MSR860G
Standard Recovery Diode, 600 V, 8 A, Single, 1.7 V, 120 ns, 100 A
- Manufacturer: ONSEMI
- Product type: Standard Recovery Rectifier Diodes
- No. of Pins: 3Pins
- Product Range: MSR86
- Diode Case Style: TO-220
- Diode Configuration: Single
- Forward Voltage Max: 1.7V
- Forward Surge Current: 100A
- Reverse Recovery Time: 120ns
- Average Forward Current: 8A
- Operating Temperature Max: 150°C
- Repetitive Peak Reverse Voltage: 600V
| Delivery and price | |
|---|---|
| Units per pack | 5000 |
| Price | 0.479 € |
| Current stock | 10+ |
| Lead time | 30 days |
MSR860G, MSRF860G ## Switch-mode Soft Recovery Power Rectifiers **Plastic TO−220 Package** These state−of−the−art devices are designed for use as free wheeling diodes in variable speed motor control applications and switching power supplies. ## **http://onsemi.com** ## **Features** **SOFT RECOVERY POWER RECTIFIER 8.0 AMPERES, 600 VOLTS** - Soft Recovery with Guaranteed Low Reverse Recovery Charge (QRR) and Peak Reverse Recovery Current (IRRM) - 150°C Operating Junction Temperature - Epoxy meets UL 94 V−0 @ 0.125 in **==> picture [492 x 507] intentionally omitted <==** **----- Start of picture text -----**<br> 1<br>• Low Forward Voltage 4<br>• Low Leakage Current 3 at<br>• These are Pb−Free Devices<br>4 4<br>Mechanical Characteristics:<br>• Case: Epoxy, Molded<br>• Weight: 1.9 Grams (Approximately) »<br>• Finish: All External Surfaces Corrosion Resistant and Terminal<br>Leads Readily Solderable<br>• Lead Temperature for Soldering Purposes:<br>260°C Max. for 10 Seconds 1 o@ 1<br>3 3<br>MAXIMUM RATINGS TO−220AC TO−220 FULLPAK<br>CASE 221B CASE 221AG<br>Rating Symbol Value Unit STYLE 1 STYLE 1<br>Peak Repetitive Reverse Voltage VRRM 600 V<br>Working Peak Reverse Voltage VRWM MARKING DIAGRAMS<br>DC Blocking Voltage VR<br>Average Rectified Forward Current IO 8.0 A<br>(Rated VR, TC = 125 ° C)<br>Peak Repetitive Forward Current (RatedVR, Square Wave, 20 kHz, TC = 125 ° C) IFRM 16 A pO} AY WWGMSR860 [O AY WWGMSRF860<br>Non−Repetitive Peak Surge Current IFSM 100 A KA KA<br>(Surge Applied at Rated Load Conditions<br>Halfwave, Single Phase, 60 Hz)<br>Storage/Operating Case Temperature Tstg, TC −65 to +150 ° C<br>Operating Junction Temperature TJ −65 to +150 ° C A = Assembly Location<br>Y = Year<br>THERMAL CHARACTERISTICS WW = Work Week<br>Parameter Symbol Value Unit G = Pb−Free Package<br>MSR860G ° C/W KA = Diode Polarity<br>Thermal Resistance, Junction−to−Case R JC 1.6<br>Thermal Resistance, Junction−to−Ambient R JA 72.8 ORDERING INFORMATION<br>MSRF860G ° C/W Device Package Shipping<br>Thermal Resistance, Junction−to−Case R JC 4.75<br>Thermal Resistance, Junction−to−Ambient R JA 75 MSR860G TO−220AC 50 Units / Rail<br>(Pb−Free)<br>Stresses exceeding those listed in the Maximum Ratings table may damage the<br>device. If any of these limits are exceeded, device functionality should not be MSRF860G TO−220FP 50 Units / Rail<br>assumed, damage may occur and reliability may be affected.<br>(Pb−Free)<br>=<br>© Semiconductor Components Industries, LLC, 2014 1 Publication Order Number:<br>February, 2014 − Rev. 6 MSR860/D<br>**----- End of picture text -----**<br> **MSR860G, MSRF860G** ## **ELECTRICAL CHARACTERISTICS** |**ELECTRICAL CHARACTERISTICS**||||| |---|---|---|---|---| |**Characteristic**|**Symbol**|**Value**||**Unit**| |Maximum Instantaneous Forward Voltage (IF= 8.0 A) (Note 1)<br>Maximum<br>Typical|VF|**TJ = 25**°**C**|**TJ = 150**°**C**|V| |||1.7<br>1.4|1.3<br>1.1|| |Maximum Instantaneous Reverse Current (VR= 600 V)<br>Maximum<br>Typical|IR|**TJ = 25**°**C**|**TJ = 150**°**C**|�A| |||10<br>2.0|1000<br>80|| |Maximum Reverse Recovery Time (Note 2)<br>(VR= 400 V, IF= 8.0 A, di/dt = 200 A/�s)<br>Maximum<br>Typical|trr|**TJ = 25**°**C**|**TJ = 125**°**C**|ns| |||120<br>95|190<br>125|| |Typical Recovery Softness Factor<br>(VR= 400 V, IF= 8.0 A, di/dt = 200 A/�s)|s = tb/ta|2.5|3.0|| |Maximum Peak Reverse Recovery Current<br>(VR= 400 V, IF= 8.0 A, di/dt = 200 A/�s)|IRRM|5.8|8.3|A| |Maximum Reverse Recovery Charge<br>(VR= 400 V, IF= 8.0 A, di/dt = 200 A/�s)|QRR|350|700|nC| Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulse Width ≤ 380 � s, Duty Cycle ≤ 2% 2. TRR measured projecting from 25% of IRRM to zero current ## **TYPICAL ELECTRICAL CHARACTERISTICS** **==> picture [489 x 384] intentionally omitted <==** **----- Start of picture text -----**<br> 100 100<br>T J = 150°C<br>10 125°C<br>100°C<br>1 25°C<br>TJ = 150°C<br>100°C 0.1<br>100 200 300 400 500 600<br>25°C VR, REVERSE VOLTAGE (VOLTS)<br>10 Figure 2. Typical Reverse Current<br>14<br>12 dc<br>10<br>8 SQUARE WAVE<br>6<br>4<br>2 RATED VR APPLIED<br>1<br>0<br>0.5 0.7 0.9 1.1 1.3 1.5 1.7 1.9 0 40 80 120 160<br>VF, FORWARD VOLTAGE DROP (VOLTS) TC, CASE TEMPERATURE (°C)<br>�<br>IR, REVERSE CURRENT ( A)<br>IF, INSTANTANEOUS FORWARD CURRENT (AMPS)<br>IF(AV), AVERAGE FORWARD CURRENT (AMPS)<br>**----- End of picture text -----**<br> **Figure 1. Typical Forward Voltage** **Figure 3. Current Derating, Case** **http://onsemi.com** **2** **MSR860G, MSRF860G** ## **TYPICAL ELECTRICAL CHARACTERISTICS** **==> picture [240 x 605] intentionally omitted <==** **----- Start of picture text -----**<br> 3.0<br>2.5<br>2.0<br>dc<br>1.5<br>SQUARE WAVE<br>1.0<br>0.5 RATED VR APPLIED<br>0<br>0 40 80 120 160<br>TA, AMBIENT TEMPERATURE (°C)<br>Figure 4. Current Derating, Ambient<br>160<br>TJ = 25°C<br>140 VR = 400 V<br>120<br>IF = 16 A<br>100<br>80 8 A<br>60<br>4 A<br>40<br>20<br>0<br>100 200 300 400 500<br>dIF/dt (A/�S)<br>Figure 6. Typical Reverse Recovery Time<br>8<br>I F = 16 A<br>6<br>8 A<br>4 A<br>4<br>2<br>TJ = 25°C<br>VR = 400 V<br>0<br>100 200 300 400 500<br>dIF/dt (A/�S)<br>IF(AV), AVERAGE FORWARD CURRENT (AMPS)<br>, REVERSE RECOVERY TIME (ns)<br>rr<br>t<br>, PEAK REVERSE RECOVERY CURRENT (AMPS)<br>IRRM<br>**----- End of picture text -----**<br> **Figure 8. Typical Peak Reverse Recovery Current** **==> picture [241 x 608] intentionally omitted <==** **----- Start of picture text -----**<br> 16<br>14<br>12<br>10<br>SQUARE WAVE dc<br>8<br>6<br>4<br>2 TJ = 150°C<br>0<br>0 2 4 6 8 10 12 14<br>IF(AV), AVERAGE FORWARD CURRENT (AMPS)<br>Figure 5. Power Dissipation<br>250<br>TJ = 125°C<br>VR = 400 V<br>200<br>150 IF = 16 A<br>8 A<br>100<br>4 A<br>50<br>0<br>100 200 300 400 500<br>dIF/dt (A/�S)<br>Figure 7. Typical Reverse Recovery Time<br>14<br>12<br>IF = 16 A<br>10<br>8 8 A<br>4 A<br>6<br>4<br>2 T J = 125°C<br>VR = 400 V<br>0<br>100 200 300 400 500<br>dIF/dt (A/�S)<br>PF(AV), AVERAGE POWER DISSIPATION (WATTS)<br>, REVERSE RECOVERY TIME (ns)<br>rr<br>t<br>, PEAK REVERSE RECOVERY CURRENT (AMPS)<br>IRRM<br>**----- End of picture text -----**<br> **Figure 9. Typical Peak Reverse Recovery Current** **http://onsemi.com** **3** **MSR860G, MSRF860G** ## **TYPICAL ELECTRICAL CHARACTERISTICS** **==> picture [489 x 172] intentionally omitted <==** **----- Start of picture text -----**<br> 350 900<br>800<br>300<br>700 IF = 16 A<br>250 IF = 16 A 600<br>200 500 8 A<br>8 A<br>400<br>150<br>4 A<br>4 A 300<br>100<br>200<br>50 TJ = 25 ° C TJ = 125°C<br>VR = 400 V 100 VR = 400 V<br>0 0<br>100 200 300 400 500 100 200 300 400 500<br>dIF/dt (A/�S) dIF/dt (A/�S)<br>, REVERSE RECOVERY CHARGE (nC) , REVERSE RECOVERY CHARGE (nC)<br>RR RR<br>Q Q<br>**----- End of picture text -----**<br> **Figure 10. Typical Reverse Recovery Charge** **Figure 11. Typical Reverse Recovery Charge** **==> picture [489 x 170] intentionally omitted <==** **----- Start of picture text -----**<br> 90 250<br>80 IF = 16 A IF = 16 A<br>200<br>70<br>60<br>150<br>50<br>8 A 8 A<br>40<br>100<br>30 4 A 4 A<br>20 50<br>TJ = 25°C TJ = 125°C<br>10<br>VR = 400 V VR = 400 V<br>0 0<br>100 200 300 400 500 100 200 300 400 500<br>dlF/dt (A/�S) dIF/dt (A/�S)<br>� �<br>, SWITCHING OFF LOSSES ( J) , SWITCHING OFF LOSSES ( J)<br>OFF OFF<br>E E<br>**----- End of picture text -----**<br> **Figure 12. Typical Switching Off Losses** **Figure 13. Typical Switching Off Losses** **==> picture [490 x 171] intentionally omitted <==** **----- Start of picture text -----**<br> 1.0<br>D = 0.5<br>0.1<br>0.1 0.05 P(pk) Z�JC(t) = r(t) R�JC<br>0.01 R�JC = 1.6°C/W MAX<br>D CURVES APPLY FOR POWER<br>PULSE TRAIN SHOWN<br>SINGLE PULSE t1 t2 READ TIME AT t1<br>DUTY CYCLE, D = t1/t2 T J(pk) - T C = P (pk) Z �JC (t)<br>0.01<br>0.01 0.1 1.0 10 100 1000<br>t, TIME (ms)<br>(NORMALIZED)<br>r(t), TRANSIENT THERMAL RESPONSE<br>**----- End of picture text -----**<br> **Figure 14. Thermal Response (MSR860)** **http://onsemi.com** **4** **MSR860G, MSRF860G** **==> picture [489 x 392] intentionally omitted <==** **----- Start of picture text -----**<br> 10<br>D = 0.5<br>0.2<br>1.0<br>0.1<br>0.05<br>0.02<br>0.1 P(pk) Z�JC(t) = r(t) R�JC<br>0.01 R�JC = 1.6°C/W MAX<br>D CURVES APPLY FOR POWER<br>PULSE TRAIN SHOWN<br>0.01 SINGLE PULSE t1 t2 READ TIME AT t1<br>DUTY CYCLE, D = t 1 /t 2 TJ(pk) - TC = P(pk) Z�JC(t)<br>0.001<br>0.000001 0.00001 0.0001 0.001 0.01 0.1 1.0 10 100 1000<br>t, TIME (s)<br>Figure 15. Thermal Response, (MSRF860) Junction−to−Case (R � JC)<br>100<br>D = 0.5<br>0.2<br>10 0.1<br>0.05<br>0.02<br>1.0<br>0.01<br>P (pk) Z�JC(t) = r(t) R�JC<br>0.1 R�JC = 1.6°C/W MAX<br>D CURVES APPLY FOR POWER<br>PULSE TRAIN SHOWN<br>0.01 SINGLE PULSE t1 t2 READ TIME AT t1<br>DUTY CYCLE, D = t1/t2 T J(pk) - T C = P (pk) Z� JC (t)<br>0.001<br>0.000001 0.00001 0.0001 0.001 0.01 0.1 1.0 10 100 1000<br>t, TIME (s)<br>C/W)<br>°<br>(NORMALIZED) (<br>r(t), TRANSIENT THERMAL RESPONSE<br>C/W)<br>°<br>(NORMALIZED) (<br>r(t), TRANSIENT THERMAL RESPONSE<br>**----- End of picture text -----**<br> **Figure 16. Thermal Response, (MSRF860) Junction−to−Ambient (R � JA)** **http://onsemi.com** **5** **MSR860G, MSRF860G** ## **PACKAGE DIMENSIONS** **TO−220 TWO−LEAD** CASE 221B−04 ISSUE F **==> picture [400 x 154] intentionally omitted <==** **----- Start of picture text -----**<br> |||||||||| |---|---|---|---|---|---|---|---|---| |NOTES:| |C|1.|DIMENSIONING AND TOLERANCING PER ANSI| |Y14.5M, 1982.| |Q|B|F|T|S|2.|CONTROLLING DIMENSION: INCH.| |INCHES|MILLIMETERS| |DIM|MIN|MAX|MIN|MAX| |4|A|0.595|0.620|15.11|15.75| |B|0.380|0.405|9.65|10.29| |A|C|0.160|0.190|4.06|4.82| |U|D|0.025|0.039|0.64|1.00| |1|3|F|0.142|0.161|3.61|4.09| |H|G|0.190|0.210|4.83|5.33| |H|0.110|0.130|2.79|3.30| |K|J|0.014|0.025|0.36|0.64| |K|0.500|0.562|12.70|14.27| |L|0.045|0.060|1.14|1.52| |Q|0.100|0.120|2.54|3.04|STYLE 1:| |L|R|0.080|0.110|2.04|2.79|PIN 1.|CATHODE| |D|R|S|0.045|0.055|1.14|1.39|2.|N/A| |T|0.235|0.255|5.97|6.48|3.|ANODE| |G|J|U|0.000|0.050|0.000|1.27|4.|CATHODE| **----- End of picture text -----**<br> **TO−220 FULLPAK, 2−LEAD** CASE 221AG ISSUE A **==> picture [427 x 211] intentionally omitted <==** **----- Start of picture text -----**<br> NOTES:<br>1. DIMENSIONING AND TOLERANCING PER ASME<br>A B SEATINGPLANE Y14.5M, 1994.<br>E 2. CONTROLLING DIMENSION: MILLIMETERS.<br>A 3. CONTOUR UNCONTROLLED IN THIS AREA.<br>E/2 P H1 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH<br>0.14 M B A M A1 AND GATE PROTRUSIONS. MOLD FLASH AND GATE<br>PROTRUSIONS NOT TO EXCEED 0.13 PER SIDE. THESE<br>4 DIMENSIONS ARE TO BE MEASURED AT OUTERMOST<br>Q gE D t ors ak 5. EXTREME OF THE PLASTIC BODY.DIMENSION b2 DOES NOT INCLUDE DAMBAR<br>C PROTRUSION. LEAD WIDTH INCLUDING PROTRUSION<br>1 2 3 NOTE 3 SHALL NOT EXCEED 2.00.<br>MILLIMETERS<br>DIM MIN MAX<br>A 4.30 4.70<br>L L1 A1 2.50 2.90<br>A2 2.50 2.90<br>b 0.54 0.84<br>b2 1.10 1.40<br>3X b c c 0.49 0.79<br>3X b2 0.25 M B A M C A2 DE 14.229.65 15.8810.67<br>e e 2.54 BSC<br>e1 STYLE 1: e1 5.08 BSC<br>PIN 1. CATHODE H1 5.97 6.48<br> 2. N/A L 12.70 14.73<br> 3. ANODE L1 --- 2.80<br>P 3.00 3.40<br>Q 2.80 3.20<br>**----- End of picture text -----**<br> **ON Semiconductor** and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. 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Updated at February 9, 2023
onsemi is a premier global supplier of intelligent power and sensing technologies, driving disruptive innovations across the automotive, industrial, and cloud infrastructure markets. Recognized for their commitment to sustainability and reliable supply chains, the company accelerates advancements in vehicle electrification, industrial automation, and 5G networks by solving the industry's most complex design challenges. At the core of their portfolio is an industry-leading selection of discrete semiconductors. This extensive range features thousands of high-performance bipolar transistors, single and dual MOSFETs, and a comprehensive array of diodes, including Zener, Schottky, and fast-recovery rectifiers. Engineered for superior thermal performance and energy efficiency, these foundational components are critical for demanding power conversion, switching, and signal conditioning applications. Beyond essential discretes, onsemi provides a robust suite of advanced power management and circuit protection solutions. Their lineup includes intelligent power modules, single IGBTs, and transient voltage suppression (TVS) diodes designed to safeguard sensitive circuitry. Complimented by integrated passive filters, AC/DC LED driver ICs, and specialized sub-2.4GHz RF transceivers, onsemi equips engineers with the scalable, high-quality technologies needed to build a cleaner, smarter, and more connected world.
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