MRFX1K80GNR5

RF FET Transistor, 179 V, 3.333 kW, 1.8 MHz, 400 MHz, OM-1230G

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Manufacturer: NXP
Product type: RF FETs
Drain Source Voltage Vds:179V; Continuous Drain Current Id:-; Power Dissipation Pd:3.333kW; Operating Frequency Min:1.8MHz; Operating Frequency Max:400MHz; RF Transistor Case:OM-1230G;
MSL: MSL 3 - 168 hours
SVHC: No SVHC (27-Jun-2024)
No. of Pins: 4Pins
Channel Type: N Channel
Product Range: -
Power Dissipation: 3.333kW
Transistor Mounting: Surface Mount
Transistor Case Style: OM-1230G
Operating Frequency Max: 400MHz
Operating Frequency Min: 1.8MHz
Drain Source Voltage Vds: 179V
Operating Temperature Max: 225°C
Continuous Drain Current Id: -

Delivery and price
Units per pack	50
Price	184.16 €
Current stock	10+
Lead time	30 days

Datasheet

**NXP Semiconductors** Technical Data 

Document Number: MRFX1K80N Rev. 0, 04/2018 

## **RF Power LDMOS Transistors** High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs 

## **MRFX1K80N MRFX1K80GN** 

These high ruggedness devices are designed for use in high VSWR industrial, medical, broadcast, aerospace and mobile radio applications. Their unmatched input and output design supports frequency use from 1.8 to 400 MHz. 

**1.8–400 MHz, 1800 W CW, 65 V WIDEBAND RF POWER LDMOS TRANSISTORS** 

**Typical Performance Frequency VDD Pout Gps**  **D (MHz) Signal Type (V) (W) (dB) (%)** 87.5–108 **[(1,2)]** CW 60 1670 CW 23.8 83.5 230 **[(3)]** Pulse 65 1800 Peak 24.4 75.7 (100 sec, 20% Duty Cycle) ~~ae~~ **Load Mismatch/Ruggedness Frequency Pin Test (MHz) Signal Type VSWR (W) Voltage Result** 230 **[(3)]** Pulse > 65:1 at all 14 W Peak 65 No Device (100 sec, 20% Phase Angles (3 dB Degradation Duty Cycle) Overdrive) 1. Measured in 87.5–108 MHz broadband reference circuit (page 5). ~~=SEEEE|~~ 2. The values shown are the center band performance numbers across the indicated frequency range. 3. Measured in 230 MHz narrowband production test fixture (page 11). 

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OM--1230--4L<br>PLASTIC<br>MRFX1K80N<br>OM--1230G--4L<br>PLASTIC<br>MRFX1K80GN<br>**----- End of picture text -----**<br>


## **Features** 

- Unmatched input and output allowing wide frequency range utilization 

- Device can be used single--ended or in a push--pull configuration 

- Qualified up to a maximum of 65 VDD operation 

- Characterized from 30 to 65 V for extended power range 

- Lower thermal resistance package 

- High breakdown voltage for enhanced reliability 

- Suitable for linear application with appropriate biasing 

- Integrated ESD protection with greater negative gate--source voltage range for improved Class C operation 

- Included in NXP product longevity program with assured supply for a minimum of 15 years after launch 

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Gate A 3 1 Drain A<br>Gate B 4 2 Drain B<br>(Top View)<br>**----- End of picture text -----**<br>


Note: Exposed backside of the package is the source terminal for the transistor. 

**Figure 1. Pin Connections** 

## **Typical Applications** 

- Industrial, scientific, medical (ISM) 

   - Laser generation 

   - Plasma generation 

   - Particle accelerators 

   - MRI, RF ablation and skin treatment 

   - Industrial heating, welding and drying systems 

- Radio and VHF TV broadcast 

- Aerospace 

   - HF communications 

   - Radar 

 2018 NXP B.V. **MRFX1K80N MRFX1K80GN** RF Device Data ~~__—!"!"!"—~~ NXP Semiconductors 1 ~~N P~~ 

## **Table 1. Maximum Ratings** 

|**Table 1. Maximum Ratings**|**Table 1. Maximum Ratings**|**Table 1. Maximum Ratings**||||||
|---|---|---|---|---|---|---|---|
|**Rating**|||**Symbol**||**Value**||**Unit**|
|Drain--Source Voltage|||VDSS||–0.5, +179||Vdc|
|Gate--Source Voltage|||VGS||–6.0, +10||Vdc|
|Storage Temperature Range|||Tstg||–65 to +150||C|
|Case Operating Temperature Range|||TC||–40 to +150||C|
|Operating Junction Temperature Range **(1,2)**|||TJ||–40 to +225||C|
|Total Device Dissipation @ TC= 25C<br>Derate above 25C|||PD||3333<br>16.7||W<br>W/C|
|**Table 2. Thermal Characteristics**||||||||
|**Characteristic**|||**Symbol**||**Value (2,3)**||**Unit**|
|Thermal Resistance, Junction to Case<br>CW: Case Temperature 112C, 1800 W CW, 65 Vdc, IDQ(A+B)= 150 mA, 98 MHz|||RJC||0.06||C/W|
|Thermal Impedance, Junction to Case<br>Pulse: Case Temperature 77C, 1800 W Peak, 100sec Pulse Width, 20% Duty Cycle,<br>65 Vdc, IDQ(A+B)= 100 mA, 230 MHz|||ZJC||0.009||C/W|
|**Table 3. ESD Protection Characteristics**||||||||
|**Test Methodology**|||||**Class**|||
|Human Body Model (per JESD22--A114)|||||2, passes 2500 V|||
|Charge Device Model (per JESD22--C101)|||C3, passes 1200 V|||||
|**Table 4. Moisture Sensitivity Level**||||||||
|**Test Methodology**|**Rating**|**Package Peak Temperature**|||||**Unit**|
|Per JESD22--A113, IPC/JEDEC J--STD--020|3|||260|||C|
|**Table 5. Electrical Characteristics** (TA= 25C unless otherwise noted)||||||||
|**Characteristic**|**Symbol**|**Min**||**Typ**||**Max**|**Unit**|
|**Off Characteristics (4)**||||||||
|Gate--Source Leakage Current<br>(VGS= 5 Vdc, VDS= 0 Vdc)|IGSS|—||—||1|Adc|
|Drain--Source Breakdown Voltage<br>(VGS= 0 Vdc, ID= 100 mAdc)|V(BR)DSS|179||193||—|Vdc|
|Zero Gate Voltage Drain Leakage Current<br>(VDS= 65 Vdc, VGS= 0 Vdc)|IDSS|—||—||10|Adc|
|Zero Gate Voltage Drain Leakage Current<br>(VDS= 179 Vdc, VGS= 0 Vdc)|IDSS|—||—||100|mAdc|
|**On Characteristics**||||||||
|Gate Threshold Voltage **(4)**<br>(VDS= 10 Vdc, ID= 740Adc)|VGS(th)|2.1||2.5||2.9|Vdc|
|Gate Quiescent Voltage<br>(VDD= 65 Vdc, IDQ(A+B)= 100 mAdc, Measured in Functional Test)|VGS(Q)|2.5||2.9||3.3|Vdc|
|Drain--Source On--Voltage **(4)**<br>(VGS= 10 Vdc, ID= 2.76 Adc)|VDS(on)|—||0.21||—|Vdc|
|Forward Transconductance **(4)**<br>(VDS= 10 Vdc, ID= 43 Adc)|gfs|_—_||44.7||_—_|S|



1. Continuous use at maximum temperature will affect MTTF. 

2. MTTF calculator available at http://www.nxp.com/RF/calculators. 

3. Refer to AN1955 _, Thermal Measurement Methodology of RF Power Amplifiers._ Go to http://www.nxp.com/RF and search for AN1955. 

4. Each side of device measured separately. 

(continued) 

**MRFX1K80N MRFX1K80GN** 

RF Device Data NXP Semiconductors 

2 

**Table 5. Electrical Characteristics** (TA = 25C unless otherwise noted) **(continued)** 

|**Characteristic**|**Characteristic**|**Characteristic**|**Characteristic**|**Characteristic**|**Symbol**|**Min**|**Min**|**Typ**|**Typ**|**Max**|**Unit**|
|---|---|---|---|---|---|---|---|---|---|---|---|
|**Dynamic Characteristics (1)**||||||||||||
|Reverse Transfer Capacitance<br>(VDS= 65 Vdc30 mV(rms)ac @ 1 MHz, VGS= 0 Vdc)|||||Crss|—||5.6||—|pF|
|Output Capacitance<br>(VDS= 65 Vdc30 mV(rms)ac @ 1 MHz, VGS= 0 Vdc)|||||Coss|—||216||—|pF|
|Input Capacitance<br>(VDS= 65 Vdc, VGS= 0 Vdc30 mV(rms)ac @ 1 MHz)|||||Ciss|—||765||—|pF|
|**Functional Tests**(In NXP Narrowband Production Test Fixture, 50 ohm system) VDD= 65 Vdc, IDQ(A+B)= 100 mA, Pout= 1800 W Peak<br>(360 W Avg.), f = 230 MHz, 100sec Pulse Width, 20% Duty Cycle||||||||||||
|Power Gain|||||Gps|23.0||24.4||26.0|dB|
|Drain Efficiency|||||D|71.0||75.7||—|%|
|Input Return Loss|||||IRL|—||–16||–9|dB|
|**Table 6. Load**|**Mismatch/Ruggedness** (In NXP Narrowband Production Test Fixture, 50 ohm system) IDQ(A+B)= 100 mA|||||||||||
|**Frequency**<br>**(MHz)**|**Signal Type**||**VSWR**|**Pin**<br>**(W)**||**Test**|**Voltage, VDD**||**Result**|||
|230|Pulse<br>(100sec, 20% Duty Cycle)||> 65:1 at all<br>Phase Angles|14 W Peak<br>(3 dB Overdrive)|||65||No Device Degradation|||
|**Table 7. Ordering Information**||||||||||||
|**Device**|||**Tape and Reel Information**||||||**Package**|||
|MRFX1K80NR5||R5 Suffix|= 50 Units, 56 mm Tape Width, 13--Reel||||OM--1230--4L|||||
|MRFX1K80GNR5|||||||OM--1230G--4L|||||



1. Each side of device measured separately. 

**MRFX1K80N MRFX1K80GN** 

RF Device Data NXP Semiconductors 

3 

## **TYPICAL CHARACTERISTICS** 

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2000<br>1000<br>Ciss<br>Coss<br>100<br>10<br>C rss<br>Measured with 30 mV(rms)ac @ 1 MHz<br>VGS = 0 Vdc<br>1<br>0 10 20 30 40 50 60 70<br>VDS, DRAIN--SOURCE VOLTAGE (VOLTS)<br>C, CAPACITANCE (pF)<br>**----- End of picture text -----**<br>


**Note:** Each side of device measured separately. 

**Figure 2. Capacitance versus Drain--Source Voltage** 

**==> picture [239 x 251] intentionally omitted <==**

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1.08<br>500 mA VDD = 65 Vdc<br>1.06<br>IDQ(A+B) = 100 mA<br>1.04<br>100 0  mA<br>1.02 1500 mA<br>1<br>0.98<br>0.96<br>0.94<br>0.92<br>–50 –25 0 25 50 75 100<br>TC, CASE TEMPERATURE (C)<br>IDQ (mA) Slope (mV/  C)<br>100 –3.14<br>500 –2.88<br>1000 –2.75<br>1500 –2.65<br>GS(Q)<br>NORMALIZED V<br>**----- End of picture text -----**<br>


**Figure 3. Normalized VGS versus Quiescent Current and Case Temperature** 

**MRFX1K80N MRFX1K80GN** 

RF Device Data NXP Semiconductors 

4 

## **87.5–108 MHz BROADBAND REFERENCE CIRCUIT – 2.9**  **5.1**  **(7.3 cm**  **13.0 cm)** 

**Table 8. 87.5–108 MHz Broadband Performance** (In NXP Reference Circuit, 50 ohm system) IDQ(A+B) = 200 mA, Pin = 7 W, CW 

|**Frequency**<br>**(MHz)**|**VDD**<br>**(V)**|**Pout**<br>**(W)**|**Gps**<br>**(dB)**|**D**<br>**(%)**|
|---|---|---|---|---|
|87.5|60|1580|23.5|84.6|
|98|60|1670|23.8|83.5|
|108|60|1600|23.6|80.6|



**MRFX1K80N MRFX1K80GN** 

RF Device Data NXP Semiconductors 

5 

## **87.5–108 MHz BROADBAND REFERENCE CIRCUIT – 2.9**  **5.1**  **(7.3 cm**  **13.0 cm)** 

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D94850 C22 C21<br>C28 C6 C7 C25 C26 C27<br>C5<br>L4<br>R2<br>L1 C20<br>L3 C19<br>C18<br>C4 C11<br>C17<br>C16<br>C3 R1 Q1<br>C1 C24<br>C2 C23*<br>L2 C15*<br>R3<br>C14<br>C8<br>MRFE6VP61K25N<br>C9 C10<br>MRF1K50N<br>MRFX1K80N Rev. 0<br>*C15 and C23 are mounted vertically.<br>Note: Component numbers C12 and C13 are not used.<br>0.34<br>(9)<br>0.45<br>(11)<br>0.22<br>(6) Inches<br>L3 total wire length = 1.7 (43 mm) (mm)<br>**----- End of picture text -----**<br>


**Figure 4. MRFX1K80N 87.5–108 MHz Broadband Reference Circuit Component Layout** 

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**Figure 5. MRFX1K80N 87.5–108 MHz Broadband Reference Circuit Component Layout – Bottom** 

**MRFX1K80N MRFX1K80GN** 

RF Device Data NXP Semiconductors 

6 

**Table 9. MRFX1K80N 87.5–108 MHz Broadband Reference Circuit Component Designations and Values** 

|**Part**|**Description**|**Part Number**|**Manufacturer**|
|---|---|---|---|
|C1, C3, C6, C9, C18, C19,<br>C20, C21, C22|1000 pF Chip Capacitor|ATC100B102JT50XT|ATC|
|C2|33 pF Chip Capacitor|ATC100B330JT500XT|ATC|
|C4, C5, C8|10,000 pF Chip Capacitor|ATC200B103KT50XT|ATC|
|C7, C10, C15, C16, C17, C23|470 pF Chip Capacitor|ATC100B471JT200XT|ATC|
|C11|100 pF, 300 V Mica Capacitor|MIN02-002EC101J-F|CDE|
|C14, C24|12 pF Chip Capacitor|ATC100B120GT500XT|ATC|
|C25, C26, C27|220F, 100 V Electrolytic Capacitor|EEV-FC2A221M|Panasonic--ECG|
|C28|22F, 35 V Electrolytic Capacitor|UUD1V220MCL1GS|Nichicon|
|L1, L2|17.5 nH Inductor, 6 Turns|B06TJLC|Coilcraft|
|L3|1.5 mm Non--Tarnish Silver Plated Copper Wire,<br>Total Wire Length = 1.7/43 mm|SP1500NT-001|Scientific Wire Company|
|L4|22 nH Inductor|1212VS-22NMEB|Coilcraft|
|Q1|RF Power LDMOS Transistor|MRFX1K80N|NXP|
|R1|10, 1/4 W Chip Resistor|CRCW120610R0JNEA|Vishay|
|R2, R3|33, 2 W Chip Resistor|1-2176070-3|TE Connectivity|
|Thermal Pad|TG Series Soft Thermal Conductive Pad|TG6050-150-150-5.0-0|t-Global Technology|
|PCB|Rogers TC350 0.030,r= 3.5|D94850|MTL|



Note: Refer to MRFX1K80N’s printed circuit boards and schematics to download the 87.5–108 MHz baseplate drawing. 

**MRFX1K80N MRFX1K80GN** 

RF Device Data NXP Semiconductors 

7 

## **TYPICAL CHARACTERISTICS – 87.5–108 MHz BROADBAND REFERENCE CIRCUIT** 

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27 90<br>26  D 85<br>25 80<br>24 G ps 75<br>23 70<br>22 Pout 1700<br>21 1600<br>20 1500<br>19 1400<br>VDD = 60 Vdc, Pin = 7 W, lDQ(A+B) = 200 mA<br>18 1300<br>87 89 91 93 95 97 99 101 103 105 107 109<br>f, FREQUENCY (MHz)<br>, DRAIN<br>D<br><br>EFFICIENCY (%)<br>, POWER GAIN (dB)<br>ps<br>G<br>, OUTPUT<br>out<br>P<br>POWER (WATTS)<br>**----- End of picture text -----**<br>


**Figure 6. Power Gain, Drain Efficiency and CW Output Power versus Frequency at a Constant Input Power** 

**==> picture [242 x 175] intentionally omitted <==**

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1800<br>98 MHz<br>1600<br>1400<br>108 MHz<br>1200 87.5 MHz<br>1000<br>800<br>600<br>400<br>200<br>VDD = 60 Vdc, IDQ(A+B) = 200 mA<br>0<br>0 2 4 6 8 10 12<br>Pin, INPUT POWER (WATTS)<br>, OUTPUT POWER (WATTS)<br>out<br>P<br>**----- End of picture text -----**<br>


**Figure 7. CW Output Power versus Input Power and Frequency** 

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34 90<br>32 f = 87.5 MHz  D 80<br>30 98 MHz 70<br>108 MHz<br>28 60<br>Gps<br>26 50<br>87.5 MHz<br>24 98 MHz 40<br>108 MHz<br>22 30<br>VDD = 60 Vdc, lDQ(A+B) = 200 mA<br>20 20<br>0 200 400 600 800 1000 1200 1400 1600 1800<br>Pout, OUTPUT POWER (WATTS)<br>, POWER GAIN (dB)<br>ps DRAIN EFFICIENCY (%)<br>G ,<br>D<br><br>**----- End of picture text -----**<br>


**Figure 8. Power Gain and Drain Efficiency versus CW Output Power and Frequency** 

**MRFX1K80N MRFX1K80GN** 

RF Device Data NXP Semiconductors 

8 

## **87.5–108 MHz BROADBAND REFERENCE CIRCUIT** 

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35 p> % ore Zo = 5 —  <br>LYS EK XS SSA<br>LIAy {KES~ w OX oO)OAR' ie | i<br>PY [EXXSSAAT<br>MRRD> f = 87.5 MHz Seceneee I<br>LEO 1. BSS f = 108 MHz f = 87.5 MHz<br>£ f = 108 MHz<br>, Ly vy LyLY Zs{> <x o®<br>g]s ff SOLEIL Zsource KD Zload SS<br>BT ef BelETIREEL XL SOROS<br>Slol LF ShedPETERRL DOS RS<br>| EE SERRE LIT ADORE ILS<br>A See TTR I LR<br>|, ey seeeaieeerPELE ET ALPERO<br>[el had Sites LT PDE | TAC OAL SOS<br>| Ptcatnera AL<br>HEHE PP EE AT<br>CREE EEE Ty een LTT PIT PI im<br>| EEREGPSS HEEEarTEEee Tat pat tatSerentabie [at ttt+Hs<br>11] FECEEEEHAH eesistance component(B.),ox Consuctance componenr( $-) |i tit<br>f Zsource Zload<br>MHz  <br>87.5 1.65 + j3.30 3.90 + j4.73<br>98 1.91 + j3.25 3.88 + j3.99<br>108 1.94 + j2.87 3.35 + j3.95<br>Zsource = Test circuit impedance as measured from<br>gate to gate, balanced configuration.<br>Zload = Test circuit impedance as measured<br>from drain to drain, balanced configuration.<br>Input Device Output<br>Matching + Under -- Matching<br>Network Test Network<br>50  50 <br>-- +<br>Zsource Zload<br>**----- End of picture text -----**<br>


**Figure 9. Broadband Series Equivalent Source and Load Impedance – 87.5–108 MHz** 

**MRFX1K80N MRFX1K80GN** 

RF Device Data NXP Semiconductors 

9 

## **HARMONIC MEASUREMENTS — 87.5–108 MHz BROADBAND REFERENCE CIRCUIT** 

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**----- Start of picture text -----**<br>
F1 87.5 MHz<br>Fundamental (F1) H2 175 MHz –31 dB<br>H3 262.5 MHz –29 dB<br>H4 350 MHz –53 dB<br>H2 H3 H4<br>(175 MHz) (262.5 MHz) (350 MHz)<br>–31 dB –29 dB –53 dB<br>H3<br>H2<br>H4<br>Center: 228.5 MHz 35 MHz Span: 350 MHz<br>Amplitude (10 dB per Division)<br>**----- End of picture text -----**<br>


**Figure 10. 87.5 MHz Harmonics @ 1500 W CW** 

**MRFX1K80N MRFX1K80GN** 

RF Device Data NXP Semiconductors 

10 

## **230 MHz NARROWBAND PRODUCTION TEST FIXTURE – 6.0**  **4.0**  **(15.2 cm**  **10.2 cm)** 

|_aaa--029942_<br>D96894<br>MRFX1K80N<br>Rev. 0<br>Coax1<br>Coax2<br>Coax3<br>Coax4<br>L3<br>C25<br>C29<br>C30<br>C31<br>C26<br>C27<br>C28<br>C24<br>L1<br>C4*<br>C2<br>C1<br>C5<br>C7 C8<br>R2<br>C 11<br>C6<br>C9C10<br>R1<br>C12<br>C3<br>L2<br>C23<br>C13 C14<br>C20*<br>C21*<br>C22*<br>C17*<br>C18*<br>C19*<br>C15 C16<br>L4<br>CUT OUT AREA<br>*C4, C17, C18, C19, C20, C21 and C22 are mounted vertically.<br>**Figure 11. MRFX1K80N Narrowband Production Test Fixture Component Layout – 230 MHz**<br>**Table 10. MRFX1K80N Narrowband Production Test Fixture Component Designations and Values – 230 MHz**|_aaa--029942_<br>D96894<br>MRFX1K80N<br>Rev. 0<br>Coax1<br>Coax2<br>Coax3<br>Coax4<br>L3<br>C25<br>C29<br>C30<br>C31<br>C26<br>C27<br>C28<br>C24<br>L1<br>C4*<br>C2<br>C1<br>C5<br>C7 C8<br>R2<br>C 11<br>C6<br>C9C10<br>R1<br>C12<br>C3<br>L2<br>C23<br>C13 C14<br>C20*<br>C21*<br>C22*<br>C17*<br>C18*<br>C19*<br>C15 C16<br>L4<br>CUT OUT AREA<br>*C4, C17, C18, C19, C20, C21 and C22 are mounted vertically.<br>**Figure 11. MRFX1K80N Narrowband Production Test Fixture Component Layout – 230 MHz**<br>**Table 10. MRFX1K80N Narrowband Production Test Fixture Component Designations and Values – 230 MHz**|_aaa--029942_<br>D96894<br>MRFX1K80N<br>Rev. 0<br>Coax1<br>Coax2<br>Coax3<br>Coax4<br>L3<br>C25<br>C29<br>C30<br>C31<br>C26<br>C27<br>C28<br>C24<br>L1<br>C4*<br>C2<br>C1<br>C5<br>C7 C8<br>R2<br>C 11<br>C6<br>C9C10<br>R1<br>C12<br>C3<br>L2<br>C23<br>C13 C14<br>C20*<br>C21*<br>C22*<br>C17*<br>C18*<br>C19*<br>C15 C16<br>L4<br>CUT OUT AREA<br>*C4, C17, C18, C19, C20, C21 and C22 are mounted vertically.<br>**Figure 11. MRFX1K80N Narrowband Production Test Fixture Component Layout – 230 MHz**<br>**Table 10. MRFX1K80N Narrowband Production Test Fixture Component Designations and Values – 230 MHz**|_aaa--029942_<br>D96894<br>MRFX1K80N<br>Rev. 0<br>Coax1<br>Coax2<br>Coax3<br>Coax4<br>L3<br>C25<br>C29<br>C30<br>C31<br>C26<br>C27<br>C28<br>C24<br>L1<br>C4*<br>C2<br>C1<br>C5<br>C7 C8<br>R2<br>C 11<br>C6<br>C9C10<br>R1<br>C12<br>C3<br>L2<br>C23<br>C13 C14<br>C20*<br>C21*<br>C22*<br>C17*<br>C18*<br>C19*<br>C15 C16<br>L4<br>CUT OUT AREA<br>*C4, C17, C18, C19, C20, C21 and C22 are mounted vertically.<br>**Figure 11. MRFX1K80N Narrowband Production Test Fixture Component Layout – 230 MHz**<br>**Table 10. MRFX1K80N Narrowband Production Test Fixture Component Designations and Values – 230 MHz**|
|---|---|---|---|
|**Part**|**Description**|**Part Number**|**Manufacturer**|
|C1, C2, C3|22 pF Chip Capacitor|ATC100B220JT500XT|ATC|
|C4|27 pF Chip Capacitor|ATC100B270JT500XT|ATC|
|C5, C6|22F, 35 V Tantalum Capacitor|T491X226K035AT|Kemet|
|C7, C9|0.1F Chip Capacitor|CDR33BX104AKWS|AVX|
|C8, C10|220 nF Chip Capacitor|C1812C224K5RACTU|Kemet|
|C11, C12, C24, C25|1000 pF Chip Capacitor|ATC100B102JT50XT|ATC|
|C13|24 pF Chip Capacitor|ATC800R240JT500XT|ATC|
|C14, C15|20 pF Chip Capacitor|ATC800R200JT500XT|ATC|
|C16|22 pF Chip Capacitor|ATC800R220JT500XT|ATC|
|C17, C18, C19, C20, C21, C22|240 pF Chip Capacitor|ATC100B241JT200XT|ATC|
|C23|8.2 pF Chip Capacitor|ATC100B8R2CT500XT|ATC|
|C26, C27, C28, C29, C30, C31|470F, 100 V Electrolytic Capacitor|MCGPR100V477M16X32-RH|Multicomp|
|Coax1, 2, 3, 4|25Semi Rigid Coax Cable, 2.2Shield Length|UT-141C-25|Micro--Coax|
|L1, L2|5 nH Inductor, 2 Turns|A02TKLC|Coilcraft|
|L3, L4|6.6 nH Inductor, 2 Turns|GA3093-ALC|Coilcraft|
|R1, R2|10, 1/4 W Chip Resistor|CRCW120610R0JNEA|Vishay|
|PCB|Rogers AD255A 0.030,r= 2.55|D96894|MTL|



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## **TYPICAL CHARACTERISTICS — 230 MHz, TC = 25** _ **C NARROWBAND PRODUCTION TEST FIXTURE** 

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2500<br>VDD = 65 Vdc, f = 230 MHz<br>Pulse Width = 100 sec, 20% Duty Cycle<br>2000<br>Pin = 6.8 W<br>1500<br>1000<br>Pin = 3.4 W<br>500<br>0<br>0 0.5 1.0 1.5 2.0 2.5 3.0 3.5<br>VGS, GATE--SOURCE VOLTAGE (VOLTS)<br>Figure 12. Output Power versus Gate--Source<br>Voltage at a Constant Input Power<br>66 27 90<br>VDD = 65 Vdc, IDQ(A+B) = 100 mA, f = 230 MHz VDD = 65 Vdc, f = 230 MHz<br>Pulse Width = 100 sec, 20% Duty Cycle 26 Pulse Width = 100 sec, 20% Duty Cycle 80<br>63<br>25 I DQ(A+B)  = 900 mA 70<br>60<br>24 600 mA 60<br>300 mA<br>57 23 50<br>100 mA Gps D<br>22 40<br>54<br>21 900 mA 30<br>51 600 mA<br>20 300 mA 20<br>100 mA<br>48 19 10<br>28 30 32 34 36 38 40 42 100 1000 3000<br>Pin, INPUT POWER (dBm) PEAK Pout, OUTPUT POWER (WATTS) PEAK<br>f P1dB P3dB Figure 14. Power Gain and Drain Efficiency<br>(MHz) (W) (W) versus Output Power and Quiescent Current<br>230 1878 2143<br>Figure 13. Output Power versus Input Power<br>30 90 26<br>VDD = 65 Vdc, IDQ(A+B) = 100 mA, f = 230 MHz –40 _ C<br>28 Pulse Width = 100 sec, 20% Duty Cycle 80<br>25 _ C 24<br>26 85 _ C 70<br>24 Gps 60 22 65 V<br>TC = –40 _ C 60 V<br>22 50 20 55 V<br>25 _ C 50 V<br>20 40<br>_ 18<br>85 C 40 V<br>18 30<br>D<br>16<br>16 20 IDQ(A+B) = 100 mA, f = 230 MHz<br>VDD = 30 V Pulse Width = 100 sec, 20% Duty Cycle<br>14 10 14<br>60 100 1000 3000 0 500 1000 1500 2000 2500<br>Pout, OUTPUT POWER (WATTS) PEAK Pout, OUTPUT POWER (WATTS) PEAK<br>, OUTPUT POWER (WATTS) PEAK<br>out<br>P<br>, POWER GAIN (dB)<br>ps  DRAIN EFFICIENCY (%)<br>G D,<br>, OUTPUT POWER (dBm) PEAK <br>out<br>P<br>, POWER GAIN (dB) , POWER GAIN (dB)<br>Gps  DRAIN EFFICIENCY (%)D, Gps<br><br>**----- End of picture text -----**<br>


**Figure 15. Power Gain and Drain Efficiency versus Output Power** 

**Figure 16. Power Gain versus Output Power and Drain--Source Voltage** 

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## **230 MHz NARROWBAND PRODUCTION TEST FIXTURE** 

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f Zsource Zload<br>MHz  <br>230 0.9 + j2.3 1.9 + j2.5<br>Zsource = Test fixture impedance as measured from<br>gate to gate, balanced configuration.<br>Zload = Test fixture impedance as measured from<br>drain to drain, balanced configuration.<br>Input Device Output<br>Matching + Under -- Matching<br>50  Network Test Network 50 <br>-- +<br>Zsource Zload<br>**----- End of picture text -----**<br>


**Figure 17. Narrowband Series Equivalent Source and Load Impedance – 230 MHz** 

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## **PACKAGE DIMENSIONS** 

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## **PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS** 

Refer to the following resources to aid your design process. 

## **Application Notes** 

- AN1907: Solder Reflow Attach Method for High Power RF Devices in Over--Molded Plastic Packages 

- AN1955: Thermal Measurement Methodology of RF Power Amplifiers 

## **Engineering Bulletins** 

- EB212: Using Data Sheet Impedances for RF LDMOS Devices 

## **Software** 

- Electromigration MTTF Calculator 

- RF High Power Model 

- .s2p File 

## **Development Tools** 

- Printed Circuit Boards 

## **To Download Resources Specific to a Given Part Number:** 

1. Go to http://www.nxp.com/RF 

2. Search by part number 

3. Click part number link 

4. Choose the desired resource from the drop down menu 

## **REVISION HISTORY** 

The following table summarizes revisions to this document. 

|**Revision**|**Date**|**Description**|
|---|---|---|
|0|Apr. 2018|<br>Initial release of data sheet|



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## _**How to Reach Us:**_ 

**Home Page:** nxp.com 

**Web Support:** nxp.com/support 

Information in this document is provided solely to enable system and software implementers to use NXP products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits based on the information in this document. NXP reserves the right to make changes without further notice to any products herein. 

NXP makes no warranty, representation, or guarantee regarding the suitability of its products for any particular purpose, nor does NXP assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters that may be provided in NXP data sheets and/or specifications can and do vary in different applications, and actual performance may vary over time. All operating parameters, including “typicals,” must be validated for each customer application by customer’s technical experts. NXP does not convey any license under its patent rights nor the rights of others. NXP sells products pursuant to standard terms and conditions of sale, which can be found at the following address: nxp.com/SalesTermsandConditions. 

NXP and the NXP logo are trademarks of NXP B.V. All other product or service names are the property of their respective owners. E 2018 NXP B.V. 

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Updated at April 10, 2026

NXP Semiconductors is a global leader in secure connectivity solutions, driving innovation across the automotive, industrial, IoT, mobile, and communications infrastructure markets. By developing advanced, purpose-built technologies, NXP enables devices to sense, think, connect, and act intelligently, delivering rigorously tested components that make the connected world safer and more efficient. Within the semiconductor space, NXP is highly regarded for its extensive range of high-performance integrated circuits and discrete devices. The brand's portfolio excels in drivers and interfaces, featuring a comprehensive selection of I/O expanders designed to streamline complex system architectures. For demanding high-frequency and wireless applications, NXP provides industry-leading RF FETs and RF/PIN diodes engineered to deliver exceptional signal integrity, efficiency, and reliability. The NXP product lineup further extends to essential discrete components, including versatile bipolar transistors, JFETs, and small signal diodes optimized for precision switching and amplification. Additionally, the portfolio supports advanced automation and smart applications with precision IC sensors, such as MEMS accelerometers, alongside specialized power management solutions like AC/DC LED driver ICs and single MOSFETs for cutting-edge electronics design.

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