MTSD128AKC7MS-1WT

Micron Confidential and Proprietary 

**i300 microSDXC Card Features** 

## **i300 microSDXC Card** 

## **MTSD128AKC7MS-1WT, MTSD256AKC7MS-1WT, MTSD512AKC7MS-1WT, MTSD1T0AKC7MS-1WT** 

## **Features** 

- Micron[®] 3D QLC NAND Flash 

- Form factor: 8-pad microSD memory card (11mm × 15mm) 

- Density[1] : 128GB, 256GB, 512GB, 1TB 

- SD Physical Layer Specification version 6.10 compliant[2] 

- microSD Card Specification version 4.20[3] 

- SD memory card file system specification 

- Password protection of cards 

- Supports secure digital interface (SD) and serial peripheral interface (SPI) 

- Mean time to failure (MTTF): 2 million hours 

- Endurance: Total bytes written (TBW) 

- 128GB: up to 120TB 

- 256GB: up to 240TB 

- 512GB: up to 480TB 

- 1TB: up to 960TB 

- Surveillance recording capability 

- 128GB: 24/7 recording @ 8Mb/s for 3 years 

- 256GB: 24/7 recording @16 Mb/s for 3 years 

   - Integrated power-on reset, oscillator, voltage regulation, and voltage detection circuits 

   - Built-in features for defect and error management 

   - LDPC error correction code implemented 

   - Global wear leveling 

   - Bad block management 

   - Refresh mechanism for UECC prevention 

   - Sudden power-off (SPO) protection 

   - Operating voltage: 2.7–3.6V 

   - Temperature 

   - Operating: –25°C to +85°C 

   - Storage: –40°C to +85°C 

   - Standards compliance 

   - RoHS 

   - FCC 

   - CE 

   - BSMI 

   - KC RRA 

   - W.E.E.E. 

   - VCCI 

   - IC 

   - Halogen-free 

- 512GB: 24/7 recording @32 Mb/s for 3 years 

- 1TB: 24/7 recording @64 Mb/s for 3 years 

- Health monitoring: Available[4] 

- Performance 

- Refer to Performance and Capacity (page 6) for read and write speed 

- Bus speed mode (theoretical transfer rate @x4 bits) – Default: 3.3V signaling up to 12.5 MB/s @25 MHz 

- High-speed: 3.3V signaling up to 25 MB/s @50 MHz 

   - Notes: 1. Actual usable capacity may vary. 1GB = 1 billion bytes. 1TB = 1 trillion bytes. 

      2. SD Specifications, Part 1, Physical Layer Specification, version 6.10. 

      3. SD Specifications, Part 1, microSD Card Specification, version 4.20. 

      4. Contact Micron factory for details. 

      5. SD Specifications, Part 1, Low Voltage Interface Addendum, version 1.00. 

- SDR12: UHS-I 1.8V signaling up to 12.5 MB/s @25 MHz 

- SDR25: UHS-I 1.8V signaling up to 25 MB/s @50 MHz 

- SDR50: UHS-I 1.8V signaling up to 50 MB/s @100 MHz 

- SDR104: UHS-I 1.8V signaling up to 104 MB/s @208 MHz 

- DDR50: UHS-I 1.8V signaling up to 50 MB/s @50 MHz (sampled on both clock edges) 

- 1.8V low voltage signaling (LVS) interface support[5] – LV50: LV cards supporting UHS50 

- – LV104: LV cards supporting UHS104 

Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2019 Micron Technology, Inc. All rights reserved. 

CCM005-816717818-10530 i300_microSD_Card_128GB-1TB.pdf - Rev. C 05/2020 EN 

1 Products and specifications discussed herein are subject to change by Micron without notice. 

Micron Confidential and Proprietary 

**i300 microSDXC Card Features** 

## **Part Number Ordering Information** 

Micron microSD memory cards are available in different configurations and densities. Verify valid part numbers by using Micron’s part catalog search at www.micron.com. To compare features and specifications by device type, visit www.micron.com/products. Contact the factory for cards not found. 

## **Figure 1: Marketing Part Number Chart** 

MT SD 128AK C7 MS -1 WT ES Micron Technology Production Status Blank = Production Product Family ES = Engineering samples SD = Secure digital Custom Designator Density Blank = Standard 128 = 128GB CS = C series 256 = 256GB 512 = 512GB Operating Temperature Range 1T0 = 1TB WT = –25°C to +85°C IT = –40°C to +85°C NAND Component AK = QLC 1Tb, x8, 3.3V (3D) Special Features 1 = First genaration Controller Revision C7 = Revision C7 Packaging RG = Full size SD MS = microSD 

Note: 1. Not all combinations are necessarily available. For a list of available devices or for further information on any aspect of these products, please contact your nearest Micron sales office. **Table 1: Ordering Information Part Number Capacity** MTSD128AKC7MS-1WT 128GB MTSD256AKC7MS-1WT 256GB MTSD512AKC7MS-1WT 512GB MTSD1T0AKC7MS-1WT 1TB ~~—~~ 

Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2019 Micron Technology, Inc. All rights reserved. 

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**i300 microSDXC Card Important Notes and Warnings** 

## **Important Notes and Warnings** 

Micron Technology, Inc. ("Micron") reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions. This document supersedes and replaces all information supplied prior to the publication hereof. You may not rely on any information set forth in this document if you obtain the product described herein from any unauthorized distributor or other source not authorized by Micron. 

**Automotive Applications.** Products are not designed or intended for use in automotive applications unless specifically designated by Micron as automotive-grade by their respective data sheets. Distributor and customer/distributor shall assume the sole risk and liability for and shall indemnify and hold Micron harmless against all claims, costs, damages, and expenses and reasonable attorneys' fees arising out of, directly or indirectly, any claim of product liability, personal injury, death, or property damage resulting directly or indirectly from any use of nonautomotive-grade products in automotive applications. Customer/distributor shall ensure that the terms and conditions of sale between customer/distributor and any customer of distributor/customer (1) state that Micron products are not designed or intended for use in automotive applications unless specifically designated by Micron as automotive-grade by their respective data sheets and (2) require such customer of distributor/customer to indemnify and hold Micron harmless against all claims, costs, damages, and expenses and reasonable attorneys' fees arising out of, directly or indirectly, any claim of product liability, personal injury, death, or property damage resulting from any use of non-automotive-grade products in automotive applications. 

**Critical Applications.** Products are not authorized for use in applications in which failure of the Micron component could result, directly or indirectly in death, personal injury, or severe property or environmental damage ("Critical Applications"). Customer must protect against death, personal injury, and severe property and environmental damage by incorporating safety design measures into customer's applications to ensure that failure of the Micron component will not result in such harms. Should customer or distributor purchase, use, or sell any Micron component for any critical application, customer and distributor shall indemnify and hold harmless Micron and its subsidiaries, subcontractors, and affiliates and the directors, officers, and employees of each against all claims, costs, damages, and expenses and reasonable attorneys' fees arising out of, directly or indirectly, any claim of product liability, personal injury, or death arising in any way out of such critical application, whether or not Micron or its subsidiaries, subcontractors, or affiliates were negligent in the design, manufacture, or warning of the Micron product. 

**Customer Responsibility.** Customers are responsible for the design, manufacture, and operation of their systems, applications, and products using Micron products. ALL SEMICONDUCTOR PRODUCTS HAVE INHERENT FAILURE RATES AND LIMITED USEFUL LIVES. IT IS THE CUSTOMER'S SOLE RESPONSIBILITY TO DETERMINE WHETHER THE MICRON PRODUCT IS SUITABLE AND FIT FOR THE CUSTOMER'S SYSTEM, APPLICATION, OR PRODUCT. Customers must ensure that adequate design, manufacturing, and operating safeguards are included in customer's applications and products to eliminate the risk that personal injury, death, or severe property or environmental damages will result from failure of any semiconductor component. 

**Limited Warranty.** In no event shall Micron be liable for any indirect, incidental, punitive, special or consequential damages (including without limitation lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort, warranty, breach of contract or other legal theory, unless explicitly stated in a written agreement executed by Micron's duly authorized representative. 

Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2019 Micron Technology, Inc. All rights reserved. 

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**i300 microSDXC Card General Description** 

## **General Description** 

The microSD card is an advanced Micron[®] 3D NAND Flash memory technology based removable storage device specifically designed to meet the performance, capacity, and quality required for industrial devices or systems. In addition to mass storage-specific Flash memory, the microSD card includes an on-board intelligent controller which manages interface protocols, security algorithms for content protection, data storage and retrieval, as well as error correction code (ECC) algorithms, defect handling, sudden power-off safeguard and wear leveling. 

The microSD card includes one or more NAND Flash memory components and a microSD card controller. The density of a card depends on the number of die within the package and the density of each die. 

**Figure 2: Functional Block Diagram** 

**==> picture [420 x 132] intentionally omitted <==**

**----- Start of picture text -----**<br>
Micron<br>CPU<br>NAND Flash<br>Media<br>SD protocol NAND Flash interface<br>manager<br>Lt<br>Micron<br>Data buffer NAND Flash<br>ee (optional)<br>**----- End of picture text -----**<br>


Note: 1. Not drawn to scale. 

Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2019 Micron Technology, Inc. All rights reserved. 

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**i300 microSDXC Card Pad Assignment and Descriptions** 

## **Pad Assignment and Descriptions** 

**Figure 3: microSD Card Pad Assignment (Bottom View)** 

|1<br>2<br>3<br>4<br>5<br>6<br>7<br>8<br>**Table 2: MicroSD Contact Pad Description**<br>TOLL|1<br>2<br>3<br>4<br>5<br>6<br>7<br>8<br>**Table 2: MicroSD Contact Pad Description**<br>TOLL|1<br>2<br>3<br>4<br>5<br>6<br>7<br>8<br>**Table 2: MicroSD Contact Pad Description**<br>TOLL|1<br>2<br>3<br>4<br>5<br>6<br>7<br>8<br>**Table 2: MicroSD Contact Pad Description**<br>TOLL|1<br>2<br>3<br>4<br>5<br>6<br>7<br>8<br>**Table 2: MicroSD Contact Pad Description**<br>TOLL|1<br>2<br>3<br>4<br>5<br>6<br>7<br>8<br>**Table 2: MicroSD Contact Pad Description**<br>TOLL|1<br>2<br>3<br>4<br>5<br>6<br>7<br>8<br>**Table 2: MicroSD Contact Pad Description**<br>TOLL|1<br>2<br>3<br>4<br>5<br>6<br>7<br>8<br>**Table 2: MicroSD Contact Pad Description**<br>TOLL|1<br>2<br>3<br>4<br>5<br>6<br>7<br>8<br>**Table 2: MicroSD Contact Pad Description**<br>TOLL|1<br>2<br>3<br>4<br>5<br>6<br>7<br>8<br>**Table 2: MicroSD Contact Pad Description**<br>TOLL|1<br>2<br>3<br>4<br>5<br>6<br>7<br>8<br>**Table 2: MicroSD Contact Pad Description**<br>TOLL|1<br>2<br>3<br>4<br>5<br>6<br>7<br>8<br>**Table 2: MicroSD Contact Pad Description**<br>TOLL|1<br>2<br>3<br>4<br>5<br>6<br>7<br>8<br>**Table 2: MicroSD Contact Pad Description**<br>TOLL|1<br>2<br>3<br>4<br>5<br>6<br>7<br>8<br>**Table 2: MicroSD Contact Pad Description**<br>TOLL|1<br>2<br>3<br>4<br>5<br>6<br>7<br>8<br>**Table 2: MicroSD Contact Pad Description**<br>TOLL|1<br>2<br>3<br>4<br>5<br>6<br>7<br>8<br>**Table 2: MicroSD Contact Pad Description**<br>TOLL|||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|**Pad**|||**SD Mode**|||||||||||||||**SPI Mode**||
|**Number**|**Symbol**|**Type1**||**Description**||||||||||||**Symbol**|**Type1**||**Description**|
|1|DAT22|I/O/PP||Data line [Bit 2]||||||||||||RSV|–||Reserved|
|2|CD/DAT32|I/O/PP3||Card detect/data line [Bit 3]|||||||Card detect/data line [Bit 3]|||||CS|I3||Chip select (active low)|
|3|CMD|PP||Command/response||||||||||||DI|I||Data in|
|4|VDD|S||Supply voltage||||||||||||VDD|S||Supply voltage|
|5|CLK|I||Clock||||||||||||SCLK|I||Clock|
|6|VSS|S||Supply voltage ground||||||||||||VSS|S||Supply voltage ground|
|7|DAT0|I/O/PP||Data line [Bit 0]||||||||||||DO|O/PP||Data out|
|8|DAT12|I/O/PP||Data line [Bit 1]||||||||||||RSV|–||Reserved|



**Table 2: MicroSD Contact Pad Description** 

- Notes: 1. S: Power supply; I: Input; O: Output using push-pull drivers; PP: I/O using push-pull drivers. 

   2. The extended DAT lines (DAT1-DAT3) are input on power-up. They start to operate as DAT lines after SET_BUS_WIDTH (ACMD6) command. The host should keep its own DAT1-DAT3 lines in input mode, as well, while they are not used. 

   3. After power-up, pad 2 is configured as an input with an internal 50k Ω pull-up (for card detection and SPI mode selection). The pull-up should be disconnected prior to regular data transfer by issuing the SET_CLR_CARD_DETECT (ACMD42) command. 

Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2019 Micron Technology, Inc. All rights reserved. 

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**i300 microSDXC Card Performance and Capacity** 

## **Performance and Capacity** 

## **Performance** 

Using a striping method across multiple NAND Flash devices the card read and write performance is optimized. 

The Industrial microSD cards also use performance features of the underlying NAND Flash to increase speed in streaming applications. By sending larger packets of sequential data, the Industrial microSD card can better utilize NAND Flash features to enhance performance. 

**Table 3: Measured Performance (25°C, VDD = 3.3V)** 

|**Density1**|**Sequential Read2**|**Sequential Write2**|
|---|---|---|
|128GB|100 MB/s|20 MB/s|
|256GB|100 MB/s|35 MB/s|
|512GB|100 MB/s|39 MB/s|
|1TB|100 MB/s|39 MB/s|



- Notes: 1. 1GB = 1 billion bytes. 1TB = 1 trillion bytes. 

   2. Measurements are based on a 100MB file size in UHS-I mode and depend on the host configuration used to run the test. 

## **Capacity** 

When quoting device capacity, Micron uses the formatted capacity, not the raw number of bytes available. 

**Table 4: Bytes Available After Factory Formatting (exFAT for SDXC card)** 

|**Density1**|**Usable Bytes2**|**Speed Class3**|**Application Performance**<br>**Class3, 4**|
|---|---|---|---|
|128GB|124,980,822,016|Class10, U1|Class2 (A2)|
|256GB|249,961,644,032|Class10, U3|Class2 (A2)|
|512GB|503,010,295,808|Class10, U3|Class2 (A2)|
|1TB|1,000,018,542,592|Class10, U3|Class2 (A2)|



- Notes: 1. 1GB = 1 billion bytes. 1TB = 1 trillion bytes. 

   2. Actual user usable capacity. When cloning disk partitions, the master disk should always be formatted to no more than the minimum guaranteed usable bytes available for that card capacity. 

   3. Class is determined by Testmetrix VTE4100 Compliance Test. 

   4. Enable users to run their smartphone apps from the installed memory card. 

Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2019 Micron Technology, Inc. All rights reserved. 

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**i300 microSDXC Card OCR Register** 

## **OCR Register** 

The 32-bit operation conditions register defines the supported operating voltage ranges for the power supply and supported access modes of the microSD card. Additionally, this register includes status information bits. 

## **Table 5: OCR Field Parameters** 

|**OCR-Slice**|**OCR Value**|**Description**|
|---|---|---|
|[31]|1b (ready)/0b (busy)|Card power-up status bit (busy)1|
|[30]|1b|Card Capacity Status (CCS)2|
|[29]|0b|Card doesn't support UHS-II interface|
|[28:25]|0000b|Reserved|
|[24]|1b (switching)/0b (maintained)|Switching to 1.8V Accepted (S18A)|
|[23:15]|1 1111 1111b|VDD: 2.7–3.6V range|
|[14:0]|000 0000 0000 0000b|Reserved|



Notes: 1. This bit is set to LOW if the card has not finished the power-up routine. 2. This bit is valid only when the card power-up status bit is set. 

Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2019 Micron Technology, Inc. All rights reserved. 

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**i300 microSDXC Card CID Register** 

## **CID Register** 

The card identification (CID) register is 128 bits wide. It contains the device identification information used during the card identification phase as required by SD protocol. Each card is created with a unique identification number. 

**Table 6: CID Register Field Parameters** 

|**Name**<br>~~a~~|**Field**<br>~~a~~|**Width**<br>~~a~~<br>~~a~~|**CID-Slice**<br>~~a~~<br>~~a~~|**CID Value**<br>~~a~~<br>~~a~~|
|---|---|---|---|---|
|Manufacturer ID<br>~~a~~|MID<br>~~a~~|8<br>~~a~~|[127:120]<br>~~a~~|09h<br>~~a~~|
|OEM/Application ID<br>~~a~~|OID<br>~~a~~|16<br>~~a~~|[119:104]<br>~~a~~|41 50h<br>~~a~~|
|Product name|PNM|40|[103:64]|128GB: MB58B<br>256GB: MB68B<br>512GB: MB78B<br>1TB: MB98B|
|Product revision<br>~~a~~|PRV<br>~~a~~|8<br>~~a~~|[63:56]<br>~~a~~|06h<br>~~a~~|
|Product serial number<br>~~a~~|PSN<br>~~a~~|32<br>~~a~~|[55:24]<br>~~a~~|–<br>~~a~~|
|Reserved<br>~~>~~|–<br>~~>~~|4<br>~~>~~|[23:20]<br>~~>~~|–<br>~~>~~|
|Manufacturing date<br>~~a~~|MDT<br>~~a~~|12<br>~~a~~|[19:8]<br>~~a~~|–<br>~~a~~|
|CRC7 checksum<br>~~a~~|CRC<br>~~a~~|7<br>~~a~~|[7:1]<br>~~a~~|–<br>~~a~~|
|Not used, always 1<br>~~a~~|–<br>~~a~~|1<br>~~a~~|[0]<br>~~a~~|1<br>~~a~~|



Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2019 Micron Technology, Inc. All rights reserved. 

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**i300 microSDXC Card CSD Register** 

## **CSD Register** 

The card-specific data (CSD) register provides information about accessing the card contents. The CSD register defines the data format, error correction type, maximum data access time, as well as whether the DSR register can be used, and so forth. The programmable part of the register (entries marked with W in the following table) can be changed by the PROGRAM_CSD (CMD27) command. The types of the entries in the table below are coded as follows: R = readable, W(1) = writable once, W = multiple writable. 

**Table 7: CSD Register Field Parameters** 

|**Name**<br>~~ee~~|**Field**<br>~~ee~~|**Width**<br>~~ee~~|**Cell Type**<br>~~ee~~|**CSD-Slice**<br>~~ee~~|**CSD Value1**<br>~~ee~~|
|---|---|---|---|---|---|
|CSD structure<br>~~ee~~|CSD_STRUCTURE<br>~~ee~~|2<br>~~ee~~|R<br>~~ee~~|[127:126]<br>~~ee~~|01b<br>~~ee~~|
|Reserved<br>~~or~~|–<br>~~or~~|6<br>~~or~~|R<br>~~or~~|[125:120]<br>~~or~~|00 0000b<br>~~or~~|
|Data read access time<br>~~or~~|TAAC<br>~~or~~<br>ee|8<br>~~or~~|R<br>~~or~~|[119:112]<br>~~or~~|0Eh<br>~~or~~|
|Data read access time in CLK cy-<br>cles (NSAC × 100)<br>~~ee~~|NSAC<br>~~ee~~<br>ee|8<br>~~ee~~|R<br>~~ee~~|[111:104]<br>~~ee~~|00h<br>~~ee~~|
|Maximum data transfer rate<br>~~rr~~|TRAN_SPEED<br>ee<br>~~rr~~|8<br>~~rr~~|R<br>~~rr~~|[103:96]<br>~~rr~~|-<br>~~rr~~|
|Card command classes<br>~~rr~~<br>a|CCC<br>~~rr~~<br>~~e~~|12<br>~~rr~~<br>~~e~~s|R<br>~~rr~~<br>ee|[95:84]<br>~~rr~~<br>ee|010110110101b<br>~~rr~~|
|Maximum read data block<br>length<br>a|READ_BL_LEN<br>~~e~~<br>rs|4<br>~~e~~s<br>rs|R<br>ee<br>Rs|[83:80]<br>ee|9|
|Partial blocks for read allowed<br>a<br>~~es~~|READ_BL_PARTIAL<br>~~e~~<br>~~es~~<br>rs|1<br>~~e~~s <br>~~es~~<br>rs|R<br> ee<br>~~es~~<br>Rs|[79:79]<br>ee<br>~~es~~|0<br>~~es~~|
|Write block misalignment<br>~~ee~~|WRITE_BLK_MISALIGN<br>rs<br>~~ee~~|1<br>rs <br>~~ee~~|R<br> Rs<br>~~ee~~|[78:78]<br>~~ee~~|0<br>~~ee~~|
|Read block misalignment<br>~~ee~~|READ_BLK_MISALIGN<br>~~ee~~|1<br>~~ee~~|R<br>~~ee~~|[77:77]<br>~~ee~~|0<br>~~ee~~|
|DSR implemented<br>~~ee~~|DSR_IMP<br>~~ee~~|1<br>~~ee~~|R<br>~~ee~~|[76:76]<br>~~ee~~|0<br>~~ee~~|
|Reserved<br>~~ee~~<br>p~~L~~|–<br>~~ee~~<br>~~LtT~~|6<br>~~ee~~<br>~~tT~~|R<br>~~ee~~<br>~~tT~~|[75:70]<br>~~ee~~|00 0000b<br>~~ee~~|
|Device size<br>p~~L~~|C_SIZE<br>~~LtT~~|22<br>~~tT~~|R<br>~~tT~~|[69:48]|128GB - 0x03A36D<br>256GB - 0x0746DB<br>512GB - 0x0EA437<br>1TB - 0x1D1BB7|
|Reserved<br>p~~L~~|–<br>~~LtT~~<br>ny|1<br>~~tT~~<br>rs|R<br>~~tT~~<br>ts|[47:47]|0|
|Erase single block enable<br>p~~L~~<br>~~es~~|ERASE_BLK_EN<br>~~L~~ ~~tT~~<br>~~es~~<br>ny|1<br>~~tT~~<br>~~es~~<br>rs|R<br>~~tT~~<br>~~es~~<br>ts|[46:46]<br>~~es~~|1<br>~~es~~|
|Erase sector size<br>~~ee~~|SECTOR_SIZE<br>ny <br>~~ee~~|7<br> rs <br>~~ee~~|R<br> ts<br>~~ee~~|[45:39]<br>~~ee~~|7Fh<br>~~ee~~|
|Write protect group size<br>~~ee~~|WP_GRP_SIZE<br>~~ee~~|7<br>~~ee~~|R<br>~~ee~~|[38:32]<br>~~ee~~|000 0000b<br>~~ee~~|
|Write protect group enable<br>~~ee~~|WP_GRP_ENABLE<br>~~ee~~|1<br>~~ee~~|R<br>~~ee~~|[31:31]<br>~~ee~~|0<br>~~ee~~|
|Reserved<br>~~ee~~|–<br>~~ee~~|2<br>~~ee~~|R<br>~~ee~~|[30:29]<br>~~ee~~|00b<br>~~ee~~|
|Write speed factor<br>~~ee~~<br>a|R2W_FACTOR<br>~~ee~~<br>~~e~~|3<br>~~ee~~<br>~~e~~s|R<br>~~ee~~<br>ee|[28:26]<br>~~ee~~<br>ee|010b<br>~~ee~~|
|Maximum write data block<br>length<br>a|WRITE_BL_LEN<br>~~e~~|4<br>~~e~~s|R<br>ee|[25:22]<br>ee|9|
|Partial blocks for write allowed<br>a<br>~~——~~|WRITE_BL_PARTIAL<br>~~e~~<br>~~——~~|1<br>~~e~~s <br>~~——~~|R<br> ee<br>~~——~~|[21:21]<br>ee<br>~~——~~|0<br>~~——~~|
|Reserved<br>~~——~~|–<br>~~——~~|5<br>~~——~~|R<br>~~——~~|[20:16]<br>~~——~~|0 0000b<br>~~——~~|
|File format group<br>~~or~~|FILE_FORMAT_GRP<br>~~or~~|1<br>~~or~~|R<br>~~or~~|[15:15]<br>~~or~~|0<br>~~or~~|
|Copy flag<br>~~or~~|COPY<br>~~or~~<br>ts|1<br>~~or~~<br>Ps|R/W(1)<br>~~or~~<br>Uns|[14:14]<br>~~or~~|0<br>~~or~~|
|Permanent write protection<br>~~es~~|PERM_WRITE_PROTECT<br>~~es~~<br>ts|1<br>~~es~~<br>Ps|R/W(1)<br>~~es~~<br>Uns|[13:13]<br>~~es~~|0<br>~~es~~|



Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2019 Micron Technology, Inc. All rights reserved. 

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**i300 microSDXC Card CSD Register** 

**Table 7: CSD Register Field Parameters (Continued)** 

|**Name**|**Field**|**Width**|**Cell Type**|**CSD-Slice**|**CSD Value1**|
|---|---|---|---|---|---|
|Temporary write protection|TMP_WRITE_PROTECT|1|R/W|[12:12]|0|
|File format|FILE_FORMAT|2|R|[11:10]|0|
|Reserved|–|2|R|[9:8]|00b|
|CRC|CRC|7|R/W|[7:1]|xxxxxxxb|
|Not used, always 1|–|1|–|[0:0]|1|



Note: 1. All register table values reflect their expected state after card initialization and prior to host issuing CMD6. 

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**i300 microSDXC Card SCR Register** 

## **SCR Register** 

In addition to the CSD register, there is another configuration register named SD card configuration register (SCR). SCR provides information on the SD Memory Card's special features that were configured into the given card. The size of SCR register is 64 bits. The types of all bits of SCR are R = readable. 

**Table 8: CSD Register Field Parameters** 

|**Description**<br>~~SS~~|**Field**<br>~~ee~~|**Width**<br>~~ee~~|**Cell**<br>**Type**<br>~~ee~~|**CSD-Slice**<br>~~ee~~|**CSD Value**<br>~~ee~~|
|---|---|---|---|---|---|
|SCR structure<br>~~SS~~|SCR_STRUCTURE<br>~~ee~~|4<br>~~ee~~<br>~~ee~~|R<br>~~ee~~<br>~~ee~~|[63:60]<br>~~ee~~<br>~~ee~~|0000b<br>~~ee~~<br>e~~e~~|
|SD memory card – Specification<br>version<br>~~SS ~~<br>~~ee~~|SD_SPEC<br> ~~ee~~<br>~~ee~~|4<br>~~ee~~<br>~~ee~~<br>~~ee~~|R<br>~~ee~~<br>~~ee~~<br>~~ee~~|[59:56]<br>~~ee~~<br>~~ee~~<br>~~ee~~|0010b<br>~~ee~~<br>~~ee~~<br>e~~e~~|
|Data status after erases<br>~~ee~~|DATA_STAT_AFTER_ERASE<br>~~ee~~|1<br>~~ee~~<br>~~ee~~|R<br>~~ee~~<br>~~ee~~|[55:55]<br>~~ee~~<br>~~ee~~|0<br>~~ee~~<br>e~~e~~|
|CPRM security support<br>~~ee~~|SD_SECURITY<br>~~ee~~|3<br>~~ee~~<br>~~ee~~|R<br>~~ee~~<br>~~ee~~|[54:52]<br>~~ee~~<br>~~ee~~|000b<br>e~~e~~<br>~~ee~~|
|DAT bus widths supported<br>~~ee~~|SD_BUS_WIDTHS<br>~~ee~~|4<br>~~ee~~|R<br>~~ee~~|[51:48]<br>~~ee~~|0101b<br>~~ee~~|
|Specification version 3.00 or later<br>~~ee~~|SD_SPEC3<br>~~ee~~|1<br>~~ee~~|R<br>~~ee~~|[47:47]<br>~~ee~~|1b<br>~~ee~~|
|Extended security support<br>~~ee~~|EX_SECURITY<br>~~ee~~|4<br>~~ee~~|R<br>~~ee~~|[46:43]<br>~~ee~~|0000b<br>~~ee~~|
|Specification version 4.00 or later<br>~~ee~~|SD_SPEC4<br>~~ee~~|1<br>~~ee~~|R<br>~~ee~~|[42:42]<br>~~ee~~|1b<br>~~ee~~|
|Specification version 5.00 or later<br>~~ee~~|SD_SPECX<br>~~ee~~|4<br>~~ee~~|R<br>~~ee~~|[41:38]<br>~~ee~~|0010b<br>~~ee~~|
|Reserved<br>~~ee~~|–<br>~~ee~~|2<br>~~ee~~|R<br>~~ee~~|[37:36]<br>~~ee~~|00b<br>~~ee~~|
|Command support bits<br>~~ee~~|CMD_SUPPORT<br>~~ee~~|4<br>~~ee~~|R<br>~~ee~~|[35:32]<br>~~ee~~|0111b<br>~~ee~~|
|Reserved for manufacturer usage<br>~~a~~|–<br>~~a~~|32<br>~~a~~|R<br>~~a~~|[31:0]<br>~~a~~|01 00 00 00h<br>~~a~~|



Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2019 Micron Technology, Inc. All rights reserved. 

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**i300 microSDXC Card Command Set** 

## **Command Set** 

The SD specification categorizes commands into classes. Table 9 shows commands supported by the microSD card. 

## **Table 9: Supported Commands** 

|**Command Type**|**Card**<br>**Command**<br>**Class (CCC)**|**Supported Commands**|
|---|---|---|
|Basic commands|Class 0|CMD0, CMD2, CMD3, CMD7, CMD8, CMD9, CMD10, CMD11,<br>CMD12, CMD13, CMD15|
|Command Queue function commands|Class 1|CMD43, CMD44, CMD45, CMD46, CMD47|
|Block-oriented READ commands|Class 2|CMD16, CMD17, CMD18, CMD19, CMD20, CMD23|
|Block-oriented WRITE commands|Class 4|CMD16, CMD20, CMD23, CMD24, CMD25, CMD27|
|ERASE commands|Class 5|CMD32, CMD33, CMD38|
|Lock card|Class 7|CMD16, CMD42|
|Application-specific commands1|Class 8|CMD55, CMD56, ACMD6, ACMD13, ACMD22, ACMD23, ACMD41,<br>ACMD42, ACMD51|
|SWITCH commands|Class 10|CMD6|
|Function extension commands|Class 11|CMD48, CMD49|



Note: 1. Each application-specific (ACMD) command is a 2-sequence command. First, a CMD55 is sent, followed by a CMDx, where x is the ACMDx value. 

Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2019 Micron Technology, Inc. All rights reserved. 

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**i300 microSDXC Card Electrical Specifications** 

## **Electrical Specifications** 

## **Absolute Ratings and Operating Conditions** 

Stresses greater than those listed in Table 10 may cause permanent damage to the device. This is a stress rating only, and functional operation of the device at these or any other conditions outside those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may adversely affect reliability. 

**Table 10: Absolute Maximum Ratings** 

|**Parameter/Condition**<br>**Min**<br>**Max**<br>**Unit**<br>VDDsupply voltage<br>2.7<br>3.6<br>V<br>Storage temperature<br>–40<br>+85<br>°C<br>~~—_—_—_—_——_——~~|
|---|
|**Table 11: Recommended Operating Conditions**<br>**Parameter/Condition**<br>**Symbol**<br>**Min**<br>**Typ**<br>**Max**<br>**Unit**<br>Operating temperature<br>TA<br>–25<br>–<br>+85<br>°C<br>Supply voltage<br>VDD<br>2.7<br>3.3<br>3.6<br>V<br>Regulator supply voltage for 1.8V signaling<br>VDDIO<br>1.7<br>1.8<br>1.95<br>V<br>Ground supply voltage<br>VSS<br>0<br>0<br>0<br>V<br>~~SSS~~|
|**DC Characteristics**|
|**Table 12: DC Voltage Characteristics for 3.3V Signaling**|



|**Parameter**<br>**Symbol**<br>**Min**<br>**Max**<br>**Unit**<br>**Comments**<br>Input low voltage<br>VIL<br>VSS- 0.30<br>0.25 × VDD<br>V<br>Input high voltage<br>VIH<br>0.625 × VDD<br>VDD+ 0.30<br>V<br>Output low voltage<br>VOL<br>–<br>0.125 × VDD<br>V<br>IOL= 2mA @ VDD(MIN)<br>Output high voltage<br>VOH<br>0.75 × VDD<br>–<br>V<br>IOH= –2mA @ VDD(MIN)<br>~~SSS~~|
|---|
|**Table 13: DC Voltage Characteristics for 1.8V Signaling**|
|**Parameter**<br>**Symbol**<br>**Min1**<br>**Max1**<br>**Unit**<br>**Comments**<br>Input low voltage<br>VIL<br>VSS- 0.30<br>0.58<br>V<br>Input high voltage<br>VIH<br>1.27<br>2.00<br>V<br>Output low voltage<br>VOL<br>–<br>0.45<br>V<br>IOL= 2mA<br>Output high voltage<br>VOH<br>1.40<br>–<br>V<br>IOH= –2mA<br>Note:<br>1. As signaling level is generated by regulator in host and card, some of the values are de-<br>fined by fixed value rather than based on VDD.<br>~~—— ==~~|



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## **i300 microSDXC Card Electrical Specifications** 

**Table 14: DC Current Characteristics** 

|**Parameter**|**Density**|**Symbol**|**Min**|**Max1**|**Unit**|
|---|---|---|---|---|---|
|Operating current (read)|128GB|ICC1|–|133|mA|
||258GB||–|133|mA|
||512GB||–|136|mA|
||1TB||–|143|mA|
|Operating current (write)|128GB|ICC2|–|127|mA|
||256GB||–|165|mA|
||512GB||–|174|mA|
||1TB||–|179|mA|



Note: 1. Peak current: RMS value in SDR104 mode with Testmetrix VTE4100. 

## **AC Characteristics** 

Timing specifications including clock timing, input and output timings for all bus modes are defined in SD Specifications. Refer to Section 6.6 and 6.7 of Part 1, Physical Layer Specification, version 5.10 for detail information. 

## **Electrostatic Discharge (ESD)** 

Contacts pads: 

- Human body model of ±4kV according to IEC61000-4-2. 

- Non contacts pad area: 

- Coupling plane discharge of ±8kV. 

- Air discharge of ±15kV. 

- Human body model according to IEC61000-4-2. 

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**i300 microSDXC Card Package Dimensions** 

## **Package Dimensions** 

Figure 4 provides the physical dimensions of Micron microSD card. For detail dimensions and tolerances, refer to SDA microSD Card Addendum, Section 3.0 Mechanical Specification for microSD Memory Card. 

## **Figure 4: microSD Card – 11mm × 15mm** 

**==> picture [479 x 279] intentionally omitted <==**

**----- Start of picture text -----**<br>
0.70 ±0.1<br>9.70 ±0.1<br>——— | i<br>‘ cit |<br>0.80 MIN<br>9.0 MAX<br>0.70 ±0.1 fe ]<br>0.90 MIN 11.0 ±0.1<br>1.0 ±0.1<br>ee 8.50 MAX ee<br>Note: 1. Dimensions are in millimeters.<br>15.0 ±0.1<br>**----- End of picture text -----**<br>


**Table 15: Package Specifications** 

**Parameter Descriptions** Surface Plain (except contact area) Edges Smooth edges Weight 0.25gm ~~———~~ 

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**i300 microSDXC Card Compliance** 

## **Compliance** 

Micron microSD card comply with the following: 

- Micron Green Standard 

- CE (Europe): EN 55032 Class B, RoHS 

- FCC: CFR Title 47, Part 15 Class B 

- BSMI (Taiwan): approval to CNS 13438 Class B and CNS 15663 

- KC RRA (Korea): approval to KN32 Class B, KN 35 Class B 

## R-R-MU2-MTSDXXXAKC7MS 

- W.E.E.E.: compliance with EU WEEE directive 2012/19/EC. Additional obligations may apply to customers who place these products in the markets where WEEE is enforced. 

- VCCI (Japan): 2015-04 Class B 

- IC (Canada): ICES-003 Class B 

- This Class B digital apparatus complies with Canadian ICES-003. 

- Cet appareil numérique de la classe B est conforme à la norme NMB-003 du Canada. 

- CAN ICES-3 (B)/NMB-3(B). 

## **FCC Rules** 

This equipment has been tested and found to comply with the limits for a Class B digital device, pursuant to part 15 of the FCC Rules. These limits are designed to provide reasonable protection against harmful interference in a residential installation. This equipment generates, uses, and can radiate radio frequency energy and, if not installed and used in accordance with the instructions, may cause harmful interference to radio communications. However, there is no guarantee that interference will not occur in a particular installation. If this equipment does cause harmful interference to radio or television reception, which can be determined by turning the equipment off and on, the user is encouraged to try to correct the interference by one or more of the following measures: 

- Reorient or relocate the receiving antenna. 

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**i300 microSDXC Card Compliance** 

- Increase the separation between the equipment and the receiver. 

- Connect the equipment into an outlet on a circuit different from that to which the receiver is connected. 

- Consult the dealer or an experienced radio/TV technician for help. 

Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2019 Micron Technology, Inc. All rights reserved. 

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## **i300 microSDXC Card Revision History** 

## **Revision History** 

## **Rev. C – 05/2020** 

- Updated surveillance recording capability 

## **Rev. B – 12/19** 

- Updated legal status to Production 

## **Rev. A – 09/19** 

- Preliminary version 

8000 S. Federal Way, P.O. Box 6, Boise, ID 83707-0006, Tel: 208-368-4000 www.micron.com/products/support Sales inquiries: 800-932-4992 Micron and the Micron logo are trademarks of Micron Technology, Inc. All other trademarks are the property of their respective owners. 

This data sheet contains minimum and maximum limits specified over the power supply and temperature range set forth herein. Although considered final, these specifications are subject to change, as further product development and data characterization sometimes occur. 

Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2019 Micron Technology, Inc. All rights reserved. 

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