MMSD103T1G

## MMSD103T1G, SMMSD103T1G 

## High Voltage Switching Diode 

## **Features** 

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- AEC−Q101 Qualified and PPAP Capable 

- S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements 

- These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant* 

**SOD−123 CASE 425 STYLE 1** 

## **MAXIMUM RATINGS** 

**Rating Symbol Value Unit** Continuous Reverse Voltage VR 250 V Peak Forward Current IF 200 mA Peak Forward Surge Current ~~ae~~ IFM(surge) 625 mA **THERMAL CHARACTERISTICS Characteristic Symbol Value Unit** ~~es~~ Forward Power Dissipation, FR−5 Board PF (Note 1) @ TA = 25C 400 mW Derate above 25C 3.2 mW/C ~~ee a~~ Thermal Resistance, R JL C/W Junction−to−Case 174 ~~a~~ Thermal Resistance, R JA C/W Junction−to−Ambient 492 ~~>~~ Junction and Storage TJ, Tstg −55 to +150 C Temperature Range ~~a~~ 

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR−5 = 1.0 0.75 0.062 in. 

1 2 Cathode Anode **MARKING DIAGRAM** ~~ot~~ 

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1 JS M<br>JS = Device Code<br>M = Date Code<br>= Pb−Free Package<br>**----- End of picture text -----**<br>


(Note: Microdot may be in either location) 

**ORDERING INFORMATION** 

**Device Package Shipping**[†] MMSD103T1G SOD−123 3,000 / Tape & Reel (Pb−Free) SMMSD103T1G SOD−123 3,000 / Tape & Reel (Pb−Free) ~~+~~ †For information on tape and reel specifications, ~~—~~ including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 

> *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 

Publication Order Number: **MMSD103T1/D** 

**1** 

 Semiconductor Components Industries, LLC, 2011 **November, 2011 − Rev. 6** 

## **MMSD103T1G, SMMSD103T1G** 

## **ELECTRICAL CHARACTERISTICS** (TA = 25C unless otherwise noted) 

|**ELECTRICAL CHARACTERISTICS**(TA= 25C unless otherwise noted)|||||
|---|---|---|---|---|
|**Characteristic**|**Symbol**|**Min**|**Max**|**Unit**|
|**OFF CHARACTERISTICS**|||||
|Reverse Voltage Leakage Current<br>(VR= 200 V)<br>(VR= 200 V, TJ= 150C)|IR|−<br>−|1.0<br>100|�A|
|Reverse Breakdown Voltage<br>(IBR= 100�A)|V(BR)|250|−|V|
|Forward Voltage<br>(IF= 100 mA)<br>(IF= 200 mA)|VF|−<br>−|1000<br>1250|mV|
|Diode Capacitance<br>(VR= 0, f = 1.0 MHz)|CD|−|5.0|pF|
|Reverse Recovery Time<br>(IF= IR= 30 mA, RL= 100�)|trr|−|50|ns|



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820 �<br>IF<br>+10 V 2.0 k 0.1 �F tr t p t<br>100 �H IF 10% t rr t<br>0.1 �F<br>D.U.T. 90%<br>50 � OUTPUT 50 � INPUT IR(REC) = 3.0 mA<br>IR<br>PULSE SAMPLING VR OUTPUT PULSE<br>GENERATOR OSCILLOSCOPE INPUT SIGNAL<br>(IF = IR = 30 mA; MEASURED<br>at IR(REC) = 3.0 mA)<br>**----- End of picture text -----**<br>


Notes: 1. A 2.0 k � variable resistor adjusted for a Forward Current (IF) of 30 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 30 mA. Notes: 3. tp » trr 

**Figure 1. Recovery Time Equivalent Test Circuit** 

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**2** 

**MMSD103T1G, SMMSD103T1G** 

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1200 7000<br>1000 TA = −55C 25C 50006000 TA = 150C<br>4000<br>800 3000<br>150C<br>600 6<br>5<br>400 4<br>3<br>200 2 TA = 25C<br>1 TA = −55C<br>1 0<br>1 10 100 1000 1 2 5 10 20 50 100 200 300<br>FORWARD CURRENT (mA) REVERSE VOLTAGE (V)<br>Figure 2. Forward Voltage Figure 3. Reverse Leakage<br>0.75<br>0.7<br>0.65<br>0.6<br>0.55<br>0.5<br>0.45<br>0.4<br>0.35<br>0.3<br>0 1 2 3 4 5 6 7 8 9 10<br>VR, REVERSE VOLTAGE (V)<br>FORWARD VOLTAGE (mV) REVERSE CURRENT (nA)<br>, DIODE CAPACITANCE (pF)<br>d<br>C<br>**----- End of picture text -----**<br>


**Figure 4. Diode Capacitance** 

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**3** 

MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** 

**SOD−123** CASE 425−04 ISSUE G 

DATE 07 OCT 2009 

**SCALE 5:1** 

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D<br>A NOTES:<br>1. DIMENSIONING AND TOLERANCING PER ANSI<br>A1 Y14.5M, 1982.<br>2. CONTROLLING DIMENSION: INCH.<br>1<br>ÂÂÂÂ MILLIMETERS INCHES<br>DIM MIN NOM MAX MIN NOM MAX<br>ÂÂÂÂ A 0.94 1.17 1.35 0.037 0.046 0.053<br>A1 0.00 0.05 0.10 0.000 0.002 0.004<br>ren ÂÂÂÂ i oo b 0.51 0.61 0.71 0.020 0.024 0.028<br>HE E c --- --- 0.15 --- --- 0.006<br>D 1.40 1.60 1.80 0.055 0.063 0.071<br>E 2.54 2.69 2.84 0.100 0.106 0.112<br>HE 3.56 3.68 3.86 0.140 0.145 0.152<br>L 0.25 --- --- 0.010 --- ---<br>0° --- 10° 0° --- 10°<br>2<br>oO<br>GENERIC<br>b L MARKING DIAGRAM*<br>k e . C i<br>XXXM<br>1<br>SOLDERING FOOTPRINT*<br>0.91<br>0.036 XXX = Specific Device Code<br>ile M = Date Code<br>ÉÉÉ ÉÉÉ = Pb−Free Package<br>1.22 (Note: Microdot may be in either location)<br>ÉÉÉ ÉÉÉ 0.048<br>rT} [J t *This information is generic. Please refer to device data |<br>ÉÉÉ ÉÉÉ<br>2.36 sheet for actual part marking. Pb−Free indicator, “G” or<br>0.093 microdot “ ”, may or may not be present.<br>4.19<br>a! 0.165 STYLE 1:PIN 1. CATHODE |<br>2. ANODE<br>SCALE 10:1 mm<br>inches<br>**----- End of picture text -----**<br>


**GENERIC MARKING DIAGRAM*** XXXM 1 XXX = Specific Device Code M = Date Code = Pb−Free Package (Note: Microdot may be in either location) *This information is generic. Please refer to device data | sheet for actual part marking. Pb−Free indicator, “G” or microdot “ ”, may or may not be present. | 

*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 

Electronic versions are uncontrolled except when accessed directly from the Document Repository. **DOCUMENT NUMBER: 98ASB42927B** Printed  versions are uncontrolled  except when stamped  “CONTROLLED COPY” in red. **DESCRIPTION: SOD−123 PAGE 1 OF 1** ~~a~~ ON Semiconductor and          are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. 

Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed  versions are uncontrolled  except when stamped  “CONTROLLED COPY” in red. 

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