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MRFX600HR5
RF FET Transistor, 179 V, 1.333 kW, 1.8 MHz, 400 MHz, NI-780H
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- Manufacturer: NXP
- Product type: RF FETs
- Channel Type: N Channel
- Power Dissipation: 1.333kW
- Transistor Mounting: Flange
- Transistor Case Style: NI-780H
| Delivery and price | |
|---|---|
| Units per pack | 1 |
| Price | 144.75 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
**NXP Semiconductors** Technical Data Document Number: MRFX600H Rev. 0, 09/2018 ## **RF Power LDMOS Transistors** High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs ## **MRFX600H MRFX600HS MRFX600GS** These high ruggedness devices are designed for use in high VSWR industrial, medical, broadcast, aerospace and mobile radio applications. Their **1.8–400 MHz, 600 W CW, 65 V** unmatched input and output design supports frequency use from 1.8 to **WIDEBAND** 400 MHz. **RF POWER LDMOS TRANSISTORS** ee **Typical Performance Frequency VDD Pout Gps** **D (MHz) Signal Type (V) (W) (dB) (%)** 87.5–108 **[(1,2)]** CW 62 680 CW 21.3 83.0 **NI--780H--4L** 230 **[(3)]** Pulse 65 600 Peak 26.4 74.4 **MRFX600H** (100 sec, 20% Duty Cycle) **Load Mismatch/Ruggedness Frequency Pin Test (MHz) Signal Type VSWR (W) Voltage Result NI--780S--4L** 230 **[(3)]** Pulse > 65:1 at all 2.5 Peak 65 No Device **MRFX600HS** (100 sec, 20% Phase Angles (3 dB Degradation Duty Cycle) Overdrive) ~~FEEEH~~ 1. Measured in 87.5–108 MHz broadband reference circuit (page 5). 2. The values shown are the center band performance numbers across the indicated frequency range. **NI--780GS--4L** 3. Measured in 230 MHz production test fixture (page 10). **MRFX600GS** ~~Se~~ **Features** Unmatched input and output allowing wide frequency range utilization - Output impedance fits a 4:1 transformer - Device can be used single--ended or in a push--pull configuration - Qualified up to a maximum of 65 VDD operation - Characterized from 30 to 65 V for extended power range - High breakdown voltage for enhanced reliability - Suitable for linear application with appropriate biasing - Integrated ESD protection with greater negative gate--source voltage range for improved Class C operation - Included in NXP product longevity program with assured supply for a minimum of 15 years after launch ## **Typical Applications** - Industrial, scientific, medical (ISM) **==> picture [155 x 127] intentionally omitted <==** **----- Start of picture text -----**<br> Gate A 3 1 Drain A<br>Gate B 4 2 Drain B<br>(Top View)<br>Note: The backside of the package is the<br>source terminal for the transistor.<br>Figure 1. Pin Connections<br>**----- End of picture text -----**<br> - Laser generation - Plasma generation - Particle accelerators - MRI, RF ablation and skin treatment - Industrial heating, welding and drying systems - Radio and VHF TV broadcast - Aerospace - HF communications - Radar - Mobile radio – HF and VHF communications – PMR base stations 2018 NXP B.V. **MRFX600H MRFX600HS MRFX600GS** RF Device Data ~~+~~ NXP Semiconductors 1 ~~NP~~ ## **Table 1. Maximum Ratings** |**Table 1. Maximum Ratings**|||| |---|---|---|---| |**Rating**|**Symbol**|**Value**|**Unit**| |Drain--Source Voltage|VDSS|–0.5, +179|Vdc| |Gate--Source Voltage|VGS|–6.0, +10|Vdc| |Storage Temperature Range|Tstg|–65 to +150|C| |Case Operating Temperature Range|TC|–40 to +150|C| |Operating Junction Temperature Range **(1,2)**|TJ|–40 to +225|C| |Total Device Dissipation @ TC= 25C<br>Derate above 25C|PD|1333<br>6.67|W<br>W/C| |**Table 2. Thermal Characteristics**|||| |**Characteristic**|**Symbol**|**Value (2,3)**|**Unit**| |Thermal Resistance, Junction to Case<br>CW: Case Temperature 75C, 650 W CW, 62 Vdc, IDQ(A+B)= 250 mA, 98 MHz|RJC|0.15|C/W| |Thermal Impedance, Junction to Case<br>Pulse: Case Temperature 73C, 600 W Peak, 100sec Pulse Width, 20% Duty Cycle,<br>65 Vdc, IDQ(A+B)= 100 mA, 230 MHz|ZJC|0.037|C/W| ## **Table 3. ESD Protection Characteristics** |**Table 3. ESD Protection Characteristics**|**Table 3. ESD Protection Characteristics**||||| |---|---|---|---|---|---| |**Test Methodology**|||**Class**||| |Human Body Model (per JS--001--2017)|||Class 2, passes 2500 V||| |Charge Device Model (per JS--002--2014)|||Class C3, passes 1000 V||| |**Table 4. Electrical Characteristics** (TA= 25C unless otherwise noted)|||||| |**Characteristic**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**| |**Off Characteristics (4)**|||||| |Gate--Source Leakage Current<br>(VGS= 5 Vdc, VDS= 0 Vdc)|IGSS|—|—|1|Adc| |Drain--Source Breakdown Voltage<br>(VGS= 0 Vdc, ID= 100 mAdc)|V(BR)DSS|179|193|—|Vdc| |Zero Gate Voltage Drain Leakage Current<br>(VDS= 65 Vdc, VGS= 0 Vdc)|IDSS|—|—|10|Adc| |Zero Gate Voltage Drain Leakage Current<br>(VDS= 179 Vdc, VGS= 0 Vdc)|IDSS|—|—|100|Adc| |**On Characteristics**|||||| |Gate Threshold Voltage **(4)**<br>(VDS= 10 Vdc, ID= 277Adc)|VGS(th)|2.1|2.5|2.9|Vdc| |Gate Quiescent Voltage<br>(VDD= 65 Vdc, ID= 100 mAdc, Measured in Functional Test)|VGS(Q)|2.7|2.9|3.2|Vdc| |Drain--Source On--Voltage **(4)**<br>(VGS= 10 Vdc, ID= 0.74 Adc)|VDS(on)|—|0.2|—|Vdc| |Forward Transconductance **(4)**<br>(VDS= 10 Vdc, ID= 32 Adc)|gfs|_—_|33.6|_—_|S| 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.nxp.com/RF/calculators. 3. Refer to AN1955 _, Thermal Measurement Methodology of RF Power Amplifiers._ Go to http://www.nxp.com/RF and search for AN1955. 4. Each side of device measured separately. (continued) **MRFX600H MRFX600HS MRFX600GS** RF Device Data NXP Semiconductors 2 **Table 4. Electrical Characteristics** (TA = 25C unless otherwise noted) **(continued)** |**Characteristic**|**Characteristic**|**Characteristic**|**Characteristic**|**Characteristic**|**Symbol**|**Min**|**Min**|**Typ**|**Typ**|**Max**|**Unit**| |---|---|---|---|---|---|---|---|---|---|---|---| |**Dynamic Characteristics (1)**|||||||||||| |Reverse Transfer Capacitance<br>(VDS= 65 Vdc30 mV(rms)ac @ 1 MHz, VGS= 0 Vdc)|||||Crss|—||1.1||—|pF| |Output Capacitance<br>(VDS= 65 Vdc30 mV(rms)ac @ 1 MHz, VGS= 0 Vdc)|||||Coss|—||84||—|pF| |Input Capacitance<br>(VDS= 65 Vdc, VGS= 0 Vdc30 mV(rms)ac @ 1 MHz)|||||Ciss|—||299||—|pF| |**Functional Tests (2)** (In NXP Production Test Fixture, 50 ohm system) VDD <br>(120 W Avg.), f = 230 MHz, 100sec Pulse Width, 20% Duty Cycle|||||= 65 Vdc, IDQ(A+B)= 100 mA, Pout= 600 W Peak||||||| |Power Gain|||||Gps|24.5||26.4||27.5|dB| |Drain Efficiency|||||D|71.0||74.4||—|%| |Input Return Loss|||||IRL|—||–23||–12|dB| |**Table 5. Load**|**Mismatch/Ruggedness** (In NXP Production Test Fixture, 50 ohm system) IDQ(A+B)= 100 mA||||||||||| |**Frequency**<br>**(MHz)**|**Signal Type**||**VSWR**|**Pin**<br>**(W)**||**Test**|**Voltage, VDD**|||**Result**|| |230|Pulse<br>(100sec, 20% Duty Cycle)||> 65:1 at all<br>Phase Angles|2.5 Peak<br>(3 dB Overdrive)|||65|||No Device Degradation|| |**Table 6. Ordering Information**|||||||||||| |**Device**|||**Tape and Reel Information**|||||||**Package**|| |MRFX600HR5||R5 Suffix = 50 Units, 56 mm Tape Width, 13--inch Reel|||||NI--780H--4L||||| |MRFX600HSR5||R5 Suffix = 50 Units, 32 mm Tape Width, 13--inch Reel|||||NI--780S--4L||||| |MRFX600GSR5|||||||NI--780GS--4L||||| 1. Each side of device measured separately. 2. Measurements made with device in straight lead configuration before any lead forming operation is applied. Lead forming is used for gull wing (GS) parts. **MRFX600H MRFX600HS MRFX600GS** RF Device Data NXP Semiconductors 3 ## **TYPICAL CHARACTERISTICS** **==> picture [241 x 188] intentionally omitted <==** **----- Start of picture text -----**<br> 1000<br>Measured with 30 mV(rms)ac @ 1 MHz<br>VGS = 0 Vdc Ciss<br>100 Coss<br>10<br>C rss<br>1<br>0 10 20 30 40 50 60 70<br>VDS, DRAIN--SOURCE VOLTAGE (VOLTS)<br>Note: Each side of device measured separately.<br>C, CAPACITANCE (pF)<br>**----- End of picture text -----**<br> **Figure 2. Capacitance versus Drain--Source Voltage** **==> picture [239 x 251] intentionally omitted <==** **----- Start of picture text -----**<br> 1.08<br>IDQ(A+B) = 100 mA VDD = 65 Vdc<br>1.06<br>250 mA<br>1.04<br>1.02<br>750 mA<br>1500 mA<br>1<br>0.98<br>0.96<br>0.94<br>0.92<br>–50 –25 0 25 50 75 100<br>TC, CASE TEMPERATURE (C)<br>IDQ (mA) Slope (mV/ C)<br>100 –3.20<br>250 –2.48<br>750 –2.16<br>1500 –1.36<br>GS(Q)<br>NORMALIZED V<br>**----- End of picture text -----**<br> **Figure 3. Normalized VGS versus Quiescent Current and Case Temperature** **MRFX600H MRFX600HS MRFX600GS** RF Device Data NXP Semiconductors 4 ## **87.5–108 MHz BROADBAND REFERENCE CIRCUIT – 2.9** **4.7** **(7.3 cm** **12.0 cm)** **Table 7. 87.5–108 MHz Broadband Performance** (In NXP Reference Circuit, 50 ohm system) IDQ(A+B) = 250 mA, Pin = 5 W, CW |**Frequency**<br>**(MHz)**|**VDD**<br>**(V)**|**Pout**<br>**(W)**|**Gps**<br>**(dB)**|**D**<br>**(%)**| |---|---|---|---|---| |87.5|62|705|21.5|80.0| |98|62|680|21.3|83.0| |108|62|650|21.2|82.5| **MRFX600H MRFX600HS MRFX600GS** RF Device Data NXP Semiconductors 5 ## **87.5–108 MHz BROADBAND REFERENCE CIRCUIT — 2.9** **4.7** **(7.3 cm** **12 cm)** **==> picture [356 x 234] intentionally omitted <==** **----- Start of picture text -----**<br> C16<br>C18<br>D111952<br>C17<br>C3 C7<br>C19<br>B1 C20 Coax1<br>C5 C21<br>R2 Coax3<br>C2<br>C9<br>R1<br>L2 C11<br>C12<br>L1 Q1<br>L4 C13<br>C15<br>T1 L3 C14<br>C10<br>C1<br>R3<br>C6<br>Coax2<br>C4 C8<br>Rev. 0<br>aaa-031570<br>**----- End of picture text -----**<br> **Figure 4. MRFX600H 87.5–108 MHz Broadband Reference Circuit Component Layout** **Table 8. MRFX600H 87.5–108 MHz Broadband Reference Circuit Component Designations and Values** |**Part**|**Description**|**Part Number**|**Manufacturer**| |---|---|---|---| |B1|Long Ferrite Bead|2743021447|Fair-Rite| |C1|30 pF Chip Capacitor|ATC100B300JT500XT|ATC| |C2, C5, C6, C9, C10, C11, C12,<br>C13, C14|1000 pF Chip Capacitor|ATC100B102JT50XT|ATC| |C3, C4|10,000 pF Chip Capacitor|ATC200B103KT50XT|ATC| |C7, C8|470 pF Chip Capacitor|ATC100B471JT200XT|ATC| |C15|1.0 pF Chip Capacitor|ATC100B1R0BT500XT|ATC| |C16|470F, 63 V Electrolytic Capacitor|MCGPR63V477M13X26|Multicomp| |C17, C18|10F Chip Capacitor|C5750X7S2A106M|TDK| |C19|470 nF Chip Capacitor|GRM31MR72A474KA35L|Murata| |C20|47 nF Chip Capacitor|GRM31MR72A473KA01L|Murata| |C21|15 nF Chip Capacitor|C3225CH2A153JT|TDK| |Coax1,2|35Flex Cable, 4.5Shield Length|HSF-141C-35|Hongsen Cable| |Coax3|50Flex Cable, 6.3Shield Length|SM141|Huber + Suhner| |L1|100 nH Inductor|1812SMS-R10JLC|Coilcraft| |L2, L3|8.0 nH, 3 Turn Inductor|A03TJLC|Coilcraft| |L4|5 Turn, #16 AWG, ID = 0.315Inductor|Handwound|NXP| |Q1|RF Power LDMOS Transistor|MRFX600H|NXP| |R1|10, 1/4 W Chip Resistor|CRCW120610R0JNEA|Vishay| |R2, R3|33, 2 W Chip Resistor|352133RFT|TE Connectivity| |T1|2–300 MHz, 3 Turns, 9:1 Impedance Ratio<br>Transformer|TUI-LF-9|Communication<br>Concepts| |PCB|Rogers RO4350B, 0.030,r= 3.66|D111952|MTL| ## **MRFX600H MRFX600HS MRFX600GS** RF Device Data NXP Semiconductors 6 ## **TYPICAL CHARACTERISTICS – 87.5–108 MHz BROADBAND REFERENCE CIRCUIT** **==> picture [277 x 173] intentionally omitted <==** **----- Start of picture text -----**<br> 25 90<br>D<br>24 85<br>23 80<br>22 Gps 75<br>21 70<br>20 800<br>19 P out 700<br>18 600<br>17 500<br>VDD = 62 Vdc, Pin = 5 W, lDQ(A+B) = 250 mA<br>16 400<br>87 89 91 93 95 97 99 101 103 105 107 109<br>f, FREQUENCY (MHz)<br>, DRAIN<br>D<br><br>EFFICIENCY (%)<br>, POWER GAIN (dB)<br>ps<br>G<br>, OUTPUT<br>out<br>P<br>POWER (WATTS)<br>**----- End of picture text -----**<br> **Figure 5. Power Gain, Drain Efficiency and CW Output Power versus Frequency at a Constant Input Power** **==> picture [237 x 175] intentionally omitted <==** **----- Start of picture text -----**<br> 800<br>VDD = 62 Vdc, IDQ(A+B) = 250 mA<br>f = 87.5 MHz<br>700<br>98 MHz<br>108 MHz<br>600<br>500<br>400<br>300<br>0 1 2 3 4 5 6 7<br>Pin, INPUT POWER (WATTS)<br>, OUTPUT POWER (WATTS)<br>out<br>P<br>**----- End of picture text -----**<br> **Figure 6. CW Output Power versus Input Power and Frequency** **==> picture [257 x 186] intentionally omitted <==** **----- Start of picture text -----**<br> 30 100<br>VDD = 62 Vdc, lDQ(A+B) = 250 mA<br>29 95<br>28 f = 87.5 MHz 90<br>27 85<br>26 80<br>25 D 98 MHz 75<br>108 MHz<br>24 70<br>Gps<br>23 98 MHz 65<br>22 108 MHz 60<br>87.5 MHz<br>21 55<br>20 50<br>300 350 400 450 500 550 600 650 700 750 800<br>Pout, OUTPUT POWER (WATTS)<br>, POWER GAIN (dB)<br>ps DRAIN EFFICIENCY (%)<br>G ,<br>D<br><br>**----- End of picture text -----**<br> **Figure 7. Power Gain and Drain Efficiency versus CW Output Power and Frequency** **MRFX600H MRFX600HS MRFX600GS** RF Device Data NXP Semiconductors 7 ## **87.5–108 MHz BROADBAND REFERENCE CIRCUIT** **==> picture [307 x 203] intentionally omitted <==** **----- Start of picture text -----**<br> f Zsource Zload<br>MHz <br>87.5 5.46 + j12.00 11.09 + j8.82<br>98 6.45 + j11.40 11.51 + j8.88<br>108 5.57 + j11.13 11.84 + j9.06<br>Zsource = Test circuit impedance as measured from<br>gate to gate, balanced configuration.<br>Zload = Test circuit impedance as measured<br>from drain to drain, balanced configuration.<br>Input Device Output<br>Matching + Under -- Matching<br>Network Test Network<br>50 50 <br>-- +<br>Zsource Zload<br>**----- End of picture text -----**<br> **Figure 8. Broadband Series Equivalent Source and Load Impedance – 87.5–108 MHz** **MRFX600H MRFX600HS MRFX600GS** RF Device Data NXP Semiconductors 8 ## **HARMONIC MEASUREMENTS — 87.5–108 MHz BROADBAND REFERENCE CIRCUIT** **==> picture [430 x 232] intentionally omitted <==** **----- Start of picture text -----**<br> Fundamental (F1)<br>F1 87.5 MHz<br>H2 175 MHz –27 dB<br>H3<br>H3 262.5 MHz –15 dB<br>H4 350 MHz –33 dB<br>H2 H3 H4<br>H2 (175 MHz) (262.5 MHz) (350 MHz)<br>H4 –27 dB –15 dB –33 dB<br>Center: 228.5 MHz 35 MHz Span: 350 MHz<br>Amplitude (10 dB per Division)<br>**----- End of picture text -----**<br> **Figure 9. 87.5 MHz Harmonics @ 675 W CW** **MRFX600H MRFX600HS MRFX600GS** RF Device Data NXP Semiconductors 9 ## **230 MHz PRODUCTION TEST FIXTURE — 4.0** **6.0** **(10.2 cm** **12.7 cm)** |**Figure 10. MRFX600H Production Test Fixture Component Layout — 230 MHz**<br>MRFX600H<br>Rev. 0<br>D105133<br>cut out<br>area<br>C25<br>C26<br>C27<br>C28<br>C22<br>C23<br>C21<br>C8<br>C7<br>C1<br>C2<br>C3<br>C4<br>C5<br>L1<br>R1<br>C13<br>C12<br>C11<br>C10<br>L2<br>C9<br>R2<br>C6<br>L3<br>C24<br>C16*<br>C17*<br>C15<br>C29<br>Coax3<br>Coax4<br>Coax1<br>Coax2<br><br>C14<br>C18*<br>C19*<br>L4<br>*C16, C17, C18 and C19 are mounted vertically.<br>_aaa-0_<br>**Table 9. MRFX600H Production Test Fixture Component Designations and Values — 230 MHz**|MRFX600H<br>Rev. 0<br>D105133<br>cut out<br>area<br>C25<br>C26<br>C27<br>C28<br>C22<br>C23<br>C21<br>C8<br>C7<br>C1<br>C2<br>C3<br>C4<br>C5<br>L1<br>R1<br>C13<br>C12<br>C11<br>C10<br>L2<br>C9<br>R2<br>C6<br>L3<br>C24<br>C16*<br>C17*<br>C15<br>C29<br>Coax3<br>Coax4<br>Coax1<br>Coax2<br><br>C14<br>C18*<br>C19*<br>L4|MRFX600H<br>Rev. 0<br>D105133<br>cut out<br>area<br>C25<br>C26<br>C27<br>C28<br>C22<br>C23<br>C21<br>C8<br>C7<br>C1<br>C2<br>C3<br>C4<br>C5<br>L1<br>R1<br>C13<br>C12<br>C11<br>C10<br>L2<br>C9<br>R2<br>C6<br>L3<br>C24<br>C16*<br>C17*<br>C15<br>C29<br>Coax3<br>Coax4<br>Coax1<br>Coax2<br><br>C14<br>C18*<br>C19*<br>L4|MRFX600H<br>Rev. 0<br>D105133<br>cut out<br>area<br>C25<br>C26<br>C27<br>C28<br>C22<br>C23<br>C21<br>C8<br>C7<br>C1<br>C2<br>C3<br>C4<br>C5<br>L1<br>R1<br>C13<br>C12<br>C11<br>C10<br>L2<br>C9<br>R2<br>C6<br>L3<br>C24<br>C16*<br>C17*<br>C15<br>C29<br>Coax3<br>Coax4<br>Coax1<br>Coax2<br><br>C14<br>C18*<br>C19*<br>L4|C20| |---|---|---|---|---| |||||| |**Part**||**Description**|**Part Number**|**Manufacturer**| |C1||13 pF Chip Capacitor|ATC100B130JT500XT|ATC| |C2, C3||27 pF Chip Capacitor|ATC100B270JT500XT|ATC| |C4||0.8–8.0 pF Variable Capacitor|27291SL|Johanson<br>Components| |C5||33 pF Chip Capacitor|ATC100B330JT500XT|ATC| |C6, C10||22F, 35 V Tantalum Capacitor|T491X226K035AT|Kemet| |C7, C11||0.1F Chip Capacitor|CDR33BX104AKWS|AVX| |C8, C12||220 nF Chip Capacitor|C1812C224K5RACTU|Kemet| |C9, C13, C21, C25||1000 pF Chip Capacitor|ATC100B102JT50XT|ATC| |C14, C29||39 pF Chip Capacitor|ATC100B390JT500XT|ATC| |C15||43 pF Chip Capacitor|ATC100B430JT500XT|ATC| |C16, C17, C18, C19||240 pF Chip Capacitor|ATC100B241JT200XT|ATC| |C20||9.1 pF Chip Capacitor|ATC100B9R1BT500XT|ATC| |C22, C23, C24, C26, C27, C28||470F, 100 V Electrolytic Capacitor|MCGPR100V477M16X32|Multicomp| |Coax1, 2, 3, 4||25Semi-rigid Coax, 2.2Shield Length|UT-141C-25|Micro-Coax| |L1, L2||5 nH Inductor|A02TKLC|Coilcraft| |L3, L4||6.6 nH Inductor|GA3093-ALC|Coilcraft| |R1, R2||10, 1/4 W Chip Resistor|CRCW120610R0JNEA|Vishay| |PCB||Rogers AD255C, 0.030,r = 2.55, 1 oz. Copper|D105133|MTL| **MRFX600H MRFX600HS MRFX600GS** RF Device Data NXP Semiconductors 10 ## **TYPICAL CHARACTERISTICS — 230 MHz, TC = 25** _ **C PRODUCTION TEST FIXTURE** **==> picture [369 x 430] intentionally omitted <==** **----- Start of picture text -----**<br> 700<br>VDD = 65 Vdc, f = 230 MHz<br>600 Pulse Width = 100 sec, 20% Duty Cycle<br>500 Pin = 1.4 W<br>400<br>300<br>200 Pin = 0.7 W<br>100<br>0<br>0 0.5 1.0 1.5 2.0 2.5 3.0 3.5<br>VGS, GATE--SOURCE VOLTAGE (VOLTS)<br>Figure 11. Output Power versus Gate--Source<br>Voltage at a Constant Input Power<br>60 30<br>VDD = 65 Vdc, IDQ(A+B) = 100 mA, f = 230 MHz VDDDD = 65 Vdc, f = 230 MHz, Pulse Width = 100 sec, 20% Duty Cycle<br>Pulse Width = 100 sec, 20% Duty Cycle 28<br>56<br>26 IDQ(A+B) = 400 mADQ(A+B) = 400 mA = 400 mA<br>300 mA<br>52 24<br>22 200 mA<br>48 100 mA<br>20<br>44 18<br>16<br>40<br>14<br>100 mA<br>36 12<br>15 18 21 24 27 30 33 36 10<br>Pin, INPUT POWER (dBm) PEAK Poutout, OUTPUT POWER (WATTS) PEAK<br>f P1dB P3dB<br>(MHz) (W) (W)<br>230 610 677<br>, OUTPUT POWER (WATTS) PEAK<br>out<br>P<br>, POWER GAIN (dB)<br>ps<br>G<br>, OUTPUT POWER (dBm) PEAK<br>out<br>P<br>**----- End of picture text -----**<br> **==> picture [254 x 175] intentionally omitted <==** **----- Start of picture text -----**<br> 30 90<br>VDDDD = 65 Vdc, f = 230 MHz, Pulse Width = 100 sec, 20% Duty Cycle<br>28 80<br>26 IDQ(A+B) = 400 mADQ(A+B) = 400 mA = 400 mA 70<br>300 mA Gps<br>24 60<br>22 200 mA 50<br>100 mA D<br>20 40<br>18 30<br>16 400 mA 20<br>300 mA<br>14 200 mA 10<br>100 mA<br>12 0<br>10 100 1000<br>Poutout, OUTPUT POWER (WATTS) PEAK<br>, POWER GAIN (dB)<br>ps DRAIN EFFICIENCY (%)<br>G D,<br><br>**----- End of picture text -----**<br> **Figure 13. Power Gain and Drain Efficiency versus Output Power and Quiescent Current** **Figure 12. Output Power versus Input Power** **==> picture [501 x 175] intentionally omitted <==** **----- Start of picture text -----**<br> 32 80 30<br>VDD = 65 Vdc, IDQ(A+B) = 100 mA, f = 230 MHz –40 _ C<br>30 Pulse Width = 100 sec, 20% Duty Cycle 25 _ C 70 28<br>85 _ C<br>28 60 26<br>26 50 24<br>24 Gps 40 22 65 V<br>60 V<br>55 V<br>22 T C = –40 _ C D 30 20 50 V<br>20 25 _ C 20 18<br>40 V<br>85 _ C<br>18 10 16 IDQ(A+B) = 100 mA, f = 230 MHz<br>VDD = 30 V Pulse Width = 100 sec, 20% Duty Cycle<br>16 0 14<br>1 10 100 1000 0 100 200 300 400 500 600 700 800<br>Pout, OUTPUT POWER (WATTS) PEAK Pout, OUTPUT POWER (WATTS) PEAK<br>, POWER GAIN (dB) , POWER GAIN (dB)<br>Gps DRAIN EFFICIENCY (%)D, Gps<br><br>**----- End of picture text -----**<br> **Figure 14. Power Gain and Drain Efficiency versus Output Power** **Figure 15. Power Gain versus Output Power and Drain--Source Voltage** **MRFX600H MRFX600HS MRFX600GS** RF Device Data NXP Semiconductors 11 ## **230 MHz PRODUCTION TEST FIXTURE** **==> picture [308 x 171] intentionally omitted <==** **----- Start of picture text -----**<br> f Zsource Zload<br>MHz <br>230 1.5 + j4.9 5.0 + j7.1<br>Zsource = Test fixture impedance as measured from<br>gate to gate, balanced configuration.<br>Zload = Test fixture impedance as measured from<br>drain to drain, balanced configuration.<br>Input Device Output<br>Matching + Under -- Matching<br>50 Network Test Network 50 <br>-- +<br>Zsource Zload<br>**----- End of picture text -----**<br> **Figure 16. Series Equivalent Source and Load Impedance – 230 MHz** **MRFX600H MRFX600HS MRFX600GS** RF Device Data NXP Semiconductors 12 ## **PACKAGE DIMENSIONS** **==> picture [82 x 56] intentionally omitted <==** **MRFX600H MRFX600HS MRFX600GS** RF Device Data NXP Semiconductors 13 **==> picture [502 x 233] intentionally omitted <==** **MRFX600H MRFX600HS MRFX600GS** RF Device Data NXP Semiconductors 14 **MRFX600H MRFX600HS MRFX600GS** RF Device Data NXP Semiconductors 15 **==> picture [502 x 232] intentionally omitted <==** **MRFX600H MRFX600HS MRFX600GS** RF Device Data NXP Semiconductors 16 **MRFX600H MRFX600HS MRFX600GS** RF Device Data NXP Semiconductors 17 **==> picture [502 x 275] intentionally omitted <==** **MRFX600H MRFX600HS MRFX600GS** RF Device Data NXP Semiconductors 18 ## **PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS** Refer to the following resources to aid your design process. ## **Application Notes** - AN1908: Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages - AN1955: Thermal Measurement Methodology of RF Power Amplifiers ## **Engineering Bulletins** - EB212: Using Data Sheet Impedances for RF LDMOS Devices ## **Software** - Electromigration MTTF Calculator - RF High Power Model - .s2p File ## **Development Tools** - Printed Circuit Boards ## **To Download Resources Specific to a Given Part Number:** 1. Go to http://www.nxp.com/RF 2. Search by part number 3. Click part number link 4. Choose the desired resource from the drop down menu ## **REVISION HISTORY** The following table summarizes revisions to this document. |**Revision**|**Date**|**Description**| |---|---|---| |0|Sept. 2018|<br>Initial release of data sheet| **MRFX600H MRFX600HS MRFX600GS** RF Device Data NXP Semiconductors 19 ## _**How to Reach Us:**_ **Home Page:** nxp.com **Web Support:** nxp.com/support Information in this document is provided solely to enable system and software implementers to use NXP products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits based on the information in this document. NXP reserves the right to make changes without further notice to any products herein. NXP makes no warranty, representation, or guarantee regarding the suitability of its products for any particular purpose, nor does NXP assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters that may be provided in NXP data sheets and/or specifications can and do vary in different applications, and actual performance may vary over time. All operating parameters, including “typicals,” must be validated for each customer application by customer’s technical experts. NXP does not convey any license under its patent rights nor the rights of others. NXP sells products pursuant to standard terms and conditions of sale, which can be found at the following address: nxp.com/SalesTermsandConditions. NXP and the NXP logo are trademarks of NXP B.V. All other product or service names are the property of their respective owners. E 2018 NXP B.V. **MRFX600H MRFX600HS MRFX600GS** RF Device Data NXP Semiconductors Document Number: MRFX600H 20Rev. 0, 09/2018
Updated at February 9, 2023
NXP Semiconductors is a global leader in secure connectivity solutions, driving innovation across the automotive, industrial, IoT, mobile, and communications infrastructure markets. By developing advanced, purpose-built technologies, NXP enables devices to sense, think, connect, and act intelligently, delivering rigorously tested components that make the connected world safer and more efficient. Within the semiconductor space, NXP is highly regarded for its extensive range of high-performance integrated circuits and discrete devices. The brand's portfolio excels in drivers and interfaces, featuring a comprehensive selection of I/O expanders designed to streamline complex system architectures. For demanding high-frequency and wireless applications, NXP provides industry-leading RF FETs and RF/PIN diodes engineered to deliver exceptional signal integrity, efficiency, and reliability. The NXP product lineup further extends to essential discrete components, including versatile bipolar transistors, JFETs, and small signal diodes optimized for precision switching and amplification. Additionally, the portfolio supports advanced automation and smart applications with precision IC sensors, such as MEMS accelerometers, alongside specialized power management solutions like AC/DC LED driver ICs and single MOSFETs for cutting-edge electronics design.
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