MSC010SDA170B

## **MSC010SDA170B Zero Recovery Silicon Carbide Schottky Diode** 

## **Product Overview** 

The silicon carbide (SiC) power Schottky barrier diode (SBD) product line from Microsemi increases the performance over silicon diode solutions while lowering the total cost of ownership for high-voltage applications. The MSC010SDA170B device is a 1700 V, 10 A SiC SBD in a TO-247 package. 

## **Features** 

The following are key features of the MSC010SDA170B device: 

- No reverse recovery 

- Low forward voltage 

- Low leakage current 

- Avalanche energy rated 

- RoHS compliant 

## **Benefits** 

The following are benefits of the MSC010SDA170B device: 

- High switching frequency 

- Low switching losses 

- Low noise (EMI) switching 

- Higher reliability systems 

- Increased system power density 

## **Applications** 

The MSC010SDA170B device is designed for the following applications: 

- Power factor correction (PFC) 

- Anti-parallel diode 

   - Switch-mode power supply 

   - Inverters/converters 

   - Motor controllers 

- Freewheeling diode 

   - Switch-mode power supply 

   - Inverters/converters 

- Snubber/clamp diode 

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Device Specifications 

## **Device Specifications** 

This section details the device specifications for the MSC010SDA170B device. 

## **Absolute Maximum Ratings** 

The following table shows the absolute maximum ratings for the MSC010SDA170B device. TC = 25 °C unless otherwise specified. 

## **Table 1 • Absolute Maximum Ratings** 

|**Symbol**|**Parameter**||**Ratings**|**Unit**|
|---|---|---|---|---|
|VR|Maximum DC reverse voltage||1700|V|
|VRRM|Maximum peak repetitive reverse voltage||1700||
|VRWM|Maximum working peak reverse voltage||1700||
|IF|Maximum DC forward current|TC= 25 °C|31|A|
|||TC= 135 °C|14||
|||TC= 145 °C|12||
|IFRM|Repetitive peak forward surge current (TC= 25 °C,<br>tp= 8.3 ms, half sine wave)||43||
|IFSM|Non-repetitive forward surge current (TC= 25 °C,<br>tp= 8.3 ms, half sine wave)||90||
|Ptot|Power dissipation|TC= 25 °C|163|W|
|||TC= 110 °C|71||
|EAS|Single pulse avalanche energy (starting TJ= 25 °C, L = 2<br>.0 mH, peak IL= 10 A)||100|mJ|



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Device Specifications 

The following table shows the thermal and mechanical characteristics of the MSC010SDA170B device. **Table 2 • Thermal and Mechanical Characteristics** 

|**Symbol**|**Characteristic/Test Conditions**|**Min**|**Typ**|**Max**|**Unit**|
|---|---|---|---|---|---|
|RθJC|Junction-to-case thermal resistance||0.63|0.92|°C/W|
|TJ, TSTG|Operating junction and storage temperature range||–55 to 175||°C|
|TL|Lead temperature for 10 seconds||300||°C|
|Wt|Package weight||0.22||oz|
||||6.2||g|
||Mounting torque, 6-32 or M3 screw|||10|lbf-in|
|||||1.1|N-m|



## **Electrical Performance** 

The following table shows the static characteristics of the MSC010SDA170B device. 

## **Table 3 • Static Characteristics** 

|**Symbol**|**Characteristic**|**Test Conditions**|**Min**|**Typ**|**Max**|**Unit**|
|---|---|---|---|---|---|---|
|VF|Forward voltage|IF= 10 A, TJ= 25 °C||1.5|1.8|V|
|||IF= 10 A, TJ= 175 °C||2.1|||
|IRM|Reverse leakage current|VR= 1700 V, TJ= 25 °C||4|200|μA|
|||VR= 1700 V, TJ= 175 °C||10|||
|QC|Total capacitive charge|VR= 900 V, TJ= 25 °C||84||nC|
|CJ|Junction capacitance|VR= 1 V, TJ= 25 °C, ƒ = 1 MHz||820||pF|
||Junction capacitance|VR= 600 V, TJ= 25 °C, ƒ = 1 MHz||61|||
||Junction capacitance|VR= 900 V, TJ= 25 °C, ƒ = 1 MHz||51|||



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Device Specifications 

## **Typical Performance Curves** 

This section shows the typical performance curves of the MSC010SDA170B device. 

**Figure 1 • Maximum Transient Thermal Impedance** 

**Figure 2 • Forward Current vs. Forward Voltage** 

**Figure 3 • Max. Forward Current vs. Case Temp.** 

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Device Specifications 

**Figure 4 • Max. Power Dissipation vs. Case Temp.** 

**Figure 6 • Total Capacitive Charge vs. VR** 

**Figure 5 • Reverse Current vs. Reverse Voltage** 

**Figure 7 • Junction Capacitance vs. VR** 

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Package Specification 

## **Package Specification** 

This section outlines the package specification for the MSC010SDA170B device. 

## **Package Outline Drawing** 

This section shows the TO-247 package outline of the MSC010SDA170B device. The dimensions in the figure below are in millimeters and (inches). 

**Figure 8 • Package Outline Drawing** 

The following table shows the MSC010SDA170B dimensions and should be used in conjunction with the package outline drawing. 

## **Table 4 • TO-247 Dimensions** 

|**Symbol**|**Min (mm)**|**Max (mm)**|**Min (in.)**|**Max (in.)**|
|---|---|---|---|---|
|A|4.69|5.31|0.185|0.209|
|B|1.49|2.49|0.059|0.098|
|C|2.21|2.59|0.087|0.102|
|D|0.40|0.79|0.016|0.031|
|E|5.38|6.20|0.212|0.244|



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Package Specification 

|**Symbol**|**Min (mm)**|**Max (mm)**|**Min (in.)**|**Max (in.)**|
|---|---|---|---|---|
|F|3.50|3.81|0.138|0.150|
|G|6.15 BSC||0.242 BSC||
|H|20.80|21.46|0.819|0.845|
|I|19.81|20.32|0.780|0.800|
|J|4.00|4.50|0.157|0.177|
|K|1.01|1.40|0.040|0.055|
|L|2.87|3.12|0.113|0.123|
|M|1.65|2.13|0.065|0.084|
|N|15.49|16.26|0.610|0.640|
|O|13.50|14.50|0.531|0.571|
|P|16.50|17.50|0.650|0.689|
|Q|5.45 BSC||0.215 BSC||
|R|2.00|2.75|0.079|0.108|
|S|7.10|7.50|0.280|0.295|
|Terminal 1|Cathode||||
|Terminal 2|Anode||||
|Terminal 3|Cathode||||



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Legal 

## **Microsemi** 

2355 W. Chandler Blvd. Chandler, AZ 85224 USA 

## Within the USA: +1 (480) 792-7200 Fax: +1 (480) 792-7277 

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Microsemi's product warranty is set forth in Microsemi's Sales Order Terms and Conditions. Information contained in this publication is provided for the sole purpose of designing with and using Microsemi products. Information regarding device applications and the like is provided only for your convenience and may be superseded by updates. Buyer shall not rely on any data and performance specifications or parameters provided by Microsemi. It is your responsibility to ensure that your application meets with your specifications. THIS INFORMATION IS PROVIDED "AS IS." MICROSEMI MAKES NO REPRESENTATIONS OR WARRANTIES OF ANY KIND WHETHER EXPRESS OR IMPLIED, WRITTEN OR ORAL, STATUTORY OR OTHERWISE, RELATED TO THE INFORMATION, INCLUDING BUT NOT LIMITED TO ITS CONDITION, QUALITY, PERFORMANCE, NON-INFRINGEMENT, MERCHANTABILITY OR FITNESS FOR A PARTICULAR PURPOSE. IN NO EVENT WILL MICROSEMI BE LIABLE FOR ANY INDIRECT, SPECIAL, PUNITIVE, INCIDENTAL OR CONSEQUENTIAL LOSS, DAMAGE, COST OR EXPENSE WHATSOEVER RELATED TO THIS INFORMATION OR ITS USE, HOWEVER CAUSED, EVEN IF MICROSEMI HAS BEEN ADVISED OF THE POSSIBILITY OR THE DAMAGES ARE FORESEEABLE. TO THE FULLEST EXTENT ALLOWED BY LAW, MICROSEMI’S TOTAL LIABILITY ON ALL CLAIMS IN RELATED TO THIS INFORMATION OR ITS USE WILL NOT EXCEED THE AMOUNT OF FEES, IF ANY, YOU PAID DIRECTLY TO MICROSEMI FOR THIS INFORMATION. Use of Microsemi devices in life support, mission-critical equipment or applications, and/or safety applications is entirely at the buyer’s risk, and the buyer agrees to defend and indemnify Microsemi from any and all damages, claims, suits, or expenses resulting from such use. No licenses are conveyed, implicitly or otherwise, under any Microsemi intellectual property rights unless otherwise stated. 

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