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MRF300BN
RF FET Transistor, 133 V, 272 W, 1.8 MHz, 250 MHz, TO-247
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- Manufacturer: NXP
- Product type: RF FETs
- Drain Source Voltage Vds:133V; Continuous Drain Current Id:-; Power Dissipation Pd:272W; Operating Frequency Min:1.8MHz; Operating Frequency Max:250MHz; RF Transistor Case:TO-247; No. of Pin
- MSL: -
- SVHC: No SVHC (27-Jun-2024)
- No. of Pins: 3Pins
- Channel Type: N Channel
- Product Range: MRF300AN; MRF300BN
- Power Dissipation: 272W
- Transistor Mounting: Through Hole
- Transistor Case Style: TO-247
- Operating Frequency Max: 250MHz
- Operating Frequency Min: 1.8MHz
- Drain Source Voltage Vds: 133V
- Operating Temperature Max: 175°C
- Continuous Drain Current Id: -
| Delivery and price | |
|---|---|
| Units per pack | 5 |
| Price | 195.36 € |
| Current stock | 100+ |
| Lead time | 30 days |
Datasheet
**NXP Semiconductors** Technical Data Document Number: MRF300AN Rev. 0, 05/2018 ## **RF Power LDMOS Transistors** ## High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs These high ruggedness devices are designed for use in high VSWR industrial, scientific and medical applications and HF and VHF communications as well as radio and VHF TV broadcast, sub--GHz aerospace and mobile radio applications. Their unmatched input and output design allows for wide frequency range use from 1.8 to 250 MHz. ## **MRF300AN MRF300BN** **1.8–250 MHz, 300 W CW, 50 V WIDEBAND RF POWER LDMOS TRANSISTORS** **Typical Performance:** VDD = 50 Vdc |**Frequency**<br>**(MHz)**<br>**Signal Type**<br>27<br>CW<br>40.68 **(1)**<br>CW<br>81.36<br>CW<br>230 **(2)**<br>Pulse<br>(100sec, 20% Duty Cycle)<br>~~= ===~~|**Frequency**<br>**(MHz)**<br>**Signal Type**<br>27<br>CW<br>40.68 **(1)**<br>CW<br>81.36<br>CW<br>230 **(2)**<br>Pulse<br>(100sec, 20% Duty Cycle)<br>~~= ===~~|**Frequency**<br>**(MHz)**<br>**Signal Type**<br>27<br>CW<br>40.68 **(1)**<br>CW<br>81.36<br>CW<br>230 **(2)**<br>Pulse<br>(100sec, 20% Duty Cycle)<br>~~= ===~~|**Pout**<br>**(W)**<br>**Gps**<br>**(dB)**<br>**D**<br>**(%)**<br>340 CW<br>27.3<br>80.6<br>330 CW<br>28.2<br>79.0<br>310 CW<br>26.0<br>76.5<br>330 Peak<br>20.4<br>75.5<br>~~===~~|**Pout**<br>**(W)**<br>**Gps**<br>**(dB)**<br>**D**<br>**(%)**<br>340 CW<br>27.3<br>80.6<br>330 CW<br>28.2<br>79.0<br>310 CW<br>26.0<br>76.5<br>330 Peak<br>20.4<br>75.5<br>~~===~~|**Pout**<br>**(W)**<br>**Gps**<br>**(dB)**<br>**D**<br>**(%)**<br>340 CW<br>27.3<br>80.6<br>330 CW<br>28.2<br>79.0<br>310 CW<br>26.0<br>76.5<br>330 Peak<br>20.4<br>75.5<br>~~===~~| |---|---|---|---|---|---| |**Load Mismatch/Ruggedness**|||||| |**Frequency**|||**Pin**|**Test**|| |**(MHz)**|**Signal Type**|**VSWR**|**(W)**|**Voltage**|**Result**| |40.68|Pulse<br>> 65:1 at all|> 65:1 at all|2 Peak|50|No Device| ||(100sec, 20%|Phase|(3 dB||Degradation| ||Duty Cycle)|Angles|Overdrive)||| |230|Pulse<br>> 65:1 at all|> 65:1 at all|6 Peak|50|No Device| ||(100sec, 20%|Phase|(3 dB||Degradation| ||DutyCycle)|Angles|Overdrive)||| 1. Measured in 40.68 MHz narrowband reference circuit (page 5). 2. Measured in 230 MHz typical narrowband fixture (page 10). **==> picture [46 x 62] intentionally omitted <==** **----- Start of picture text -----**<br> D<br>G<br>**----- End of picture text -----**<br> ## **Features** - Unmatched input and output allowing wide frequency range utilization - Two opposite pin--connection versions (A and B) to be used in a push--pull, two--up configuration for wideband performance - Characterized from 30 to 50 V **==> picture [70 x 44] intentionally omitted <==** **----- Start of picture text -----**<br> G<br>S<br>D<br>TO--247--3L<br>MRF300AN<br>**----- End of picture text -----**<br> **==> picture [69 x 45] intentionally omitted <==** **----- Start of picture text -----**<br> D<br>S<br>G<br>TO--247--3L<br>MRF300BN<br>**----- End of picture text -----**<br> Note: Exposed backside of the package also serves as a source terminal for the transistor. - Suitable for linear application - Integrated ESD protection with greater negative gate--source voltage range for improved Class C operation **==> picture [6 x 7] intentionally omitted <==** **----- Start of picture text -----**<br> S<br>**----- End of picture text -----**<br> ## **Typical Applications** - Industrial, scientific, medical (ISM) - Laser generation - Plasma etching - Particle accelerators - MRI and other medical applications - Industrial heating, welding and drying systems - Broadcast - Radio broadcast - VHF TV broadcast - Mobile radio - VHF base stations - HF and VHF communications - Switch mode power supplies **MRF300AN MRF300BN** 2018 NXP B.V. RF Device Data NXP Semiconductors 1 ## **Table 1. Maximum Ratings** |**Table 1. Maximum Ratings**|**Table 1. Maximum Ratings**|**Table 1. Maximum Ratings**|||||| |---|---|---|---|---|---|---|---| |**Rating**|||**Symbol**||**Value**||**Unit**| |Drain--Source Voltage|||VDSS||–0.5, +133||Vdc| |Gate--Source Voltage|||VGS||–6.0, +10||Vdc| |Operating Voltage|||VDD||50||Vdc| |Storage Temperature Range|||Tstg||–65 to +150||C| |Case Operating Temperature Range|||TC||–40 to +150||C| |Operating Junction Temperature Range **(1,2)**|||TJ||–40 to +175||C| |Total Device Dissipation @ TC= 25C<br>Derate above 25C|||PD||272<br>1.82||W<br>W/C| |**Table 2. Thermal Characteristics**|||||||| |**Characteristic**|||**Symbol**||**Value (2,3)**||**Unit**| |Thermal Resistance, Junction to Case<br>CW: Case Temperature 76C, 300 W CW, 50 Vdc, IDQ= 50 mA, 40.68 MHz|||RJC||0.55||C/W| |Thermal Impedance, Junction to Case<br>Pulse: Case Temperature 74C, 300 W Peak, 100sec Pulse Width, 20% Duty Cycle,<br>50 Vdc, IDQ= 100 mA, 230 MHz|||ZJC||0.13||C/W| |**Table 3. ESD Protection Characteristics**|||||||| |**Test Methodology**|||||**Class**||| |Human Body Model (per JS--001--2017)|||2, passes 2500 V||||| |Charge Device Model (per JS--002--2014)|||C3, passes 1200 V||||| |**Table 4. Moisture Sensitivity Level**|||||||| |**Test Methodology**|**Rating**|**Package Peak Temperature**|||||**Unit**| |Per JESD22--A113, IPC/JEDEC J--STD--020|0|||260|||C| |**Table 5. Electrical Characteristics** (TA= 25C unless otherwise noted)|||||||| |**Characteristic**|**Symbol**|**Min**||**Typ**||**Max**|**Unit**| |**Off Characteristics**|||||||| |Gate--Source Leakage Current<br>(VGS= 5 Vdc, VDS= 0 Vdc)|IGSS|—||—||1|Adc| |Drain--Source Breakdown Voltage<br>(VGS= 0 Vdc, ID= 50 mAdc)|V(BR)DSS|133||—||—|Vdc| |Zero Gate Voltage Drain Leakage Current<br>(VDS= 100 Vdc, VGS= 0 Vdc)|IDSS|—||—||10|Adc| |**On Characteristics**|||||||| |Gate Threshold Voltage<br>(VDS= 10 Vdc, ID= 840Adc)|VGS(th)|1.7||2.2||2.7|Vdc| |Gate Quiescent Voltage<br>(VDS= 50 Vdc, ID= 100 mAdc)|VGS(Q)|—||2.5||—|Vdc| |Drain--Source On--Voltage<br>(VGS= 10 Vdc, ID= 1 Adc)|VDS(on)|—||0.16||—|Vdc| |Forward Transconductance<br>(VDS= 10 Vdc, ID= 30 Adc)|gfs|_—_||28||_—_|S| 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.nxp.com/RF/calculators. 3. Refer to AN1955, _Thermal Measurement Methodology of RF Power Amplifiers._ Go to http://www.nxp.com/RF and search for AN1955. (continued) **MRF300AN MRF300BN** RF Device Data NXP Semiconductors 2 **Table 5. Electrical Characteristics** (TA = 25C unless otherwise noted) **(continued)** |**Characteristic**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**| |---|---|---|---|---|---| |**Dynamic Characteristics**|||||| |Reverse Transfer Capacitance<br>(VDS= 50 Vdc30 mV(rms)ac @ 1 MHz, VGS= 0 Vdc)|Crss|—|2.31|—|pF| |Output Capacitance<br>(VDS= 50 Vdc30 mV(rms)ac @ 1 MHz, VGS= 0 Vdc)|Coss|—|104|—|pF| |Input Capacitance<br>(VDS= 50 Vdc, VGS= 0 Vdc30 mV(rms)ac @ 1 MHz)|Ciss|—|403|—|pF| |**Typical Narrowband Performance – 230 MHz**(In NXP Narrowband 230 MHz Fixture, 50 ohm system) VDD= 50 Vdc, IDQ= 100 mA,<br>Pin= 3 W, f = 230 MHz, 100sec Pulse Width, 20% Duty Cycle|||||| |Common--Source Amplifier Output Power|Pout|—|330|—|W| |Drain Efficiency|D|—|75.5|—|%| |Input Return Loss|IRL|—|–21|—|dB| **Table 6. Load Mismatch/Ruggedness** (In NXP Narrowband 230 MHz Fixture, 50 ohm system) IDQ = 100 mA |**Frequency**<br>**(MHz)**|**Signal Type**|**Signal Type**|**VSWR**|**Pin**<br>**(W)**|**Test Voltage, VDD**|**Test Voltage, VDD**|**Result**| |---|---|---|---|---|---|---|---| |230|Pulse<br>(100sec, 20% Duty Cycle)||> 65:1 at all<br>Phase Angles|6 Peak<br>(3 dB Overdrive)|50||No Device Degradation| |**Table 7. Ordering Information**|||||||| |**Device**|||**Shipping Information**||||**Package**| |MRF300AN||MPQ = 240 devices (30 devices per tube, 8 tubes per box)||||TO--247--3L (Pin 1: Gate,<br>Pin 2: Source, Pin 3: Drain)|| |MRF300BN||||||TO--247--3L (Pin 1: Drain,<br>Pin 2: Source, Pin 3: Gate)|| **MRF300AN MRF300BN** RF Device Data NXP Semiconductors 3 ## **TYPICAL CHARACTERISTICS** **==> picture [236 x 187] intentionally omitted <==** **----- Start of picture text -----**<br> 1000<br>Measured with 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc<br>Ciss<br>100<br>Coss<br>10<br>Crss<br>1<br>0 10 20 30 40 50<br>VDS, DRAIN--SOURCE VOLTAGE (VOLTS)<br>Note: Each side of device measured separately.<br>C, CAPACITANCE (pF)<br>**----- End of picture text -----**<br> **Figure 1. Capacitance versus Drain--Source Voltage** **==> picture [237 x 213] intentionally omitted <==** **----- Start of picture text -----**<br> 10 [8]<br>VDD = 50 Vdc<br>ID = 6.2 Amps<br>10 [7]<br>7.8 Amps<br>10 [6]<br>8.7 Amps<br>10 [5]<br>10 [4]<br>90 110 130 150 170 190<br>TJ, JUNCTION TEMPERATURE (C)<br>Note: MTTF value represents the total cumulative operating time<br>under indicated test conditions.<br>MTTF calculator available at http:/www.nxp.com/RF/calculators.<br>MTTF (HOURS)<br>**----- End of picture text -----**<br> **Figure 2. MTTF versus Junction Temperature — CW** **MRF300AN MRF300BN** RF Device Data NXP Semiconductors 4 ## **40.68 MHz NARROWBAND REFERENCE CIRCUIT (MRF300AN)** **Table 8. 40.68 MHz Narrowband Performance** (In NXP Reference Circuit, 50 ohm system) VDD = 50 Vdc, IDQ = 50 mA, Pin = 0.5 W, CW |**Frequency**<br>**(MHz)**|**Gps**<br>**(dB)**|**D**<br>**(%)**|**Pout**<br>**(W)**| |---|---|---|---| |40.68|28.2|79.0|330| **MRF300AN MRF300BN** RF Device Data NXP Semiconductors 5 ## **40.68 MHz NARROWBAND REFERENCE CIRCUIT (MRF300AN) — 2.0** **3.0** **(5.1 cm** **7.6 cm)** **==> picture [381 x 274] intentionally omitted <==** **----- Start of picture text -----**<br> R6<br>JP1<br>R5 R7<br>R8<br>J1<br>D1<br>C25 C26<br>J2 C34<br>R9<br>C27<br>C17<br>C12 C33<br>C13<br>B1<br>L6 C29<br>L3<br>C30<br>J3<br>C1<br>C18<br>R1<br>C19<br>C3<br>R2 Q1 C20 L5<br>L1<br>C21 C22<br>R3<br>L4<br>Rev. 0<br>Note: Component numbers C2, C4–C11, C14–C16, C23, C24, C28, C31, C32, aaa--030512<br>R4 and L2 are not used.<br>D108224<br>**----- End of picture text -----**<br> **Figure 3. MRF300AN 40.68 MHz Narrowband Reference Circuit Component Layout** **MRF300AN MRF300BN** RF Device Data NXP Semiconductors 6 ## **40.68 MHz NARROWBAND REFERENCE CIRCUIT (MRF300AN)** **Table 9. MRF300AN Narrowband Reference Circuit Component Designations and Values — 40.68 MHz** |**Part**|**Description**|**Part Number**|**Manufacturer**| |---|---|---|---| |B1|Long Ferrite Bead|2743021447|Fair-Rite| |C1, C13, C17|22,000 pF Chip Capacitor|ATC200B223KT50XT|ATC| |C3|200 pF Chip Capacitor|GQM2195C2A201GB12D|Murata| |C12|1F Chip Capacitor|GRM31CR72A105KA01L|Murata| |C18, C19, C20|68 pF Chip Capacitor|ATC100B680JT500XT|ATC| |C21|200 pF Chip Capacitor|ATC100B201JT300XT|ATC| |C22|220 pF Chip Capacitor|ATC100B221JT200XT|ATC| |C25|0.1F Chip Capacitor|GRM32NR72A104KA01B|Murata| |C26|10F Chip Capacitor|GRM32ER61H106KA12L|Murata| |C27|56 pF Chip Capacitor|ATC100B560CT500XT|ATC| |C29|75 pF Chip Capacitor|ATC100B750JT500XT|ATC| |C30|91 pF Chip Capacitor|ATC100B910JT500XT|ATC| |C33|5100 pF Chip Capacitor|ATC700B512KT50XT|ATC| |C34|220F, 63 V Electrolytic Capacitor|EEU-FC1J221|Panasonic| |D1|8.2 V Zener Diode|SMAJ4738A-TP|Micro Commercial Components| |J1|Right Angle Breakaway Headers (2 Pins)|9-146305-0|TE Connectivity| |J2, J3|Jumper|Copper Foil|| |JP1|Shunt (J1)|382811-8|TE Connectivity| |L1|120 nH Chip Inductor|1008CS-121XJLB|Coilcraft| |L3|117 nH Chip Inductor|1212VS-111MEB|Coilcraft| |L4|33 nH Chip Inductor|2014VS-33NMEB|Coilcraft| |L5|108 nH Chip Inductor|2014VS-111MEB|Coilcraft| |L6|155 nH Chip Inductor|2014VS-151MEB|Coilcraft| |Q1|RF Power LDMOS Transistor|MRF300AN|NXP| |R1, R3|0, 1/4 W Chip Resistor|CRCW12060000Z0EA|Vishay| |R2|100, 1/4 W Chip Resistor|CRCW1206100RFKEA|Vishay| |R5|12 k, 1/4 W Chip Resistor|CRCW120612K0FKEA|Vishay| |R6|27 k, 1/4 W Chip Resistor|CRCW120627K0FKEA|Vishay| |R7, R8|20 k, 1/4 W Chip Resistor|CRCW120620K0FKEA|Vishay| |R9|5.0 kMulti--turn Cermet Trimmer Potentiometer|3224W-1-502E|Bourns| |PCB|FR4 0.087,r= 4.8, 2 oz. Copper|D108224|MTL| **MRF300AN MRF300BN** RF Device Data NXP Semiconductors 7 ## **TYPICAL CHARACTERISTICS — 40.68 MHz NARROWBAND REFERENCE CIRCUIT (MRF300AN)** **==> picture [487 x 218] intentionally omitted <==** **----- Start of picture text -----**<br> 400 400<br>VDD = 50 Vdc, f = 40.68 MHz VDD = 50 Vdc, IDQ = 50 mA, f = 40.68 MHz<br>350 350<br>300 300<br>Pin = 0.5 W<br>250 250<br>Pin = 0.25 W<br>200 200<br>150 150<br>100 100<br>50 50<br>0 0<br>0 0.5 1 1.5 2 2.5 3 3.5 4 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9<br>VGS, GATE--SOURCE VOLTAGE (VOLTS) Pin, INPUT POWER (WATTS)<br>Figure 4. CW Output Power versus Gate--Source f P1dB P3dB<br>Voltage at a Constant Input Power (MHz) (W) (W)<br>40.68 250 340<br>, OUTPUT POWER (WATTS) , OUTPUT POWER (WATTS)<br>out out<br>P P<br>**----- End of picture text -----**<br> **Figure 5. CW Output Power versus Input Power** **==> picture [262 x 201] intentionally omitted <==** **----- Start of picture text -----**<br> 35 100<br>34 V DD = 50 Vdc, I DQ = 50 mA, f = 40.68 MHz 90<br>33 80<br>32 70<br>31 Gps 60<br>30 50<br>29 40<br>D<br>28 30<br>27 20<br>26 10<br>25 0<br>0 50 100 150 200 250 300 350 400<br>Pout, OUTPUT POWER (WATTS)<br>Figure 6. Power Gain and Drain Efficiency<br>versus CW Output Power<br>, POWER GAIN (dB)<br>ps DRAIN EFFICIENCY (%)<br>G D,<br><br>**----- End of picture text -----**<br> **MRF300AN MRF300BN** RF Device Data NXP Semiconductors 8 ## **40.68 MHz NARROWBAND REFERENCE CIRCUIT (MRF300AN)** **==> picture [308 x 170] intentionally omitted <==** **----- Start of picture text -----**<br> f Zsource Zload<br>MHz <br>40.68 7.83 + j13.51 5.34 + j1.03<br>Zsource = Test circuit impedance as measured from<br>gate to ground.<br>Zload = Test circuit impedance as measured from<br>drain to ground.<br>Input Device Output<br>Matching Under Matching<br>50 Network Test Network 50 <br>Zsource Zload<br>**----- End of picture text -----**<br> **Figure 7. Narrowband Series Equivalent Source and Load Impedance — 40.68 MHz** **MRF300AN MRF300BN** RF Device Data NXP Semiconductors 9 **230 MHz NARROWBAND FIXTURE (MRF300AN) — 4.0** **5.0** **(10.2 cm** **12.7 cm)** |||||||||| |---|---|---|---|---|---|---|---|---| |**Figure 8. MRF300AN Narrowband Fixture Component Layout — 230 MHz**<br>_a_<br>C1<br>C2<br>C4<br>C3<br>C5<br>B1<br>R1<br>C14<br>L2<br>C9<br>C11<br>C12<br>C10<br>C13<br>C16<br>C15<br>C8<br>C6<br>C7<br>L1<br>MRF300AN<br>Rev. 0<br>D110614<br>cut out<br>area<br>**Table 10. MRF300AN Narrowband Fixture Component Designations and Values — 230 MHz**|C1<br>C2<br>C4<br>C3<br>C5<br>B1<br>R1<br><br>L2<br>C9<br>C1<br>C8<br>C6<br>C7<br>L1<br>MRF300AN<br>Rev. 0<br>cut out<br>area||cut out<br>area|||C14<br>C11<br>C12<br>0<br>C13<br>C16<br>C15<br>D110614||| |||||||||C17| |||||||||| |**Part**||**Description**|||**Part Number**|||**Manufacturer**| |B1||Long Ferrite Bead|||2743021447|||Fair-Rite| |C1||47F, 16 V Tantalum Capacitor|||T491D476K016AT|||Kemet| |C2||2.2F Chip Capacitor|||C3225X7R1H225K250AB|||TDK| |C3||10 nF Chip Capacitor|||C1210C103J5GACTU|||Kemet| |C4||0.1F Chip Capacitor|||GRM319R72A104KA01D|||Murata| |C5, C9||1000 pF Chip Capacitor|||ATC800B102JT50XT|||ATC| |C6, C7||18 pF Chip Capacitor|||ATC100B180JT500XT|||ATC| |C8, C14||56 pF Chip Capacitor|||ATC100B560CT500XT|||ATC| |C10||0.1F Chip Capacitor|||C1812104K1RACTU|||Kemet| |C11||2.2F Chip Capacitor|||C3225X7R2A225K230AB|||TDK| |C12||2.2F Chip Capacitor|||HMK432B7225KM-T|||Taiyo Yuden| |C13||220F, 100 V Electrolytic Capacitor|||MCGPR100V227M16X26|||Multicomp| |C15||1.2 pF Chip Capacitor|||ATC100B1R2BT500XT|||ATC| |C16||24 pF Chip Capacitor|||ATC100B240JT500XT|||ATC| |C17||470 pF Chip Capacitor|||ATC800B471JT200XT|||ATC| |L1||47 nH Chip Inductor|||1812SMS-47NJLC|||Coilcraft| |L2||146 nH Chip Inductor|||1010VS-141NME|||Coilcraft| |R1||4701/4 W Chip Resistor|||CRCW1206470RFKEA|||Vishay| |PCB||Rogers AD255C 0.030,r= 2.55, 2 oz. Copper|||D110614|||MTL| ## **MRF300AN MRF300BN** RF Device Data NXP Semiconductors 10 ## **TYPICAL CHARACTERISTICS — 230 MHz, TC = 25** _ **C NARROWBAND FIXTURE (MRF300AN)** **==> picture [237 x 172] intentionally omitted <==** **----- Start of picture text -----**<br> 400<br>VDD = 50 Vdc, f = 230 MHz<br>350 Pulse Width = 100 sec, 20% Duty Cycle<br>300<br>Pin = 3.0 W<br>250<br>200<br>Pin = 1.5 W<br>150<br>100<br>50<br>0<br>0 0.5 1 1.5 2 2.5 3<br>VGS, GATE--SOURCE VOLTAGE (VOLTS)<br>, OUTPUT POWER (WATTS) PEAK<br>out<br>P<br>**----- End of picture text -----**<br> **Figure 9. Output Power versus Gate--Source Voltage at a Constant Input Power** **==> picture [510 x 218] intentionally omitted <==** **----- Start of picture text -----**<br> 57 24 100<br>VDD = 50 Vdc, IDQ = 100 mA, f = 230 MHz VDD = 50 Vdc, f = 230 MHz, Pulse Width = 100 sec, 20% Duty Cycle<br>55<br>Pulse Width = 100 sec, 20% Duty Cycle IDQ = 900 mA Gps<br>53 22 80<br>600 mA<br>51<br>300 mA<br>49 20 60<br>47 100 mA<br>45 18 900 mA 40<br>43 D 600 mA<br>41 16 20<br>300 mA<br>39<br>100 mA<br>37 14 0<br>18 21 24 27 30 33 36 39 5 10 100 500<br>Pin, INPUT POWER (dBm) PEAK Pout, OUTPUT POWER (WATTS) PEAK<br>f P1dB P3dB Figure 11. Power Gain and Drain Efficiency<br>(MHz) (W) (W) versus Output Power and Quiescent Current<br>230 334 382<br>, POWER GAIN (dB)<br>ps DRAIN EFFICIENCY (%)<br>G D,<br>, OUTPUT POWER (dBm) PEAK <br>out<br>P<br>**----- End of picture text -----**<br> **Figure 10. Output Power versus Input Power** **==> picture [490 x 174] intentionally omitted <==** **----- Start of picture text -----**<br> 23 80 24<br>VDD = 50 Vdc, IDQ = 100 mA, f = 230 MHz IDQ = 100 mA, f = 230 MHz<br>22 Pulse Width = 100 sec, 20% Duty Cycle 70 Pulse Width = 100 sec, 20% Duty Cycle<br>22<br>Gps<br>21 60<br>20<br>20 50<br>D 18<br>50 V<br>19 40<br>45 V<br>16<br>18 30 40 V<br>35 V<br>14<br>17 20<br>VDD = 30 V<br>16 10 12<br>5 50 500 0 50 100 150 200 250 300 350 400 450<br>Pout, OUTPUT POWER (WATTS) PEAK Pout, OUTPUT POWER (WATTS) PEAK<br>, POWER GAIN (dB) , POWER GAIN (dB)<br>Gps DRAIN EFFICIENCY (%)D, Gps<br><br>**----- End of picture text -----**<br> **Figure 12. Power Gain and Drain Efficiency versus Output Power** **Figure 13. Power Gain versus Output Power and Drain--Source Voltage** **MRF300AN MRF300BN** RF Device Data NXP Semiconductors 11 **230 MHz NARROWBAND FIXTURE (MRF300AN)** **==> picture [308 x 170] intentionally omitted <==** **----- Start of picture text -----**<br> f Zsource Zload<br>MHz <br>230 1.77 + j1.90 2.50 + j0.78<br>Zsource = Test circuit impedance as measured from<br>gate to ground.<br>Zload = Test circuit impedance as measured from<br>drain to ground.<br>Input Device Output<br>Matching Under Matching<br>50 Network Test Network 50 <br>Zsource Zload<br>**----- End of picture text -----**<br> **Figure 14. Narrowband Series Equivalent Source and Load Impedance — 230 MHz** **MRF300AN MRF300BN** RF Device Data NXP Semiconductors 12 ## **PACKAGE DIMENSIONS** **MRF300AN MRF300BN** RF Device Data NXP Semiconductors 13 **MRF300AN MRF300BN** RF Device Data NXP Semiconductors 14 **MRF300AN MRF300BN** RF Device Data NXP Semiconductors 15 ## **PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS** Refer to the following resources to aid your design process. ## **Application Notes** - AN1907: Solder Reflow Attach Method for High Power RF Devices in Over--Molded Plastic Packages - AN1955: Thermal Measurement Methodology of RF Power Amplifiers ## **Engineering Bulletins** - EB212: Using Data Sheet Impedances for RF LDMOS Devices ## **Software** - Electromigration MTTF Calculator - RF High Power Model - .s2p File ## **Development Tools** - Printed Circuit Boards ## **To Download Resources Specific to a Given Part Number:** 1. Go to http://www.nxp.com/RF 2. Search by part number 3. Click part number link 4. Choose the desired resource from the drop down menu ## **REVISION HISTORY** The following table summarizes revisions to this document. |**Revision**|**Date**|**Description**| |---|---|---| |0|May 2018|<br>Initial release of data sheet| **MRF300AN MRF300BN** RF Device Data NXP Semiconductors 16 ## _**How to Reach Us:**_ **Home Page:** nxp.com **Web Support:** nxp.com/support Information in this document is provided solely to enable system and software implementers to use NXP products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits based on the information in this document. NXP reserves the right to make changes without further notice to any products herein. NXP makes no warranty, representation, or guarantee regarding the suitability of its products for any particular purpose, nor does NXP assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters that may be provided in NXP data sheets and/or specifications can and do vary in different applications, and actual performance may vary over time. All operating parameters, including “typicals,” must be validated for each customer application by customer’s technical experts. NXP does not convey any license under its patent rights nor the rights of others. NXP sells products pursuant to standard terms and conditions of sale, which can be found at the following address: nxp.com/SalesTermsandConditions. NXP and the NXP logo are trademarks of NXP B.V. All other product or service names are the property of their respective owners. E 2018 NXP B.V. **MRF300AN MRF300BN** RF Device DataDocument Number: MRF300AN NXP SemiconductorsRev. 0, 05/2018 17
Updated at April 10, 2026
NXP Semiconductors is a global leader in secure connectivity solutions, driving innovation across the automotive, industrial, IoT, mobile, and communications infrastructure markets. By developing advanced, purpose-built technologies, NXP enables devices to sense, think, connect, and act intelligently, delivering rigorously tested components that make the connected world safer and more efficient. Within the semiconductor space, NXP is highly regarded for its extensive range of high-performance integrated circuits and discrete devices. The brand's portfolio excels in drivers and interfaces, featuring a comprehensive selection of I/O expanders designed to streamline complex system architectures. For demanding high-frequency and wireless applications, NXP provides industry-leading RF FETs and RF/PIN diodes engineered to deliver exceptional signal integrity, efficiency, and reliability. The NXP product lineup further extends to essential discrete components, including versatile bipolar transistors, JFETs, and small signal diodes optimized for precision switching and amplification. Additionally, the portfolio supports advanced automation and smart applications with precision IC sensors, such as MEMS accelerometers, alongside specialized power management solutions like AC/DC LED driver ICs and single MOSFETs for cutting-edge electronics design.
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