MRS1504T3G

## MRS1504T3G, NRVS1504T3G 

## Surface Mount Standard Recovery Power Rectifier **SMB Power Surface Mount Package** 

Features mesa epitaxial construction with glass passivation. Ideally suited for high frequency switching power supplies; free wheeling diodes and polarity protection diodes. 

## **Features** 

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**STANDARD RECOVERY RECTIFIER 1.5 AMPERES, 400 VOLTS** 

- Compact Package with J−Bend Leads Ideal for Automated Handling 

- Stable, High Temperature, Glass Passivated Junction 

- AEC−Q101 Qualified and PPAP Capable 

- NRVS Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements 

- All Packages are Pb-Free* 

## **Mechanical Characteristics:** 

**SMB CASE 403A PLASTIC** 

- Case: Molded Epoxy 

- Epoxy Meets UL 94 V−0 @ 0.125 in 

## **MARKING DIAGRAM** 

- Weight: 95 mg (Approximately) 

- Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable 

- Maximum Temperature of 260°C / 10 Seconds for Soldering 

- Polarity: Notch and/or Band in Plastic Body Indicates Cathode Lead 

- ESD Ratings: 

   - ♦ Machine Model = C 

   - ♦ Human Body Model = 3A 

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AYWW<br>RGG<br>A = Assembly Location<br>Y = Year<br>WW = Work Week<br>RGG = Device Code<br>= Pb−Free Package<br>**----- End of picture text -----**<br>


(Note: Microdot may be in either location) 

**ORDERING INFORMATION Device Package Shipping**[†] MRS1504T3G SMB 2,500 / (Pb−Free) Tape & Reel NRVS1504T3G SMB 2,500 / (Pb−Free) Tape & Reel ~~=~~ †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 

> *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 

Publication Order Number: **MRS1504T3/D** 

**1** 

© Semiconductor Components Industries, LLC, 2012 **July, 2012 − Rev. 6** 

**MRS1504T3G, NRVS1504T3G** 

## **MAXIMUM RATINGS** 

|**MAXIMUM RATINGS**||||
|---|---|---|---|
|**Rating**|**Symbol**|**Value**|**Unit**|
|Peak Repetitive Reverse Voltage<br>Working Peak Reverse Voltage<br>DC Blocking Voltage|VRRM<br>VRWM<br>VR|400|V|
|Average Rectified Forward Current<br>(At Rated VR, TI= 118°C)|IO|1.5|A|
|Peak Repetitive Forward Current<br>(Rated VR, Square Wave, 20 kHz, TI= 118°C)|IFRM|3.0|A|
|Non−Repetitive Peak Surge Current<br>(Surge applied at rated load conditions, halfwave, single phase, 60 Hz)|IFSM|50|A|
|Storage/Operating Case Temperature Range|Tstg, TC|−55 to 150|°C|
|Operating Temperature Range|TJ|−55 to 150|°C|



Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 

## **THERMAL CHARACTERISTICS** 

|**THERMAL CHARACTERISTICS**||||
|---|---|---|---|
|**Rating**|**Symbol**|**Value**|**Unit**|
|Thermal Resistance, Junction−to−Lead (Note 1)|Rtjl|18|°C/W|
|Thermal Resistance, Junction−to−Ambient (on 1″sq. Cu. PCB pattern)|Rtja|79|°C/W|



1. Minimum pad size. 

## **ELECTRICAL CHARACTERISTICS** 

|**ELECTRICAL CHARACTERISTICS**|||||
|---|---|---|---|---|
|**Rating**|**Symbol**|**TJ = 25**�**C**|**TJ = 100**�**C**|**Unit**|
|Maximum Instantaneous Forward Voltage (Note 2), see Figure 2<br>(IF= 1.5 A)<br>(IF= 2.25 A)|VF|1.04<br>1.10|0.96<br>1.02|V|
|Maximum Instantaneous Reverse Current, see Figure 4<br>(VR= 400 V)<br>(VR= 200 V)|IR|1.0<br>0.5|340<br>180|�A|



2. Pulse Test: Pulse Width ≤ 250 � s, Duty Cycle ≤ 2.0% 

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**2** 

**MRS1504T3G, NRVS1504T3G** 

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100 100<br>10 10<br>TJ = 100°C<br>TJ = 150°C TJ = 100°C<br>1.0 TJ = 25°C 1.0 TJ = 150°C<br>TJ = 25°C<br>TJ = -40°C<br>0.1 0.1<br>0.6 0.8 1.0 1.2 1.4 1.6 0.6 0.8 1.0 1.2 1.4 1.6<br>VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) VF, MAXIMUM INSTANTANEOUS FORWARD VOLTAGE (VOLTS)<br>Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage<br>100E-6 10E-3<br>T J  = 150°C<br>10E-6 TJ = 150°C 1.0E-3<br>TJ = 100°C 100E-6 TJ = 100°C<br>1.0E-6<br>10E-6<br>100E-9<br>1.0E-6<br>10E-9 TJ = 25°C T J  = 25°C<br>100E-9<br>1.0E-9 10E-9<br>0 100 200 300 400 0 100 200 300 400<br>VR, REVERSE VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS)<br>Figure 3. Typical Reverse Current Figure 4. Maximum Reverse Current<br>2.5 2.5<br>FREQ = 20 kHz<br>dc<br>dc<br>2.0 2.0 SQUARE WAVE<br>SQUARE WAVE I pk /I o  = �<br>1.5 Ipk/Io = � 1.5 I pk /I o  = 5<br>1.0 Ipk/Io = 5 1.0 Ipk/Io = 10<br>Ipk/Io = 10 Ipk/Io = 20<br>0.5 Ipk/Io = 20 0.5<br>0 0<br>0 20 40 60 80 100 120 140 160 0 0.5 1.0 1.5 2.0 2.5<br>TL, LEAD TEMPERATURE (°C) IO, AVERAGE FORWARD CURRENT (AMPS)<br>Figure 5. Current Derating Figure 6. Forward Power Dissipation<br>IF, INSTANTANEOUS FORWARD CURRENT (AMPS) IF, INSTANTANEOUS FORWARD CURRENT (AMPS)<br>, REVERSE CURRENT (AMPS)<br>IR<br>, MAXIMUM REVERSE CURRENT (AMPS)<br>IR<br>, AVERAGE FORWARD CURRENT (AMPS)<br>IO<br>PFO, AVERAGE POWER DISSIPATION (WATTS)<br>**----- End of picture text -----**<br>


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**3** 

**MRS1504T3G, NRVS1504T3G** 

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100<br>TJ = 25°C<br>10<br>1.0<br>0 10 20 30 40 50 60 70 80<br>VR, REVERSE VOLTAGE (VOLTS)<br>Figure 7. Capacitance<br>1.0<br>50%<br>20%<br>10%<br>0.1<br>5.0%<br>2.0%<br>1.0%<br>0.01<br>Rtjl(t) = Rtjl * r(t)<br>0.001<br>0.00001 0.0001 0.001 0.01 0.1 1.0 10 100<br>T, TIME (s)<br>C, CAPACITANCE (pF)<br>, TRANSIENT THERMAL RESISTANCE (NORMALIZED<br>(T)<br>R<br>**----- End of picture text -----**<br>


**Figure 8. Thermal Response, Junction−to−Lead** 

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1.0<br>50%<br>20%<br>0.1<br>10%<br>5.0%<br>2.0%<br>0.01<br>1.0%<br>Rtjl(t) = Rtjl * r(t)<br>0.001<br>0.00001 0.0001 0.001 0.01 0.1 1.0 10 100 1,000<br>T, TIME (s)<br>, TRANSIENT THERMAL RESISTANCE (NORMALIZED)<br>(T)<br>R<br>**----- End of picture text -----**<br>


**Figure 9. Thermal Response, Junction−to−Ambient** 

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**4** 

**MRS1504T3G, NRVS1504T3G** 

## **PACKAGE DIMENSIONS** 

**SMB** CASE 403A−03 ISSUE J 

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HE<br>NOTES:<br>1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.<br>E 2. CONTROLLING DIMENSION: INCH.<br>3. DIMENSION b SHALL BE MEASURED WITHIN DIMENSION L1.<br>MILLIMETERS INCHES<br>DIM MIN NOM MAX MIN NOM MAX<br>Ss SS A 1.95 2.30 2.47 0.077 0.091 0.097<br>b D A1 0.05 0.10 0.20 0.002 0.004 0.008<br>b 1.96 2.03 2.20 0.077 0.080 0.087<br>c 0.15 0.23 0.31 0.006 0.009 0.012<br>D 3.30 3.56 3.95 0.130 0.140 0.156<br>E 4.06 4.32 4.60 0.160 0.170 0.181<br>I. POLARITY INDICATOROPTIONAL AS NEEDED H E 5.21 5.44 5.60 0.205 0.214 0.220<br>L 0.76 1.02 1.60 0.030 0.040 0.063<br>L1 0.51 REF 0.020 REF<br>A<br>ea a a<br>A1<br>ID L oa L1 c an<br>**----- End of picture text -----**<br>


## **SOLDERING FOOTPRINT*** 

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2.261<br>0.089<br>P|<br>: 2.743<br>0.108<br>{_<br>2.159<br>0.085 mm<br>SCALE 8:1<br>rs (4) inches<br>**----- End of picture text -----**<br>


*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 

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**MRS1504T3/D** 

**5**