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MPIM650H217TG5 — IGBT Module, Half Bridge, 650 A, 1.85 V, 4.16 kW, 150 °C, Module
Illustrative purposes only

MPIM650H217TG5

IGBT Module, Half Bridge, 650 A, 1.85 V, 4.16 kW, 150 °C, Module

  • Manufacturer: MULTICOMP PRO
  • Product type: IGBT Modules
  • SVHC: To Be Advised
  • No. of Pins: 10Pins
  • Product Range: -
  • IGBT Technology: IGBT 5 [Trench]
  • IGBT Termination: Solder
  • Power Dissipation: 4.16kW
  • IGBT Configuration: Half Bridge
  • Transistor Mounting: Panel
  • Transistor Polarity: Dual N Channel
  • DC Collector Current: 650A
  • Power Dissipation Pd: 4.16kW
  • Transistor Case Style: Module
  • Operating Temperature Max: 150°C
  • Junction Temperature Tj Max: 150°C
  • Continuous Collector Current: 650A
  • Collector Emitter Voltage Max: 1.7kV
  • Collector Emitter Voltage V(br)ceo: 1.7kV
  • Collector Emitter Saturation Voltage: 1.85V
  • Collector Emitter Saturation Voltage Vce(on): 1.85V
Delivery and price
Units per pack 5
Price 265.02 €
Current stock 10+
Lead time 30 days

Updated at April 23, 2026