MSC020SDA120K

## **MSC020SDA120K Zero Recovery Silicon Carbide Schottky Diode** 

## **Product Overview** 

The silicon carbide (SiC) power Schottky barrier diode (SBD) product line from Microsemi increases the performance over silicon diode solutions while lowering the total cost of ownership for high-voltage applications. MSC020SDA120K is a 1200 V, 20 A SiC SBD in a two-lead TO-220 package. 

## **Features** 

The following are key features of the MSC020SDA120K device: 

- No reverse recovery 

- Low forward voltage 

- Low leakage current 

- Avalanche-energy rated 

- RoHS compliant 

## **Benefits** 

The following are benefits of the MSC020SDA120K device: 

- High switching frequency 

- Low switching losses 

- Low noise (EMI) switching 

- Higher reliability systems 

- Increased system power density 

## **Applications** 

The MSC020SDA120K device is designed for the following applications: 

- Power factor correction (PFC) 

- Anti-parallel diode 

   - Switch-mode power supply 

   - Inverters/converters 

   - Motor controllers 

- Freewheeling diode 

   - Switch-mode power supply 

   - Inverters/converters 

- Snubber/clamp diode 

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Device Specifications 

## **Device Specifications** 

This section shows the specifications of the MSC020SDA120K device. 

## **Absolute Maximum Ratings** 

The following table shows the absolute maximum ratings for the MSC020SDA120K device. TC = 25 °C unless otherwise specified. 

## **Table 1 • Absolute Maximum Ratings** 

|**Symbol**|**Parameter**||**Ratings**|**Unit**|
|---|---|---|---|---|
|VR|Maximum DC reverse voltage||1200|V|
|VRRM|Maximum peak repetitive reverse voltage||1200||
|VRWM|Maximum working peak reverse voltage||1200||
|IF|Maximum DC forward current|TC= 25 °C|49|A|
|||TC= 135 °C|22||
|||TC= 145 °C|18||
|IFRM|Repetitive peak forward surge current (TC= 25 °C,<br>tp= 8.3 ms, half sine wave)||64||
|IFSM|Non-repetitive forward surge current (TC= 25 °C,<br>tp= 8.3 ms, half sine wave)||115||
|PTOT|Power dissipation|TC= 25 °C|186|W|
|||TC= 110 °C|80||
|EAS|Single pulse avalanche energy (starting TJ= 25 °C,<br>peak IL= 20 A)||100|mJ|



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Device Specifications 

The following table shows the thermal and mechanical characteristics of the MSC020SDA120K device. 

**Table 2 • Thermal and Mechanical Characteristics** 

|**Symbol**|**Characteristic/Test Conditions**|**Min**|**Typ**|**Max**|**Unit**|
|---|---|---|---|---|---|
|RθJC|Junction-to-case thermal resistance||0.65|0.95|°C/W|
|TJ, TSTG|Operating junction and storage temperature range|–55||175|°C|
|TL|Lead temperature for 10 seconds||300||°C|
|Wt|Package weight||0.07||oz|
||||1.9||g|
||Mounting torque, 6-32 or M3 screw|||10|lbf-in|
|||||1.1|N-m|



## **Electrical Performance** 

The following table shows the static characteristics of the MSC020SDA120K device. TJ = 25 °C unless otherwise specified. 

## **Table 3 • Static Characteristics** 

|**Symbol**|**Characteristic**|**Test Conditions**|**Min**|**Typ**|**Max**|**Unit**|
|---|---|---|---|---|---|---|
|VF|Forward voltage|IF= 20 A||1.5|1.8|V|
|||IF= 20 A, TJ= 175 °C||2.1|||
|IRM|Reverse leakage current|VR= 1200 V||6|200|μA|
|||VR= 1200 V, TJ= 175 °C||100|||
|QC|Total capacitive charge|VR= 600 V||91||nC|
|CJ|Junction capacitance|VR= 1 V, ƒ = 1 MHz||1130||pF|
||Junction capacitance|VR= 400 V, ƒ = 1 MHz||91|||
||Junction capacitance|VR= 800 V, ƒ = 1 MHz||74|||



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Device Specifications 

## **Typical Performance Curves** 

This section shows the typical performance curves of the MSC020SDA120K device. 

**Figure 1 • Maximum Transient Thermal Impedance** 

**Figure 2 • Forward Current vs. Forward Voltage** 

**Figure 3 • Max. Forward Current vs. Case Temp.** 

**Figure 4 • Max. Power Dissipation vs. Case Temp.** 

**Figure 5 • Reverse Current vs. Reverse Voltage** 

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Device Specifications 

**Figure 6 • Total Charge vs. Reverse Voltage** 

**Figure 7 • Capacitance vs. Reverse Voltage** 

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Package Specification 

## **Package Specification** 

This section shows the package specification of the MSC020SDA120K device. 

## **Package Outline Drawing** 

The following figure illustrates the TO-220 package outline of the MSC020SDA120K device. 

**Figure 8 • Package Outline Drawing** 

The following table shows the TO-220 dimensions and should be used in conjunction with the package outline drawing. 

**Table 4 • TO-220 Dimensions** 

|**Symbol**|**Min (mm)**|**Max (mm)**|**Min (in.)**|**Max (in.)**|
|---|---|---|---|---|
|A|4.32|4.57|0.170|0.180|
|B|1.14|1.40|0.045|0.055|
|C|2.50|2.74|0.098|0.108|
|D|0.36|0.53|0.014|0.021|
|E|2.65|3.05|0.104|0.120|
|F|3.60|3.96|0.142|0.156|



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Package Specification 

|**Symbol**|**Min (mm)**|**Max (mm)**|**Min (in.)**|**Max (in.)**|
|---|---|---|---|---|
|G|14.50|15.60|0.571|0.614|
|H|2.39|3.65|0.094|0.144|
|I|6.00|6.80|0.236|0.268|
|J|8.40|9.00|0.331|0.354|
|K|13.00|14.00|0.512|0.051|
|L|1.23|1.39|0.048|0.055|
|M|0.69|0.88|0.027|0.035|
|N|10.00|10.36|0.394|0.408|
|O|7.57|7.90|0.298|0.311|
|P|12.20|13.10|0.480|0.516|
|Q|2.54 BSC (nom.)||0.100 BSC (nom.)||
|Terminal 1|Cathode||||
|Terminal 2|Anode||||
|Terminal 3|Cathode||||



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Legal 

## **Microsemi** 

2355 W. Chandler Blvd. Chandler, AZ 85224 USA 

## Within the USA: +1 (480) 792-7200 Fax: +1 (480) 792-7277 

www.microsemi.com[© ] 2020 Microsemi and its corporate affiliates. All rights reserved. Microsemi and the Microsemi logo are trademarks of Microsemi Corporation and its corporate affiliates. All other trademarks and service marks are the property of their respective owners. 

Microsemi's product warranty is set forth in Microsemi's Sales Order Terms and Conditions. Information contained in this publication is provided for the sole purpose of designing with and using Microsemi products. Information regarding device applications and the like is provided only for your convenience and may be superseded by updates. Buyer shall not rely on any data and performance specifications or parameters provided by Microsemi. It is your responsibility to ensure that your application meets with your specifications. THIS INFORMATION IS PROVIDED "AS IS." MICROSEMI MAKES NO REPRESENTATIONS OR WARRANTIES OF ANY KIND WHETHER EXPRESS OR IMPLIED, WRITTEN OR ORAL, STATUTORY OR OTHERWISE, RELATED TO THE INFORMATION, INCLUDING BUT NOT LIMITED TO ITS CONDITION, QUALITY, PERFORMANCE, NON-INFRINGEMENT, MERCHANTABILITY OR FITNESS FOR A PARTICULAR PURPOSE. IN NO EVENT WILL MICROSEMI BE LIABLE FOR ANY INDIRECT, SPECIAL, PUNITIVE, INCIDENTAL OR CONSEQUENTIAL LOSS, DAMAGE, COST OR EXPENSE WHATSOEVER RELATED TO THIS INFORMATION OR ITS USE, HOWEVER CAUSED, EVEN IF MICROSEMI HAS BEEN ADVISED OF THE POSSIBILITY OR THE DAMAGES ARE FORESEEABLE. TO THE FULLEST EXTENT ALLOWED BY LAW, MICROSEMI’S TOTAL LIABILITY ON ALL CLAIMS IN RELATED TO THIS INFORMATION OR ITS USE WILL NOT EXCEED THE AMOUNT OF FEES, IF ANY, YOU PAID DIRECTLY TO MICROSEMI FOR THIS INFORMATION. Use of Microsemi devices in life support, mission-critical equipment or applications, and/or safety applications is entirely at the buyer’s risk, and the buyer agrees to defend and indemnify Microsemi from any and all damages, claims, suits, or expenses resulting from such use. No licenses are conveyed, implicitly or otherwise, under any Microsemi intellectual property rights unless otherwise stated. 

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053-4120 | July 2020 | Released 

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