MSC090SDA330B2

## **MSC090SDA330B2** 

## **3300 V, 90 A Silicon Carbide Schottky Barrier Diode** 

## **Product Overview** 

The silicon carbide (SiC) power Schottky barrier diode (SBD) product line from Microchip increases the performance over silicon diode solutions while lowering the total cost of ownership for high-voltage applications. The MSC090SDA330B2 device is a 3300 V, 90 A SiC SBD in a two-lead T-MAX package. 

## **Features** 

The following are key features of the MSC090SDA330B2 device: 

- No reverse recovery 

- Low forward voltage 

- Low leakage current 

- RoHS compliant 

## **Benefits** 

The following are benefits of the MSC090SDA330B2 device: 

- High switching frequency 

- Low switching losses 

- Low noise (EMI) switching 

- Higher reliability systems 

- Increased system power density 

## **Applications** 

The MSC090SDA330B2 device is designed for the following applications: 

- Power factor correction (PFC) 

- Anti-parallel diode 

   - Switch-mode power supply 

   - Inverters/converters 

   - Motor controllers 

- Freewheeling diode 

   - Switch-mode power supply 

   - Inverters/converters 

- Snubber/clamp diode 

**Datasheet** 

DS00004450A-page 1 

© 2022 Microchip Technology Inc. and its subsidiaries 

**MSC090SDA330B2 Device Specifications** 

## **1. Device Specifications** 

This section shows the specifications of the MSC090SDA330B2 device. 

## **1.1 Absolute Maximum Ratings** 

The following table shows the absolute maximum ratings of the MSC090SDA330B2 device. TC = 25 °C unless otherwise specified. 

**Table 1-1. Absolute Maximum Ratings** 

|**Symbol**|**Parameter**||**Ratings**|**Unit**|
|---|---|---|---|---|
|VR|Maximum DC reverse voltage||3300|V|
|VRRM|Maximum peak repetitive reverse voltage||||
|VRWM|Maximum working peak reverse voltage||||
|IF|Maximum DC forward current|TC= 25 °C|184|A|
|||TC= 135 °C|89||
|||TC= 145 °C|75||
|IFRM|Repetitive peak forward surge current (tp = 8.3 ms, half sine wave)||258||
|IFSM|Non-repetitive forward surge current (tp = 8.3 ms, half sine wave)||615||
|PTOT|Total power dissipation|TC= 25 °C|1500|W|
|||TC= 110 °C|650||



The following table shows the thermal and mechanical characteristics of the MSC090SDA330B2 device. 

**Table 1-2. Thermal and Mechanical Characteristics** 

|**Symbol**|**Characteristic/Test Conditions**|**Min**|**Typ**|**Max**|**Unit**|
|---|---|---|---|---|---|
|RθJC|Junction-to-case thermal resistance||0.07|0.10|°C/W|
|TJ, TSTG|Operating junction and storage temperature<br>range|–55||175|°C|
|TL|Lead temperature for 10 seconds|||300||
||Reflow temperature|||260||
|Wt|Package weight||0.22||oz|
||||6.2||g|



**Datasheet** 

DS00004450A-page 2 

© 2022 Microchip Technology Inc. and its subsidiaries 

**MSC090SDA330B2 Device Specifications** 

## **1.2 Electrical Performance** 

The following table shows the static characteristics of the MSC090SDA330B2 device. TJ = 25 °C unless otherwise specified. 

**Table 1-3. Static Characteristics** 

|**Symbol**|**Characteristic**|**Test Conditions**|**Min**|**Typ**|**Max**|**Unit**|
|---|---|---|---|---|---|---|
|VF|Forward voltage|IF= 90 A, TJ= 25 °C||2.1|2.4|V|
|||IF= 90 A, TJ= 175 °C||4.3|||
|IRM|Reverse leakage current|VR= 3300 V, TJ= 25 °C||15|200|µA|
|||VR= 3300 V, TJ= 175 °C||150|||
|QC|Total capacitive charge|VR= 1650 V||927||nC|
|CJ|Junction capacitance|VR= 1 V, f = 1 MHz||6326||pF|
|||VR= 1100 V, f = 1 MHz||361|||
|||VR= 2200 V, f = 1 MHz||256|||



## **1.3 Typical Performance Curves** 

This section shows the typical performance curves of the MSC090SDA330B2 device. 

**==> picture [220 x 10] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 1-1. Maximum Transient Thermal Impedance<br>**----- End of picture text -----**<br>


**Datasheet** 

DS00004450A-page 3 

© 2022 Microchip Technology Inc. and its subsidiaries 

**MSC090SDA330B2 Device Specifications** 

**==> picture [206 x 10] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 1-2. Forward Current vs. Forward Voltage<br>**----- End of picture text -----**<br>


**Figure 1-4. Max. Power Dissipation vs. Case Temp.** 

**Figure 1-3. Max. Forward Current vs. Case Temp.** 

**Figure 1-5. Reverse Current vs. Reverse Voltage** 

**Datasheet** 

DS00004450A-page 4 

© 2022 Microchip Technology Inc. and its subsidiaries 

**MSC090SDA330B2 Device Specifications** 

**Figure 1-6. Total Charge vs. Reverse Voltage** 

**Figure 1-7. Capacitance vs. Reverse Voltage** 

**Datasheet** 

DS00004450A-page 5 

© 2022 Microchip Technology Inc. and its subsidiaries 

**MSC090SDA330B2 Package Specification** 

## **2. Package Specification** 

This section shows the package specification of the MSC090SDA330B2 device. 

## **2.1 Package Outline Drawing** 

The following figure illustrates the T-MAX package outline of the MSC090SDA330B2 device. 

**Figure 2-1. Package Outline Drawing** 

The following table shows the T-MAX dimensions and should be used in conjunction with the package outline drawing. 

**Table 2-1. T-MAX Dimensions** 

|**Symbol**<br>~~ee~~|**Min (mm)**<br>~~ee~~|**Max (mm)**<br>~~ee~~|**Min (in.)**<br>~~ee~~|**Max (in.)**<br>~~ee~~|
|---|---|---|---|---|
|A<br>~~ee~~|4.69<br>~~ee~~|5.31<br>~~ee~~|0.185<br>~~ee~~|0.209<br>~~ee~~|
|B|1.49|2.49|0.059|0.098|



**Datasheet** 

DS00004450A-page 6 

© 2022 Microchip Technology Inc. and its subsidiaries 

**MSC090SDA330B2 Package Specification** 

|**...........continued**|**...........continued**|**...........continued**|**...........continued**|**...........continued**|
|---|---|---|---|---|
|**Symbol**|**Min (mm)**|**Max (mm)**|**Min (in.)**|**Max (in.)**|
|C|2.21|2.59|0.087|0.102|
|D|0.40|0.79|0.016|0.031|
|H|20.80|21.46|0.819|0.845|
|I|19.81|20.32|0.780|0.800|
|J|4.00|4.50|0.157|0.177|
|K|1.01|1.40|0.040|0.055|
|M|1.65|2.13|0.065|0.084|
|N|15.49|16.26|0.610|0.640|
|O|13.50|14.50|0.531|0.571|
|P|16.50|17.50|0.650|0.689|
|Q|10.90 BSC||0.430 BSC||
|R|2.00|2.75|0.079|0.108|
|Terminal 1|Cathode||||
|Terminal 2|Anode||||
|Terminal 3|Cathode||||



**Datasheet** 

DS00004450A-page 7 

© 2022 Microchip Technology Inc. and its subsidiaries 

**MSC090SDA330B2 Revision History** 

## **3. Revision History** 

## **Table 3-1. Revision History** 

|**Revision**|**Date**|**Description**|
|---|---|---|
|A|03/2022|Document created.|



**Datasheet** 

DS00004450A-page 8 

© 2022 Microchip Technology Inc. and its subsidiaries 

**MSC090SDA330B2** 

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**Datasheet** 

DS00004450A-page 9 

© 2022 Microchip Technology Inc. and its subsidiaries 

**MSC090SDA330B2** 

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ISBN: 978-1-5224-9841-4 

**Datasheet** 

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© 2022 Microchip Technology Inc. and its subsidiaries 

**MSC090SDA330B2** 

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**Datasheet** 

DS00004450A-page 11 

© 2022 Microchip Technology Inc. and its subsidiaries 

**==> picture [39 x 54] intentionally omitted <==**

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**Datasheet** 

DS00004450A-page 12 

© 2022 Microchip Technology Inc. and its subsidiaries