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MRF6V2150NR1
RF FET Transistor, 110 V, 450 MHz, 10 MHz, TO-270WB
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: NXP
- Product type: RF FETs
- Channel Type: N Channel
- Transistor Mounting: Flange
- Transistor Case Style: TO-270WB
| Delivery and price | |
|---|---|
| Units per pack | 50 |
| Price | 43.8 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
**Freescale Semiconductor** Technical Data
Document Number: MRF6V2150N Rev. 4, 4/2010
## **RF Power Field--Effect Transistors** N--Channel Enhancement--Mode Lateral MOSFETs
Designed primarily for CW large--signal output and driver applications with frequencies up to 450 MHz. Devices are unmatched and are suitable for use in industrial, medical and scientific applications.
- Typical CW Performance at 220 MHz: VDD = 50 Volts, IDQ = 450 mA, Pout = 150 Watts Power Gain — 25 dB Drain Efficiency — 68.3%
- Capable of Handling 10:1 VSWR, @ 50 Vdc, 220 MHz, 150 Watts CW Output Power
## **MRF6V2150NR1 MRF6V2150NBR1**
**10--450 MHz, 150 W, 50 V LATERAL N--CHANNEL SINGLE--ENDED BROADBAND RF POWER MOSFETs**
## **Features**
- Characterized with Series Equivalent Large--Signal Impedance Parameters
- Qualified Up to a Maximum of 50 VDD Operation
- Integrated ESD Protection
- 225°C Capable Plastic Package
- RoHS Compliant
- In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
**CASE 1486--03, STYLE 1 TO--270 WB--4 PLASTIC MRF6V2150NR1** ° A **CASE 1484--04, STYLE 1 TO--272 WB--4** ie **PLASTIC MRF6V2150NBR1 PARTS ARE SINGLE--ENDED**
## **Table 1. Maximum Ratings**
|**Table 1. Maximum Ratings**||||
|---|---|---|---|
|**Rating**<br>Drain--Source Voltage<br>Gate--Source Voltage<br>Storage Temperature Range<br>Case Operating Temperature<br>Operating Junction Temperature **(1,2)**|**Symbol**<br>VDSS<br>VGS<br>Tstg<br>TC<br>TJ|**Value**<br>-- 0.5, +110<br>-- 0.5, +12<br>-- 65 to +150<br>150<br>225|**Unit**<br>Vdc<br>Vdc<br>°C<br>°C<br>°C|
|**Table 2. Thermal Characteristics**||||
|**Characteristic**|**Symbol**|**Value (2,3)**|**Unit**|
|Thermal Resistance, Junction to Case<br>Case Temperature 80°C, 150 W CW|RθJC|0.24|°C/W|
## **Table 2. Thermal Characteristics**
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RFin/VGS RFout/VDS<br>i<br>RFin/VGS RFout/VDS<br>cy<br>(Top View)<br>Note: Exposed backside of the package is<br>the source terminal for the transistor.<br>Figure 1. Pin Connections<br>**----- End of picture text -----**<br>
## **Table 3. ESD Protection Characteristics**
|**Table 3. ESD Protection Characteristics**||
|---|---|
|**Test Methodology**|**Class**|
|Human Body Model (per JESD22--A114)|2 (Minimum)|
|Machine Model (per EIA/JESD22--A115)|A (Minimum)|
|Charge Device Model (per JESD22--C101)|IV (Minimum)|
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product.
3. Refer to AN1955, _Thermal Measurement Methodology of RF Power Amplifiers._ Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1955.
> © Freescale Semiconductor, Inc., 2007--2008, 2010. All rights reserved. **MRF6V2150NR1 MRF6V2150NBR1** ~~a~~[tr] ~~eescale”~~
**MRF6V2150NR1 MRF6V2150NBR1**
RF Device Data Freescale Semiconductor
1
## **Table 4. Moisture Sensitivity Level**
|**Table 4. Moisture Sensitivity Level**||
|---|---|
|**Test Methodology**<br>**Rating**|**Package Peak Temperature**<br>**Unit**|
|Per JESD22--A113, IPC/JEDEC J--STD--020<br>3|260<br>°C|
|**Table 5. Electrical Characteristics** (TA= 25°C unless otherwise noted)||
|**Characteristic**<br>**Symbol**|**Min**<br>**Typ**<br>**Max**<br>**Unit**|
|**Off Characteristics**||
|Zero Gate Voltage Drain Leakage Current<br>(VDS= 100 Vdc, VGS= 0 Vdc)<br>IDSS<br>—<br>—<br>2.5<br>mA<br>Zero Gate Voltage Drain Leakage Current<br>(VDS= 50 Vdc, VGS= 0 Vdc)<br>IDSS<br>—<br>—<br>50<br>μAdc<br>Drain--Source Breakdown Voltage<br>(ID= 75 mA, VGS= 0 Vdc)<br>V(BR)DSS<br>110<br>—<br>—<br>Vdc<br>Gate--Source Leakage Current<br>(VGS= 5 Vdc, VDS= 0 Vdc)<br>IGSS<br>—<br>—<br>10<br>μAdc<br>~~SSeeeeeee~~||
|**On Characteristics**||
|Gate Threshold Voltage<br>(VDS= 10 Vdc, ID= 400μAdc)<br>VGS(th)<br>1<br>1.62<br>3<br>Vdc<br>Gate Quiescent Voltage<br>(VDD= 50 Vdc, ID= 450 mAdc, Measured in Functional Test)<br>VGS(Q)<br>1.5<br>2.6<br>3.5<br>Vdc<br>Drain--Source On--Voltage<br>(VGS= 10 Vdc, ID= 1 Adc)<br>VDS(on)<br>—<br>0.26<br>—<br>Vdc<br>~~EE~~||
|**Dynamic Characteristics**||
|Reverse Transfer Capacitance<br>(VDS= 50 Vdc±30 mV(rms)ac @ 1 MHz, VGS= 0 Vdc)<br>Crss<br>—<br>1.6<br>—<br>pF<br>Output Capacitance<br>(VDS= 50 Vdc±30 mV(rms)ac @ 1 MHz, VGS= 0 Vdc)<br>Coss<br>—<br>93<br>—<br>pF<br>Input Capacitance<br>(VDS= 50 Vdc, VGS= 0 Vdc±30 mV(rms)ac @ 1 MHz)<br>Ciss<br>—<br>163<br>—<br>pF<br>~~ee~~||
|**Functional Tests**(In Freescale Test Fixture, 50 ohm system) VDD= 50 Vdc, IDQ= 450 mA, Pout= 150 W, f = 220 MHz, CW||
|Power Gain<br>Gps<br>23.5<br>25<br>26.5<br>dB<br>Drain Efficiency<br>ηD<br>66<br>68.3<br>—<br>%<br>Input Return Loss<br>IRL<br>—<br>--17<br>--9<br>dB<br>~~——_—————~~||
|**Typical Performances**(In Freescale 27 MHz and 450 MHz Test Fixtures, 50 ohm system) VDD= 50 Vdc, IDQ= 450 mA, Pout= 150 W CW||
|Power Gain<br>f = 27 MHz<br>f = 450 MHz<br>Gps<br>—<br>—<br>32.3<br>22.9<br>—<br>—<br>dB<br>Drain Efficiency<br>f = 27 MHz<br>f = 450 MHz<br>ηD<br>—<br>—<br>78.7<br>57.6<br>—<br>—<br>%<br>Input Return Loss<br>f = 27 MHz<br>f = 450 MHz<br>IRL<br>—<br>—<br>--10.6<br>--17.6<br>—<br>—<br>dB<br>~~FEE~~||
ATTENTION: The MRF6V2150N and MRF6V2150NB are high power devices and special considerations must be followed in board design and mounting. Incorrect mounting can lead to internal temperatures which exceed the maximum allowable operating junction temperature. Refer to Freescale Application Note AN3263 (for bolt down mounting) or AN1907 (for solder reflow mounting) **PRIOR TO STARTING SYSTEM DESIGN** to ensure proper mounting of these devices. ~~A~~
**MRF6V2150NR1 MRF6V2150NBR1**
RF Device Data Freescale Semiconductor
2
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B3<br>VSUPPLY<br>+<br>B1<br>C17 C18 C19 C20<br>VBIAS L2<br>+ + + II!I If!<br>R1 B2<br>C1 C2 C3 C4 C5 C6 C7<br>III IItl<br>C14 C15 C16<br>L1<br>iil RF<br>C8 C9 C10 C11 R2 L3 OUTPUT<br>iil! Z7 Z8 Z9 Z10 Z11<br>RF<br>INPUT Z1 Z2 Z3 Z4 Z5 Z6 C23<br>C21 C22<br>C12<br>DUT<br>= I C13 =<br>Z1 0.352″ x 0.082″ Microstrip Z8 0.443″ x 0.170″ Microstrip<br>Z2 0.944″ x 0.082″ Microstrip Z9 2.360″ x 0.170″ Microstrip<br>Z3 1.480″ x 0.082″ Microstrip Z10 0.502″ x 0.170″ Microstrip<br>Z4 0.276″ x 0.220″ Microstrip Z11 0.443″ x 0.082″ Microstrip<br>Z5 0.434″ x 0.220″ Microstrip PCB Arlon CuClad 250GX--0300--55--22, 0.030″, εr = 2.55<br>Z6, Z7 0.298″ x 0.630″ Microstrip<br>**----- End of picture text -----**<br>
**Figure 2. MRF6V2150NR1(NBR1) Test Circuit Schematic — 220 MHz**
**Table 6. MRF6V2150NR1(NBR1) Test Circuit Component Designations and Values — 220 MHz**
|~~ns~~|~~I (~~|~~(~~||
|---|---|---|---|
|**Part**<br>~~ns~~|**Description**<br>~~I (~~|**Part Number**<br>~~(~~|**Manufacturer**|
|B1, B2<br>~~ns~~<br>~~OO~~|95Ω, 100 MHz Long Ferrite Beads, Surface Mount<br>~~I (~~<br>~~OO~~|2743021447<br>~~(~~<br>~~OO~~|Fair--Rite<br>~~OO~~|
|B3<br>~~OO~~<br>~~a~~|47Ω, 100 MHz Short Ferrite Bead, Surface Mount<br>~~OO~~<br>~~OO~~|2743019447<br>~~OO~~<br>~~OO~~|Fair--Rite<br>~~OO~~<br>~~OO~~|
|C1<br>~~a ~~<br>~~a~~|47μF, 50 V Electrolytic Capacitor<br> ~~OO~~<br>~~OO~~|476KXM063M<br>~~OO~~<br>~~OO~~|Illinois Capacitor<br>~~OO~~<br>~~OO~~|
|C2<br>~~a ~~<br>~~a~~<br>~~ey~~|22μF, 35 V Tantalum Chip Capacitor<br> ~~OO~~<br>~~OO~~<br>~~GO~~|T494X226K035AT<br>~~OO~~<br>~~OO~~<br>~~GO~~|Kemet<br>~~OO~~<br>~~OO~~<br>~~GO~~|
|C3<br>~~a ~~<br>~~ey~~|10μF, 35 V Tantalum Chip Capacitor<br> ~~OO~~<br>~~GO~~|T491D106K035AT<br>~~OO~~<br>~~GO~~|Kemet<br>~~OO~~<br>~~GO~~|
|C4, C17<br>~~ey~~<br>~~GO~~|39 K pF Chip Capacitors<br>~~GO~~<br>~~GO~~|ATC200B393KT50XT<br>~~GO~~<br>~~GO~~|ATC<br>~~GO~~<br>~~GO~~|
|C5, C18<br>~~GO~~|22 K pF Chip Capacitors<br>~~GO~~|ATC200B203KT50XT<br>~~GO~~|ATC<br>~~GO~~|
|C6, C11, C19<br>~~OO~~|0.1μF, 50 V Chip Capacitors<br>~~OO~~|CDR33BX104AKYS<br>~~OO~~|Kemet<br>~~OO~~|
|C7, C8, C15, C16<br>~~GO~~|2.2μF, 50 V Chip Capacitors<br>~~GO~~|C1825C225J5RAC<br>~~GO~~|Kemet<br>~~GO~~|
|C9, C12, C14, C23<br>~~GO~~|1000 pF Chip Capacitors<br>~~GO~~|ATC100B102JT50XT<br>~~GO~~|ATC<br>~~GO~~|
|C10<br>~~GO~~|220 nF Chip Capacitor<br>~~GO~~|C1812C224K5RAC<br>~~GO~~|Kemet<br>~~GO~~|
|C13<br>~~GO~~|75 pF Chip Capacitor<br>~~GO~~|ATC100B750JT500XT<br>~~GO~~|ATC<br>~~GO~~|
|C20<br>~~DG~~|470μF, 63 V Electrolytic Capacitor<br>~~DG~~|ESME630ELL471MK25S<br>~~DG~~|United Chemi--Con<br>~~DG~~|
|C21<br>~~DO~~|30 pF Chip Capacitor<br>~~DO~~|ATC100B300JT500XT<br>~~DO~~|ATC<br>~~DO~~|
|C22<br>~~DO~~|33 pF Chip Capacitor<br>~~DO~~|ATC100B330JT500XT<br>~~DO~~|ATC<br>~~DO~~|
|L1<br>~~OO~~|4 Turn #18 AWG, 0.18″ID<br>~~OO~~|None<br>~~OO~~<br>~~OO~~|None<br>~~OO~~|
|L2<br>~~sD~~|82 nH Inductor<br>~~sD~~|1812SMS--82NJL<br>~~sD~~<br>~~OO~~<br>~~OO~~|Coilcraft<br>~~sD~~|
|L3<br>~~sD~~<br>~~a~~|17.5 nH Inductor<br>~~sD~~|B06TJL<br>~~OO~~<br>~~sD~~<br>~~OO~~<br>~~OO~~|Coilcraft<br>~~sD~~|
|R1<br>~~sD~~<br>~~a~~|270Ω, 1/4 W Chip Resistor<br>~~sD~~|CRCW12062700FKEA<br>~~OO~~<br>~~sD~~<br>~~OO~~|Vishay<br>~~sD~~|
|R2<br>~~a~~|27Ω, 1/4 W Chip Resistor|CRCW12064R75FKEA<br>~~OO~~|Vishay|
**MRF6V2150NR1 MRF6V2150NBR1**
RF Device Data Freescale Semiconductor
3
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**Figure 3. MRF6V2150NR1(NBR1) Test Circuit Component Layout — 220 MHz**
**MRF6V2150NR1 MRF6V2150NBR1**
RF Device Data Freescale Semiconductor
4
## **TYPICAL CHARACTERISTICS**
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1000 100<br>Ciss<br>100 Coss<br>S SS 10 AN<br>Nee Measured with ±30 mV(rms)ac @ 1 MHz ee e<br>VGS = 0 Vdc<br>10<br>Crss<br>oe P T<br>TC = 25°C<br>1 1<br>e d PE<br>0 10 20 30 40 50 1 10 100 200<br>VDS, DRAIN--SOURCE VOLTAGE (VOLTS) VDS, DRAIN--SOURCE VOLTAGE (VOLTS)<br>Figure 4. Capacitance versus Drain--Source Voltage Figure 5. DC Safe Operating Area<br>5 27<br>4 a 26 IDQ = 675 mA<br>VGS = 3 V 25 563 mA<br>3 450 mA<br>2.75 V<br>24<br>2 337 mA<br>2.63 V<br>——a : 23 antl):<br>2.5 V<br>1 BaD Os aiillin<br>22 225 mA VDD = 50 Vdc<br>f = 220 MHz<br>2.25 V<br>0 e ee 21 eae<br>—————— a i C LLPv yaa<br>0 20 40 60 80 100 120 1 10 100 200<br>DRAIN VOLTAGE (VOLTS) Pout, OUTPUT POWER (WATTS) CW<br>Figure 6. DC Drain Current versus Drain Voltage Figure 7. CW Power Gain versus Output Power<br>--10 58<br>VDD = 50 Vdc, f1 = 220 MHz, f2 = 220.1 MHz<br>--15 Two--Tone Measurements, 100 kHz Tone Spacing<br>--20 56 P3dB = 52.61 dBm (182.39 W) Ideal<br>IDQ = 225 mA<br>--25<br>--30 n Sie 336 mA ee e ee 54 =n P1dB = 52.27 dBm (168.66 W) a“ i<br>--35 450 mA<br>--40 52 Actual<br>563 mA<br>--45<br>685 mA<br>--50 50<br>--55 900 mA VDD = 50 Vdc, IDQ = 450 mA<br>f = 220 MHz<br>--60 ET ee ee) 48 4a<br>Li | ET 4<br>5 10 100 300 22 24 26 28 30 32<br>Pout, OUTPUT POWER (WATTS) PEP Pin, INPUT POWER (dBm)<br>C, CAPACITANCE (pF)<br>, DRAIN CURRENT (AMPS)<br>ID<br>, POWER GAIN (dB)<br>ps<br>G<br>, DRAIN CURRENT (AMPS)<br>ID<br>DISTORTION (dBc) , OUTPUT POWER (dBm)<br>out<br>P<br>IMD, THIRD ORDER INTERMODULATION<br>**----- End of picture text -----**<br>
**Figure 8. Third Order Intermodulation Distortion versus Output Power**
**Figure 9. CW Output Power versus Input Power**
**MRF6V2150NR1 MRF6V2150NBR1**
RF Device Data Freescale Semiconductor
5
## **TYPICAL CHARACTERISTICS**
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26 55<br>24 SE TC = --30 _ C 85 _ C }<br>50<br>22 25 _ C<br>Mapa |<br>50 V<br>45 V<br>20 40 V 45<br>35 V<br>18 W a — f o<br>30 V<br>40<br>16 ae 25 V IDQ = 450 mA VDD = 50 Vdc<br>f = 220 MHz IDQ = 450 mA<br>VDD = 20 V f = 220 MHz<br>14 +t | 35 OUP<br>0 50 100 150 200 10 15 20 25 30 35<br>Pout, OUTPUT POWER (WATTS) CW Pin, INPUT POWER (dBm)<br>Figure 10. Power Gain versus Output Power Figure 11. Power Output versus Power Input<br>28 80 10 [8]<br>25 _ C<br>27 85 _ C 70<br>26 HT Gps TTI --30 >) _ C 60 BSSSSSSFSS Saas<br>TC = --30 _ C 10 [7]<br>25 50<br>25 _ C<br>24 40<br>85 _ C<br>10 [6]<br>23 30<br>ηD VDD = 50 Vdc<br>22 IDQ = 450 mA 20<br>f = 220 MHz<br>21 e iat |er| i 10 10 [5] FOE ELE ELL<br>5 10 100 200 90 110 130 150 170 190 210 230 250<br>Pout, OUTPUT POWER (WATTS) CW TJ, JUNCTION TEMPERATURE (°C)<br>Figure 12. Power Gain and Drain Efficiency This above graph displays calculated MTTF in hours when the device<br>versus CW Output Power is operated at VDD = 50 Vdc, Pout = 150 W CW, and ηD = 68.3%.<br>MTTF calculator available at http://www.freescale.com/rf. Select<br>Software & Tools/Development Tools/Calculators to access MTTF<br>calculators by product.<br>, POWER GAIN (dB)<br>Gps , OUTPUT POWER (dBm)out<br>P<br>, POWER GAIN (dB) MTTF (HOURS)<br>ps DRAIN EFFICIENCY (%)<br>G D,<br>η<br>**----- End of picture text -----**<br>
**Figure 13. MTTF versus Junction Temperature**
**MRF6V2150NR1 MRF6V2150NBR1**
RF Device Data Freescale Semiconductor
6
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ay ae Zsource es a LTA<br> > =co \ >seeeae Lt ra<br>E ROS f = 220 MHz CoE<br>LEMESS SS Sr<br>ESSEX Zo = 10 Ω XS Zload secemueters:<br>f = 220 MHz<br>eho PERO ES o> SSSA. SL<br>oy KE LPR ne, SSS SSS<br>:/, [0] COSL IREBES seER Q SSSE OOS S S RES<br>PRL EES LER CERRO.<br>lo} b e b e eat Tye seea e rea eee eeraa LRT TILER Le LEERMaRSore<br>Bere TEL LPAe<br>rt mebesssesassiesie a SH<br>sei<br>lef befeiioeerstseee ine Met fabs ee<br>NCE COMPONE c(E-<br>euscetecc<br> 2 eee<br>fg ie sae Ramesses<br>siscstiSoeef e sssteits ae guane e e n eee ae meenaes| taeiaws ae angsietesoeoe Ais» OncAa<5xKSSs<br>VDD = 50 Vdc, IDQ = 450 mA, Pout = 150 W CW<br>f Zsource Zload<br>MHz Ω Ω<br>220 2.45 + j6.95 3.90 + j5.50<br>Zsource = Test circuit impedance as measured from<br>gate to ground.<br>Zload = Test circuit impedance as measured from<br>drain to ground.<br>Input Device Output<br>Matching Under Matching<br>Network Test Network<br>Zsource Zload<br>**----- End of picture text -----**<br>
**Figure 14. Series Equivalent Source and Load Impedance — 220 MHz**
**MRF6V2150NR1 MRF6V2150NBR1**
RF Device Data Freescale Semiconductor
7
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**----- Start of picture text -----**<br>
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|27 MHz|
|semiconductor|
|272--WB|
|Rev. 1|
|2freescale”|C)|C) ||
|Figure 15. MRF6V2150NR1(NBR1) Test Circuit Component Layout — 27 MHz|
|Table 7. MRF6V2150NR1(NBR1) Test Circuit Component Designations and Values — 27 MHz(NBR1) Test Circuit Component Designations and Values — 27 MHzNBR1) Test Circuit Component Designations and Values — 27 MHz) Test Circuit Component Designations and Values — 27 MHz Test Circuit Component Designations and Values — 27 MHzponent Designations and Values — 27 MHzonent Designations and Values — 27 MHzgnations and Values — 27 MHznations and Values — 27 MHz|
|Part|Description|Part Number|Manufacturer|
|B1, B3|95 Ω, 100 MHz Long Ferrite Beads|2743021447|Fair--Rite|
|B2|47 Ω, 100 MHz Short Ferrite Bead|2743019447|Fair--Rite|
|C1, C4, C5, C16|100 pF Chip Capacitors|ATC100B101JT500XT|ATC|
|C2|620 pF Chip Capacitor|ATC100B621JT200XT|ATC|
|C3|1000 pF Chip Capacitor|ATC100B102JT50XT|ATC|
|C6|2.2 μF, 50 V Chip Capacitor|C1825C225J5RAC--TU|Kemet|
|C7|0.1 μF Chip Capacitor|CDR33BX104AKYS|Kemet|
|C8|0.22 μF, 50 V Chip Capacitor|C1812C224K5RAC--TU|Kemet|
|C9, C12|22K pF Chip Capacitors|ATC200B223KT50XT|ATC|
|C10, C18|0.01 μF, 100 V Chip Capacitors|C1825C103K1GAC--TU|Kemet|
|C11, C19|0.1 pF Chip Capacitors|ATC100B0R1BT500XT|ATC|
|C13, C17|39K pF Chip Capacitors|ATC200B393KT50XT|ATC|
|C14|22 μF, 35 V Tantalum Capacitor|T491X226K035AT|Kemet|
|C15|10 μF, 35 V Tantalum Capacitor|T491D106K035AT|Kemet|
|C20|470 μF, 63 V Electrolytic Capacitor|MCGPR63V477M13X26--RH|Multicomp|
|L1|47 nH Inductor|1812SMS--47NJ|Coilcraft|
|L2*|9 Turn, #16 AWG, Inductor, Hand Wound, 0.250″ ID|Copper Wire|
|L3*|10 Turn, #16 AWG, Inductor, Hand Wound, 0.375″ ID|Copper Wire|
|L4*|9 Turn, #16 AWG, Inductor, Hand Wound, 0.375″ ID|Copper Wire|
|R1, R2|3.3 Ω, 1/2 W Chip Resistors|RK73B2ETTD3R3J|KOA|
|R3*, **|1 KΩ, 1/4 W Resistor|MCCFR0W4J0102A50|Multicomp|
|R4*, **|510 Ω, 1/2 W Resistor|MCRC1/2G511JT--RH|Multicomp|
|T1|RF600 Transformer 16:1 Impedance Ratio|RF600LF--16|Comm Concepts|
|T2|RF1000 Transformer 9:1 Impedance Ratio|RF1000LF--9|Comm Concepts|
**----- End of picture text -----**<br>
**Table 7. MRF6V2150NR1(NBR1) Test Circuit Component Designations and Values — 27 MHz(NBR1) Test Circuit Component Designations and Values — 27 MHzNBR1) Test Circuit Component Designations and Values — 27 MHz) Test Circuit Component Designations and Values — 27 MHz Test Circuit Component Designations and Values — 27 MHzponent Designations and Values — 27 MHzonent Designations and Values — 27 MHzgnations and Values — 27 MHznations and Values — 27 MHz**
* Leaded components mounted over traces. ** Resistor is mounted at center of inductor coil.
**MRF6V2150NR1 MRF6V2150NBR1**
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**==> picture [466 x 225] intentionally omitted <==**
**----- Start of picture text -----**<br>
C10 C9<br>C8 C6<br>Osooof [ potRooccqaagacs” ©, socoococc0ceovcccoo0000<br>0 LT a C7 oe C21 a B3 Oo5<br>B1 C20C19 , L4 C22<br>B2<br>O0004 C00000000 |_| G) GP )<br>° —}| 3 0000000000000\K ome)<br>C18<br>® C11 o|| [LIke<br>L1 C2 © C5 alee} — fess [|eLEBa) SE C13 C16 @ C17<br>00000000000000000 000000 ofL lL. K+ |60000000<br>f = — 000000000000f000<br>C3 L2 L3<br>S042 |[| a Lt aaL-—_i eeaH|<br>C1 DO6000000 000000000 C15<br>C4 a) a) C12<br>JO 00000000000 00000 reooooyy (LJ °]_ Poreseeoovece<br>G) 4) a)20000000 0000000 O (+) C14 +)<br>Se ) @)<br>=” f rreescaieé 450 MHz<br>semiconductor 272--WB<br>Rev. 1<br>CUT OUT AREA<br>+<br>**----- End of picture text -----**<br>
**Figure 16. MRF6V2150NR1(NBR1) Test Circuit Component Layout — 450 MHz**
**Table 8. MRF6V2150NR1(NBR1) Test Circuit Component Designations and Values — 450 MHz**
|**Part**|**Description**|**Part Number**|**Manufacturer**|
|---|---|---|---|
|B1, B2, B3|47Ω, 100 MHz Short Ferrite Beads|2743019447|Fair--Rite|
|C1|6.8 pF Chip Capacitor|ATC100B6R8CT500XT|ATC|
|C2|15 pF Chip Capacitor|ATC100B150JT500XT|ATC|
|C3, C5, C17, C18|240 pF Chip Capacitors|ATC100B241JT200XT|ATC|
|C4|36 pF Chip Capacitor|ATC100B360JT500XT|ATC|
|C6, C21|0.1μF, 50 V Chip Capacitors|CDR33BX104AKYS|Kemet|
|C7, C20|10K pF Chip Capacitors|ATC200B103KT50XT|ATC|
|C8, C19|22K pF Chip Capacitors|ATC200B223KT50XT|ATC|
|C9|10μF, 35 V Tantalum Capacitor|T491D106K035AS|Kemet|
|C10|22μF, 35 V Tantalum Capacitor|T491X226K035AS|Kemet|
|C11|47μF, 50 V Electrolytic Capacitor|476KXM050M|Illinois Capacitor|
|C12|18 pF Chip Capacitor|ATC100B180JT500XT|ATC|
|C13|10 pF Chip Capacitor|ATC100B100JT500XT|ATC|
|C14|0.6 -- 4.5 pF Variable Capacitor|27271SL|Johanson|
|C15|3 pF Chip Capacitor|ATC100B3R0CT500XT|ATC|
|C16|0.5 pF Chip Capacitor|ATC100B0R5BT500XT|ATC|
|C22|470μF, 63 V Electrolytic Capacitor|MCGPR63V477M13X26--RH|Multicomp|
|L1, L2|5 nH Mini Spring Air Core Inductors|A02TKLC|Coilcraft|
|L3|17.5 nH Mini Spring Air Core Inductor|B06TJLC|Coilcraft|
|L4|82 nH Midi Spring Air Core Inductor|1812SMS--82NJLC|Coilcraft|
|PCB|Arlon CuClad 250GX--0300--55--22, 0.030″,εr= 2.55|DS2054|DS|
**MRF6V2150NR1 MRF6V2150NBR1**
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**==> picture [497 x 482] intentionally omitted <==**
**----- Start of picture text -----**<br>
ONAN<br>f = 27 MHz<br>\ SSA ere Zsource OS Sy25<br>YES<br>PT EL<br>$ SSSA EE OO<br>Ih MBla%laRERERERSXx POEOxoxwenOR MeareSOS LESeneetit Zo = 50 Ω FE meneTARR A \<br>. “LIS LOREX Y SSE ETH LETT ARN \<br>TAsy TERESTEERECF KORRESPRROREE gO QRS EE S IY aenesselBAT HERRTRESS"; x<br>SSS SSL LLL ES<br>of f = 450 MHz EER LXRRS SEK«xsSSoeeee ee RY |<br>Bl PASE EERE LEBER IS ORE Ta SSE Cee Ah;<br>ofTad Zsource f e y) RL e SEODiane cament SAB<br>; ef [ 2 eee<br>et ee f = 27 MHz meee areca tenet<br>arene sesewsreers Zload weeeneene<br>Ste[*| ff)CPA i Sri naceeneee LPP Beet<br>ie Feces f = 450 MHz NCE COMPONENT(E-),iii0 oN Meeeaases wea rH Beer see) Muara st |<br>Zload = aeeeretiig gernee ©<br>e° seacfestisstic iim ode ae) ge Sa:<br>i 18) FE a Gi eeetester tity eeeWB umneanes|Fee EAS a5<br>VDD = 50 Vdc, IDQ = 450 mA, Pout = 150 W CW<br>f Zsource Zload<br>MHz Ω Ω<br>27 6.57 + j41.4 7.16 + j3.02<br>450 0.80 + j3.20 2.20 + j2.30<br>Zsource = Test circuit impedance as measured from<br>gate to ground.<br>Zload = Test circuit impedance as measured from<br>drain to ground.<br>Input Device Output<br>Matching Under Matching<br>Network Test Network<br>Zsource Zload<br>**----- End of picture text -----**<br>
**Figure 17. Series Equivalent Source and Load Impedance — 27, 450 MHz**
**MRF6V2150NR1 MRF6V2150NBR1**
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## **PACKAGE DIMENSIONS**
**MRF6V2150NR1 MRF6V2150NBR1**
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**MRF6V2150NR1 MRF6V2150NBR1**
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**MRF6V2150NR1 MRF6V2150NBR1**
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**MRF6V2150NR1 MRF6V2150NBR1**
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**MRF6V2150NR1 MRF6V2150NBR1**
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**MRF6V2150NR1 MRF6V2150NBR1**
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## **PRODUCT DOCUMENTATION AND SOFTWARE**
Refer to the following documents to aid your design process.
## **Application Notes**
- AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages
- AN1955: Thermal Measurement Methodology of RF Power Amplifiers
- AN3263: Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over--Molded Plastic Packages
## **Engineering Bulletins**
- EB212: Using Data Sheet Impedances for RF LDMOS Devices
## **Software**
- Electromigration MTTF Calculator
- RF High Power Model
For Software, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software & Tools tab on the part’s Product Summary page to download the respective tool.
## **REVISION HISTORY**
The following table summarizes revisions to this document.
|**Revision**|**Date**|**Description**|
|---|---|---|
|0|Feb. 2007|•<br>Initial Release of Data Sheet|
|1|May 2007|•<br>Corrected Test Circuit Component part numbers in Table 6, Component Designations and Values for C4,<br>C17, C5, C18, C9, C12, C14, C23, C13, C21, and C22, p. 3|
|2|Apr. 2008|•<br>Added Case Operating Temperature limit to the Maximum Ratings table and set limit to 150°C, p. 1<br>•<br>Corrected Cisstest condition to indicate AC stimulus on the VGSconnection versus the VDSconnection,<br>Dynamic Characteristics table, p. 2<br>•<br>Updated PCB information to show more specific material details, Fig. 2, Test Circuit Schematic, p. 3<br>•<br>Updated Part Numbers in Table 6, Component Designations and Values, to latest RoHS compliant part<br>numbers, p. 3<br>•<br>Replaced Case Outline 1486--03, Issue C, with 1486--03, Issue D, p. 8--10. Added pin numbers 1 through 4<br>on Sheet 1.<br>•<br>Replaced Case Outline 1484--04, Issue D, with 1484--04, Issue E, p. 11--13. Added pin numbers 1 through<br>4 on Sheet 1, replacing Gate and Drain notations with Pin 1 and Pin 2 designations.|
|3|Dec. 2008|•<br>Added Typical Performances table for 27 MHz, 450 MHz applications, p. 2<br>•<br>Added Figs. 15 and 16, Test Circuit Component Layout -- 27 MHz and 450 MHz, and Tables 7 and 8, Test<br>Circuit Component Designations and Values -- 27 MHz and 450 MHz, p. 8, 9<br>•<br>Added Fig. 17, Series Equivalent Source and Load Impedance for 27 MHz, 450 MHz, p. 10|
|4|Apr. 2010|•<br>Operating Junction Temperature increased from 200°C to 225°C in Maximum Ratings table, related<br>“Continuous use at maximum temperature will affect MTTF” footnote added and changed 200°C to 225°C<br>in Capable Plastic Package bullet, p. 1<br>•<br>Added Electromigration MTTF Calculator and RF High Power Model availability to Product Software,<br>p. 17|
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## _**How to Reach Us:**_
**Home Page:** www.freescale.com
## **Web Support:**
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**USA/Europe or Locations Not Listed:** Freescale Semiconductor, Inc. Technical Information Center, EL516 2100 East Elliot Road Tempe, Arizona 85284 1--800--521--6274 or +1--480--768--2130 www.freescale.com/support
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Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document.
Freescale Semiconductor reserves the right to make changes without further notice to any products herein. Freescale Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Freescale Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters that may be provided in Freescale Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals”, must be validated for each customer application by customer’s technical experts. Freescale Semiconductor does not convey any license under its patent rights nor the rights of others. Freescale Semiconductor products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Freescale Semiconductor product could create a situation where personal injury or death may occur. Should Buyer purchase or use Freescale Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold Freescale Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Freescale Semiconductor was negligent regarding the design or manufacture of the part.
Freescale t and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2007--2008, 2010. All rights reserved.
## **MRF6V2150NR1 MRF6V2150NBR1**
RF Device Data Freescale Semiconductor
Document Number: MRF6V2150N 18Rev. 4, 4/2010
Updated at February 9, 2023
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