MSC030SDA120BCT

## **MSC030SDA120BCT Zero Recovery Silicon Carbide Schottky Dual Diode** 

## **Product Overview** 

The silicon carbide (SiC) power Schottky barrier diodes (SBD) product line from Microsemi increases your performance over silicon diode solutions while lowering your total cost of ownership for high-voltage applications. The MSC030SDA120BCT is a 1200 V, 30 A SiC dual common cathode SBD in a three-lead TO-247 package shown below. 

## **Features** 

The following are key features of the MSC030SDA120BCT device: 

- No reverse recovery 

- Low forward voltage 

- Low leakage current 

- Avalanche energy rated 

- RoHS compliant 

## **Benefits** 

The following are benefits of the MSC030SDA120BCT device: 

- High switching frequency 

- Low switching losses 

- Low noise (EMI) switching 

- Higher reliability systems 

- Increased system power density 

## **Applications** 

The MSC030SDA120BCT device is designed for the following applications: 

- Power factor correction (PFC) 

- Anti-parallel diode 

   - Switch-mode power supply 

   - Inverters/converters 

   - Motor controllers 

- Freewheeling diode 

   - Switch-mode power supply 

   - Inverters/converters 

- Snubber/clamp diode 

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Electrical Specifications 

## **Electrical Specifications** 

This section details the specifications for the MSC030SDA120BCT device. All ratings are per leg. 

## **Absolute Maximum Ratings** 

The following table shows the absolute maximum ratings for the MSC030SDA120BCT device. 

All Ratings: TC = 25 °C unless otherwise specified. 

## **Table 1 • Absolute Maximum Ratings** 

**==> picture [415 x 383] intentionally omitted <==**

**----- Start of picture text -----**<br>
Sym- Parameter Ratings Unit<br>bol<br>VR Maximum DC reverse voltage 1200 V<br>VRRM Maximum peak repetitive reverse voltage<br>VRWM Maximum working peak reverse voltage<br>IF Maximum DC forward current TC = 25 °C 65 A<br>TC = 135 °C 29<br>TC = 145 °C 24<br>IFRM Repetitive peak forward surge current (TC = 25 °C, tp = 8.3 ms, half sine 92<br>wave)<br>IFSM Non-repetitive forward surge current (TC = 25°C, tp = 8.3 ms, half sine wave) 165<br>PTOT Power dissipation TC = 25 °C 259 W<br>TC = 110 °C 112<br>TJ ,TST- Operating junction and storage temperature range –55 to 175 °C<br>G<br>TL Lead temperature for 10 seconds 300<br>EAS Single pulse avalanche energy (starting TJ = 25 °C, L = 0.22 mH, peak IL = 3 100 mJ<br>0 A)<br>**----- End of picture text -----**<br>


The following table shows the thermal and mechanical characteristics of the MSC030SDA120BCT device. 

**Table 2 • Thermal and Mechanical Characteristics** 

|**Symbol**|**Characteristic**|**Min**|**Typ**|**Max**|**Unit**|
|---|---|---|---|---|---|
|RθJC|Junction-to-case thermal resistance||0.4|0.58|°C/W|
|WT|Package weight||0.22||oz|



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Electrical Specifications 

|**Symbol**|**Characteristic**|**Min**|**Typ**|**Max**|**Unit**|
|---|---|---|---|---|---|
||||5.9||g|
||Maximum mounting torque|||10|lbf-in|
|||||1.1|N-m|



## **Electrical Performance** 

The following table shows the static characteristics of the MSC030SDA120BCT device. 

## **Table 3 • Static Characteristics** 

|**Symbol**|**Characteristic**|**Test Conditions**|**Min**|**Typ**|**Max**|**Unit**|
|---|---|---|---|---|---|---|
|VF|Forward Voltage|IF= 30 A, TJ= 25 °C||1.5|1.8|V|
|||IF= 30 A, TJ= 175 °C||2.1|||
|IRM|Reverse leakage current|VR= 1200 V, TJ= 25 °C||9|200|μA|
|||VR= 1200 V, TJ= 175 °C||150|||
|QC|Total capacitive charge|VR= 600 V, TJ= 25 °C||130||nC|
|CJ|Junction capacitance|VR= 400 V, TJ= 25 °C, ƒ = 1 MHz||141||pF|
||Junction capacitance|VR= 800 V, TJ= 25 °C, ƒ = 1 MHz||105|||



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Electrical Specifications 

## **Performance Curves** 

This section shows the typical performance curves for the MSC030SDA120BCT device. 

**Figure 1 • Maximum Transient Thermal Impedance** 

**Figure 2 • Forward Current vs. Forward Voltage** 

**Figure 3 • Max Forward Current vs. Case Temp** 

**Figure 4 • Max Power Dissipation vs. Case Temp** 

**Figure 5 • Reverse Current vs. Reverse Voltage** 

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Electrical Specifications 

**Figure 6 • Total Capacitive Charge vs. VR** 

**Figure 7 • Junction Capacitance vs. VR** 

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Package Specification 

## **Package Specification** 

This section outlines the package specification for the MSC030SDA120BCT device. 

## **Package Outline Drawing** 

This section details the TO-247 package drawing of the MSC030SDA120BCT device. Dimensions are in millimeters and (inches). 

## **Figure 8 • Package Outline Drawing** 

The following table shows the TO-247 dimensions and should be used in conjunction with the package outline drawing. 

## **Table 4 • Dimensions** 

|**Symbol**|**Min. (mm)**|**Max. (mm)**|**Min. (in.)**|**Max (in.)**|
|---|---|---|---|---|
|A|4.69|5.31|0.185|0.209|
|B|1.49|2.49|0.059|0.098|
|C|2.21|2.59|0.087|0.102|
|D|0.40|0.79|0.016|0.031|
|E|5.38|6.20|0.212|0.244|
|F|3.50|3.81|0.138|0.150|



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Package Specification 

|**Symbol**|**Min. (mm)**|**Max. (mm)**|**Min. (in.)**|**Max (in.)**|
|---|---|---|---|---|
|G|6.15 BSC||0.242 BSC||
|H|20.80|21.46|0.819|0.845|
|I|19.81|20.32|0.780|0.800|
|J|4.00|4.50|0.157|0.177|
|K|1.01|1.40|0.040|0.055|
|L|2.87|3.12|0.113|0.123|
|M|1.65|2.13|0.065|0.084|
|N|15.49|16.26|0.610|0.640|
|O|13.50|14.50|0.531|0.571|
|P|16.50|17.50|0.650|0.689|
|Q|5.45 BSC||0.215 BSC||
|R|2.00|2.75|0.079|0.108|
|S|7.10|7.50|0.280|0.295|
|Terminal 1|Anode 1||||
|Terminal 2|Common cathode||||
|Terminal 3|Anode 2||||
|Terminal 4|Common cathode||||



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Legal 

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053-4114 | February 2020 | Released 

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