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MRF1K50NR5
RF FET Transistor, 133 V, 2.941 kW, 1.8 MHz, 500 MHz, OM-1230
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- Manufacturer: NXP
- Product type: RF FETs
- Drain Source Voltage Vds:133V; Continuous Drain Current Id:-; Power Dissipation Pd:2.941kW; Operating Frequency Min:500MHz; Operating Frequency Max:1.8MHz; RF Transistor Case:OM-12
- MSL: MSL 3 - 168 hours
- SVHC: No SVHC (27-Jun-2024)
- No. of Pins: 4Pins
- Channel Type: N Channel
- Product Range: MRF1K50N
- Power Dissipation: 2.941kW
- Transistor Mounting: Flange
- Transistor Case Style: OM-1230
- Operating Frequency Max: 500MHz
- Operating Frequency Min: 1.8MHz
- Drain Source Voltage Vds: 133V
- Operating Temperature Max: 150°C
- Continuous Drain Current Id: -
| Delivery and price | |
|---|---|
| Units per pack | 5 |
| Price | 248.67 € |
| Current stock | 25+ |
| Lead time | 30 days |
Datasheet
**NXP Semiconductors** Technical Data Document Number: MRF1K50N Rev. 0, 11/2016 ## **RF Power LDMOS Transistors** High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs These high ruggedness devices are designed for use in high VSWR industrial, scientific and medical applications, as well as radio and VHF TV broadcast, sub--GHz aerospace and mobile radio applications. Their unmatched input and output design allows for wide frequency range use from 1.8 to 500 MHz. ## **MRF1K50N MRF1K50GN** — **1.8–500 MHz, 1500 W CW, 50 V WIDEBAND RF POWER LDMOS TRANSISTORS** ## **Typical Performance:** VDD = 50 Vdc |**Frequency**<br>**(MHz)**|**Signal Type**|**Pout**<br>**(W)**|**Gps**<br>**(dB)**|η**D**<br>**(%)**| |---|---|---|---|---| |87.5--108 **(1,2)**|CW|1421 CW|23.1|83.2| |230 **(3,4)**|Pulse<br>(100μsec, 20% Duty Cycle)|1500 Peak|23.4|75.1| **Load Mismatch/Ruggedness** **Frequency Pin Test (MHz) Signal Type VSWR (W) Voltage Result** 230 **[(3)]** Pulse > 65:1 at all 15 Peak 50 No Device (100 μsec, 20% Phase Angles (3 dB Degradation Duty Cycle) Overdrive) ~~TT~~ 1. Data from 87.5–108 MHz broadband reference circuit (page 5). ~~TEE~~ 2. The values shown are the center band performance numbers across the indicated frequency range. 3. Data from 230 MHz narrowband production test fixture (page 11). 4. All data measured in fixture with device soldered to heatsink. ## **Features** - High drain--source avalanche energy absorption capability - Unmatched input and output allowing wide frequency range utilization - Device can be used single--ended or in a push--pull configuration - Characterized from 30 to 50 V for ease of use - Suitable for linear application - Integrated ESD protection with greater negative gate--source voltage range for improved Class C operation - Recommended driver: MRFE6VS25N (25 W) ## **Typical Applications** - Industrial, Scientific, Medical (ISM) **==> picture [154 x 292] intentionally omitted <==** **----- Start of picture text -----**<br> OM--1230--4L<br>PLASTIC<br>MRF1K50N<br>OM--1230G--4L<br>PLASTIC<br>MRF1K50GN<br>rd<br>Gate A 3 1 Drain A<br>a<br>Gate B 4 2 Drain B<br>i<br>(Top View)<br>Note: Exposed backside of the package is<br>the source terminal for the transistor.<br>Figure 1. Pin Connections<br>**----- End of picture text -----**<br> - Laser generation - Plasma etching - Particle accelerators - MRI and other medical applications - Industrial heating, welding and drying systems - Broadcast - Radio broadcast - VHF TV broadcast - Aerospace - VHF omnidirectional range (VOR) - HF and VHF communications - Weather radar - Mobile Radio - VHF and UHF base stations **MRF1K50N MRF1K50GN** © 2016 NXP B.V. RF Device Data NXP Semiconductors 1 ## **Table 1. Maximum Ratings** |**Table 1. Maximum Ratings**|**Table 1. Maximum Ratings**|**Table 1. Maximum Ratings**|||||| |---|---|---|---|---|---|---|---| |**Rating**|||**Symbol**||**Value**||**Unit**| |Drain--Source Voltage|||VDSS||–0.5, +133||Vdc| |Gate--Source Voltage|||VGS||–6.0, +10||Vdc| |Operating Voltage|||VDD||50||Vdc| |Storage Temperature Range|||Tstg||–65 to +150||°C| |Case Operating Temperature Range|||TC||–40 to +150||°C| |Operating Junction Temperature Range **(1,2)**|||TJ||–40 to +225||°C| |Total Device Dissipation @ TC= 25°C<br>Derate above 25°C|||PD||2941<br>14.71||W<br>W/°C| |**Table 2. Thermal Characteristics**|||||||| |**Characteristic**|||**Symbol**||**Value (2,3)**||**Unit**| |Thermal Resistance, Junction to Case<br>CW: Case Temperature 80°C, 1500 W CW, 50 Vdc, IDQ(A+B)= 200 mA, 98 MHz|||RθJC||0.068||°C/W| |Thermal Impedance, Junction to Case<br>Pulse: Case Temperature 75°C, 1500 W Peak, 100μsec Pulse Width, 20% Duty Cycle,<br>50 Vdc, IDQ(A+B)= 100 mA, 230 MHz|||ZθJC||0.015||°C/W| |**Table 3. ESD Protection Characteristics**|||||||| |**Test Methodology**|||||**Class**||| |Human Body Model (per JESD22--A114)|||2, passes 2500 V||||| |Charge Device Model (per JESD22--C101)|||C3, passes 2000 V||||| |**Table 4. Moisture Sensitivity Level**|||||||| |**Test Methodology**|**Rating**|**Package Peak Temperature**|||||**Unit**| |Per JESD22--A113, IPC/JEDEC J--STD--020|3|||260|||°C| |**Table 5. Electrical Characteristics** (TA= 25°C unless otherwise noted)|||||||| |**Characteristic**|**Symbol**|**Min**||**Typ**||**Max**|**Unit**| |**Off Characteristics (4)**|||||||| |Gate--Source Leakage Current<br>(VGS= 5 Vdc, VDS= 0 Vdc)|IGSS|—||—||1|μAdc| |Drain--Source Breakdown Voltage<br>(VGS= 0 Vdc, ID= 100 mAdc)|V(BR)DSS|133||—||—|Vdc| |Zero Gate Voltage Drain Leakage Current<br>(VDS= 50 Vdc, VGS= 0 Vdc)|IDSS|—||—||10|μAdc| |Zero Gate Voltage Drain Leakage Current<br>(VDS= 133 Vdc, VGS= 0 Vdc)|IDSS|—||—||100|mAdc| |**On Characteristics**|||||||| |Gate Threshold Voltage **(4)**<br>(VDS= 10 Vdc, ID= 2130μAdc)|VGS(th)|1.7||2.2||2.7|Vdc| |Gate Quiescent Voltage<br>(VDD= 50 Vdc, ID(A+B)= 100 mAdc, Measured in Functional Test)|VGS(Q)|1.9||2.4||2.9|Vdc| |Drain--Source On--Voltage **(4)**<br>(VGS= 10 Vdc, ID= 2.4 Adc)|VDS(on)|—||0.15||—|Vdc| |Forward Transconductance **(4)**<br>(VDS= 10 Vdc, ID= 36 Adc)|gfs|_—_||33.5||_—_|S| 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.nxp.com/RF/calculators. 3. Refer to AN1955, _Thermal Measurement Methodology of RF Power Amplifiers._ Go to http://www.nxp.com/RF and search for AN1955. 4. Each side of device measured separately. (continued) **MRF1K50N MRF1K50GN** RF Device Data NXP Semiconductors 2 **Table 5. Electrical Characteristics** (TA = 25°C unless otherwise noted) **(continued)** |**Characteristic**|**Characteristic**|**Characteristic**|**Characteristic**|**Characteristic**|**Symbol**|**Min**|**Min**|**Typ**|**Typ**|**Max**|**Unit**| |---|---|---|---|---|---|---|---|---|---|---|---| |**Dynamic Characteristics (1)**|||||||||||| |Reverse Transfer Capacitance<br>(VDS= 50 Vdc±30 mV(rms)ac @ 1 MHz, VGS= 0 Vdc)|||||Crss|—||5.77||—|pF| |Output Capacitance<br>(VDS= 50 Vdc±30 mV(rms)ac @ 1 MHz, VGS= 0 Vdc)|||||Coss|—||219||—|pF| |Input Capacitance<br>(VDS= 50 Vdc, VGS= 0 Vdc±30 mV(rms)ac @ 1 MHz)|||||Ciss|—||683||—|pF| |**Functional Tests (2,3)** (In NXP Production Test Fixture, 50 ohm system) VDD= 50 Vdc, IDQ(A+B)= 100<br>(300 W Avg.), f = 230 MHz, 100μsec Pulse Width, 20% Duty Cycle||||||||mA, Pout= 1500 W Peak|||| |Power Gain|||||Gps|21.5||23.0||25.0|dB| |Drain Efficiency|||||ηD|68.0||73.0||—|%| |Input Return Loss|||||IRL|—||–16||–9|dB| |**Table 6. Load**|**Mismatch/Ruggedness** (In NXP Production Test Fixture, 50 ohm system) IDQ(A+B)= 100 mA||||||||||| |**Frequency**<br>**(MHz)**|**Signal Type**||**VSWR**|**Pin**<br>**(W)**||**Test**|**Voltage, VDD**|||**Result**|| |230|Pulse<br>(100μsec, 20% Duty Cycle)||> 65:1 at all<br>Phase Angles|15 Peak<br>(3 dB Overdrive)|||50|||No Device Degradation|| |**Table 7. Ordering Information**|||||||||||| |**Device**|||**Tape and Reel Information**|||||||**Package**|| |MRF1K50NR5||R5 Suffix = 50 Units, 56 mm Tape Width, 13--inch Reel|||||OM--1230--4L||||| |MRF1K50GNR5|||||||OM--1230G--4L||||| 1. Each side of device measured separately. 2. Devices tested without thermal grease or solder under the transistor. 3. Measurements made with device in straight lead configuration before any lead forming operation is applied. Lead forming is used for gull wing (GN) parts. **MRF1K50N MRF1K50GN** RF Device Data NXP Semiconductors 3 ## **TYPICAL CHARACTERISTICS** **==> picture [496 x 251] intentionally omitted <==** **----- Start of picture text -----**<br> 10000 1.08<br>Measured with ±30 mV(rms)ac @ 1 MHz 500 mA IDQ(A+B) = 100 mA VDD = 50 Vdc<br>VGS = 0 Vdc 1.06<br>1000 Ciss 1.04<br>1.02 1500 mA<br>Coss 2000 mA<br>100 1<br>0.98<br>Crss<br>10 0.96<br>0.94<br>1 0.92<br>0 10 20 30 40 50 –50 –25 0 25 50 75 100<br>VDS, DRAIN--SOURCE VOLTAGE (VOLTS) TC, CASE TEMPERATURE (°C)<br>Note: Each side of device measured separately. IDQ (mA) Slope (mV/ ° C)<br>Figure 2. Capacitance versus Drain--Source Voltage 100 –2.76<br>500 –2.38<br>1500 –2.20<br>2000 –1.76<br>GS(Q)<br>NORMALIZED V<br>C, CAPACITANCE (pF)<br>**----- End of picture text -----**<br> **Figure 3. Normalized VGS versus Quiescent Current and Case Temperature** **==> picture [239 x 212] intentionally omitted <==** **----- Start of picture text -----**<br> 10 [8]<br>VDD = 50 Vdc<br>ID = 35.2 Amps<br>10 [7]<br>10 [6]<br>10 [5]<br>10 [4]<br>10 [3]<br>90 110 130 150 170 190 210 230 250<br>TJ, JUNCTION TEMPERATURE (°C)<br>Note: MTTF value represents the total cumulative operating time<br>under indicated test conditions.<br>MTTF calculator available at http:/www.nxp.com/RF/calculators.<br>MTTF (HOURS)<br>**----- End of picture text -----**<br> **Figure 4. MTTF versus Junction Temperature — CW** **MRF1K50N MRF1K50GN** RF Device Data NXP Semiconductors 4 ## **87.5–108 MHz BROADBAND REFERENCE CIRCUIT** **Table 8. 87.5–108 MHz Broadband Performance** (In NXP Reference Circuit, 50 ohm system) VDD = 50 Vdc, IDQ(A+B) = 200 mA, Pin = 7 W, CW |**Frequency**<br>**(MHz)**|**Gps**<br>**(dB)**|η**D**<br>**(%)**|**Pout**<br>**(W)**| |---|---|---|---| |87.5|22.5|81.7|1257| |98|23.1|83.2|1421| |108|22.8|79.1|1328| **MRF1K50N MRF1K50GN** RF Device Data NXP Semiconductors 5 ## **87.5–108 MHz BROADBAND REFERENCE CIRCUIT — 2.88** ″ × **5.12** ″ **(73 mm** × **130 mm)** **==> picture [370 x 334] intentionally omitted <==** **----- Start of picture text -----**<br> C6 C7 C25 C22 C26 C21 C27 L4<br>C28<br>C5<br>L1 R2 C20<br>C19<br>C4<br>C18<br>R1 C11 C17<br>C16<br>C3 Q1<br>C12 C24<br>C1<br>C2* L3 C23*<br>L2 C15*<br>R3<br>swedddddddd C8 C13 [C14*]<br>C9 C10 MRF1K50N<br>Rev. 0 D87696<br>*C2, C14, C15 and C23 are mounted vertically.<br>Note: Q1 leads are soldered to the PCB with L3 soldered directly on top of the drain leads.<br>0.26<br>(6.5)<br>0.63<br>(16.0)<br>0.26<br>(6.6)<br>Inches<br>L3 total wire length = 2.04″ (52 mm) (mm)<br>**----- End of picture text -----**<br> **Figure 5. MRF1K50N 87.5–108 MHz Broadband Reference Circuit Component Layout** **==> picture [370 x 209] intentionally omitted <==** **Figure 6. MRF1K50N 87.5–108 MHz Broadband Reference Circuit Component Layout — Bottom** **MRF1K50N MRF1K50GN** RF Device Data NXP Semiconductors 6 ## **87.5–108 MHz BROADBAND REFERENCE CIRCUIT** **Table 9. MRF1K50N Broadband Reference Circuit Component Designations and Values — 87.5–108 MHz** |**Part**|**Description**|**Part Number**|**Manufacturer**| |---|---|---|---| |C1, C3, C6, C9, C18, C19,<br>C20, C21, C22|1000 pF Chip Capacitors|ATC100B102JT50XT|ATC| |C2|33 pF Chip Capacitor|ATC100B330JT500XT|ATC| |C4, C5, C8|10,000 pF Chip Capacitors|ATC200B103KT50XT|ATC| |C7, C10, C15, C16, C17, C23|470 pF Chip Capacitors|ATC100B471JT200XT|ATC| |C11|91 pF, 300 V Mica Capacitor|MIN02-002EC910J-F|CDE| |C12|56 pF, 300 V Mica Capacitor|MIN02-002DC560J-F|CDE| |C13|2.2 pF Chip Capacitor|ATC100B2R2JT500XT|ATC| |C14, C24|12 pF Chip Capacitors|ATC100B120GT500XT|ATC| |C25, C26, C27|220μF, 100 V Electrolytic Capacitors|EEV-FK1A221M|Panasonic| |C28|22μF, 35 V Electrolytic Capacitor|UUD1V220MCL1GS|Nichicon| |L1, L2|17.5 nH Inductors, 6 Turns|B06TJLC|Coilcraft| |L3|1.5 mm Non--Tarnish Silver Plated Copper Wire|SP1500NT-001|Scientific Wire Company| |L4|22 nH Inductor|1212VS-22NMEB|Coilcraft| |Q1|RF Power LDMOS Transistor|MRF1K50N|NXP| |R1|10Ω, 1/4 W Chip Resistor|CRCW120610R0JNEA|Vishay| |R2, R3|33Ω, 2 W Chip Resistors|1-2176070-3|TE Connectivity| |PCB|Arlon TC350 0.030″,εr= 3.5|D87696|MTL| Note: Refer to MRF1K50N’s printed circuit boards and schematics to download the 87.5–108 MHz heatsink drawing. **MRF1K50N MRF1K50GN** RF Device Data NXP Semiconductors 7 ## **TYPICAL CHARACTERISTICS — 87.5–108 MHz BROADBAND REFERENCE CIRCUIT** **==> picture [282 x 173] intentionally omitted <==** **----- Start of picture text -----**<br> 27 85<br>26 83<br>ηD<br>25 81<br>24 79<br>23 77<br>Gps<br>22 1600<br>21 1500<br>Pout<br>20 1400<br>19 1300<br>VDD = 50 Vdc, Pin = 7 W, lDQ(A+B) = 200 mA<br>18 1200<br>87 89 91 93 95 97 99 101 103 105 107 109<br>f, FREQUENCY (MHz)<br>, DRAIN<br>D<br>η<br>EFFICIENCY (%)<br>, POWER GAIN (dB)<br>ps<br>G<br>, OUTPUT<br>out<br>P<br>POWER (WATTS)<br>**----- End of picture text -----**<br> **Figure 7. Power Gain, Drain Efficiency and CW Output Power versus Frequency at a Constant Input Power** **==> picture [239 x 174] intentionally omitted <==** **----- Start of picture text -----**<br> 1600<br>98 MHz<br>1400<br>1200<br>87.5 MHz 108 MHz<br>1000<br>800<br>600<br>400<br>200 VDD = 50 Vdc, IDQ(A+B) = 200 mA<br>0<br>0 1 2 3 4 5 6 7 8 9<br>Pin, INPUT POWER (WATTS)<br>, OUTPUT POWER (WATTS) PEAK<br>out<br>P<br>**----- End of picture text -----**<br> **Figure 8. CW Output Power versus Input Power and Frequency** **==> picture [281 x 175] intentionally omitted <==** **----- Start of picture text -----**<br> 30 100<br>87.5 MHz<br>29 80<br>ηD<br>28 98 MHz 60<br>87.5 MHz 108 MHz<br>27 40<br>26 108 MHz 20<br>98 MHz<br>25 P out 1600<br>24 87.5 MHz 1200<br>23 98 MHz 800<br>22 108 MHz Gps 400<br>VDD = 50 Vdc, lDQ(A+B) = 200 mA<br>21 0<br>0 1 2 3 4 5 6 7 8 9<br>Pin, INPUT POWER (WATTS)<br>, DRAIN<br>D<br>η<br>EFFICIENCY (%)<br>, POWER GAIN (dB)<br>ps<br>G<br>, OUTPUT<br>out<br>P<br>POWER (WATTS)<br>**----- End of picture text -----**<br> **Figure 9. Power Gain, Drain Efficiency and CW Output Power versus Input Power and Frequency** **MRF1K50N MRF1K50GN** RF Device Data NXP Semiconductors 8 **==> picture [441 x 531] intentionally omitted <==** **----- Start of picture text -----**<br> 87.5–108 MHz BROADBAND REFERENCE CIRCUIT<br>ox one Ww + : 3 4 [7 Rs 6 ox<br>wre ai 2 (| LT ey wa<br>Ae) ee \ | a, We<br>EES FORTS<br>YEESSSA Z E o = 10 Ω LS<br>$ i, EO SSSR ETHEL ION<br>Ke Px SO xs x3 SAREE ce<br>Zsource<br>ESR SS See Saaere LTP<br>CRORE SSSR EE Te os<br>Tf REPRE f = 108 MHz f = 87.5 MHz S SS TL EE<br>TT PE LE SSS Se EE AS<br>GfVTA LERRELIER ERLE reir,ree SSSSORA TAN See OCs LTSee ee<br>f = 108 MHz<br>f [sf] RaSODA REITE f = 87.5 MHz POSSESSLER SS tly<br>H8/fF EB tehd) Ret TTRRE ZRRPOS SRSASS TELE:et<br>"Ee sHeitrsrieead Zload<br>Abfo Ege mane er ee<br>| TTT ee AT EEE<br>LORRI<br>cL. |§] BR SHa TE TEA poss manatee<br>le/ reais neeeieersrit ameeaene ee SEES a 9<br>T°] | EHR PEE TT HHA aU Sahat Hat a .<br>ap SieriiiriPEPPERS tii seesceeit i eee‘al tattelLEEfa} tH Lei Deere ee<br>1) Fa eee tes cocae e n peer Crees CS<br>EMM e<br>31) pssecatectecciiitcriameteencecectttQe Saas SS ONES<br>f Zsource Zload<br>MHz Ω Ω<br>87.5 4.07 + j5.13 3.92 + j2.89<br>98 3.93 + j4.84 3.39 + j2.35<br>108 3.50 + j4.72 2.83 + j2.56<br>Zsource = Test circuit impedance as measured from<br>gate to gate, balanced configuration.<br>Zload = Test circuit impedance as measured<br>from drain to drain, balanced configuration.<br>Input Device Output<br>Matching + Under -- Matching<br>Network Test Network<br>50 Ω 50 Ω<br>-- +<br>Zsource Zload<br>**----- End of picture text -----**<br> **Figure 10. Broadband Series Equivalent Source and Load Impedance — 87.5–108 MHz** **MRF1K50N MRF1K50GN** RF Device Data NXP Semiconductors 9 ## **HARMONIC MEASUREMENTS — 87.5–108 MHz BROADBAND REFERENCE CIRCUIT** **==> picture [419 x 224] intentionally omitted <==** **----- Start of picture text -----**<br> F1 87.5 MHz<br>Fundamental (F1)<br>H2 175 MHz –32 dB<br>H3 262.5 MHz –28 dB<br>H2 H3 H4<br>H4 350 MHz –44 dB<br>(175 MHz) (262.5 MHz) (350 MHz)<br>H3 –32 dB –28 dB –44 dB<br>H2<br>H4<br>Center: 228.5 MHz 35 MHz Span: 350 MHz<br>**----- End of picture text -----**<br> **Figure 11. 87.5 MHz Harmonics @ 1200 W CW** **MRF1K50N MRF1K50GN** RF Device Data NXP Semiconductors 10 ## **230 MHz NARROWBAND PRODUCTION TEST FIXTURE — 6.0** ″ × **4.0** ″ **(152 mm** × **102 mm)** **==> picture [444 x 297] intentionally omitted <==** **----- Start of picture text -----**<br> C10<br>C27 C28 C29<br>C6 C9 C12<br>D79536<br>C25<br>Coax1 Coax3<br>R1 L3<br>C18*<br>C2 L1 C19*<br>C4* C13 C14 [C15] C20*<br>C21*<br>C3 L2 C16 C17 C22*<br>C1 C23* C24<br>L4<br>R2<br>Coax2 Coax4<br>C26<br>MRF1K50N<br>C11 Rev. 0<br>C5 C7<br>C30 C31 C32<br>C8<br>CUT OUT AREA<br>**----- End of picture text -----**<br> **==> picture [224 x 9] intentionally omitted <==** **----- Start of picture text -----**<br> *C4, C18, C19, C20, C21, C22 and C23 are mounted vertically.<br>**----- End of picture text -----**<br> **Figure 12. MRF1K50N Narrowband Test Circuit Component Layout — 230 MHz** **Table 10. MRF1K50N Narrowband Test Circuit Component Designations and Values — 230 MHz** |**Part**|**Description**|**Part Number**|**Manufacturer**| |---|---|---|---| |C1, C2, C3|22 pF Chip Capacitors|ATC100B220JT500XT|ATC| |C4|27 pF Chip Capacitor|ATC100B270JT500XT|ATC| |C5, C6|22μF, 35 V Tantalum Capacitors|T491X226K035AT|Kemet| |C7, C9|0.1μF Chip Capacitors|CDR33BX104AKWS|AVX| |C8, C10|220 nF Chip Capacitors|C1812C224K5RACTU|Kemet| |C11, C12, C25, C26|1000 pF Chip Capacitors|ATC100B102JT50XT|ATC| |C13|51 pF Chip Capacitor|ATC100B510JT500XT|ATC| |C14|24 pF Chip Capacitor|ATC800R240JT500XT|ATC| |C15, C16, C17|20 pF Chip Capacitors|ATC800R200JT500XT|ATC| |C18, C19, C20, C21, C22, C23|240 pF Chip Capacitors|ATC100B241JT200XT|ATC| |C24|8.2 pF Chip Capacitor|ATC100B8R2CT500XT|ATC| |C27, C28, C29, C30, C31, C32|470μF, 63 V Electrolytic Capacitors|MCGPR63V477M13X26-RH|Multicomp| |Coax1, 2, 3, 4|25ΩSemi Rigid Coax Cables, 2.2″Shield<br>Length|UT-141C-25|Micro--Coax| |L1, L2|5 nH Inductors|A02TKLC|Coilcraft| |L3, L4|6.6 nH Inductors|GA3093-ALC|Coilcraft| |R1, R2|10Ω, 1/4 W Chip Resistors|CRCW120610R0JNEA|Vishay| |PCB|Arlon AD255A 0.030″,εr= 2.55|D79536|MTL| **MRF1K50N MRF1K50GN** RF Device Data NXP Semiconductors 11 ## **TYPICAL CHARACTERISTICS — 230 MHz PRODUCTION TEST FIXTURE** **==> picture [371 x 430] intentionally omitted <==** **----- Start of picture text -----**<br> 1800<br>VDD = 50 Vdc, f = 230 MHz<br>1600 Pulse Width = 100 μsec, 20% Duty Cycle<br>1400<br>1200<br>Pin = 6.5 W<br>1000<br>800<br>600<br>Pin = 3.2 W<br>400<br>200<br>0<br>0 0.5 1 1.5 2 2.5 3<br>VGS, GATE--SOURCE VOLTAGE (VOLTS)<br>Figure 13. Output Power versus Gate--Source<br>Voltage at a Constant Input Power<br>68 27<br>VDD = 50 Vdc, IDQ(A+B) = 100 mA, f = 230 MHz VDD = 50 Vdc, IDQ(A+B)DD = 50 Vdc, IDQ(A+B) = 50 Vdc, IDQ(A+B)DQ(A+B) = 100 mA, f = 230 MHz<br>64 Pulse Width = 100 μsec, 20% Duty Cycle Pulse Width = 100 μ μsec, 20% Duty Cycle<br>25<br>60<br>56 23 IDQ(A+B) = 900 mADQ(A+B) = 900 mA = 900 mA<br>600 mA<br>52<br>21<br>300 mA<br>48<br>100 mA<br>19<br>44<br>300 mA<br>100 mA<br>40 17<br>24 28 32 36 40 44 10 100<br>Pin, INPUT POWER (dBm) PEAK Poutout, OUTPUT POWER (WATTS) PEAK<br>f P1dB P3dB<br>(MHz) (W) (W)<br>230 1629 1857<br>, OUTPUT POWER (WATTS) PEAK<br>out<br>P<br>, POWER GAIN (dB)<br>ps<br>G<br>, OUTPUT POWER (dBm) PEAK<br>out<br>P<br>**----- End of picture text -----**<br> **==> picture [257 x 422] intentionally omitted <==** **----- Start of picture text -----**<br> 27 100<br>VDD = 50 Vdc, IDQ(A+B)DD = 50 Vdc, IDQ(A+B) = 50 Vdc, IDQ(A+B)DQ(A+B) = 100 mA, f = 230 MHz<br>Pulse Width = 100 μ μsec, 20% Duty Cycle<br>25 80<br>Gps<br>23 IDQ(A+B) = 900 mADQ(A+B) = 900 mA = 900 mA 60<br>600 mA ηD<br>21 40<br>300 mA<br>900 mA<br>100 mA<br>19 20<br>600 mA<br>300 mA<br>100 mA<br>17 0<br>10 100 1000 2000<br>Poutout, OUTPUT POWER (WATTS) PEAK<br>Figure 15. Power Gain and Drain Efficiency<br>versus Output Power and Quiescent Current<br>28<br>IDQ(A+B) = 100 mA, f = 230 MHz<br>26 Pulse Width = 100 μsec, 20% Duty Cycle<br>24<br>22<br>50 V<br>20 45 V<br>40 V<br>35 V<br>VDD = 30 V<br>18<br>16<br>0 200 400 600 800 1000 1200 1400 1600 1800 2000<br>Pout, OUTPUT POWER (WATTS) PEAK<br>, POWER GAIN (dB)<br>ps DRAIN EFFICIENCY (%)<br>G D,<br>η<br>, POWER GAIN (dB)<br>ps<br>G<br>**----- End of picture text -----**<br> **Figure 14. Output Power versus Input Power** **==> picture [258 x 174] intentionally omitted <==** **----- Start of picture text -----**<br> 29 90<br>VDD = 50 Vdc, IDQ(A+B) = 100 mA, f = 230 MHz<br>27 Pulse Width = 100 μsec, 20% Duty Cycle 80<br>25 70<br>23 Gps 60<br>21 TC = –40 _ C 50<br>19 25 _ C η D 40<br>17 85 _ C 30<br>15 85 _ C 20<br>13 –40 _ C 10<br>25 _ C<br>11 0<br>30 100 1000 2000<br>Pout, OUTPUT POWER (WATTS) PEAK<br>, POWER GAIN (dB)<br>ps DRAIN EFFICIENCY (%)<br>G D,<br>η<br>**----- End of picture text -----**<br> **Figure 17. Power Gain versus Output Power and Drain--Source Voltage** **Figure 16. Power Gain and Drain Efficiency versus Output Power** **MRF1K50N MRF1K50GN** RF Device Data NXP Semiconductors 12 ## **230 MHz NARROWBAND PRODUCTION TEST FIXTURE** **==> picture [308 x 171] intentionally omitted <==** **----- Start of picture text -----**<br> f Zsource Zload<br>MHz Ω Ω<br>230 1.0 + j2.0 1.7 + j0.9<br>Zsource = Test circuit impedance as measured from<br>gate to gate, balanced configuration.<br>Zload = Test circuit impedance as measured from<br>drain to drain, balanced configuration.<br>Input Device Output<br>Matching + Under -- Matching<br>50 Ω Network Test Network 50 Ω<br>-- +<br>Zsource Zload<br>**----- End of picture text -----**<br> **Figure 18. Narrowband Series Equivalent Source and Load Impedance — 230 MHz** **MRF1K50N MRF1K50GN** RF Device Data NXP Semiconductors 13 ## **PACKAGE DIMENSIONS** **MRF1K50N MRF1K50GN** RF Device Data NXP Semiconductors 14 **MRF1K50N MRF1K50GN** RF Device Data NXP Semiconductors 15 **==> picture [502 x 231] intentionally omitted <==** **MRF1K50N MRF1K50GN** RF Device Data NXP Semiconductors 16 **MRF1K50N MRF1K50GN** RF Device Data NXP Semiconductors 17 **==> picture [35 x 42] intentionally omitted <==** **MRF1K50N MRF1K50GN** RF Device Data NXP Semiconductors 18 **==> picture [502 x 235] intentionally omitted <==** **MRF1K50N MRF1K50GN** RF Device Data NXP Semiconductors 19 ## **PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS** Refer to the following resources to aid your design process. ## **Application Notes** - AN1907: Solder Reflow Attach Method for High Power RF Devices in Over--Molded Plastic Packages - AN1955: Thermal Measurement Methodology of RF Power Amplifiers ## **Engineering Bulletins** - EB212: Using Data Sheet Impedances for RF LDMOS Devices ## **Software** - Electromigration MTTF Calculator - RF High Power Model - .s2p File ## **Development Tools** - Printed Circuit Boards ## **To Download Resources Specific to a Given Part Number:** 1. Go to http://www.nxp.com/RF 2. Search by part number 3. Click part number link 4. Choose the desired resource from the drop down menu ## **REVISION HISTORY** The following table summarizes revisions to this document. |**Revision**|**Date**|**Description**| |---|---|---| |0|Nov. 2016|•<br>Initial Release of Data Sheet| **MRF1K50N MRF1K50GN** RF Device Data NXP Semiconductors 20 ## _**How to Reach Us:**_ **Home Page:** nxp.com **Web Support:** nxp.com/support Information in this document is provided solely to enable system and software implementers to use NXP products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits based on the information in this document. NXP reserves the right to make changes without further notice to any products herein. NXP makes no warranty, representation, or guarantee regarding the suitability of its products for any particular purpose, nor does NXP assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters that may be provided in NXP data sheets and/or specifications can and do vary in different applications, and actual performance may vary over time. All operating parameters, including “typicals,” must be validated for each customer application by customer’s technical experts. NXP does not convey any license under its patent rights nor the rights of others. NXP sells products pursuant to standard terms and conditions of sale, which can be found at the following address: nxp.com/SalesTermsandConditions. NXP, the NXP logo, Freescale, and the Freescale logo are trademarks of NXP B.V. All other product or service names are the property of their respective owners. E 2016 NXP B.V. **MRF1K50N MRF1K50GN** RF Device DataDocument Number: MRF1K50N NXP SemiconductorsRev. 0, 11/2016 21
Updated at April 10, 2026
NXP Semiconductors is a global leader in secure connectivity solutions, driving innovation across the automotive, industrial, IoT, mobile, and communications infrastructure markets. By developing advanced, purpose-built technologies, NXP enables devices to sense, think, connect, and act intelligently, delivering rigorously tested components that make the connected world safer and more efficient. Within the semiconductor space, NXP is highly regarded for its extensive range of high-performance integrated circuits and discrete devices. The brand's portfolio excels in drivers and interfaces, featuring a comprehensive selection of I/O expanders designed to streamline complex system architectures. For demanding high-frequency and wireless applications, NXP provides industry-leading RF FETs and RF/PIN diodes engineered to deliver exceptional signal integrity, efficiency, and reliability. The NXP product lineup further extends to essential discrete components, including versatile bipolar transistors, JFETs, and small signal diodes optimized for precision switching and amplification. Additionally, the portfolio supports advanced automation and smart applications with precision IC sensors, such as MEMS accelerometers, alongside specialized power management solutions like AC/DC LED driver ICs and single MOSFETs for cutting-edge electronics design.
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