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MPIM1000H117TG5
IGBT Module, Half Bridge, 1 kA, 1.85 V, 6.25 kW, 150 °C, Module
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- Manufacturer: MULTICOMP PRO
- Product type: IGBT Modules
- SVHC: To Be Advised
- No. of Pins: 12Pins
- Product Range: -
- IGBT Technology: IGBT 5 [Trench]
- IGBT Termination: Solder
- Power Dissipation: 6.25kW
- IGBT Configuration: Half Bridge
- Transistor Mounting: Panel
- Transistor Polarity: Dual N Channel
- DC Collector Current: 1kA
- Power Dissipation Pd: 6.25kW
- Transistor Case Style: Module
- Operating Temperature Max: 150°C
- Junction Temperature Tj Max: 150°C
- Continuous Collector Current: 1kA
- Collector Emitter Voltage Max: 1.7kV
- Collector Emitter Voltage V(br)ceo: 1.7kV
- Collector Emitter Saturation Voltage: 1.85V
- Collector Emitter Saturation Voltage Vce(on): 1.85V
| Delivery and price | |
|---|---|
| Units per pack | 5 |
| Price | 314.39 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
## **Half Bridge IGBT Module** ## **Features** - Trench Gate, Generation 5, TMOS IGBT - Cu Base with Al2O3 Substrates - 10μs Short Circuit Withstand ## **Key Parameters** VCES : 1700 V VCE(sat) * (typ) : 1.85 A IC (max) : 1000 A IC(PK) (max) : 2000 V/μs ## **Applications** - Motor Drives - High Power Converters - Renewable Energy Power Conversion - High Reliability Inverters * Measured at the auxiliary terminals The MP005812 is a Half Bridge 1700V, trench gate, insulated gate bipolar transistor (IGBT) module with enhanced field stop and implantation technology. The IGBT has a wide reverse bias safe operating area (RBSOA) plus 10μs short circuit withstand. This device is optimised for traction drives and other applications requiring high thermal cycling capability. The module incorporates an electrically isolated base plate and low inductance construction enabling circuit designers to optimise circuit layouts and utilise grounded heat sinks for safety. ## **Absolute Maximum Ratings** Stresses above those listed under ‘Absolute Maximum Ratings’ may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability. Circuit configuration |**Symbol**|**Parameter**|**Test Conditions**|**Max.**|**Units**| |---|---|---|---|---| |VCES|Collector-emitter voltage|VGE = 0V, TC = 25°C|1700|V| |VGES|Gate-emitter voltage|TC = 25°C|±20|| |IC|Continuous collector current|TC = 104°C|1000|A| |IC(PK)|Peak collector current|tP = 1ms TC = 135°C|2000|| |Pmax|Max. transistorpower dissipation|TC = 25°C, Tvj= 150°C|6.25|kW| |I2t|Diode I2t value|VR = 0, tp= 10ms, Tvj= 150°C|145|kA2s| |Visol|Isolation voltage – per module|Commoned terminals to base plate.<br>AC RMS, 1 min, 50Hz|4000|V| Newark.com/multicomp-pro Farnell.com/multicomp-pro Element14.com/multicomp-pro 30/10/20 V1.0 Page <1> ## **Half Bridge IGBT Module** ## **Thermal And Mechanical Ratings** Internal insulation material: Al2O3 Baseplate material: Cu Creepage distance: 33mm Clearance: 19mm CTI (Comparative Tracking Index): >400 |**Symbol**|**Parameter**|**Test Conditions**|**Min.**|**Max.**|**Units**| |---|---|---|---|---|---| |Rth(j-c)|Thermal resistance – transistor|Continuous dissipation -<br>junction to case|-|20|°C/kW| |Rth(j-c)|Thermal resistance – diode|||36|| |Rth(c-h) IGBT|Thermal resistance –<br>case to heatsink(IGBT)|Mounting torque 5Nm<br>(with mounting grease: 1W/mK)|-|12|| |Rth(c-h)Diode|Thermal resistance –<br>case to heatsink(Diode)||||| |Tj|Junction temperature|Transistor|-40|150|°C| |||Diode|||| |Fstg|Storage temperature range|-|||| ||Screw torque|Mounting– M5|3|6|Nm| |||Electrical connections – M8|8|10|| Tcase = 25°C unless stated otherwise. |**Symbol**|**Parameter**|**Test Conditions**|**Min.**|**Typ**|**Max.**|**Units**| |---|---|---|---|---|---|---| |ICES|Collector cut-of current|VGE= 0V, VCE= VCES|||1|mA| |||VGE= 0V, VCE= VCES, TC= 125°C|||20|| |||VGE= 0V, VCE= VCES, TC= 150°C|||30|| |IGES|Gate leakage current|VGE= ± 20V, VCE= 0V|||0.5|μA| |VGE(TH)|Gate threshold voltage|IC= 30mA, VGE= VCE|5.2|5.8|6.4|V| |VCE(sat)|Collector-emitter saturation voltage|VGE= 15V, IC= 1000A||1.85|2.25|| |||VGE= 15V, IC= 1000A, Tj= 125°C||2.2|2.6|| |||VGE= 15V, IC= 1000A, Tj= 150°C||2.3|2.7|| |VF|Diode forward current|DC||1000||A| |VIFM|Diode maximum forward current|tp= 1ms||2000||| |VF|Diode forward voltage|IF= 1000A||1.8|2.2|V| |||IF= 1000A, Tj= 125°C||1.9|2.3|| |||IF= 1000A, Tj= 150°C||||| |Cies|Input capacitance|VCE= 25V, VGE= 0V, f = 100kHz||147||nF| |Qg|Gate charge|±15V||11.4||μC| |Qres|Reverse transfer capacitance|VCE= 25V, VGE= 0V, f = 100kHz||1.5||nF| |IM|Module inductance|||10||nH| |RINT|Internal transistor resistance|||0.2||mΩ| |SCData|Short circuit current, ISC|Tj= 150°C, VCC= 1000V<br>tp≤ 10μs, VGE≤ 15V<br>VCE (max)= VCES– L* x dI/dt<br>IEC 60747-9||4400||A| Newark.com/multicomp-pro Farnell.com/multicomp-pro Element14.com/multicomp-pro 30/10/20 V1.0 Page <2> ## **Half Bridge IGBT Module** ## **Note:** * L is the circuit inductance + LM ## **NTC-Thermistor Data** |**Symbol**|**Parameter**|**Test Conditions**|**Min.**|**Typ**|**Max.**|**Units**| |---|---|---|---|---|---|---| |R25|Rated Resistance|TC= 25°C||5||kΩ| |ΔR/R|Deviation of R100|TC= 100°C, R100= 493Ω|-5||5|%| |P25|Power Dissipation|TC= 25°C|||20|m/W| |B25/50|B-value|R2= R25exp [B25/50(1/T2 – 1/(298.15K))]||3375||K| |B25/80||R2= R25exp [B25/80(1/T2 – 1/(298.15K))]||3411||| |B25/100||R2= R25exp [B25/100(1/T2 – 1/(298.15K))]||3433||| ## **Electrical Characteristics** Tcase = 25°C unless stated otherwise. |**Symbol**|**Parameter**|**Test Conditions**|**Test Conditions**|**Min.**|**Typ**|**Max.**|**Units**| |---|---|---|---|---|---|---|---| |td(of)|Turn-of delaytime|IC= 1000A<br>VCE= 900V<br>VGE= ±15V<br>RG(OFF)= 1.8Ω<br>RG(ON)= 1.2Ω<br>LS~ 20nH|dv/dt = 3000V/μs||1320||ns| |tf|Fall time||||340||| |EOFF|Turn-of energyloss||||280||mJ| |td(on)|Turn-on delaytime||di/dt = 7200A/μs||500||ns| |tr|Rise time||||145||| |EON|Turn-on energyloss||||340||mJ| |Qrr|Diode reverse recoverycharge|IF= 1000A<br>VCE= 900V<br>di/dt = 7200A/μs|||285||μC| |Irr|Diode reverse recoverycurrent||||520||A| |Erec|Diode reverse recoveryenergy||||110||mJ| Tcase = 125°C unless stated otherwise. |**Symbol**|**Parameter**|**Test Conditions**|**Test Conditions**|**Min.**|**Typ**|**Max.**|**Units**| |---|---|---|---|---|---|---|---| |td(of)|Turn-of delaytime|IC= 1000A<br>VCE= 900V<br>VGE= ±15V<br>RG(OFF)= 1.8Ω<br>RG(ON)= 1.2Ω<br>LS~ 20nH|dv/dt = 3000V/μs||1410||ns| |tf|Fall time||||440||| |EOFF|Turn-of energyloss||||350||mJ| |td(on)|Turn-on delaytime||di/dt = 7200A/μs||470||ns| |tr|Rise time||||145||| |EON|Turn-on energyloss||||370||mJ| |Qrr|Diode reverse recoverycharge|IF= 1000A<br>VCE= 900V<br>di/dt = 7200A/μs|||315||μC| |Irr|Diode reverse recoverycurrent||||620||A| |Erec|Diode reverse recoveryenergy||||210||mJ| Newark.com/multicomp-pro Farnell.com/multicomp-pro Element14.com/multicomp-pro 30/10/20 V1.0 Page <3> ## **Half Bridge IGBT Module** Tcase = 125°C unless stated otherwise. |**Symbol**|**Parameter**|**Test Conditions**|**Test Conditions**|**Min.**|**Typ**|**Max.**|**Units**| |---|---|---|---|---|---|---|---| |td(off)|Turn-off delaytime|IC= 1000A<br>VCE= 900V<br>VGE= ±15V<br>RG(OFF)= 1.8Ω<br>RG(ON)= 1.2Ω<br>LS~ 20nH|dv/dt = 3000V/μs||1440||ns| |tf|Fall time||||570||| |EOFF|Turn-off energyloss||||360||mJ| |td(on)|Turn-on delaytime||di/dt = 7200A/μs||460||ns| |tr|Rise time||||140||| |EON|Turn-on energyloss||||385||mJ| |Qrr|Diode reverse recoverycharge|IF= 1000A<br>VCE= 900V<br>di/dt = 7200A/μs|||340||μC| |Irr|Diode reverse recoverycurrent||||655||A| |Erec|Diode reverse recoveryenergy||||235||mJ| Newark.com/multicomp-pro Farnell.com/multicomp-pro Element14.com/multicomp-pro 30/10/20 V1.0 Page <4> ## **Half Bridge IGBT Module** Newark.com/multicomp-pro Farnell.com/multicomp-pro Element14.com/multicomp-pro 30/10/20 V1.0 Page <5> ## **Half Bridge IGBT Module** Newark.com/multicomp-pro Farnell.com/multicomp-pro Element14.com/multicomp-pro 30/10/20 V1.0 Page <6> ## **Half Bridge IGBT Module** ## **Part Number Table** |**Part Number Table**|| |---|---| |**Description**|**Part Number**| |Half Bridge IGBT Module, 1700V, 1000A, H1 Case Code|MPIM1000H117TG5| **Important Notice :** This data sheet and its contents (the “Information”) belong to the members of the AVNET group of companies (the “Group”) or are licensed to it. No licence is granted for the use of it other than for information purposes in connection with the products to which it relates. No licence of any intellectual property rights is granted. The Information is subject to change without notice and replaces all data sheets previously supplied. The Information supplied is believed to be accurate but the Group assumes no responsibility for its accuracy or completeness, any error in or omission from it or for any use made of it. Users of this data sheet should check for themselves the Information and the suitability of the products for their purpose and not make any assumptions based on information included or omitted. Liability for loss or damage resulting from any reliance on the Information or use of it (including liability resulting from negligence or where the Group was aware of the possibility of such loss or damage arising) is excluded. This will not operate to limit or restrict the Group’s liability for death or personal injury resulting from its negligence. Multicomp Pro is the registered trademark of Premier Farnell Limited 2019. Newark.com/multicomp-pro Farnell.com/multicomp-pro Element14.com/multicomp-pro 30/10/20 V1.0 Page <7>
Updated at April 23, 2026
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