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MRF13750HR5
RF FET Transistor, 105 V, 1.333 kW, 700 MHz, 1.3 GHz, NI-1230H-4S
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- Manufacturer: NXP
- Product type: RF FETs
- Drain Source Voltage Vds:105V; Continuous Drain Current Id:-; Power Dissipation Pd:1.333kW; Operating Frequency Min:700MHz; Operating Frequency Max:1.3GHz; RF Transistor Case:NI-1230H-
- MSL: MSL 3 - 168 hours
- SVHC: No SVHC (27-Jun-2024)
- No. of Pins: 4Pins
- Channel Type: N Channel
- Product Range: -
- Power Dissipation: 1.333kW
- Transistor Mounting: Flange
- Transistor Case Style: NI-1230H-4S
- Operating Frequency Max: 1.3GHz
- Operating Frequency Min: 700MHz
- Drain Source Voltage Vds: 105V
- Operating Temperature Max: 225°C
- Continuous Drain Current Id: -
| Delivery and price | |
|---|---|
| Units per pack | 50 |
| Price | 208.85 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
**NXP Semiconductors** Document Number: MRF13750H Technical Data Rev. 1, 01/2018 **RF Power LDMOS Transistors** N--Channel Enhancement--Mode Lateral MOSFETs **MRF13750H MRF13750HS** These 750 W CW transistors are designed for industrial, scientific and medical (ISM) applications in the 700 to 1300 MHz frequency range. The transistors are capable of CW or pulse power in narrowband operation. **Typical Performance:** VDD = 50 Vdc **700–1300 MHz, 750 W CW, 50 V Frequency Pout Gps** **D RF POWER LDMOS TRANSISTORS (MHz) Signal Type (W) (dB) (%)** 915 **[(1)]** CW 750 19.3 67.1 915 **[(2)]** Pulse 850 20.5 69.2 (100 sec, 10% Duty Cycle) 1300 **[(3)]** CW 700 17.2 56.0 **Load Mismatch/Ruggedness** ~~fo~~ **Frequency Pin Test** e **NI--1230H--4S (MHz) Signal Type VSWR (W) Voltage Result MRF13750H** 915 **[(2)]** Pulse > 10:1 at all 15.9 Peak 50 No Device (100 sec, 10% Phase (3 dB Degradation Duty Cycle) Angles Overdrive) 1. Measured in 915 MHz narrowband reference circuit (page 5). 2. Measured in 915 MHz narrowband production test fixture (page 11). 3. Measured in 1300 MHz narrowband reference circuit (page 8). **NI--1230S--4S** SS **Features MRF13750HS** ~~e~~ Internally input pre--matched for ease of use ~~S~~ Device can be used single--ended or in a push--pull configuration Characterized for 30 to 50 V - Suitable for linear applications with appropriate biasing - Integrated ESD protection - Recommended driver: MRFE6VS25GN (25 W) - Included in NXP product longevity program with assured supply for a minimum of 15 years after launch ## **Typical Applications** - 915 MHz industrial heating/welding systems - 1300 MHz particle accelerators **==> picture [130 x 87] intentionally omitted <==** **----- Start of picture text -----**<br> Gate A 3 1 Drain A<br>Gate B 4 2 Drain B<br>(Top View)<br>**----- End of picture text -----**<br> Note: The backside of the package is the source terminal for the transistor. **Figure 1. Pin Connections** **MRF13750H MRF13750HS** 2017–2018 NXP B.V. RF Device Data NXP Semiconductors 1 **Table 1. Maximum Ratings** |**Table 1. Maximum Ratings**|**Table 1. Maximum Ratings**||||||| |---|---|---|---|---|---|---|---| |**Rating**|||**Symbol**||**Value**||**Unit**| |Drain--Source Voltage|||VDSS||–0.5, +105||Vdc| |Gate--Source Voltage|||VGS||–6.0, +10||Vdc| |Operating Voltage|||VDD||55, +0||Vdc| |Storage Temperature Range|||Tstg||–65 to +150||C| |Case Operating Temperature Range|||TC||–40 to +150||C| |Operating Junction Temperature Range **(1,2)**|||TJ||–40 to +225||C| |Total Device Dissipation @ TC= 25C<br>Derate above 25C|||PD||1333<br>6.67||W<br>W/C| |**Table 2. Thermal Characteristics**|||||||| |**Characteristic**|||**Symbol**||**Value (2,3)**||**Unit**| |Thermal Resistance, Junction to Case<br>CW: Case Temperature 82C, 700 W CW, 50 Vdc, IDQ(A+B)= 150 mA, 915 MHz|||RJC||0.15||C/W| |Thermal Impedance, Junction to Case<br>Pulse: Case Temperature 76C, 850 W Peak, 100sec Pulse Width,<br>10% Duty Cycle, 50 Vdc, IDQ(A+B)= 200 mA, 915 MHz|||ZJC||0.014||C/W| |**Table 3. ESD Protection Characteristics**|||||||| |**Test Methodology**|||||**Class**||| |Human Body Model (per JESD22--A114)|||||2, passes 2500 V||| |Charge Device Model (per JESD22--C101)|||||C3, passes 1200 V||| |**Table 4. Electrical Characteristics** (TA= 25C unless otherwise noted)|||||||| |**Characteristic**|**Symbol**|**Min**||**Typ**||**Max**|**Unit**| |**Off Characteristics (4)**|||||||| |Gate--Source Leakage Current<br>(VGS= 5 Vdc, VDS= 0 Vdc)|IGSS|—||—||1|Adc| |Drain--Source Breakdown Voltage<br>(VGS= 0 Vdc, ID= 10A)|V(BR)DSS|105||—||—|Vdc| |Zero Gate Voltage Drain Leakage Current<br>(VDS= 55 Vdc, VGS= 0 Vdc)|IDSS|—||—||1|Adc| |Zero Gate Voltage Drain Leakage Current<br>(VDS= 105 Vdc, VGS= 0 Vdc)|IDSS|—||—||10|Adc| |**On Characteristics**|||||||| |Gate Threshold Voltage **(4)**<br>(VDS= 10 Vdc, ID= 275Adc)|VGS(th)|1.3||1.72||2.3|Vdc| |Gate Quiescent Voltage<br>(VDD= 50 Vdc, IDQ(A+B)= 200 mAdc, Measured in Functional Test)|VGS(Q)|1.7||2.2||2.7|Vdc| |Drain--Source On--Voltage **(4)**<br>(VGS= 10 Vdc, ID= 2.8 Adc)|VDS(on)|0.1||0.23||0.6|Vdc| |**Dynamic Characteristics (4,5)**|||||||| |Reverse Transfer Capacitance<br>(VDS= 50 Vdc30 mV(rms)ac @ 1 MHz, VGS= 0 Vdc)|Crss|—||1.94||—|pF| |Output Capacitance<br>(VDS= 50 Vdc30 mV(rms)ac @ 1 MHz, VGS= 0 Vdc)|Coss|—||63.8||—|pF| 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.nxp.com/RF/calculators. 3. Refer to AN1955, _Thermal Measurement Methodology of RF Power Amplifiers._ Go to http://www.nxp.com/RF and search for AN1955. 4. Each side of device measured separately. 5. Part internally input pre--matched. (continued) **MRF13750H MRF13750HS** RF Device Data NXP Semiconductors 2 **Table 4. Electrical Characteristics** (TA = 25C unless otherwise noted) **(continued)** |**Characteristic**|**Characteristic**|**Characteristic**|**Characteristic**|**Characteristic**|**Symbol**|**Min**|**Min**|**Typ**|**Typ**|**Max**|**Unit**| |---|---|---|---|---|---|---|---|---|---|---|---| |**Functional Tests**(In NXP Narrowband Production Test Fixture, 50 ohm system) VDD <br>(85 W Avg.), f = 915 MHz, 100sec Pulse Width, 10% Duty Cycle||||||= 50 Vdc, IDQ(A+B)= 200 mA, Pout= 850 W Peak|||||| |Power Gain|||||Gps|19.5||20.5||21.5|dB| |Drain Efficiency|||||D|66.0||69.2||—|%| |**Table 5. Load**|**Mismatch/Ruggedness** (In NXP Narrowband Production Test Fixture, 50 ohm system) IDQ(A+B)= 200 mA||||||||||| |**Frequency**<br>**(MHz)**|**Signal Type**||**VSWR**|**Pin**<br>**(W)**|||**Test Voltage, VDD**||**Result**||| |915|Pulse<br>(100sec, 10% Duty Cycle)||> 10:1 at all<br>Phase Angles|15.9 Peak<br>(3 dB Overdrive)|||50||No Device Degradation||| |**Table 6. Ordering Information**|||||||||||| |**Device**|||**Tape and Reel Information**||||||**Package**||| |MRF13750HR5||R5 Suffix =|50 Units, 56 mm Tape Width, 13--inch Reel|||||NI--1230H--4S|||| |MRF13750HSR5||||||||NI--1230S--4S|||| **MRF13750H MRF13750HS** RF Device Data NXP Semiconductors 3 ## **TYPICAL CHARACTERISTICS** **==> picture [376 x 510] intentionally omitted <==** **----- Start of picture text -----**<br> 1.08<br>ac @ 1 MHz IDQ(A+B) = 200 mA VDD = 50 Vdc<br>1.06<br>500 mA<br>1.04<br>1.02 750 mA<br>1000 mA<br>Cossoss 1<br>0.98<br>0.96<br>Crssrss 0.94<br>0.92<br>30 40 50 –50 –25 0 25 50 75 100<br>TC, CASE TEMPERATURE (C)<br>IDQ (mA) Slope (mV/ C)<br>200 –2.168<br>500 –1.992<br>750 –1.903<br>1000 –1.854<br>Figure 3. Normalized VGS versus Quiescent<br>Current and Case Temperature<br>10 [8]<br>ID = 17.3 Amps VDD = 50 Vdc<br>10 [7]<br>10 [6] 22.3 Amps<br>10 [5] 26.2 Amps<br>10 [4]<br>90 110 130 150 170 190 210 230 250<br>TJ, JUNCTION TEMPERATURE (C)<br>Note: MTTF value represents the total cumulative operating time<br>under indicated test conditions.<br>MTTF calculator available at http:/www.nxp.com/RF/calculators.<br>GS(Q)<br>NORMALIZED V<br>MTTF (HOURS)<br>**----- End of picture text -----**<br> **==> picture [241 x 188] intentionally omitted <==** **----- Start of picture text -----**<br> 10000<br>Measured with 30 mV(rms)ac @ 1 MHz<br>VGS = 0 Vdc<br>1000<br>100 Cossoss<br>10<br>Crssrss<br>1<br>0 10 20 30 40 50<br>VDS, DRAIN--SOURCE VOLTAGE (VOLTS)<br>Note: Each side of device measured separately.<br>C, CAPACITANCE (pF)<br>**----- End of picture text -----**<br> **Figure 2. Capacitance versus Drain--Source Voltage** **Figure 4. MTTF versus Junction Temperature – CW** **MRF13750H MRF13750HS** RF Device Data NXP Semiconductors 4 ## **915 MHz NARROWBAND REFERENCE CIRCUIT – 3.0** **3.8** **(7.6 cm** **9.7 cm)** **Table 7. 915 MHz Narrowband Performance** (In NXP Reference Circuit, 50 ohm system) VDD = 50 Vdc, IDQ(A+B) = 150 mA, Pin = 8.8 W |**Frequency**<br>**(MHz)**|**Signal**<br>**Type**|**Pout**<br>**(W)**|**Gps**<br>**(dB)**|**D**<br>**(%)**| |---|---|---|---|---| |915|CW|750|19.3|67.1| **MRF13750H MRF13750HS** RF Device Data NXP Semiconductors 5 ## **915 MHz NARROWBAND REFERENCE CIRCUIT – 3.0** **3.8** **(7.6 cm** **9.7 cm)** **==> picture [385 x 306] intentionally omitted <==** **----- Start of picture text -----**<br> C13<br>C9 C11<br>C5 C7<br>R1<br>C2*<br>C1 R11 Q1 C3*<br>C4*<br>R2<br>D94455 Rev. 0<br>Q2 C14<br>C6 C8<br>C15 R7 R9<br>R8<br>R4<br>R3 R10<br>R5 R6 U1 C10 C12<br>**----- End of picture text -----**<br> *C2, C3 and C4 are mounted vertically. **Figure 5. MRF13750H Narrowband Reference Circuit Component Layout – 915 MHz** **Table 8. MRF13750H Narrowband Reference Circuit Component Designations and Values – 915 MHz** |**Part**|**Description**|**Part Number**|**Manufacturer**| |---|---|---|---| |C1, C2, C3, C4, C5, C6, C11, C12|47 pF Chip Capacitor|ATC100B470JT500XT|ATC| |C7, C8, C15|1F Chip Capacitor|GRM21BR71H105KA12L|Murata| |C9, C10|1000 pF Chip Capacitor|ATC100B102JT50XT|ATC| |C13, C14|470F, 100 V Electrolytic Capacitor|MCGPR100V477M16X32--RH|Multicomp| |Q1|RF Power LDMOS Transistor|MRF13750H|NXP| |Q2|NPN Bipolar Transistor|BC847ALT1G|ON Semiconductor| |R1, R2|101/4 W Chip Resistor|CRCW120610R0JNEA|Vishay| |R3|5 kMulti--turn Cermet Trimmer Potentiometer|3224W--1--502E|Bourns| |R4|20 k1/10 W Chip Resistor|RR1220P--203--B--T5|Susumu| |R5|4.7 k1/10 W Chip Resistor|RR1220P--472--D|Susumu| |R6, R8|1.2 k1/8 W Chip Resistor|CRCW08051K20FKEA|Vishay| |R7|101/8 W Chip Resistor|CRCW080510R0FKEA|Vishay| |R9|2.2 k1/8 W Chip Resistor|CRCW08052K20JNEA|Vishay| |R10|4.7 k1/2 W Chip Resistor|CRCW12104K70FKEA|Vishay| |R11|21/2 W Chip Resistor|ERJ--14YJ2R0U|Panasonic| |U1|Voltage Regulator 5 V, Micro8|LP2951ACDMR2G|ON Semiconductor| |PCB|Rogers TC600, 0.025”,r= 6.15|D94455|MTL| ## **MRF13750H MRF13750HS** RF Device Data NXP Semiconductors 6 ## **TYPICAL CHARACTERISTICS – 915 MHz NARROWBAND REFERENCE CIRCUIT** **==> picture [505 x 218] intentionally omitted <==** **----- Start of picture text -----**<br> 900 23 90<br>VDD = 50 Vdc, IDQ = 150 mA, f = 915 MHz VDD = 50 Vdc, IDQ = 150 mA, f = 915 MHz<br>800 22 80<br>700 Gps<br>21 70<br>600<br>20 60<br>500<br>19 50<br>400 D<br>18 40<br>300<br>200 17 30<br>100 16 20<br>0 15 10<br>0 2 4 6 8 10 12 14 16 0 100 200 300 400 500 600 700 800 900<br>Pin, INPUT POWER (WATTS) Pout, OUTPUT POWER (WATTS)<br>f P1dB P3dB Figure 7. Power Gain and Drain Efficiency<br>(MHz) (W) (W) versus CW Output Power<br>915 690 800<br>, POWER GAIN (dB)<br>ps DRAIN EFFICIENCY (%)<br>, OUTPUT POWER (WATTS) G D,<br>out <br>P<br>**----- End of picture text -----**<br> **Figure 6. CW Output Power versus Input Power** **==> picture [305 x 169] intentionally omitted <==** **----- Start of picture text -----**<br> f Zsource Zload<br>MHz <br>915 0.58 + j0.24 0.59 + j1.19<br>Zsource = Test circuit impedance as measured from<br>gate to ground.<br>Zload = Test circuit impedance as measured<br>from drain to ground.<br>Input Device Output<br>Matching Under Matching<br>Network Test Network<br>50 50 <br>Zsource Zload<br>**----- End of picture text -----**<br> **Figure 8. Narrowband Series Equivalent Source and Load Impedance – 915 MHz** **MRF13750H MRF13750HS** RF Device Data NXP Semiconductors 7 ## **1300 MHz NARROWBAND REFERENCE CIRCUIT – 3.0** **3.9** **(7.6 cm** **9.9 cm)** **Table 9. 1300 MHz Narrowband Performance** (In NXP Reference Circuit, 50 ohm system) VDD = 50 Vdc, IDQ(A+B) = 150 mA, Pin = 11 W |**Frequency**<br>**(MHz)**|**Signal**<br>**Type**|**Pout**<br>**(W)**|**Gps**<br>**(dB)**|**D**<br>**(%)**| |---|---|---|---|---| |1300|CW|700|17.2|56.0| **MRF13750H MRF13750HS** RF Device Data NXP Semiconductors 8 **1300 MHz NARROWBAND REFERENCE CIRCUIT – 3.0** **3.9** **(7.6 cm** **9.9 cm)** **==> picture [368 x 303] intentionally omitted <==** **----- Start of picture text -----**<br> C12 C8 C10<br>C6 C4<br>R1<br>C2<br>C1 Q1<br>R11 C3<br>R2<br>Rev. 0 D100209<br>Q2<br>C7 C5<br>R4 C14 R7<br>R9 C13 C9 C11<br>R8<br>R3 R10<br>R5 R6<br>U1<br>**----- End of picture text -----**<br> **Figure 9. MRF13750H Narrowband Reference Circuit Component Layout – 1300 MHz** **Table 10. MRF13750H Narrowband Reference Circuit Component Designations and Values – 1300 MHz** |**Part**|**Description**|**Part Number**|**Manufacturer**| |---|---|---|---| |C1, C4, C5, C10, C11|24 pF Chip Capacitor|ATC100B240JT500XT|ATC| |C2, C3|18 pF Chip Capacitor|ATC100B180JT500XT|ATC| |C6, C7, C14|1F Chip Capacitor|GRM21BR71H105KA12L|Murata| |C8, C9|1000 pF Chip Capacitor|ATC100B102JT50XT|ATC| |C12, C13|470F, 100 V Electrolytic Capacitor|MCGPR100V477M16X32-RH|Multicomp| |R1, R2|10, 1/4 W Chip Resistor|CRCW120610R0JNEA|Vishay| |R3|5 kMulti--turn Cermet Trimmer Potentiometer|<br>3224W-1-502E|Bourns| |R4|20 k, 1/8 W Chip Resistor|CRCW080520K0FKEA|Vishay| |R5|4.7 k, 1/8 W Chip Resistor|CRCW08054K70FKEA|Vishay| |R6, R8|1.2 k, 1/8 W Chip Resistor|CRCW08051K20FKEA|Vishay| |R7|10, 1/8 W Chip Resistor|CRCW080510R0FKEA|Vishay| |R9|2.2 k, 1/8 W Chip Resistor|CRCW08052K20JNEA|Vishay| |R10|4.7 k, 1/2 W Chip Resistor|CRCW12104K70FKEA|Vishay| |R11|3.3, 1/2 W Chip Resistor|ERJ-14YJ3R3U|Panasonic| |Q1|RF Power LDMOS Transistor|MRF13750H|NXP| |Q2|NPN Bipolar Transistor|BC847ALT1G|ON Semiconductor| |U1|Voltage Regulator 5 V, Micro8|LP2951ACDMR2G|ON Semiconductor| |PCB|Arlon TC350, 0.020,r = 3.5|D100209|MTL| **MRF13750H MRF13750HS** RF Device Data NXP Semiconductors 9 ## **TYPICAL CHARACTERISTICS – 1300 MHz NARROWBAND REFERENCE CIRCUIT** **==> picture [510 x 218] intentionally omitted <==** **----- Start of picture text -----**<br> 800 20 60<br>VDD = 50 Vdc, IDQ(A+B) = 150 mA, f = 1300 MHz<br>700 19.5 55<br>Gps<br>600 19 50<br>500 18.5 45<br>400 18 40<br>300 17.5 35<br>D<br>200 17 30<br>100 16.5 25<br>VDD = 50 Vdc, IDQ(A+B) = 150 mA, f = 1300 MHz<br>0 16 20<br>0 4 8 12 16 20 0 100 200 300 400 500 600 700 800<br>Pin, INPUT POWER (WATTS) Pout, OUTPUT POWER (WATTS)<br>f P1dB P3dB Figure 11. Power Gain and Drain Efficiency<br>(MHz) (W) (W) versus CW Output Power<br>1300 600 710<br>, POWER GAIN (dB)<br>ps DRAIN EFFICIENCY (%)<br>, OUTPUT POWER (WATTS) G D,<br>out <br>P<br>**----- End of picture text -----**<br> **Figure 10. CW Output Power versus Input Power** **==> picture [305 x 169] intentionally omitted <==** **----- Start of picture text -----**<br> f Zsource Zload<br>MHz <br>1300 0.64 + j1.92 0.39 + j0.92<br>Zsource = Test circuit impedance as measured from<br>gate to ground.<br>Zload = Test circuit impedance as measured<br>from drain to ground.<br>Input Device Output<br>Matching Under Matching<br>Network Test Network<br>50 50 <br>Zsource Zload<br>**----- End of picture text -----**<br> **Figure 12. Narrowband Series Equivalent Source and Load Impedance – 1300 MHz** **MRF13750H MRF13750HS** RF Device Data NXP Semiconductors 10 **915 MHz NARROWBAND PRODUCTION TEST FIXTURE – 4.0** **6.0** **(10.2 cm** **15.2 cm)** **==> picture [419 x 280] intentionally omitted <==** **----- Start of picture text -----**<br> C1 C24<br>C3<br>C5<br>C26 C28<br>B1<br>Rev. 0<br>C22<br>C7<br>D87851<br>Coax1 C12 L1 Coax3<br>R1<br>C16*<br>C9 C17*<br>C14* C15* C18*<br>C19*<br>C10 C11 C20*<br>C21*<br>R2<br>Coax2 C13 L2 Coax4<br>C8<br>C23<br>B2<br>C25<br>C2 C4 C6<br>C27 C29<br>CUT OUT AREA<br>**----- End of picture text -----**<br> *C14, C15, C16, C17, C18, C19, C20 and C21 are mounted vertically. **Figure 13. MRF13750H Narrowband Production Test Fixture Component Layout – 915 MHz** **Table 11. MRF13750H Narrowband Production Test Fixture Component Designations and Values – 915 MHz** |**Part**|**Description**|**Part Number**|**Manufacturer**| |---|---|---|---| |B1, B2|RF Bead, Short|2743019447|Fair--Rite| |C1, C2|22F, 35 V Tantalum Capacitor|T491X226K035AT|Kemet| |C3, C4|2.2F Chip Capacitor|C1825C225J5RAC|Kemet| |C5, C6|0.1F Chip Capacitor|CDR33BX104AKWS|AVX| |C7, C8, C22, C23|36 pF Chip Capacitor|ATC100B360JT500XT|ATC| |C9, C10|10 pF Chip Capacitor|ATC100B100JT500XT|ATC| |C11|13 pF Chip Capacitor|ATC100B130JT500XT|ATC| |C12, C13|12 pF Chip Capacitor|ATC100B120JT500XT|ATC| |C14, C15|7.5 pF Chip Capacitor|ATC100B7R5CT500XT|ATC| |C16, C17, C18, C19, C20, C21|36 pF Chip Capacitor|ATC100B360JT500XT|ATC| |C24, C25|0.01F Chip Capacitor|C1825C103K1GAC--TU|Kemet| |C26, C27, C28, C29|470F, 63 V Electrolytic Capacitor|MCGPR63V477M13X26--RH|Multicomp| |Coax1, 2, 3, 4|25, Semi Rigid Coax, 2.2Shield Length|UT--141C--25|Micro Coax| |L1, L2|5 nH Inductor|A02TKLC|Coilcraft| |R1, R2|10, 3/4 W Chip Resistor|CRCW201010R0FKEF|Vishay| |PCB|Arlon, AD255A, 0.03,r= 2.55|D87851|MTL| **MRF13750H MRF13750HS** RF Device Data NXP Semiconductors 11 ## **TYPICAL CHARACTERISTICS – 915 MHz, TC = 25** _ **C PRODUCTION TEST FIXTURE** **==> picture [359 x 634] intentionally omitted <==** **----- Start of picture text -----**<br> 1200<br>VDD = 50 Vdc, f = 915 MHz<br>Pulse Width = 100 msec, 10% Duty Cycle<br>1000<br>Pin = 8.8 W<br>800<br>600<br>Pin = 4.4 W<br>400<br>200<br>0<br>0 0.5 1 1.5 2 2.5 3<br>VGS, GATE--SOURCE VOLTAGE (VOLTS)<br>Figure 14. Output Power versus Gate--Source<br>Voltage at a Constant Input Power<br>62 24<br>VDD = 50 Vdc, IDQ(A+B) = 200 mA, f = 915 MHz VDDDD = 50 Vdc, f = 915 MHz<br>60 Pulse Width = 100 msec, 10% Duty Cycle 23 Pulse Width = 100 sec, 10% Duty Cycle<br>58 22 IDQ(A+B) = 1000 mADQ(A+B) = 1000 mA = 1000 mA<br>800 mA<br>56 21<br>54 20<br>52 19<br>50 18 200 mA<br>48 17<br>46 16 200 mA<br>44 15<br>26 28 30 32 34 36 38 40 42 44 30<br>Pin, INPUT POWER (dBm) Poutout, OUTPUT POWER (WATTS) PEAK<br>f P1dB P3dB<br>(MHz) (W) (W)<br>915 802 912<br>Figure 15. Output Power versus Input Power<br>24 90 24<br>VDD = 50 Vdc, IDQ(A+B) = 200 mA, f = 915 MHz 23 IDQ(A+B)DQ(A+B) = 200 mA, f = 915 MHz<br>23 Pulse Width = 100 sec, 10% Duty Cycle 80 Pulse Width = 100 sec, 10% Duty Cycle<br>22<br>22 70<br>21<br>21 60 20<br>Gps<br>20 T C = –40 _ C 50 19<br>18<br>19 40 17<br>25 _ C D<br>18 30 16<br>17 85 _ C –40 _ C 20 15<br>25 _ C 14<br>16 85 _ C 10 13 V DD<br>15 0 12<br>20 100 1000 0 200<br>Pout, OUTPUT POWER (WATTS) PEAK Poutout, OUTPUT POWER (WATTS) PEAK<br>, OUTPUT POWER (WATTS) PEAK<br>out<br>P<br>, POWER GAIN (dB)<br>ps<br>G<br>, OUTPUT POWER (dBm) PEAK<br>out<br>P<br>, POWER GAIN (dB) , POWER GAIN (dB)<br>Gps DRAIN EFFICIENCY (%)D, Gpsps<br><br>**----- End of picture text -----**<br> **==> picture [258 x 421] intentionally omitted <==** **----- Start of picture text -----**<br> 24 90<br>VDDDD = 50 Vdc, f = 915 MHz<br>23 Pulse Width = 100 sec, 10% Duty Cycle Gps 80<br>22 IDQ(A+B) = 1000 mADQ(A+B) = 1000 mA = 1000 mA 70<br>800 mA<br>21 60<br>D<br>20 50<br>600 mA<br>19 40<br>400 mA<br>1000 mA<br>18 200 mA 30<br>800 mA<br>17 600 mA 20<br>400 mA<br>16 200 mA 10<br>15 0<br>30 100 1000<br>Poutout, OUTPUT POWER (WATTS) PEAK<br>Figure 16. Power Gain and Drain Efficiency<br>versus Output Power and Quiescent Current<br>24<br>IDQ(A+B)DQ(A+B) = 200 mA, f = 915 MHz<br>23<br>Pulse Width = 100 sec, 10% Duty Cycle<br>22<br>21<br>20<br>19<br>18<br>17<br>50 V<br>16<br>45 V<br>15<br>40 V<br>14<br>35 V<br>13 V DD = 30 V<br>12<br>0 200 400 600 800 1000<br>Poutout, OUTPUT POWER (WATTS) PEAK<br>, POWER GAIN (dB)<br>ps DRAIN EFFICIENCY (%)<br>G D,<br><br>, POWER GAIN (dB)<br>Gpsps<br>**----- End of picture text -----**<br> **Figure 18. Power Gain versus Output Power and Drain--Source Voltage** **Figure 17. Power Gain and Drain Efficiency versus Output Power** **MRF13750H MRF13750HS** RF Device Data NXP Semiconductors 12 ## **915 MHz NARROWBAND PRODUCTION TEST FIXTURE** **==> picture [308 x 170] intentionally omitted <==** **----- Start of picture text -----**<br> f Zsource Zload<br>MHz <br>915 3.46 – j1.76 2.39 + j3.92<br>Zsource = Test fixture impedance as measured from<br>gate to gate, balanced configuration.<br>Zload = Test fixture impedance as measured from<br>drain to drain, balanced configuration.<br>Input Device Output<br>Matching + Under -- Matching<br>50 Network Test Network 50 <br>-- +<br>Zsource Zload<br>**----- End of picture text -----**<br> **Figure 19. Narrowband Series Equivalent Source and Load Impedance – 915 MHz** **MRF13750H MRF13750HS** RF Device Data NXP Semiconductors 13 ## **PACKAGE DIMENSIONS** **==> picture [114 x 43] intentionally omitted <==** **MRF13750H MRF13750HS** RF Device Data NXP Semiconductors 14 **==> picture [502 x 232] intentionally omitted <==** **MRF13750H MRF13750HS** RF Device Data NXP Semiconductors 15 **==> picture [505 x 60] intentionally omitted <==** **MRF13750H MRF13750HS** RF Device Data NXP Semiconductors 16 **MRF13750H MRF13750HS** RF Device Data NXP Semiconductors 17 ## **PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS** Refer to the following resources to aid your design process. ## **Application Notes** - AN1908: Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages - AN1955: Thermal Measurement Methodology of RF Power Amplifiers ## **Engineering Bulletins** - EB212: Using Data Sheet Impedances for RF LDMOS Devices ## **Software** - Electromigration MTTF Calculator - RF High Power Model - .s2p File ## **Development Tools** - Printed Circuit Boards ## **To Download Resources Specific to a Given Part Number:** 1. Go to http://www.nxp.com/RF 2. Search by part number 3. Click part number link 4. Choose the desired resource from the drop down menu ## **REVISION HISTORY** The following table summarizes revisions to this document. |**Revision**|**Date**|**Description**| |---|---|---| |0|Dec. 2017|<br>Initial release of data sheet| |1|Jan. 2018|<br>On Characteristics, VGS(Q): Min and Max values updated to reflect recent test results of the device, p. 2| **MRF13750H MRF13750HS** RF Device Data NXP Semiconductors 18 ## _**How to Reach Us:**_ **Home Page:** nxp.com **Web Support:** nxp.com/support Information in this document is provided solely to enable system and software implementers to use NXP products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits based on the information in this document. NXP reserves the right to make changes without further notice to any products herein. NXP makes no warranty, representation, or guarantee regarding the suitability of its products for any particular purpose, nor does NXP assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters that may be provided in NXP data sheets and/or specifications can and do vary in different applications, and actual performance may vary over time. All operating parameters, including “typicals,” must be validated for each customer application by customer’s technical experts. NXP does not convey any license under its patent rights nor the rights of others. NXP sells products pursuant to standard terms and conditions of sale, which can be found at the following address: nxp.com/SalesTermsandConditions. NXP and the NXP logo are trademarks of NXP B.V. All other product or service names are the property of their respective owners. E 2017–2018 NXP B.V. **MRF13750H MRF13750HS** RF Device DataDocument Number: MRF13750H NXP SemiconductorsRev. 1, 01/2018 19
Updated at April 10, 2026
NXP Semiconductors is a global leader in secure connectivity solutions, driving innovation across the automotive, industrial, IoT, mobile, and communications infrastructure markets. By developing advanced, purpose-built technologies, NXP enables devices to sense, think, connect, and act intelligently, delivering rigorously tested components that make the connected world safer and more efficient. Within the semiconductor space, NXP is highly regarded for its extensive range of high-performance integrated circuits and discrete devices. The brand's portfolio excels in drivers and interfaces, featuring a comprehensive selection of I/O expanders designed to streamline complex system architectures. For demanding high-frequency and wireless applications, NXP provides industry-leading RF FETs and RF/PIN diodes engineered to deliver exceptional signal integrity, efficiency, and reliability. The NXP product lineup further extends to essential discrete components, including versatile bipolar transistors, JFETs, and small signal diodes optimized for precision switching and amplification. Additionally, the portfolio supports advanced automation and smart applications with precision IC sensors, such as MEMS accelerometers, alongside specialized power management solutions like AC/DC LED driver ICs and single MOSFETs for cutting-edge electronics design.
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