MSC030SDA120B

# **MSC030SDA120B Datasheet Zero Recovery Silicon Carbide Schottky Diode** 

**Final January 2018** 

Zero Recovery Silicon Carbide Schottky Diode 

## **Contents** 

|1|Revision History  ............................................................................................................................ 1|Revision History  ............................................................................................................................ 1|
|---|---|---|
||1.1|Revision A  ........................................................................................................................................... 1|
|2|Product Overview  .......................................................................................................................... 2||
||2.1|Features .............................................................................................................................................. 2|
||2.2|Benefits ............................................................................................................................................... 2|
||2.3|Applications ........................................................................................................................................ 2|
|3|Electrical Specifications .................................................................................................................. 3||
||3.1|Absolute Maximum Ratings ................................................................................................................ 3|
||3.2|Electrical Performance  ....................................................................................................................... 4|
||3.3|Performance Curves  ........................................................................................................................... 5|
|4|Package Specification ..................................................................................................................... 7||
||4.1|Package Outline Drawing  ................................................................................................................... 7|



Microsemi Proprietary and Confidential. MSC030SDA120B Datasheet Revision A 

Zero Recovery Silicon Carbide Schottky Diode 

## **1 Revision History** 

The revision history describes the changes that were implemented in the document. The changes are listed by revision, starting with the most current publication. 

## **1.1 Revision A** 

Revision A was published in January 2018. It is the first publication of this document. 

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Zero Recovery Silicon Carbide Schottky Diode 

## **2 Product Overview** 

The silicon carbide (SiC) power Schottky barrier diodes (SBD) product line from Microsemi increases your performance over silicon diode solutions while lowering your total cost of ownership for highvoltage applications. The MSC030SDA120B is a 1200 V, 30 A SiC SBD in a two-lead TO-247 package shown below. 

## **2.1** 

## **Features** 

The following are key features of the MSC030SDA120B device: 

- Low forward voltage 

- Low leakage current 

- No reverse recovery current/no forward recovery 

- Avalanche energy rated 

- RoHS compliant 

## **2.2** 

## **Benefits** 

The following are benefits of the MSC030SDA120B device: 

- Higher-reliability systems 

- Minimizes heat sink requirements 

- Higher efficiency 

## **2.3** 

## **Applications** 

The MSC030SDA120B device is designed for the following applications: 

- H/EV powertrain and EV charger 

- Power supply and distribution 

- PV inverter, converter, and industrial motor drives 

- Smart grid transmission and distribution 

- Aviation 

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Zero Recovery Silicon Carbide Schottky Diode 

## **3 Electrical Specifications** 

This section details the electrical specifications for the MSC030SDA120B device. 

## **3.1 Absolute Maximum Ratings** 

The following table shows the absolute maximum ratings for the MSC030SDA120B device. 

All Ratings: TC = 25 °C unless otherwise specified. 

## **Table 1 • Absolute Maximum Ratings** 

|Symbol|Symbol|Parameter|||Ratings|Unit|
|---|---|---|---|---|---|---|
|VR||Maximum DC reverse voltage|||1200|V|
|VRRM||Maximum peak repetitive reverse voltage|||||
|VRWM||Maximum working peak reverse voltage|||||
|IF||Maximum DC forward current||T = 25 °C<br>C|65|A|
|||||T = 135 °C<br>C|29||
|||||T = 145 °C<br>C|24||
|IFRM||Repetitive peak forward surge current (T|= 25 °C, t = 8.3 ms, half sine<br>C<br>p||92||
|||wave)|||||
|IFSM||Non-repetitive forward surge current (T = 25°C, t<br>C|= 25°C, t = 8.3 ms, half sine<br>p||165||
|||wave)|||||
|PTOT||Power dissipation||T = 25 °C<br>C|259|W|
|||||T = 110 °C<br>C|112||
|T  , T<br>J|STG|Operating junction and storage temperature range|||–55 to 175|°C|
|TL||Lead temperature for 10 seconds|||300||
|EAS||Single pulse avalanche energy (starting T  = 25 °C, L = 0.22 mH,|Single pulse avalanche energy (starting T  = 25 °C, L = 0.22 mH,<br>J||100|mJ|
|||peak I  = 30 A)<br>L|||||



The following table shows the thermal and mechanical characteristics of the MSC030SDA120B device. 

## **Table 2 • Thermal and Mechanical Characteristics** 

|Symbol|Characteristic|Min|Typ|Max|Unit|
|---|---|---|---|---|---|
|RθJC|Junction-to-case thermal resistance||0.4|0.58|°C/W|
|WT|Package weight||0.22||oz|
||||5.9||g|
|Torque|Maximum mounting torque|||10|lb-in|
|||||1.1|N-m|



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Zero Recovery Silicon Carbide Schottky Diode 

## **3.2 Electrical Performance** 

The following table shows the static characteristics of the MSC030SDA120B device. 

## **Table 3 • Static Characteristics** 

|Symbol|Characteristic/Test Conditions|||Min|Typ|Max|Unit|
|---|---|---|---|---|---|---|---|
|VF|Forward Voltage|I  = 30 A, T  = 25 °C<br>F|I  = 30 A, T  = 25 °C<br>J||1.5|1.8|V|
|||I  = 30 A, T  = 175 °C<br>F|I  = 30 A, T  = 175 °C<br>J||2.1|||
|IRM|Reverse leakage current|V|= 1200 V, T  = 25 °C<br>R<br>J||9|200|μA|
|||V|= 1200 V, T  = 175 °C<br>R<br>J||150|||
|QC|Total capacitive charge V = 600 V, T  = 25 °C<br>R<br>J||||130||nC|
|CJ|Junction capacitance V = 400 V, T  = 25 °C, ƒ = 1 MHz<br>R<br>J|= 400 V, T  = 25 °C, ƒ = 1 MHz|||141||pF|
||Junction capacitance V = 800 V, T  = 25 °C, ƒ = 1 MHz<br>R<br>J|= 800 V, T  = 25 °C, ƒ = 1 MHz|||105|||



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Zero Recovery Silicon Carbide Schottky Diode 

## **3.3 Performance Curves** 

This section shows the typical performance curves for the MSC030SDA120B device. 

**Figure 1 • Maximum Transient Thermal Impedance** 

**Figure 2 • Forward Current vs. Forward Voltage** 

**Figure 3 • Max Forward Current vs. Case Temp** 

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Zero Recovery Silicon Carbide Schottky Diode 

**Figure 4 • Max Power Dissipation vs. Case Temp** 

**Figure 6 • Total Capacitive Charge vs. Reverse Voltage** 

**Figure 5 • Reverse Current vs. Reverse Voltage** 

**Figure 7 • Junction Capacitance vs. Reverse Voltage** 

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Zero Recovery Silicon Carbide Schottky Diode 

## **4** 

## **Package Specification** 

This section outlines the package specification for the MSC030SDA120B device. 

## **4.1 Package Outline Drawing** 

This section details the TO-247 package drawing of the MSC030SDA120B device. Dimensions are in millimeters and (inches). 

## **Figure 8 • Package Outline Drawing** 

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Zero Recovery Silicon Carbide Schottky Diode 

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