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MRF101BN
RF FET Transistor, 133 V, 182 W, 1.8 MHz, 250 MHz, TO-220
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- Manufacturer: NXP
- Product type: RF FETs
- Drain Source Voltage Vds:133V; Continuous Drain Current Id:-; Power Dissipation Pd:182W; Operating Frequency Min:1.8MHz; Operating Frequency Max:250MHz; RF Transistor Case:TO-220; N
- MSL: -
- SVHC: No SVHC (27-Jun-2024)
- No. of Pins: 3Pins
- Channel Type: N Channel
- Product Range: MRF101AN; MRF101BN
- Power Dissipation: 182W
- Transistor Mounting: Through Hole
- Transistor Case Style: TO-220
- Operating Frequency Max: 250MHz
- Operating Frequency Min: 1.8MHz
- Drain Source Voltage Vds: 133V
- Operating Temperature Max: 175°C
- Continuous Drain Current Id: -
| Delivery and price | |
|---|---|
| Units per pack | 50 |
| Price | 50.73 € |
| Current stock | 200+ |
| Lead time | 30 days |
Datasheet
**NXP Semiconductors** Technical Data Document Number: MRF101AN Rev. 0, 11/2018 ## **RF Power LDMOS Transistors** High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs These devices are designed for use in VHF/UHF communications, VHF TV broadcast and aerospace applications as well as industrial, scientific and medical applications. The devices are exceptionally rugged and exhibit high performance up to 250 MHz. ## **Typical Performance:** VDD = 50 Vdc |**Frequency**<br>**(MHz)**|**Signal Type**|**Pout**<br>**(W)**|**Gps**<br>**(dB)**|**D**<br>**(%)**| |---|---|---|---|---| |13.56|CW|130 CW|27.1|79.6| |27|CW|130 CW|24.0|81.5| |40.68 **(1)**|CW|120 CW|23.8|81.5| |50|CW|115 CW|23.0|79.5| |81.36|CW|130 CW|23.2|80.8| |87.5–108|CW|110 CW|21.3|77.1| |136–174 **(2,3)**|CW|104 CW|21.2|76.5| |230 **(4)**|Pulse<br>(100sec, 20% Duty Cycle)|115 Peak|21.1|76.7| **Load Mismatch/Ruggedness Frequency Pin Test (MHz) Signal Type VSWR (W) Voltage Result** 40.68 CW > 65:1 at all 0.64 Peak 50 No Device Phase (3 dB Degradation Angles Overdrive) 230 Pulse > 65:1 at all 1.8 Peak 50 No Device (100 sec, 20% Phase (3 dB Degradation Duty Cycle) Angles Overdrive) 1. Measured in 40.68 MHz reference circuit (page 5). D 2. Measured in 136–174 MHz VHF broadband reference circuit (page 9). 3. The values shown are the center band performance numbers across the indicated frequency range. 4. Measured in 230 MHz fixture (page 13). **Features** G Mirror pinout versions (A and B) to simplify use in a push--pull, ~~ae~~ two--up configuration Characterized from 30 to 50 V S Suitable for linear application ## **MRF101AN MRF101BN** ## **1.8–250 MHz, 100 W CW, 50 V WIDEBAND RF POWER LDMOS TRANSISTORS** ee S GSD **TO--220--3L MRF101AN** S DSG **TO--220--3L MRF101BN Backside** Note: Exposed backside of the package and tab also serves as a source terminal for the transistor. ; - Integrated ESD protection with greater negative gate--source voltage range for improved Class C operation - Included in NXP product longevity program with assured supply for a minimum of 15 years after launch ## **Typical Applications** - Industrial, scientific, medical (ISM) - Laser generation - Plasma etching - Particle accelerators - Radio and VHF TV broadcast - HF and VHF communications - Switch mode power supplies - MRI and other medical applications - Industrial heating, welding and drying systems **MRF101AN MRF101BN** 2018 NXP B.V. RF Device Data NXP Semiconductors 1 **Table 1. Maximum Ratings** |**Table 1. Maximum Ratings**|**Table 1. Maximum Ratings**|**Table 1. Maximum Ratings**|||||| |---|---|---|---|---|---|---|---| |**Rating**|||**Symbol**||**Value**||**Unit**| |Drain--Source Voltage|||VDSS||–0.5, +133||Vdc| |Gate--Source Voltage|||VGS||–6.0, +10||Vdc| |Operating Voltage|||VDD||50||Vdc| |Storage Temperature Range|||Tstg||–65 to +150||C| |Case Operating Temperature Range|||TC||–40 to +150||C| |Operating Junction Temperature Range **(1,2)**|||TJ||–40 to +175||C| |Total Device Dissipation @ TC= 25C<br>Derate above 25C|||PD||182<br>0.91||W<br>W/C| |**Table 2. Thermal Characteristics**|||||||| |**Characteristic**|||**Symbol**||**Value (2,3)**||**Unit**| |Thermal Resistance, Junction to Case<br>CW: Case Temperature 77C, 150 W CW, 50 Vdc, IDQ= 100 mA, 40.68 MHz||||RJC|1.1||C/W| |Thermal Impedance, Junction to Case<br>Pulse: Case Temperature 73C, 113 W Peak, 100sec Pulse Width, 20% Duty Cycle,<br>50 Vdc, IDQ= 100 mA, 230 MHz||||ZJC|0.37||C/W| |**Table 3. ESD Protection Characteristics**|||||||| |**Test Methodology**|||||**Class**||| |Human Body Model (per JS--001--2017)||||1B, passes 1000 V|||| |Charge Device Model (per JS--002--2014)||||C3, passes 1200 V|||| |**Table 4. Electrical Characteristics** (TA= 25C unless otherwise noted)|||||||| |**Characteristic**|**Symbol**|**Min**||**Typ**||**Max**|**Unit**| |**Off Characteristics**|||||||| |Gate--Source Leakage Current<br>(VGS= 5 Vdc, VDS= 0 Vdc)|IGSS|—||—||1|Adc| |Drain--Source Breakdown Voltage<br>(VGS= 0 Vdc, ID= 50 mAdc)|V(BR)DSS|133||—||—|Vdc| |Zero Gate Voltage Drain Leakage Current<br>(VDS= 100 Vdc, VGS= 0 Vdc)|IDSS|—||—||10|Adc| |**On Characteristics**|||||||| |Gate Threshold Voltage<br>(VDS= 10 Vdc, ID= 290Adc)|VGS(th)|1.7||2.2||2.7|Vdc| |Gate Quiescent Voltage<br>(VDS= 50 Vdc, ID= 100 mAdc)|VGS(Q)|—||2.5||—|Vdc| |Drain--Source On--Voltage<br>(VGS= 10 Vdc, ID= 1 Adc)|VDS(on)|—||0.45||—|Vdc| |Forward Transconductance<br>(VDS= 10 Vdc, ID= 8.8 Adc)|gfs|_—_||7.1||_—_|S| 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.nxp.com/RF/calculators. 3. Refer to AN1955, _Thermal Measurement Methodology of RF Power Amplifiers._ Go to http://www.nxp.com/RF and search for AN1955. (continued) **MRF101AN MRF101BN** RF Device Data NXP Semiconductors 2 **Table 4. Electrical Characteristics** (TA = 25C unless otherwise noted) **(continued)** |**Characteristic**|**Characteristic**|**Characteristic**|**Characteristic**|**Characteristic**|**Symbol**|**Min**|**Typ**||**Max**|**Unit**| |---|---|---|---|---|---|---|---|---|---|---| |**Dynamic Characteristics**||||||||||| |Reverse Transfer Capacitance<br>(VDS= 50 Vdc30 mV(rms)ac @ 1 MHz, VGS= 0 Vdc)|||||Crss|—|0.96||—|pF| |Output Capacitance<br>(VDS= 50 Vdc30 mV(rms)ac @ 1 MHz, VGS= 0 Vdc)|||||Coss|—|43.4||—|pF| |Input Capacitance<br>(VDS= 50 Vdc, VGS= 0 Vdc30 mV(rms)ac @ 1 MHz)|||||Ciss|—|149||—|pF| |**Typical Performance — 230 MHz**(In NXP 230 MHz Fixture, 50 ohm system) VDD= 50 Vdc, IDQ= 100 mA, Pin=<br>100sec Pulse Width, 20% Duty Cycle||||||||0.9 W, f = 230||MHz,| |Common--Source Amplifier Output Power|||||Pout|—|115||—|W| |Power Gain|||||Gps|—|21.1||—|dB| |Drain Efficiency|||||D|—|76.7||—|%| |**Table 5. Load**|**Mismatch/Ruggedness** (In NXP 230 MHz Fixture, 50 ohm system) IDQ= 100 mA|||||||||| |**Frequency**<br>**(MHz)**|**Signal Type**||**VSWR**|**Pin**<br>**(W)**||**Test Voltage, VDD**|||**Result**|| |230|Pulse<br>(100sec, 20% Duty Cycle)||> 65:1 at all<br>Phase Angles|1.8 Peak<br>(3 dB Overdrive)||50|||No Device Degradation|| |**Table 6. Ordering Information**||||||||||| |**Device**|||**Shipping Information**||||||**Package**|| |MRF101AN||MPQ = 250 devices (50 devices per tube, 5 tubes per box)|||||TO--220--3L (Pin 1: Gate,<br>Pin 2: Source, Pin 3: Drain)|||| |MRF101BN|||||||TO--220--3L (Pin 1: Drain,<br>Pin 2: Source, Pin 3: Gate)|||| **MRF101AN MRF101BN** RF Device Data NXP Semiconductors 3 ## **TYPICAL CHARACTERISTICS** **==> picture [240 x 172] intentionally omitted <==** **----- Start of picture text -----**<br> 1000<br>Measured with 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc<br>Ciss<br>100<br>C oss<br>10<br>Crss<br>1<br>0.1<br>0 10 20 30 40 50<br>VDS, DRAIN--SOURCE VOLTAGE (VOLTS)<br>C, CAPACITANCE (pF)<br>**----- End of picture text -----**<br> **Figure 1. Capacitance versus Drain--Source Voltage** **MRF101AN MRF101BN** RF Device Data NXP Semiconductors 4 ## **40.68 MHz COMPACT REFERENCE CIRCUIT (MRF101AN) — 0.7** **2.0** **(1.8 cm** **5.0 cm)** **Table 7. 40.68 MHz Performance** (In NXP Reference Circuit, 50 ohm system) VDD = 50 Vdc, IDQ = 100 mA, Pin = 0.50 W, CW |**Frequency**<br>**(MHz)**|**Pout**<br>**(W)**|**Gps**<br>**(dB)**|**D**<br>**(%)**| |---|---|---|---| |40.68|120|23.8|81.5| **MRF101AN MRF101BN** RF Device Data NXP Semiconductors 5 ## **40.68 MHz COMPACT REFERENCE CIRCUIT (MRF101AN) — 0.7** **2.0** **(1.8 cm** **5.0 cm)** |**Figure 2. MRF101AN Compact Reference Circuit Component Layout and Assembly Example**<br>C4<br>L4<br>L2<br>C5 C6<br>C8<br>C7<br>VDS<br>VGS<br>B1<br>L3<br>L1<br>C9<br>C10<br>C14<br>C13<br>C1<br>C2<br>R1<br>C12<br>C11<br>C3<br>_aaa--0_<br>D113958<br>Q1<br>**Figure 3. MRF101AN Compact Reference Circuit Board**<br>_aaa--032274_<br>D113958<br>**Table 8. MRF101AN Compact Reference Circuit Component Designations and Values — 40.68 MHz**|**Figure 2. MRF101AN Compact Reference Circuit Component Layout and Assembly Example**<br>C4<br>L4<br>L2<br>C5 C6<br>C8<br>C7<br>VDS<br>VGS<br>B1<br>L3<br>L1<br>C9<br>C10<br>C14<br>C13<br>C1<br>C2<br>R1<br>C12<br>C11<br>C3<br>_aaa--0_<br>D113958<br>Q1<br>**Figure 3. MRF101AN Compact Reference Circuit Board**<br>_aaa--032274_<br>D113958<br>**Table 8. MRF101AN Compact Reference Circuit Component Designations and Values — 40.68 MHz**|**Figure 2. MRF101AN Compact Reference Circuit Component Layout and Assembly Example**<br>C4<br>L4<br>L2<br>C5 C6<br>C8<br>C7<br>VDS<br>VGS<br>B1<br>L3<br>L1<br>C9<br>C10<br>C14<br>C13<br>C1<br>C2<br>R1<br>C12<br>C11<br>C3<br>_aaa--0_<br>D113958<br>Q1<br>**Figure 3. MRF101AN Compact Reference Circuit Board**<br>_aaa--032274_<br>D113958<br>**Table 8. MRF101AN Compact Reference Circuit Component Designations and Values — 40.68 MHz**|||||||| |---|---|---|---|---|---|---|---|---|---| ||||||||||| ||||C||||||| |||||||C7|||| ||||||||||_3227_| ||||||||||| ||||||||||| ||||||||||| |**Part**|**Description**|**Part Number**|||||||**Manufacturer**| |B1|Short RF Bead|2743019447|||||||Fair-Rite| |C1, C5|82 pF Chip Capacitor|GQM2195C2E820GB12D|||||||Murata| |C2, C4|200 pF Chip Capacitor|GQM2195C2A201GB12D|||||||Murata| |C3|33 pF Chip Capacitor|GQM2195C2E330GB12D|||||||Murata| |C6, C7, C8, C9, C10|1000 pF Chip Capacitor|GRM2165C2A102JA01D|||||||Murata| |C11|1F Chip Capacitor|GJ821BR71H105KA12L|||||||Murata| |C12, C13|10 nF Chip Capacitor|GRM21BR72A103KA01B|||||||Murata| |C14|1F Chip Capacitor|C3216X7R2A105K160AA|||||||TDK| |L1|150 nH Chip Inductor|0805WL151JT|||||||ATC| |L2|17.5 nH, 4 Turn Inductor|GA3095-ACL|||||||Coilcraft| |L3|160 nH Square Air Core Inductor|2222SQ-161JEC|||||||Coilcraft| |L4|110 nH Square Air Core Inductor|2222SQ-111JEB|||||||Coilcraft| |Q1|RF Power LDMOS Transistor|MRF101AN|||||||NXP| |R1|75, 1/4 W Chip Resistor|SG73P2ATTD75R0F|||||||KOA Speer| |PCB|FR4 0.09,r= 4.8, 2 oz. Copper|D113958|||||||MTL| **MRF101AN MRF101BN** RF Device Data NXP Semiconductors 6 ## **TYPICAL CHARACTERISTICS — 40.68 MHz COMPACT REFERENCE CIRCUIT (MRF101AN)** **==> picture [487 x 218] intentionally omitted <==** **----- Start of picture text -----**<br> 140 140<br>VDD = 50 Vdc, f = 40.68 MHz VDD = 50 Vdc, IDQ = 100 mA, f = 40.68 MHz<br>120 120<br>Pin = 0.5 W<br>100 100<br>Pin = 0.25 W<br>80 80<br>60 60<br>40 40<br>20 20<br>0 0<br>0 0.5 1 1.5 2 2.5 3 3.5 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7<br>VGS, GATE--SOURCE VOLTAGE (VOLTS) Pin, INPUT POWER (WATTS)<br>Figure 4. CW Output Power versus Gate--Source f P1dB P3dB<br>Voltage at a Constant Input Power (MHz) (W) (W)<br>40.68 101 121<br>, OUTPUT POWER (WATTS) , OUTPUT POWER (WATTS)<br>out out<br>P P<br>**----- End of picture text -----**<br> **Figure 5. CW Output Power versus Input Power** **==> picture [262 x 175] intentionally omitted <==** **----- Start of picture text -----**<br> 30 100<br>29 V DD = 50 Vdc, I DQ = 100 mA, f = 40.68 MHz 90<br>28 80<br>27 Gps 70<br>26 60<br>25 50<br>24 40<br>23 D 30<br>22 20<br>21 10<br>20 0<br>0 20 40 60 80 100 120 140<br>Pout, OUTPUT POWER (WATTS)<br>, POWER GAIN (dB)<br>ps DRAIN EFFICIENCY (%)<br>G D,<br><br>**----- End of picture text -----**<br> **Figure 6. Power Gain and Drain Efficiency versus CW Output Power** **MRF101AN MRF101BN** RF Device Data NXP Semiconductors 7 ## **40.68 MHz COMPACT REFERENCE CIRCUIT (MRF101AN)** **==> picture [308 x 170] intentionally omitted <==** **----- Start of picture text -----**<br> f Zsource Zload<br>MHz <br>40.68 24.0 + j12.6 14.2 – j2.5<br>Zsource = Test circuit impedance as measured from<br>gate to ground.<br>Zload = Test circuit impedance as measured from<br>drain to ground.<br>Input Device Output<br>Matching Under Matching<br>50 Network Test Network 50 <br>Zsource Zload<br>**----- End of picture text -----**<br> **Figure 7. Series Equivalent Source and Load Impedance — 40.68 MHz** **MRF101AN MRF101BN** RF Device Data NXP Semiconductors 8 ## **136–174 MHz COMPACT VHF BROADBAND REFERENCE CIRCUIT (MRF101AN) — 0.7** **2.0** **(1.8 cm** **5.0 cm)** **Table 9. 136–174 MHz VHF Broadband Performance** (In NXP Reference Circuit, 50 ohm system) VDD = 50 Vdc, IDQ = 100 mA, Pin = 0.79 W, CW |**Frequency**<br>**(MHz)**|**Pout**<br>**(W)**|**Gps**<br>**(dB)**|**D**<br>**(%)**| |---|---|---|---| |135|117|21.7|80.0| |155|104|21.2|76.5| |175|107|21.3|75.4| **MRF101AN MRF101BN** RF Device Data NXP Semiconductors 9 ## **136–174 MHz COMPACT VHF BROADBAND REFERENCE CIRCUIT (MRF101AN) — 0.7** **2.0** **(1.8 cm** **5.0 cm)** **==> picture [321 x 103] intentionally omitted <==** **----- Start of picture text -----**<br> C3<br>Q1 L3<br>L5<br>L6<br>C9 C8 C13<br>C6<br>C7 C14<br>R1<br>L2 C12 L4 B1 C4<br>C2 C5<br>C1 L1 VGS C11 VDS<br>D113958<br>**----- End of picture text -----**<br> **==> picture [325 x 9] intentionally omitted <==** **----- Start of picture text -----**<br> Note: Component number C10 is not used. aaa--032286<br>**----- End of picture text -----**<br> **Figure 8. MRF101AN Compact Reference Circuit Component Layout and Assembly Example — 136–174 MHz** **==> picture [99 x 40] intentionally omitted <==** **==> picture [79 x 84] intentionally omitted <==** **==> picture [65 x 102] intentionally omitted <==** **----- Start of picture text -----**<br> aaa--032285<br>D113958<br>**----- End of picture text -----**<br> **Figure 9. MRF101AN Compact Reference Circuit Board** **Table 10. MRF101AN Compact VHF Broadband Reference Circuit Component Designations and Values — 136–174 MHz** |**Part**|**Description**|**Part Number**|**Manufacturer**| |---|---|---|---| |B1|Short RF Bead|2743019447|Fair-Rite| |C1|39 pF Chip Capacitor|GQM2195C2E390GB12D|Murata| |C2, C5, C6, C7, C8, C12|510 pF Chip Capacitor|GRM2165C2A511JA01D|Murata| |C3|68 pF Chip Capacitor|GQM2195C2E680GB12D|Murata| |C4|27 pF Chip Capacitor|GQM2195C2E270GB12D|Murata| |C9|10 pF Chip Capacitor|GQM2195C2E100FB12D|Murata| |C11|1F Chip Capacitor|GJ821BR71H105KA12L|Murata| |C13|10 nF Chip Capacitor|GRM21BR72A103KA01B|Murata| |C14|1F Chip Capacitor|C3216X7R2A105K160AA|TDK| |L1|22 nH Chip Inductor|0805WL220JT|ATC| |L2|12 nH Chip Inductor|0805WL120JT|ATC| |L3, L4, L6|68 nH Air Core Inductor|1812SMS-68NJLC|Coilcraft| |L5|12 nH, 3 Turn Inductor|GA3094-ALC|Coilcraft| |Q1|RF Power LDMOS Transistor|MRF101AN|NXP| |R1|75, 1/4 W Chip Resistor|SG73P2ATTD75R0F|KOA Speer| |PCB|FR4 0.09r= 4.8, 2 oz. Copper|D113958|MTL| **MRF101AN MRF101BN** RF Device Data NXP Semiconductors 10 **TYPICAL CHARACTERISTICS — 136–174 MHz COMPACT VHF BROADBAND REFERENCE CIRCUIT (MRF101AN)** **==> picture [282 x 173] intentionally omitted <==** **----- Start of picture text -----**<br> 26 85<br>VDD = 50 Vdc, Pin = 0.79 W, lDQ = 100 mA<br>25 80<br>24 75<br>D<br>23 70<br>22 65<br>21 G ps 130<br>20 120<br>19 110<br>18 Pout 100<br>17 90<br>135 140 145 150 155 160 165 170 175<br>f, FREQUENCY (MHz)<br>, DRAIN<br>D<br><br>EFFICIENCY (%)<br>, POWER GAIN (dB)<br>ps<br>G<br>, OUTPUT<br>out<br>P<br>POWER (WATTS)<br>**----- End of picture text -----**<br> **Figure 10. Power Gain, Drain Efficiency and CW Output Power versus Frequency at a Constant Input Power** **==> picture [241 x 175] intentionally omitted <==** **----- Start of picture text -----**<br> 140<br>VDD = 50 Vdc, IDQ = 100 mA<br>f = 135 MHz<br>120<br>100<br>175 MHz<br>155 MHz<br>80<br>60<br>40<br>20<br>0<br>0 0.2 0.4 0.6 0.8 1.0<br>Pin, INPUT POWER (WATTS)<br>, OUTPUT POWER (WATTS)<br>out<br>P<br>**----- End of picture text -----**<br> **Figure 11. CW Output Power versus Input Power and Frequency** **==> picture [257 x 186] intentionally omitted <==** **----- Start of picture text -----**<br> 27 85<br>26 VDD = 50 Vdc, lDQ = 100 mA f = 155 MHz 80<br>25 Gps 135 MHz 75<br>24 70<br>175 MHz<br>23 65<br>22 60<br>21 D 55<br>135 MHz<br>20 155 MHz 50<br>19 175 MHz 45<br>18 40<br>17 35<br>20 40 60 80 100 120 140<br>Pout, OUTPUT POWER (WATTS)<br>, POWER GAIN (dB)<br>ps DRAIN EFFICIENCY (%)<br>G ,<br>D<br><br>**----- End of picture text -----**<br> **Figure 12. Power Gain and Drain Efficiency versus CW Output Power and Frequency** **MRF101AN MRF101BN** RF Device Data NXP Semiconductors 11 ## **136–174 MHz COMPACT VHF BROADBAND REFERENCE CIRCUIT (MRF101AN)** **==> picture [308 x 227] intentionally omitted <==** **----- Start of picture text -----**<br> f Zsource Zload<br>MHz <br>135 6.8 + j10.2 9.5 + j5.2<br>145 6.2 + j10.2 9.9 + j5.9<br>155 5.3 + j10.8 10.2 + j6.2<br>165 4.4 + j11.9 10.0 + j5.9<br>175 3.9 + j13.4 8.8 + j5.0<br>Zsource = Test circuit impedance as measured from<br>gate to ground.<br>Zload = Test circuit impedance as measured from<br>drain to ground.<br>Input Device Output<br>Matching Under Matching<br>50 Network Test Network 50 <br>Zsource Zload<br>**----- End of picture text -----**<br> **Figure 13. Series Equivalent Source and Load Impedance — 136–174 MHz** **MRF101AN MRF101BN** RF Device Data NXP Semiconductors 12 **230 MHz FIXTURE (MRF101AN) — 4.0** **5.0** **(10.2 cm** **12.7 cm)** **==> picture [377 x 262] intentionally omitted <==** **----- Start of picture text -----**<br> C13 C15<br>C7 C5 C14 C16 C17<br>C6 C4 B1 cut out<br>C8 area L2<br>R1<br>C1 C11 C12<br>L1<br>L3<br>C2<br>MRF101AN<br>C3<br>Rev. 0 C9 C10<br>D113651<br>**----- End of picture text -----**<br> **==> picture [35 x 5] intentionally omitted <==** **----- Start of picture text -----**<br> aaa--031939<br>**----- End of picture text -----**<br> **Figure 14. MRF101AN Fixture Component Layout — 230 MHz** **Table 11. MRF101AN Fixture Component Designations and Values — 230 MHz** |**Part**|**Description**|**Part Number**|**Manufacturer**| |---|---|---|---| |B1|Long Ferrite Bead|2743021447|Fair-Rite| |C1, C2, C10|18 pF Chip Capacitor|ATC100B180JT500XT|ATC| |C3|43 pF Chip Capacitor|ATC100B430JT500XT|ATC| |C4, C13|1000 pF Chip Capacitor|ATC800B102JT50XT|ATC| |C5|0.1F Chip Capacitor|GRM319R72A104KA01D|Murata| |C6|10 nF Chip Capacitor|C1210C103J5GACTU|Kemet| |C7|2.2F Chip Capacitor|C3225X7R1H225K|TDK| |C8|47F, 16 V Tantalum Capacitor|T491D476K016AT|Kemet| |C9|51 pF Chip Capacitor|ATC100B510JT500XT|ATC| |C11|16 pF Chip Capacitor|ATC100B160JT500XT|ATC| |C12|470 pF Chip Capacitor|ATC800B471JW50XT|ATC| |C14|0.1F Chip Capacitor|C1812104K1RACTU|Kemet| |C15|2.2F Chip Capacitor|C3225X7R2A225K|TDK| |C16|2.2F Chip Capacitor|HMK432B7225KM-T|Taiyo Yuden| |C17|220F, 100 V Electrolytic Capacitor|MCGPR100V227M16X26|Multicomp| |L1|39 nH Chip Inductor|1812SMS-39NJLC|Coilcraft| |L2|46 nH Chip Inductor|1010VS-46NME|Coilcraft| |L3|17.5 nH, 4 Turn Inductor|GA3095-ALC|Coilcraft| |R1|470, 1/4 W Chip Resistor|CRCW1206470RFKEA|Vishay| |PCB|Rogers AD255C, 0.030,r = 2.55, 2 oz. Copper|D113651|MTL| **MRF101AN MRF101BN** RF Device Data NXP Semiconductors 13 ## **TYPICAL CHARACTERISTICS — 230 MHz FIXTURE, TC = 25** _ **C (MRF101AN)** **==> picture [237 x 172] intentionally omitted <==** **----- Start of picture text -----**<br> 150<br>VDD = 50 Vdc, f = 230 MHz<br>Pulse Width = 100 sec, 20% Duty Cycle<br>125<br>100<br>Pin = 0.9 W<br>75<br>50<br>Pin = 0.45 W<br>25<br>0<br>0 0.5 1 1.5 2 2.5 3<br>VGS, GATE--SOURCE VOLTAGE (VOLTS)<br>, OUTPUT POWER (WATTS) PEAK<br>out<br>P<br>**----- End of picture text -----**<br> **Figure 15. Output Power versus Gate--Source Voltage at a Constant Input Power** **==> picture [510 x 447] intentionally omitted <==** **----- Start of picture text -----**<br> 53 24 100<br>VDD = 50 Vdc, IDQ = 100 mA, f = 230 MHz VDD = 50 Vdc, f = 230 MHz, Pulse Width = 100 sec, 20% Duty Cycle<br>51 Pulse Width = 100 sec, 20% Duty Cycle IDQ = 300 mA<br>22 200 mA 80<br>49 100 mA Gps<br>47 20 50 mA 60<br>45 D<br>300 mA<br>43 18 200 mA 40<br>41<br>100 mA<br>16 20<br>39 50 mA<br>37 14 0<br>15 18 21 24 27 30 33 3 30 300<br>Pin, INPUT POWER (dBm) PEAK Pout, OUTPUT POWER (WATTS) PEAK<br>f P1dB P3dB Figure 17. Power Gain and Drain Efficiency<br>(MHz) (W) (W) versus Output Power and Quiescent Current<br>230 110 128<br>Figure 16. Output Power versus Input Power<br>24 80 24<br>VDD = 50 Vdc, IDQ = 100 mA, f = 230 MHz IDQ = 100 mA, f = 230 MHz, Pulse Width = 100 sec, 20% Duty Cycle<br>23 Pulse Width = 100 sec, 20% Duty Cycle 70<br>Gps 22<br>22 60<br>20<br>21 50<br>D<br>20 40 18 50 V<br>45 V<br>19 30<br>40 V<br>16<br>18 20 35 V<br>VDD = 30 V<br>17 10 14<br>3 30 300 0 25 50 75 100 125 150<br>Pout, OUTPUT POWER (WATTS) PEAK Pout, OUTPUT POWER (WATTS) PEAK<br>Figure 18. Power Gain and Drain Efficiency Figure 19. Power Gain versus Output Power<br>versus Output Power and Drain--Source Voltage<br>, POWER GAIN (dB)<br>ps DRAIN EFFICIENCY (%)<br>G D,<br>, OUTPUT POWER (dBm) PEAK <br>out<br>P<br>, POWER GAIN (dB) , POWER GAIN (dB)<br>Gps DRAIN EFFICIENCY (%)D, Gps<br><br>**----- End of picture text -----**<br> **Figure 18. Power Gain and Drain Efficiency versus Output Power** **MRF101AN MRF101BN** RF Device Data NXP Semiconductors 14 ## **230 MHz FIXTURE (MRF101AN)** **==> picture [308 x 170] intentionally omitted <==** **----- Start of picture text -----**<br> f Zsource Zload<br>MHz <br>230 2.1 + j5.9 5.5 + j3.2<br>Zsource = Test circuit impedance as measured from<br>gate to ground.<br>Zload = Test circuit impedance as measured from<br>drain to ground.<br>Input Device Output<br>Matching Under Matching<br>50 Network Test Network 50 <br>Zsource Zload<br>**----- End of picture text -----**<br> **Figure 20. Series Equivalent Source and Load Impedance — 230 MHz** **MRF101AN MRF101BN** RF Device Data NXP Semiconductors 15 ## **PACKAGE DIMENSIONS** **MRF101AN MRF101BN** RF Device Data NXP Semiconductors 16 **==> picture [62 x 46] intentionally omitted <==** **MRF101AN MRF101BN** RF Device Data NXP Semiconductors 17 **MRF101AN MRF101BN** RF Device Data NXP Semiconductors 18 ## **PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS** Refer to the following resources to aid your design process. ## **Application Notes** - AN1955: Thermal Measurement Methodology of RF Power Amplifiers ## **Engineering Bulletins** - EB212: Using Data Sheet Impedances for RF LDMOS Devices ## **Software** - Electromigration MTTF Calculator - RF High Power Model - .s2p File ## **Development Tools** - Printed Circuit Boards ## **To Download Resources Specific to a Given Part Number:** 1. Go to http://www.nxp.com/RF 2. Search by part number 3. Click part number link 4. Choose the desired resource from the drop down menu ## **REVISION HISTORY** The following table summarizes revisions to this document. |**Revision**|**Date**|**Description**| |---|---|---| |0|Nov. 2018|<br>Initial release of data sheet| **MRF101AN MRF101BN** RF Device Data NXP Semiconductors 19 **==> picture [506 x 36] intentionally omitted <==** ## _**How to Reach Us:**_ **Home Page:** nxp.com **Web Support:** nxp.com/support Information in this document is provided solely to enable system and software implementers to use NXP products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits based on the information in this document. NXP reserves the right to make changes without further notice to any products herein. NXP makes no warranty, representation, or guarantee regarding the suitability of its products for any particular purpose, nor does NXP assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters that may be provided in NXP data sheets and/or specifications can and do vary in different applications, and actual performance may vary over time. All operating parameters, including “typicals,” must be validated for each customer application by customer’s technical experts. NXP does not convey any license under its patent rights nor the rights of others. NXP sells products pursuant to standard terms and conditions of sale, which can be found at the following address: nxp.com/SalesTermsandConditions. NXP and the NXP logo are trademarks of NXP B.V. All other product or service names are the property of their respective owners. E 2018 NXP B.V. ## **MRF101AN MRF101BN** **==> picture [112 x 37] intentionally omitted <==** RF Device Data NXP Semiconductors Document Number: MRF101AN 20Rev. 0, 11/2018
Updated at April 10, 2026
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