MRFE6VP61K25NR6

RF FET Transistor, 133 V, 3.333 kW, 1.8 MHz, 600 MHz, OM-1230

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Manufacturer: NXP
Product type: RF FETs
Drain Source Voltage Vds:133V; Continuous Drain Current Id:-; Power Dissipation Pd:3.333kW; Operating Frequency Min:1.8MHz; Operating Frequency Max:600MHz; RF Transistor Case:OM-1230; No.
MSL: MSL 3 - 168 hours
SVHC: No SVHC (27-Jun-2024)
No. of Pins: 4Pins
Channel Type: N Channel
Product Range: -
Power Dissipation: 3.333kW
Transistor Mounting: Flange
Transistor Case Style: OM-1230
Operating Frequency Max: 600MHz
Operating Frequency Min: 1.8MHz
Drain Source Voltage Vds: 133V
Operating Temperature Max: 225°C
Continuous Drain Current Id: -

Delivery and price
Units per pack	150
Price	481.42 €
Current stock	10+
Lead time	30 days

Datasheet

**Freescale Semiconductor** Technical Data 

Document Number: MRFE6VP61K25N Rev. 2, 4/2015 

## **RF Power LDMOS Transistors** High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs 

## **MRFE6VP61K25N MRFE6VP61K25GN** 

These high ruggedness devices are designed for use in high VSWR industrial, medical, broadcast, aerospace and mobile radio applications. Their unmatched input and output design allows for wide frequency range use from 1.8 to 600 MHz. 

## **Typical Performance:** VDD = 50 Vdc 

|**Frequency**<br>**(MHz)**|**Signal Type**|**Pout**<br>**(W)**|**Gps**<br>**(dB)**|**D**<br>**(%)**|
|---|---|---|---|---|
|87.5–108 **(1,2)**|CW|1309 CW|24.1|77.6|
|230 **(3)**|Pulse<br>(100sec, 20% Duty Cycle)|1250 Peak|23.0|72.3|



## **Load Mismatch/Ruggedness** 

|**Frequency**<br>**(MHz)**|**Signal Type**|**VSWR**|**Pin**<br>**(W)**|**Test**<br>**Voltage**|**Result**|
|---|---|---|---|---|---|
|230 **(3)**|Pulse<br>(100sec, 20%<br>Duty Cycle)|> 65:1 at all<br>Phase Angles|11.5 Peak<br>(3 dB<br>Overdrive)|50|No Device<br>Degradation|



1. Measured in 87.5–108 MHz broadband reference circuit. 

2. The values shown are the center band performance numbers across the indicated frequency range. 

## **1.8–600 MHz, 1250 W CW, 50 V WIDEBAND RF POWER LDMOS TRANSISTORS** 

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OM--1230--4L<br>PLASTIC<br>MRE6VP61K25N<br>OM--1230G--4L<br>PLASTIC<br>MRE6VP61K25GN<br>**----- End of picture text -----**<br>


3. Measured in 230 MHz narrowband test circuit. 

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i |<br>Gate A 3 1 Drain A<br>fh<br>Gate B 4 2 Drain B<br>L ot<br>(Top View)<br>Note: Exposed backside of the package is<br>the source terminalfor the transistors.<br>Figure 1. Pin Connections<br>**----- End of picture text -----**<br>


## **Features** 

- Unmatched Input and Output Allowing Wide Frequency Range Utilization 

- Device can be used Single--Ended or in a Push--Pull Configuration 

- Qualified up to a Maximum of 50 VDD Operation 

- Characterized from 30 to 50 V for Extended Power Range 

- Suitable for Linear Application with Appropriate Biasing 

- Integrated ESD Protection with Greater Negative Gate--Source Voltage Range for Improved Class C Operation 

- Characterized with Series Equivalent Large--Signal Impedance Parameters 

- Recommended drivers: AFT05MS004N (4 W) or MRFE6VS25N (25 W) 

## **Typical Applications** 

- Broadcast 

   - Aerospace 

- FM broadcast 

   - VHF omnidirectional range (VOR) 

- HF and VHF broadcast 

   - Weather radar 

- Industrial, Scientific, Medical (ISM) 

   - Mobile Radio 

- CO2 laser generation 

   - HF and VHF communications 

- Plasma etching 

   - PMR base stations 

- Particle accelerators (synchrotrons) 

- MRI 

- Industrial heating/welding 

**MRFE6VP61K25N MRFE6VP61K25GN** ~~freescalz~~ 

 Freescale Semiconductor, Inc., 2015. All rights reserved. 

RF Device Data Freescale Semiconductor, Inc. 

1 

## **Table 1. Maximum Ratings** 

|**Table 1. Maximum Ratings**|||||
|---|---|---|---|---|
|**Rating**|||**Symbol**<br>**Value**|**Unit**|
|Drain--Source Voltage|||VDSS<br>–0.5, +133|Vdc|
|Gate--Source Voltage|||VGS<br>–6.0, +10|Vdc|
|Storage Temperature Range|||Tstg<br>–65 to +150|C|
|Case Operating Temperature Range|||TC<br>–40 to +150|C|
|Operating Junction Temperature Range **(1,2)**|||TJ<br>–40 to +225|C|
|Total Device Dissipation @ TC= 25C|||PD<br>3333|W|
|Derate above 25C|||16.67|W/C|
|**Table 2. Thermal Characteristics**|||||
|**Characteristic**<br>**Symbol**<br>**Value (2,3)**<br>**Unit**<br>Thermal Resistance, Junction to Case<br>CW: Case Temperature 109C, 1250 W CW, 50 Vdc, IDQ(A+B)= 245 mA, 98 MHz<br>RJC<br>0.06<br>C/W<br>Thermal Impedance, Junction to Case<br>Pulse: Case Temperature 74C, 1250 W Peak, 100sec Pulse Width, 20% Duty Cycle,<br>IDQ(A+B)= 100 mA, 230 MHz<br>ZJC<br>0.016<br>C/W<br>~~=~~|||||
|**Table 3. ESD Protection Characteristics**|||||
|**Test Methodology**<br>**Class**<br>Human Body Model (per JESD22--A114)<br>2, passes 2500 V<br>Machine Model (per EIA/JESD22--A115)<br>B, passes 250 V<br>Charge Device Model (per JESD22--C101)<br>IV, passes 2000 V<br>**Table 4. Moisture Sensitivity Level**<br>**Test Methodology**<br>**Rating**<br>**Package Peak Temperature**<br>**Unit**<br>Per JESD22--A113, IPC/JEDEC J--STD--020<br>3<br>260<br>C<br>~~==~~|||||
|**Table 5. Electrical Characteristics** (TA= 25C unless otherwise noted)|||||
|**Characteristic**|**Symbol**|**Min**|**Typ**<br>**Max**|**Unit**|
|**Off Characteristics (4)**|||||
|Gate--Source Leakage Current<br>(VGS= 5 Vdc, VDS= 0 Vdc)<br>IGSS<br>—<br>—<br>1<br>Adc<br>Drain--Source Breakdown Voltage<br>(VGS= 0 Vdc, ID= 100 mAdc)<br>V(BR)DSS<br>133<br>—<br>—<br>Vdc<br>Zero Gate Voltage Drain Leakage Current<br>(VDS= 50 Vdc, VGS= 0 Vdc)<br>IDSS<br>—<br>—<br>10<br>Adc<br>Zero Gate Voltage Drain Leakage Current<br>(VDS= 100 Vdc, VGS= 0 Vdc)<br>IDSS<br>—<br>—<br>20<br>Adc<br>~~EEE~~|||||
|**On Characteristics**|||||
|Gate Threshold Voltage **(4)**<br>(VDS= 10 Vdc, ID= 1776Adc)<br>VGS(th)<br>1.7<br>2.2<br>2.7<br>Vdc<br>Gate Quiescent Voltage<br>(VDD= 50 Vdc, ID(A+B)= 100 mAdc, Measured in Functional Test)<br>VGS(Q)<br>1.9<br>2.4<br>2.9<br>Vdc<br>Drain--Source On--Voltage **(4)**<br>(VGS= 10 Vdc, ID= 2 Adc)<br>VDS(on)<br>—<br>0.2<br>—<br>Vdc<br>Forward Transconductance **(4)**<br>(VDS= 10 Vdc, ID= 30 Adc)<br>gfs<br>_—_<br>28.0<br>_—_<br>S<br>~~SEE~~|||||
|1. Continuous use at maximum temperature will affect MTTF.|||||
|2. MTTF calculator available at http://www.freescale.com/rf/calculators.|||||



3. Refer to AN1955 – _Thermal Measurement Methodology of RF Power Amplifiers._ Go to http://www.freescale.com/rf and search AN1955. 

4. Each side of device measured separately. 

(continued) 

**MRFE6VP61K25N MRFE6VP61K25GN** 

RF Device Data Freescale Semiconductor, Inc. 

2 

**Table 5. Electrical Characteristics** (TA = 25C unless otherwise noted) **(continued)** 

|**Table 5. Electrical Characteristics** (TA = 25C unless otherwise noted)A = 25C unless otherwise noted)= 25C unless otherwise noted)C unless otherwise noted)C unless otherwise noted)**(continued)**|**(continued)**|**(continued)**|||||
|---|---|---|---|---|---|---|
|**Characteristic**<br>**Symbol**||**Min**||**Typ**|**Max**|**Unit**|
|**Dynamic Characteristics**|||||||
|Reverse Transfer Capacitance **(1)**<br>Crss||—||2.8|—|pF|
|(VDS= 50 Vdc30 mV(rms)ac @ 1 MHz, VGS= 0 Vdc)|||||||
|Output Capacitance **(1)**<br>Coss||—||185|—|pF|
|(VDS= 50 Vdc30 mV(rms)ac @ 1 MHz, VGS= 0 Vdc)|||||||
|Input Capacitance **(1)**<br>Ciss||—||562|—|pF|
|(VDS= 50 Vdc, VGS= 0 Vdc30 mV(rms)ac @ 1 MHz)|||||||
|**Functional Tests (2,3)** (In Freescale Test Fixture, 50 ohm system) VDD= 50 Vdc, IDQ(A+B)= 100 mA, P|= 100 mA, Pout= 1250 W Peak (250 W Avg.),||||= 1250 W Peak (250 W Avg.),||
|f = 230 MHz, 100sec Pulse Width, 20% Duty Cycle|||||||
|Power Gain<br>Gps<br>22.0<br>23.0<br>24.5<br>dB<br>Drain Efficiency<br>D<br>68.5<br>72.3<br>—<br>%<br>Input Return Loss<br>IRL<br>—<br>–13<br>–9<br>dB<br>~~ee~~|||||||
|**Table 6. Load Mismatch/Ruggedness** (In Freescale Test Fixture, 50 ohm system) IDQ(A+B)= 100 mA||||= 100 mA|||
|**Frequency**<br>**(MHz)**<br>**Signal Type**<br>**VSWR**<br>**Pin**<br>**(W)**<br>**Test Voltage, VDD**<br>**Result**<br>230<br>Pulse<br>(100sec, 20% Duty Cycle)<br>> 65:1 at all<br>Phase Angles<br>11.5 Peak<br>(3 dB Overdrive)<br>50<br>No Device Degradation<br>~~—~~|||||||
|**Table 7. Ordering Information**|||||||
|**Device**<br>**Tape and Reel Information**<br>**Package**<br>MRFE6VP61K25NR6<br>R6 Suffix = 150 Units, 56 mm Tape Width, 13--Reel<br>OM--1230--4L<br>MRFE6VP61K25GNR6<br>OM--1230G--4L<br>~~—~~|||||||
|1. Each side of device measured separately.|||||||



2. Devices tested without thermal grease. 

3. Measurements made with device in straight lead configuration before any lead forming operation is applied. Lead forming is used for gull wing (GN) parts. 

**MRFE6VP61K25N MRFE6VP61K25GN** 

RF Device Data Freescale Semiconductor, Inc. 

3 

## **TYPICAL CHARACTERISTICS** 

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10000<br>Measured with 30 mV(rms)ac @ 1 MHz<br>Bee VGS = 0 Vdc<br>1000 Ciss<br>100 ————————Kf C oss<br>10 a a<br>Crss<br>1<br>0 10 20 30 40 50<br>VDS, DRAIN--SOURCE VOLTAGE (VOLTS)<br>Note:  Each side of device measured separately.<br>C, CAPACITANCE (pF)<br>**----- End of picture text -----**<br>


**Figure 2. Capacitance versus Drain--Source Voltage** 

**==> picture [242 x 249] intentionally omitted <==**

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1.06<br>1.05 IDQ(A+B) = 100 mA VDD = 50 Vdc<br>1.04 CO,<br>1.03 500 mA<br>1500 mA<br>1.02<br>1.01 2000 mA<br>1 ——-a es a<br>0.99<br>0.98<br>0.97 a eS<br>0.96<br>0.95<br>0.94<br>–50 –25 0 25 50 75 100<br>TC, CASE TEMPERATURE (C)<br>IDQ (mA) Slope (mV/  C)<br>100 –2.70<br>500 –2.42<br>1500 –2.22<br>2000 –2.05<br>GS(Q)<br>NORMALIZED V<br>**----- End of picture text -----**<br>


**Figure 3. Normalized VGS versus Quiescent Current and Case Temperature** 

**MRFE6VP61K25N MRFE6VP61K25GN** 

RF Device Data Freescale Semiconductor, Inc. 

4 

## **230 MHz NARROWBAND PRODUCTION TEST FIXTURE** 

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**Figure 4. MRFE6VP61K25N Narrowband Test Circuit Component Layout — 230 MHz** 

**Table 8. MRFE6VP61K25N Narrowband Test Circuit Component Designations and Values — 230 MHz** 

|**Part**|**Description**|**Part Number**|**Manufacturer**|
|---|---|---|---|
|C1|20 pF Chip Capacitor|ATC100B200JT500XT|ATC|
|C2, C3, C5|27 pF Chip Capacitors|ATC100B270JT500XT|ATC|
|C4|0.8–8.0 pF Variable Capacitor, Gigatrim|27291SL|Johanson|
|C6, C10|22F, 35 V Tantalum Capacitors|T491X226K035AT|Kemet|
|C7, C11|0.1F Chip Capacitors|CDR33BX104AKWS|AVX|
|C8, C12|220 nF Chip Capacitors|C1812C224K5RAC-TU|Kemet|
|C9, C13, C21, C25|1000 pF Chip Capacitors|ATC100B102JT50XT|ATC|
|C14|39 pF Chip Capacitor|ATC100B390JT500XT|ATC|
|C15|39 pF Chip Capacitor|ATC100C390JT250XT|ATC|
|C16, C17, C18, C19|240 pF Chip Capacitors|ATC100B241JT200XT|ATC|
|C20|9.1 pF Chip Capacitor|ATC100B9R1BT500XT|ATC|
|C22, C23, C24, C26, C27, C28|470F, 63 V Electrolytic Capacitors|MCGPR63V477M13X26-RH|Multicomp|
|C29|47 pF Chip Capacitor|ATC100C470JT250XT|ATC|
|Coax1, 2, 3, 4|25Semi Rigid Coax, 2.2Shield Length|UT-141C-25|Micro--Coax|
|L1, L2|5 nH Inductors|A02TKLC|Coilcraft|
|L3, L4|6.6 nH Inductors|GA3093-ALC|Coilcraft|
|R1, R2|10, 1/4 W Chip Resistors|CRCW120610R0JNEA|Vishay|
|PCB|Arlon AD255A 0.030,r= 2.55|D63312|MTL|



**MRFE6VP61K25N MRFE6VP61K25GN** 

RF Device Data Freescale Semiconductor, Inc. 

5 

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m<br>C h C h<br>C i rT rT C i<br>CH CH<br>| |<br>El! | rT ti<br>| |<br>--H_] [-H_1<br>|r|<br>i i<br>1 =<br>a ll a ld<br>4 | | m a LU<br>F l! | | E h<br>a all | | E h<br>: I!<br>RF<br>OUTPUT<br>Z32<br>C20<br>Z31<br>COAX3 COAX4<br>VDD Z29 Z30 VDD<br>+ C24 + C28<br>C16 C17 C18 C19<br>+ C23 + C27<br>Z27 Z28<br>C15<br>+ C22 + C26<br>Z25 Z26<br>C29<br>C21 C25 Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip<br>Z23 Z24         <br>0.363 0.154 0.507 0.300 0.300 0.300 0.300 0.082 0.082<br>Description<br>L3 Z19 Z17 Z21 C14 Z22 Z18 Z20 L4         <br>Z15 Z16 0.466 0.187 0.059 1.006 0.247 0.125 0.116 0.186 0.179<br>DUT<br>Microstrip Z17*, Z18* Z19*, Z20* Z21, Z22 Z23, Z24 Z25, Z26 Z27, Z28 Z29, Z30 Z31 Z32<br>Z13 Z14<br>R1 R2<br>Z11 Z12<br>C13 L1 L2 C9<br>Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip<br>        <br>C12 Z9 Z10 C8<br>C5<br>0.082 0.082 0.100 0.285 0.285 0.285 0.058 0.726 0.507<br>Description<br>C11 C7         <br>Z7 Z8<br>C4<br>0.192 0.175 0.170 0.116 0.116 0.108 0.872 0.412 0.416<br>+ C10 + C6<br>Z5 Z6<br>C2 C3<br>GG GG Figure 5. MRFE6VP61K25N Narrowband Test Circuit Schematic — 230 MHz<br>V Z3 Z4 V Table 9. MRFE6VP61K25N Narrowband Test Circuit Microstrips — 230 MHz Microstrip Z1 Z2 Z3, Z4 Z5, Z6 Z7, Z8 Z9, Z10 Z11*, Z12* Z13, Z14 Z15, Z16 * Line lengths include microstrip bends<br>COAX1 COAX2<br>Z2<br>C1<br>Z1<br>RF<br>INPUT<br>**----- End of picture text -----**<br>


**MRFE6VP61K25N MRFE6VP61K25GN** 

RF Device Data Freescale Semiconductor, Inc. 

6 

**TYPICAL CHARACTERISTICS — 230 MHz** 

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1600<br>1400 V DD = 50 Vdc, f = 230 MHz<br>Pulse Width = 100 sec, 20% Duty Cycle<br>1200 eee<br>1000 PF |<br>Pin = 6 W Pin = 3 W<br>800<br>PF | || |UY |g<br>600 P| YY<br>400 P| | A l|TA |<br>200 | ry] FY | |<br>0 I i]t| + |YiET | df t<br>0 0.5 1 1.5 2 2.5 3 3.5<br>VGS, GATE--SOURCE VOLTAGE (VOLTS)<br>, OUTPUT POWER (WATTS) PEAK<br>out<br>P<br>**----- End of picture text -----**<br>


**Figure 6. Output Power versus Gate--Source Voltage at a Constant Input Power** 

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64 27 90<br>VDD = 50 Vdc, IDQ(A+B) = 100 mA, f = 230 MHz VDD = 50 Vdc, IDQ(A+B) = 100 mA, f = 230 MHz<br>Pulse Width = 100 sec, 20% Duty Cycle 26 Pulse Width = 100 sec, 20% Duty Cycle 80<br>60<br>25 70<br>IDQ(A+B) = 900 mA<br>56 P) | Lame yd 24 PoTTT 600 mA [|] 60<br>23 50<br>D<br>300 mA<br>52 eZee 22 IN 100 mA Gps 40<br>21 30<br>48 CZ) 20 ae 600 mA e 900 mA r in| 20<br>19 300 mA 10<br>44 18 100 mA Er 0<br>PEECCEC) | BAR rh<br>26 28 30 32 34 36 38 40 42 50 100 1000 2000<br>Pin, INPUT POWER (dBm) Pout, OUTPUT POWER (WATTS) PEAK<br>f P1dB P3dB Figure 8. Power Gain and Drain Efficiency<br>(MHz) (W) (W) versus Output Power and Quiescent Current<br>230 1295 1518<br>Figure 7. Output Power versus Input Power<br>26 90 26<br>25 _ C<br>25<br>25 ee ae 80 a<br>TC = –40 _ C 24<br>24 70<br>ata 23 ee<br>23 60<br>| ok \\ | 22 i.<br>Gps<br>22 50 21 50 V<br>A IN 85 _ C ISA ALTE 45 V<br>21 _ 40 20<br>25 _ C 85 _ C D –40 C 19 40 V<br>20 eAMW 30 FEA 35 V<br>18<br>19 VDD = 50 Vdc, IDQ(A+B) = 100 mA, f = 230 MHz 20 17 VDD = 30 V I DQ(A+B) = 100 mA, f = 230 MHz<br>18 aye Pulse Width = 100 sec, 20% Duty Cycle 10 16 ee! Pulse Width = 100 A  sec, 20% Duty Cycle<br>40 100 1000 2000 0 200 400 600 800 1000 1200 1400 1600<br>mail | EEE<br>Pout, OUTPUT POWER (WATTS) PEAK Pout, OUTPUT POWER (WATTS) PEAK<br>Figure 9. Power Gain and Drain Efficiency Figure 10. Power Gain versus Output Power<br>versus Output Power and Drain--Source Voltage<br>, POWER GAIN (dB)<br>ps  DRAIN EFFICIENCY (%)<br>G D,<br>, OUTPUT POWER (dBm) PEAK <br>out<br>P<br>, POWER GAIN (dB) , POWER GAIN (dB)<br>Gps  DRAIN EFFICIENCY (%)D, Gps<br><br>**----- End of picture text -----**<br>


**MRFE6VP61K25N MRFE6VP61K25GN** 

RF Device Data Freescale Semiconductor, Inc. 

7 

**230 MHz NARROWBAND PRODUCTION TEST FIXTURE** 

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f Zsource Zload<br>MHz  <br>pf Zsource230= Test circuit impedance as measured from2.10 + j3.70 {| 2.55 + j1.90 _|<br>gate to gate, balanced configuration.<br>Zload = Test circuit impedance as measured from<br>drain to drain, balanced configuration.<br>Input Device Output<br>Matching + Under -- Matching<br>50  Network Test Network 50 <br>Li -- t t + l<br>Zsource Zload<br>**----- End of picture text -----**<br>


**Figure 11. Narrowband Series Equivalent Source and Load Impedance — 230 MHz** 

**MRFE6VP61K25N MRFE6VP61K25GN** 

RF Device Data Freescale Semiconductor, Inc. 

8 

## **87.5–108 MHz BROADBAND REFERENCE CIRCUIT** 

**Table 10. 87.5–108 MHz Broadband Performance** (In Freescale Reference Circuit, 50 ohm system) VDD = 50 Vdc, IDQ(A+B) = 250 mA, Pin = 5 W, CW 

|**Frequency**<br>**(MHz)**|**Gps**<br>**(dB)**|**D**<br>**(%)**|**Pout**<br>**(W)**|
|---|---|---|---|
|87.5|23.8|78.3|1212|
|98|24.1|77.6|1309|
|108|23.6|77.8|1161|



**MRFE6VP61K25N MRFE6VP61K25GN** 

RF Device Data Freescale Semiconductor, Inc. 

9 

## **87.5–108 MHz BROADBAND REFERENCE CIRCUIT — 2.88**  **5.11**  **(73.1 mm**  **130 mm)** 

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**----- Start of picture text -----**<br>
°°° no C28 C25 C26 C27<br>° C7 C22 C21<br>° C6 — —<br>339 ceodo 5 _ o —-<br>8 yh 8 5 5<br>2 C5 oi °<br>$8 e|\=I=( looddoo0 0000000 , o ~SfO rt | y = ® 000000™ 0°1 O y© 0000000007 O 00000000ne<br>O° 8| F4 L4<br>8° °°o of =Eq e4 A<br>o 8) fo —<br>3 ® lojoE O !O)° L1  [R2] C20C19 Ue-*:loo<br>°386°2:° . 8 C4 -} R1 C12 L3 C18C17 skLIHe:}Oeooo°<br>°23$240° Li = C3 ooe I Q1 e eea 0 .g C24 C16 LoQoo6 e °8°<br>ox C11 o 8<br>me, C1 38<br>= = C23* LE3d [Jo o00!°<br>C2<br>C15*<br>°8°6 ‘o ) °°$° 1Oe o|oO]9 L_ Fy L2 R3 C13 | [——F] —EIH [II]<br>°°8°8: °°°} TR OeE E ESTES T T C8 fooe ay ©“Eso8)o} rF—Foo r ; © 000000000077 000000000000 7000000000000° 000 ® C14 Bo00000°°3°<br>° oe ooo 8° ° °<br>°oo °° ofe Fresemiconduescale.ctor om C9 C10 0600000000 MRFE6VP61K25N D62499 88°<br>e°1©.000000000000000 000000000 000000000000000000 000000000000000000 000000000000000000 000000000000000000 0008<br>*C15 and C23 are mounted vertically.<br>0.472 0.472<br>(12) (12)<br>0.196<br>(5) 0.472(12) 0.472(12) 0.669<br>(17)<br>0.196 Bend Here<br>(5) 0.197 0.197 Inches<br>(5) (5) (mm)<br>Side view 45 degree<br>L3 total wire length = 2.2 (56 mm)<br>**----- End of picture text -----**<br>


**Figure 12. MRFE6VP61K25N 87.5–108 MHz Broadband Reference Circuit Component Layout** 

**Figure 13. MRFE6VP61K25N 87.5–108 MHz Broadband Reference Circuit Component Layout — Bottom** 

**MRFE6VP61K25N MRFE6VP61K25GN** 

RF Device Data Freescale Semiconductor, Inc. 

10 

## **87.5–108 MHz BROADBAND REFERENCE CIRCUIT** 

**Table 11. MRFE6VP61K25N 87.5–108 MHz Broadband Reference Circuit Component Designations and Values** 

|**Part**<br>~~RG~~<br>~~a~~|**Description**<br>~~RG~~<br>~~ee~~|**Part Number**<br>~~RG~~<br>~~ee~~|**Manufacturer**<br>~~RG~~|
|---|---|---|---|
|C1, C3, C6, C9, C18, C19,<br>C20, C21, C22<br>~~RG~~<br>~~a~~|1000 pF Chip Capacitors<br>~~RG~~<br>~~ee~~|ATC100B102JT50XT<br>~~RG~~<br>~~ee~~|ATC<br>~~RG~~|
|C2<br>~~a~~<br>~~a~~|22 pF Chip Capacitor<br>~~ee~~|ATC100B220JT500XT<br>~~ee~~|ATC|
|C4, C5, C8<br>~~a~~<br>~~a~~|10000 pF Chip Capacitors|ATC200B103KT50XT|ATC|
|C7, C10, C15, C16, C17, C23<br>~~a~~|470 pF Chip Capacitors|ATC100B471JT200XT|ATC|
|C11<br>~~a~~|100 pF, 300 V Mica|MIN02-002EC101J-F|CDE|
|C12<br>~~a~~|15 pF, 300 V Mica|MIN02-002CC150J-F|CDE|
|C13<br>~~a~~|6.2 pF Chip Capacitor|ATC100B6R2BT500XT|ATC|
|C14<br>~~a~~|15 pF Chip Capacitor|ATC100B150JT500XT|ATC|
|C24<br>~~a~~|12 pF Chip Capacitor|ATC100B120JT500XT|ATC|
|C25, C26, C27<br>~~a~~|220F, 63 V Electrolytic Capacitors|EEU-FC1J221|Panasonic|
|C28<br>~~a~~<br>~~a~~|22F, 35 V Electrolytic Capacitor|UUD1V220MCL1GS|Nichicon|
|L1, L2<br>~~a~~<br>~~a~~|17.5 nH Inductors, 6 Turns<br>~~ee~~|B06TJLC<br>~~ee~~|Coilcraft|
|L3<br>~~a~~<br>~~a~~|1.5 mm Non--Tarnish Silver Plated Copper Wire,<br>Total Wire Length = 2.2/56 mm<br>~~ee~~|SP1500NT-001<br>~~ee~~|—|
|L4<br>~~a~~<br>~~a~~|22 nH Inductor<br>~~ee~~|1212VS-22NMEB<br>~~ee~~|Coilcraft|
|Q1<br>~~a~~<br>~~a~~|RF Power LDMOS Transistor<br>~~ee~~|MRFE6VP61K25NR6<br>~~ee~~|Freescale|
|R1<br>~~a~~<br>~~a~~|10, 1/4 W Chip Resistor|CRCW120610R0JNEA|Vishay|
|R2, R3<br>~~a~~<br>~~ee~~|33, 2 W Chip Resistors|1-2176070-3|TE Connectivity|
|PCB<br>~~ee~~|Arlon TC350 0.030,r= 3.5|D62499|MTL|



Note: Refer to MRFE6VP61K25N’s printed circuit boards and schematics to download the 87.5–108 MHz heatsink drawing. 

**MRFE6VP61K25N MRFE6VP61K25GN** 

RF Device Data Freescale Semiconductor, Inc. 

11 

## **TYPICAL CHARACTERISTICS — 87.5–108 MHz BROADBAND REFERENCE CIRCUIT** 

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28 79<br>27 78<br>TTT TT<br>2526 CREi  REE D 7776<br>24 aoe 75<br>Gps<br>23 TPP 1400<br>22 1300<br>aoe<br>Pout<br>21 Per RE 1200<br>20 PEEP Pr 1100<br>19 ene VDD = 50 Vdc, Pin = 5 W, IDQ(A+B) = 250 mA 1000<br>87 89 91 93 95 97 99 101 103 105 107 109<br>f, FREQUENCY (MHz)<br>, DRAIN<br>D<br><br>EFFICIENCY (%)<br>, POWER GAIN (dB)<br>ps<br>G<br>, OUTPUT<br>out<br>P<br>POWER (WATTS)<br>**----- End of picture text -----**<br>


**Figure 14. Power Gain, Drain Efficiency and CW Output Power versus Frequency** 

**==> picture [281 x 176] intentionally omitted <==**

**----- Start of picture text -----**<br>
29 100<br>28 f = 87.5 MHz D 80<br>27 Pte 98 MHz 60<br>108 MHz t+ J<br>26 40<br>25 iy se 98 MHz 20<br>24 y || TSK 87.5 MHz ee | Gps || 0<br>23 108 MHz 1500<br>22 1250<br>98 MHz<br>21 | | rrr Pout TL 1000<br>ST<br>20 | | er 87.5 MHz 108 MHz | 750<br>1918 || [LA] [A] | | VlDQ(A+B) DD = 50 Vdc = 250 mA 500250<br>17 7 | | | | 0<br>0 1 2 3 4 5 6 7 8<br>Pin, INPUT POWER (WATTS)<br>, DRAIN<br>D<br><br>EFFICIENCY (%)<br>, POWER GAIN (dB)<br>ps<br>G<br>, OUTPUT<br>out<br>P<br>POWER (WATTS)<br>**----- End of picture text -----**<br>


**Figure 15. Power Gain, Drain Efficiency and CW Output Power versus Input Power and Frequency** 

**MRFE6VP61K25N MRFE6VP61K25GN** 

RF Device Data Freescale Semiconductor, Inc. 

12 

## **87.5–108 MHz BROADBAND REFERENCE CIRCUIT** 

**==> picture [437 x 467] intentionally omitted <==**

**----- Start of picture text -----**<br>
“3 st ONS f = 87.5 MHz ‘ \ ‘1 wae oS<br>— my,<br>er,MigrES S EL T Zo = 10  E<br>ey Sock, x Zsource SAS || ne < %<br>Sof S Sok La E I S<br>Ke . KAKI E Efy<br>f = 108 MHz<br>PY & LYSBESSHEREROLOOKS f = 108 MHz LRRK SeogRESOEE AAS ere EG ro PPATLS6iS<br>Sfe/p8} PV‘S LESWORKERSRLS ix) SONSKe  XaLT eeecey HRYLT PRES<br>/, £¥s e REX LR RD EERRS<br>ohgf | belRELys PETsrr Zload RI RORSESSKSing  coeTHERES<br>f = 87.5 MHz<br>Teh EE ETI R ES eebeees::<br>tLeho} blTROTé LTE ORESa LORREEDOR SEIOK ZIRE SSS CTTSri<br>SP] HG itn eee ee LESS PLES LER PEERS SHS<br>| Ae e R ee<br>* HA e e panei manmn a  ees aeRen e e ca e PERRET<br>fe] ha a P<br>HO ffSemeeseessefififiie’ SemaeeNEEereee seesitneennncenige |<br>PEPE LT PEER HH Heat HASH A 2} _$§<br>ir eee eerie eeerretmetcy | ee<br>°| puctance cousonenr(@)- |_| EEE aa<br>8 BRBEOSEEECCRSSRARaan component(-8-}, or sy [| LI LL eeess SSS ><br>i\" 7 Gee euueemmccees | We<br>a) Pre<br>f Zsource Zload<br>MHz  <br>87.5 2.10 + j6.67 4.11 + j3.87<br>98 2.80 + j6.96 3.33 + j3.85<br>108 3.60 + j6.65 2.97 + j4.45<br>Zsource = Test circuit impedance as measured from<br>gate to gate, balanced configuration.<br>Zload = Test circuit impedance as measured<br>from drain to drain, balanced configuration.<br>Input Device Output<br>Matching + Under -- Matching<br>Network Test Network<br>50  50 <br>-- +<br>Zsource Zload<br>**----- End of picture text -----**<br>


**Figure 16. Broadband Series Equivalent Source and Load Impedance — 87.5–108 MHz** 

**MRFE6VP61K25N MRFE6VP61K25GN** 

RF Device Data Freescale Semiconductor, Inc. 

13 

**HARMONIC MEASUREMENTS — 87.5–108 MHz BROADBAND REFERENCE CIRCUIT** 

**==> picture [456 x 222] intentionally omitted <==**

**----- Start of picture text -----**<br>
F1 87.5 MHz<br>Fundamental (F1) H2 175 MHz –37 dB<br>| [te] [st] | |<br>H3 262.5 MHz –30 dB<br>e e H4 350 MHz –42 dB H2 H3 H4<br>(175 MHz) (262.5 MHz) (350 MHz)<br>–37 dB –30 dB –42 dB<br>oa |<br>e e H3<br>H2<br>H4<br>it | pg m |<br>ll | i<br>wll, - lestad ba 7 | Wedd ald ateedlos | lh [sche shalee hai<br>eeee ee ee<br>ee<br>Center: 228.5 MHz 35 MHz Span: 350 MHz<br>**----- End of picture text -----**<br>


**Figure 17. 87.5 MHz Harmonics @ 1215 W CW** 

**MRFE6VP61K25N MRFE6VP61K25GN** 

RF Device Data Freescale Semiconductor, Inc. 

14 

## **PACKAGE DIMENSIONS** 

**MRFE6VP61K25N MRFE6VP61K25GN** 

RF Device Data Freescale Semiconductor, Inc. 

15 

**MRFE6VP61K25N MRFE6VP61K25GN** 

RF Device Data Freescale Semiconductor, Inc. 

16 

**MRFE6VP61K25N MRFE6VP61K25GN** 

RF Device Data Freescale Semiconductor, Inc. 

17 

**MRFE6VP61K25N MRFE6VP61K25GN** 

RF Device Data Freescale Semiconductor, Inc. 

18 

**MRFE6VP61K25N MRFE6VP61K25GN** 

RF Device Data Freescale Semiconductor, Inc. 

19 

**MRFE6VP61K25N MRFE6VP61K25GN** 

RF Device Data Freescale Semiconductor, Inc. 

20 

## **PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS** 

Refer to the following resources to aid your design process. 

## **Application Notes** 

- AN1907: Solder Reflow Attach Method for High Power RF Devices in Over--Molded Plastic Packages 

- AN1955: Thermal Measurement Methodology of RF Power Amplifiers 

## **Engineering Bulletins** 

- EB212: Using Data Sheet Impedances for RF LDMOS Devices 

## **White Paper** 

- RFPLASTICWP: Designing with Plastic RF Power Transistors 

## **Software** 

- Electromigration MTTF Calculator 

- RF High Power Model 

- .s2p File 

## **Development Tools** 

- Printed Circuit Boards 

## **To Download Resources Specific to a Given Part Number:** 

1. Go to http://www.freescale.com/rf 

2. Search by part number 

3. Click part number link 

4. Choose the desired resource from the drop down menu 

## **REVISION HISTORY** 

The following table summarizes revisions to this document. 

|**Revision**|**Date**|**Description**|
|---|---|---|
|0|Feb. 2015|<br>Initial Release of Data Sheet|
|1|Feb. 2015|<br>Table 2, Maximum Ratings: added Total Device Dissipation, p. 2<br><br>Table 3, Thermal Characteristics: added CW Thermal Resistance, p. 2<br><br>Added Fig. 11, Narrowband Series Equivalent Source and Load Impedance -- 230 MHz, p. 8|
|2|Apr. 2015|<br>Added part number MRFE6VP61K25GN, p. 1<br><br>Added OM--1230G--4L package photo, p. 1, and Mechanical Outline, pp. 18--20|



**MRFE6VP61K25N MRFE6VP61K25GN** 

RF Device Data Freescale Semiconductor, Inc. 

21 

## _**How to Reach Us:**_ 

**Home Page:** freescale.com 

**Web Support:** freescale.com/support 

Information in this document is provided solely to enable system and software implementers to use Freescale products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits based on the information in this document. 

Freescale reserves the right to make changes without further notice to any products herein. Freescale makes no warranty, representation, or guarantee regarding the suitability of its products for any particular purpose, nor does Freescale assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters that may be provided in Freescale data sheets and/or specifications can and do vary in different applications, and actual performance may vary over time. All operating parameters, including “typicals,” must be validated for each customer application by customer’s technical experts. Freescale does not convey any license under its patent rights nor the rights of others. Freescale sells products pursuant to standard terms and conditions of sale, which can be found at the following address: freescale.com/SalesTermsandConditions. 

Freescale and the Freescale logo are trademarks of Freescale Semiconductor, Inc., Reg. U.S. Pat. & Tm. Off. All other product or service names are the property of their respective owners. E 2015 Freescale Semiconductor, Inc. 

**MRFE6VP61K25N MRFE6VP61K25GN** 

RF Device Data Freescale Semiconductor, Inc. 

Document Number: MRFE6VP61K25N 22Rev. 2, 4/2015

Updated at April 10, 2026

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