MMQA33VT1G
TVS Diode, MMQA3, Unidirectional, 25 V, 48.6 V, SC-74, 6 Pins
- Manufacturer: ONSEMI
- Product type: TVS Diodes
- Product Range:MMQA3 Series; TVS Polarity:Unidirectional; Reverse Stand-Off Voltage Vrwm:25V; Clamping Voltage Vc Max:48.6V; Diode Case Style:SC-74; No. of Pins:6Pins; Breakdown Voltage
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 6Pins
- TVS Polarity: Unidirectional
- Product Range: MMQA3
- Qualification: AEC-Q101
- Diode Mounting: Surface Mount
- Diode Case Style: SC-74
- Clamping Voltage Max: 48.6V
- Reverse Standoff Voltage: 25V
- Maximum Breakdown Voltage: 34.7V
- Minimum Breakdown Voltage: 31.4V
- Operating Temperature Max: 150°C
- Peak Pulse Power Dissipation: 150W
| Delivery and price | |
|---|---|
| Units per pack | 9000 |
| Price | 0.072 € |
| Current stock | 10+ |
| Lead time | 30 days |
## MMQA, SZMMQA Quad Common Anode Series ## ESD Protection Diode ## **SC−74 Quad Monolithic Common Anode** This quad monolithic silicon voltage suppressor is designed for applications requiring transient overvoltage protection capability. It is intended for use in voltage and ESD sensitive equipment such as computers, printers, business machines, communication systems, medical equipment, and other applications. Its quad junction common anode design protects four separate lines using only one package. These devices are ideal for situations where board space is at a premium. **www.onsemi.com** **SC−74 QUAD SURGE PROTECTION 24 WATTS PEAK POWER 5.6 −33 VOLTS** ## **Features** - SC−74 Package Allows Four Separate Unidirectional Configurations - Peak Power − Min. 24 W @ 1.0 ms (Unidirectional), per Figure 5 Waveform - Peak Power − Min. 150 W @ 20 s (Unidirectional), per Figure 6 Waveform - Maximum Clamping Voltage @ Peak Pulse Current **SC−74 CASE 318F STYLE 1** **PIN ASSIGNMENT** - Low Leakage < 2.0 A • ESD Rating of Class 3B (exceeding 16 kV) per the Human Body PIN 1. CATHODE 1 6 Model 2. ANODE 3. CATHODE • SZ Prefix for Automotive and Other Applications Requiring Unique 2 5 4. CATHODE Site and Control Change Requirements; AEC−Q101 Qualified and 5. ANODE 3 4 6. CATHODE PPAP Capable ~~=~~ • These Devices are Pb−Free and are RoHS Compliant* **MARKING DIAGRAM** xxxM ~~=~~ xxx = Specific Device Code M = Date Cade = Pb−Free Package (Note: Microdot may be in either location) ## **DEVICE MARKING & ORDERING INFORMATION** See specific marking and ordering information in the device marking and ordering information table on page 6 of this data sheet. > *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Publication Order Number: **MMQA/D** **1** © Semiconductor Components Industries, LLC, 2015 **October, 2017 − Rev. 12** ## **MMQA, SZMMQA Quad Common Anode Series** ## **THERMAL CHARACTERISTICS** (TA = 25 ° C Unless Otherwise Noted) |**THERMAL CHARACTERISTICS**(TA= 25°C Unless Otherwise Noted)|||| |---|---|---|---| |**Characteristic**|**Symbol**|**Value**|**Unit**| |Peak Power Dissipation @ 1.0 ms (Note 1)<br>@ TA≤25°C|Ppk|24|W| |Peak Power Dissipation @ 20�s (Note 2)<br>@ TA≤25°C|Ppk|150|W| |Total Power Dissipation on FR-5 Board (Note 3)<br>@ TA = 25°C|PD|225<br>1.8|MW<br>mW/°C| |Thermal Resistance from Junction−to−Ambient|R�JA|556|°C/W| |Total Power Dissipation on Alumina Substrate (Note 4)<br>@ TA = 25°C<br>Derate above 25°C|PD|300<br>2.4|MW<br>mW/°C| |Thermal Resistance from Junction−to−Ambient|R�JA|417|°C/W| |Junction and Storage Temperature Range|TJ, Tstg|−55 to+150|°C| |Lead Solder Temperature−Maximum (10 Second Duration)|TL|260|°C| 1. Non-repetitive current pulse per Figure 5 and derate above TA = 25 ° C per Figure 4. 2. Non-repetitive current pulse per Figure 6 and derate above TA = 25 ° C per Figure 4. 3. FR-5 = 1.0 x 0.75 x 0.62 in. 4. Alumina = 0.4 x 0.3 x 0.024 in., 99.5% alumina ## **ELECTRICAL CHARACTERISTICS** (TA = 25 ° C Unless Otherwise Noted) **UNIDIRECTIONAL** (Circuit tied to pins 1, 2, and 5; Pins 2, 3, and 5; Pins 2, 4, and 5; or Pins 2, 5, and 6) (VF = 0.9 V Max @ IF = 10 mA) |**Device**<br>(Note 5)|**Breakdown Voltage**|**Breakdown Voltage**|**Breakdown Voltage**|**Breakdown Voltage**|**Max**<br>**Reverse**<br>**Leakage**<br>**Current**|**Max**<br>**Reverse**<br>**Leakage**<br>**Current**|**Max Zener**<br>**Impedance**<br>(Note 7)|**Max**<br>**Reverse**<br>**Surge**<br>**Current**|**Max**<br>**Reverse**<br>**Voltage @**<br>**IRSM**<br>(Note 8)<br>**(Clamping**<br>**Voltage)**|**Maximum**<br>**Temperature**<br>**Coefficient**<br>**of VZ**|**Capacitance**<br>**@ 0 Volt**<br>**Bias, 1 MHz**|**Capacitance**<br>**@ 0 Volt**<br>**Bias, 1 MHz**| |---|---|---|---|---|---|---|---|---|---|---|---|---| |||**VZT**<br>(Note 6)<br>**(V)**||**@ IZT**|**IR**|**VR**|||||**(pF)**|| ||Min|Nom|Max|(mA)|(nA)|(V)|ZZT@ IZT<br>(�) (mA)|IRSM<br>(A)|VRSM<br>(V)|(mV/°C)|Min|Max| |MMQA5V6T1G|5.32|5.6|5.88|1.0|2000|3.0|400|3.0|8.0|1.26|−|−| |MMQA6V2T1G/T3G|5.89|6.2|6.51|1.0|700|4.0|300|2.66|9.0|10.6|−|−| |MMQA6V8T1G|6.46|6.8|7.14|1.0|500|4.3|300|2.45|9.8|10.9|100|250| |MMQA12VT1G|11.4|12|12.6|1.0|75|9.1|80|1.39|17.3|14|−|−| |MMQA13VT1G|12.4|13|13.7|1.0|75|9.8|80|1.29|18.6|15|−|−| |MMQA15VT1G|14.3|15|15.8|1.0|75|11|80|1.1|21.7|16|−|−| |MMQA18VT1G|17.1|18|18.9|1.0|75|14|80|0.923|26|19|−|−| |MMQA20VT1G/T3G|19|20|21|1.0|75|15|80|0.84|28.6|20.1|−|−| |MMQA22VT1G|20.9|22|23.1|1.0|75|17|80|0.758|31.7|22|−|−| |MMQA24VT1G|22.8|24|25.2|1.0|75|18|100|0.694|34.6|25|−|−| |MMQA27VT1G|25.7|27|28.4|1.0|75|21|125|0.615|39|28|−|−| |MMQA33VT1G|31.4|33|34.7|1.0|75|25|200|0.504|48.6|37|−|−| 5. Includes SZ-prefix devices where applicable. 6. VZ measured at pulse test current IT at an ambient temperature of 25 ° C. 7. ZZT is measured by dividing the AC voltage drop across the device by the AC current supplied. The specified limits are IZ(AC) = 0.1 IZ(DC), with AC frequency = 1 kHz. 8. Surge current waveform per Figure 5 and derate per Figure 4. **www.onsemi.com** **2** **MMQA, SZMMQA Quad Common Anode Series** ## **TYPICAL CHARACTERISTICS** **==> picture [487 x 173] intentionally omitted <==** **----- Start of picture text -----**<br> 300 10,000<br>250 BIASED AT 0 V<br>BIASED AT 1 V 1,000<br>200 BIASED AT 50%<br>OF VZ NOM<br>+150°C<br>150 100<br>+25°C<br>100<br>10 -40°C<br>50<br>0 0<br>5.6 6.8 12 20 27 33 5.6 6.8 20 27 33<br>VZ, NOMINAL ZENER VOLTAGE (V) VZ, NOMINAL ZENER VOLTAGE (V)<br>C, CAPACITANCE (pF) IR, LEAKAGE (nA)<br>**----- End of picture text -----**<br> **Figure 1. Typical Capacitance** **Figure 2. Typical Leakage Current** **==> picture [489 x 173] intentionally omitted <==** **----- Start of picture text -----**<br> 300 100<br>90<br>250<br>80<br>ALUMINA SUBSTRATE<br>70<br>200<br>60<br>150 50<br>40<br>100<br>30<br>FR‐5 BOARD<br>20<br>50<br>10<br>0 0 25 50 75 100 125 150 175 00 25 50 75 100 125 150 175 200<br>TA, AMBIENT TEMPERATURE (°C) TA, AMBIENT TEMPERATURE (°C)<br>C<br>°<br>OR CURRENT @ TA = 25<br>PD , POWER DISSIPATION (mW)<br>PEAK PULSE DERATING IN % OF PEAK POWER<br>**----- End of picture text -----**<br> **Figure 3. Steady State Power Derating Curve** **Figure 4. Pulse Derating Curve** **www.onsemi.com** **3** **MMQA, SZMMQA Quad Common Anode Series** ## **TYPICAL CHARACTERISTICS** **==> picture [489 x 395] intentionally omitted <==** **----- Start of picture text -----**<br> 100<br>PULSE WIDTH (tP) IS DEFINED tr PEAK VALUE IRSM @ 8 �s<br>AS THAT POINT WHERE THE 90<br>t r PEAK CURRENT DECAYS TO 50% 80 PULSE WIDTH (tP) IS DEFINED<br>100 PEAK VALUE�—�I RSM OF IRSM. AS THAT POINT WHERE THE<br>tr ≤ 10 �s 70 PEAK CURRENT DECAY = 8 �s<br>60<br>IRSM 50 HALF VALUE IRSM/2 @ 20 �s<br>HALF VALUE�—<br>2<br>40<br>50<br>30<br>tP<br>tP 20<br>10<br>0<br>00 1 2 3 4 0 20 40 60 80<br>t, TIME (ms)<br>t, TIME (�s)<br>Figure 5. 10 × 1000 � s Pulse Waveform Figure 6. 8 × 20 � s Pulse Waveform<br>100 200<br>RECTANGULAR<br>WAVEFORM, TA = 25 ° C 180<br>160<br>8 × 20 WAVEFORM AS PER FIGURE 6<br>140<br>120<br>10 100<br>80<br>UNIDIRECTIONAL<br>60 10 × 100 WAVEFORM AS PER FIGURE 5<br>40<br>20<br>1.0 0<br>0.1 1.0 10 100 1000 5.6 6.8 12 20 27 33<br>PW, PULSE WIDTH (ms) NOMINAL VZ<br>VALUE (%)<br>% OF PEAK PULSE CURRENT<br>, PEAK SURGE POWER (W)<br>Ppk PEAK SURGE POWER (W) PPK<br>**----- End of picture text -----**<br> **Figure 7. Maximum Non−Repetitive Surge Power, Ppk versus PW** **Figure 8. Typical Maximum Non−Repetitive Surge Power, Ppk versus VZ** Power is defined as VRSM x IZ(pk) where VRSM is the clamping voltage at IZ(pk). **www.onsemi.com** **4** **MMQA, SZMMQA Quad Common Anode Series** ## **TYPICAL COMMON ANODE APPLICATIONS** A quad junction common anode design in a SC-74 package protects four separate lines using only one package. This adds flexibility and creativity to PCB design especially when board space is at a premium. A simplified example of MMQA/SZMMQA Series Device applications is illustrated below. **==> picture [350 x 150] intentionally omitted <==** **----- Start of picture text -----**<br> A<br>KEYBOARD B<br>TERMINAL FUNCTIONAL<br>I/O C<br>PRINTER DECODER<br>D<br>ETC.<br>GND<br>MMQA/SZMMQA SERIES DEVICE<br>**----- End of picture text -----**<br> **Figure 9. Computer Interface Protection** **==> picture [484 x 230] intentionally omitted <==** **----- Start of picture text -----**<br> VDD<br>VGG<br>ADDRESS BUS<br>RAM ROM<br>DATA BUS<br>CPU<br>I/O<br>CLOCK<br>CONTROL BUS<br>GND<br>**----- End of picture text -----**<br> MMQA/SZMMQA SERIES DEVICE **Figure 10. Microprocessor Protection** **www.onsemi.com** **5** **MMQA, SZMMQA Quad Common Anode Series** ## **DEVICE MARKING AND ORDERING INFORMATION** |**Device***|**Device Marking**|**Package**|**Shipping**| |---|---|---|---| |MMQA5V6T1G|5A6|SC−74<br>(Pb−Free)|3,000/Tape & Reel| |MMQA6V2T1G|6A2||3,000/Tape & Reel| |MMQA6V2T3G|6A2||10,000/Tape & Reel| |MMQA6V8T1G|6A8||3,000/Tape & Reel| |MMQA12VT1G|12A||3,000/Tape & Reel| |MMQA13VT1G|13A||3,000/Tape & Reel| |MMQA15VT1G|15A||3,000/Tape & Reel| |MMQA18VT1G|18A||3,000/Tape & Reel| |MMQA20VT1G|20A||3,000/Tape & Reel| |MMQA20VT3G|20A||10,000/Tape & Reel| |MMQA22VT1G|22A||3,000/Tape & Reel| |MMQA24VT1G|24A||3,000/Tape & Reel| |MMQA27VT1G|27A||3,000/Tape & Reel| |MMQA27VT3G|27A||10,000/Tape & Reel| |MMQA33VT1G|33A||3,000/Tape & Reel| †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. *IncludeS SZ-prefix devices where applicable. ## **Mechanical Characteristics:** **CASE:** Void−free, Transfer−molded, Thermosetting Plastic Case. **FINISH:** Corrosion resistant finish, easily solderable. Package designed for optimal automated board assembly. Small package size for high density applications. Available in 8 mm Tape and Reel. Use the Device Number to order the 7 inch/3,000 unit reel. Replace the “T1” with “T3” in the Device Number to order the 13 inch/10,000 unit reel. **www.onsemi.com** **6** MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** **==> picture [486 x 44] intentionally omitted <==** **----- Start of picture text -----**<br> SC−74<br>6 CASE 318F<br>ISSUE P<br>1<br>DATE 07 OCT 2021<br>SCALE 2:1<br>**----- End of picture text -----**<br> **==> picture [87 x 67] intentionally omitted <==** ## **GENERIC MARKING DIAGRAM*** XXX M � � XXX = Specific Device Code M = Date Code � = Pb−Free Package (Note: Microdot may be in either location) *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ � ”, may or may not be present. Some products may not follow the Generic Marking. STYLE 1: STYLE 2: STYLE 3: PIN 1. CATHODE PIN 1. NO CONNECTION PIN 1. EMITTER 1 2. ANODE 2. COLLECTOR 2. BASE 1 3. CATHODE 3. EMITTER 3. COLLECTOR 2 4. CATHODE 4. NO CONNECTION 4. EMITTER 2 5. ANODE 5. COLLECTOR 5. BASE 2 6. CATHODE 6. BASE 6. COLLECTOR 1 STYLE 7: STYLE 8: STYLE 9: PIN 1. SOURCE 1 PIN 1. EMITTER 1 PIN 1. EMITTER 2 2. GATE 1 2. BASE 2 2. BASE 2 3. DRAIN 2 3. COLLECTOR 2 3. COLLECTOR 1 4. SOURCE 2 4. EMITTER 2 4. EMITTER 1 5. GATE 2 5. BASE 1 5. BASE 1 6. DRAIN 1 6. COLLECTOR 1 6. COLLECTOR 2 STYLE 4: STYLE 5: STYLE 6: PIN 1. COLLECTOR 2 PIN 1. CHANNEL 1 PIN 1. CATHODE 2. EMITTER 1/EMITTER 2 2. ANODE 2. ANODE 3. COLLECTOR 1 3. CHANNEL 2 3. CATHODE 4. EMITTER 3 4. CHANNEL 3 4. CATHODE 5. BASE 1/BASE 2/COLLECTOR 3 5. CATHODE 5. CATHODE 6. BASE 3 6. CHANNEL 4 6. CATHODE STYLE 10: STYLE 11: PIN 1. ANODE/CATHODE PIN 1. EMITTER 2. BASE 2. BASE 3. EMITTER 3. ANODE/CATHODE 4. COLLECTOR 4. ANODE 5. ANODE 5. CATHODE 6. CATHODE 6. COLLECTOR ## **DOCUMENT NUMBER: 98ASB42973B** **DESCRIPTION: SC−74** Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. **PAGE 1 OF 1** **onsemi** and are trademarks of Semiconductor Components Industries, LLC dba **onsemi** or its subsidiaries in the United States and/or other countries. **onsemi** reserves the right to make changes without further notice to any products herein. **onsemi** makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. **onsemi** does not convey any license under its patent rights nor the rights of others. www.onsemi.com © Semiconductor Components Industries, LLC, 2019 **onsemi** , , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “ **onsemi** ” or its affiliates and/or subsidiaries in the United States and/or other countries. **onsemi** owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. 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Buyer is responsible for its products and applications using **onsemi** products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by **onsemi** . “Typical” parameters which may be provided in **onsemi** data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. **onsemi** does not convey any license under any of its intellectual property rights nor the rights of others. **onsemi** products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use **onsemi** products for any such unintended or unauthorized application, Buyer shall indemnify and hold **onsemi** and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that **onsemi** was negligent regarding the design or manufacture of the part. **onsemi** is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. ## **PUBLICATION ORDERING INFORMATION** **LITERATURE FULFILLMENT** : **TECHNICAL SUPPORT Email Requests to:** orderlit@onsemi.com **North American Technical Support: Europe, Middle East and Africa Technical Support:** Voice Mail: 1 800−282−9855 Toll Free USA/Canada Phone: 00421 33 790 2910 **onsemi Website:** www.onsemi.com Phone: 011 421 33 790 2910 For additional information, please contact your local Sales Representative ◊ **==> picture [232 x 43] intentionally omitted <==**
Updated at April 28, 2026
onsemi is a premier global supplier of intelligent power and sensing technologies, driving disruptive innovations across the automotive, industrial, and cloud infrastructure markets. Recognized for their commitment to sustainability and reliable supply chains, the company accelerates advancements in vehicle electrification, industrial automation, and 5G networks by solving the industry's most complex design challenges. At the core of their portfolio is an industry-leading selection of discrete semiconductors. This extensive range features thousands of high-performance bipolar transistors, single and dual MOSFETs, and a comprehensive array of diodes, including Zener, Schottky, and fast-recovery rectifiers. Engineered for superior thermal performance and energy efficiency, these foundational components are critical for demanding power conversion, switching, and signal conditioning applications. Beyond essential discretes, onsemi provides a robust suite of advanced power management and circuit protection solutions. Their lineup includes intelligent power modules, single IGBTs, and transient voltage suppression (TVS) diodes designed to safeguard sensitive circuitry. Complimented by integrated passive filters, AC/DC LED driver ICs, and specialized sub-2.4GHz RF transceivers, onsemi equips engineers with the scalable, high-quality technologies needed to build a cleaner, smarter, and more connected world.
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