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MMO90-14IO6
THYRISTOR DIODE MODULE, 50A, 1.4KV
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: LITTELFUSE
- Product type: Thyristors - SCR Modules
- SCR; THYRISTOR DIODE MODULE, 50A, 1.4KV; SCR Module Type:Series Connected - SCRs; Peak Repetitive Off State Voltage:1.4kV; Gate Trigger Current Max:100mA; Average Forward Current:50A;
- No. of Pins: 4Pins
- Product Range: -
- SCR Module Type: Series Connected - SCRs
- Thyristor Mounting: Panel
- On State RMS Current: 110A
- Thyristor Case Style: SOT-227B
- Average Forward Current: 50A
- Gate Trigger Current Max: 100mA
- Gate Trigger Voltage Max: 1.5V
- Operating Temperature Max: 150°C
- Repetitive Peak Reverse Voltage: 1.4kV
- Peak Repetitive Off State Voltage: 1.4kV
| Delivery and price | |
|---|---|
| Units per pack | 100 |
| Price | 19.97 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
**MMO90-14io6** ## **Thyristor** **VRRM** _**=**_ **1400 V** **I** **I TAV** _**=**_ **50 A VT** _**=**_ **1,2 V** ## AC Controlling 1~ full-controlled ## **Part number** ## **MMO90-14io6** **==> picture [66 x 7] intentionally omitted <==** **----- Start of picture text -----**<br> Backside: isolated<br>**----- End of picture text -----**<br> **==> picture [120 x 128] intentionally omitted <==** **----- Start of picture text -----**<br> y 2<br>1 3<br>4<br>**----- End of picture text -----**<br> ## **Features / Advantages:** - Thyristor for line frequency - Planar passivated chip - Long-term stability ## **Applications:** - Line rectifying 50/60 Hz - Softstart AC motor control - DC Motor control - Power converter - AC power control - Lighting and temperature control ## **Package:** SOT-227B (minibloc) - Isolation Voltage: V~3000 - Industry standard outline - RoHS compliant - Epoxy meets UL 94V-0 - Base plate: Copper internally DCB isolated - Advanced power cycling ## **Terms Conditions of usage:** The data contained in this product data sheet is exclusively intended for technically trained staff. The user will have to evaluate the suitability of the product for the intended application and the completeness of the product data with respect to his application. The specifications of our components may not be considered as an assurance of component characteristics. The information in the valid application- and assembly notes must be considered. Should you require product information in excess of the data given in this product data sheet or which concerns the specific application of your product, please contact the sales office, which is responsible for you. Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact the sales office, which is responsible for you. Should you intend to use the product in aviation, in health or live endangering or life support applications, please notify. For any such application we urgently recommend - to perform joint risk and quality assessments; - the conclusion of quality agreements; - to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures. IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20150827b © 2015 IXYS all rights reserved **MMO90-14io6** |**Thyristor**|**Thyristor**|**Ratings**|**Ratings**|**Ratings**|**Ratings**|**Ratings**| |---|---|---|---|---|---|---| |**Symbol**<br>**Definition**<br>**Conditions**|||**min.**|**typ.**|**max.**|**Unit**| |**V**<br>**RSM/DSM**<br>_max. non-repetitive reverse/forward blocking voltage_||T = 25°C<br>VJ|||1500|V| |**V**<br>**RRM/DRM**<br>_max. repetitive reverse/forward blocking voltage_||T = 25°C<br>VJ|||1400|V| |**I**<br>**R/D**<br>_reverse current, drain current_|V = V<br>V = V<br>1400<br>1400<br>R/D<br>R/D|T = 25°C<br>VJ<br>T = °C<br>VJ<br>125|||100<br>10|mA<br>µA| |**VT**<br>_forward voltage drop_|I = A<br>T<br>50<br>I = A<br>100<br>T|T = 25°C<br>VJ|||1,27<br>1,53|V<br>V| ||I = A<br>T<br>50<br>I = A<br>100<br>T|T = °C<br>VJ<br>150|||1,20<br>1,50|V<br>V| |**I**<br>**I**<br>_RMS forward current per phase_<br>**RMS**<br>**TAV**<br>_average forward current_|T = °C<br>C<br>95<br>180° sine|T = °C<br>VJ<br>150|||50<br>110|A<br>A| |**VT0**<br>**rT**<br>_threshold voltage_<br>_slope resistance_<br>_for power loss calculation only_||T = °C<br>VJ<br>150|||0,88<br>6|V<br>mΩ| |**R**<br>**thJC**<br>_thermal resistance junction to case_|||||0,6|K/W| |**RthCH**<br>_thermal resistance case to heatsink_||||0,10||K/W| |**Ptot**<br>_total power dissipation_||T = 25°C<br>C|||210|W| |**ITSM**<br>_max. forward surge current_|t = 10 ms; (50 Hz), sine<br>t = 8,3 ms; (60 Hz), sine|T = 45°C<br>VJ<br>V = 0 V<br>R|||800<br>865|A<br>A| ||t = 10 ms; (50 Hz), sine|T = °C<br>VJ<br>150|||680<br>735|A<br>A| ||<br>t = 8,3 ms; (60 Hz), sine|V = 0 V<br>R||||| |**I²t**<br>_value for fusing_|t = 10 ms; (50 Hz), sine<br>t = 8,3 ms; (60 Hz), sine|T = 45°C<br>V = 0 V<br>VJ<br>R|||3,20<br>3,12|kA²s<br>kA²s| ||t = 10 ms; (50 Hz), sine<br>t = 8,3 ms; (60 Hz), sine|T = °C<br>150<br>V = 0 V<br>VJ<br>R|||2,31<br>2,25|kA²s<br>kA²s| |**CJ**<br>_junction capacitance_|V = V<br>400<br>f = 1 MHz<br>R|T = 25°C<br>VJ||32||pF| |**PGM**<br>_max. gate power dissipation_<br>**PGAV**<br>_average gate power dissipation_|t = 30 µs<br>P<br>t =<br>P<br>300 µs|T = °C<br>C<br>150|||10<br>5<br>0,5|W<br>W<br>W| |**(di/dt)cr**<br>_critical rate of rise of current_|repetitive, I =<br>TVJ = 150°C; f = 50 Hz<br>t = µs;<br>I<br>A; V =⅔V<br>150 A<br>T<br>P<br>G =<br>0,3<br>di /dt<br>A/µs;<br>G<br>= 0,3<br>DRM<br>non-repet., I =<br>50 A<br>T<br>200|repetitive, I =<br>150 A<br>T|||100|A/µs| ||||||500|A/µs| |**(dv/dt)**<br>_critical rate of rise of voltage_<br>**cr**|T<br>= 150°C<br>R =∞; method 1 (linear voltage rise)<br>VJ<br>V =⅔VDRM<br>GK||||1000|V/µs| |**VGT**<br>_gate trigger voltage_<br>**IGT**<br>_gate trigger current_|V = 6 V<br>T<br>=<br>°C<br>25<br>D<br>VJ<br>T<br>=<br>°C<br>-40<br>VJ<br>V = 6 V<br>T<br>=<br>°C<br>25<br>D<br>VJ<br>T<br>=<br>°C<br>-40<br>VJ||||1,5<br>100<br>1,6<br>200|V<br>mA<br>V<br>mA| |**VGD**<br>_gate non-trigger voltage_<br>**IGD**<br>_gate non-trigger current_|T<br>=<br>°C<br>VJ<br>V =⅔V<br>D<br>DRM<br>150||||0,2<br>5|V<br>mA| |_latching current_<br>**IL**|T<br>=<br>°C<br>VJ<br>25<br>t<br>µs<br>p =<br>10<br>I<br>A;<br>=<br>03<br>di /dt<br>A/s<br><br>=<br>03||||250|mA| ||G <br>,<br> <br>µ<br>G<br><br>,|||||| |_holding current_<br>**IH**|T<br>=<br>°C<br>VJ<br>25<br>V = 6 V<br>D<br>R =∞<br>GK||||100|mA| |_gate controlled delay time_<br>**tgd**|T<br>=<br>°C<br>VJ<br>25<br>I<br>A;<br>G =<br>0,3<br>di /dt<br>A/µs<br>G<br>=<br>0,3<br>V = ½ V<br>D<br>DRM||||2|µs| |_turn-off time_<br>**tq**|T<br>=<br>°C<br>VJ<br>di/dt =<br>A/µs<br>10<br>dv/dt =<br>V/µs<br>15<br>V =<br>R<br>100 V; I<br>A;<br>T = 50<br>V =⅔VDRM<br>t<br>µs<br>p = 200<br>125|||150||µs| |||||||| IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20150827b © 2015 IXYS all rights reserved **MMO90-14io6** |**Ratings**<br>**Package**<br>**SOT-227B (minibloc)**|**Ratings**<br>**Package**<br>**SOT-227B (minibloc)**|**Ratings**<br>**Package**<br>**SOT-227B (minibloc)**|**Ratings**<br>**Package**<br>**SOT-227B (minibloc)**|**Ratings**<br>**Package**<br>**SOT-227B (minibloc)**|**Ratings**<br>**Package**<br>**SOT-227B (minibloc)**| |---|---|---|---|---|---| |**Symbol**<br>**Definition**<br>**Conditions**||**min.**|**typ.**|**max.**|**Unit**| |**I RMS**<br>_RMS current_<br>per terminal||||150|A| |**TVJ**<br>_virtual junction temperature_||-40||150|°C| |**Top**<br>_operation temperature_||-40||125|°C| |**Tstg**<br>_storage temperature_||-40||150|°C| |**Weight**|||30||g| |**M D**<br>_mounting torque_<br>**M T**<br>_terminal torque_||1,1||1,5|Nm<br>Nm| |||1,1||1,5|| |**dSpp/App**<br>_creepage distance on surface | striking distance through air_<br>**dSpb/Apb**<br>_terminal to backside_<br>_terminal to terminal_|10,5<br>8,6|3,2<br>6,8|||mm<br>mm| |**V**<br>t = 1 second<br>t = 1 minute<br>_isolation voltage_<br>50/60 Hz, RMS; I≤1 mA<br>ISOL<br>**ISOL**||3000||V<br>V|| |||2500|||| **==> picture [191 x 142] intentionally omitted <==** **----- Start of picture text -----**<br> Product Marking<br>Part No.<br>Logo XXXXX ®<br>Zyyww abcd<br>Assembly Line<br>DateCode Assembly Code<br>**----- End of picture text -----**<br> **==> picture [215 x 78] intentionally omitted <==** |**Ordering**|**Ordering Number**<br>|**Marking on Product**|**Delivery Mode**|**Quantity**|**Code No.**| |---|---|---|---|---|---| |Standard|MMO90-14io6<br>|MMO90-14io6|Tube|10|485144| |**Equivalent Circuits for Simulation**<br>T =<br>VJ<br>150 °C<br>_* on die level_|**Equivalent Circuits for Simulation**<br>T =<br>VJ<br>150 °C<br>_* on die level_| |---|---| |I|V0<br>~~R~~0| IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20150827b © 2015 IXYS all rights reserved **MMO90-14io6** ## **Outlines SOT-227B (minibloc)** **==> picture [134 x 144] intentionally omitted <==** **----- Start of picture text -----**<br> 2<br>1 3<br>4<br>**----- End of picture text -----**<br> IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20150827b © 2015 IXYS all rights reserved **MMO90-14io6** ## **Thyristor** **==> picture [508 x 660] intentionally omitted <==** **----- Start of picture text -----**<br> 120 700 3500<br>50 Hz, 80% VRRM VR = 0 V<br>100 3000<br>600<br>80 2500<br>IT ITSM TVJ = 45°C I [2] t<br>60 500 2000<br>[A] [A] [A [2] s] TVJ = 45°C<br>40 1500<br>400<br>20 125°C150°C TVJ = 125°C 1000 TVJ = 125°C<br>TVJ = 25°C<br>0 300 500<br>0,4 0,8 1,2 1,6 2,0 0,01 0,1 1 1 2 3 4 5 6 7 8 910<br>VT [V] t [s] t [ms]<br>Fig. 1 Forward characteristics Fig. 2 Surge overload current Fig. 3 I [2] t versus time (1-10 ms)<br>10 1000<br>1: I GT , T VJ = 125°C TVJ = 25°C dc =<br>2: IGT, TVJ = 25 ° C 100 1<br>3: I GT , T VJ = -40°C 0.5<br>0.4<br>80 0.33<br>typ. Limit<br>100 I 0.17<br>VG 3 t T(AV)M 60 0.08<br>[V] 1 1 2 5 6 gd [A]<br>4 [µs]<br>40<br>10<br>20<br>4: P GAV = 0.5 W<br>5: PGM = 5 W<br>IGD, TVJ = 125°C 6: PGM = 10 W 0<br>0,1 1<br>0 25 50 75 100 125 150<br>1 10 100 1000 10000 10 100 1000<br>IG [mA] IG [mA] TC [°C]<br>Fig. 4 Gate trigger characteristics Fig. 5 Gate controlled delay time Fig. 6 Max. forward current<br>at case temperature<br>0,8<br>dc =<br>80 1 RthHA<br>0.5 0.4<br>0.4 0.6 0,6<br>0.33 0.8<br>60 0.17 1.0<br>0.08 2.0 ZthJC<br>P(AV) 4.0 0,4<br>40<br>[W] [K/W] Rthi [K/W] ti [s]<br>0,2 0.039 0.0006<br>20<br>0.150 0.017<br>0.245 0.104<br>0.166 0.450<br>0 0,0<br>0 20 40 60 0 50 100 150 10 [0] 10 [1] 10 [2] 10 [3] 10 [4]<br>IT(AV) [A] Tamb [°C] t [ms]<br>Fig. 7a Power dissipation versus direct output current Fig. 8 Transient thermal impedance junction to case<br>Fig. 7b and ambient temperature<br>**----- End of picture text -----**<br> IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20150827b © 2015 IXYS all rights reserved
Updated at June 9, 2026
Founded in 1927 and headquartered in Chicago, Illinois, Littelfuse is a premier global manufacturer of circuit protection, power control, and sensing technologies. Widely recognized for pioneering the first small, fast-acting protective fuse, the company has grown into an industry leader whose highly reliable components are essential to modern industrial, transportation, and consumer electronics applications worldwide. At the core of the Littelfuse portfolio is an expansive and industry-leading range of circuit protection solutions. This encompasses a massive selection of traditional fuses, fuse holders, and resettable PTC thermistor fuses designed to safely interrupt overcurrent conditions. To defend against electrical overstress, Littelfuse also provides advanced transient voltage suppression (TVS) technologies, including thousands of specialized TVS diodes, TVS varistors, and gas discharge tubes (GDTs) that ensure robust defense against voltage spikes and environmental hazards. Beyond its foundational protection components, Littelfuse manufactures a diverse array of discrete semiconductors, sensors, and switching devices. Engineers rely on their high-performance thyristors, including TRIACs and SCRs, alongside power-efficient Schottky diodes and MOSFETs for demanding power control applications. Complemented by precision proximity sensors and highly reliable reed and solid-state relays, Littelfuse delivers the critical building blocks required for secure, efficient, and complete system design.
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