Illustrative purposes only
MPSA05RA
Bipolar (BJT) Single Transistor, NPN, 60 V, 500 mA, 625 mW, TO-226AA, Through Hole
⚠️ Given the current worldwide supply chain situation, we kindly ask you to take the information shown as a guideline.
- Manufacturer: ONSEMI
- Product type: Single Bipolar Junction Transistors - BJT
- Product variants: No other variants available. No other names.
- No. of Pins: 3Pins
- Power Dissipation: 625mW
- DC Current Gain hFE: 100hFE
- Transistor Mounting: Through Hole
- Transistor Polarity: NPN
- DC Collector Current: 500mA
- Power Dissipation Pd: 625mW
- Transition Frequency: 100MHz
- Transistor Case Style: TO-226AA
- DC Current Gain hFE Min: 100hFE
- Operating Temperature Max: 150°C
- Continuous Collector Current: 500mA
- Collector Emitter Voltage Max: 60V
- Collector Emitter Voltage V(br)ceo: 60V
| Delivery and price | |
|---|---|
| Units per pack | 500 |
| Price | 0.169 € |
| Current stock | 2182 |
| Lead time | 7 days |