MSA1162GT1G

Bipolar (BJT) Single Transistor, PNP, 50 V, 100 mA, 200 mW, SC-59, Surface Mount

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Manufacturer: ONSEMI
Product type: Single Bipolar Junction Transistors - BJT
Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-50V; Transition Frequency ft:80MHz; Power Dissipation Pd:200mW; DC Collector Current:-100mA; DC Current Gain hFE:200hFE
MSL: MSL 1 - Unlimited
SVHC: No SVHC (25-Jun-2025)
No. of Pins: 3Pins
Product Range: -
Qualification: AEC-Q101
Power Dissipation: 200mW
Transistor Mounting: Surface Mount
Transistor Polarity: PNP
Transition Frequency: 80MHz
Transistor Case Style: SC-59
DC Current Gain hFE Min: 200hFE
Operating Temperature Max: 150°C
Continuous Collector Current: 100mA
Collector Emitter Voltage Max: 50V

Delivery and price
Units per pack	5000
Price	0.022 €
Current stock	1000+
Lead time	7 days

Datasheet

Updated at March 14, 2026