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MRFE6VP5600HR6
RF FET Transistor, 130 V, 1.667 kW, 1.8 MHz, 600 MHz, NI-1230
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- Manufacturer: NXP
- Product type: RF FETs
- Drain Source Voltage Vds:130V; Continuous Drain Current Id:-; Power Dissipation Pd:1.667kW; Operating Frequency Min:1.8MHz; Operating Frequency Max:600MHz; RF Transistor Case:NI-12
- MSL: MSL 3 - 168 hours
- SVHC: No SVHC (27-Jun-2024)
- No. of Pins: 4Pins
- Channel Type: N Channel
- Product Range: -
- Power Dissipation: 1.667kW
- Transistor Mounting: Flange
- Transistor Case Style: NI-1230
- Operating Frequency Max: 600MHz
- Operating Frequency Min: 1.8MHz
- Drain Source Voltage Vds: 130V
- Operating Temperature Max: 225°C
- Continuous Drain Current Id: -
| Delivery and price | |
|---|---|
| Units per pack | 150 |
| Price | 179.56 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
**Freescale Semiconductor** Technical Data Document Number: MRFE6VP5600H Rev. 1, 1/2011 ## **RF Power Field Effect Transistors** High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs These high ruggedness devices are designed for use in high VSWR industrial (including laser and plasma exciters), broadcast (analog and digital), aerospace and radio/land mobile applications. They are unmatched input and output designs allowing wide frequency range utilization, between 1.8 and 600 MHz. - Typical Performance: VDD = 50 Volts, IDQ = 100 mA |**Signal Type**|**Pout**<br>**(W)**|**f**<br>**(MHz)**|**Gps**<br>**(dB)**|η**D**<br>**(%)**|**IRL**<br>**(dB)**| |---|---|---|---|---|---| |Pulsed (100μsec,<br>20% Duty Cycle)|600 Peak|230|25.0|74.6|--18| |CW|600 Avg.|230|24.6|75.2|--17| ## **MRFE6VP5600HR6 MRFE6VP5600HSR6** ## **1.8--600 MHz, 600 W CW, 50 V LATERAL N--CHANNEL BROADBAND RF POWER MOSFETs** - Capable of Handling a Load Mismatch of 65:1 VSWR, @ 50 Vdc, 230 MHz, at all Phase Angles, Designed for Enhanced Ruggedness - 600 Watts Pulsed Peak Power, 20% Duty Cycle, 100 μsec ## **Features** - Unmatched Input and Output Allowing Wide Frequency Range Utilization **==> picture [95 x 27] intentionally omitted <==** **----- Start of picture text -----**<br> CASE 375D--05, STYLE 1<br>NI--1230<br>MRFE6VP5600HR6<br>**----- End of picture text -----**<br> - Device can be used Single--Ended or in a Push--Pull Configuration - Qualified Up to a Maximum of 50 VDD Operation - Characterized from 30 V to 50 V for Extended Power Range - Suitable for Linear Application with Appropriate Biasing - Integrated ESD Protection with Greater Negative Gate--Source Voltage Range for Improved Class C Operation - Characterized with Series Equivalent Large--Signal Impedance Parameters - RoHS Compliant - In Tape and Reel. R6 Suffix = 150 Units, 56 mm Tape Width, 13 inch Reel. For R5 Tape and Reel options, see p. 12. **==> picture [94 x 27] intentionally omitted <==** **----- Start of picture text -----**<br> CASE 375E--04, STYLE 1<br>NI--1230S<br>MRFE6VP5600HSR6<br>**----- End of picture text -----**<br> ## **PARTS ARE PUSH--PULL** **Table 1. Maximum Ratings** |**Table 1. Maximum Ratings**|||| |---|---|---|---| |**Rating**|**Symbol**|**Value**|**Unit**| |Drain--Source Voltage|VDSS|--0.5, +130|Vdc| |Gate--Source Voltage|VGS|--6.0, +10|Vdc| |Storage Temperature Range|Tstg|-- 65 to +150|°C| |Case Operating Temperature|TC|150|°C| |Total Device Dissipation @ TC= 25°C<br>Derate above 25°C|PD|1667<br>8.33|W<br>W/°C| |Operating Junction Temperature **(1,2)**|TJ|225|°C| **==> picture [144 x 83] intentionally omitted <==** **----- Start of picture text -----**<br> RFin/VGS 3 1 RFout/VDS<br>RFin/VGS 4 2 RFout/VDS<br>(Top View)<br>**----- End of picture text -----**<br> **Figure 1. Pin Connections** **Table 2. Thermal Characteristics** |**Table 2. Thermal Characteristics**|||| |---|---|---|---| |**Characteristic**|**Symbol**|**Symbol**<br>**Value (2,3)**<br>**Unit**|**Unit**| |Thermal Resistance, Junction to Case<br>Case Temperature 68°C, 600 W Pulsed, 100μsec Pulse Width, 20% Duty Cycle, 100 mA, 230 MHz<br>Case Temperature 60°C, 600 W CW, 100 mA, 230 MHz|ZθJC<br>RθJC|JC<br>JC<br>0.022<br>0.12<br>°C/W|C/W| 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 3. Refer to AN1955, _Thermal Measurement Methodology of RF Power Amplifiers._ Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1955. > © Freescale Semiconductor, Inc., 2010--2011. All rights reserved. **MRFE6VP5600HR6 MRFE6VP5600HSR6** ~~ee poodfreescale”~~ **MRFE6VP5600HR6 MRFE6VP5600HSR6** RF Device Data Freescale Semiconductor 1 **Table 3. ESD Protection Characteristics** |**Table 3. ESD Protection Characteristics**|**Table 3. ESD Protection Characteristics**||||| |---|---|---|---|---|---| |**Test Methodology**|||**Class**||| |Human Body Model (per JESD22--A114)|||2 (Minimum)||| |Machine Model (per EIA/JESD22--A115)|||B (Minimum)||| |Charge Device Model (per JESD22--C101)|||IV (Minimum)||| |**Table 4. Electrical Characteristics** (TA= 25°C unless otherwise noted)|||||| |**Characteristic**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**| |**Off Characteristics (1)**|||||| |Gate--Source Leakage Current<br>(VGS= 5 Vdc, VDS= 0 Vdc)|IGSS|—|—|1|μAdc| |Drain--Source Breakdown Voltage<br>(VGS= 0 Vdc, ID= 100 mA)|V(BR)DSS|130|—|—|Vdc| |Zero Gate Voltage Drain Leakage Current<br>(VDS= 50 Vdc, VGS= 0 Vdc)|IDSS|—|—|10|μAdc| |Zero Gate Voltage Drain Leakage Current<br>(VDS= 100 Vdc, VGS= 0 Vdc)|IDSS|—|—|20|μAdc| |**On Characteristics**|||||| |Gate Threshold Voltage **(1)**<br>(VDS= 10 Vdc, ID= 960μAdc)|VGS(th)|1.7|2.2|2.7|Vdc| |Gate Quiescent Voltage<br>(VDD= 50 Vdc, ID= 100 mAdc, Measured in Functional Test)|VGS(Q)|2.0|2.5|3.0|Vdc| |Drain--Source On--Voltage **(1)**<br>(VGS= 10 Vdc, ID= 2 Adc)|VDS(on)|—|0.26|—|Vdc| |**Dynamic Characteristics (1)**|||||| |Reverse Transfer Capacitance<br>(VDS= 50 Vdc±30 mV(rms)ac @ 1 MHz, VGS= 0 Vdc)|Crss|—|1.60|—|pF| |Output Capacitance<br>(VDS= 50 Vdc±30 mV(rms)ac @ 1 MHz, VGS= 0 Vdc)|Coss|—|129|—|pF| |Input Capacitance<br>(VDS= 50 Vdc, VGS= 0 Vdc±30 mV(rms)ac @ 1 MHz)|Ciss|—|342|—|pF| |**Functional Tests**(In Freescale Test Fixture, 50 ohm system) VDD= 50 Vdc, IDQ= 100 mA, Pout= 600 W Peak (120 W Avg.), f =<br>Pulsed, 100μsec Pulse Width, 20% Duty Cycle|||||230 MHz,| |Power Gain|Gps|23.5|25.0|26.5|dB| |Drain Efficiency|ηD|73.5|74.6|—|%| |Input Return Loss|IRL|—|--18|--12|dB| 1. Each side of device measured separately. **MRFE6VP5600HR6 MRFE6VP5600HSR6** RF Device Data Freescale Semiconductor 2 **==> picture [285 x 248] intentionally omitted <==** **----- Start of picture text -----**<br> VBIAS +<br>C10 C11 C12 C13<br>COAX1 R1<br>Z11<br>Z3 Z5 Z7 Z9 L1 Z13<br>RF<br>INPUT Z1 Z2 C2<br>C4 C5<br>Z4 Z6 Z8 Z10 L2 Z14<br>C1<br>C3<br>Z12<br>COAX2 R2<br>VBIAS +<br>C6 C7 C8 C9<br>**----- End of picture text -----**<br> **==> picture [493 x 378] intentionally omitted <==** **----- Start of picture text -----**<br> + + + VSUPPLY<br>L3 C22 C23 C24 C25<br>Z19<br>Z17 COAX3<br>Z15 Z21 Z23 Z25 C16 Z27 Z29<br>C17<br>RF<br>OUTPUT<br>Z31 Z32<br>DUT C14 C15 C20<br>C21<br>Z16 Z22 Z24 Z26 Z28 Z30<br>C18<br>Z18<br>COAX4<br>Z20 C19<br>L4<br>+ + + VSUPPLY<br>C26 C27 C28 C29<br>Z1 0.192″ x 0.082″ Microstrip Z11*, Z12* 0.872″ x 0.058″ Microstrip Z23, Z24 1.251″ x 0.300″ Microstrip<br>Z2 0.175″ x 0.082″ Microstrip Z13, Z14 0.412″ x 0.726″ Microstrip Z25, Z26 0.127″ x 0.300″ Microstrip<br>Z3, Z4 0.170″ x 0.100″ Microstrip Z15, Z16 0.371″ x 0.507″ Microstrip Z27, Z28 0.058″ x 0.300″ Microstrip<br>Z5, Z6 0.116″ x 0.285″ Microstrip Z17*, Z18* 0.466″ x 0.363″ Microstrip Z29, Z30 0.058″ x 0.300″ Microstrip<br>Z7, Z8 0.116″ x 0.285″ Microstrip Z19*, Z20* 1.187″ x 0.154″ Microstrip Z31 0.186″ x 0.082″ Microstrip<br>Z9, Z10 0.108″ x 0.285″ Microstrip Z21, Z22 0.104″ x 0.507″ Microstrip Z32 0.179″ x 0.082″ Microstrip<br>* Line length includes microstrip bends<br>**----- End of picture text -----**<br> **Figure 1. MRFE6VP5600HR6(HSR6) Test Circuit Schematic -- Pulsed** **MRFE6VP5600HR6 MRFE6VP5600HSR6** RF Device Data Freescale Semiconductor 3 **==> picture [438 x 293] intentionally omitted <==** **----- Start of picture text -----**<br> C23 C24 C25<br>C10 C11 C12<br>C13<br>C22<br>COAX1 COAX3<br>R1 L3<br>C2 C4 L1 C5 C14 C15 C16C17<br>C3 L2 C18 C20<br>C1 C19 C21<br>R2 L4<br>COAX2 COAX4<br>C26<br>C9<br>C6 C7 [C8]<br>MRFE6VP5600H C27 C28 C29<br>Rev. 1<br>**----- End of picture text -----**<br> **Figure 2. MRFE6VP5600HR6(HSR6) Test Circuit Component Layout -- Pulsed** **Table 5. MRFE6VP5600HR6(HSR6) Test Circuit Component Designations and Values -- Pulsed** |**Part**|**Description**|**Part Number**|**Manufacturer**| |---|---|---|---| |C1|12 pF Chip Capacitor|ATC100B120JT500XT|ATC| |C2, C3|27 pF Chip Capacitors|ATC100B270JT500XT|ATC| |C4|0.8--8.0 pF Variable Capacitor, Gigatrim|27291SL|Johanson| |C5|33 pF Chip Capacitor|ATC100B330JT500XT|ATC| |C6, C10|22μF, 35 V Tantalum Capacitors|T491X226K035AT|Kemet| |C7, C11|0.1μF Chip Capacitors|CDR33BX104AKYS|AVX| |C8, C12|220 nF Chip Capacitors|C1812C224K5RACTU|Kemet| |C9, C13, C22, C26|1000 pF Chip Capacitors|ATC100B102JT50XT|ATC| |C14|36 pF Chip Capacitor|ATC100B360JT500XT|ATC| |C15|51 pF Chip Capacitor|ATC100B510GT500XT|ATC| |C16, C17, C18, C19|240 pF Chip Capacitors|ATC100B241JT200XT|ATC| |C20|39 pF Chip Capacitor|ATC100B390JT500XT|ATC| |C21|10 pF Chip Capacitor|ATC100B100JT500XT|ATC| |C23, C24, C25, C27, C28, C29|470μF, 63 V Electrolytic Capacitors|MCGPR63V477M13X26--RH|Multicomp| |Coax1, 2, 3, 4|25ΩSemi Rigid Coax, 2.2″Long|UT--141C--25|Micro Coax| |L1, L2|5 nH Inductors|A02TKLC|Coilcraft| |L3, L4|6.6 nH Inductors|GA3093--ALC|Coilcraft| |R1, R2|10ΩChip Resistors|CRCW120610R0JNEA|Vishay| |PCB|0.030″,εr= 2.55|AD255A|Arlon| **MRFE6VP5600HR6 MRFE6VP5600HSR6** RF Device Data Freescale Semiconductor 4 ## **TYPICAL CHARACTERISTICS** **==> picture [238 x 175] intentionally omitted <==** **----- Start of picture text -----**<br> 1000<br>Ciss<br>100 Coss<br>Measured with ±30 mV(rms)ac @ 1 MHz<br>VGS = 0 Vdc<br>10<br>Crss<br>1<br>0 10 20 30 40 50<br>VDS, DRAIN--SOURCE VOLTAGE (VOLTS)<br>C, CAPACITANCE (pF)<br>**----- End of picture text -----**<br> **Note:** Each side of device measured separately. **Figure 3. Capacitance versus Drain--Source Voltage** **==> picture [232 x 173] intentionally omitted <==** **----- Start of picture text -----**<br> 64<br>VDD = 50 Vdc, IDQ = 100 mA, f = 230 MHz<br>63 Pulse Width = 100 μsec, 20% Duty Cycle<br>62<br>P3dB = 58.3 dBm (679 W)<br>Ideal<br>61<br>P2dB = 58.2 dBm (664 W)<br>60<br>P1dB = 58.0 dBm<br>59 (632 W)<br>Actual<br>58<br>57<br>31 32 33 34 35 36 37<br>Pin, INPUT POWER (dBm) PULSED<br>, OUTPUT POWER (dBm) PULSED<br>out<br>P<br>**----- End of picture text -----**<br> **Figure 4. Pulsed Output Power versus Input Power** **==> picture [501 x 424] intentionally omitted <==** **----- Start of picture text -----**<br> 27 90 27<br>26 VPulse Width = 100DD = 50 Vdc, IDQ μ = 100 mA, f = 230 MHzsec, 20% Duty Cycle 80 26 VPulse Width = 100DD = 50 Vdc, IDQ μ = 100 mA, f = 230 MHzsec, 20% Duty Cycle<br>25<br>25 70<br>24<br>24 Gps 60 23<br>22<br>23 50 50 V<br>21<br>45 V<br>22 40 20<br>40 V<br>ηD 19<br>21 30 35 V<br>18<br>VDD = 30 V<br>20 20 17<br>40 100 1000 0 100 200 300 400 500 600 700<br>Pout, OUTPUT POWER (WATTS) PULSED Pout, OUTPUT POWER (WATTS) PULSED<br>Figure 5. Pulsed Power Gain and Drain Efficiency Figure 6. Pulsed Power Gain versus<br>versus Output Power Output Power<br>90 27 90<br>80 VDD = 30 V 35 V 40 V 45 V 50 V 26 VPulse Width = 100DD = 50 Vdc, IDQ μ = 100 mA, f = 230 MHzsec, 20% Duty Cycle 25 _ C 80<br>85 _ C<br>70 25 --30 _ C 70<br>Gps<br>60 24 TC = --30 _ C 60<br>50 23 25 _ C 50<br>40 22 40<br>ηD<br>30 VDD = 50 Vdc, IDQ = 100 mA, f = 230 MHz 21 85 _ C 30<br>Pulse Width = 100 μsec, 20% Duty Cycle<br>20 20 20<br>0 100 200 300 400 500 600 700 40 100 1000<br>Pout, OUTPUT POWER (WATTS) PULSED Pout, OUTPUT POWER (WATTS) PULSED<br>Figure 7. Pulsed Drain Efficiency versus Figure 8. Pulsed Power Gain and Drain Efficiency<br>Output Power versus Output Power<br>, POWER GAIN (dB) , POWER GAIN (dB)<br>ps DRAIN EFFICIENCY (%) ps<br>G D, G<br>η<br>, POWER GAIN (dB)<br> DRAIN EFFICIENCY (%)ηD, Gps DRAIN EFFICIENCY (%)ηD,<br>**----- End of picture text -----**<br> **MRFE6VP5600HR6 MRFE6VP5600HSR6** RF Device Data Freescale Semiconductor 5 ## **TYPICAL CHARACTERISTICS** **==> picture [239 x 232] intentionally omitted <==** **----- Start of picture text -----**<br> 10 [9]<br>10 [8]<br>10 [7]<br>10 [6]<br>10 [5]<br>10 [4]<br>90 110 130 150 170 190 210 230 250<br>TJ, JUNCTION TEMPERATURE (°C)<br>This above graph displays calculated MTTF in hours when the device<br>is operated at VDD = 50 Vdc, Pout = 600 W Avg., and ηD = 75.2%.<br>MTTF calculator available at http://www.freescale.com/rf. Select<br>Software & Tools/Development Tools/Calculators to access MTTF<br>calculators by product.<br>MTTF (HOURS)<br>**----- End of picture text -----**<br> **Figure 9. MTTF versus Junction Temperature — CW** **MRFE6VP5600HR6 MRFE6VP5600HSR6** RF Device Data Freescale Semiconductor 6 **==> picture [364 x 471] intentionally omitted <==** **----- Start of picture text -----**<br> EY, OO PP RAG<br>Zsource<br>Zo = 10 Ω<br>f = 230 MHz<br>of ZMK YES Oke LTT<br>PY fe Kos SOS Somme PEE<br>PEERX, f = 230 MHz SSE) Eco<br>BOLO XT aaeee<br>PY [LI] IPOSRR Zload SS ACEH<br>SH EE IT.SSS AATEE<br>|WA EROKTS RIERELEKG EE Boo© SSROSES SIHTK EE<br>ohef, ALYsEEEEES TIER LRNRSICA SST<br>/oh fey!Beé SERPETERARE ELKOOOS LKQ RSSSSE<br>a OEETRE PRR en<br>f Aee Ey panei Mama nace cetera<br>[ AEI TEDL RR<br>= Hh lise tee aeatentiar ec emma cease KEEPER LS<br>fel AiPPT eet Petar se<br>Seeviceriiitiiregeewesteticis] um @Mpmnaee SHEER Ho<br>Bee Cee et ||<br>ANGE COMPONE (<br>[FECES] EE aetre cobeneh ope sees-¢-) FEECe gusceerupens<br>iesSuseesseteccncccccs2 meerauattiatuma Coe emueReLttLi pmeaescAAeneOo<br> OO1. Ene er Se<br>VDD = 50 Vdc, IDQ = 100 mA, Pout = 600 W Peak<br>f Zsource Zload<br>MHz Ω Ω<br>230 1.78 + j5.45 2.75 + j5.30<br>Zsource = Test circuit impedance as measured from<br>gate to gate, balanced configuration.<br>Zload = Test circuit impedance as measured from<br>drain to drain, balanced configuration.<br>Input Device Output<br>Matching + Under -- Matching<br>Network Test Network<br>-- +<br>Zsource Zload<br>**----- End of picture text -----**<br> **Figure 10. Series Equivalent Source and Load Impedance** **MRFE6VP5600HR6 MRFE6VP5600HSR6** RF Device Data Freescale Semiconductor 7 ## **PACKAGE DIMENSIONS** **==> picture [489 x 597] intentionally omitted <==** **MRFE6VP5600HR6 MRFE6VP5600HSR6** RF Device Data Freescale Semiconductor 8 **==> picture [504 x 601] intentionally omitted <==** **MRFE6VP5600HR6 MRFE6VP5600HSR6** RF Device Data Freescale Semiconductor 9 **==> picture [505 x 588] intentionally omitted <==** **MRFE6VP5600HR6 MRFE6VP5600HSR6** RF Device Data Freescale Semiconductor 10 **==> picture [504 x 635] intentionally omitted <==** **MRFE6VP5600HR6 MRFE6VP5600HSR6** RF Device Data Freescale Semiconductor 11 ## **PRODUCT DOCUMENTATION AND SOFTWARE** Refer to the following documents and software to aid your design process. ## **Application Notes** - AN1955: Thermal Measurement Methodology of RF Power Amplifiers ## **Engineering Bulletins** - EB212: Using Data Sheet Impedances for RF LDMOS Devices ## **Software** - Electromigration MTTF Calculator - RF High Power Model - .s2p File For Software, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software & Tools tab on the part’s Product Summary page to download the respective tool. ## **R5 TAPE AND REEL OPTION** R5 Suffix = 50 Units, 56 mm Tape Width, 13 inch Reel. The R5 tape and reel option for MRFE6VP5600H and MRFE6VP5600HS parts will be available for 2 years after release of MRFE6VP5600H and MRFE6VP5600HS. Freescale Semiconductor, Inc. reserves the right to limit the quantities that will be delivered in the R5 tape and reel option. At the end of the 2 year period customers who have purchased these devices in the R5 tape and reel option will be offered MRFE6VP5600H and MRFE6VP5600HS in the R6 tape and reel option. ## **REVISION HISTORY** The following table summarizes revisions to this document. |**Revision**|**Date**|**Description**| |---|---|---| |0|Dec. 2010|•<br>Initial Release of Data Sheet| |1|Jan. 2011|•<br>Fig. 1, Pin Connections, corrected pin 4 label from RFout/VGSto RFin/VGS, p. 1| **MRFE6VP5600HR6 MRFE6VP5600HSR6** RF Device Data Freescale Semiconductor 12 **==> picture [504 x 59] intentionally omitted <==** ## _**How to Reach Us:**_ **Home Page:** www.freescale.com ## **Web Support:** http://www.freescale.com/support ## **USA/Europe or Locations Not Listed:** Freescale Semiconductor, Inc. Technical Information Center, EL516 2100 East Elliot Road Tempe, Arizona 85284 1--800--521--6274 or +1--480--768--2130 www.freescale.com/support ## **Europe, Middle East, and Africa:** Freescale Halbleiter Deutschland GmbH Technical Information Center Schatzbogen 7 81829 Muenchen, Germany +44 1296 380 456 (English) +46 8 52200080 (English) +49 89 92103 559 (German) +33 1 69 35 48 48 (French) www.freescale.com/support ## **Japan:** Freescale Semiconductor Japan Ltd. Headquarters ARCO Tower 15F 1--8--1, Shimo--Meguro, Meguro--ku, Tokyo 153--0064 Japan 0120 191014 or +81 3 5437 9125 support.japan@freescale.com ## **Asia/Pacific:** Freescale Semiconductor China Ltd. Exchange Building 23F No. 118 Jianguo Road Chaoyang District Beijing 100022 China +86 10 5879 8000 support.asia@freescale.com ## _**For Literature Requests Only:**_ Freescale Semiconductor Literature Distribution Center 1--800--441--2447 or +1--303--675--2140 Fax: +1--303--675--2150 LDCForFreescaleSemiconductor@hibbertgroup.com Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. Freescale Semiconductor reserves the right to make changes without further notice to any products herein. Freescale Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Freescale Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters that may be provided in Freescale Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals”, must be validated for each customer application by customer’s technical experts. Freescale Semiconductor does not convey any license under its patent rights nor the rights of others. Freescale Semiconductor products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Freescale Semiconductor product could create a situation where personal injury or death may occur. Should Buyer purchase or use Freescale Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold Freescale Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Freescale Semiconductor was negligent regarding the design or manufacture of the part. Freescale t and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2010--2011. All rights reserved. **MRFE6VP5600HR6 MRFE6VP5600HSR6** RF Device DataDocument Number: MRFE6VP5600H Freescale SemiconductorRev. 1, 1/2011 13
Updated at April 10, 2026
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