJC<br>1 IGBT<br>0.1<br>single pulse<br>0.01<br>0.001 0.01 0.1 1 s 10<br>t<br>**----- End of picture text -----**<br> Fig. 23 Typ. transient thermal impedance **==> picture [205 x 168] intentionally omitted <==** **----- Start of picture text -----**<br> 30<br>A<br>25<br>IF TVJ = 125°C<br>20<br>15<br>10<br>TVJ = 25°C<br>5<br>0<br>0 1 2 3 V 4<br>VF<br>**----- End of picture text -----**<br> Fig. 20 Typ. forward characteristics of free wheeling diode **==> picture [233 x 170] intentionally omitted <==** **----- Start of picture text -----**<br> 1.2 600<br>Eoff<br>mJ ns<br>Eoff t t<br>d(off)<br>0.8 400<br>VCE = 600V<br>VGE = ±15V<br>IC = 20A<br>TVJ = 125°C<br>0.4 200<br>tf<br>0.0 0<br>0 20 40 60 80 100 120 �<br>RG<br>**----- End of picture text -----**<br> Fig. 22 Typ. turn off energy and switching times versus gate resistor **==> picture [219 x 140] intentionally omitted <==** **----- Start of picture text -----**<br> 10000<br>�<br>R<br>1000<br>100 MUBW15-12A6K<br>0 25 50 75 100 125 C 150<br>T<br>**----- End of picture text -----**<br> Fig. 24 Typ. thermistor resistance versus temperature IXYS reserves the right to change limits, test conditions and dimensions. 20071113a © 2007 IXYS All rights reserved 9 - 9
Updated at March 17, 2026
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Novapart is a B2B electronic component broker specialising in stock shortages and cost reduction. We source hard-to-find parts and identify compliant alternatives across a catalogue of 410,000+ components from 500+ manufacturers.
Learn more →Stock Shortage Specialist
When a component is unavailable, discontinued or has an unacceptable lead time, we tap into our network of vetted European and Asian distributors to source what you need — without compromising on quality or traceability.
Request a quote →Compliant Alternatives
We identify pin-to-pin, electrically equivalent substitutes that meet the same certifications (RoHS, AEC-Q100, REACH) as your original specification — validated against datasheets, not just part numbers. Often at a lower cost.
BOM Analysis service →