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MRFE6VP5150GNR1
RF FET, 139V, 225DEG C, 952W
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- Manufacturer: NXP
- Product type: RF FETs
- No. of Pins: 4Pins
- Channel Type: N Channel
- Power Dissipation: 952W
- RF Transistor Case: TO-270WB
- Transistor Mounting: Flange
- Power Dissipation Pd: 952W
- Transistor Case Style: TO-270WB
- Operating Frequency Max: 600MHz
- Operating Frequency Min: 1.8MHz
- Drain Source Voltage Vds: 139V
- Operating Temperature Max: 225°C
| Delivery and price | |
|---|---|
| Units per pack | 500 |
| Price | 32.75 € |
| Current stock | 10+ |
| Lead time | 7 days |
Datasheet
**Freescale Semiconductor** Technical Data
Document Number: MRFE6VP5150N Rev. 1, 7/2014
## **RF Power LDMOS Transistors** High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs
These high ruggedness devices are designed for use in high VSWR industrial (including laser and plasma exciters), broadcast (analog and digital), aerospace and radio/land mobile applications. They are unmatched input and output designs allowing wide frequency range utilization, between 1.8 and 600 MHz.
## **MRFE6VP5150NR1 MRFE6VP5150GNR1**
## **1.8–600 MHz, 150 W CW, 50 V WIDEBAND RF POWER LDMOS TRANSISTORS**
**Typical Performance:** VDD = 50 Vdc
|**Frequency**<br>**(MHz)**<br>**Signal Type**<br>87.5–108 **(1,3)**<br>CW<br>230 **(2)**<br>CW<br>230 **(2)**<br>Pulse<br>(100sec, 20%<br>Duty Cycle)<br>**Load Mismatch/Ruggedness**<br>**Frequency**<br>**(MHz)**<br>**Signal Type**<br>**VSWR**<br>~~———~~||**Pout**<br>**(W)**<br>179<br>150<br>150 Peak<br>**Pin**<br>**(W)**||**Gps**<br>**(dB)**<br>22.5<br>26.3<br>26.1<br>**Test**<br>**Voltage**|**D**<br>**(%)**<br>74.6<br>72.0<br>70.3<br>**Result**|
|---|---|---|---|---|---|
|98 **(1)**<br>CW<br>> 65:1||3.0||50|No Device|
|at all Phase||(3 dB|||Degradation|
|Angles||Overdrive)||||
|230 **(2)**<br>Pulse||0.62 Peak||||
|(100sec, 20%<br>Duty Cycle)||(3 dB<br>Overdrive)||||
1. Measured in 87.5–108 MHz broadband reference circuit.
2. Measured in 230 MHz narrowband test circuit.
3. The values shown are the minimum measured performance numbers across the indicated frequency range.
## **Features**
- Wide Operating Frequency Range
- Extreme Ruggedness
- Unmatched Input and Output Allowing Wide Frequency Range Utilization
- Integrated Stability Enhancements
- Low Thermal Resistance
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TO--270WB--4<br>PLASTIC<br>MRFE6VP5150NR1<br>TO--270WBG--4<br>PLASTIC<br>MRFE6VP5150GNR1<br>**----- End of picture text -----**<br>
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Gate A 3 2 Drain A<br>‘ia :<br>Gate B 4 1 Drain B<br>{ Leap<br>(Top View)<br>Note: Exposed backside of the package is<br>the source terminal for the transistors.<br>Figure 1. Pin Connections<br>**----- End of picture text -----**<br>
- Integrated ESD Protection Circuitry
- In Tape and Reel. R1 Suffix = 500 Units, 44 mm Tape Width, 13--inch Reel.
**MRFE6VP5150NR1 MRFE6VP5150GNR1** ~~=freescale~~
Freescale Semiconductor, Inc., 2014. All rights reserved.
RF Device Data Freescale Semiconductor, Inc.
1
**Table 1. Maximum Ratings**
|**Table 1. Maximum Ratings**|**Table 1. Maximum Ratings**|**Table 1. Maximum Ratings**|
|---|---|---|
|**Rating**<br>**Symbol**<br>**Value**<br>**Unit**<br>Drain--Source Voltage<br>VDSS<br>–0.5, +133<br>Vdc<br>Gate--Source Voltage<br>VGS<br>–6.0, +10<br>Vdc<br>Storage Temperature Range<br>Tstg<br>–65 to +150<br>C<br>Case Operating Temperature Range<br>TC<br>–40 to +150<br>C<br>Operating Junction Temperature Range **(1,2)**<br>TJ<br>–40 to +225<br>C<br>Total Device Dissipation @ TC= 25C<br>Derate above 25C<br>PD<br>952<br>4.76<br>W<br>W/C<br>~~ete~~|||
|**Table 2. Thermal Characteristics**|||
|**Characteristic**<br>**Symbol**<br>**Value (2,3)**<br>**Unit**<br>Thermal Resistance, Junction to Case<br>CW: Case Temperature 80C, 150 W CW, 50 Vdc, IDQ(A+B)= 100 mA, 230 MHz<br>RJC<br>0.21<br>C/W<br>Thermal Impedance, Junction to Case<br>Pulse: Case Temperature 66C, 150 W Peak, 100sec Pulse Width,<br>20% Duty Cycle, 50 Vdc, IDQ(A+B)= 100 mA, 230 MHz<br>ZJC<br>0.04<br>C/W<br>~~=a~~|||
|**Table 3. ESD Protection Characteristics**|||
|**Test Methodology**<br>**Class**<br>Human Body Model (per JESD22--A114)<br>2, passes 2500 V<br>Machine Model (per EIA/JESD22--A115)<br>B, passes 250 V<br>Charge Device Model (per JESD22--C101)<br>IV, passes 1200 V<br>**Table 4. Moisture Sensitivity Level**<br>**Test Methodology**<br>**Rating**<br>**Package Peak Temperature**<br>**Unit**<br>Per JESD22--A113, IPC/JEDEC J--STD--020<br>3<br>260<br>C<br>~~a~~|||
|**Table 5. Electrical Characteristics** (TA= 25C unless otherwise noted)|||
|**Characteristic**<br>**Symbol**<br>**Min**<br>**Typ**<br>**Max**||**Unit**|
|**Off Characteristics (4)**|||
|Gate--Source Leakage Current<br>(VGS= 5 Vdc, VDS= 0 Vdc)<br>IGSS<br>—<br>—<br>1<br>Adc<br>Drain--Source Breakdown Voltage<br>(VGS= 0 Vdc, ID= 50 mAdc)<br>V(BR)DSS<br>133<br>139<br>—<br>Vdc<br>Zero Gate Voltage Drain Leakage Current<br>(VDS= 50 Vdc, VGS= 0 Vdc)<br>IDSS<br>—<br>—<br>5<br>Adc<br>Zero Gate Voltage Drain Leakage Current<br>(VDS= 100 Vdc, VGS= 0 Vdc)<br>IDSS<br>—<br>—<br>10<br>Adc<br>~~EE~~|||
|**On Characteristics**|||
|Gate Threshold Voltage **(4)**<br>(VDS= 10 Vdc, ID= 480Adc)<br>VGS(th)<br>1.8<br>2.4<br>2.8<br>Vdc<br>Gate Quiescent Voltage<br>(VDD= 50 Vdc, ID= 100 mAdc, Measured in Functional Test)<br>VGS(Q)<br>2.3<br>2.8<br>3.3<br>Vdc<br>Drain--Source On--Voltage **(4)**<br>(VGS= 10 Vdc, ID= 1 Adc)<br>VDS(on)<br>—<br>0.26<br>—<br>Vdc<br>~~SS~~|||
|1. Continuous use at maximum temperature will affect MTTF.|||
|2. MTTF calculator available athttp://www.freescale.com/rf<br>.Select Software & Tools/Development Tools/Calculators to access|||
|MTTF calculators by product.|||
3. Refer to AN1955, _Thermal Measurement Methodology of RF Power Amplifiers._ Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1955.
4. Each side of device measured separately.
(continued)
**MRFE6VP5150NR1 MRFE6VP5150GNR1**
RF Device Data Freescale Semiconductor, Inc.
2
**Table 5. Electrical Characteristics** (TA = 25C unless otherwise noted) **(continued)**
|**Table 5. Electrical Characteristics** (TA = 25C unless otherwise noted)A = 25C unless otherwise noted)= 25C unless otherwise noted)C unless otherwise noted)C unless otherwise noted)**(continued)**||||
|---|---|---|---|
|**Characteristic**<br>**Symbol**<br>**Min**<br>**Typ**||**Max**|**Unit**|
|**Dynamic Characteristics (1)**||||
|Reverse Transfer Capacitance<br>Crss<br>—<br>0.8||—|pF|
|(VDS= 50 Vdc30 mV(rms)ac @ 1 MHz, VGS= 0 Vdc)||||
|Output Capacitance<br>Coss<br>—<br>45.4||—|pF|
|(VDS= 50 Vdc30 mV(rms)ac @ 1 MHz, VGS= 0 Vdc)||||
|Input Capacitance<br>Ciss<br>—<br>96.7||—|pF|
|(VDS= 50 Vdc, VGS= 0 Vdc30 mV(rms)ac @ 1 MHz)||||
|**Functional Tests (2)** (In Freescale Test Fixture, 50 ohm system) VDD= 50 Vdc, IDQ(A+B)= 100 mA, Pout= 150 W Peak (30 W Avg.),||||
|f = 230 MHz, 100sec Pulse Width, 20% Duty Cycle||||
|Power Gain<br>Gps<br>25.0<br>26.1<br>27.5<br>dB<br>Drain Efficiency<br>D<br>68.0<br>70.3<br>—<br>%<br>Input Return Loss<br>IRL<br>—<br>–16<br>–9<br>dB<br>**Load Mismatch/Ruggedness**(In Freescale Test Fixture) 50 ohm system, IDQ(A+B)= 100 mA<br>**Frequency**<br>**(MHz)**<br>**Signal Type**<br>**VSWR**<br>**Pin**<br>**(W)**<br>**Test Voltage, VDD**<br>**Result**<br>230<br>Pulse<br>(100sec, 20% Duty Cycle)<br>> 65:1<br>at all Phase Angles<br>0.62 Peak<br>(3 dB Overdrive)<br>50<br>No Device Degradation<br>1. Each side of device measured separately.<br>2. Measurements made with device in straight lead configuration before any lead forming operation is applied. Lead forming is used for gull wing<br>(GN) parts.<br>~~SS~~<br>~~ee~~<br>~~ee ee~~||||
**MRFE6VP5150NR1 MRFE6VP5150GNR1**
RF Device Data Freescale Semiconductor, Inc.
3
## **TYPICAL CHARACTERISTICS**
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1.06<br>Cississ 1.05 300 mA VDD = 50 Vdc<br>1.04 IDQ(A+B) = 100 mA<br>1.03 | ow N\ | of<br>Cossoss 1.02 800 mA<br>1.01<br>1300 mA<br>1<br>(|<br>0.99 ee<br>0.98<br>C rss<br>0.97<br>le esNN<br>0.96<br>a<br>0.95<br>ee—————— 0.94 ssa<br>30 40 50 --50 --25 0 25 50 75 100<br>TC, CASE TEMPERATURE (C)<br>IDQ (mA) Slope (mV/ C)<br>100 –2.466<br>300 –2.058<br>800 –2.015<br>1300 –1.877<br>Figure 3. Normalized VGS versus Quiescent<br>Current and Case Temperature<br>10 [8]<br>== I D = 3.36 Amps VDD = 50 Vdc<br>10 [7] PRANSS<br>HSER<br>10 [6] PERO 4.14 Amps SSSEEE<br>4.97 Amps<br>a SS<br>10 [5] C a S<br>————<br>Ee ee ee ee ee ee ee ee eee<br>10 [4] Pi tT t>_ TT tet tT tT Et dT tT ff<br>90 110 130 150 170 190 210 230 250<br>TJ, JUNCTION TEMPERATURE (C)<br>Note: MTTF value represents the total cumulative operating time<br>under indicated test conditions.<br>MTTF calculator available at http:/www.freescale.com/rf. Select<br>Software & Tools/Development Tools/Calculators to access MTTF<br>calculators by product.<br>GS(Q)<br>NORMALIZED V<br>MTTF (HOURS)<br>**----- End of picture text -----**<br>
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300<br>Cississ<br>100<br>_ ES<br>Cossoss<br>10<br>a, a Rs(|<br>SSS<br>1 C rss<br>|<br>SSS Measured with SSS 30 mV(rms)ac @ 1 MHz SS<br>V GS = 0 Vdc<br>0.1 7 es ee——————<br>0 10 20 30 40 50<br>VDS, DRAIN--SOURCE VOLTAGE (VOLTS)<br>Note: Each side of device measured separately.<br>C, CAPACITANCE (pF)<br>**----- End of picture text -----**<br>
**Figure 2. Capacitance versus Drain--Source Voltage**
**Figure 4. MTTF versus Junction Temperature -- CW**
**MRFE6VP5150NR1 MRFE6VP5150GNR1**
RF Device Data Freescale Semiconductor, Inc.
4
## **230 MHz NARROWBAND PRODUCTION TEST FIXTURE**
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00000000000° 4) eceeesioocccocc00 C3 == C5 4) 2200000000 (f) 0000000000000000(4)— 0000 Loy 'e)<br>o o8 —yy |e4 MRFE6VP5150N — r e C27 I C29<br>oooooo o o li | B1 C7 Rev. 2 C21 C23 L L<br>© 00004 [oc00000000<br>O° anoo rer im Romemomemomememememememenenenenonemenenenenenenemenonenene)<br>:° C1 @ eer 0 FS ° D57619 ° C25 6 “<br>°° 00 0/f °° oooooo| [ETEP jo7<br>°° COAX1 L1 C12 °° °000000 L3 Sb |°° COAX3<br>°° 3 oO ° °3 oo000003 fe)° ©<br>°3 0000 chDd C16<br>a) ‘ C9 im C14<br>° Y b000000000000000<br>° ez<br>Ti°000000 %8 OW C10 l] I} C20C18 ny= | 000000<br>Ns aTT] —— | Leg| TSa<br>000000°° jw® C11 l] | C19 lal 000000 C31<br>° y p000000000000000<br>8 Ne ri C15<br>°° xy% oo0oo° LB2)° C17<br>°° 3}° 000000 °8<br>°°8 COAX2 L2 C13 oodO°°° 000000°8 000000] L4 _EPFi fey lofe)6jo C26 COAX4<br>°°° C2 0)o6 |/BS 5000 CT44 ° ° °°Q 000000000000000000000000000000—<br>© 0004 fo000000000 9<br>oo ?<br>oo(ooar° E 5t B2 —LLsltye.)? C8 __ P — C22 C24 T C28 Ta\f C30<br>000000000 © (#) 0000/00l0000000000 C4 C6 (F) ® cccceccccccccc00(#) ooo °> $o(4)<br>CUT OUT AREA<br>**----- End of picture text -----**<br>
**Figure 5. MRFE6VP5150NR1 Narrowband Test Circuit Component Layout — 230 MHz**
**MRFE6VP5150NR1 MRFE6VP5150GNR1**
RF Device Data Freescale Semiconductor, Inc.
5
## **230 MHz NARROWBAND PRODUCTION TEST FIXTURE**
**Table 6. MRFE6VP5150NR1 Narrowband Test Circuit Component Designations and Values — 230 MHz**
|**Part**<br>~~eG~~<br>~~ee~~|**Description**<br>~~eG~~<br>~~G~~|**Part Number**<br>~~eG~~|**Manufacturer**<br>~~eG~~|
|---|---|---|---|
|B1, B2<br>~~eG~~<br>~~ee~~|Small Ferrite Beads, Surface Mount<br>~~eG~~<br>~~G~~|2743019447<br>~~eG~~|Fair-Rite<br>~~eG~~|
|C1, C2<br>~~ee~~<br>~~GG~~|22F, 35 V Tantalum Capacitors<br>~~G~~<br>~~GG~~|T491X226K035AT<br>~~GG~~|Kemet<br>~~GG~~|
|C3, C4, C23, C24<br>~~GC~~|0.1F Chip Capacitors<br>~~GC~~|CDR33BX104AKWS<br>~~GC~~|AVX<br>~~GC~~|
|C5, C6<br>~~GG~~|220 nF Chip Capacitors<br>~~GG~~|C1812C224K5RACTU<br>~~GG~~|Kemet<br>~~GG~~|
|C7, C8<br>~~GC~~|2.2F Chip Capacitors<br>~~GC~~|C1825C225J5RACTU<br>~~GC~~|Kemet<br>~~GC~~|
|C9<br>~~GO~~|2.2 pF Chip Capacitor<br>~~GO~~|ATC100B2R2JT500XT<br>~~GO~~|ATC<br>~~GO~~|
|C10, C11<br>~~GG~~|18 pF Chip Capacitors<br>~~GG~~|ATC100B180JT500XT<br>~~GG~~|ATC<br>~~GG~~|
|C12, C13<br>~~GC~~|330 pF Chip Capacitors<br>~~GC~~|ATC100B331JT200XT<br>~~GC~~|ATC<br>~~GC~~|
|C14, C15<br>~~GC~~<br>~~CC~~|39 pF Chip Capacitors<br>~~GC~~<br>~~CC~~|ATC100B390JT500XT<br>~~GC~~<br>~~CC~~|ATC<br>~~GC~~<br>~~CC~~|
|C16, C17<br>~~CC~~<br>~~Ge~~|15 pF Chip Capacitors<br>~~CC~~<br>~~Ge~~|ATC100B150JT500XT<br>~~CC~~<br>~~Ge~~|ATC<br>~~CC~~<br>~~Ge~~|
|C18, C19<br>~~Ge~~<br>~~GO~~|1000 pF Chip Capacitors<br>~~Ge~~<br>~~GO~~|ATC100B102JT50XT<br>~~Ge~~<br>~~GO~~|ATC<br>~~Ge~~<br>~~GO~~|
|C20<br>~~GG~~|82 pF Chip Capacitor<br>~~GG~~|ATC100B820JT500XT<br>~~GG~~|ATC<br>~~GG~~|
|C21, C22<br>~~GG~~<br>~~Ce~~|0.10F Chip Capacitors<br>~~GG~~<br>~~Ce~~|C1812F104K1RACTU<br>~~GG~~<br>~~Ce~~|Kemet<br>~~GG~~<br>~~Ce~~|
|C25, C26<br>~~Ce~~<br>~~GG~~|2.2F Chip Capacitors<br>~~Ce~~<br>~~GG~~|2225X7R225KT3AB<br>~~Ce~~<br>~~GG~~|ATC<br>~~Ce~~<br>~~GG~~|
|C27, C28, C29, C30<br>~~GG~~<br>~~GG~~|470F, 63 V Electrolytic Capacitors<br>~~GG~~<br>~~GG~~|MCGPR63V477M13X26-RH<br>~~GG~~<br>~~GG~~|Multicomp<br>~~GG~~<br>~~GG~~|
|C31<br>~~GC~~|36 pF Chip Capacitor<br>~~GC~~|ATC100B360JT500XT<br>~~GC~~|ATC<br>~~GC~~|
|Coax1, 2, 3, 4<br>~~GG~~|25SemiRigid Coax, 2.4<br>~~GG~~|UT-141C-25<br>~~GG~~|Micro-Coax<br>~~GG~~|
|L1, L2<br>~~GC~~|3 Turns, 12 nH Inductors<br>~~GC~~|GA3094-ALC<br>~~GC~~|Coilcraft<br>~~GC~~|
|L3, L4<br>~~GO~~|4 Turns, 17.5 nH Inductors<br>~~GO~~|GA3095-ALC<br>~~GO~~|Coilcraft<br>~~GO~~|
|PCB<br>~~CG~~|Arlon AD255A, 0.030,r= 2.55<br>~~CG~~|D57619<br>~~CG~~|MTL<br>~~CG~~|
**MRFE6VP5150NR1 MRFE6VP5150GNR1**
RF Device Data Freescale Semiconductor, Inc.
6
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|<br>Eh<br>C 4 C i<br>C H C i<br>th 4h<br>aaa eal<br>eal eal<br>| |<br>PTHR _] | | | [H_|]<br>i I i<br>ay G es<br>c i] i] "<br>| -t —_f | +}—L_}*-_]<br>+ l! | | t l<br>F h F h<br>4 e al<br>) 8<br>F n F h<br>II<br>RF<br>OUTPUT<br>Z31<br>Z30 C31 Microstrip Microstrip Microstrip Microstrip Microstrip<br> <br>0.230 0.230 0.230 0.082 0.082<br>DD DD Description<br>V+ C29 COAX3 COAX4 V + C30 1.090 0.093 0.144 0.262 0.102<br>+ C27 + C28<br>C25 Z28 C20 Z29 C26 Microstrip Z24, Z25 Z26, Z27 Z28, Z29 Z30 Z31 * Line length include microstrip bends<br>C23 C24<br>Z26 Z27<br>C21 C22<br>C18 C19<br>Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip<br>Z24 Z25 <br>C16 C14 C15 C17 0.068 0.746 0.393 0.289 0.150 0.150<br>L3 L4 Description <br>Z22 Z20 Z18 Z16 Z17 Z19 Z21 Z23 0.210 0.439 0.289 0.112 0.422 0.400<br>DUT<br>Microstrip Z12, Z13 Z14, Z15 Z16, Z17 Z18, Z19 Z20, Z21 Z22, Z23<br>L1 C12 Z14 Z15 C13 L2<br>C7 Z12 Z10 Z8 Z6 Z7 Z9 Z11 Z13 C8<br>C5 C10 C11 C6<br>Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip<br>Z4 Z5 <br>C3 C9 C4<br>0.082 0.120 0.120 0.120 0.058 0.058<br>Figure 6. MRFE6VP5150NR1 Narrowband Test Circuit Schematic — 230 MHz Description<br>B1 C1 Z2 Z3 B2 C2 0.366 0.690 0.134 0.395 0.125 0.450<br>GG+ GG+<br>V COAX1 COAX2 V<br>Microstrip Z1 Z2, Z3 Z4, Z5 Z6, Z7 Z8*, Z9* Z10, Z11<br>Table 7. MRFE6VP5150NR1 Narrowband Test Circuit Microstrips — 230 MHz<br>Z1<br>RF<br>INPUT<br>**----- End of picture text -----**<br>
**MRFE6VP5150NR1 MRFE6VP5150GNR1**
RF Device Data Freescale Semiconductor, Inc.
7
**TYPICAL CHARACTERISTICS — 230 MHz**
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180<br>160 VDD = 50 Vdc, f = 230 MHz<br>Pulse Width = 100 sec, 20% Duty Cycle<br>140 GeZI<br>120 a<br>100 A<br>Pin = 0.34 W<br>80<br>feeyee<br>60<br>Pin = 0.17 W<br>40<br>ie ee Ae<br>20 ee<br>0 A ae<br>0 0.5 1 1.5 2 2.5 3 3.5<br>VGS, GATE--SOURCE VOLTAGE (VOLTS)<br>, OUTPUT POWER (WATTS) PEAK<br>out<br>P<br>**----- End of picture text -----**<br>
**Figure 7. Output Power versus Gate--Source Voltage at a Constant Input Power**
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**----- Start of picture text -----**<br>
54 31 90<br>VDD = 50 Vdc, IDQ(A+B) = 100 mA, f = 230 MHz<br>52 ee 30 Pulse Width = 100 sec, 20% Duty Cycle T_] 80<br>50 D<br>er 29 = 70<br>48 ee IDQ(A+B) = 900 mA SoH<br>46 ee 28 600 mA A 60<br>44 7 27 300 mA | | 50<br>42 HjttAtt{ -oe<br>26 40<br>40 aif |} p 100 T m A [LAI] 900 mA NI<br>25 600 mA 30<br>38 SEE =ee |<br>300 mA<br>36 VDD = 50 Vdc, IDQ(A+B) = 100 mA, f = 230 MHz 24 Gps 20<br>Pulse Width = 100 sec, 20% Duty Cycle 100 mA<br>34 APt 23 eeeeStF 10<br>eee ie<br>12 14 16 18 20 22 24 26 28 30 32 10 100 300<br>Pin, INPUT POWER (dBm) Pout, OUTPUT POWER (WATTS) PEAK<br>f P1dB P3dB Figure 9. Power Gain and Drain Efficiency<br>(MHz) (W) (W) versus Output Power and Quiescent Current<br>230 159 182<br>Figure 8. Output Power versus Input Power<br>29 90 29<br>VDD = 50 Vdc, IDQ(A+B) = 100 mA, f = 230 MHz --40 _ C IDQ(A+B) = 100 mA, f = 230 MHz<br>28 Pulse Width = 100 sec, 20% Duty Cycle 80 28 Pulse Width = 100 sec, 20% Duty Cycle<br>27<br>27 paeeN. 25 _ C 70 ———o_<br>im we 26<br>26 60<br>HH 25 FARA NO<br>25 TC = --40 _ C 85 _ C 50 24<br>24 i Aaa ie 40 23 fF NNIN N*N<br>ee NA 50 V<br>22<br>23 25 _ C 30 21 45 V<br>22 A re Gps 20 1 40 V<br>85 _ C D 20<br>VDD = 30 V 35 V<br>21 ptyseen ae 10 19 a<br>Ebert LTT pe<br>1 10 100 300 0 50 100 150 200<br>Pout, OUTPUT POWER (WATTS) PEAK Pout, OUTPUT POWER (WATTS) PEAK<br>, POWER GAIN (dB)<br>ps DRAIN EFFICIENCY (%)<br>G D,<br>, OUTPUT POWER (dBm) PEAK <br>out<br>P<br>, POWER GAIN (dB) , POWER GAIN (dB)<br>Gps DRAIN EFFICIENCY (%)D, Gps<br><br>**----- End of picture text -----**<br>
**Figure 10. Power Gain and Drain Efficiency versus Output Power**
**Figure 11. Power Gain versus Output Power and Drain--Source Voltage**
**MRFE6VP5150NR1 MRFE6VP5150GNR1**
RF Device Data Freescale Semiconductor, Inc.
8
## **230 MHz NARROWBAND PRODUCTION TEST FIXTURE**
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**----- Start of picture text -----**<br>
VDD = 50 Vdc, IDQ(A+B) = 100 mA, Pout = 150 W Peak<br>f Zsource Zload<br>MHz <br>230 6.2 + j17.7 12.1 + j12.5<br>| Zsource = Test circuit impedance as measured from __} _|<br>gate to gate, balanced configuration.<br>Zload = Test circuit impedance as measured from<br>drain to drain, balanced configuration.<br>Input Device Output<br>Matching + Under -- Matching<br>50 Network Test Network 50 <br>Li -- t t + l<br>h t<br>Zsource Zload<br>**----- End of picture text -----**<br>
**Figure 12. Narrowband Series Equivalent Source and Load Impedance — 230 MHz**
**MRFE6VP5150NR1 MRFE6VP5150GNR1**
RF Device Data Freescale Semiconductor, Inc.
9
## **87.5–108 MHz BROADBAND REFERENCE CIRCUIT**
**Table 8. 87.5–108 MHz Broadband Performance** (In Freescale Reference Circuit, 50 ohm system)
VDD = 50 Vdc, IDQ(A+B) = 100 mA, Pin = 1.5 W
|**Signal Type**<br>**f**<br>**(MHz)**<br>**Gps**<br>**(dB)**<br>**D**<br>**(%)**<br>**Pout**<br>**(W)**<br>CW<br>87.5<br>22.7<br>74.6<br>187<br>98<br>22.8<br>77.1<br>191<br>108<br>22.5<br>77.8<br>179<br>~~—————~~|
|---|
|**Table 9. Load Mismatch/Ruggedness** (In Freescale Reference Circuit, 50 ohm system) IDQ(A+B)= 100 mA|
|**Frequency**<br>**(MHz)**<br>**Signal Type**<br>**VSWR**<br>**Pin**<br>**(W)**<br>**Test Voltage, VDD**<br>**Result**<br>98<br>CW<br>> 65:1<br>at all Phase Angles<br>3.0<br>(3 dB Overdrive)<br>50<br>No Device<br>Degradation<br>~~—————~~|
**MRFE6VP5150NR1 MRFE6VP5150GNR1**
RF Device Data Freescale Semiconductor, Inc.
10
## **87.5–108 MHz BROADBAND REFERENCE CIRCUIT**
**==> picture [435 x 279] intentionally omitted <==**
**----- Start of picture text -----**<br>
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**Figure 13. MRFE6VP5150NR1 Broadband Reference Circuit Component Layout — 87.5–108 MHz**
**MRFE6VP5150NR1 MRFE6VP5150GNR1**
RF Device Data Freescale Semiconductor, Inc.
11
## **87.5–108 MHz BROADBAND REFERENCE CIRCUIT**
**Table 10. MRFE6VP5150NR1 Broadband Reference Circuit Component Designations and Values — 87.5–108 MHz**
|**Part**<br>~~eG~~|**Description**<br>~~eG~~|**Part Number**<br>~~eG~~|**Manufacturer**<br>~~eG~~|
|---|---|---|---|
|C1, C2<br>~~eG~~<br>~~eG~~|1F Chip Capacitors<br>~~eG~~<br>~~eG~~|GRM21BR71H105KA12L<br>~~eG~~<br>~~GO~~|Murata<br>~~eG~~<br>~~GO~~|
|C3<br>~~eG~~<br>~~GG~~|10 nF Chip Capacitor<br>~~eG~~<br>~~GG~~|ATC200B103KT50XT<br>~~GO~~<br>~~GG~~|ATC<br>~~GO~~<br>~~GG~~|
|C4, C8, C9<br>~~GG~~<br>~~GG~~|1000 pF Chip Capacitors<br>~~GG~~<br>~~GG~~|ATC200B102KT50XT<br>~~GG~~<br>~~GG~~|ATC<br>~~GG~~<br>~~GG~~|
|C5<br>~~GG~~|43 pF Chip Capacitor<br>~~GG~~|ATC100B430JT500XT<br>~~GG~~|ATC<br>~~GG~~|
|C6, C14<br>~~GG~~|10F Chip Capacitors<br>~~GG~~|C5750X7S2A106M230KB<br>~~GG~~<br>~~Ge~~|TDK<br>~~GG~~|
|C7<br>~~eG~~|470F, 63 V Electrolytic Capacitor<br>~~eG~~|MCGPR63V477M13X26RH<br>~~eG~~<br>~~Ge~~|Multicomp<br>~~eG~~|
|C10<br>~~pf~~|10 pF Chip Capacitor<br>~~pf~~|ATC100B100JT500XT<br>~~Ge~~<br>~~pf~~<br>~~GO~~|ATC<br>~~pf~~|
|C11<br>~~eG~~|10 nF Chip Capacitor<br>~~eG~~|GRM319R72A103KA01D<br>~~eG~~<br>~~GO~~|Murata<br>~~eG~~|
|C12<br>~~eG~~|47 nF Chip Capacitor<br>~~eG~~|GRM31MR72A473KA01L<br>~~GO~~<br>~~eG~~|Murata<br>~~eG~~|
|C13<br>~~eG~~<br>~~ee~~|470 nF Chip Capacitor<br>~~eG~~<br>~~GG~~|GRM31MR72A474KA35L<br>~~eG~~<br>~~GG~~|Murata<br>~~eG~~<br>~~GG~~|
|Coax1<br>~~ee~~|35Flex Cable, 11.02, 3 Turns<br>~~GG~~|HSF-141C-35<br>~~GG~~|Hongsen Cable<br>~~GG~~|
|L1<br>~~ee~~<br>~~eG~~<br>~~Ge~~|47 nH Inductor<br>~~GG~~<br>~~eG~~<br>~~Ge~~|1812SMS47NJLC<br>~~GG~~<br>~~eG~~<br>~~GO~~|Coilcraft<br>~~GG~~<br>~~eG~~<br>~~GO~~|
|L2, L3<br>~~Ge~~|Toroid Core, 10 Turns, 22 AWG Magnetic Wire<br>~~Ge~~|11-750-K / 8077<br>~~GO~~|Ferronics/Beldon<br>~~GO~~|
|Q1<br>~~Ge~~<br>~~GG~~|RF Power LDMOS Transistor<br>~~Ge~~<br>~~GG~~|MRFE6VP5150NR1<br>~~GO~~<br>~~GG~~<br>~~GO~~|Freescale<br>~~GO~~<br>~~GG~~|
|R1<br>~~GG~~<br>~~Ge~~|2.2 K, 1/8 W Chip Resistor<br>~~GG~~<br>~~Ge~~|CRCW08052K20FKEA<br>~~GG~~<br>~~Ge~~<br>~~GO~~|Vishay<br>~~GG~~<br>~~Ge~~|
|R2<br>~~Ge~~<br>~~GG~~|390, 1/8 W Chip Resistor<br>~~Ge~~<br>~~GG~~|CRCW0805390RFKEA<br>~~Ge~~<br>~~GO~~<br>~~GG~~|Vishay<br>~~Ge~~<br>~~GG~~|
|R3<br>~~Ge~~|10, 1/8 W Chip Resistor<br>~~Ge~~|RK73H2ATTD10R0F<br>~~Ge~~|KOA Speer<br>~~Ge~~|
|R4<br>~~GG~~|1.0 K, 1/8 W Chip Resistor<br>~~GG~~|RR1220P-102-D<br>~~GG~~|Susumu<br>~~GG~~|
|R5<br>~~GG~~|2.7 K, 1/8 W Chip Resistor<br>~~GG~~|CRCW08052K70FKEA<br>~~GG~~<br>~~Ge~~|Vishay<br>~~GG~~|
|R6<br>~~eG~~|200, 1/8 W Chip Resistor<br>~~eG~~|CRCW0805200RFKEA<br>~~eG~~<br>~~Ge~~<br>~~GO~~|Vishay<br>~~eG~~|
|R7<br>~~eG~~|5.0 KMulti-turn Cermet Trimmer Potentiometer<br>~~eG~~|3224W-1-502E<br>~~Ge~~<br>~~eG~~<br>~~GO~~|Bourns<br>~~eG~~|
|R8<br>~~eG~~|10, 1/4 W Chip Resistor<br>~~eG~~|CRCW120610R0FKEA<br>~~GO~~<br>~~eG~~|Vishay<br>~~eG~~|
|R9, R10<br>~~eG~~<br>~~a~~|5.1 K, 1/2 W Chip Resistors<br>~~eG~~<br>~~ee~~|CRCW12105K10FKEA<br>~~eG~~|Vishay<br>~~eG~~|
|T1<br>~~eG~~<br>~~a~~|61 Material Binocular Core Ferrite (1:1) with<br>24 AWG 1 Turn Primary, 24 AWG 1 Turn<br>Secondary, Hand Wound<br>~~eG~~<br>~~ee~~|2861000102<br>~~eG~~<br>~~GO~~|Fair-Rite<br>~~eG~~|
|U1<br>~~a~~<br>~~eG~~|Voltage Regulator 5 V, Micro8<br>~~ee~~<br>~~eG~~|LP2951ACDMR2G<br>~~eG~~<br>~~GO~~<br>~~GO~~|ON Semiconductor<br>~~eG~~|
|U2<br>~~eG~~|NPN Bipolar Transistor<br>~~eG~~|BC847ALT1G<br>~~GO~~<br>~~eG~~<br>~~GO~~|ON Semiconductor<br>~~eG~~|
|PCB<br>~~eG~~<br>~~GG~~|Rogers RO4350B, 0.030,r= 3.66<br>~~eG~~<br>~~GG~~|D58764<br>~~eG~~<br>~~GO~~<br>~~GG~~|MTL<br>~~eG~~<br>~~GG~~|
**MRFE6VP5150NR1 MRFE6VP5150GNR1**
RF Device Data Freescale Semiconductor, Inc.
12
**==> picture [348 x 570] intentionally omitted <==**
**----- Start of picture text -----**<br>
H<br>DD<br>V<br>RF<br>OUTPUT<br>+ C7<br>C6 Z17<br>C14<br>C13 COAX1<br>Microstrip Microstrip Microstrip Microstrip Microstrip<br> <br>C12 0.180 0.027 0.150 0.210 0.150<br>C10 Description<br> <br>C11<br>Z15 Z16<br>0.240 2.060 0.680 0.240 0.480<br>C8 C9<br>L3<br>Microstrip Z9, Z10 Z11*, Z12* Z13*, Z14* Z15, Z16 Z17 * Line length includes microstrip bends<br>L2<br>Z13 Z14<br>Z11 Z12<br>Z9 Z10 Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip<br> <br>0.080 0.080 0.080 0.170 0.200 0.630<br>DUT Description<br> <br>Bias Regulator and<br>Z7 Z8 0.230 0.280 0.680 0.310 0.270 0.380<br>Temperature Compensation<br>Z5 Z6<br>R8 Z3 Z4<br>Microstrip Z1 Z2* Z3* Z4 Z5, Z6 Z7, Z8<br>Table 11. MRFE6VP51510NR1 Broadband Reference Circuit Microstrips — 87.5–108 MHz<br>Figure 14. MRFE6VP5150NR1 Broadband Reference Circuit Schematic — 87.5–108 MHz<br>T1<br>Z2<br>L1<br>C4<br>C5<br>Z1<br>RF<br>INPUT<br>**----- End of picture text -----**<br>
**MRFE6VP5150NR1 MRFE6VP5150GNR1**
RF Device Data Freescale Semiconductor, Inc.
13
## **TYPICAL CHARACTERISTICS — 87.5–108 MHz BROADBAND REFERENCE CIRCUIT**
**==> picture [284 x 174] intentionally omitted <==**
**----- Start of picture text -----**<br>
25 90<br>24.5 VDD = 50 Vdc, Pin = 1.0 W, IDQ(A+B) = 100 mA 80<br>D<br>24 Seeeeneesnnn 70<br>23.5 CEE EP Cee eee 60<br>23 50<br>22.5 po 40 7<br>Gps<br>22 200<br>21.5 175<br>Pout<br>21 150<br>20.5 Oe 125<br>20 oeaPP ee 100 :<br>86 88 90 92 94 96 98 100 102 104 106 108 110<br>f, FREQUENCY (MHz)<br>, DRAIN<br>D<br><br>EFFICIENCY (%)<br>, POWER GAIN (dB)<br>ps<br>G<br>, OUTPUT<br>out<br>P<br>POWER (WATTS)<br>**----- End of picture text -----**<br>
**Figure 15. Power Gain, Drain Efficiency and CW Output Power versus Frequency at a Constant Input Power**
**==> picture [500 x 199] intentionally omitted <==**
**----- Start of picture text -----**<br>
200 200<br>VDD = 50 Vdc VDD = 50 Vdc<br>Pin = 0.25 W Pin = 10 5 . 0 W<br>150 150<br>f = 108 MHz<br>PaRREED tt | lye<br>100 100<br>f = 108 MHz<br>Pitt pw) Ltt a 98 MHz<br>98 MHz<br>50 50<br>87.5 MHz<br>tit yy | pr |<br>87.5 MHz<br>Aw<br>0 0<br>EL<br>0 0.5 1 1.5 2 2.5 3 3.5 0 0.5 1 1.5 2 2.5 3 3.5<br>VGS, GATE--SOURCE VOLTAGE (VOLTS) VGS, GATE--SOURCE VOLTAGE (VOLTS)<br>Figure 16. CW Output Power versus Gate--Source Figure 17. CW Output Power versus Gate--Source<br>Voltage at a Constant Input Power Voltage at a Constant Input Power<br>, OUTPUT POWER (WATTS) , OUTPUT POWER (WATTS)<br>out out<br>P P<br>**----- End of picture text -----**<br>
**MRFE6VP5150NR1 MRFE6VP5150GNR1**
RF Device Data Freescale Semiconductor, Inc.
14
## **TYPICAL CHARACTERISTICS — 87.5–108 MHz BROADBAND REFERENCE CIRCUIT**
**==> picture [235 x 249] intentionally omitted <==**
**----- Start of picture text -----**<br>
54 eeeeee<br>52 ee<br>a<br>50 aaA<br>f = 108 MHz<br>Aee 98 MHz<br>48 7a<br>87.5 MHz<br>V7 rnaere<br>46<br>ee ee VDD = 50 Vdc<br>lDQ(A+B) = 100 mA<br>44<br>20 22 24 26 28 30<br>Pin, INPUT POWER (dBm)<br>f P1dB P3dB<br>(MHz) (W) (W)<br>87.5 164 189<br>98 145 183<br>108 130 165<br>, OUTPUT POWER (dBm)<br>out<br>P<br>**----- End of picture text -----**<br>
**Figure 18. CW Output Power versus Input Power**
**==> picture [254 x 175] intentionally omitted <==**
**----- Start of picture text -----**<br>
30 90<br>28 D 80<br>f = 108 MHz<br>Pot tt |<br>26 oes 98 MHz 70<br>SEE Ss<br>24 87.5 MHz 60<br>108 MHz Gps<br>22 50<br>Paina<br>98 MHz<br>20 40<br>LAT<br>87.5 MHz VDD = 50 Vdc, lDQ(A+B) = 100 mA<br>18 30<br>30 mi [TT] tP 100 200<br>Pout, OUTPUT POWER (WATTS)<br>, POWER GAIN (dB)<br>ps DRAIN EFFICIENCY (%)<br>G D,<br><br>**----- End of picture text -----**<br>
**Figure 19. Power Gain and Drain Efficiency versus CW Output Power**
**MRFE6VP5150NR1 MRFE6VP5150GNR1**
RF Device Data Freescale Semiconductor, Inc.
15
**87.5–108 MHz BROADBAND REFERENCE CIRCUIT**
**==> picture [441 x 241] intentionally omitted <==**
**----- Start of picture text -----**<br>
Lf ED OK Z pret] o = 50 cS<br>VY ESS eoceeeene Zsource f = 108 MHz Onan eras 3<br>AA LEO KS Ss eb PSS<br>Wy BE RS f = 87.5 MHz oo oe i ory ALS Kr<br>ef PERE | SIR. OER<br>Eh | fs el LEER LIE LARSSSS SSL<br>S73 POET ESR LISS SRE HEE<br>BF BITE f = 87.5 MHz PEER ROR SNL Cae<br>ef BF ETI TT R eee, Zload QOL SLLLL H<br>$/>/ . LE Sid TTT ey PEK KDRKK ESO NN HE<br>éfs/ 1 AYsR TEETER CG PLOLLLE<br>f = 108 MHz<br>El | AYHepa O T LT TERRE SSS<br>fol fb ay rosterieiteri eeace eeatesss eee an TREE PRR<br>afLf srstiriitiiiciecteeeemenerectis?Saugsstectatsss/st:: Ruma stenmosees iPREpaaeans STEERSEE T A a PEFT 96OS<br>4<br>° ia levee epee mete eat Bm<br>BCH BEE a | tT Hs aun NOUCTANe cohaht (=) {yr a nee<br>ot’ |e Somen seeeeae RESISTANCE component(-R ) se en ane Ti 4 CT | AES,Beaaetetes ow“2<br>Senet eccterstcrit1t DSBS<br>SGNa\7\ Perea a entragagecuesss ensueCOA uatarnatXS werSOE<br>VDD = 50 Vdc, IDQ(A+B) = 100 mA, Pout = 150 W CW<br>**----- End of picture text -----**<br>
**==> picture [307 x 241] intentionally omitted <==**
**----- Start of picture text -----**<br>
f Zsource Zload<br>MHz <br>87.5 20.3 + j26.9 35.3 + j15.9<br>92 20.4 + j29.6 35.2 + j17.1<br>96 20.6 + j31.9 35.1 + j17.3<br>100 20.8 + j34.1 33.2 + j17.4<br>104 21.0 + j36.5 31.7 + j19.5<br>108 21.4 + j38.6 30.6 + j21.4<br>Zsource = Test circuit impedance as measured from<br>gate to gate, balanced configuration.<br>Zload = Test circuit impedance as measured<br>from drain to drain, balanced configuration.<br>Input Device Output<br>Matching + Under -- Matching<br>Network Test Network<br>50 50 <br>-- +<br>Zsource Zload<br>**----- End of picture text -----**<br>
**Figure 20. Broadband Series Equivalent Source and Load Impedance — 87.5–108 MHz**
**MRFE6VP5150NR1 MRFE6VP5150GNR1**
RF Device Data Freescale Semiconductor, Inc.
16
## **HARMONIC MEASUREMENTS — 87.5–108 MHz BROADBAND REFERENCE CIRCUIT**
**==> picture [451 x 220] intentionally omitted <==**
**----- Start of picture text -----**<br>
10<br>1 [T1] 100 MHz<br>1<br>0 it 1 [T1] 100 MHz --39.8 dB<br>--10 2 [T1] 200 MHz --20.1 dB<br>| | ty | | |<br>--20 2 3 [T1] 300 MHz --45.5 dB (200 MHz)H2 (300 MHz)H3 (400 MHz)H4 (500 MHz)H5<br>4 [T1] 400 MHz --35.6 dB<br>--39.8 dB --20.1 dB --45.5 dB --35.6 dB<br>piFu E E<br>--30<br>4<br>1<br>pitt |ty|<br>--40<br>3<br>--50<br>| ti Th] Pt ot TT<br>--60<br>--70<br>Pane Da Dae ee<br>--80<br>| | |p ty<br>--90<br>i tt | ttt<br>Start 0 Hz 60 Hz Stop 600 Hz<br>**----- End of picture text -----**<br>
**Figure 21. 100 MHz Harmonics @ 150 W**
**MRFE6VP5150NR1 MRFE6VP5150GNR1**
RF Device Data Freescale Semiconductor, Inc.
17
## **PACKAGE DIMENSIONS**
**MRFE6VP5150NR1 MRFE6VP5150GNR1**
RF Device Data Freescale Semiconductor, Inc.
18
**MRFE6VP5150NR1 MRFE6VP5150GNR1**
RF Device Data Freescale Semiconductor, Inc.
19
**MRFE6VP5150NR1 MRFE6VP5150GNR1**
RF Device Data Freescale Semiconductor, Inc.
20
**MRFE6VP5150NR1 MRFE6VP5150GNR1**
RF Device Data Freescale Semiconductor, Inc.
21
**MRFE6VP5150NR1 MRFE6VP5150GNR1**
RF Device Data Freescale Semiconductor, Inc.
22
**MRFE6VP5150NR1 MRFE6VP5150GNR1**
RF Device Data Freescale Semiconductor, Inc.
23
## **PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS**
Refer to the following resources to aid your design process.
## **Application Notes**
- AN1955: Thermal Measurement Methodology of RF Power Amplifiers
- AN1643: RF LDMOS Power Modules for GSM Base Station Application: Optimum Biasing Circuit
## **Engineering Bulletins**
- EB212: Using Data Sheet Impedances for RF LDMOS Devices
## **Software**
- Electromigration MTTF Calculator
- RF High Power Model
## **Development Tools**
- Printed Circuit Boards
For Software and Tools, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software & Tools tab on the part’s Product Summary page to download the respective tool.
## **REVISION HISTORY**
The following table summarizes revisions to this document.
|**Revision**|**Date**|**Description**|
|---|---|---|
|0|May 2014|<br>Initial Release of Data Sheet|
|1|July 2014|<br>Table 10, Broadband Reference Circuit Component Designations and Values — 87.5–108 MHz: updated<br>R2, R9 and R10 resistors, p. 12|
**MRFE6VP5150NR1 MRFE6VP5150GNR1**
RF Device Data Freescale Semiconductor, Inc.
24
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E 2014 Freescale Semiconductor, Inc.
**MRFE6VP5150NR1 MRFE6VP5150GNR1** & freescale
RF Device DataDocument Number: MRFE6VP5150N Freescale Semiconductor, Inc.Rev. 1, 7/2014
25
Updated at February 9, 2023
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