MSR1560G
Fast / Ultrafast Diode, 600 V, 15 A, Single, 1.8 V, 45 ns, 100 A
- Manufacturer: ONSEMI
- Product type: Fast & Ultrafast Recovery Rectifier Diodes
- Repetitive Reverse Voltage Vrrm Max:600V; Forward Current If(AV):15A; Diode Configuration:Single; Forward Voltage VF Max:1.8V; Reverse Recovery Time trr Max:45ns; Forward Surge Curre
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 2 Pin
- Product Range: MSR15
- Qualification: -
- Diode Case Style: TO-220AC
- Diode Configuration: Single
- Forward Voltage Max: 1.8V
- Forward Surge Current: 100A
- Reverse Recovery Time: 45ns
- Average Forward Current: 15A
- Operating Temperature Max: 150°C
- Repetitive Peak Reverse Voltage: 600V
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 0.776 € |
| Current stock | 10+ |
| Lead time | 30 days |
## MSR1560G, MSRF1560G ## Switch-mode Soft Recovery Power Rectifier These state−of−the−art devices are designed for boost converter or hard−switched converter applications, especially for Power Factor Correction application. It could also be used as a free wheeling diode in variable speed motor control applications and switching mode power supplies. ## **http://onsemi.com** **==> picture [480 x 429] intentionally omitted <==** **----- Start of picture text -----**<br> Features SOFT RECOVERY<br>• Soft Recovery with Low Reverse Recovery Charge (QRR) and Peak POWER RECTIFIER<br>Reverse Recovery Current (IRRM)<br>15 AMPERES, 600 VOLTS<br>• Epoxy meets UL 94 V−0 @ 0.125 in<br>• Low Forward Voltage 1<br>4<br>• Low Leakage Current<br>3<br>• High Temperature Glass Passivated Junction<br>• These are Pb−Free Devices 4 4<br>—<br>Mechanical Characteristics: • Case: Epoxy, Molded »<br>• Weight: 1.9 Grams (Approximately)<br>• Finish: All External Surfaces Corrosion Resistant and Terminal<br>Leads Readily Solderable<br>• Lead Temperature for Soldering Purposes: 1 o@ 1<br>260°C Max. for 10 Seconds 3 3<br>TO−220AC TO−220 FULLPAK<br>CASE 221B CASE 221AG<br>MAXIMUM RATINGS STYLE 1 STYLE 1<br>Rating Symbol Value Unit<br>Peak Repetitive Reverse Voltage VRRM 600 V MARKING DIAGRAMS<br>Working Peak Reverse Voltage VRWM<br>DC Blocking Voltage VR<br>Average Rectified Forward Current IO 15 A<br>(At Rated VR, TC = 125 ° C) O o= [oO.}<br>AY WWG AYWWG<br>Peak Repetitive Forward Current (At RatedVR, Square Wave, 20 kHz,TC = 125 ° C) IFRM 30 A MSR1560KA MSRF1560KA<br>Non−Repetitive Peak Surge Current IFSM 100 A<br>(Surge applied at rated load conditions,<br>halfwave, single phase, 60 Hz)<br>Operating Junction and Storage TJ, Tstg −65 to +150 ° C<br>Temperature Range<br>A = Assembly Location<br>THERMAL CHARACTERISTICS Y = Year<br>WW = Work Week<br>Parameter Symbol Value Unit<br>G = Pb−Free Package<br>MSR1560G: Thermal Resistance ° C/W KA = Diode Polarity<br>**----- End of picture text -----**<br> **Parameter Symbol Value Unit** G = Pb−Free Package MSR1560G: Thermal Resistance ° C/W KA = Diode Polarity Junction−to−Case R JC 1.6 Junction−to−Ambient R JA 72.8 MSRF1560G: Thermal Resistance ° C/W **ORDERING INFORMATION** Junction−to−Case R JC 4.25 **Device Package Shipping** Junction−to−Ambient R JA 75 Stresses exceeding those listed in the Maximum Ratings table may damage the MSR1560G TO−220AC 50 Units/Rail device. If any of these limits are exceeded, device functionality should not be (Pb−Free) assumed, damage may occur and reliability may be affected. MSRF1560G TO−220FP 50 Units/Rail (Pb−Free) ~~———~~ Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Publication Order Number: **MSR1560/D** **1** © Semiconductor Components Industries, LLC, 2014 **February, 2014 − Rev. 7** **MSR1560G, MSRF1560G** ## **ELECTRICAL CHARACTERISTICS** |**Characteristic**|**Symbol**|**Value**|**Value**|**Unit**| |---|---|---|---|---| |Instantaneous Forward Voltage (Note 1) (IF= 15 A)<br>Maximum<br>Typical|VF|**TJ = 25**°**C**|**TJ = 150**°**C**|V| |||1.8<br>1.5|1.4<br>1.2|| |Instantaneous Reverse Current (VR= 600 V)<br>Maximum<br>Typical|IR|**TJ = 25**°**C**|**TJ = 150**°**C**|�A| |||15<br>0.4|5000<br>100|| |Reverse Recovery Time (Note 2) (VR= 30 V, IF= 1 A, di/dt = 100 A/�s)<br>Maximum<br>Typical|trr|**TJ = 25**°**C**|**TJ = 100**°**C**|ns| |||45<br>35|65<br>54|| |Typical Recovery Softness Factor (VR= 30 V, IF= 1 A, di/dt = 100 A/�s)|s = tb/ta|0.67|0.74|| |Typical Peak Reverse Recovery Current (VR= 30 V, IF= 1 A, di/dt = 100 A/�s)|IRRM|2.3|3.2|A| |Typical Reverse Recovery Charge (VR= 30 V, IF= 1 A, di/dt = 100 A/�s)|QRR|31|78|nC| Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulse Width ≤ 380 � s, Duty Cycle ≤ 2% 2. TRR measured projecting from 25% of IRRM to zero current **==> picture [492 x 413] intentionally omitted <==** **----- Start of picture text -----**<br> 100 100<br>VF @ 150 ° C VF @ 150 ° C<br>VF @ 25 ° C VF @ 25 ° C<br>10 10<br>zl<br>VF @ 100 ° C VF @ 100 ° C<br>1 1<br>0.1 0.1<br>0.3 0.7 1.1 1.5 1.9 2.3 2.7 0.3 0.5 0.7 0.9 1.1 1.3 1.5 1.7 1.9 2.1<br>VF, INTANTANEOUS VOLTAGE (VOLTS) VF, INSTANTANEOUS FORWARD CURRENT (AMPS)<br>, INSTANTANEOUS FORWARD CURRENT (AMPS)IF , INSTANTANEOUS FORWARD CURRENT (AMPS)IF<br>**----- End of picture text -----**<br> **Figure 1. Maximum Forward Voltage** **Figure 2. Typical Forward Voltage** **http://onsemi.com** **2** **MSR1560G, MSRF1560G** **==> picture [492 x 612] intentionally omitted <==** **----- Start of picture text -----**<br> 10000 1000<br>1000 IR @ 150 ° C 100<br>10 IR @ 150 ° C<br>100 IR @ 100 ° C 1 IR @ 100 ° C<br>10<br>0.1<br>1 IR @ 25 ° C 0.01 IR @ 25 ° C<br>0.1 0.001<br>0 100 200 300 400 500 600 0 100 200 300 400 500 600<br>VR, REVERSE VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS)<br>Figure 3. Maximum Reverse Current Figure 4. Typical Reverse Current<br>25 30<br>dc TJ = 150 ° C<br>20 TJ = 150 ° C<br>20 Square Wave<br>15 dc<br>Square Wave<br>10<br>10<br>5<br>0 0<br>0 50 100 150 200 0 10 20<br>TC, CASE TEMPERATURE ( ° C) IF(AV), AVERAGE FORWARD CURRENT (AMPS)<br>Figure 5. Current Derating Figure 6. Power Dissipation<br>400 350<br>350 TJ = 25 ° C 300 TJ = 25 ° C<br>300<br>250<br>250<br>200<br>200<br>150<br>150<br>100<br>100<br>50<br>50<br>0 0<br>0 10 20 30 40 50 0 10 20 30 40 50<br>VR, REVERSE VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS)<br>A) A)<br>� �<br>, REVERSE CURRENT ( REVERSE CURRENT (<br>IR IR,<br>(WATTS)<br>, AVERAGE FORWARD<br>IF(AV) , AVERAGE POWER DISSIPATION<br>F(AV)<br>P<br>C, CAPACITANCE (pF) C, CAPACITANCE (pF)<br>**----- End of picture text -----**<br> **Figure 7. Maximum Capacitance** **Figure 8. Typical Capacitance** **http://onsemi.com** **3** **MSR1560G, MSRF1560G** **==> picture [242 x 174] intentionally omitted <==** **----- Start of picture text -----**<br> 60<br>50<br>40 Trr vs. di/dt @ 25 ° C<br>30<br>ta vs. di/dt @ 25 ° C<br>20<br>10 tb vs. di/dt @ 25 ° C<br>0<br>25 100 175 250<br>dI/dt (A/ � S)<br>Time (nsec)<br>**----- End of picture text -----**<br> **Figure 9. Typical Trr vs. di/dt** **==> picture [234 x 174] intentionally omitted <==** **----- Start of picture text -----**<br> 80<br>60<br>trr<br>40 ta<br>tb<br>20<br>0<br>25 75 125 175<br>TEMPERATURE ( ° C)<br>Time (nsec)<br>**----- End of picture text -----**<br> **Figure 10. Typical Trr vs. Temperature** **==> picture [491 x 177] intentionally omitted <==** **----- Start of picture text -----**<br> 50<br>3<br>40<br>I F = 1 A<br>IF = 1 A<br>2 T J = 25 ° C 30<br>TJ = 25 ° C<br>20<br>1<br>0<br>25 75 125 175 225 25 100 175 250<br>dI/dt (A/ � S) dIF/dt (A/ � S))<br>(AMPS)<br>, PEAK RECOVERY CURRENT<br>IRRM , REVERSE RECOVERY CHARGE (nC)<br>RR<br>Q<br>**----- End of picture text -----**<br> **Figure 11. Typical Peak Reverse Recovery Current** **Figure 12. Typical Reverse Recovery Charge** **==> picture [242 x 173] intentionally omitted <==** **----- Start of picture text -----**<br> 65<br>55<br>IF = 1 A<br>45 VR = 30 V<br>35<br>25<br>25 100 175 250<br>dIF/dt (A/ � S)<br>J)<br>�<br>, SWITCHING OFF LOSSES (<br>OFF<br>E<br>**----- End of picture text -----**<br> **Figure 13. Typical Switching Off Losses** **http://onsemi.com** **4** **MSR1560G, MSRF1560G** **==> picture [485 x 247] intentionally omitted <==** **----- Start of picture text -----**<br> 10<br>ID = 0.5<br>1<br>0.1<br>0.05<br>0.01<br>Single Pulse<br>0.1<br>0.0001 0.001 0.01 0.1 1 10<br>t, Time (S)<br>R(t), TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br> **Figure 14. Transient Thermal Response** **==> picture [489 x 171] intentionally omitted <==** **----- Start of picture text -----**<br> 10<br>D = 0.5<br>0.2<br>1.0<br>0.1<br>0.05<br>0.02<br>0.1 P(pk) Z�JC(t) = r(t) R�JC<br>0.01 R�JC = 1.6°C/W MAX<br>D CURVES APPLY FOR POWER<br>PULSE TRAIN SHOWN<br>0.01 SINGLE PULSE t1 t2 READ TIME AT t1<br>DUTY CYCLE, D = t 1 /t 2 TJ(pk) - TC = P(pk) Z�JC(t)<br>0.001<br>0.000001 0.00001 0.0001 0.001 0.01 0.1 1.0 10 100 1000<br>t, TIME (s)<br>C/W)<br>°<br>(NORMALIZED) (<br>r(t), TRANSIENT THERMAL RESPONSE<br>**----- End of picture text -----**<br> **Figure 15. Thermal Response, (MSRF1560) Junction−to−Case (R � JC)** **http://onsemi.com** **5** **MSR1560G, MSRF1560G** **==> picture [489 x 171] intentionally omitted <==** **----- Start of picture text -----**<br> 100<br>D = 0.5<br>0.2<br>10 0.1<br>0.05<br>0.02<br>1.0<br>0.01<br>P (pk) Z�JC(t) = r(t) R�JC<br>0.1 R�JC = 1.6°C/W MAX<br>D CURVES APPLY FOR POWER<br>PULSE TRAIN SHOWN<br>0.01 SINGLE PULSE t1 t2 READ TIME AT t1<br>DUTY CYCLE, D = t1/t2 T J(pk) - T C = P (pk) Z� JC (t)<br>0.001<br>0.000001 0.00001 0.0001 0.001 0.01 0.1 1.0 10 100 1000<br>t, TIME (s)<br>C/W)<br>°<br>(NORMALIZED) (<br>r(t), TRANSIENT THERMAL RESPONSE<br>**----- End of picture text -----**<br> **Figure 16. Thermal Response, (MSRF1560) Junction−to−Ambient (R � JA)** **http://onsemi.com** **6** MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** **==> picture [470 x 282] intentionally omitted <==** **----- Start of picture text -----**<br> TO−220, 2−LEAD<br>CASE 221B−04<br>ISSUE F<br>DATE 12 APR 2013<br>o<br>NOTES:<br>C 1. DIMENSIONING AND TOLERANCING PER ANSI<br>Y14.5M, 1982.<br>Q B F T S 2. CONTROLLING DIMENSION: INCH.<br>INCHES MILLIMETERS<br>DIM MIN MAX MIN MAX<br>SCALE 1:1 4 A 0.595 0.620 15.11 15.75<br>B 0.380 0.405 9.65 10.29<br>ae A Lt Bobs, C 0.160 0.190 4.06 4.82<br>U D 0.025 0.039 0.64 1.00<br>1 3 F 0.142 0.161 3.61 4.09<br>H G 0.190 0.210 4.83 5.33<br>H 0.110 0.130 2.79 3.30<br>K J 0.014 0.025 0.36 0.64<br>K 0.500 0.562 12.70 14.27<br>L 0.045 0.060 1.14 1.52<br>Q 0.100 0.120 2.54 3.04<br>L R 0.080 0.110 2.04 2.79<br>D R S 0.045 0.055 1.14 1.39<br>T 0.235 0.255 5.97 6.48<br>G J U 0.000 0.050 0.000 1.27<br>STYLE 1: STYLE 2:<br>PIN 1. CATHODE PIN 1. ANODE<br> 2. N/A 2. N/A<br> 3. ANODE 3. CATHODE<br> 4. CATHODE 4. ANODE<br>**----- End of picture text -----**<br> **DOCUMENT NUMBER: 98ASB42149B DESCRIPTION: TO−220, 2−LEAD** ~~_~~ Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. **PAGE 1 OF 1** ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. 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Updated at June 8, 2026
onsemi is a premier global supplier of intelligent power and sensing technologies, driving disruptive innovations across the automotive, industrial, and cloud infrastructure markets. Recognized for their commitment to sustainability and reliable supply chains, the company accelerates advancements in vehicle electrification, industrial automation, and 5G networks by solving the industry's most complex design challenges. At the core of their portfolio is an industry-leading selection of discrete semiconductors. This extensive range features thousands of high-performance bipolar transistors, single and dual MOSFETs, and a comprehensive array of diodes, including Zener, Schottky, and fast-recovery rectifiers. Engineered for superior thermal performance and energy efficiency, these foundational components are critical for demanding power conversion, switching, and signal conditioning applications. Beyond essential discretes, onsemi provides a robust suite of advanced power management and circuit protection solutions. Their lineup includes intelligent power modules, single IGBTs, and transient voltage suppression (TVS) diodes designed to safeguard sensitive circuitry. Complimented by integrated passive filters, AC/DC LED driver ICs, and specialized sub-2.4GHz RF transceivers, onsemi equips engineers with the scalable, high-quality technologies needed to build a cleaner, smarter, and more connected world.
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