MRA4004T3G
Standard Recovery Diode, 400 V, 1 A, Single, 1.1 V, 30 A
- Manufacturer: ONSEMI
- Product type: Standard Recovery Rectifier Diodes
- Repetitive Reverse Voltage Vrrm Max:400V; Forward Current If(AV):1A; Diode Configuration:Single; Forward Voltage VF Max:1.1V; Reverse Recovery Time trr Max:-; Forward Surge Current If
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 2Pins
- Product Range: MRA40
- Qualification: -
- Diode Case Style: DO-214AC (SMA)
- Diode Configuration: Single
- Forward Voltage Max: 1.1V
- Forward Surge Current: 30A
- Reverse Recovery Time: -
- Average Forward Current: 1A
- Operating Temperature Max: 175°C
- Repetitive Peak Reverse Voltage: 400V
| Delivery and price | |
|---|---|
| Units per pack | 15000 |
| Price | 0.038 € |
| Current stock | 1000+ |
| Lead time | 30 days |
## MRA4003T3G Series, NRVA4003T3G Series ## Surface Mount Standard Recovery Power Rectifier **SMA Power Surface Mount Package** Features construction with glass passivation. Ideally suited for surface mounted automotive applications. ## **Features** - Compact Package with J−Bend Leads Ideal for Automated Handling - Stable, High Temperature, Glass Passivated Junction - NRVA Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable - These Devices are Pb−Free and are RoHS Compliant* ## **Mechanical Characteristics** - Case: Molded Epoxy Epoxy meets UL 94 V−0 @ 0.125 in - Weight: 70 mg (Approximately) - Finish: All External Surfaces are Corrosion Resistant and Terminal Leads are Readily Solderable - Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 seconds in Solder Bath - Polarity: Band in Plastic Body Indicates Cathode Lead - Marking: MRA4003T3G = R13 - MRA4004T3G = R14 MRA4005T1G = R15 MRA4005T3G = R15 MRA4006T3G = R16 MRA4007T3G = R17 NRVA4004T3G = R14 NRVA4005T3G = R15 NRVA4006T3G = R16 NRVA4007T3G = R17 **www.onsemi.com STANDARD RECOVERY RECTIFIERS 1.0 AMPERES 300−1000 VOLTS CASE 403D SMA MARKING DIAGRAM** R1x FAYWW ~~:~~ R1x = Specific Device Code - F = Wafer Source A = Assembly Location Y = Year WW = Work Week = Pb−Free Package (Note: Microdot may be in either location) ## **ORDERING INFORMATION** See detailed ordering and shipping information in the ordering information section on page 4 of this data sheet. - ESD Rating: - ♦ Human Body Model 3A - ♦ Machine Model C > *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Publication Order Number: **MRA4003T3/D** **1** © Semiconductor Components Industries, LLC, 2015 **September, 2015 − Rev. 10** **MRA4003T3G Series, NRVA4003T3G Series** ## **MAXIMUM RATINGS** |**Rating**|**Symbol**|**Value**|**Value**|**Value**|**Value**|**Value**|**Unit**| |---|---|---|---|---|---|---|---| |||**MRA4003**|**MRA4004/**<br>**NRVA4004**|**MRA4005/**<br>**NRVA4005**|**MRA4006/**<br>**NRVA4006**|**MRA4007/**<br>**NRVA4007**|| |Peak Repetitive Reverse Voltage<br>Working Peak Reverse Voltage<br>DC Blocking Voltage|VRRM<br>VRWM<br>VR|300|400|600|800|1000|Volts| |Avg. Rectified Forward Current<br>(At Rated VR, TL= 150°C)|IO|1|||||Amp| |Peak Repetitive Forward Current<br>(At Rated VR, Square Wave,<br>20 kHz, TL= 150°C)|IFRM|2|||||Amps| |Non−Repetitive Peak Surge Current<br>(Surge applied at rated load<br>conditions, halfwave, single phase,<br>60 Hz)|IFSM|30|||||Amps| |Junction Operating Temperature Range|TJ|−55 to 150|||||°C| |Storage Temperature Range|Tstg|−55 to 175|||||°C| Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ## **THERMAL CHARACTERISTICS** **==> picture [491 x 377] intentionally omitted <==** **----- Start of picture text -----**<br> Characteristic Symbol Value Unit<br>Thermal Resistance, Junction−to−Lead (Note 1) R θ JL 16.2 ° C/W<br>Thermal Resistance, Junction−to−Ambient (Note 2) R θ JA 88.3<br>ELECTRICAL CHARACTERISTICS<br>Value<br>Characteristic Symbol TJ = 25 ° C TJ = 100 ° C Unit<br>Maximum Instantaneous Forward Voltage (Note 3) VF Volts<br>(IF = 1 A) 1.1 1.04<br>(IF = 2 A) 1.18 1.12<br>Maximum Instantaneous Reverse Current (at rated DC voltage) IR 10 50 � A<br>1. Minimum Pad Size<br>2. 1 inch Pad Size<br>3. Pulse Test: Pulse Width ≤ 250 � s, Duty Cycle ≤ 2%.<br>10 100E−6<br>TJ = 150 ° C<br>TJ = 150 ° C 10E−6<br>1.0<br>1.0E−6<br>100 ° C<br>−40 ° C<br>100E−9<br>0.1 25 ° C<br>10E−9<br>100 ° C 25 ° C<br>0.01 1.0E−9<br>0.4 0.6 0.8 1.0 1.2 0 50 100 150 200 250 300 350 400<br>VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS)<br>IR, REVERSE CURRENT (AMPS)<br>IF, INSTANTANEOUS FORWARD CURRENT (AMPS)<br>**----- End of picture text -----**<br> **Figure 1. Typical Forward Voltage** **Figure 2. Typical Reverse Current** **www.onsemi.com** **2** **MRA4003T3G Series, NRVA4003T3G Series** **==> picture [491 x 177] intentionally omitted <==** **----- Start of picture text -----**<br> 2.0 1.8<br>dc<br>1.6<br>DC<br>1.4<br>1.5<br>Square Wave<br>1.2<br>Square Wave Ipk/IO = �<br>1.0<br>1.0 5<br>0.8<br>10<br>0.6<br>20<br>0.5<br>0.4<br>0.2<br>0 0<br>50 60 70 80 90 100 110 120 130 140 150 0 0.5 1.0 1.5 2.0<br>TL, LEAD TEMPERATURE ( ° C) IO, AVERAGE FORWARD CURRENT (AMPS)<br>, AVERAGE FORWARD CURRENT (A)<br>PFO, AVERAGE POWER DISSIPATION (WATTS)<br>IF(AV)<br>**----- End of picture text -----**<br> **Figure 3. Current Derating** **Figure 4. Forward Power Dissipation per Leg** **==> picture [239 x 168] intentionally omitted <==** **----- Start of picture text -----**<br> 100<br>TJ = 25 ° C<br>10<br>1<br>0 20 40 60 80 100 120 140 160 180 200<br>VR, REVERSE VOLTAGE (VOLTS)<br>C, CAPACITANCE (pF)<br>**----- End of picture text -----**<br> **Figure 5. Capacitance** **==> picture [491 x 174] intentionally omitted <==** **----- Start of picture text -----**<br> 1.0<br>R � JL (Min Pad Board)<br>R � JA (1 inch Pad Board)<br>0.1<br>0.01 R � JL(t) = R � JL * r(t)<br>0.001<br>10E−6 100E−6 1E−3 10E−3 100E−3 1E+0 10E+0 100E+0 1E+3 10E+3<br>t, TIME (s)<br>(NORMALIZED)<br>r(t), TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br> **Figure 6. Thermal Response** **www.onsemi.com** **3** **MRA4003T3G Series, NRVA4003T3G Series** ## **ORDERING INFORMATION** |**ORDERING INFORMATION**||| |---|---|---| |**Device**|**Package**|**Shipping**†| |MRA4003T3G|SMA<br>(Pb−Free)|5,000 / Tape & Reel| |MRA4004T3G||| |MRA4005T1G||1,500 / Tape & Reel| |MRA4005T3G||5,000 / Tape & Reel| |MRA4006T3G||| |MRA4007T3G||| |NRVA4004T3G*||| |NRVA4005T3G*||| |NRVA4006T3G*||| |NRVA4007T3G*||| †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *NRVA Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable. **www.onsemi.com** **4** **MRA4003T3G Series, NRVA4003T3G Series** ## **PACKAGE DIMENSIONS** **SMA** CASE 403D−02 ISSUE G **==> picture [355 x 393] intentionally omitted <==** **----- Start of picture text -----**<br> HE<br>NOTES:<br>1.<br>E 1982.<br>2.<br>3.<br>=<br>DIM MIN NOM<br>b D A 1.97 2.10<br>A1 0.05 0.10<br>b 1.27 1.45<br>c 0.15 0.28<br>Le POLARITY INDICATOR = == D 2.29 2.60<br>OPTIONAL AS NEEDED E 4.06 4.32<br>(SEE STYLES) H E 4.83 5.21<br>L 0.76 1.14<br>A<br>A1<br>=, L c Sn<br>SOLDERING FOOTPRINT*<br>4.0<br>0.157<br>2.0<br>0.0787<br>oy<br>oe<br>2.0<br>an<br>0.0787<br>SCALE 8:1 mm<br>(—) inches<br>*For additional information on our Pb−Free strategy and soldering<br>details, please download the ON Semiconductor Soldering and<br>Mounting Techniques Reference Manual, SOLDERRM/D.<br>**----- End of picture text -----**<br> **==> picture [172 x 19] intentionally omitted <==** **----- Start of picture text -----**<br> NOTES:<br>1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M,<br>1982.<br>**----- End of picture text -----**<br> **==> picture [195 x 90] intentionally omitted <==** **----- Start of picture text -----**<br> 2. CONTROLLING DIMENSION: INCH.<br>3. DIMENSION b SHALL BE MEASURED WITHIN DIMENSION L.<br>MILLIMETERS INCHES<br>DIM MIN NOM MAX MIN NOM MAX<br>A 1.97 2.10 2.20 0.078 0.083 0.087<br>A1 0.05 0.10 0.20 0.002 0.004 0.008<br>b 1.27 1.45 1.63 0.050 0.057 0.064<br>c 0.15 0.28 0.41 0.006 0.011 0.016<br>== D 2.29 SSSSE 2.60 2.92 0.090 0.103 0.115<br>E 4.06 4.32 4.57 0.160 0.170 0.180<br>H E 4.83 5.21 5.59 0.190 0.205 0.220<br>L 0.76 1.14 1.52 0.030 0.045 0.060<br>**----- End of picture text -----**<br> **==> picture [238 x 206] intentionally omitted <==** **----- Start of picture text -----**<br> A<br>A1<br>c<br>SOLDERING FOOTPRINT*<br>4.0<br>0.157<br>2.0<br>0.0787<br>oy<br>oe<br>2.0<br>an<br>0.0787<br>SCALE 8:1 mm<br>(—) inches<br>**----- End of picture text -----**<br> ON Semiconductor and the are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. ## **PUBLICATION ORDERING INFORMATION** ## **LITERATURE FULFILLMENT** : Literature Distribution Center for ON Semiconductor 19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA **Phone** : 303−675−2175 or 800−344−3860 Toll Free USA/Canada **Fax** : 303−675−2176 or 800−344−3867 Toll Free USA/Canada **Email** : orderlit@onsemi.com **N. American Technical Support** : 800−282−9855 Toll Free **ON Semiconductor Website** : **www.onsemi.com** USA/Canada **Europe, Middle East and Africa Technical Support: Order Literature** : http://www.onsemi.com/orderlit Phone: 421 33 790 2910 **Japan Customer Focus Center** For additional information, please contact your local Phone: 81−3−5817−1050 Sales Representative **www.onsemi.com** **MRA4003T3/D** **5**
Updated at April 22, 2026
onsemi is a premier global supplier of intelligent power and sensing technologies, driving disruptive innovations across the automotive, industrial, and cloud infrastructure markets. Recognized for their commitment to sustainability and reliable supply chains, the company accelerates advancements in vehicle electrification, industrial automation, and 5G networks by solving the industry's most complex design challenges. At the core of their portfolio is an industry-leading selection of discrete semiconductors. This extensive range features thousands of high-performance bipolar transistors, single and dual MOSFETs, and a comprehensive array of diodes, including Zener, Schottky, and fast-recovery rectifiers. Engineered for superior thermal performance and energy efficiency, these foundational components are critical for demanding power conversion, switching, and signal conditioning applications. Beyond essential discretes, onsemi provides a robust suite of advanced power management and circuit protection solutions. Their lineup includes intelligent power modules, single IGBTs, and transient voltage suppression (TVS) diodes designed to safeguard sensitive circuitry. Complimented by integrated passive filters, AC/DC LED driver ICs, and specialized sub-2.4GHz RF transceivers, onsemi equips engineers with the scalable, high-quality technologies needed to build a cleaner, smarter, and more connected world.
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