MSC2X50SDA170J

## **MSC2X51/50SDA170J Dual Silicon Carbide Schottky Barrier Diodes** 

## **Product Overview** 

The silicon carbide (SiC) power Schottky barrier diode (SBD) product line from Microsemi increases the performance over silicon diode solutions while lowering the total cost of ownership for high-voltage applications. MSC2X51/50SDA170J are dual 1700 V, 50 A SiC SBD devices in a SOT-227 package. 

**Figure 1 • Parallel MSC2X51SDA170J** 

**Figure 2 • Anti-parallel MSC2X50SDA170J** 

## **Features** 

The following are key features of the MSC2X51SDA170J and MSC2X50SDA170J devices: 

- No reverse recovery 

- Low forward voltage 

- Low leakage current 

- Avalanche-energy rated 

- RoHS compliant 

- Isolated voltage to 2500 V 

## **Benefits** 

The following are benefits of the MSC2X51SDA170J and MSC2X50SDA170J devices: 

- Outstanding performance at high-frequency operation 

- Direct mounting to heatsink (isolated package) 

- Low junction-to-case thermal resistance 

- RoHS compliant 

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Product Overview 

## **Applications** 

The MSC2X51SDA170J and MSC2X50SDA170J devices are designed for the following applications: 

- Power factor correction (PFC) 

- Anti-parallel diode 

   - Switch-mode power supply 

   - Inverters/converters 

   - Motor controllers 

- Freewheeling diode 

   - Switch-mode power supply 

   - Inverters/converters 

- Snubber/clamp diode 

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Device Specifications 

## **Device Specifications** 

This section shows the specifications of the MSC2X51SDA170J and MSC2X50SDA170J devices. 

## **Absolute Maximum Ratings** 

The following table shows the absolute maximum ratings per diode of the MSC2X51SDA170J and MSC2X50SDA170J devices. TC = 25 °C unless otherwise specified. 

**Table 1 • Absolute Maximum Ratings** 

|**Symbol**|**Parameter**|**Parameter**|**Ratings**|**Unit**|
|---|---|---|---|---|
|VR|Maximum DC reverse voltage||1700|V|
|IF|Maximum DC forward current|TC= 115 °C|50|A|



The following table shows the thermal and mechanical characteristics of the MSC2X51SDA170J and MSC2X50SDA170J devices. 

## **Table 2 • Thermal and Mechanical Characteristics** 

|**Symbol**|**Characteristics**|**Min**|**Typ**|**Max**|**Unit**|
|---|---|---|---|---|---|
|RΘJC|Junction-to-case thermal resistance||0.35|0.50|°C/W|
|VISOLATION|RMS voltage<br>(50 Hz–60 Hz sinusoidal waveform from<br>terminals to mounting base for 1 minute)|2500|||V|
|TJ, TSTG|Operating junction and storage tempera-<br>ture range|–55||175|°C|
|Wt|Package weight||1.03||oz|
||||29.2||g|
||Mounting torque, M4 screw||10||lbf-in|
||||1.1||N.m|



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Device Specifications 

## **Electrical Performance** 

The following table shows the static characteristics per diode of the MSC2X51SDA170J and MSC2X50SDA170J devices. TJ = 25 °C, unless otherwise specified. 

**Table 3 • Static Characteristics Per Diode** 

|**Symbol**|**Characteristics**|**Test Conditions**|**Test Conditions**|**Min**|**Typ**|**Max**|**Unit**|
|---|---|---|---|---|---|---|---|
|VF|Diode forward voltage|IF= 50 A|TJ= 25 °C||1.5|1.8|V|
||||TJ= 175 °C||2.0|||
|IRM|Reverse leakage current|VR= 1700 V|TJ= 25 °C||50|200|μA|
||||TJ= 175 °C||250|||
|QC|Total capacitive charge|VR= 900 V|||410||nC|
|CJ|Junction capacitance|VR= 600 V, f = 1 MHz|||300||pF|
|||VR= 900 V, f = 1 MHz|||250|||



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Device Specifications 

## **Typical Performance Curves** 

This section shows the typical performance curves per diode of the MSC2X51SDA170J and MSC2X50SDA170J devices. 

**Figure 3 • Maximum Transient Thermal Impedance** 

**Figure 4 • Forward Current vs. Forward Voltage** 

**Figure 5 • Reverse Current vs. Reverse Voltage** 

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Package Specification 

## **Package Specification** 

This section shows the package specification of the MSC2X51SDA170J and MSC2X50SDA170J devices. 

## **Package Outline Drawing** 

The following figure illustrates the SOT-227 package outline of the MSC2X51SDA170J and MSC2X50SDA170J devices. The dimensions in the figure below are in millimeters and (inches). 

**Figure 6 • Package Outline Drawing** 

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Legal 

## **Microsemi** 

2355 W. Chandler Blvd. Chandler, AZ 85224 USA 

Within the USA: +1 (480) 792-7200 Fax: +1 (480) 792-7277 

www.microsemi.com[© ] 2020 Microsemi and its corporate affiliates. All rights reserved. Microsemi and the Microsemi logo are trademarks of Microsemi Corporation and its corporate affiliates. All other trademarks and service marks are the property of their respective owners. 

Microsemi's product warranty is set forth in Microsemi's Sales Order Terms and Conditions. Information contained in this publication is provided for the sole purpose of designing with and using Microsemi products. Information regarding device applications and the like is provided only for your convenience and may be superseded by updates. Buyer shall not rely on any data and performance specifications or parameters provided by Microsemi. It is your responsibility to ensure that your application meets with your specifications. THIS INFORMATION IS PROVIDED "AS IS." MICROSEMI MAKES NO REPRESENTATIONS OR WARRANTIES OF ANY KIND WHETHER EXPRESS OR IMPLIED, WRITTEN OR ORAL, STATUTORY OR OTHERWISE, RELATED TO THE INFORMATION, INCLUDING BUT NOT LIMITED TO ITS CONDITION, QUALITY, PERFORMANCE, NON-INFRINGEMENT, MERCHANTABILITY OR FITNESS FOR A PARTICULAR PURPOSE. IN NO EVENT WILL MICROSEMI BE LIABLE FOR ANY INDIRECT, SPECIAL, PUNITIVE, INCIDENTAL OR CONSEQUENTIAL LOSS, DAMAGE, COST OR EXPENSE WHATSOEVER RELATED TO THIS INFORMATION OR ITS USE, HOWEVER CAUSED, EVEN IF MICROSEMI HAS BEEN ADVISED OF THE POSSIBILITY OR THE DAMAGES ARE FORESEEABLE. TO THE FULLEST EXTENT ALLOWED BY LAW, MICROSEMI’S TOTAL LIABILITY ON ALL CLAIMS IN RELATED TO THIS INFORMATION OR ITS USE WILL NOT EXCEED THE AMOUNT OF FEES, IF ANY, YOU PAID DIRECTLY TO MICROSEMI FOR THIS INFORMATION. Use of Microsemi devices in life support, mission-critical equipment or applications, and/or safety applications is entirely at the buyer’s risk, and the buyer agrees to defend and indemnify Microsemi from any and all damages, claims, suits, or expenses resulting from such use. No licenses are conveyed, implicitly or otherwise, under any Microsemi intellectual property rights unless otherwise stated. 

Microsemi Corporation, a subsidiary of Microchip Technology Inc. (Nasdaq: MCHP), and its corporate affiliates are leading providers of smart, connected and secure embedded control solutions. Their easy-to-use development tools and comprehensive product portfolio enable customers to create optimal designs which reduce risk while lowering total system cost and time to market. These solutions serve more than 120,000 customers across the industrial, automotive, consumer, aerospace and defense, communications and computing markets. Headquartered in Chandler, Arizona, the company offers outstanding technical support along with dependable delivery and quality. Learn more at **www.microsemi.com** . 

053-4111 | November 2020 | Released 

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