MMO90-16IO6

Thyristor Module, Antiparallel, 41 A, 1600 V

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Manufacturer: IXYS SEMICONDUCTOR
Product type: Thyristors - SCR Modules
SCR Module Type:Antiparallel SCR; Peak Repetitive Off-State Voltage, Vdrm:1.6kV; Gate Trigger Current Max, Igt:100mA; Current It av:41A; On State RMS Current IT(rms):90A; Peak Non Rep Surge
MSL: -
No. of Pins: 4Pins
Product Range: -
SCR Module Type: Antiparallel SCR
Thyristor Mounting: Panel
Holding Current Max: 100mA
On State RMS Current: 90A
Thyristor Case Style: SOT-227B
Average Forward Current: 41A
Average On State Current: 41A
Gate Trigger Current Max: 100mA
Gate Trigger Voltage Max: 1.5V
Operating Temperature Max: 150°C
Repetitive Peak Reverse Voltage: 1.6kV
Peak Non Repetitive Surge Current: 700A
Peak Repetitive Off State Voltage: 1.6kV

Delivery and price
Units per pack	10
Price	18.29 €
Current stock	10+
Lead time	30 days

Datasheet

**MMO 90** 

## **AC Controller Modules** 

## **I = 90 A** RMS **V = 1200-1600 V** RRM 

**VRSM VRRM Type VDSM VDRM** ~~TTT~~ **1200V 1200V MMO 90-12io6** ~~EE~~ **1600 1600 MMO 90-16io6** 

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G1  K1/A2 miniBLOC, SOT-227 B<br>G1<br>|<br>K2/A1  G2<br>**----- End of picture text -----**<br>


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K2/A1<br>G1<br>SS<br>\S G2<br>K1/A2<br>**----- End of picture text -----**<br>


## **Symbol Test Conditions** 

## **Maximum Ratings** 

|**IRMS**<br>**ITRMS**<br>**ITAVM**|TC= 110 C, 50 - 400 Hz, module<br>TVJ= TVJM<br>TC= 110 C; (180 sine)|TC= 110 C, 50 - 400 Hz, module<br>TVJ= TVJM<br>TC= 110 C; (180 sine)|90<br>65<br>41|A<br>A<br>A|
|---|---|---|---|---|
|**ITSM**|TVJ= 45 C;<br>VR= 0<br>TVJ= TVJM<br>VR= 0|t = 10 ms (50 Hz), sine<br>t = 8.3 ms (60 Hz), sine<br>t = 10 ms (50 Hz), sine<br>t = 8.3 ms (60 Hz), sine|800<br>860<br>700<br>750|A<br>A<br>A<br>A|
|**I2t**|TVJ= 45 C<br>VR= 0|t = 10 ms (50 Hz), sine<br>t = 8.3 ms (60 Hz), sine|3200<br>3110|A2s<br>A2s|
||TVJ= TVJM|t = 10 ms (50 Hz), sine|2450|A2s|
|**(di/dt)cr**|VR= 0<br>TVJ= TVJM<br>f  =50 Hz, tP=200 µs<br>VD=2/3VDRM|t = 8.3 ms (60 Hz), sine<br>repetitive, IT= 150 A|2360<br>100|A2s<br>A/µs|
||IG= 0.3 A|non repetitive, IT= ITAVM|500|A/µs|
||diG/dt = 0.3 A/µs||||
|**(dv/dt)cr**|TVJ= TVJM;<br>VDR=2/3VDRM<br>RGK= ; method 1 (linear voltage rise)<br>[e)||1000|V/µs|
|**PGM**|TVJ= TVJM|tp=<br>30 µs|10|W|
||IT= ITAVM|tp= 300 µs|5|W|
|**PGAVM**|||0.5|W|
|**VRGM**|||10|V|
|**TVJ**|||-40...+150|C|
|**TVJM**|||150|C|
|**Tstg**<br>-40...+150<br>C<br>**VISOL**<br>50/60 Hz, RMS;<br>IISOL1 mA<br>2500<br>V~<br>~~as~~|||||
|**Md**|Mounting torque  (M4)<br>1.1 - 1.5 / 9 - 13|||Nm/lb.in.|
||Terminal connection torque (M4)|Terminal connection torque (M4)<br>1.1 - 1.5 / 9 - 13||Nm/lb.in.|
|**Weight**|typ.||30|g|



## **Features** 

- G Thyristor controller for AC (circuit W1C acc. to IEC) for mains frequency 

- G International standard package miniBLOC (ISOTOP compatible) 

- G Isolation voltage 2500 V~ 

- G Planar passivated chips 

- G UL registered, E 72873 

## **Applications** 

- G Switching and control of single and three phase AC 

- G Softstart AC motor controller 

- G Solid state switches 

- G Light and temperature control 

## **Advantages** 

- G Easy to mount with two screws 

- G Space and weight savings 

- G Improved temperature and power cycling 

- G High power density 

Data according to IEC 60747 and to a single thyristor/diode unless otherwise stated. IXYS reserves the right to change limits, test conditions and dimensions. 

© 2000 IXYS All rights reserved 

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**MMO 90** 

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|||||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|Symbol|Test Conditions|Characteristic Values|10|
|OTCSe|IVDT|TITVJ|= T= 80; TVJM; VVJ = 25R = VRRM|°|C|; VD = VDRM|CCT|TCT|<|TT|1.4320|mAV|VG|V|0|2: I3: I1: IGTGTGT, T, T, TVJ VJ VJ = 125°C=   25°C=  -40°C||aETE| TT|
|VT0|For power-loss calculations only|0.9|V|
|rT|5.8|m|
|VGT|VD = 6 V;|TTVJVJ = 25 = -40CC|1.51.6|VV|O|1|“TTUML|TICATCNNEArT|2|3|NN|5|6|
|IGT|VD = 6 V;|TVJ = 25|C|100|mA|1|4|
|a|TVJ = -40|°|C|<|200|mA|aPTET|aeCATT||
|VGD|TVJ = TVJM;|VD =|[2]|/3 VDRM|0.2|V|
|IGD|c|<|5|mA|ABEPez0 calliNE|4: PGAV = 0.5 W|||
|IL|TIGVJ = 0.3 A; di = 25|oe|C; tPG = 10 s/dt = 0.3 A/µs|250|mA|0.1|||||IGD, TVJ = 125°C|6: P5: PGM  GM  =    5 W=  10 W|
|1|10|100|1000|mA|
|IH|TVJ = 25|C; VD = 6 V; RGK =|100|mA|IG|
|tgd|TVJ = 25|°|C; VD = ½ VDRM|<|2|µs|Fig. 1|Gate trigger characteristics|
|IG = 0.3 A; diG/dt = 0.3 A/µs|
|tq|TVJ = TVJM; IT = 20 A, tP = 200 µs; di/dt = -10 A/µs|typ.|150|µs|1000|
|VR = 100 V; dv/dt = 15 V/µs; VD =|[2]|/3 VDRM|TVJ = 25°C|
|RthJC|per thyristor; DC current|0.6|K/W|||µs|Ea|
|per module|0.3|K/W|tgd|ee|
|RthCH|per thyristor; DC current|0.1|K/W|typ.|Limit|
|per module|0.05|K/W|100|
|dS|Creeping distance on surface|8|mm|
|dA|Creepage distance in air|4|mm|
|a|Max. allowable acceleration|50|m/s|[2]|Pt|TNA|
|Sn|10|ee|ee|
|eeenite|eee|
|{TANT|
|1|PL|ETTSWEET|
|10|100|mA|1000|
|IG|

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Fig. 2 Gate trigger delay time 

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  miniBLOC, SOT-227 B<br>**----- End of picture text -----**<br>


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Dim. Millimeter Inches<br>Min. Max. Min. Max.<br>A 31.50 31.88 1.240 1.255<br>B 7.80 8.20 0.307 0.323<br>C 4.09 4.29 0.161 0.169<br>D 4.09 4.29 0.161 0.169<br>E 4.09 4.29 0.161 0.169<br>F 14.91 15.11 0.587 0.595<br>al t T GH 30.1237.80 30.3038.20 1.1861.489 1.1931.505<br>J 11.68 12.22 0.460 0.481<br>K 8.92 9.60 0.351 0.378<br>L 0.76 0.84 0.030 0.033<br>M 12.60 12.85 0.496 0.506<br>N 25.15 25.42 0.990 1.001<br>to ye O 1.98 2.13 0.078 0.084<br>P 4.95 5.97 0.195 0.235<br>Q 26.54 26.90 1.045 1.059<br>ree i! f R 3.94 4.42 0.155 0.174<br>S 4.72 4.85 0.186 0.191<br>T 24.59 25.07 0.968 0.987<br>U -0.05 0.1 -0.002 0.004<br>V 3.30 4.57 0.130 0.180<br>M4 screws (4x) supplied W 0.780 0.830 19.81 21.08<br>**----- End of picture text -----**<br>


© 2000 IXYS All rights reserved 

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## **MMO 90** 

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140 200 600<br>A 175A TTVJ C  = 85°C= 150°C A 50 Hz80 % VRRM<br>120<br>IT IRMS 500<br>150 ITSM<br>TS 100 od +<br>400<br>125<br>80 Se NCIC st TVJ =45°C<br>100 300<br>60 Sco CSS T T<br>TVJ =125°C TVJ = 25°C 75 200<br>40 Spa TAIT TITTLE FAT TH<br>50 TVJ =150°C<br>100<br>20 coo 25 cic<br>0 A ee 0 0<br>0.0 0.5 1.0 1.5 V 2.0 0.01 0.1 1 s 10 0.001 0.01 0.1 s 1<br>VT t t<br>Fig. 3 Forward current versus voltage Fig. 4 Rated RMS current versus time Fig. 5 Surge overload current<br>drop per leg (360° conduction)<br>120 10000<br>VR = 0V<br>W<br>100<br>Ptot RthKA K/W A [2] s<br>0.5<br>80 1 I [2] t TVJ =45°C<br>| | ANIA 1.5 c e e<br>60 23 1000 TVJ =150°C<br>5<br>10<br>40<br>20<br>CV PSRANO FESS<br>0 4)OE FES 100 TTT<br>0 20 40 60 A 0 25 50 75 100 125 °C 150 1 ms 10<br>IRMS TA t<br>Fig. 6 Load current capability for single AC controller; 1 x MMO 90 Fig. 7 I²t versus time (per thyristor)<br>0.7 100<br>K/W Constants for A<br>0.6 ZthJC calculation: LOMLOMCo +  Ge<br>Rthi / (K/W)  ti / (s) ITAVM 80<br>0.5 0.039 0.0006 DC<br>ZthJC 0.15 0.017 180° sin<br>| 0.225 0.104 Loom aol | 60 canna 120°<br>0.4  60°<br>0.156 0.45<br> 30°<br>0.3 CCCI)Oe Cl = 40 aeFRRRK<br>0.2<br>ci 20<br>0.1<br>CCUM<br>0.0 Seri rrCo COTM TEMLe = 0 a8LLL A MMO90<br>0.001 0.01 0.1 1 s 10 0 25 50 75 100 125 150°C<br>t TC<br>Fig. 8 Transient thermal impedance junction to case (per thyristor) Fig. 9 Maximum forward current at<br>case temperature<br>**----- End of picture text -----**<br>


© 2000 IXYS All rights reserved 

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Updated at June 7, 2026

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