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MRFE6VP61K25HR6
RF FET Transistor, 133 VDC, 1.333 kW, 1.8 MHz, 600 MHz, NI-1230H-4S
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: NXP
- Product type: RF FETs
- Drain Source Voltage Vds:133VDC; Continuous Drain Current Id:-; Power Dissipation Pd:1.333kW; Operating Frequency Min:1.8MHz; Operating Frequency Max:600MHz; RF Transistor Case:NI-1230;
- MSL: -
- SVHC: No SVHC (27-Jun-2024)
- No. of Pins: 4Pins
- Channel Type: N Channel
- Product Range: -
- Power Dissipation: 1.333kW
- Transistor Mounting: Flange
- Transistor Case Style: NI-1230H-4S
- Operating Frequency Max: 600MHz
- Operating Frequency Min: 1.8MHz
- Drain Source Voltage Vds: 133VDC
- Operating Temperature Max: 225°C
- Continuous Drain Current Id: -
| Delivery and price | |
|---|---|
| Units per pack | 5 |
| Price | 278.12 € |
| Current stock | 100+ |
| Lead time | 30 days |
Datasheet
**Freescale Semiconductor** Technical Data
Document Number: MRFE6VP61K25H Rev. 4.1, 3/2014
## **RF Power LDMOS Transistors** High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs
These high ruggedness devices are designed for use in high VSWR industrial (including laser and plasma exciters), broadcast (analog and digital), aerospace and radio/land mobile applications. They are unmatched input and output designs allowing wide frequency range utilization, between 1.8 and 600 MHz.
## **MRFE6VP61K25HR6 MRFE6VP61K25HR5 MRFE6VP61K25HSR5 MRFE6VP61K25GSR5**
Typical Performance: VDD = 50 Volts, IDQ = 100 mA
**1.8--600 MHz, 1250 W CW, 50 VWIDEBAND WIDEBAND**
**Signal Type P(W)out (MHz)f (dB)Gps (%)** **D 1.8--600 MHz, 1250 W CW, 50 VWIDEBAND RF POWER LDMOS TRANSISTORS** Pulse 1250 Peak 230 24.0 74.0 (100 sec, 20% Duty Cycle) CW 1250 CW 230 22.9 74.6 ~~aso~~ **Application Circuits[(1)] — Typical Performance Frequency Pout Gps** **D (MHz) Signal Type (W) (dB) (%) NI--1230H--4S** 27 CW 1300 27 81 **MRFE6VP61K25HR6/R5** 40 CW 1300 26 85 81.36 CW 1250 27 84 ~~===~~ 87.5--108 CW 1100 24 80 144--148 CW 1250 26 78 170--230 DVB--T 225 25 30 352 Pulse 1250 21.5 66 **NI--1230S--4S MRFE6VP61K25HSR5** (200 sec, 20% Duty Cycle) 352 CW 1150 20.5 68 500 CW 1000 18 58 1. Contact your local Freescale sales office for additional information on specific circuit designs. **Load Mismatch/Ruggedness NI--1230GS--4L MRFE6VP61K25GSR5 Frequency Pout Test (MHz) Signal Type VSWR (W) Voltage Result** 230 Pulse > 65:1 at all 1500 Peak 50 No Device (100 sec, 20% Phase Angles (3 dB Degradation Duty Cycle) Overdrive) ~~ee =~~ Gate A 3 1 Drain A **Features** Unmatched Input and Output Allowing Wide Frequency Range Utilization
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NI--1230S--4S<br>MRFE6VP61K25HSR5<br>NI--1230GS--4L<br>MRFE6VP61K25GSR5<br>=<br>Gate A 3 1 Drain A<br>Gate B 4 2 Drain B<br>(Top View)<br>**----- End of picture text -----**<br>
- Device can be used Single--Ended or in a Push--Pull Configuration
- Qualified Up to a Maximum of 50 VDD Operation
- Characterized from 30 V to 50 V for Extended Power Range
- Suitable for Linear Application with Appropriate Biasing
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Note: The backside of the package is the<br>source terminal for the transistors.<br>**----- End of picture text -----**<br>
- Integrated ESD Protection with Greater Negative Gate--Source Voltage Range for Improved Class C Operation
- Characterized with Series Equivalent Large--Signal Impedance Parameters
**Figure 1. Pin Connections**
- In Tape and Reel. R6 Suffix = 150 Units, 56 mm Tape Width, 13--inch Reel. R5 Suffix = 50 Units, 56 mm Tape Width, 13--inch Reel.
Freescale Semiconductor, Inc., 2010--2014. All rights reserved.
**MRFE6VP61K25HR6 MRFE6VP61K25HR5 MRFE6VP61K25HSR5 MRFE6VP61K25GSR5**
RF Device Data Freescale Semiconductor, Inc.
1
**Table 1. Maximum Ratings**
|**Table 1. Maximum Ratings**|||||
|---|---|---|---|---|
|**Rating**|||**Symbol**<br>**Value**|**Unit**|
|Drain--Source Voltage|||VDSS<br>--0.5, +133|Vdc|
|Gate--Source Voltage|||VGS<br>--6.0, +10|Vdc|
|Storage Temperature Range|||Tstg<br>-- 65 to +150|C|
|Case Operating Temperature|||TC<br>150|C|
|Operating Junction Temperature **(1,2)**|||TJ<br>225|C|
|Total Device Dissipation @ TC= 25C|||PD<br>1333|W|
|Derate above 25C|||6.67|W/C|
|**Table 2. Thermal Characteristics**|||||
|**Characteristic**<br>**Symbol**<br>**Value (2,3)**<br>**Unit**<br>Thermal Resistance, Junction to Case<br>CW: Case Temperature 63C, 1250 W CW, IDQ= 100 mA, 230 MHz<br>RJC<br>0.15<br>C/W<br>Thermal Impedance, Junction to Case<br>Pulse: Case Temperature 66C, 1250 W Pulse, 100sec Pulse Width, 20% Duty Cycle,<br>IDQ= 100 mA, 230 MHz<br>ZJC<br>0.03<br>C/W<br>~~ee~~|||||
|**Table 3. ESD Protection Characteristics**|||||
|**Test Methodology**<br>**Class**<br>Human Body Model (per JESD22--A114)<br>2, passes 3500 V<br>Machine Model (per EIA/JESD22--A115)<br>B, passes 250 V<br>Charge Device Model (per JESD22--C101)<br>IV, passes 4000 V<br>**Table 4. Electrical Characteristics** (TA= 25C unless otherwise noted)<br>**Characteristic**<br>**Symbol**<br>**Min**<br>**Typ**<br>**Max**<br>**Unit**<br>~~ee~~|||||
|**Off Characteristics (4)**|||||
|Gate--Source Leakage Current<br>(VGS= 5 Vdc, VDS= 0 Vdc)<br>IGSS<br>—<br>—<br>1<br>Adc<br>Drain--Source Breakdown Voltage<br>(VGS= 0 Vdc, ID= 100 mA)<br>V(BR)DSS<br>133<br>—<br>—<br>Vdc<br>Zero Gate Voltage Drain Leakage Current<br>(VDS= 50 Vdc, VGS= 0 Vdc)<br>IDSS<br>—<br>—<br>10<br>Adc<br>Zero Gate Voltage Drain Leakage Current<br>(VDS= 100 Vdc, VGS= 0 Vdc)<br>IDSS<br>—<br>—<br>20<br>Adc<br>~~EEE~~|||||
|**On Characteristics**|||||
|Gate Threshold Voltage **(4)**<br>(VDS= 10 Vdc, ID= 1776Adc)<br>VGS(th)<br>1.7<br>2.2<br>2.7<br>Vdc<br>Gate Quiescent Voltage<br>(VDD= 50 Vdc, ID= 100 mAdc, Measured in Functional Test)<br>VGS(Q)<br>1.9<br>2.2<br>2.9<br>Vdc<br>Drain--Source On--Voltage **(4)**<br>(VGS= 10 Vdc, ID= 2 Adc)<br>VDS(on)<br>—<br>0.15<br>—<br>Vdc<br>Forward Transconductance<br>(VDS= 10 Vdc, ID= 30 Adc)<br>gfs<br>_—_<br>28.0<br>_—_<br>S<br>~~aaa~~|||||
|**Dynamic Characteristics (4)**<br>Reverse Transfer Capacitance<br>(VDS= 50 Vdc30 mV(rms)ac @ 1 MHz, VGS= 0 Vdc)<br>Crss<br>—<br>2.8<br>—<br>pF<br>Output Capacitance<br>(VDS= 50 Vdc30 mV(rms)ac @ 1 MHz, VGS= 0 Vdc)<br>Coss<br>—<br>185<br>—<br>pF<br>Input Capacitance<br>(VDS= 50 Vdc, VGS= 0 Vdc30 mV(rms)ac @ 1 MHz)<br>Ciss<br>—<br>562<br>—<br>pF<br>~~ae~~|||||
|1. Continuous use at maximum temperature will affect MTTF.|||||
|2. MTTF calculator available athttp://www.freescale.com/rf<br>.Select Software & Tools/Development Tools/Calculators to access MTTF|||||
|calculators by product.|||||
3. Refer to AN1955, _Thermal Measurement Methodology of RF Power Amplifiers._ Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1955.
4. Each side of device measured separately.
(continued)
**MRFE6VP61K25HR6 MRFE6VP61K25HR5 MRFE6VP61K25HSR5 MRFE6VP61K25GSR5**
RF Device Data Freescale Semiconductor, Inc.
2
**Table 4. Electrical Characteristics** (TA = 25C unless otherwise noted) **(continued)**
|||**Characteristic**|**Symbol**||**Min**|||**Typ**|**Max**|**Unit**|
|---|---|---|---|---|---|---|---|---|---|---|
||**Functional Tests (1)** (In Freescale Test Fixture, 50 ohm system) VDD= 50 Vdc, IDQ= 100 mA, P|||= 100 mA, Pout= 1250 W Peak (250 W Avg.),||= 1250 W Peak (250 W Avg.),||= 1250 W Peak (250 W Avg.),|||
||f = 230 MHz, 100sec Pulse Width, 20% Duty Cycle||||||||||
|Power Gain<br>Gps<br>23.0<br>24.0<br>26.0<br>dB<br>Drain Efficiency<br>D<br>72.5<br>74.0<br>—<br>%<br>Input Return Loss<br>IRL<br>—<br>--14<br>--10<br>dB<br>~~a~~|||||||||||
||**Table 5. Load Mismatch/Ruggedness**|**Table 5. Load Mismatch/Ruggedness** (In Freescale Test Fixture, 50 ohm system) IDQ= 100 mA||||= 100 mA|||||
||**Frequency**||**Pout**||||||||
||**(MHz)**|**Signal Type**<br>**VSWR**|**(W)**||**Test Voltage, V**|||**Test Voltage, VDD**|**Result**||
||230|Pulse<br>> 65:1 at all|1500 Peak|||50|||No Device Degradation||
|||(100sec, 20% Duty Cycle)<br>Phase Angles|(3 dB Overdrive)||||||||
1. Measurements made with device in straight lead configuration before any lead forming operation is applied. Lead forming is used for gull wing (GS) parts.
**MRFE6VP61K25HR6 MRFE6VP61K25HR5 MRFE6VP61K25HSR5 MRFE6VP61K25GSR5**
RF Device Data Freescale Semiconductor, Inc.
3
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**Table 6. MRFE6VP61K25HR6(HSR6) 230 MHz Production Test Circuit Component Designations and Values — Pulse**
|**Part**|**Description**|**Part Number**|**Manufacturer**|
|---|---|---|---|
|C1|20 pF Chip Capacitor|ATC100B200JT500XT|ATC|
|C2, C3, C5|27 pF Chip Capacitors|ATC100B270JT500XT|ATC|
|C4|0.8--8.0 pF Variable Capacitor, Gigatrim|27291SL|Johanson|
|C6, C10|22F, 35 V Tantalum Capacitors|T491X226K035AT|Kemet|
|C7, C11|0.1F Chip Capacitors|CDR33BX104AKYS|AVX|
|C8, C12|220 nF Chip Capacitors|C1812C224K5RACTU|Kemet|
|C9, C13, C21, C25|1000 pF Chip Capacitors|ATC100B102JT50XT|ATC|
|C14|43 pF Chip Capacitor|ATC100B430JT500XT|ATC|
|C15|75 pF Metal Mica|MIN02--002EC750J--F|CDE|
|C16, C17, C18, C19|240 pF Chip Capacitors|ATC100B241JT200XT|ATC|
|C20|6.2 pF Chip Capacitor|ATC100B6R2BT500XT|ATC|
|C22, C23, C24, C26, C27, C28|470F, 63 V Electrolytic Capacitors|MCGPR63V477M13X26--RH|Multicomp|
|Coax1, 2, 3, 4|25Semi Rigid Coax, 2.2Shield Length|UT--141C--25|Micro--Coax|
|L1, L2|5 nH Inductors|A02TKLC|Coilcraft|
|L3, L4|6.6 nH Inductors|GA3093--ALC|Coilcraft|
|R1, R2|10Chip Resistors|CRCW120610R0JNEA|Vishay|
|PCB|0.030,r= 2.55|AD255A|Arlon|
**MRFE6VP61K25HR6 MRFE6VP61K25HR5 MRFE6VP61K25HSR5 MRFE6VP61K25GSR5**
RF Device Data Freescale Semiconductor, Inc.
4
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@ —<br>|<br>eal<br>|<br>eae) @) ©)<br>+ +<br>i | | a<br>+ C H + a T<br>+ +<br>i | | ant<br>i | | -4h<br>| |<br>| HH_| |_|<br>| Hee<br>a aa e al<br>F 4l | | t li<br>mal i a mal<br>+<br>c t 1 oO c t<br>| |<br>er CRO,<br>|<br>i<br>|<br>O i<br>RF<br>OUTPUT<br>Z30<br>C20<br>Z29<br>Microstrip Microstrip Microstrip Microstrip Microstrip<br> <br>COAX3 COAX4<br>VSUPPLY VSUPPLY Description 0.300 0.300 0.300 0.082 0.082<br>C24 Z27 Z28 C28 1.251 0.127 0.116 0.186 0.179<br>C23 C16 C17 C18 C19 C27<br>C22 Z25 C15 Z26 C26<br>Microstrip Z23, Z24 Z25, Z26 Z27, Z28 Z29 Z30 * Line length includes microstrip bends<br>C21 Z23 Z24 C25<br>L3 Z19 Z17 Z21 C14 Z22 Z18 Z20 L4<br>Z15 Z16<br>Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip<br> <br>DUT Description 0.058 0.726 0.507 0.363 0.154 0.507<br> <br>R1 Z11 Z13 Z14 Z12 R2 0.872 0.412 0.371 0.466 0.187 0.104<br>C13 C9<br>L1 L2<br>C12 Z9 C5 Z10 C8 Microstrip Z11*, Z12* Z13, Z14 Z15, Z16 Z17*, Z18* Z19*, Z20* Z21, Z22<br>C11 C7<br>Z7 C4 Z8<br>C10 C6<br>Z5 Z6 Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip<br> <br>BIAS C2 C3 BIAS<br>V Z3 Z4 V Description 0.082 0.082 0.100 0.285 0.285 0.285<br> <br>0.192 0.175 0.170 0.116 0.116 0.108<br>Figure 3. MRFE6VP61K25HR6(HSR6) 230 MHz Production Test Circuit Schematic — Pulse<br>COAX1 COAX2<br>Z2 C1<br>Microstrip Z1 Z2 Z3, Z4 Z5, Z6 Z7, Z8 Z9, Z10<br>Table 7. MRFE6VP61K25HR6(HSR6) 230 MHz Production Test Circuit Microstrips — Pulse<br>Z1<br>RF<br>INPUT<br>**----- End of picture text -----**<br>
**MRFE6VP61K25HR6 MRFE6VP61K25HR5 MRFE6VP61K25HSR5 MRFE6VP61K25GSR5**
RF Device Data Freescale Semiconductor, Inc.
5
## **TYPICAL CHARACTERISTICS**
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**----- Start of picture text -----**<br>
2000 66<br>1000 Ciss P3dB = 61.9 dBm (1553 W) Ideal<br>65<br>P2dB = 61.7 dBm (1472 W)<br>64<br>100 Coss<br>63 P1dB = 61.3 dBm<br>(1333 W)<br>Kf ) 62 PT TAS Actual<br>10 ===ye 61 eea<br>Crss 60 VDD = 50 Vdc, IDQ = 100 mA, f = 230 MHz<br>S Measured with 30 mV(rms)ac @ 1 MHz SS Pulse Width = 100 sec, 20% Duty Cycle<br>1 en VGS = 0 Vdc 59<br>0 10 20 30 40 50 35 36 37 38 39 40 41 42<br>VDS, DRAIN--SOURCE VOLTAGE (VOLTS) Pin, INPUT POWER (dBm) PEAK<br>Note: Each side of device measured separately. Figure 5. Output Power versus Input Power<br>Figure 4. Capacitance versus Drain--Source Voltage<br>26 90 26<br>IDQ = 100 mA, f = 230 MHz<br>VDD = 50 Vdc, IDQ = 100 mA, f = 230 MHz 25 Pulse Width = 100 sec, 20% Duty Cycle<br>25 Pulse Width = 100 sec, 20% Duty Cycle 80<br>24<br>24 He 70 23 eee eee<br>peasy a n 22 SA NONS<br>50 V<br>23 60 21<br>Gps 20<br>45 V<br>22 VY 50 40 V<br>19<br>35 V<br>18<br>21 40<br>TAI D 17 ee VDD = 30 V e<br>20 PAT LL 30 16 po eR<br>100 1000 2000 0 200 400 600 800 1000 1200 1400 1600<br>Pout, OUTPUT POWER (WATTS) PEAK Pout, OUTPUT POWER (WATTS) PEAK<br>Figure 6. Power Gain and Drain Efficiency Figure 7. Power Gain versus Output Power<br>versus Output Power<br>90 26 90<br>--30 _ C<br>35 V 40 V 45 V 50 V 25 _ C<br>80 VDD = 30 V 25 80<br>70 oe 24 PTT TT 85 _ C 70<br>TC = --30 _ C<br>60 ze 23 BK 25 _ C 60<br>n”/77Zann S E IN<br>50 »//ZaGnn 22 Gps ZN. 50<br>85 _ C<br>40 21 40<br>Yt atime<br>30 IDQ = 100 mA, f = 230 MHz 20 VDD = 50 Vdc, IDQ = 100 mA, f = 230 MHz 30<br>Pulse Width = 100 sec, 20% Duty Cycle D Pulse Width = 100 sec, 20% Duty Cycle<br>20 PT ee 19 Eee’ | 20<br>0 200 400 600 800 1000 1200 1400 1600 100 1000 2000<br>Pout, OUTPUT POWER (WATTS) PEAK Pout, OUTPUT POWER (WATTS) PEAK<br>C, CAPACITANCE (pF)<br>, OUTPUT POWER (dBm) PULSED<br>out<br>P<br>, POWER GAIN (dB) , POWER GAIN (dB)<br>ps DRAIN EFFICIENCY (%) ps<br>G D, G<br><br>, POWER GAIN (dB)<br> DRAIN EFFICIENCY (%)D, Gps DRAIN EFFICIENCY (%)D,<br>**----- End of picture text -----**<br>
**Figure 8. Drain Efficiency versus Output Power**
**Figure 9. Power Gain and Drain Efficiency versus Output Power**
**MRFE6VP61K25HR6 MRFE6VP61K25HR5 MRFE6VP61K25HSR5 MRFE6VP61K25GSR5**
RF Device Data Freescale Semiconductor, Inc.
6
## **TYPICAL CHARACTERISTICS**
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10 [9]<br>10 [8]<br>10 [7]<br>10 [6]<br>10 [5]<br>10 [4] =<br>90 110 130 150 170 190 210 230 250<br>TJ, JUNCTION TEMPERATURE (C)<br>This above graph displays calculated MTTF in hours when the device<br>is operated at VDD = 50 Vdc, Pout = 1250 W CW, and D = 74.6%.<br>MTTF calculator available at http://www.freescale.com/rf. Select<br>Software & Tools/Development Tools/Calculators to access MTTF<br>calculators by product.<br>MTTF (HOURS)<br>**----- End of picture text -----**<br>
**Figure 10. MTTF versus Junction Temperature — CW**
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VDD = 50 Vdc, IDQ = 100 mA, Pout = 1250 W Peak<br>f Zsource Zload<br>MHz <br>230 1.29 + j3.54 2.12 + j2.68<br>Zsource = Test circuit impedance as measured from<br>gate to gate, balanced configuration.<br>Zload = Test circuit impedance as measured from<br>drain to drain, balanced configuration.<br>Input Device Output<br>Matching + Under -- Matching<br>Network Test Network<br>50 a7e -- > + : 50 <br>1 Zsource Zload<br>**----- End of picture text -----**<br>
**Figure 11. Series Equivalent Test Circuit Source and Load Impedance — 230 MHz Pulse**
**MRFE6VP61K25HR6 MRFE6VP61K25HR5 MRFE6VP61K25HSR5 MRFE6VP61K25GSR5**
RF Device Data Freescale Semiconductor, Inc.
7
VDD = 50 Vdc, IDQ = 100 mA
|**f**<br>**(MHz)**|**Zsource**<br>**(****)**|**Zload**<br>**(****)**|
|---|---|---|
|1.8 **(1)**|34.4 + j192.0 **(1)**|5.00 - j4.00 **(1)**|
|27|12.5 + j7.00|7.00 + j0.70|
|40|5.75 + j5.06|5.39 + j2.62|
|81.36|4.04 + j5.93|4.89 + j2.95|
|88|2.20 + j6.70|4.90 + j2.90|
|98|2.30 + j6.90|4.10 + j2.50|
|108|2.30 + j7.00|4.40 + j3.60|
|144|1.60 + j5.00|3.90 + j1.50|
|175|1.33 + j3.90|3.50 + j2.50|
|230|1.29 + j3.54|2.12 + j2.68|
|352|0.98 + j1.45|1.82 + j2.05|
|500|0.29 + j1.47|1.79 + j1.80|
1. Simulated data.
Zsource = Test circuit impedance as measured from gate to gate, balanced configuration.
Zload = Test circuit impedance as measured from drain to drain, balanced configuration.
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Input Device Output<br>Matching + Under -- Matching<br>Network Test Network<br>50 50 <br>Lit -- t + l}<br>Zsource Zload<br>**----- End of picture text -----**<br>
**Figure 12. Source and Load Impedances Optimized for IRL, Power and Efficiency — Push--Pull**
**MRFE6VP61K25HR6 MRFE6VP61K25HR5 MRFE6VP61K25HSR5 MRFE6VP61K25GSR5**
RF Device Data Freescale Semiconductor, Inc.
8
## **87.5--108 MHz FM BROADCAST REFERENCE CIRCUIT**
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COAX1<br>aN : i<br>C15 C16<br>C1<br>°o Fo 900000, of} fH H _ C19 C18 °<br>©LI ;©© @® © | 1Q°° s e C17 s C) + C) + u :8<br>° S<br>B1 © 0 ©} je COAX3 Js<br>= [ooserce0e C3 } U | ease ) L4 Ol 4] q]<br>i: Fy R1 L2 a a RSove C7 ial 000<br>C8<br>C4 C9<br>T1<br>[Ti — L1 = I \ enti \Goe LI N LU 7<br>C10<br>; i, peel. L a<br>P3) IR S So oo C11 IH 300<br>C5<br>°6 fe) = foxe) (ny H eb | I 3<br>© C2 fe)5 L3 | L5 Tta C12 °<br>z BasseeseeTooe] PO + ; + f<br>C24<br>Q1<br># freescale’ oTP] fp s SAP<br>C21 C20<br>@ MRFE6VP61K25H Rev. 1 semiconductor Ps C22 sod EI] C23 | LI }<br>©] [ig Pt FR A G Ago<br>Note: Component numbers C6, C13 and<br>C14 are not used.<br>COAX2<br>**----- End of picture text -----**<br>
**Figure 13. MRFE6VP61K25HR6(HSR6) 87.5--108 MHz FM Broadcast Reference Circuit Component Layout**
**Table 8. MRFE6VP61K25HR6(HSR6) 87.5--108 MHz FM Broadcast Reference Circuit Component Designations and Values**
|**Table 8. MRFE6VP61K25HR6(HSR6) 87.5--108 MHz FM Broadcast Reference Circuit Component Designations**<br>**and Values**|**Table 8. MRFE6VP61K25HR6(HSR6) 87.5--108 MHz FM Broadcast Reference Circuit Component Designations**|**Table 8. MRFE6VP61K25HR6(HSR6) 87.5--108 MHz FM Broadcast Reference Circuit Component Designations**|**Table 8. MRFE6VP61K25HR6(HSR6) 87.5--108 MHz FM Broadcast Reference Circuit Component Designations**|
|---|---|---|---|
|**Part**|**Description**|**Part Number**|**Manufacturer**|
|B1<br>Long Ferrite Bead|Long Ferrite Bead|2743021447|Fair--Rite|
|C1<br>6.8|F, 50 V Chip Capacitor|C4532X7R1H685K|TDK|
|C2<br>27 pF Chip Capacitor|27 pF Chip Capacitor|ATC100B270JT500XT|ATC|
|C3, C7, C8, C9, C10,<br>C11, C12<br>1000 pF Chip Capacitors|1000 pF Chip Capacitors|ATC100B102JT50XT|ATC|
|C4<br>39 pF Mica Capacitor|39 pF Mica Capacitor|MIN02--002DC390J--F|Cornell Dubilier|
|C5<br>3 pF Chip Capacitor|3 pF Chip Capacitor|ATC100B3R0CT500XT|ATC|
|C15, C22<br>10K pF Chip Capacitors|10K pF Chip Capacitors|ATC200B103KT50XT|ATC|
|C16, C23<br>1F, 100 V Chip Capacitors|F, 100 V Chip Capacitors|C3225JB2A105KT|TDK|
|C17, C24<br>10|F, 100 V Chip Capacitors|C5750X7S2A106MT|TDK|
|C18, C19, C20, C21<br>470|F, 63 V Electrolytic Capacitors|MCGPR63V477M13X26--RH|Multicomp|
|L1<br>39 nH Inductor|39 nH Inductor|1812SMS--39NJLC|Coilcraft|
|L2, L3<br>2.5 nH Inductors|2.5 nH Inductors|A01TKLC|Coilcraft|
|L4, L5<br>7 Turn, #16 AWG, ID = 0.3|7 Turn, #16 AWG, ID = 0.3Inductors|Copper Wire||
|Q1<br>RF Power LDMOS Transistor|RF Power LDMOS Transistor|MRFE6VP61K25HR6|Freescale|
|R1<br>11|, 1/4 W Chip Resistor|CRCW120611R0FKEA|Vishay|
|T1<br>Balun|Balun|TUI--9|Comm Concepts|
|Coax1, Coax2<br>Flex Cables (12|Flex Cables (12) 5.9|TC--12|Comm Concepts|
|Coax3<br>Coax Cable, Quickform 50|Coax Cable, Quickform 50, 8.7|SUCOFORM 250--01|Huber+Suhner|
|PCB<br>0.030|0.030,r= 3.5|TC--350|Arlon|
|Heatsink<br>NI--1230 Copper Heatsink|NI--1230 Copper Heatsink|C193X280T970|Machine Shop|
**MRFE6VP61K25HR6 MRFE6VP61K25HR5 MRFE6VP61K25HSR5 MRFE6VP61K25GSR5**
RF Device Data Freescale Semiconductor, Inc.
9
**==> picture [327 x 676] intentionally omitted <==**
**----- Start of picture text -----**<br>
+ +<br>+ +<br>iv<br>Po So<br>fo<br>O o<br>f<br>RF<br>OUTPUT<br>C5<br>COAX3<br>DD DD<br>V V<br>C18 C20<br>C7 C8 C9 C10 C11 C12<br>C19 C21<br>C17 C24<br>C16 C23<br>C15 COAX1 COAX2 C22<br>C4<br>B2 B3<br>L2 L3<br>T1<br>C3 C2<br>R1<br>B1 L1<br>C1<br>RF<br>GS INPUT<br>V<br>**----- End of picture text -----**<br>
**MRFE6VP61K25HR6 MRFE6VP61K25HR5 MRFE6VP61K25HSR5 MRFE6VP61K25GSR5**
RF Device Data Freescale Semiconductor, Inc.
10
## **TYPICAL CHARACTERISTICS — 87.5--108 MHz FM BROADCAST REFERENCE CIRCUIT**
**==> picture [255 x 175] intentionally omitted <==**
**----- Start of picture text -----**<br>
30 90<br>108 MHz 98 MHz<br>29 80<br>LH ee<br>28 87.5 MHz 70<br>27 HR Gps P e 60<br>ae A \<br>26 50<br>eM<br>D<br>25 108 MHz 40<br>98 MHz<br>24 AATfees Aen| ee 30<br>87.5 MHz VDD = 50 Vdc, IDQ = 200 mA<br>23 UP 20<br>40 100 1000 2000<br>Pout, OUTPUT POWER (WATTS)<br>, POWER GAIN (dB)<br>ps DRAIN EFFICIENCY (%)<br>G D,<br><br>**----- End of picture text -----**<br>
**Figure 15. Power Gain and Drain Efficiency versus Output Power**
**==> picture [307 x 211] intentionally omitted <==**
**----- Start of picture text -----**<br>
VDD = 50 Vdc, IDQ = 200 mA, Pout = 1100 W CW<br>f Zsource Zload<br>MHz <br>87.5 2.20 + j6.70 4.90 + j2.90<br>98 2.30 + j6.90 4.10 + j2.50<br>108 2.30 + j7.00 4.40 + j3.60<br>Zsource = Test circuit impedance as measured from<br>gate to gate, balanced configuration.<br>Zload = Test circuit impedance as measured from<br>drain to drain, balanced configuration.<br>Input Device Output<br>Matching + Under -- Matching<br>Network Test Network<br>50 50 <br>p| a kI -- SL p rL + l i<br>Zsource Zload<br>**----- End of picture text -----**<br>
**Figure 16. Series Equivalent 87.5--108 MHz FM Broadcast Reference Circuit Source and Load Impedance**
**MRFE6VP61K25HR6 MRFE6VP61K25HR5 MRFE6VP61K25HSR5 MRFE6VP61K25GSR5**
RF Device Data Freescale Semiconductor, Inc.
11
## **144--148 MHz REFERENCE CIRCUIT**
**==> picture [468 x 346] intentionally omitted <==**
**----- Start of picture text -----**<br>
COAX1<br>4) ‘2 @ @ yO O00Od YOoo0o” 00 @<br>O F jfoo000000 5 Pi EN \ | ie)<br>C15 C16 C17<br>[| ° : 2<br>C1 C18 +<br>COAX3<br>° fe) U e)<br>B1<br>| &) q ° 3<br>C3 [poeccooooeo 00 te b<br>L2<br>R1<br>o0000 U a C7<br>c o0 0 C20 C8<br>C19<br>C9<br>T1 C4<br>lor 50h 77 —<—-_N | T Y<br>Yop I{( eu t e C10<br>L1 C5 C11<br>o| 7 , | Ca co —<br>C12<br>C6<br>000000 Bin le cl 5°<br>ob | 88<br>‘o S 5 ereOO ome)ome)<br>COO0000000C0000 9990005 O89ere 0R 3 . ooo<br>C14<br>Sd . e y o le | Be s<br>p< f reescale om ) d —_Too 0000 000" 0000000000°<br>semiconductor<br>C13<br>© MRFE6VP61K25H Rev. 2 © © © @<br>NL<br>*C7, C8, C9, C10, C11, and C12 are mounted vertically.<br>Note: Component number C2 is not used.<br>COAX2<br>**----- End of picture text -----**<br>
**Figure 17. MRFE6VP61K25HR6(HSR6) 144--148 MHz Reference Circuit Component Layout**
**Table 9. MRFE6VP61K25HR6(HSR6) 144--148 MHz Reference Circuit Component Designations and Values**
|~~a~~||||
|---|---|---|---|
|**Part**<br>~~a~~<br>~~a~~|**Description**|**Part Number**|**Manufacturer**|
|B1<br>~~a~~<br>~~a~~<br>~~ee~~|95, 100 MHz Long Ferrite Bead|2743021447|Fair--Rite|
|C1<br>~~a~~<br>~~ee~~|6.8F, 50 V Chip Capacitor|C4532X7R1H685K|TDK|
|C3, C5, C7, C8, C9, C10,<br>C11, C12, C13, C15<br>~~ee~~<br>~~ee~~|1000 pF Chip Capacitors|ATC100B102KT50XT|ATC|
|C4<br>~~ee~~|5.6 pF Chip Capacitor|ATC100B5R6CT500XT|ATC|
|C6<br>~~ee~~<br>~~QO~~<br>~~es~~|470 pF Chip Capacitor<br>~~QO~~<br>~~GO~~|ATC100B471JT200XT<br>~~QO~~<br>~~GO~~|ATC<br>~~QO~~<br>~~GO~~|
|C14, C16<br>~~es~~<br>~~es~~|1F, 100 V Chip Capacitors<br>~~GO~~<br>~~GO~~|C3225JB2A105KT<br>~~GO~~<br>~~GO~~|TDK<br>~~GO~~<br>~~GO~~|
|C17<br>~~es~~<br>~~es~~<br>~~es~~|2.2F, 100 V Chip Capacitor<br>~~GO~~<br>~~GO~~<br>|HMK432B7225KM--T<br>~~GO~~<br>~~GO~~<br>~~OO~~<br>|Taiyo Yuden<br>~~GO~~<br>~~GO~~<br>~~OO~~<br>|
|C18<br>~~es~~<br>~~sO~~<br>~~es~~|470F, 100 V Electrolytic Capacitor<br>~~GO~~<br>~~sO~~<br>|MCGPR100V477M16X32--RH<br>~~GO~~<br>~~sO~~<br>~~OO~~<br>|Multicomp<br>~~GO~~<br>~~sO~~<br>~~OO~~<br>|
|C19, C20<br>~~es~~<br>~~es~~|15 pF Chip Capacitors<br>~~GO~~<br>|ATC100B150JT500XT<br>~~OO~~<br>~~GO~~<br>|ATC<br>~~OO~~<br>~~GO~~<br>|
|L1<br>~~es~~<br>~~es~~<br>~~es~~|43 nH Inductor<br>~~GO~~<br>~~GO~~<br>|B10TJLC<br>~~OO~~<br>~~GO~~<br>~~GO~~<br>|Coilcraft<br>~~OO~~<br>~~GO~~<br>~~GO~~<br>|
|L2<br><br>~~es~~<br>~~es~~<br>~~es~~|7 Turn, #14 AWG, ID = 0.4Inductor<br>~~GO~~<br>~~GO~~<br>~~GO~~<br>|Handwound<br>~~GO~~<br>~~GO~~<br>~~GO~~<br>|Freescale<br>~~GO~~<br>~~GO~~<br>~~GO~~<br>|
|R1<br><br>~~es~~<br>~~es~~<br>~~es~~|11, 1/4 W Chip Resistor<br>~~GO~~<br>~~GO~~<br>~~**GO**~~|CRCW120611R0FKEA<br>~~GO~~<br>~~GO~~<br>~~**GO**~~|Vishay<br>~~GO~~<br>~~GO~~<br>~~**GO**~~|
|T1<br><br>~~es~~<br>~~es~~|Balun<br>~~GO~~<br>~~**GO**~~|TUI--9<br>~~GO~~<br>~~**GO**~~|Comm Concepts<br>~~GO~~<br>~~**GO**~~|
|Coax1, Coax2<br><br>~~es~~<br>~~sf~~|Flex Cables, 10.2, 4.7<br>~~**GO**~~<br>~~sf~~|TC--12<br>~~**GO**~~<br>~~sf~~|Comm Concepts<br>~~**GO**~~<br>~~sf~~|
|Coax3<br>~~sf~~|Coax Cable, 50, 6.7<br>~~sf~~|SUCOFORM250--01<br>~~sf~~|Huber+Suhner<br>~~sf~~|
|PCB<br>~~RG~~|0.030”,r= 3.50<br>~~RG~~|TC--350<br>~~RG~~|Arlon<br>~~RG~~|
**MRFE6VP61K25HR6 MRFE6VP61K25HR5 MRFE6VP61K25HSR5 MRFE6VP61K25GSR5**
RF Device Data Freescale Semiconductor, Inc.
12
**==> picture [261 x 673] intentionally omitted <==**
**----- Start of picture text -----**<br>
+<br>.<br>a l<br>PLC|<br>ae<br>) 4<br>LoS,<br>7<br>Pp<br>RF<br>OUTPUT<br>C4 DD<br>V<br>C18<br>COAX3<br>C17<br>C16<br>C15<br>C14<br>C7 C8 C9 C10 C11 C12<br>C20 C13<br>C19<br>L2<br>C5 C6<br>COAX1 COAX2<br>T1<br>C3 C2<br>R1<br>B1 L1<br>C1<br>RF<br>INPUT<br>GS<br>V<br>**----- End of picture text -----**<br>
**==> picture [10 x 347] intentionally omitted <==**
**----- Start of picture text -----**<br>
Figure 18. MRFE6VP61K25HR6(HSR6) 144--148 MHz Reference Circuit Schematic<br>**----- End of picture text -----**<br>
**MRFE6VP61K25HR6 MRFE6VP61K25HR5 MRFE6VP61K25HSR5 MRFE6VP61K25GSR5**
RF Device Data Freescale Semiconductor, Inc.
13
## **TYPICAL CHARACTERISTICS — 144--148 MHz REFERENCE CIRCUIT**
**==> picture [307 x 181] intentionally omitted <==**
**----- Start of picture text -----**<br>
VDD = 50 Vdc, IDQ = 200 mA, Pout = 1100 W CW<br>f Zsource Zload<br>MHz <br>144 1.6 + j5.0 3.9 + j1.5<br>Zsource = Test circuit impedance as measured from<br>gate to gate, balanced configuration.<br>Zload = Test circuit impedance as measured from<br>drain to drain, balanced configuration.<br>Input Device Output<br>Matching + Under -- Matching<br>Network Test Network<br>50 50 <br>j| eJ4 li -- te t p + L Li ki<br>Zsource Zload<br>**----- End of picture text -----**<br>
**Figure 19. Series Equivalent 144--148 MHz Reference Circuit Source and Load Impedance**
**==> picture [259 x 388] intentionally omitted <==**
**----- Start of picture text -----**<br>
31 90<br>VDD = 50 Vdc, IDQ = 2500 mA, f = 144 MHz<br>30 Po 80<br>29 Gps 70<br>h too<br>28 — 60<br>to n<br>27 nil 50<br>26 TTT 40<br>D<br>25 ttt ee 30<br>24 ett 20<br>—<br>50 100 1000 2000<br>Pout, OUTPUT POWER (WATTS)<br>Figure 20. Power Gain and Drain Efficiency<br>versus Output Power<br>0<br>--20 VDD = 50 Vdc 1 ee<br>--30--20 f1 = 143.9 MHz, f2 = 144.1 MHzTwo--Tone Measurement AHETTET |<br>IDQ = 2500 mA<br>--40<br>--50 3rd Order 4500 mA<br>--60 a pet |al| Ne ee aJa<br>--70 3rd Order<br>7th Order<br>--80 ee —Te rere |<br>--90 2 7 4500 mA T |<br>7th Order 5th Order<br>--100 PP e r | ee |<br>1 10 100 1000 2000<br>Pout, OUTPUT POWER (WATTS) PEP<br>, POWER GAIN (dB)<br>ps DRAIN EFFICIENCY (%)<br>G D,<br><br>IMD, INTERMODULATION DISTORTION (dBc)<br>**----- End of picture text -----**<br>
**Figure 21. Intermodulation Distortion Products versus Output Power**
**MRFE6VP61K25HR6 MRFE6VP61K25HR5 MRFE6VP61K25HSR5 MRFE6VP61K25GSR5**
RF Device Data Freescale Semiconductor, Inc.
14
## **HARMONIC MEASUREMENTS**
**==> picture [439 x 246] intentionally omitted <==**
**----- Start of picture text -----**<br>
Marker 1 [T1] RBW 3 MHz RF Att 10 dB<br>Ref Lvl 1.018 kW VBW 3 MHz<br>1.5 E 04 W 144.00000000 MHz SWT 5 ms Unit W<br>77.7 dB Offset B 1 [T1] 1.018 kW A<br>1 144.00000000 MHz<br>ree 1 [T1] --42.07 dB =<br>144.00501002 MHz<br>2 [T1] --32.87 dB<br>288.00501002 MHz<br>3 [T1] --37.26 dB<br>1 VIEW 432.00501002 MHz 1SA 144 MHz, 1 kW<br>e e 4 [T1] --38.89 dB<br>H2 H3 H4 H5<br>2 576.00501002 MHz<br>3 4 EXT --42 dB --33 dB --37 dB --39 dB<br>eeft 1 at. “1 -—_+—}—} +]<br>ITE LTC<br>Pre) re ry es aut se<br>PE tLELELELEE,<br>TELE LELLLEL,<br>Center 525 MHz 95 MHz/ Span 950 MHz<br>**----- End of picture text -----**<br>
**Figure 22. 144 MHz Harmonics @ 1 kW**
**MRFE6VP61K25HR6 MRFE6VP61K25HR5 MRFE6VP61K25HSR5 MRFE6VP61K25GSR5**
RF Device Data Freescale Semiconductor, Inc.
15
## **PACKAGE DIMENSIONS**
**MRFE6VP61K25HR6 MRFE6VP61K25HR5 MRFE6VP61K25HSR5 MRFE6VP61K25GSR5**
RF Device Data Freescale Semiconductor, Inc.
16
**MRFE6VP61K25HR6 MRFE6VP61K25HR5 MRFE6VP61K25HSR5 MRFE6VP61K25GSR5**
RF Device Data Freescale Semiconductor, Inc.
17
**MRFE6VP61K25HR6 MRFE6VP61K25HR5 MRFE6VP61K25HSR5 MRFE6VP61K25GSR5**
RF Device Data Freescale Semiconductor, Inc.
18
**MRFE6VP61K25HR6 MRFE6VP61K25HR5 MRFE6VP61K25HSR5 MRFE6VP61K25GSR5**
RF Device Data Freescale Semiconductor, Inc.
19
**MRFE6VP61K25HR6 MRFE6VP61K25HR5 MRFE6VP61K25HSR5 MRFE6VP61K25GSR5**
RF Device Data Freescale Semiconductor, Inc.
20
**MRFE6VP61K25HR6 MRFE6VP61K25HR5 MRFE6VP61K25HSR5 MRFE6VP61K25GSR5**
RF Device Data Freescale Semiconductor, Inc.
21
## **PRODUCT DOCUMENTATION AND SOFTWARE**
Refer to the following documents and software to aid your design process.
## **Application Notes**
- AN1955: Thermal Measurement Methodology of RF Power Amplifiers
## **Engineering Bulletins**
- EB212: Using Data Sheet Impedances for RF LDMOS Devices
## **Software**
- Electromigration MTTF Calculator
- RF High Power Model
- .s2p File
For Software, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software & Tools tab on the part’s Product Summary page to download the respective tool.
## **REVISION HISTORY**
The following table summarizes revisions to this document.
|**Revision**|**Date**|**Description**|
|---|---|---|
|0|Nov. 2010|<br>Initial Release of Data Sheet|
|1|Jan. 2011|<br>Fig. 1, Pin Connections, corrected pin 4 label from RFout/VGSto RFin/VGS, p. 1|
|2|May 2012|<br>Added Application Circuits Typical Performance table, p. 1<br><br>Capable of Handling VSWR bullet: corrected 1250 Peak Output Power value to 1500 and converted to table,<br>pp. 1, 3<br><br>Table 1, Max Ratings: final DC test specification for Drain--Source Voltage changed from +125 to +133 Vdc,<br>p. 2<br><br>Table 3, ESD Protection Characteristics: added the device’s ESD passing level as applicable to each ESD<br>class, p. 2<br><br>Table 4, Off Characteristics: final DC test specification for Drain--Source Breakdown Voltage minimum value<br>changed from 125 to 133 Vdc, p. 2<br><br>Table 4, On Characteristics: added Forward Transconductance, p. 2<br><br>Fig. 10, MTTF versus Junction Temperature -- CW: MTTF end temperature on graph changed to match<br>maximum operating junction temperature, p. 7<br><br>Added Fig. 12, Source and Load Impedances Optimized for IRL, Power and Efficiency — Push--pull, p. 8<br><br>Added Fig. 13, 87.5--108 MHz FM Broadcast Reference Circuit Component Layout, p. 9<br><br>Added Table 9, 87.5--108 MHz FM Broadcast Reference Circuit Component Designations and Values, p. 9<br><br>Added Fig. 14, 87.5--108 MHz FM Broadband Reference Circuit Schematic, p. 10<br><br>Added Fig. 15, Power Gain and Drain Efficiency versus Output Power (87.5--108 MHz), p. 11<br><br>Added Fig. 16, Series Equivalent 87.5--108 MHz FM Broadcast Reference Circuit Source and Load<br>Impedance, p. 11<br><br>Added Fig. 17, 144--148 MHz Reference Circuit Component Layout, p. 12<br><br>Added Table 9, 144--148 MHz Reference Circuit Component Designations and Values, p. 12<br><br>Added Fig. 18, 144--148 MHz Reference Circuit Schematic, p. 13<br><br>Added Fig. 19, Series Equivalent 144--148 MHz Reference Circuit Source and Load Impedance, p. 14<br><br>Added Fig. 20, Power Gain and Drain Efficiency versus Output Power (144--148 MHz), p. 14<br><br>Added Fig. 21, Intermodulation Distortion Products versus Output Power (144--148 MHz), p. 14<br><br>Added Fig. 22, 144 MHz Harmonics @ 1 kW, p. 15|
|3|Oct. 2012|<br>Added part number MRFE6VP61K25GSR5, p. 1<br><br>Added 2282--02 (NI--1230S--4 Gull) package isometric, p. 1, and Mechanical Outline, p. 20, 21|
|4|Mar. 2013|<br>MRFE6VP61K25HR6 tape and reel option replaced with MRF6VP61K25HR5 per PCN15551.<br><br>Replaced Case Outline 98ASB16977C, Issue E with Issue F, p. 16, 17. Changed dimension C from<br>0.150--0.200to CC 0.170--0.190.<br><br>Replaced Case Outline 98ARB18247C, Issue F with Issue G, p. 18, 19. Changed dimension C from<br>0.150--0.200to CC 0.170--0.190. Added minimum Z dimension R0.00.<br><br>Replaced Case Outline 98ASA00459D, Issue O with Issue A, p. 20, 21. Changed dimension C from<br>0.150--0.200to CC 0.170--0.190. Corrected positional tolerance for dimension S.|
|4.1|Mar. 2014|<br>MRFE6VP61K25HR5 part added to data sheet device box, p. 1<br><br>MRFE6VP61K25HSR6 tape and reel option replaced with MRFE6VP61K25HSR5 per PCN15551. (Note: this<br>copy updates the copy from Rev. 4 Revision History to accurately reflect the part number replacement in this<br>data sheet as described in PCN15551.)|
## **MRFE6VP61K25HR6 MRFE6VP61K25HR5 MRFE6VP61K25HSR5 MRFE6VP61K25GSR5**
RF Device Data Freescale Semiconductor, Inc.
22
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**MRFE6VP61K25HR6 MRFE6VP61K25HR5 MRFE6VP61K25HSR5 MRFE6VP61K25GSR5** & freescale
Document Number: MRFE6VP61K25HRF Device Data Rev. 4.1, 3/2014Freescale Semiconductor, Inc.
23
Updated at April 10, 2026
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