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MRF300AN
RF FET Transistor, 133 V, 272 W, 1.8 MHz, 250 MHz, TO-247
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- Manufacturer: NXP
- Product type: RF FETs
- Drain Source Voltage Vds:133V; Continuous Drain Current Id:-; Power Dissipation Pd:272W; Operating Frequency Min:1.8MHz; Operating Frequency Max:250MHz; RF Transistor Case:TO-247; No. of Pin
- MSL: -
- SVHC: No SVHC (27-Jun-2024)
- No. of Pins: 3Pins
- Channel Type: N Channel
- Product Range: MRF300AN; MRF300BN
- Power Dissipation: 272W
- Transistor Mounting: Through Hole
- Transistor Case Style: TO-247
- Operating Frequency Max: 250MHz
- Operating Frequency Min: 1.8MHz
- Drain Source Voltage Vds: 133V
- Operating Temperature Max: 175°C
- Continuous Drain Current Id: -
| Delivery and price | |
|---|---|
| Units per pack | 5 |
| Price | 149.95 € |
| Current stock | 100+ |
| Lead time | 30 days |
Datasheet
**NXP Semiconductors** Technical Data Document Number: MRF300AN Rev. 2, 06/2019 ## **RF Power LDMOS Transistors** High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs These devices are designed for use in HF and VHF communications, industrial, scientific and medical (ISM) and broadcast and aerospace applications. The devices are extremely rugged and exhibit high performance up to 250 MHz. **Typical Performance:** VDD = 50 Vdc **Frequency Pout Gps** **D (MHz) Signal Type (W) (dB) (%)** 13.56 **[(1)]** 320 CW 28.1 79.7 27 **[(2)]** 330 CW 27.4 80.0 40.68 **[(3)]** 330 CW 28.2 79.0 CW 50 **[(4)]** 320 CW 27.3 73.0 81.36 **[(5)]** 325 CW 25.1 77.5 144 **[(6)]** 320 CW 23.0 73.0 230 **[(7)]** Pulse 330 Peak 20.4 75.5 (100 sec, 20% Duty Cycle) ~~=—===~~ **Load Mismatch/Ruggedness Frequency Pin Test (MHz) Signal Type VSWR (W) Voltage Result** 40.68 Pulse > 65:1 at all 2 Peak 50 No Device (100 sec, 20% Phase (3 dB Degradation Duty Cycle) Angles Overdrive) 230 Pulse > 65:1 at all 6 Peak 50 No Device (100 sec, 20% Phase (3 dB Degradation Duty Cycle) Angles Overdrive) ~~aaa~~ 1. Measured in 13.56 MHz reference circuit (page 5). 2. Measured in 27 MHz reference circuit (page 10). D D G 3. Measured in 40.68 MHz reference circuit (page 15). 4. Measured in 50 MHz reference circuit (page 20). 5. Measured in 81.36 MHz reference circuit (page 25). 6. Measured in 144 MHz reference circuit (page 30). 7. Measured in 230 MHz fixture (page 35). ## **MRF300AN MRF300BN** **1.8–250 MHz, 300 W CW, 50 V WIDEBAND RF POWER LDMOS TRANSISTORS** **==> picture [24 x 21] intentionally omitted <==** **----- Start of picture text -----**<br> G<br>S<br>D<br>**----- End of picture text -----**<br> **==> picture [44 x 17] intentionally omitted <==** **----- Start of picture text -----**<br> TO--247--3<br>MRF300AN<br>**----- End of picture text -----**<br> **==> picture [69 x 46] intentionally omitted <==** **----- Start of picture text -----**<br> D<br>S<br>G<br>TO--247--3<br>MRF300BN<br>**----- End of picture text -----**<br> ## **Features** - Mirror pinout versions (A and B) to simplify use in a push--pull, two--up configuration **==> picture [6 x 7] intentionally omitted <==** **----- Start of picture text -----**<br> S<br>**----- End of picture text -----**<br> - Characterized from 30 to 50 V - Suitable for linear application - Integrated ESD protection with greater negative gate--source voltage range for improved Class C operation - Included in NXP product longevity program with assured supply for a minimum of 15 years after launch ## **Backside** Note: Exposed backside of the package also serves as a source terminal for the transistor. ## **Typical Applications** - Industrial, scientific, medical (ISM) - Laser generation - Plasma etching - Particle accelerators - MRI and other medical applications - Industrial heating, welding and drying systems - Radio and VHF TV broadcast - HF and VHF communications - Switch mode power supplies **MRF300AN MRF300BN** 2018–2019 NXP B.V. RF Device Data NXP Semiconductors 1 ## **Table 1. Maximum Ratings** |**Table 1. Maximum Ratings**|**Table 1. Maximum Ratings**|**Table 1. Maximum Ratings**|||||| |---|---|---|---|---|---|---|---| |**Rating**|||**Symbol**||**Value**||**Unit**| |Drain--Source Voltage|||VDSS||–0.5, +133||Vdc| |Gate--Source Voltage|||VGS||–6.0, +10||Vdc| |Operating Voltage|||VDD||50||Vdc| |Storage Temperature Range|||Tstg||–65 to +150||C| |Case Operating Temperature Range|||TC||–40 to +150||C| |Operating Junction Temperature Range **(1,2)**|||TJ||–40 to +175||C| |Total Device Dissipation @ TC= 25C<br>Derate above 25C|||PD||272<br>1.82||W<br>W/C| |**Table 2. Thermal Characteristics**|||||||| |**Characteristic**|||**Symbol**||**Value (2,3)**||**Unit**| |Thermal Resistance, Junction to Case<br>CW: Case Temperature 76C, 300 W CW, 50 Vdc, IDQ= 50 mA, 40.68 MHz|||RJC||0.55||C/W| |Thermal Impedance, Junction to Case<br>Pulse: Case Temperature 74C, 300 W Peak, 100sec Pulse Width, 20% Duty Cycle,<br>50 Vdc, IDQ= 100 mA, 230 MHz|||ZJC||0.13||C/W| |**Table 3. ESD Protection Characteristics**|||||||| |**Test Methodology**|||||**Class**||| |Human Body Model (per JS--001--2017)|||2, passes 2500 V||||| |Charge Device Model (per JS--002--2014)|||C3, passes 1200 V||||| |**Table 4. Moisture Sensitivity Level**|||||||| |**Test Methodology**|**Rating**|**Package Peak Temperature**|||||**Unit**| |Per JESD22--A113, IPC/JEDEC J--STD--020|0|||225 **(4)**|||C| |**Table 5. Electrical Characteristics** (TA= 25C unless otherwise noted)|||||||| |**Characteristic**|**Symbol**|**Min**||**Typ**||**Max**|**Unit**| |**Off Characteristics**|||||||| |Gate--Source Leakage Current<br>(VGS= 5 Vdc, VDS= 0 Vdc)|IGSS|—||—||1|Adc| |Drain--Source Breakdown Voltage<br>(VGS= 0 Vdc, ID= 50 mAdc)|V(BR)DSS|133||—||—|Vdc| |Zero Gate Voltage Drain Leakage Current<br>(VDS= 100 Vdc, VGS= 0 Vdc)|IDSS|—||—||10|Adc| |**On Characteristics**|||||||| |Gate Threshold Voltage<br>(VDS= 10 Vdc, ID= 840Adc)|VGS(th)|1.7||2.2||2.7|Vdc| |Gate Quiescent Voltage<br>(VDS= 50 Vdc, ID= 100 mAdc)|VGS(Q)|—||2.5||—|Vdc| |Drain--Source On--Voltage<br>(VGS= 10 Vdc, ID= 1 Adc)|VDS(on)|—||0.16||—|Vdc| |Forward Transconductance<br>(VDS= 10 Vdc, ID= 30 Adc)|gfs|_—_||28||_—_|S| 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.nxp.com/RF/calculators. 3. Refer to AN1955, _Thermal Measurement Methodology of RF Power Amplifiers._ Go to http://www.nxp.com/RF and search for AN1955. 4. Peak temperature during reflow process must not exceed 225C. (continued) **MRF300AN MRF300BN** RF Device Data NXP Semiconductors 2 **Table 5. Electrical Characteristics** (TA = 25C unless otherwise noted) **(continued)** |**Characteristic**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**| |---|---|---|---|---|---| |**Dynamic Characteristics**|||||| |Reverse Transfer Capacitance<br>(VDS= 50 Vdc30 mV(rms)ac @ 1 MHz, VGS= 0 Vdc)|Crss|—|2.31|—|pF| |Output Capacitance<br>(VDS= 50 Vdc30 mV(rms)ac @ 1 MHz, VGS= 0 Vdc)|Coss|—|104|—|pF| |Input Capacitance<br>(VDS= 50 Vdc, VGS= 0 Vdc30 mV(rms)ac @ 1 MHz)|Ciss|—|403|—|pF| |**Typical Performance — 230 MHz**(In NXP 230 MHz Fixture, 50 ohm system) VDD= 50 Vdc, IDQ= 100 mA, Pin= 3 W, f = 230 MHz,<br>100sec Pulse Width, 20% Duty Cycle|||||| |Common--Source Amplifier Output Power|Pout|—|330|—|W| |Drain Efficiency|D|—|75.5|—|%| |Input Return Loss|IRL|—|–21|—|dB| ## **Table 6. Load Mismatch/Ruggedness** (In NXP 230 MHz Fixture, 50 ohm system) IDQ = 100 mA |**Frequency**<br>**(MHz)**|**Signal Type**|**Signal Type**|**VSWR**|**Pin**<br>**(W)**|**Test Voltage, VDD**|**Test Voltage, VDD**|**Result**| |---|---|---|---|---|---|---|---| |230|Pulse<br>(100sec, 20% Duty Cycle)||> 65:1 at all<br>Phase Angles|6 Peak<br>(3 dB Overdrive)|50||No Device Degradation| |**Table 7. Ordering Information — Device**|||||||| |**Device**||**Shipping Information**|||||**Package**| |MRF300AN||MPQ = 240 devices (30 devices per tube, 8 tubes per box)||||TO--247--3L (Pin 1: Gate,<br>Pin 2: Source, Pin 3: Drain)|| |MRF300BN||||||TO--247--3L (Pin 1: Drain,<br>Pin 2: Source, Pin 3: Gate)|| ## **Table 8. Ordering Information — Reference Circuits** |**Order Number**|**Description**| |---|---| |MRF300AN-13MHZ|MRF300AN 13.56 MHz Reference Circuit| |MRF300AN-27MHZ|MRF300AN 27 MHz Reference Circuit| |MRF300AN-40MHZ|MRF300AN 40.68 MHz Reference Circuit| |MRF300AN-50MHZ|MRF300AN 50 MHz Reference Circuit| |MRF300AN-81MHZ|MRF300AN 81.36 MHz Reference Circuit| |MRF300AN-144MHZ|MRF300AN 144 MHz Reference Circuit| |MRF300AN-230MHZ|MRF300AN 230 MHz Test Fixture| **MRF300AN MRF300BN** RF Device Data NXP Semiconductors 3 ## **TYPICAL CHARACTERISTICS** **==> picture [236 x 173] intentionally omitted <==** **----- Start of picture text -----**<br> 1000<br>Measured with 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc<br>Ciss<br>100<br>Coss<br>10<br>Crss<br>1<br>0 10 20 30 40 50<br>VDS, DRAIN--SOURCE VOLTAGE (VOLTS)<br>C, CAPACITANCE (pF)<br>**----- End of picture text -----**<br> **Figure 1. Capacitance versus Drain--Source Voltage** **==> picture [237 x 213] intentionally omitted <==** **----- Start of picture text -----**<br> 10 [8]<br>VDD = 50 Vdc<br>ID = 6.2 Amps<br>10 [7]<br>7.8 Amps<br>10 [6]<br>8.7 Amps<br>10 [5]<br>10 [4]<br>90 110 130 150 170 190<br>TJ, JUNCTION TEMPERATURE (C)<br>Note: MTTF value represents the total cumulative operating time<br>under indicated test conditions.<br>MTTF calculator available at http://www.nxp.com/RF/calculators.<br>MTTF (HOURS)<br>**----- End of picture text -----**<br> **Figure 2. MTTF versus Junction Temperature — CW** **MRF300AN MRF300BN** RF Device Data NXP Semiconductors 4 ## **13.56 MHz REFERENCE CIRCUIT (MRF300AN)** **Table 9. 13.56 MHz Performance** (In NXP Reference Circuit, 50 ohm system) VDD = 50 Vdc, IDQ = 100 mA, Pin = 0.5 W, CW |**Frequency**<br>**(MHz)**|**Pout**<br>**(W)**|**Gps**<br>**(dB)**|**D**<br>**(%)**| |---|---|---|---| |13.56|320|28.1|79.7| **MRF300AN MRF300BN** RF Device Data NXP Semiconductors 5 ## **13.56 MHz REFERENCE CIRCUIT (MRF300AN) — 2** **3** **(5.1 cm** **7.6 cm)** **==> picture [380 x 254] intentionally omitted <==** **----- Start of picture text -----**<br> R4<br>C14<br>R3 R5 C7 C8 C 11<br>R6 J1<br>D1<br>JP1<br>L3<br>R2<br>C6 C9<br>C10<br>J2<br>C5 C4<br>L4<br>C13<br>C12 J4 C3<br>C2<br>L5<br>L1<br>L2<br>R1<br>J3<br>C1<br>Q1<br>Rev. 0<br>D108224<br>**----- End of picture text -----**<br> **==> picture [35 x 6] intentionally omitted <==** **----- Start of picture text -----**<br> aaa--034124<br>**----- End of picture text -----**<br> **Figure 3. MRF300AN 13.56 MHz Reference Circuit Component Layout** **MRF300AN MRF300BN** RF Device Data NXP Semiconductors 6 ## **13.56 MHz REFERENCE CIRCUIT (MRF300AN)** **Table 10. MRF300AN Reference Circuit Component Designations and Values — 13.56 MHz** |**Part**|**Description**|**Part Number**|**Manufacturer**| |---|---|---|---| |C1|1 nF Chip Capacitor|GRM2165C2A102JA01D|Murata| |C2, C3, C4|430 pF Chip Capacitor|800B431JT200XT|ATC| |C5|75 pF Chip Capacitor|800B750JT500XT|ATC| |C6|330 pF Chip Capacitor|800B331JT200XT|ATC| |C7, C8, C9, C10|6.8 nF Chip Capacitor|GRM32QR73A682KW01L|Murata| |C11|10F Chip Capacitor|GRM32EC72A106KE05L|Murata| |C12|10 nF Chip Capacitor|GRM21BR72A103KA01B|Murata| |C13|1F Chip Capacitor|GJ821BR71H105KA12L|Murata| |C14|220F, 100 V Electrolytic Capacitor|MCGPR100V227M16X26|Multicomp| |D1|8.2 V Zener Diode|SMAJ4738A--TP|Micro Commercial Components| |J1|Right Angle Breakaway Headers (2 Pins)|9-146305-0|TE Connectivity| |J2, J3, J4|Jumper|Copper Foil|| |JP1|Shunt (J1)|382811-8|TE Connectivity| |L1|390 nH Chip Inductor|0805CS-391XJLC|ATC| |L2|33 nF Air Core Inductor|2014VS-33NMEB|Coilcraft| |L3, L4|140 nH Air Core Inductor|1010VS-141ME|Coilcraft| |L5|250 nH Air Core Inductor|2014VS-251NMEB|Coilcraft| |Q1|RF Power LDMOS Transistor|MRF300AN|NXP| |R1|33, 1/8 W Chip Resistor|CRCW080533R0FKEA|KOA Speer| |R2|5.0 kMulti-turn Cermet Trimming Potentiometer|3224W-1-502E|Bourns| |R3|12 k, 1/4 W Chip Resistor|CRCW120612K0FNEA|Vishay| |R4|27 k, 1/4 W Chip Resistor|CRCW120627K0FKEA|Vishay| |R5, R6|20 k, 1/4 W Chip Resistor|CRCW120620K0FKEA|Vishay| |PCB|FR4 0.087,r= 4.8, 2 oz. Copper|D108224|MTL| **MRF300AN MRF300BN** RF Device Data NXP Semiconductors 7 ## **TYPICAL CHARACTERISTICS — 13.56 MHz REFERENCE CIRCUIT (MRF300AN)** **==> picture [487 x 218] intentionally omitted <==** **----- Start of picture text -----**<br> 350 350<br>VDD = 50 Vdc, f = 13.56 MHz, CW<br>300 300<br>Pin = 0.5 W<br>250 250<br>Pin = 0.25 W<br>200 200<br>150 150<br>100 100<br>50 50<br>VDD = 50 Vdc, IDQ = 100 mA, f = 13.56 MHz, CW<br>0 0<br>0 0.5 1 1.5 2 2.5 3 3.5 4 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9<br>VGS, GATE--SOURCE VOLTAGE (VOLTS) Pin, INPUT POWER (WATTS)<br>Figure 4. CW Output Power versus Gate--Source f P1dB P3dB<br>Voltage at a Constant Input Power (MHz) (W) (W)<br>13.56 285 322<br>, OUTPUT POWER (WATTS) , OUTPUT POWER (WATTS)<br>out out<br>P P<br>**----- End of picture text -----**<br> **Figure 5. CW Output Power versus Input Power** **==> picture [262 x 201] intentionally omitted <==** **----- Start of picture text -----**<br> 34 100<br>33 VDD = 50 Vdc, IDQ = 100 mA, f = 13.56 MHz, CW 90<br>32 80<br>31 70<br>Gps<br>30 60<br>29 50<br>28 40<br>D<br>27 30<br>26 20<br>25 10<br>24 0<br>0 50 100 150 200 250 300 350<br>Pout, OUTPUT POWER (WATTS)<br>Figure 6. Power Gain and Drain Efficiency<br>versus CW Output Power<br>, POWER GAIN (dB)<br>ps DRAIN EFFICIENCY (%)<br>G D,<br><br>**----- End of picture text -----**<br> **MRF300AN MRF300BN** RF Device Data NXP Semiconductors 8 ## **13.56 MHz REFERENCE CIRCUIT (MRF300AN)** **==> picture [308 x 170] intentionally omitted <==** **----- Start of picture text -----**<br> f Zsource Zload<br>(MHz) <br>13.56 12.0 + j5.2 5.1 – j1.0<br>Zsource = Test circuit impedance as measured from<br>gate to ground.<br>Zload = Test circuit impedance as measured from<br>drain to ground.<br>Input Device Output<br>Matching Under Matching<br>50 Network Test Network 50 <br>Zsource Zload<br>**----- End of picture text -----**<br> **Figure 7. Series Equivalent Source and Load Impedance — 13.56 MHz** **MRF300AN MRF300BN** RF Device Data NXP Semiconductors 9 ## **27 MHz REFERENCE CIRCUIT (MRF300AN)** **Table 11. 27 MHz Performance** (In NXP Reference Circuit, 50 ohm system) VDD = 50 Vdc, IDQ = 100 mA, Pin = 0.6 W, CW |**Frequency**<br>**(MHz)**|**Pout**<br>**(W)**|**Gps**<br>**(dB)**|**D**<br>**(%)**| |---|---|---|---| |27|330|27.4|80.0| **MRF300AN MRF300BN** RF Device Data NXP Semiconductors 10 **27 MHz REFERENCE CIRCUIT (MRF300AN) — 2** **3** **(5.1 cm** **7.6 cm)** **==> picture [381 x 265] intentionally omitted <==** **----- Start of picture text -----**<br> R4 C17<br>R3 R5 C7 C8 C9<br>R6 J1<br>D1<br>JP1<br>L3<br>R7<br>C12<br>C4 C16<br>C13<br>C5<br>J2<br>B1<br>L4 C14<br>J2<br>L6 C15<br>C1<br>C2<br>L1<br>L2 R2 C6 L7<br>C3<br>L5<br>R1<br>C10 C 11<br>Q1<br>Rev. 0<br>aaa--034170<br>D108224<br>**----- End of picture text -----**<br> **Figure 8. MRF300AN 27 MHz Reference Circuit Component Layout** **MRF300AN MRF300BN** RF Device Data NXP Semiconductors 11 ## **27 MHz REFERENCE CIRCUIT (MRF300AN)** ## **Table 12. MRF300AN Reference Circuit Component Designations and Values — 27 MHz** |**Part**|**Description**|**Part Number**|**Manufacturer**| |---|---|---|---| |B1|Long Ferrite Bead|2743021447|Fair-Rite| |C1, C5, C7, C16|39,000 pF Chip Capacitor|200B393KT50XT|ATC| |C2|120 pF Chip Capacitor|GQM2195C2E121GB12D|Murata| |C3|200 pF Chip Capacitor|GQM2195C2A201GB12D|Murata| |C4|1F Chip Capacitor|GRM31CR72A105KA01L|Murata| |C6|27 pF Chip Capacitor|100B270JT500XT|ATC| |C8|0.1F Chip Capacitor|GRM32NR72A104KA01B|Murata| |C9|10F Chip Capacitor|GRM32ER61H106KA12L|Murata| |C10|220 pF Chip Capacitor|100B221JT200XT|ATC| |C11|120 pF Chip Capacitor|100B121JT300XT|ATC| |C12|30 pF Chip Capacitor|100B300JT500XT|ATC| |C13, C14|56 pF Chip Capacitor|100B560CT500XT|ATC| |C15|200 pF Chip Capacitor|100B201JT300XT|ATC| |C17|220F, 63 V Electrolytic Capacitor|EEU-FC1J221|Panasonic-ECG| |D1|8.2 V Zener Diode|SMAJ4738A--TP|Micro Commercial Components| |J1|Right Angle Breakaway Headers (2 Pins)|9-146305-0|TE Connectivity| |J2|Jumper|Copper Foil|| |JP1|Shunt (J1)|382811-8|TE Connectivity| |L1, L2|180 nH Chip Inductor|1008CS-181XJLB|Coilcraft| |L3, L4|110 nH Air Core Inductor|1212VS-111MEB|Coilcraft| |L5|33 nH Air Core Inductor|2014VS-33NMEB|Coilcraft| |L6|155 nH Air Core Inductor|2014VS-151MEB|Coilcraft| |L7|90 nH Air Core Inductor|1212VS-90NME|Coilcraft| |Q1|RF Power LDMOS Transistor|MRF300AN|NXP| |R1|51, 1/4 W Chip Resistor|CRCW120651R0FKEA|Vishay| |R2|100, 1/4 W Chip Resistor|CRCW1206100RFKEA|Vishay| |R3|12 k, 1/4 W Chip Resistor|CRCW120612K0JNEA|Vishay| |R4|27 k, 1/4 W Chip Resistor|CRCW120627K0FKEA|Vishay| |R5, R6|20 k, 1/4 W Chip Resistor|CRCW120620K0FKEA|Vishay| |R7|5.0 kMulti--turn Cermet Trimmer Potentiometer|3224W-1-502E|Bourns| |PCB|FR4 0.087,r= 4.8, 2 oz. Copper|D108224|MTL| **MRF300AN MRF300BN** RF Device Data NXP Semiconductors 12 ## **TYPICAL CHARACTERISTICS — 27 MHz REFERENCE CIRCUIT (MRF300AN)** **==> picture [487 x 218] intentionally omitted <==** **----- Start of picture text -----**<br> 400 400<br>VDD = 50 Vdc, f = 27 MHz, CW<br>350 350<br>Pin = 0.6 W<br>300 300<br>250 250<br>200 200<br>Pin = 0.3 W<br>150 150<br>100 100<br>50 50<br>VDD = 50 Vdc, IDQ = 100 mA, f = 27 MHz, CW<br>0 0<br>0 0.5 1 1.5 2 2.5 3 3.5 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1<br>VGS, GATE--SOURCE VOLTAGE (VOLTS) Pin, INPUT POWER (WATTS)<br>Figure 9. CW Output Power versus Gate--Source f P1dB P3dB<br>Voltage at a Constant Input Power (MHz) (W) (W)<br>27 310 365<br>, OUTPUT POWER (WATTS) , OUTPUT POWER (WATTS)<br>out out<br>P P<br>**----- End of picture text -----**<br> **Figure 10. CW Output Power versus Input Power** **==> picture [262 x 200] intentionally omitted <==** **----- Start of picture text -----**<br> 30 90<br>VDD = 50 Vdc, IDQ = 100 mA, f = 27 MHz, CW<br>29 80<br>Gps<br>28 70<br>27 60<br>D<br>26 50<br>25 40<br>24 30<br>50 100 150 200 250 300 350 400<br>Pout, OUTPUT POWER (WATTS)<br>Figure 11. Power Gain and Drain Efficiency<br>versus CW Output Power<br>, POWER GAIN (dB)<br>ps DRAIN EFFICIENCY (%)<br>G D,<br><br>**----- End of picture text -----**<br> **MRF300AN MRF300BN** RF Device Data NXP Semiconductors 13 ## **27 MHz REFERENCE CIRCUIT (MRF300AN)** **==> picture [308 x 170] intentionally omitted <==** **----- Start of picture text -----**<br> f Zsource Zload<br>(MHz) <br>27 32.13 + j11.22 4.47 + j0.45<br>Zsource = Test circuit impedance as measured from<br>gate to ground.<br>Zload = Test circuit impedance as measured from<br>drain to ground.<br>Input Device Output<br>Matching Under Matching<br>50 Network Test Network 50 <br>Zsource Zload<br>**----- End of picture text -----**<br> **Figure 12. Series Equivalent Source and Load Impedance — 27 MHz** **MRF300AN MRF300BN** RF Device Data NXP Semiconductors 14 ## **40.68 MHz REFERENCE CIRCUIT (MRF300AN)** **Table 13. 40.68 MHz Performance** (In NXP Reference Circuit, 50 ohm system) VDD = 50 Vdc, IDQ = 100 mA, Pin = 0.5 W, CW |**Frequency**<br>**(MHz)**|**Pout**<br>**(W)**|**Gps**<br>**(dB)**|**D**<br>**(%)**| |---|---|---|---| |40.68|330|28.2|79.0| **MRF300AN MRF300BN** RF Device Data NXP Semiconductors 15 ## **40.68 MHz REFERENCE CIRCUIT (MRF300AN) — 2** **3** **(5.1 cm** **7.6 cm)** **==> picture [381 x 274] intentionally omitted <==** **----- Start of picture text -----**<br> R6<br>R5 R7 JP1<br>R8<br>J1<br>D1<br>C25 C26<br>J2 C34<br>R9<br>C27<br>C17<br>C12 C33<br>C13<br>B1<br>L6 C29<br>L3<br>J3 C30<br>C1<br>C18<br>R1<br>C19<br>C3<br>C20 L5<br>R2<br>L1<br>C21 C22<br>R3<br>Q1<br>L4<br>Rev. 0<br>Note: Component numbers C2, C4–C11, C14–C16, C23, C24, C28, C31, C32, aaa--030512<br>L2 and R4 are not used.<br>D108224<br>**----- End of picture text -----**<br> **Figure 13. MRF300AN 40.68 MHz Reference Circuit Component Layout** **MRF300AN MRF300BN** RF Device Data NXP Semiconductors 16 ## **40.68 MHz REFERENCE CIRCUIT (MRF300AN)** **Table 14. MRF300AN Reference Circuit Component Designations and Values — 40.68 MHz** |**Part**|**Description**|**Part Number**|**Manufacturer**| |---|---|---|---| |B1|Long Ferrite Bead|2743021447|Fair-Rite| |C1, C13, C17|22,000 pF Chip Capacitor|ATC200B223KT50XT|ATC| |C3|200 pF Chip Capacitor|GQM2195C2A201GB12D|Murata| |C12|1F Chip Capacitor|GRM31CR72A105KA01L|Murata| |C18, C19, C20|68 pF Chip Capacitor|ATC100B680JT500XT|ATC| |C21|200 pF Chip Capacitor|ATC100B201JT300XT|ATC| |C22|220 pF Chip Capacitor|ATC100B221JT200XT|ATC| |C25|0.1F Chip Capacitor|GRM32NR72A104KA01B|Murata| |C26|10F Chip Capacitor|GRM32ER61H106KA12L|Murata| |C27|56 pF Chip Capacitor|ATC100B560CT500XT|ATC| |C29|75 pF Chip Capacitor|ATC100B750JT500XT|ATC| |C30|91 pF Chip Capacitor|ATC100B910JT500XT|ATC| |C33|5100 pF Chip Capacitor|ATC700B512KT50XT|ATC| |C34|220F, 63 V Electrolytic Capacitor|EEU-FC1J221|Panasonic| |D1|8.2 V Zener Diode|SMAJ4738A--TP|Micro Commercial Components| |J1|Right Angle Breakaway Headers (2 Pins)|9-146305-0|TE Connectivity| |J2, J3|Jumper|Copper Foil|| |JP1|Shunt (J1)|382811-8|TE Connectivity| |L1|120 nH Chip Inductor|1008CS-121XJLB|Coilcraft| |L3|117 nH Air Core Inductor|1212VS-111MEB|Coilcraft| |L4|33 nH Air Core Inductor|2014VS-33NMEB|Coilcraft| |L5|108 nH Air Core Inductor|2014VS-111MEB|Coilcraft| |L6|155 nH Air Core Inductor|2014VS-151MEB|Coilcraft| |Q1|RF Power LDMOS Transistor|MRF300AN|NXP| |R1, R3|0, 1/4 W Chip Resistor|CRCW12060000Z0EA|Vishay| |R2|100, 1/4 W Chip Resistor|CRCW1206100RFKEA|Vishay| |R5|12 k, 1/4 W Chip Resistor|CRCW120612K0FKEA|Vishay| |R6|27 k, 1/4 W Chip Resistor|CRCW120627K0FKEA|Vishay| |R7, R8|20 k, 1/4 W Chip Resistor|CRCW120620K0FKEA|Vishay| |R9|5.0 kMulti--turn Cermet Trimmer Potentiometer|3224W-1-502E|Bourns| |PCB|FR4 0.087,r= 4.8, 2 oz. Copper|D108224|MTL| **MRF300AN MRF300BN** RF Device Data NXP Semiconductors 17 ## **TYPICAL CHARACTERISTICS — 40.68 MHz REFERENCE CIRCUIT (MRF300AN)** **==> picture [487 x 218] intentionally omitted <==** **----- Start of picture text -----**<br> 400 400<br>VDD = 50 Vdc, f = 40.68 MHz, CW VDD = 50 Vdc, IDQ = 100 mA, f = 40.68 MHz, CW<br>350 350<br>300 300<br>Pin = 0.5 W<br>250 250<br>Pin = 0.25 W<br>200 200<br>150 150<br>100 100<br>50 50<br>0 0<br>0 0.5 1 1.5 2 2.5 3 3.5 4 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9<br>VGS, GATE--SOURCE VOLTAGE (VOLTS) Pin, INPUT POWER (WATTS)<br>Figure 14. CW Output Power versus f P1dB P3dB<br>Gate--Source Voltage at a Constant Input Power (MHz) (W) (W)<br>40.68 250 340<br>, OUTPUT POWER (WATTS) , OUTPUT POWER (WATTS)<br>out out<br>P P<br>**----- End of picture text -----**<br> **Figure 15. CW Output Power versus Input Power** **==> picture [262 x 201] intentionally omitted <==** **----- Start of picture text -----**<br> 35 100<br>34 VDD = 50 Vdc, IDQ = 100 mA, f = 40.68 MHz, CW 90<br>33 80<br>32 70<br>31 Gps 60<br>30 50<br>29 40<br>D<br>28 30<br>27 20<br>26 10<br>25 0<br>0 50 100 150 200 250 300 350 400<br>Pout, OUTPUT POWER (WATTS)<br>Figure 16. Power Gain and Drain Efficiency<br>versus CW Output Power<br>, POWER GAIN (dB)<br>ps DRAIN EFFICIENCY (%)<br>G D,<br><br>**----- End of picture text -----**<br> **MRF300AN MRF300BN** RF Device Data NXP Semiconductors 18 ## **40.68 MHz REFERENCE CIRCUIT (MRF300AN)** **==> picture [308 x 170] intentionally omitted <==** **----- Start of picture text -----**<br> f Zsource Zload<br>(MHz) ( ) ( )<br>40.68 7.83 + j13.51 5.34 + j1.03<br>Zsource = Test circuit impedance as measured from<br>gate to ground.<br>Zload = Test circuit impedance as measured from<br>drain to ground.<br>Input Device Output<br>Matching Under Matching<br>50 Network Test Network 50 <br>Zsource Zload<br>**----- End of picture text -----**<br> **Figure 17. Series Equivalent Source and Load Impedance — 40.68 MHz** **MRF300AN MRF300BN** RF Device Data NXP Semiconductors 19 ## **50 MHz REFERENCE CIRCUIT (MRF300AN)** **Table 15. 50 MHz Performance** (In NXP Reference Circuit, 50 ohm system) VDD = 50 Vdc, IDQ = 100 mA, Pin = 0.6 W, CW |**Frequency**<br>**(MHz)**|**Pout**<br>**(W)**|**Gps**<br>**(dB)**|**D**<br>**(%)**| |---|---|---|---| |50|320|27.3|73.0| **MRF300AN MRF300BN** RF Device Data NXP Semiconductors 20 **50 MHz REFERENCE CIRCUIT (MRF300AN) — 2** **3** **(5.1 cm** **7.6 cm)** **==> picture [381 x 265] intentionally omitted <==** **----- Start of picture text -----**<br> R5 C16<br>R4 R6 JP1 C10 C 11<br>R7 J1<br>D1<br>J2<br>R8<br>C12<br>C5<br>C3 C15<br>J2 C4<br>B1<br>L2 C13<br>J3<br>L5 C14<br>C1<br>C6<br>R1<br>L1 C2 C7 L3 L4<br>R2<br>R3 C8 C9<br>Q1<br>Rev. 0<br>aaa--034173<br>D108224<br>**----- End of picture text -----**<br> **Figure 18. MRF300AN 50 MHz Reference Circuit Component Layout** **MRF300AN MRF300BN** RF Device Data NXP Semiconductors 21 ## **50 MHz REFERENCE CIRCUIT (MRF300AN)** ## **Table 16. MRF300AN Reference Circuit Component Designations and Values — 50 MHz** |**Part**|**Description**|**Part Number**|**Manufacturer**| |---|---|---|---| |B1|Long Ferrite Bead|2743021447|Fair-Rite| |C1, C4, C5, C15|10,000 pF Chip Capacitor|200B103KT50XT|ATC| |C2|180 pF Chip Capacitor|GQM2195C2A181GB12D|Murata| |C3|1F Chip Capacitor|GRM31CR72A105KA01L|Murata| |C6|56 pF Chip Capacitor|100B560CT500XT|ATC| |C7, C13|68 pF Chip Capacitor|100B680JT500XT|ATC| |C8, C9|180 pF Chip Capacitor|100B181JT300XT|ATC| |C10|0.1F Chip Capacitor|12101C104KAT4A|AVX| |C11|10F Chip Capacitor|GRM32ER61H106KA12L|Murata| |C12|82 pF Chip Capacitor|100B820JT500XT|ATC| |C14|110 pF Chip Capacitor|100B111JT300XT|ATC| |C16|220F, 63 V Electrolytic Capacitor|EEU-FC1J221|Panasonic| |D1|8.2 V Zener Diode|SMAJ4738A--TP|Micro Commercial Components| |J1|Right Angle Breakaway Headers (2 Pins)|9-146305-0|TE Connectivity| |J2, J3|Jumper|Copper Foil|| |JP1|Shunt (J1)|382811-8|TE Connectivity| |L1|82 nH Air Core Inductor|1812SMS-82NJLC|Coilcraft| |L2|110 nH Air Core Inductor|1212VS-111MEB|Coilcraft| |L3|22 nH Air Core Inductor|1212VS-22NME|Coilcraft| |L4|90 nH Air Core Inductor|1212VS-90NME|Coilcraft| |L5|150 nH Air Core Inductor|2014VS-151MEB|Coilcraft| |Q1|RF Power LDMOS Transistor|MRF300AN|NXP| |R1, R3|0, 1/4 W Chip Resistor|CRCW12060000Z0EA|Vishay| |R2|100, 1/4 W Chip Resistor|CRCW1206100RFKEA|Vishay| |R4|12 k, 1/4 W Chip Resistor|CRCW120612K0FNEA|Vishay| |R5|27 k, 1/4 W Chip Resistor|CRCW120627K0FKEA|Vishay| |R6, R7|20 k, 1/4 W Chip Resistor|CRCW120620K0FKEA|Vishay| |R8|5.0 kMulti-turn Cermet Trimmer Potentiometer|3224W-1-502E|Bourns| |PCB|FR4 0.087,r= 4.8, 2 oz. Copper|D108224|MTL| **MRF300AN MRF300BN** RF Device Data NXP Semiconductors 22 ## **TYPICAL CHARACTERISTICS — 50 MHz REFERENCE CIRCUIT (MRF300AN)** **==> picture [486 x 218] intentionally omitted <==** **----- Start of picture text -----**<br> 400 400<br>VDD = 50 Vdc, f = 50 MHz, CW VDD = 50 Vdc, IDQ = 100 mA, f = 50 MHz, CW<br>350 350<br>300 300<br>Pin = 0.6 W<br>250 250<br>200 200<br>Pin = 0.3 W<br>150 150<br>100 100<br>50 50<br>0 0<br>0 0.5 1 1.5 2 2.5 3 3.5 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1<br>VGS, GATE--SOURCE VOLTAGE (VOLTS) Pin, INPUT POWER (WATTS)<br>Figure 19. CW Output Power versus f P1dB P3dB<br>Gate--Source Voltage at a Constant Input Power (MHz) (W) (W)<br>50 260 340<br>, OUTPUT POWER (WATTS) , OUTPUT POWER (WATTS)<br>out out<br>P P<br>**----- End of picture text -----**<br> **Figure 20. CW Output Power versus Input Power** **==> picture [262 x 201] intentionally omitted <==** **----- Start of picture text -----**<br> 31 90<br>VDD = 50 Vdc, IDQ = 100 mA, f = 50 MHz, CW<br>30 80<br>Gps<br>29 70<br>28 60<br>27 50<br>D<br>26 40<br>25 30<br>24 20<br>0 50 100 150 200 250 300 350 400<br>Pout, OUTPUT POWER (WATTS)<br>Figure 21. Power Gain and Drain Efficiency<br>versus CW Output Power<br>, POWER GAIN (dB)<br>ps DRAIN EFFICIENCY (%)<br>G D,<br><br>**----- End of picture text -----**<br> **MRF300AN MRF300BN** RF Device Data NXP Semiconductors 23 ## **50 MHz REFERENCE CIRCUIT (MRF300AN)** **==> picture [308 x 170] intentionally omitted <==** **----- Start of picture text -----**<br> f Zsource Zload<br>(MHz) <br>50 6.44 + j12.27 5.05 + j1.36<br>Zsource = Test circuit impedance as measured from<br>gate to ground.<br>Zload = Test circuit impedance as measured from<br>drain to ground.<br>Input Device Output<br>Matching Under Matching<br>50 Network Test Network 50 <br>Zsource Zload<br>**----- End of picture text -----**<br> **Figure 22. Series Equivalent Source and Load Impedance — 50 MHz** **MRF300AN MRF300BN** RF Device Data NXP Semiconductors 24 ## **81.36 MHz REFERENCE CIRCUIT (MRF300AN)** **Table 17. 81.36 MHz Performance** (In NXP Reference Circuit, 50 ohm system) VDD = 50 Vdc, IDQ = 100 mA, Pin = 1 W, CW |**Frequency**<br>**(MHz)**|**Pout**<br>**(W)**|**Gps**<br>**(dB)**|**D**<br>**(%)**| |---|---|---|---| |81.36|325|25.1|77.5| **MRF300AN MRF300BN** RF Device Data NXP Semiconductors 25 ## **81.36 MHz REFERENCE CIRCUIT (MRF300AN) — 2** **3** **(5.1 cm** **7.6 cm)** **==> picture [381 x 265] intentionally omitted <==** **----- Start of picture text -----**<br> R4<br>R3 R5 JP1 C7 C8 C9 C17<br>R6 J1<br>D1<br>J2<br>R7<br>C12<br>C4 C16<br>C13<br>J2 C5<br>B1 L5<br>L3 C14<br>J3<br>C15<br>C1<br>L1 C2<br>C3 C6 L6<br>L4<br>R2<br>L2<br>C10 C 11<br>R1<br>Q1<br>Rev. 0<br>aaa--034174<br>D108224<br>**----- End of picture text -----**<br> **Figure 23. MRF300AN 81.36 MHz Reference Circuit Component Layout** **MRF300AN MRF300BN** RF Device Data NXP Semiconductors 26 ## **81.36 MHz REFERENCE CIRCUIT (MRF300AN)** **Table 18. MRF300AN Reference Circuit Component Designations and Values — 81.36 MHz** |**Part**|**Description**|**Part Number**|**Manufacturer**| |---|---|---|---| |B1|Long Ferrite Bead|2743021447|Fair-Rite| |C1, C5, C7, C16|4,700 pF Chip Capacitor|700B472KT50XT|ATC| |C2|120 pF Chip Capacitor|GQM2195C2E121GB12D|Murata| |C3|47 pF Chip Capacitor|GQM2195C2E470GB12D|Murata| |C4|1F Chip Capacitor|GRM31CR72A105KA01L|Murata| |C6|30 pF Chip Capacitor|100B300JT500XT|ATC| |C8|0.1F Chip Capacitor|GRM32NR72A104KA01B|Murata| |C9|10F Chip Capacitor|GRM32ER61H106KA12L|Murata| |C10|91 pF Chip Capacitor|100B910JT500XT|ATC| |C11|82 pF Chip Capacitor|100B820JT500XT|ATC| |C12|51 pF Chip Capacitor|100B510GT500XT|ATC| |C13|22 pF Chip Capacitor|100B220JT500XT|ATC| |C14|12 pF Chip Capacitor|100B120JT500XT|ATC| |C15|33 pF Chip Capacitor|100B330JT500XT|ATC| |C17|220F, 63 V Electrolytic Capacitor|EEU-FC1J221|Panasonic| |D1|8.2 V Zener Diode|SMAJ4738A--TP|Micro Commercial Components| |J1|Right Angle Breakaway Headers (2 Pins)|9-146305-0|TE Connectivity| |J2, J3|Jumper|Copper Foil|| |JP1|Shunt (J1)|382811-8|TE Connectivity| |L1|12.3 nH Square Air Core Inductor|0806SQ-12NJL|Coilcraft| |L2|19 nH Square Air Core Inductor|0806SQ-19NJL|Coilcraft| |L3|117 nH Air Core Inductor|1212VS-111MEB|Coilcraft| |L4|22 nH Air Core Inductor|1212VS-22NMEB|Coilcraft| |L5, L6|42 nH Air Core Inductor|1212VS-42NMEB|Coilcraft| |Q1|RF Power LDMOS Transistor|MRF300AN|NXP| |R1|0, 1/4 W Chip Resistor|CRCW12060000Z0EA|Vishay| |R2|100, 1/4 W Chip Resistor|CRCW1206100RFKEA|Vishay| |R3|12 k, 1/4 W Chip Resistor|CRCW120612K0JNEA|Vishay| |R4|27 k, 1/4 W Chip Resistor|CRCW120627K0FKEA|Vishay| |R5, R6|20 k, 1/4 W Chip Resistor|CRCW120620K0FKEA|Vishay| |R7|5.0 kMulti--turn Cermet Trimmer Potentiometer|3224W-1-502E|Bourns| |PCB|FR4 0.087,r= 4.8, 2 oz. Copper|D108224|MTL| **MRF300AN MRF300BN** RF Device Data NXP Semiconductors 27 ## **TYPICAL CHARACTERISTICS — 81.36 MHz REFERENCE CIRCUIT (MRF300AN)** **==> picture [487 x 218] intentionally omitted <==** **----- Start of picture text -----**<br> 400 400<br>VDD = 50 Vdc, f = 81.36 MHz, CW VDD = 50 Vdc, IDQ = 100 mA, f = 81.36 MHz, CW<br>350 350<br>300 300<br>Pin = 1 W<br>250 250<br>Pin = 0.5 W<br>200 200<br>150 150<br>100 100<br>50 50<br>0 0<br>0 0.5 1 1.5 2 2.5 3 3.5 0 0.2 0.4 0.6 0.8 1 1.2 1.4<br>VGS, GATE--SOURCE VOLTAGE (VOLTS) Pin, INPUT POWER (WATTS)<br>Figure 24. CW Output Power versus f P1dB P3dB<br>Gate--Source Voltage at a Constant Input Power (MHz) (W) (W)<br>81.36 260 335<br>, OUTPUT POWER (WATTS) , OUTPUT POWER (WATTS)<br>out out<br>P P<br>**----- End of picture text -----**<br> **Figure 25. CW Output Power versus Input Power** **==> picture [262 x 201] intentionally omitted <==** **----- Start of picture text -----**<br> 29 90<br>VDD = 50 Vdc, IDQ = 100 mA, f = 81.36 MHz, CW<br>28 80<br>Gps<br>27 70<br>26 60<br>D<br>25 50<br>24 40<br>23 30<br>0 50 100 150 200 250 300 350 400<br>Pout, OUTPUT POWER (WATTS)<br>Figure 26. Power Gain and Drain Efficiency<br>versus CW Output Power<br>, POWER GAIN (dB)<br>ps DRAIN EFFICIENCY (%)<br>G D,<br><br>**----- End of picture text -----**<br> **MRF300AN MRF300BN** RF Device Data NXP Semiconductors 28 ## **81.36 MHz REFERENCE CIRCUIT (MRF300AN)** **==> picture [308 x 170] intentionally omitted <==** **----- Start of picture text -----**<br> f Zsource Zload<br>(MHz) <br>81.36 3.86 + j7.90 4.45 + j3.53<br>Zsource = Test circuit impedance as measured from<br>gate to ground.<br>Zload = Test circuit impedance as measured from<br>drain to ground.<br>Input Device Output<br>Matching Under Matching<br>50 Network Test Network 50 <br>Zsource Zload<br>**----- End of picture text -----**<br> **Figure 27. Series Equivalent Source and Load Impedance — 81.36 MHz** **MRF300AN MRF300BN** RF Device Data NXP Semiconductors 29 ## **144 MHz REFERENCE CIRCUIT (MRF300AN)** **Table 19. 144 MHz Performance** (In NXP Reference Circuit, 50 ohm system) VDD = 50 Vdc, IDQ = 100 mA, Pin = 1.6 W, CW |**Frequency**<br>**(MHz)**|**Pout**<br>**(W)**|**Gps**<br>**(dB)**|**D**<br>**(%)**| |---|---|---|---| |144|320|23.0|73.0| **MRF300AN MRF300BN** RF Device Data NXP Semiconductors 30 **144 MHz REFERENCE CIRCUIT (MRF300AN) — 2** **3** **(5.1 cm** **7.6 cm)** **==> picture [381 x 265] intentionally omitted <==** **----- Start of picture text -----**<br> R6 VDS<br>R5 R7 JP1 C10 C 11 C15<br>R8 J1<br>D1<br>J2<br>R4<br>C5 C12<br>C3 C14<br>J2 C4<br>B1 C13<br>L2<br>J3<br>L5<br>C1<br>R1<br>C2 C6 J4 L6 L4<br>L3<br>C7<br>L1 R2<br>R3 C8 C9<br>Q1<br>Rev. 0<br>aaa--034175<br>D108224<br>**----- End of picture text -----**<br> **Figure 28. MRF300AN 144 MHz Reference Circuit Component Layout** **MRF300AN MRF300BN** RF Device Data NXP Semiconductors 31 ## **144 MHz REFERENCE CIRCUIT (MRF300AN)** ## **Table 20. MRF300AN Reference Circuit Component Designations and Values — 144 MHz** |**Part**|**Description**|**Part Number**|**Manufacturer**| |---|---|---|---| |B1|Long Ferrite Bead|2743021447|Fair-Rite| |C1, C4, C5, C14|1,000 pF Chip Capacitor|100B102JT50XT|ATC| |C2|120 pF Chip Capacitor|GQM2195C2A121GB12D|Murata| |C3|1F Chip Capacitor|GRM31CR72A105KA01L|Murata| |C6, C8|30 pF Chip Capacitor|100B300JT500XT|ATC| |C7|5.6 pF Chip Capacitor|100B5R6CT500XT|ATC| |C9|24 pF Chip Capacitor|100B240JT500XT|ATC| |C10|0.1F Chip Capacitor|GRM32NR72A104KA01B|Murata| |C11|10F Chip Capacitor|GRM32ER61H106KA12L|Murata| |C12|33 pF Chip Capacitor|100B330JT500XT|ATC| |C13|3.9 pF Chip Capacitor|100B3R9CT500XT|ATC| |C15|220F, 63 V Electrolytic Capacitor|EEU-FC1J221|Panasonic| |D1|8.2 V Zener Diode|SMAJ4738A--TP|Micro Commercial Components| |J1|Right Angle Breakaway Headers (2 Pins)|9-146305-0|TE Connectivity| |J2, J3, J4|Jumper|Copper Foil|| |JP1|Shunt (J1)|382811-8|TE Connectivity| |L1|7.15 nH Air Core Inductor|1606-7JLC|Coilcraft| |L2|110 nH Air Core Inductor|1212VS-111MEB|Coilcraft| |L3|22 nH Air Core Inductor|1212VS-22NME|Coilcraft| |L4, L5|33 nH Air Core Inductor|2014VS-33NME|Coilcraft| |Q1|RF Power LDMOS Transistor|MRF300AN|NXP| |R1, R3|0, 1/4 W Chip Resistor|CRCW12060000Z0EA|Vishay| |R2|100, 1/4 W Chip Resistor|CRCW1206100RFKEA|Vishay| |R4|5.0 kMulti-turn Cermet Trimmer Potentiometer|3224W-1-502E|Bourns| |R5|12 k, 1/4 W Chip Resistor|CRCW120612K0JNEA|Vishay| |R6|27 k, 1/4 W Chip Resistor|CRCW120627K0JNEA|Vishay| |R7, R8|20 k, 1/4 W Chip Resistor|CRCW120620K0JNEA|Vishay| |PCB|FR4 0.087,r= 4.8, 2 oz. Copper|D108224|MTL| **MRF300AN MRF300BN** RF Device Data NXP Semiconductors 32 ## **TYPICAL CHARACTERISTICS — 144 MHz REFERENCE CIRCUIT (MRF300AN)** **==> picture [484 x 218] intentionally omitted <==** **----- Start of picture text -----**<br> 350 350<br>VDD = 50 Vdc, f = 144 MHz, CW VDD = 50 Vdc, IDQ = 100 mA, f = 144 MHz, CW<br>300 300<br>Pin = 1.6 W<br>250 250<br>200 200<br>Pin = 0.8 W<br>150 150<br>100 100<br>50 50<br>0 0<br>0 0.5 1 1.5 2 2.5 3 3.5 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2<br>VGS, GATE--SOURCE VOLTAGE (VOLTS) Pin, INPUT POWER (WATTS)<br>Figure 29. CW Output Power versus f P1dB P3dB<br>Gate--Source Voltage at a Constant Input Power (MHz) (W) (W)<br>144 275 320<br>, OUTPUT POWER (WATTS) , OUTPUT POWER (WATTS)<br>out out<br>P P<br>**----- End of picture text -----**<br> **Figure 30. CW Output Power versus Input Power** **==> picture [262 x 175] intentionally omitted <==** **----- Start of picture text -----**<br> 26 80<br>Gps<br>25 70<br>24 60<br>D<br>23 50<br>22 40<br>VDD = 50 Vdc, IDQ = 100 mA, f = 144 MHz, CW<br>21 30<br>50 100 150 200 250 300 350<br>Pout, OUTPUT POWER (WATTS)<br>, POWER GAIN (dB)<br>ps DRAIN EFFICIENCY (%)<br>G D,<br><br>**----- End of picture text -----**<br> **Figure 31. Power Gain and Drain Efficiency versus CW Output Power** **MRF300AN MRF300BN** RF Device Data NXP Semiconductors 33 ## **144 MHz REFERENCE CIRCUIT (MRF300AN)** **==> picture [308 x 170] intentionally omitted <==** **----- Start of picture text -----**<br> f Zsource Zload<br>(MHz) <br>144 1.62 + j6.44 4.32 + j2.06<br>Zsource = Test circuit impedance as measured from<br>gate to ground.<br>Zload = Test circuit impedance as measured from<br>drain to ground.<br>Input Device Output<br>Matching Under Matching<br>50 Network Test Network 50 <br>Zsource Zload<br>**----- End of picture text -----**<br> **Figure 32. Series Equivalent Source and Load Impedance — 144 MHz** **MRF300AN MRF300BN** RF Device Data NXP Semiconductors 34 **230 MHz FIXTURE (MRF300AN) — 4** **5** **(10.2 cm** **12.7 cm)** **==> picture [380 x 302] intentionally omitted <==** **----- Start of picture text -----**<br> C12<br>C10<br>C1 C9 C11 C13<br>C2 C4<br>B1<br>C3 C5 cut out<br>area L2<br>MRF300AN D110614<br>Rev. 0<br>R1<br>C6<br>C16 C17<br>C15<br>L1 C8 C14<br>C7<br>aaa--030511<br>**----- End of picture text -----**<br> **Figure 33. MRF300AN Fixture Component Layout — 230 MHz** **Table 21. MRF300AN Fixture Component Designations and Values — 230 MHz** |**Part**|**Description**|**Part Number**|**Manufacturer**| |---|---|---|---| |B1|Long Ferrite Bead|2743021447|Fair-Rite| |C1|47F, 16 V Tantalum Capacitor|T491D476K016AT|Kemet| |C2|2.2F Chip Capacitor|C3225X7R1H225K250AB|TDK| |C3|10 nF Chip Capacitor|C1210C103J5GACTU|Kemet| |C4|0.1F Chip Capacitor|GRM319R72A104KA01D|Murata| |C5, C9|1000 pF Chip Capacitor|ATC800B102JT50XT|ATC| |C6, C7|18 pF Chip Capacitor|ATC100B180JT500XT|ATC| |C8, C14|56 pF Chip Capacitor|ATC100B560CT500XT|ATC| |C10|0.1F Chip Capacitor|C1812104K1RACTU|Kemet| |C11|2.2F Chip Capacitor|C3225X7R2A225K230AB|TDK| |C12|2.2F Chip Capacitor|HMK432B7225KM-T|Taiyo Yuden| |C13|220F, 100 V Electrolytic Capacitor|MCGPR100V227M16X26|Multicomp| |C15|1.2 pF Chip Capacitor|ATC100B1R2BT500XT|ATC| |C16|24 pF Chip Capacitor|ATC100B240JT500XT|ATC| |C17|470 pF Chip Capacitor|ATC800B471JT200XT|ATC| |L1|47 nH Air Core Inductor|1812SMS-47NJLC|Coilcraft| |L2|146 nH Air Core Inductor|1010VS-141NME|Coilcraft| |R1|4701/4 W Chip Resistor|CRCW1206470RFKEA|Vishay| |PCB|Rogers AD255C 0.030,r= 2.55, 2 oz. Copper|D110614|MTL| |||**MRF300AN MRF300BN**|| RF Device Data NXP Semiconductors 35 ## **TYPICAL CHARACTERISTICS — 230 MHz, TC = 25** _ **C FIXTURE (MRF300AN)** **==> picture [510 x 658] intentionally omitted <==** **----- Start of picture text -----**<br> 400<br>VDD = 50 Vdc, f = 230 MHz<br>350 Pulse Width = 100 sec, 20% Duty Cycle<br>300<br>Pin = 3.0 W<br>250<br>200<br>Pin = 1.5 W<br>150<br>100<br>50<br>0<br>0 0.5 1 1.5 2 2.5 3<br>VGS, GATE--SOURCE VOLTAGE (VOLTS)<br>Figure 34. Output Power versus Gate--Source<br>Voltage at a Constant Input Power<br>57 24 100<br>VDD = 50 Vdc, IDQ = 100 mA, f = 230 MHz VDD = 50 Vdc, f = 230 MHz, Pulse Width = 100 sec, 20% Duty Cycle<br>55<br>Pulse Width = 100 sec, 20% Duty Cycle IDQ = 900 mA Gps<br>53 22 80<br>600 mA<br>51<br>300 mA<br>49 20 60<br>47 100 mA<br>45 18 900 mA 40<br>43 D 600 mA<br>41 16 20<br>300 mA<br>39<br>100 mA<br>37 14 0<br>18 21 24 27 30 33 36 39 5 10 100 500<br>Pin, INPUT POWER (dBm) PEAK Pout, OUTPUT POWER (WATTS) PEAK<br>f P1dB P3dB Figure 36. Power Gain and Drain Efficiency<br>(MHz) (W) (W) versus Output Power and Quiescent Current<br>230 334 382<br>Figure 35. Output Power versus Input Power<br>23 80 24<br>VDD = 50 Vdc, IDQ = 100 mA, f = 230 MHz IDQ = 100 mA, f = 230 MHz<br>22 Pulse Width = 100 sec, 20% Duty Cycle 70 Pulse Width = 100 sec, 20% Duty Cycle<br>22<br>Gps<br>21 60<br>20<br>20 50<br>D 18<br>50 V<br>19 40<br>45 V<br>16<br>18 30 40 V<br>35 V<br>14<br>17 20<br>VDD = 30 V<br>16 10 12<br>5 50 500 0 50 100 150 200 250 300 350 400 450<br>Pout, OUTPUT POWER (WATTS) PEAK Pout, OUTPUT POWER (WATTS) PEAK<br>Figure 37. Power Gain and Drain Efficiency Figure 38. Power Gain versus Output Power<br>versus Output Power and Drain--Source Voltage<br>, OUTPUT POWER (WATTS) PEAK<br>out<br>P<br>, POWER GAIN (dB)<br>ps DRAIN EFFICIENCY (%)<br>G D,<br>, OUTPUT POWER (dBm) PEAK <br>out<br>P<br>, POWER GAIN (dB) , POWER GAIN (dB)<br>Gps DRAIN EFFICIENCY (%)D, Gps<br><br>**----- End of picture text -----**<br> **Figure 37. Power Gain and Drain Efficiency versus Output Power** **MRF300AN MRF300BN** RF Device Data NXP Semiconductors 36 ## **230 MHz FIXTURE (MRF300AN)** **==> picture [308 x 170] intentionally omitted <==** **----- Start of picture text -----**<br> f Zsource Zload<br>(MHz) <br>230 1.77 + j1.90 2.50 + j0.78<br>Zsource = Test circuit impedance as measured from<br>gate to ground.<br>Zload = Test circuit impedance as measured from<br>drain to ground.<br>Input Device Output<br>Matching Under Matching<br>50 Network Test Network 50 <br>Zsource Zload<br>**----- End of picture text -----**<br> **Figure 39. Series Equivalent Source and Load Impedance — 230 MHz** **MRF300AN MRF300BN** RF Device Data NXP Semiconductors 37 ## **PACKAGE DIMENSIONS** **MRF300AN MRF300BN** RF Device Data NXP Semiconductors 38 **MRF300AN MRF300BN** RF Device Data NXP Semiconductors 39 **MRF300AN MRF300BN** RF Device Data NXP Semiconductors 40 ## **PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS** Refer to the following resources to aid your design process. ## **Application Notes** - AN1955: Thermal Measurement Methodology of RF Power Amplifiers ## **Engineering Bulletins** - EB212: Using Data Sheet Impedances for RF LDMOS Devices ## **Software** - Electromigration MTTF Calculator - RF High Power Model - .s2p File ## **Development Tools** - Printed Circuit Boards ## **To Download Resources Specific to a Given Part Number:** 1. Go to http://www.nxp.com/RF 2. Search by part number 3. Click part number link 4. Choose the desired resource from the drop down menu ## **REVISION HISTORY** The following table summarizes revisions to this document. |**Revision**|**Date**|**Description**| |---|---|---| |0|May 2018|<br>Initial release of data sheet| |1|Jan. 2019|<br>Typical Performance table: added 13.56, 50 and 144 MHz reference circuits and updated 81.36 MHz data,<br>p. 1<br><br>Package photos: added backside photo, p. 1<br><br>Table 4, Moisture Sensitivity Level: added footnote “Peak temperature during reflow process must not<br>exceed 225C.” Updated table, p. 2.<br><br>Fig. 1, Capacitance versus Drain--Source Voltage: removed note as not applicable to graph, p. 4<br><br>Table 8, 40.68 MHz Performance table; Fig. 5, CW Output Power versus Input Power; and Fig. 6, Power<br>Gain and Drain Efficiency versus CW Output Power: corrected bias value to 100 mA to reflect actual<br>measurement used in data sheet, pp. 5, 8<br><br>Package Outline Drawing: TO--247--3 package outline updated to Rev. A, pp. 13–15<br><br>General updates made to align data sheet to current standard| |2|June 2019|<br>Typical Performance table: updated values for 27 MHz, 50 MHz, 81.36 MHz and 144 MHz reference<br>circuits, p. 1<br><br>Added 13.56 MHz reference circuit, pp. 5–9<br><br>Added 27 MHz reference circuit, pp. 10–14<br><br>Added 50 MHz reference circuit, pp. 20–24<br><br>Added 81.36 MHz reference circuit, pp. 25–29<br><br>Added 144 MHz reference circuit, pp. 30–34| **MRF300AN MRF300BN** RF Device Data NXP Semiconductors 41 **==> picture [506 x 36] intentionally omitted <==** ## _**How to Reach Us:**_ **Home Page:** nxp.com **Web Support:** nxp.com/support Information in this document is provided solely to enable system and software implementers to use NXP products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits based on the information in this document. NXP reserves the right to make changes without further notice to any products herein. NXP makes no warranty, representation, or guarantee regarding the suitability of its products for any particular purpose, nor does NXP assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters that may be provided in NXP data sheets and/or specifications can and do vary in different applications, and actual performance may vary over time. All operating parameters, including “typicals,” must be validated for each customer application by customer’s technical experts. NXP does not convey any license under its patent rights nor the rights of others. NXP sells products pursuant to standard terms and conditions of sale, which can be found at the following address: nxp.com/SalesTermsandConditions. NXP and the NXP logo are trademarks of NXP B.V. All other product or service names are the property of their respective owners. E 2018–2019 NXP B.V. ## **MRF300AN MRF300BN** **==> picture [112 x 37] intentionally omitted <==** RF Device Data NXP Semiconductors Document Number: MRF300AN 42Rev. 2, 06/2019
Updated at April 10, 2026
NXP Semiconductors is a global leader in secure connectivity solutions, driving innovation across the automotive, industrial, IoT, mobile, and communications infrastructure markets. By developing advanced, purpose-built technologies, NXP enables devices to sense, think, connect, and act intelligently, delivering rigorously tested components that make the connected world safer and more efficient. Within the semiconductor space, NXP is highly regarded for its extensive range of high-performance integrated circuits and discrete devices. The brand's portfolio excels in drivers and interfaces, featuring a comprehensive selection of I/O expanders designed to streamline complex system architectures. For demanding high-frequency and wireless applications, NXP provides industry-leading RF FETs and RF/PIN diodes engineered to deliver exceptional signal integrity, efficiency, and reliability. The NXP product lineup further extends to essential discrete components, including versatile bipolar transistors, JFETs, and small signal diodes optimized for precision switching and amplification. Additionally, the portfolio supports advanced automation and smart applications with precision IC sensors, such as MEMS accelerometers, alongside specialized power management solutions like AC/DC LED driver ICs and single MOSFETs for cutting-edge electronics design.
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