MPSA06..

Bipolar (BJT) Single Transistor, General Purpose, NPN, 80 V, 100 MHz, 625 mW, 500 mA, 100 hFE

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Manufacturer: ONSEMI
Product type: Single Bipolar Junction Transistors - BJT
Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:80V; Transition Frequency ft:100MHz; Power Dissipation Pd:625mW; DC Collector Current:500mA; DC Current Gain hFE:100hFE; Tran
MSL: MSL 1 - Unlimited
SVHC: No SVHC (25-Jun-2025)
No. of Pins: 3Pins
Product Range: -
Qualification: -
Power Dissipation: 625mW
Transistor Mounting: Through Hole
Transistor Polarity: NPN
Transition Frequency: 100MHz
Transistor Case Style: TO-92
DC Current Gain hFE Min: 100hFE
Operating Temperature Max: 150°C
Continuous Collector Current: 500mA
Collector Emitter Voltage Max: 80V

Delivery and price
Units per pack	5000
Price	0.062 €
Current stock	1000+
Lead time	7 days

Datasheet

Updated at March 24, 2026