MSC010SDA070K

## **MSC010SDA070K** 

## **Zero Recover Silicon Carbide Schottk Diode y y** 

## **Product Overview** 

The silicon carbide (SiC) power Schottky barrier diode (SBD) product line from Microchip increases the performance over silicon diode solutions while lowering the total cost of ownership for high-voltage applications. The MSC010SDA070K device is a 700 V, 10 A SiC SBD in a two-lead TO-220 package. 

## **Features** 

The following are key features of the MSC010SDA070K device: 

- No reverse recovery 

- Low forward voltage 

- Low leakage current 

- Avalanche-energy rated 

- RoHS compliant 

## **Benefits** 

The following are benefits of the MSC010SDA070K device: 

- High switching frequency 

- Low switching losses 

- Low noise (EMI) switching 

- Higher reliability systems 

- Increased system power density 

## **Applications** 

The MSC010SDA070K device is designed for the following applications: 

- Power factor correction (PFC) 

- Anti-parallel diode 

   - Switch-mode power supply 

   - Inverters/converters 

   - Motor controllers 

- Freewheeling diode 

   - Switch-mode power supply 

   - Inverters/converters 

- Snubber/clamp diode 

**Datasheet** 

DS-00003907A-page 1 

© 2021 Microchip Technology Inc. 

**MSC010SDA070K Device Specifications** 

## **1. Device Specifications** 

This section shows the specifications of the MSC010SDA070K device. 

## **1.1 Absolute Maximum Ratings** 

The following table shows the absolute maximum ratings of the MSC010SDA070K device. TC = 25 °C unless otherwise specified. 

**Table 1-1. Absolute Maximum Ratings** 

|**Symbol**|**Parameter**||**Ratings**|**Unit**|
|---|---|---|---|---|
|VR|Maximum DC reverse voltage||700|V|
|VRRM|Maximum peak repetitive reverse voltage||||
|VRWM|Maximum working peak reverse voltage||||
|IF|Maximum DC forward current|TC= 25 °C|24|A|
|||TC= 135 °C|10||
|||TC= 145 °C|8||
|IFRM|Repetitive peak forward surge current (TC= 25 °C, tp = 8.3 ms, half<br>sine wave)||34||
|IFSM|Non-repetitive forward surge current (TC= 25 °C, tp = 8.3 ms, half<br>sine wave)||58||
|PTOT|Total power dissipation|TC= 25 °C|83|W|
|||TC= 110 °C|36||
|EAS|Single-pulse avalanche energy (starting TJ= 25 °C,<br>peak IL= 10 A)|100||mJ|



The following table shows the thermal and mechanical characteristics of the MSC010SDA070K device. 

**Table 1-2. Thermal and Mechanical Characteristics** 

|**Symbol**|**Characteristic/Test Conditions**|**Min**|**Typ**|**Max**|**Unit**|
|---|---|---|---|---|---|
|RθJC|Junction-to-case thermal resistance||1.30|1.80|°C/W|
|TJ, TSTG|Operating junction and storage temperature<br>range|–55||175|°C|
|TL|Lead temperature for 10 seconds|||300||
|Wt|Package weight||0.07||oz|
||||1.9||g|
||Mounting torque, 6-32 or M3 screw|||10|lbf-in|
|||||1.1|N-m|



**Datasheet** 

DS-00003907A-page 2 

© 2021 Microchip Technology Inc. 

**MSC010SDA070K Device Specifications** 

## **1.2 Electrical Performance** 

The following table shows the static characteristics of the MSC010SDA070K device. TJ = 25 °C unless otherwise specified. 

**Table 1-3. Static Characteristics** 

|**Symbol**|**Characteristic**|**Test Conditions**|**Min**|**Typ**|**Max**|**Unit**|
|---|---|---|---|---|---|---|
|VF|Forward voltage|IF= 10 A, TJ= 25 °C||1.5|1.8|V|
|||IF= 10 A, TJ= 175 °C||1.8|||
|IRM|Reverse leakage current|VR= 700 V, TJ= 25 °C||3|200|µA|
|||VR= 700 V, TJ= 175 °C||15|||
|QC|Total capacitive charge|VR= 400 V||27||nC|
|CJ|Junction capacitance|VR= 1 V, f = 1 MHz||353||pF|
|||VR= 200 V, f = 1 MHz||54|||
|||VR= 400 V, f = 1 MHz||46|||



## **1.3 Typical Performance Curves** 

This section shows the typical performance curves of the MSC010SDA070K device. 

**==> picture [222 x 10] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 1-1. Maximum Transient Thermal Impedance<br>**----- End of picture text -----**<br>


**Datasheet** 

DS-00003907A-page 3 

© 2021 Microchip Technology Inc. 

**MSC010SDA070K Device Specifications** 

**==> picture [208 x 10] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 1-2. Forward Current vs. Forward Voltage<br>**----- End of picture text -----**<br>


**Figure 1-4. Max. Power Dissipation vs. Case Temp.** 

**Figure 1-3. Max. Forward Current vs. Case Temp.** 

**Figure 1-5. Reverse Current vs. Reverse Voltage** 

**Datasheet** 

DS-00003907A-page 4 

© 2021 Microchip Technology Inc. 

**MSC010SDA070K Device Specifications** 

**Figure 1-6. Total Charge vs. Reverse Voltage** 

**Figure 1-7. Capacitance vs. Reverse Voltage** 

**Datasheet** 

DS-00003907A-page 5 

© 2021 Microchip Technology Inc. 

**MSC010SDA070K Package Specification** 

## **2. Package Specification** 

This section shows the package specification of the MSC010SDA070K device. 

## **2.1 Package Outline Drawing** 

The following figure illustrates the TO-220 package outline of the MSC010SDA070K device. 

**Figure 2-1. Package Outline Drawing** 

The following table shows the TO-220 dimensions and should be used in conjunction with the package outline drawing. 

**Datasheet** 

DS-00003907A-page 6 

© 2021 Microchip Technology Inc. 

**MSC010SDA070K Package Specification** 

**Table 2-1. TO-220 Dimensions** 

|**Symbol**|**Min (mm)**|**Max (mm)**|**Min (in.)**|**Max (in.)**|
|---|---|---|---|---|
|A|4.32|4.57|0.170|0.180|
|B|1.14|1.40|0.045|0.055|
|C|2.50|2.74|0.098|0.108|
|D|0.36|0.53|0.014|0.021|
|E|2.65|3.05|0.104|0.120|
|F|3.60|3.96|0.142|0.156|
|G|14.50|15.60|0.571|0.614|
|H|2.39|3.65|0.094|0.144|
|I|6.00|6.80|0.236|0.268|
|J|8.40|9.00|0.331|0.354|
|K|13.00|14.00|0.512|0.051|
|L|1.23|1.39|0.048|0.055|
|M|0.69|0.88|0.027|0.035|
|N|10.00|10.36|0.394|0.408|
|O|7.57|7.90|0.298|0.311|
|P|12.20|13.10|0.480|0.516|
|Q|2.54 BSC (nom.)||0.100 BSC (nom.)||
|Terminal 1|Cathode||||
|Terminal 2|Anode||||
|Terminal 3|Cathode||||



**Datasheet** 

DS-00003907A-page 7 

© 2021 Microchip Technology Inc. 

**MSC010SDA070K Revision History** 

## **3. Revision History** 

**Table 3-1. Revision History** 

|**Revision**|**Date**|**Description**|
|---|---|---|
|A|03/2021|Document migrated from Microsemi<br>template to Microchip template;<br>Assigned Microchip literature number<br>DS-00003907A,which replaces the<br>previous Microsemi literature number<br>053-4083.|
|Initial release (Microsemi Revision A)|12/2017|Document created.|



**Datasheet** 

DS-00003907A-page 8 

© 2021 Microchip Technology Inc. 

**MSC010SDA070K** 

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**Datasheet** 

DS-00003907A-page 9 

© 2021 Microchip Technology Inc. 

**MSC010SDA070K** 

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ISBN: 978-1-5224-7905-5 

**Datasheet** 

DS-00003907A-page 10 

© 2021 Microchip Technology Inc. 

**MSC010SDA070K** 

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**Datasheet** 

DS-00003907A-page 11 

© 2021 Microchip Technology Inc. 

**==> picture [39 x 54] intentionally omitted <==**

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**Datasheet** 

DS-00003907A-page 12 

© 2021 Microchip Technology Inc.